WO1997014178B1 - Method and apparatus for chemical processing semiconductor wafers - Google Patents
Method and apparatus for chemical processing semiconductor wafersInfo
- Publication number
- WO1997014178B1 WO1997014178B1 PCT/US1996/016150 US9616150W WO9714178B1 WO 1997014178 B1 WO1997014178 B1 WO 1997014178B1 US 9616150 W US9616150 W US 9616150W WO 9714178 B1 WO9714178 B1 WO 9714178B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wafer
- working surface
- chamber
- lower working
- semiconductor wafer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract 27
- 239000000126 substance Substances 0.000 title claims abstract 15
- 235000012431 wafers Nutrition 0.000 title 1
- 239000012530 fluid Substances 0.000 claims abstract 40
- 238000004140 cleaning Methods 0.000 claims abstract 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract 3
- 238000005530 etching Methods 0.000 claims 7
- 238000010438 heat treatment Methods 0.000 claims 6
- 238000000034 method Methods 0.000 claims 5
- 239000007789 gas Substances 0.000 claims 4
- 238000009987 spinning Methods 0.000 claims 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N HF Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 3
- 239000010408 film Substances 0.000 claims 3
- 238000005070 sampling Methods 0.000 claims 3
- FFUAGWLWBBFQJT-UHFFFAOYSA-N Bis(trimethylsilyl)amine Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims 2
- 229960002050 Hydrofluoric Acid Drugs 0.000 claims 2
- 239000002318 adhesion promoter Substances 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 238000004458 analytical method Methods 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 239000000356 contaminant Substances 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 238000003780 insertion Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 150000002739 metals Chemical group 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 238000000206 photolithography Methods 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 238000000427 thin-film deposition Methods 0.000 claims 1
- 230000002708 enhancing Effects 0.000 abstract 1
- 238000011010 flushing procedure Methods 0.000 abstract 1
- 238000005086 pumping Methods 0.000 abstract 1
Abstract
A method and apparatus for processing semiconductor wafer blanks comprises an enclosed chamber with upper and lower plates with a plurality of fluid openings leading from a source of chemical cleaning fluids, flushing fluid and dry nitrogen gas. The top plate also acts as a vacuum chuck to hold the wafer after the top surface has been cleaned and may rotate or oscillate to enhance the cleaning of the lower wafer surface. The method includes a chemical cleaning of the wafer top followed by processing the lower surface by pumping appropriate chemicals through the lower plate center toward the wafer periphery while the wafer is extremely close to the surface so that the outward moving fluids cover the wafer surface and are sparingly used. As the chemicals flow toward the periphery, their strength is renewed by the addition of new chemicals pumped through additional holes.
Claims
1. An apparatus for chemically processing a semiconductor wafer comprising
(a) at least one chamber, in which a semiconductor wafer is processed, the chamber comprising.
(b) a bottom having portions defining a lower working surface inside the chamber, the lower working surface having at least one entry opening passing through the lower working surface to a conduit, the entry opening in fluid flow communication with and directing processing fluid into the chamber,
(c) a top having portions defining an upper working surface inside the chamber spaced above the lower working surface, the upper working surface having at least one entry opening passing through the upper working surface to the conduit, the entry opening in fluid flow communication with and directing processing fluid into the chamber;
(d) means for supporting a semiconductor wafer between the upper and lower working surfaces to position the semiconductor wafer such that at least one narrow gap having a spacing designed to create either a laminar, a transition or a turbulent flow is created either
(i) between the surface of the semiconductor wafer and the upper working surface,
(ii) between the surface of the semiconductor wafer and the lower working surface, or
(iii) between the surface of the semiconductor wafer and both the upper and the lower working surface,
the particular type of flow being chosen to create flow characteristics in the processing fluid which will optimize the chemical processing of the semiconductor wafer;
(e) a side wall surrounding the semiconductor wafer; and
(f) a drainage system for directing the processing fluid out of the chamber
2. The processing apparatus of Claim 1, wherein the drainage system is in the lower working surface.
3. The processing apparatus of Claim 2, wherein the drainage system comprises at least one groove in the lower working surface, wherein the groove is coupled to a drain outlet.
4. The processing apparatus of Claim 1, wherein the upper working surface is coupled to a selector for selecting between a fluid passing into the chamber
5. The processing apparatus of Claim 1, wherein one of the working surfaces is rotatable and movable toward or away from the other working surface, the apparatus further comprising a system for rotating and moving the rotatable and movable working surface.
6. The processing apparatus of Claim 14, wherein the system for rotating and moving the working surface comprises an electrical motor attached to the chamber.
7. The processing apparatus of Claim 1 , wherein the at least one narrow gap comprises a gap of 0.01 to 10.0 mm, inclusive.
8. The processing apparatus of Claim 7, wherein the at least one groove comprises a plurality of grooves disposed concentricity around the central entry opening,
9. The processing apparatus of Claim 1 , further comprising a valve associated with each opening of the at least one entry openings in the lower working surface for controlling fluid flow through the entry openings into the chamber.
10. The processing apparatus of Claim 1, further comprising a valve in the drainage system to control fluid flow out of the chamber.
11. The processing apparatus of Claim 1, wherein the means for supporting a semiconductor wafer comprises at least three circumferentially spaced fingers projecting from the side wall and overlying the lower working surface.
12. The processing apparatus of Claim 1 1, wherein the fingers are beveled in the radial direction relative to the center of the chamber.
13. The processing apparatus of Claim 1, wherein the upper working surface and the lower working surface are substantially flat and are generally of the same size.
14. The processing apparatus of Claim 1, wherein one of the working surfaces is rotatable and movable toward or away from the other working surface, the apparatus further comprising a system for rotating and moving the rotatable and movable working surface.
15. The processing apparatus of Claim 14, wherein the system for rotating and moving the working surface comprises an electrical motor attached to the chamber
16. The processing apparatus of Claim 1, wherein the at least one narrow gap comprises a gap of 0.01 to 10.0 mm, inclusive.
17. A method for chemically processing a semiconductor wafer comprising the steps of.
(a) inserting the wafer between an upper working surface and a lower working surface of an enclosed chamber;
(b) supporting the wafer substantially parallel to the upper and lower working surfaces such that at least one narrow gap is created between at least one surface of the wafer and at least one of the working surfaces; and
(c) processing at least one surface of the wafer by
(c1) injecting selected processing fluids into the enclosed chamber through at least one entry opening in either the upper working surface, the lower working surface, or both the upper and the lower working surfaces;
(c2) forcing the elected processing fluids through the at least one narrow gap and over the at least one surface of the wafer, and
(c3) draining selected processing fluids from the enclosed chamber through at least one drain in the chamber; wherein
(d) the at least one gap has a spacing designed to create either a laminar, a transition or a turbulent flow, the particular type of flow being chosen to produce optimized flow characteristics for chemically processing the semiconductor wafer using the selected processing fluids.
18. The method of Claim 17, wherein the selected processing fluids are injected into the enclosed chamber through at least one entry opening below the wafer.
19. The method of Claim 18, wherein the step of supporting the wafer comprises supporting the wafer at a predetermined height above the lower working surface by adjusting a volume flow rate of the selected processing fluids to be injected into the enclosed chamber through the at least one entry opening below the wafer in the step (c1) to thereby float the wafer to the predetermined height above the lower working surface.
20. The method of Claim 17, wherein the selected processing fluids are injected into the enclosed chamber through at least one entry opening above the wafer, and at least one entry opening below the wafer.
21. The method of Claim 20, wherein the step of supporting the wafer comprises supporting the wafer at a predetermined height above the lower working surface by adjusting a volume flow rate of the selected processing fluids to be injected into the enclosed chamber through the at least one entry opening below the wafer in the step (c1) to thereby float the wafer to the predetermined height above the lower working surface.
22. The method of Claim 17, wherein the step of supporting the wafer comprises supporting the wafer at a predetermined height above the lower working surface by adjusting the positions of the three beveled fingers spaced around the lower working surface to a predetermined height, relative to the lower working surface, prior to insertion of the wafer into the enclosed chamber; and wherein the step of inserting the wafer into the enclosed chamber comprises the step of inserting the wafer into the enclosed chamber such that the three beveled fingers contact and support the edge portion of the wafer.
23. The method of Claim 17, wherein step (c1) of injecting selected processing fluids into the enclosed chamber comprises the step of injecting the selected processing fluids into the enclosed chamber through at least one entry opening above the wafer
24. The method of Claim 17, wherein the step (c2) of forcing the selected processing fluids through the at least one narrow gap comprises the step of forcing the selected processing fluids through a gap of 0.01 to 10.0 mm, inclusive.
25. The method of Claim 17, where the chemical processing comprises a process of etching the semiconductor wafer, wherein the step (c) is performed wherein the selected processing fluids are for cleaning both sides of the wafer, the method further comprising the steps of:
(d) preparing the semiconductor wafer for etching;
(e) attaching the semiconductor wafer to the upper working surface; and
(f) etching the semiconductor wafer by repeating step (c) using etching chemicals as the selected processing fluids.
26. The method of Claim 25, wherein the preparing step (d) comprises the step of injecting nitrogen into the chamber to displace the selected processing fluids used for cleaning the wafer.
27 The method of Claim 25, wherein the attaching step comprises the step of applying a vacuum through at least one entry opening located in the upper working surface.
28. The method of Claim 25, further comprising the step of rinsing out the etching chemicals;
29. The method of Claim 25, further comprising the step of positive surface preparing the semiconductor wafer
30. The method of Claim 29, wherein the step of positive surface preparing the semiconductor wafer comprises the step of repeating step (c) using hydrofluoric acid as the selected processing fluids.
31. The method of Claim 25, further comprising the step of cleaning the etched semiconductor wafer,
32. The method of Claim 31, wherein the step cleaning the etched semiconductor wafer comprises the steps of:
repeating step (c) using SC-1 solution as the selected processing fluids; and repeating step (c) using SC-2 solution as the selected processing fluids.
33. The method of Claim 32 further comprising the step of preheating the cleaning solutions SC-1 and SC-2 to a temperature of at least 70 C degrees.
34. The method of Claim 31, further comprising the step of rinsing the semiconductor wafer after cleaning.
35. The method of Claim 34, further comprising the steps of
repeating step (c) using ultrapure nitrogen gas as the selected processing fluids, and
spinning the wafer by rotating the upper working surface, the upper working surface being rotatable and vertically movable, while repeating step (c) using hot nitrogen gas as the selected processing fluids.
36. The method of Claim 25, wherein the step (f) of etching comprises the step of repeating step (c) using a premixed Blended Fluoric Acid (BHF) mixture.
37. The method of Claim 17 where the chemical processing of the semiconductor wafer comprises a photolithography process, wherein the step (b) of supporting the wafer comprises the step of attaching the wafer to the lower working surface, the lower working surface being rotatable and movable toward and away from the upper working surface, wherein step (c) is performed using a cleaning solution as the selected processing fluids to clean the top surface of the wafer while baking the wafer using heating elements located in the lower working surface, the method further comprising the steps of:
(d) priming the surface of the wafer;
(e) applying resist to the surface of the wafer;
(f) exposing the wafer, and
(g) preparing the wafer.
38. The method of Claim 37, wherein the step (d) of priming the surface of the wafer comprises the step of repeating step (c) using an adhesion promoter
39. The method of Claim 38, wherein the step priming the surface of the wafer comprises the step of repeating step (c) using hexamethyl disilazane (HMDS) for silicon dioxide as the adhesion promoter.
40. The method of Claim 37, wherein the step (g) of preparing the wafer comprises the steps of developing the wafer, rinsing the wafer, and etching the wafer, stripping the resist from the wafer, cleaning the wafer and drying the wafer.
41. The method of Claim 37, wherein the attaching step comprises the step of applying a vacuum through at least one entry opening located in the lower working surface.
42. The method of Claim 37, wherein the step of baking comprises the step of heating the wafer to a temperature of about 200 to 250 C degrees for at least 30 minutes.
43. The method of Claim 37, wherein the step (e) of applying resist to the surface of the wafer comprises the steps of:
spinning the wafer by rotating the lower working surface, and
repeating step (c) using resist as the selected processing fluids.
44. The method of Claim 17, wherein the chemical processing of the semiconductor wafer comprises a chemical vapor deposition process, wherein the step (b) of supporting the wafer comprises the step of attaching the wafer to the upper working surface, the upper working surface being rotatable and movable toward and away from the lower working surface; further comprising the step of forming a film on the surface of the wafer by heating the wafer using heating elements located in the upper working surface is performed prior to performing step (c) using one or more gasses chosen to react with the surface as the selected processing fluids
45. The method of Claim 44, wherein the attaching step comprises the step of applying a vacuum through the at least one entry opening located in the upper working surface.
46. The method of Claim 44, further comprising the step of spinning the wafer by rotating the upper working surface during the step of forming a film on the surface of the wafer.
47. The method of Claim 44, further comprising the step of oscillating the wafer by moving the upper working surface toward and away from the lower working surface during the step of forming 2 film on the surface of the wafer.
48. The method of Claim 17, wherein the chemical processing of the semiconductor wafer comprises a thin-film deposition of metals process, wherein the step (b) of supporting the wafer comprises the step of attaching the wafer to the upper working surface, the upper working surface being rotatable and movable toward and away from the lower working surface; wherein step (c) is performed using a steam of gas as the selected processing fluids to form a metallic thin film on the surface of the wafer, the method further comprising the steps of:
prior to performing step (c), heating the wafer using heating elements located in the upper working surface; and
prior to performing step (c), evacuating the chamber;
wherein the steam of gas is introduced into the chamber through the entry openings on the lower working surface.
49. The method of Claim 48, wherein the attaching step comprises the step of applying a vacuum through the at least one entry opening located in the upper working surface.
50. The method of Claim 48, further comprising the step of spinning the wafer by rotating the upper working surface during the step of introducing a steam of gas into the chamber,
51. The method of Claim 48, further comprising the step of oscillating the wafer by moving the upper working surface toward and away from the lower working surface during the step of introducing the steam of gas into the chamber.
52. The method of Claim 17, where the chemical processing of the semiconductor wafer comprises a surface chemical analysis process, wherein the step (b) of supporting the wafer comprises the step of attaching the wafer to the upper working surface, the upper working surface being rotatable and movable toward and away from the lower working surface, the method further comprising the steps of:
(d) collecting and sampling the selected processing fluids from the at least one drain, and
(e) analyzing the concentrated residue for contaminants.
53. The method of Claim 52, wherein the attaching step comprises the step of applying a vacuum through the at least one entry opening located in the upper working surface.
54. The method of Claim 52, wherein the step (d) of collecting and sampling the selected processing fluids further comprises the step of concentrating the collected and sampled fluids to form a residue.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9515144A JP2000501231A (en) | 1995-10-13 | 1996-10-09 | Semiconductor wafer chemical processing method and apparatus |
| AU72625/96A AU7262596A (en) | 1995-10-13 | 1996-10-09 | Method and apparatus for chemical processing semiconductor wafers |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US54307195A | 1995-10-13 | 1995-10-13 | |
| US08/711,131 US6239038B1 (en) | 1995-10-13 | 1996-09-09 | Method for chemical processing semiconductor wafers |
| US08/543,071 | 1996-09-09 | ||
| US08/711,131 | 1996-09-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO1997014178A1 WO1997014178A1 (en) | 1997-04-17 |
| WO1997014178B1 true WO1997014178B1 (en) | 1997-05-15 |
Family
ID=27067229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US1996/016150 WO1997014178A1 (en) | 1995-10-13 | 1996-10-09 | Method and apparatus for chemical processing semiconductor wafers |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6239038B1 (en) |
| JP (1) | JP2000501231A (en) |
| AU (1) | AU7262596A (en) |
| TW (1) | TW365550B (en) |
| WO (1) | WO1997014178A1 (en) |
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