WO1997009758A1 - Laser a decalage de temperature - Google Patents
Laser a decalage de temperature Download PDFInfo
- Publication number
- WO1997009758A1 WO1997009758A1 PCT/GB1996/002171 GB9602171W WO9709758A1 WO 1997009758 A1 WO1997009758 A1 WO 1997009758A1 GB 9602171 W GB9602171 W GB 9602171W WO 9709758 A1 WO9709758 A1 WO 9709758A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- laser cavity
- laser
- temperature
- heat sink
- cavity according
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/042—Arrangements for thermal management for solid state lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0612—Non-homogeneous structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
Definitions
- the invention relates to lasers and particularly to microchip lasers emitting in the blue
- the resonator comprising a gain material and frequency doubling material.
- the frequency doubling material is highly transmissive at the second harmonic thereof.
- Such a laser cavity is only known in a discrete component
- the difference in the temperature of the laser cavity is the difference in the temperature of the laser cavity.
- phase matching temperature and the operating temperature is positive, and/or more
- the difference is greater than the bandwidth of the non-linear material.
- temperature difference can be between 5°C and 20 °C, and more specifically about
- the monolithic laser comprises a gain material which is directly
- the gain material is Nd: YAG and the non-linear material can be
- the KNb0 3 is preferably cut for critical phase matching at 45 °C, whilst the
- operating temperature of the laser cavity is about 36°C, or at 40°C whilst operating at
- Another aspect of the invention provides a laser comprising a laser cavity according
- the laser comprises a temperature
- the regulator for the laser cavity.
- the regulator can comprise a heat sink which is operably
- the regulator in thermal contact with the laser cavity and can comprise a brass ring for example.
- the regulator can further comprise a peltier element in thermal contact with the heat sink
- thermo-couple which can be attached to the heat sink or a
- the mounting can be a brass ring also.
- Figure 1 is a schematic side elevation view of a laser cavity and part of a
- Figure 2 is a schematic perspective view of crystallographic orientation of the
- Figure 3 is a graph of the blue laser output power as a function of crystal heat
- the insert shows 946 nm output power under the same operating
- Figure 4 is a graph for a Ti:sapphire pumped laser according to the invention:
- Figure 5 is a graph for a diode pumped laser according to the invention: Blue
- a laser cavity 10 comprising a layer of gain
- 10 comprises a input surface 18 comprising a reflective coating and an output surface 20 also comprising a reflective coating, both of which coatings have high reflectance
- Cavity 10 is mounted at output surface 20, for example using a known cement or
- mounting ring 22 is in thermal contact with a peltier element 26 which in turn is in
- thermo-couple 24 can be attached to mounting
- the mounting 22, peltier element 26 and heat sink 28 are annular.
- the laser according to the invention comprises a pump source such as a laser diode or
- gain material 12 is Nd: YAG and the non-linear material is KNb0 3 .
- the gain material has a fundamental laser radiation wavelength of 946 nm and second
- the gain material is preferably 1 mm thick and
- the crystal is polished plane parallel and bonded, for example, by direct optical contacting, to the KNb0 3 crystal which is preferably in the order of
- the coatings have high transmittance at 809 nm also.
- KNb0 3 is a desirable doubling material due to its high non-linearity and ability to be
- the KNb0 3 is angle cut for a phase matching
- crystal heat sink temperature T x is adjusted using the temperature control regulator and
- T x ofthe laser cavity provides optimum output power in the blue.
- the blue 473 nm and the 946 nm output vary as a function of the absorbed pump
- a laser cavity comprising a KNb0 3 crystal, angle cut to phase
- a diode source which can be a 2 W (200 x 1 micron emitter) diode
- non-linear material could be BBO ( ⁇ -Barium Borate. ⁇ -BaB0 3 ) which
- LBO Lithium triborate. LiB0 3
- FWHM bandwidth
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Lasers (AREA)
Abstract
La présente invention concerne une cavité (10) de laser monolithique comportant une couche de matière d'amplification (12) et une couche de matière non linéaire (14), cette dernière étant taillée afin d'être en correspondance de phase critique avec la fréquence fondamentale de la matière d'amplification à une température qui est différente de la température de service de la cavité de laser.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU68825/96A AU6882596A (en) | 1995-09-04 | 1996-09-04 | Temperature mis-matched laser |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9517960.2 | 1995-09-04 | ||
GB9517960A GB2304979A (en) | 1995-05-13 | 1995-09-04 | Temperature mismatched laser |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1997009758A1 true WO1997009758A1 (fr) | 1997-03-13 |
Family
ID=10780126
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB1996/002171 WO1997009758A1 (fr) | 1995-09-04 | 1996-09-04 | Laser a decalage de temperature |
Country Status (2)
Country | Link |
---|---|
AU (1) | AU6882596A (fr) |
WO (1) | WO1997009758A1 (fr) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0596714A1 (fr) * | 1992-11-06 | 1994-05-11 | Mitsui Petrochemical Industries, Ltd. | Appareil laser à état solide |
WO1995006345A2 (fr) * | 1993-08-26 | 1995-03-02 | Laser Power Corporation | Microlaser bleu profond |
-
1996
- 1996-09-04 AU AU68825/96A patent/AU6882596A/en not_active Abandoned
- 1996-09-04 WO PCT/GB1996/002171 patent/WO1997009758A1/fr active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0596714A1 (fr) * | 1992-11-06 | 1994-05-11 | Mitsui Petrochemical Industries, Ltd. | Appareil laser à état solide |
WO1995006345A2 (fr) * | 1993-08-26 | 1995-03-02 | Laser Power Corporation | Microlaser bleu profond |
Non-Patent Citations (5)
Title |
---|
DIXON G J ET AL: "Efficient blue emission from an intracavity-doubled 946-nm Nd:YAG laser", OPTICS LETTERS, FEB. 1988, USA, vol. 13, no. 2, ISSN 0146-9592, pages 137 - 139, XP002020295 * |
HE C ET AL: "DUAL-POLARIZATION MODES AND SELF-HETERODYNE NOISE IN A SINGLE- FREQUENCY 2.1-UM MICROCHIP HO,TM:YAG LASER", OPTICS LETTERS, vol. 19, no. 6, 15 March 1994 (1994-03-15), pages 396 - 398, XP000434792 * |
MATTHEWS D G ET AL: "Blue microchip laser fabricated from Nd:YAG and KNbO/sub 3/", OPTICS LETTERS, 1 FEB. 1996, OPT. SOC. AMERICA, USA, vol. 21, no. 3, ISSN 0146-9592, pages 198 - 200, XP002020296 * |
SEELERT W ET AL: "SECOND-HARMONIC GENERATION AND DEGRADATION IN CRITICALLY PHASE-MATCHED KNBO3 WITH A DIODE-PUMPED Q-SWITCHED ND:YLF LASER", OPTICS LETTERS, vol. 17, no. 20, 15 October 1992 (1992-10-15), pages 1432 - 1434, XP000307534 * |
ZARRABI J H ET AL: "INTRACAVITY, FREQUENCY-DOUBLED, MINIATURIZED ND:YALO3 BLUE LASER AT 465 NM", APPLIED PHYSICS LETTERS, vol. 67, no. 17, 20 October 1995 (1995-10-20), pages 2439 - 2441, XP000544328 * |
Also Published As
Publication number | Publication date |
---|---|
AU6882596A (en) | 1997-03-27 |
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