WO1997009654A1 - Optischer schalter - Google Patents
Optischer schalter Download PDFInfo
- Publication number
- WO1997009654A1 WO1997009654A1 PCT/EP1996/003877 EP9603877W WO9709654A1 WO 1997009654 A1 WO1997009654 A1 WO 1997009654A1 EP 9603877 W EP9603877 W EP 9603877W WO 9709654 A1 WO9709654 A1 WO 9709654A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- waveguide
- waveguides
- input
- output
- coupler
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 56
- 230000008878 coupling Effects 0.000 claims description 31
- 238000010168 coupling process Methods 0.000 claims description 31
- 238000005859 coupling reaction Methods 0.000 claims description 31
- 230000005693 optoelectronics Effects 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 20
- 238000010521 absorption reaction Methods 0.000 claims description 14
- 230000000694 effects Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 6
- 230000007704 transition Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000006096 absorbing agent Substances 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims description 2
- 230000005699 Stark effect Effects 0.000 claims 2
- 238000002834 transmittance Methods 0.000 claims 2
- 238000009413 insulation Methods 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 230000005684 electric field Effects 0.000 description 8
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/31—Digital deflection, i.e. optical switching
- G02F1/313—Digital deflection, i.e. optical switching in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/31—Digital deflection, i.e. optical switching
- G02F1/313—Digital deflection, i.e. optical switching in an optical waveguide structure
- G02F1/3132—Digital deflection, i.e. optical switching in an optical waveguide structure of directional coupler type
- G02F1/3133—Digital deflection, i.e. optical switching in an optical waveguide structure of directional coupler type the optical waveguides being made of semiconducting materials
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
Definitions
- the invention relates to an optical switch with a first input waveguide and a second input waveguide, a first output waveguide and a second output waveguide and with controllable switching means, by means of which optionally
- optical switches are used in communications technology, where information is transmitted via optical fibers in the form of glass fibers.
- the optical switches then serve as switches or crossings through which information arriving via an input channel in the form of a modulated light wave can optionally be routed to one of two different output channels.
- the optical switches are controlled by electrical signals. By using a matrix of Depending on the triggering of the switches, one input channel can be connected to one of a large number of output channels.
- the present invention relates to a so-called .2x2 switch "" .
- This is an optical switch with two input waveguides and two output waveguides, with each input waveguide optionally being able to be optically coupled to each of the two output waveguides. The respective other input waveguide is then coupled to the other output waveguide.
- the Franz Keldysh effect is the change in the optical absorption or transmission of a semiconductor under the influence of an electric field.
- the most obvious phenomenon is a shift in the absorption edge towards smaller photon energies, i.e. longer wavelengths towards (.Encyclopedia of natural sciences and technology "", Verlag Moderne Industrie (1980), 1510).
- the known arrangement shows undesirably strong crosstalk and highly asymmetrical switching behavior.
- the electrode lies there on the waveguide into which the light wave is coupled.
- the invention has for its object in an optical switch of the type mentioned with two input waveguides and two output waveguides
- the switching means comprise a first connection waveguide which can be coupled to the first input waveguide via a first coupler and a second coupler to the second output waveguide, and a second connection waveguide which can be coupled to the via a third coupler second input waveguide and a fourth coupler can be coupled to the first output waveguide,
- the means for generating the electro-optical effect are located in the output parts of the input-side couplers and in the input-side parts of the output-side couplers, namely the ends of the connecting waveguides. If an electrical field is applied to these parts of the couplers, they show a changed refractive index and a changed absorption capacity. This prevents the transition of the light wave into the connecting waveguide and from it into the associated output waveguide coupled to it. This applies to a light wave which is fed to the switch via the first input waveguide as well as to a light wave which is fed to the switch via the second input waveguide. In this case, these light waves are each directed onto the first or the second output waveguide. This can be done in several ways:
- the first input waveguide can be directly connected to the first output waveguide between the first and fourth couplers and the second input waveguide can be directly connected to the second output waveguide between the third and second couplers.
- the means for generating the electro-optical effect When the means for generating the electro-optical effect are activated, the light waves are conducted practically without loss from the first input waveguide into the first output waveguide and from the second input waveguide onto the second output waveguide. If these "means " are not activated, the couplers take effect.
- the light wave from the first input waveguide is guided largely without loss exclusively due to the dimensioning of the waveguide onto the second output waveguide. Analogously, the light wave is conducted from the second input waveguide, likewise largely without loss, into the first output waveguide.
- the optical switch does not work exactly symmetrically but practically or largely without loss.
- the crosstalk between the two switched channels can be reduced to less than -40 dB.
- the arrangement can also be designed so that
- Couplers can be coupled to a third connecting waveguide
- the second input waveguide and the second output waveguide can be coupled to a fourth connecting waveguide via a seventh and an eighth coupler
- means for generating the electro-optical effect are activated either in the first to fourth couplers or in the fifth to eighth couplers.
- An active control signal is therefore required for each "switching state" of the optical switch.
- the transmission is therefore exactly symmetrical for both switching states and practically lossless with extremely low crosstalk.
- the control of the second and fourth or the sixth and eighth couplers to produce an electro-optical effect in the straight coupler sections at the ends of the connecting waveguides ensures that no " switched through" light wave from the output waveguides into the connecting waveguide.
- Waveguide can be coupled. This arrangement also ensures that the optical switch can be used in both directions: the functions of input and output waveguides can be interchanged.
- Fig.l is a schematic representation of an optical
- FIG. 2 shows a modification of the optical switch according to FIG. 1 such that the two "switching states" "are generated by active signals, so that symmetrical conditions prevail.
- FIG. 3 shows a section through a substrate with waveguides for producing an optical one
- FIG. 4 is a representation similar to FIG. 3 and illustrates the intensity curve of a
- FIG. 5 shows the intensity curve in the X direction of FIG. 4 in the middle of the wave-guiding layer.
- Fig. 6 is a schematic diagram illustrating a matrix of switches of the type shown in Fig Fig.l or 2 shown type, through which a plurality of m inputs can be distributed to a plurality of m outputs.
- Fig.l 10 denotes a rectangular substrate which carries waveguides produced by the methods of integrated optics.
- the substrate 10 carries a first input waveguide 12 and a second input waveguide 14.
- a light wave I x for example from a glass fiber, is introduced into the first input waveguide 12 on the end face.
- a light wave I 2 is introduced into the second input waveguide 14 on the end face.
- the two input waveguides 12 and 14 run parallel to one another and parallel to the long sides of the substrate from the narrow side of the rectangular substrate 10.
- a first output waveguide 16 and a second output waveguide 18 are provided on the opposite narrow side of the substrate 10.
- a light wave O x emerges from the first output waveguide 16.
- a light wave 0 2 emerges from the second output waveguide 18.
- the two output waveguides 16 and 18 run parallel to one another and parallel to the long sides of the substrate from the narrow side of the rectangular substrate 10 and are aligned with the first and second input waveguides 12 and 14, respectively.
- the first input waveguide 12 is included connected to the first output waveguide 16 by a first waveguiding connection 20.
- the first input waveguide 12, the wave-guiding connection 20 and the first output waveguide 16 form a single continuous waveguide.
- the second input Waveguide 14 connected to the second output waveguide 18 by a second waveguiding connection 22.
- the first wave-guiding connection 20 contains a third, straight coupler section 24 parallel to the longitudinal edge of the substrate 10, a loop 26 arched towards the longitudinal edge of the substrate and a fourth, straight coupler section 28, which is aligned with the coupler section 24.
- the second wave-guiding connection 22 contains a first straight coupler section 30 parallel to the longitudinal edge of the substrate 10, a loop 32 arched towards the longitudinal edge of the substrate and a second straight coupler section 34 which is aligned with the coupler section 30.
- a first connection waveguide 36 and a second connection waveguide 38 are arranged in the region between the waveguiding connections 20 and 22.
- the first connecting waveguide 36 contains at one end a first straight coupler section 40 which runs at a short distance from the first coupler section 24 of the waveguiding connection 20 and forms a first coupler 42 with it.
- the first connecting waveguide 36 also contains at the other end a second straight coupler section 44 which runs at a short distance from the fourth coupler section 34 of the waveguiding connection 22 and forms a second coupler 46 with it.
- the two coupler sections 40 and 44 of the first connecting waveguide 36 are connected by a central section 48 which runs obliquely (from top left to bottom right in FIG. 1).
- the second connecting waveguide 38 contains at one end a third straight coupler section 50 which runs at a short distance from and with the third coupler section 30 of the waveguiding connection 22 forms third coupler 52.
- the second connecting waveguide 38 also contains at the other end a fourth straight coupler section 54 which runs at a short distance from the second coupler section 28 of the waveguiding connection 20 and forms a fourth coupler 56 with it.
- the two coupler sections 50 and 54 of the second connecting waveguide 38 are connected by a central section 58 which runs obliquely (from the bottom left to the top right in FIG. 1).
- the two central sections 48 and 58 intersect at an angle excluding a wave transition (> 10 °).
- the waveguide arrangement is centrally symmetrical to the crossing point of the two central sections 48 and 58.
- the lengths of the coupler sections correspond to the coupling lengths, so that in the case of undisturbed waveguides, the entire light wave, for example I lt , is coupled from the input waveguide 12 via the couplers, for example 42 and 46, into the cross-lying output waveguides, for example 18.
- the first input waveguide 12 is thus coupled to the second output waveguide 18 and the second input waveguide is coupled to the first output waveguide with almost no loss.
- Means are provided for in the coupler sections 40, 44; 50, 54 of the connecting waveguides 36 and 38 induce electro-optical effects, by means of which a change in the refractive index and thus at the same time a substantial increase in the absorption capacity of the waveguide material is brought about.
- Coupler sections 40, 44; 50, 54 of the connecting waveguides 36 and 38 consist of a p-doped Layer 60 (FIG. 3) and an n-doped layer 62 above and below an undoped, waveguiding layer 64 in the coupler sections 40, 44; 50, 54.
- the layers 60 and 62 form a pn junction, ie practically a diode.
- the p-doped layers 60 are connected to metallic contacts 66 and 68.
- the n-doped layers 62 are connected to metallic contacts 70 and 72 or 74 and 78 and are at a reference potential. A voltage in the reverse direction of the diode can be applied between the relevant metallic contacts. No electricity then flows. However, an electric field is generated in the wave-guiding layer 64.
- Layers 60 are isolated from the rest of the respective interconnect waveguide by a narrow break in the waveguide. Instead, a selective p-diffusion can also be provided in the layers 60 in contrast to the undoped central sections 48 and 58 of the ribs assigned to the connecting waveguides (FIG. 3). Then contacts 66 and 68 are isolated from each other.
- the p-doped regions are then preferably beyond the straight coupling sections as far as into the curved sections of the connecting waveguides, i.e. the sections between the coupling links of the couplers and the central sections of the connecting waveguides, extended.
- an electric field is generated in the wave-guiding layer 64. Due to the Franz Keldysh effect, this electric field causes the band edge for the transmission of the semiconductor material to shift towards longer wavelengths. When the wavelength of the light guided in the waveguides is just above it Band edge, then a strong change in the refractive index and a strong increase in the absorption capacity of the material for this wavelength occurs when the electric field is applied.
- metals are highly absorbent due to their high electrical conductivity. A light wave striking a metal surface therefore does not penetrate the metal but is reflected. If there is no voltage, the waveguides are undisturbed. On the coupling length, the light waves are coupled, for example, from the first input waveguide via the first coupler 42 into the first connecting waveguide 36 and from there via the second coupler 46 into the output waveguide 18 without loss.
- absorbers 78 and 80 are in the areas between the loops 26 and 32 and the connecting waveguides 36 and 38 arranged.
- the optical switch of Fig.l works with the two switching states “voltage applied” “and .no voltage applied” ". In the former case, the light waves are just being passed through, in the latter case the inputs and outputs are connected crosswise.
- 2 shows an optical switch to which voltages are applied in both switching states, but to different contacts, so that completely symmetrical switching behavior can be achieved.
- the basic structure of the optical switch of FIG. 2 is similar to the optical switch of FIG. Corresponding parts are given the same reference numerals in FIG. 2 as in FIG.
- the first and second input waveguides 12 and 14 are not connected directly to the output waveguides 16 or 18 via waveguiding connections, as in FIG. Rather, the connection of the first input waveguide 12 to the first output waveguide 16 takes place via a third connection waveguide 82.
- the first input waveguide 12 can be coupled to the third connection waveguide 82 via a fifth coupler 84.
- the third connecting waveguide 82 is in turn one sixth coupler 86 can be coupled to the first output waveguide 16.
- the second input waveguide 14 can be coupled to a fourth connecting waveguide 90 via a seventh coupler 88.
- the fourth connecting waveguide 82 can in turn be coupled to the second output waveguide 18 via an eighth coupler 92.
- the couplers 84, 86, 88 and 92 are identical to one another and constructed similarly to the couplers 42,
- the third connecting waveguide 82 has a straight coupling section 94 at its input end.
- the coupling section 94 runs a short distance from the end of the input waveguide 12 on the side facing away from the coupling section 40.
- the coupling section 94 also extends over the coupling length, on which a wave from the input waveguide 12 can be completely coupled into the third connecting waveguide 82.
- the coupling section 94 is constructed as described above with reference to FIG. 3.
- Layer 60 is connected to a metallic contact 96.
- the metallic contact 96 extends outside "" of the third connecting waveguide 82 parallel to the longitudinal edge of the substrate 10.
- the metallic contact 96 is also connected to the layer 60 of a corresponding coupling section 98 at the other end of the third connecting waveguide 82.
- the coupling section 98 forms part of the sixth coupler 86.
- the layer 62 of the coupling section 94 is connected to the metallic contacts 70 and 72, which are kept at reference potential. If a voltage is present on contacts 66 and 68 and no voltage on contact 96 and its counterpart 100, then the light wave from first input waveguide 12 is coupled through coupler 84, third connecting waveguide 82 and coupler 86 first output waveguide 16 coupled. Correspondingly, the light wave from the second input waveguide 14 is coupled into the second output waveguide 18 via the coupler 88, the fourth connecting waveguide 90 and the coupler 92.
- the first input waveguide 12 is cross-coupled with the second output waveguide 18 and the second input waveguide 14 the first output waveguide 16.
- a voltage is present at the metallic contact 96 and its counterpart 100 but there is no voltage at the contacts 66 and 68
- the first input waveguide 12 is cross-coupled with the second output waveguide 18 and the second input waveguide 14 the first output waveguide 16.
- Four coupler sections are active or inactive, for example 94.98 and 95.99 or 40.44 and 50.54. In both switching states there are symmetrical conditions for the transmission of light waves.
- FIG 3 illustrates the construction and manufacture of an optical switch of the type described above.
- Sulfur-doped indium phosphide InP serves as substrate 10.
- This material is n-type.
- the n-doped contact layer 62, a lightly n-doped optical buffer layer 104, the undoped, quaternary, waveguiding layer 64, an indium phosphide cover layer 106 and a quaternary etching stop layer 108 are applied to this substrate 10 in one step by means of epitaxy.
- An undoped indium phosphide layer 109 and the p-doped layer follow the etch stop layer 108, likewise applied by epitaxy like the further layers that follow Layer 60 in the form of an indium phosphide layer and a quaternary p-doped contact layer 110.
- the n-doped contact layer 62 is connected to a reference potential.
- a voltage for generating an electric field in the wave-guiding layer 64 can be applied to the contact layer 110 via a metallic contact (not shown in FIG. 3).
- the layers 60, 110 and 109 form ribs 112 corresponding to the waveguide structure of Fig.l or 2, as indicated in Fig.3. Such ribs 112 cause a lateral limitation of a light wave running in the wave-guiding layer.
- a rib 112 with a high refractive index is provided in an extended, waveguiding layer 64 which extends over the surface of the substrate 10, then a light wave running in the layer 64 is not only limited vertically in FIG. 3 by the boundaries of the waveguiding layer and also bundled laterally, horizontally in FIG. 3 by the dimensions of the ribs 112, on both sides of which the waveguiding layer 64 (and 106) borders on air, that is to say a medium with a low refractive index.
- 4 shows a calculated intensity distribution across the cross section of the light wave.
- the individual closed curves are curves of the same electric field strength or intensity.
- the innermost curve 114 corresponds to an intensity of 90% of the maximum field strength.
- the outermost curve 116 corresponds to an intensity of 10% of the maximum field strength.
- 5 shows the field strength profile transverse to the direction of propagation of the light waves
- the layers described are first built up by means of epitaxy. A photoresist is applied to the top layer. A mask is placed on the photoresist, which reproduces the structure of the electrodes to be applied to the waveguide as a negative. The photoresist is then irradiated with UV light. The photoresist is developed or hardened at the points where the electrodes are to be created.
- Metal Ti / Pt / Au
- a metal layer is formed on a photoresist layer partially developed according to the mask.
- the photoresist is then dissolved in acetone. Where the photoresist has not been exposed, it can be mechanically removed using the lift-off technique. This also removes the metal layer deposited on these unexposed parts of the photoresist.
- a metal layer is then obtained on the surface of the block formed by the layers described, the contours of which correspond to the electrodes to be applied to the waveguides.
- etching step in which the top quaternary layer 110 is etched away using reactive ion beam etching (RIE).
- RIE reactive ion beam etching
- the indium phosphide Layers 60 and 109 etched away to the etch stop layer 108. In this way, the projecting ribs are formed, by which the light waves are limited laterally.
- this expression is not limited to visible light but also includes the infrared light that is preferably used here.
- each coupler In the case of a practical optical switch of the type shown in FIG. 1, the length of each coupler is 4 mm. The entire structure is 14 mm long. The width of the ribs 112 defining the waveguide is 2.5 ⁇ m. In the area of the couplers, the distance between the adjacent ribs is 3.5 ⁇ m. The ends of the input and output waveguides are arranged at intervals of 250 ⁇ m from each other in order to facilitate the coupling of light-guiding fibers.
- FIG. 6 shows a matrix of optical switches E ik of the type described above.
- the switches are connected and controlled in series in various combinations such that each input I to I m can be connected to each output 0 X to 0 m .
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9510862A JPH11514451A (ja) | 1995-09-07 | 1996-09-04 | 光学的スイッチ |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19534523.1 | 1995-09-07 | ||
DE19534523 | 1995-09-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1997009654A1 true WO1997009654A1 (de) | 1997-03-13 |
Family
ID=7772447
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP1996/003877 WO1997009654A1 (de) | 1995-09-07 | 1996-09-04 | Optischer schalter |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPH11514451A (de) |
CA (1) | CA2231424A1 (de) |
DE (1) | DE19637696A1 (de) |
WO (1) | WO1997009654A1 (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002031555A2 (en) * | 2000-10-10 | 2002-04-18 | Lightcross, Inc. | Optical attenuator |
US6792180B1 (en) | 2001-03-20 | 2004-09-14 | Kotura, Inc. | Optical component having flat top output |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58120223A (ja) * | 1982-01-12 | 1983-07-18 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜形光スイツチ |
US5002354A (en) * | 1989-10-16 | 1991-03-26 | Gte Laboratories Incorporated | High-extinction 2×2 integrated optical changeover switches |
-
1996
- 1996-09-04 CA CA 2231424 patent/CA2231424A1/en not_active Abandoned
- 1996-09-04 WO PCT/EP1996/003877 patent/WO1997009654A1/de active Application Filing
- 1996-09-04 DE DE19637696A patent/DE19637696A1/de not_active Withdrawn
- 1996-09-04 JP JP9510862A patent/JPH11514451A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58120223A (ja) * | 1982-01-12 | 1983-07-18 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜形光スイツチ |
US5002354A (en) * | 1989-10-16 | 1991-03-26 | Gte Laboratories Incorporated | High-extinction 2×2 integrated optical changeover switches |
Non-Patent Citations (5)
Title |
---|
ACKLIN B ET AL: "Novel optical switches based on carrier injection in three and five waveguide couplers: TIC and SIC", ELECTRONICS LETTERS, vol. 30, no. 3, 3 February 1994 (1994-02-03), pages 217/218, XP000435334 * |
AIZAWA T ET AL: "InGaAsP/InP MQW directional coupler switch with small and low-loss bends for fiber-array coupling", IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 6, no. 6, 1 June 1994 (1994-06-01), pages 709 - 711, XP000457228 * |
OKAYAMA H ET AL: "Low-crosstalk 2X2 digital optical switch", ELECTRONICS LETTERS, vol. 30, no. 5, 3 March 1994 (1994-03-03), pages 403 - 405, XP000442909 * |
PATENT ABSTRACTS OF JAPAN vol. 007, no. 231 (P - 229) 13 October 1983 (1983-10-13) * |
SHIMOMURA K ET AL: "2V drive-voltage switching operation in 1.55um GaInAs/InP MQW intersectional waveguide optical switch", ELECTRONICS LETTERS, vol. 28, no. 10, 7 May 1992 (1992-05-07), pages 955 - 957, XP000305481 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002031555A2 (en) * | 2000-10-10 | 2002-04-18 | Lightcross, Inc. | Optical attenuator |
WO2002031555A3 (en) * | 2000-10-10 | 2002-10-03 | Lightcross Inc | Optical attenuator |
US6792180B1 (en) | 2001-03-20 | 2004-09-14 | Kotura, Inc. | Optical component having flat top output |
Also Published As
Publication number | Publication date |
---|---|
JPH11514451A (ja) | 1999-12-07 |
CA2231424A1 (en) | 1997-03-13 |
DE19637696A1 (de) | 1997-03-13 |
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