WO1997004478B1 - Plasma treatment apparatus for large area substrates - Google Patents
Plasma treatment apparatus for large area substratesInfo
- Publication number
- WO1997004478B1 WO1997004478B1 PCT/US1996/011213 US9611213W WO9704478B1 WO 1997004478 B1 WO1997004478 B1 WO 1997004478B1 US 9611213 W US9611213 W US 9611213W WO 9704478 B1 WO9704478 B1 WO 9704478B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- plasma
- shield
- dielectric window
- sources
- aperture
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract 5
- 238000009832 plasma treatment Methods 0.000 title 1
- 210000002381 Plasma Anatomy 0.000 claims abstract 18
- 230000003287 optical Effects 0.000 claims abstract 2
- 239000003990 capacitor Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 229910052904 quartz Inorganic materials 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 239000000523 sample Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
Abstract
A plasma system (10) for processing large area substrates. In one embodiment the system includes a plurality of radiofrequency (rf) plasma sources (40) removably attached to the rf transparent windows (26) of a processing chamber (14). The number and distribution of sources is varied to provide the size and uniformity of the plasma field required to treat the substrate. A plurality of plasma probes (74), such as Langmuir probes, Faraday cups and optical sensor are positioned within the chamber and in electrical communication with the plasma sources adjust the rf field produced by the individual sources to maintain the desired degree of field uniformity.
Claims
1. A system for treating a substrate with a plasma, said system comprising: a vacuum chamber in which a plasma is generated and having a plurality of substantially planar rf transparent windows on the surface of said chamber; an rf generator; at least two rf sources, each external to said vacuum chamber and each said rf source electrically connected to said rf generator and juxtaposed to a respective one of said plurality rf transparent windows, and operative to generate said plasma in the vacuum chamber; said rf sources operative to produce a local, substantially uniform plasma proximate said substrate.
2. The system of claim 1 further comprising at least one tuning circuit, each said at least one tuning circuit electrically connected to one of said at least two rf sources.
3. The system of claim 2 further comprising: at least one sensor measuring at least one characteristic of said plasma; and a controller receiving from said at least one sensor at least one characteristic of said plasma and controlling said plurality of tuning circuits in response thereto.
4. The system of claim 1 wherein each of said plurality of rf transparent windows is constructed of quartz.
5. The system of claim 1 wherein each of said plurality of rf transparent windows is constructed of glass.
6. The system of claim 3 wherein said at least one sensor is a Langmuir probe. - 13 -
7. The system of claim 3 wherein said at least one sensor is an array of Faraday cups.
8. The system of claim 7 wherein said system further comprises a wafer holder and said Faraday cups are attached to said wafer holder.
9. The system of claim 7 wherein said system further comprises a test wafer having a plurality of Faraday cups on the surface of said test wafer.
10. The system of claim 3 wherein said at least one sensor is an optical sensor.
11. The system of claim 2 wherein said at least one tuning circuit comprises a tuning capacitor electrically connected in parallel with said respective RF source.
12. A plasma source comprising: a shield open at a first end and having a shield aperture at a second end; an rf antenna, positioned within the shield; and a dielectric window positioned to enclose said first end of said shield, said dielectric window defining a dielectric window aperture and having a dielectric gas inlet tube extending from said dielectric window aperture and through said shield aperture, to permit gas to pass through said shield and through said dielectric window aperture.
13. An inline continuous plasma processing system comprising: a housing including a plurality of baffles located within said housing; a plurality of RF plasma sources positioned along said housing between said baffles; each said plasma source comprising: - 14 -
a shield open at a first end and having a shield aperture at a second end; an rf antenna, positioned within the shield; and a dielectric window positioned to enclose said first end of said shield, said dielectric window defining a dielectric window aperture and having a dielectric gas inlet tube extending from said dielectric window aperture and through said shield aperture, to permit gas to pass through said shield and through said dielectric window aperture into said housing; and a conveyor belt located within said housing, said conveyor belt conveying a wafer within said housing and below a plasma generated by each of said RF plasma sources between said baffles.
14. The system of claim 1 wherein each of said rf sources is independently adjustable to maintain the uniformity of said local plasma.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU63449/96A AU718941B2 (en) | 1995-07-19 | 1996-07-02 | System for the plasma treatment of large area substrates |
JP50669797A JP4128217B2 (en) | 1995-07-19 | 1996-07-02 | System for plasma processing of large area substrates |
EP96922642A EP0842307B1 (en) | 1995-07-19 | 1996-07-02 | System for the plasma treatment of large area substrates |
CA002227233A CA2227233C (en) | 1995-07-19 | 1996-07-02 | Plasma treatment apparatus for large area substrates |
DE69625068T DE69625068D1 (en) | 1995-07-19 | 1996-07-02 | SYSTEM FOR PLASMA TREATMENT OF LARGE AREA SUBSTRATES |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/503,973 | 1995-07-19 | ||
US08/503,973 US5653811A (en) | 1995-07-19 | 1995-07-19 | System for the plasma treatment of large area substrates |
Publications (3)
Publication Number | Publication Date |
---|---|
WO1997004478A2 WO1997004478A2 (en) | 1997-02-06 |
WO1997004478A3 WO1997004478A3 (en) | 1997-03-20 |
WO1997004478B1 true WO1997004478B1 (en) | 1997-05-15 |
Family
ID=24004315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1996/011213 WO1997004478A2 (en) | 1995-07-19 | 1996-07-02 | Plasma treatment apparatus for large area substrates |
Country Status (9)
Country | Link |
---|---|
US (3) | US5653811A (en) |
EP (1) | EP0842307B1 (en) |
JP (1) | JP4128217B2 (en) |
KR (1) | KR19990029069A (en) |
CN (1) | CN1192788A (en) |
AU (1) | AU718941B2 (en) |
CA (1) | CA2227233C (en) |
DE (1) | DE69625068D1 (en) |
WO (1) | WO1997004478A2 (en) |
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