DE102018113444B3 - Linear microwave plasma source with separate plasma spaces - Google Patents

Abstract

The invention relates to a linear microwave plasma source, the plasma source comprising a microwave antenna surrounded by a dielectric tube, a wall having at least one opening and at least one gas inlet. The opening is arranged on the side of the plasma source facing a substrate surface to be treated by a plasma treatment. According to the invention, the plasma source has at least one partition wall which extends from opposite sides of the wall to the dielectric tube and thus divides the space within the plasma source into at least two subspaces

Description

The invention relates to a linear microwave plasma source with separate plasma spaces.

Linear microwave plasma sources consist of a rod-shaped microwave antenna, which is arranged in a dielectric tube and is therefore also referred to as an inner conductor of a coaxial conductor arrangement. The outer conductor is then formed by the generated plasma on the dielectric tube. This coaxial conductor arrangement is surrounded by a wall and thereby forms the actual plasma source. The wall of the plasma source in this case has on at least one side an opening through which the plasma exits the plasma source and in the vicinity of which a substrate to be treated is arranged outside the plasma source. The plasma source extends along the axis of the rod-shaped microwave antenna with a defined length, wherein the opening has a much smaller width compared to the length of the plasma source, so that it is referred to as a linear plasma source. Such plasma sources are, for example, in the DE 198 12 558 B4 described.

In the prior art linear microwave plasma sources, the space within the plasma source forms a continuous space in which the existing gases or gas fragments, for example plasma particles, can be distributed relatively freely.

In addition, the plasma generation is strongly affected by the ambient conditions in the plasma source, but, for example, in end portions of the linear microwave plasma source with respect to their extension along the axis of the microwave antenna from those in a central region of the plasma source with respect to their extent along distinguish the axis of the microwave antenna. Thus, the plasma treatments in these areas differ from each other, which can be detrimental to the homogeneity of the plasma treatment. However, it is difficult to compensate for the microwave power introduced into the respective area.

Plasma treatments, which are carried out with the aid of the plasma generated, are above all layer-separating processes such as CVD (chemical vapor deposition) or layer-removing processes, such as plasma etching. In both cases, often a first gas containing no or only a negligible chemically active component of the process carried out is introduced into the plasma source near the microwave antenna, while a second gas containing the chemically active component of the process is introduced near a substrate surface of the process to be treated substrate is introduced into the plasma source. The space within the plasma source may be divided into two areas: a plasma generation area in which a plasma is generated from the gases used and which extends close and substantially radially symmetric to the microwave antenna, and a plasma treatment area in which the plasma generated in the plasma generation area the gas fragments formed there excite and convert the second gas to such an extent that the desired treatment of the substrate surface takes place. The plasma treatment zone is located substantially near the substrate surface and may extend beyond the actual space of the plasma source. Both areas can also partially overlap, but a substantial spatial separation is advantageous. The overlapping area or a region connecting the plasma-generating area and the plasma-treatment zone is referred to as a connecting zone. Such a plasma processing apparatus is disclosed, for example, in US Pat EP 3 309 815 A1 described. The first gas and / or the second gas may also be gas mixtures of different gases.

In the known from the prior art plasma treatment devices, however, a diffusion of components of the second gas from the plasma treatment zone in the direction of the plasma source, which may adversely affect the service life of the plasma source and / or on the quality of the treated substrate surface or a change in the Process conditions of the performed process leads. Thus, for example, in layer-depositing processes, a layer may be grown on the dielectric tube and / or the wall of the plasma source, which on the one hand influences the decoupling of the microwave power into the surrounding gas-filled space and thus the generation of the plasma and the process conditions of the method carried out, and secondly can lead to particle formation and thus a deterioration in the quality of the deposited on the substrate surface layer. In addition, the layer deposition on the dielectric tube and / or the wall is often asymmetric, because due to the diffusion direction more components of the second gas reach the substrate facing side of the dielectric tube and the wall of the plasma source than the side facing away from the substrate of the dielectric tube and the wall. This can lead to a poorly compensatable asymmetric change in the plasma generation conditions in the plasma source. As a result, the service life of the plasma source is limited, ie the plasma source must be cleaned frequently. This leads to productivity losses and, as some parts of the plasma source for cleaning or for their replacement often have to be removed from the plasma treatment apparatus, at an increased cost in the disassembly and assembly of the plasma source, for example. With respect to the vacuum tightness of feedthroughs, etc. Similar effects also have coating-removing components of the second gas.

From the DE 10 2013 107 659 A1 For example, a coating apparatus is known in which two linear microwave plasma sources of the type described above are arranged in a vacuum chamber. The opening of the plasma space to the coating space is limited by two cylindrical tubes having through-holes through which gases are introduced into the plasma space in addition to the gases supplied by another gas supply. In order to clean the outer walls of the tubes of coated material, cleaning chambers are separated from the plasma chamber by partitions, wherein in the cleaning chambers brushes are provided for cleaning. The partitions extend from the wall of the vacuum chamber to the cylindrical tubes.

The DE 10 2006 048 814 A1 also shows a microwave plasma source having a linear antenna surrounded by an inner dielectric tube. In addition, an outer dielectric tube is concentrically disposed about the antenna, which extends from one side of the wall of the plasma chamber to the other side of the wall. The excited gas can flow out through pores in the outer dielectric tube into a plasma space, which is also the processing space.

The DE 10 2012 103 425 A1 discloses a microwave plasma source in which a grounded shield surrounds the plasma source, with the shield extending to the dielectric tube, but not from opposite sides of the wall of the plasma source.

The DE 10 2008 027 363 A1 describes a plasma processing plant having one or more plasma sources, which may be microwave plasma sources. In this case, a plasma chamber is separated by a plasma envelope from the wall of the vacuum chamber, wherein the plasma envelope extend from the plasma sources.

The DE 196 43 865 A1 is concerned with a coating system which comprises a microwave plasma source formed from a plurality of separately controllable modules. The plasma source has the following construction: A dielectric tube in which a gas flows and a plasma is ignited is arranged perpendicular to a microwave antenna, so that the dielectric tube does not surround the antenna.

Also the US 6 338 313 B1 Fig. 12 shows another type of plasma source and plasma processing equipment in which a plurality of plasma sources are arranged in different zones of the linearly extending equipment. The plasma sources consist of an inner tube, through which gas is introduced, a wound around the pipe antenna and a cylindrical grounded wall, which is separated by a quartz window to the processing room, the tube penetrates the quartz window The individual processing zones of the system are a partition separated.

It is therefore an object of the present invention to provide a linear microwave plasma source, with which the disadvantages of the prior art can be avoided or reduced.

The object is achieved by a linear microwave plasma source according to claim 1. Preferred embodiments can be found in the subclaims.

The linear microwave plasma source according to the invention, hereinafter referred to as the plasma source, contains a microwave antenna surrounded by a dielectric tube, a wall with at least one opening and at least one gas inlet. The opening of the wall is arranged on the side of the plasma source which faces a substrate surface to be treated with a plasma treatment. In addition, the plasma source according to the invention further comprises at least one partition wall, which extends from opposite sides of the wall to the dielectric tube and thus divides the space within the plasma source into at least two subspaces. Since all subspaces adjoin the dielectric tube, the different subspaces may also be referred to as different plasma spaces. In this case, the partition wall extends so far in the direction of the dielectric tube and in the space of the plasma source, that a particle exchange between the various subspaces at a remaining gap between the dielectric tube and the at least one partition wall is negligible. The at least one partition wall adjoins the wall of the plasma source in a gas-tight manner, ie even there, there is no gas exchange or negligible gas exchange between the partial spaces, which is negligible for the overall process. Thus, different plasma conditions and / or gas compositions can be set in the subspaces of the plasma source or different functionalities can be separated from one another. As a result, for example, a subspace in which a coating process or a layer removal process is to be carried out and another subspace in which, for example, a plasma is generated or in which another coating process or other layer removal process is to be carried out, are separated from each other and nevertheless operated with a single linear microwave antenna. Thus, it is possible to generate in a first subspace a component of a process, for example a gas offset into the plasma state, which then in another, second subspace for a further functional part of the process, for example the excitation of a layer-separating or layer-removing Gas, is used when a defined gas passage from the first to the second subspace is possible. This allows different functional rooms or functionalities of a process to be separated from one another.

The partition wall is preferably made of an electrically non-conductive material, such as quartz glass, alumina, glass ceramic, plastic, etc. or of various suitable composite materials, but may also be made of an electrically conductive material, such as. Stainless steel, aluminum, graphite, etc. or conductive Coatings on different substrates, exist. Combinations of different materials, for example in the form of layered structures, mixtures or juxtaposed different material areas, are possible.

In a first embodiment, a first partition wall, which preferably consists of two parts, extends from two opposite sides of the wall of the plasma source to the dielectric tube and in one or more planes along the axis of the microwave antenna up to the axis of the microwave antenna Along the axis of the microwave antenna opposite sides of the wall. Here, the opening of the wall should be understood as a side of the wall. Thus, the first partition wall divides the space of the plasma source into two subspaces extending along the direction of the axis of the microwave antenna and juxtaposed parallel with respect to the axis of the microwave antenna, each of which adjoins only a portion of the circumference of the dielectric tube, but over the whole Length of the microwave antenna along the axis of the microwave antenna extend. Thus, for example, a subspace of the plasma source adjacent to the opening of the wall can be separated from a subspace that does not adjoin the opening of the wall when the partition wall is parallel or oblique to the plane of the opening. If the dividing wall runs perpendicular to the plane of the opening or at an angle thereto, but in such a way that both partial spaces adjoin the opening, then two partial spaces arranged laterally next to one another and extending along the length of the axis of the microwave antenna relative to the plane of the opening can be created.

In a particular embodiment of the first embodiment, a second partition wall is arranged in one of the first partitions separated by the first partition walls, extending from all sides of the wall in this first compartment up to the first partition wall along a plane transverse to the axis of the microwave antenna and extends to the dielectric tube. Thus, the second partition wall divides the first subspace of the plasma source into two second subspaces arranged side by side along the direction of the axis of the microwave antenna.

In a second embodiment, a first partition wall extends along a plane transverse to the axis of the microwave antenna from the wall of the plasma source to the dielectric tube and surrounds this radially completely. Thus, the first partition wall divides the space of the plasma source into two subspaces juxtaposed along the direction of the axis of the microwave antenna, each adjoining the entire circumference of the dielectric tube, but extending only along part of the length of the microwave antenna along the axis of the microwave antenna ,

In a particular embodiment of the second embodiment, a second partition wall is arranged in one of the first partitions separated by the first partition walls, extending from two opposite sides of the wall of the plasma source each to the dielectric tube and in a plane along the axis of the microwave antenna up to the first partition wall and up to one of the first partition wall opposite side of the wall or a third partition wall which extends parallel to the first partition wall and is formed similar to this extends. Thus, the second partition wall divides the first subspace of the plasma source into two, parallel to the axis of the microwave antenna extending second subspaces, each of which adjoins only a portion of the circumference of the dielectric tube.

Each of the embodiments and configurations may have further partition walls, which further divide the first and possibly second subspaces.

Does the plasma source on a partition wall, along along a plane along the axis of the microwave antenna, that is, not transverse to this extends, this plane preferably extends through the axis of the microwave antenna and thus divides the circumference of the dielectric tube into two equal parts.

In another preferred embodiment, such a partition wall extending along a plane along the axis of the microwave antenna, i. not transverse thereto, spaced apart by a distance greater than 0 and less than the radius of the dielectric tube to the axis of the microwave antenna.

In a particular embodiment, at least one of the partition walls has openings which allow gas to pass from one of the subspaces separated from one another by this partition wall into the adjacent subspace. The openings in their shape, size and distribution are designed so that a defined gas exchange takes place between the adjacent subspaces, which is supported, for example, by corresponding pressure conditions or flow conditions in the respective subspaces during operation of the plasma source. Thus, for example, excited gas particles or gas fragments of a first gas, which is present in a first subspace, pass through the openings, while particles of a second gas, which is present in a second subspace, can pass only insignificantly through the openings.

In one embodiment, the plasma source further comprises at least one electrically conductive cylinder segment extending along the surface of the dielectric tube over at least a portion of the extent of the dielectric tube along the axis of the microwave antenna. "Along the surface" here means that the cylinder segment rests on the surface of the dielectric tube or is arranged at such a small distance from the surface of the dielectric tube that the formation of a plasma in the space between the dielectric tube and the cylinder segment is not possible or is negligible. This distance and the thickness of the cylinder segment are designed such that a passage of a necessary for the ignition of a plasma microwave power is prevented. The distance and the thickness are dependent on the power introduced into the microwave antenna and its frequency as well as the gas composition, the pressure and the material of the electrically conductive cylinder segment, and in particular its electrical conductivity. The cylinder segment acts as a coaxial outer conductor to the microwave antenna and prevents formation of a plasma in a radially adjacent to the outside of the cylinder segment space region of the plasma source. About the arc length of the cylinder segment of the microwave power consumption can be adjusted in the respective subspace.

Preferably, at least one cylinder segment is attached to one of the at least one partition wall. Alternatively, a cylinder segment may also be attached to the wall of the plasma source or another holding device so that there is no connection to a dividing wall. Advantageously, the cylinder segments can also be formed from an electrically conductive tube, in which locally defined recesses define the areas open for microwaves for plasma generation. Such a tube is preferably connected at the ends of the linear plasma source to the wall of the plasma source.

In a particular embodiment, the plasma source has at least two rod-shaped microwave antennas which extend parallel to one another and which are each surrounded by a dielectric tube. Each microwave antenna and its associated dielectric tube are referred to hereinafter as "plasma line". Furthermore, at least one of the dividing walls is arranged between the dielectric tubes and, together with at least one dividing wall, which adjoins the wall of the plasma source, subdivides the space of the plasma source into at least two partial spaces. In other words, the subdivision of the plasma space of a plasma source into two (or more) subspaces by means of a partition wall (or several partition walls) can also be realized for plasma sources with two (or more) plasmalines arranged side by side, with at least one partition wall between them extending dielectric tubes of the plasmalines. In this case, a subregion of the plasmalines is assigned to a subspace. For example. a first subregion of a first plasmaline and a first subregion of a second plasmaline a first subspace, while a second subregion of the first plasmaline and a second subregion of the second plasmaline are associated with a second subspace.

In a particular embodiment of the embodiment of the plasma plasma generator having a plurality of plasmalines, the plasma source further comprises at least one partition wall extending in a plane extending between two of the dielectric tubes and intersecting the plane of the partition wall disposed between these dielectric tubes. Such a dividing wall divides at least one subspace of the plasma source between the plasmalines, wherein the dividing wall, unlike the dividing wall, does not necessarily adjoin one of the dielectric tubes.

In a particular embodiment, the plasma source has two openings on opposite sides of the wall and at least one partition wall which extends from two opposite sides of the wall connecting the two openings to the dielectric tube and along the axis of Microwave antenna runs on. Thus, the space of the plasma source can be subdivided into two subspaces each adjacent to one of the two openings of the plasma source and into which a microwave power is fed from the microwave antenna.

In a particular embodiment, the plasma source in addition to the two openings of the wall just described also two rod-shaped microwave antennas extending parallel to each other and each surrounded by a dielectric tube, ie two plasmalines, on. The plasmalines are arranged one behind the other on a straight line connecting the two openings. Moreover, at least two partition walls each extending from two opposite sides of the wall connecting the two openings to one of the dielectric pipes and extending along the axes of the plasmalines are arranged in the plasma source so as to interpose between the partition walls Partial space of the plasma source separated from the openings is formed. As a result, the plasma source is subdivided into three subspaces, two of which adjoin one of the plasmalines and of which in turn only a subspace adjoins one of the openings. Thus, for example, an excited first gas can be generated within the subspace divided by the openings, which then possibly excites different second gases into the subspaces adjoining one of the openings and enables a corresponding plasma treatment of a substrate surface assigned to the respective opening.

In a particular embodiment of the plasma source, the plasma source further comprises a protective lining on the sides of the wall of the plasma source adjoining the opening. This protective lining reduces coating of the wall or attack of gas components on the wall and may be made of an electrically non-conductive material, such as quartz glass, glass ceramic, plastic or composite materials, etc., or an electrically conductive material, such as aluminum, stainless steel or graphite , exist, wherein different areas of the protective lining can also consist of different materials. A combination of different materials in the form of a layer structure or a fabric structure or any other form is possible. Dielectric areas of the protective lining are permeable to the microwave power introduced into the microwave antenna, while electrically conductive areas are impermeable to the microwave power, as has already been described with reference to the cylinder segments. The protective lining is preferably detachably connected to the wall of the plasma source. The protective lining thus lies against the surfaces of the plasma source to be protected, i. the wall, the partition wall and / or the dielectric tube and possibly other components of the plasma source, on that no plasma formation is possible between the protective lining and the surfaces to be protected. The protective lining can be composed of several individual parts and different materials. In a particular embodiment of this embodiment, at least one partition wall is an integral part of the protective lining. In other words, the protective lining is designed and arranged in the plasma source such that it fulfills the function of the partition wall and no separate partition wall is required.

In another particular embodiment of the plasma source, the plasma source further comprises a gas guide extending from at least one side of the wall of the plasma source into the space of the plasma source and at least over a portion of the extent of the plasma source in the direction along the axis of the microwave antenna and Width of an open for gas exchange connection zone between a plasma generating zone adjacent to the dielectric tube and the opening of the wall in this portion of the expansion of the plasma source with respect to a plasma source without Gasleitvorrichtung reduced. The gas guiding device alters the flow behavior of the gases at least in a subspace of the plasma source with respect to a plasma source without a gas guiding device.

If the plasma source has such a gas guiding device and contains at least one dividing wall which extends in a plane parallel to the opening of the plasma source, then at least one gas inlet is preferably arranged between the plane of the dividing wall and the gas guiding device.

Preferably, in each case at least two gas inlets are arranged in at least two of the subspaces formed by the at least one partition wall according to the invention. Thus, each of the resulting subspaces can be supplied with a different gas. In this case, the term "gas" also means a gas mixture, it being possible for different gas mixtures to differ from the constituents of the gas mixture and / or their proportions.

As far as the different embodiments and embodiments of the plasma source according to the invention are not mutually exclusive, they can be freely combined with each other. The invention will be explained in more detail with reference to the figures. The sizes of the individual components as well as the distances between them are not shown to scale.

• 1A eine erste Ausgestaltung einer ersten Ausführungsform der erfindungsgemäßen Plasmaquelle im Querschnitt,
• 1B die Plasmaquelle der 1A in einer Sicht entlang der Linie A-A',
• 2A eine zweite Ausgestaltung der ersten Ausführungsform der erfindungsgemäßen Plasmaquelle im Querschnitt,
• 2B die Plasmaquelle der 2A in einer Sicht entlang der Linie B-B'
• 3A eine erste Ausgestaltung einer zweiten Ausführungsform der erfindungsgemäßen Plasmaquelle im Querschnitt,
• 3B die Plasmaquelle der 3A in einer Sicht entlang der Linie C-C',
• 4A eine weitere Ausführungsform der erfindungsgemäßen Plasmaquelle im Querschnitt,
• 4B die Plasmaquelle der 4A in einer Sicht entlang der Linie D-D',
• 5A und 5B weitere beispielhafte Anordnungen von Teilungswänden mit Bezug auf die Mikrowellenantenne,
• 6A und 6B beispielhafte Anordnungen von elektrisch leitfähigen Zylindersegmenten,
• 7A eine erste Ausgestaltung einer dritten Ausführungsform der Plasmaquelle mit zwei nebeneinander angeordneten Plasmalines,
• 7B eine zweite Ausgestaltung der dritten Ausführungsform der Plasmaquelle,
• 8A und 8B beispielhafte Ausgestaltungen der erfindungsgemäßen Plasmaquelle mit einer Schutzauskleidung der Wandung,
• 9 eine beispielhafte Ausgestaltung der erfindungsgemäßen Plasmaquelle mit einer Gasleitvorrichtung,
• 10 eine beispielhafte Ausgestaltung der erfindungsgemäßen Plasmaquelle zwei nebeneinanderangeordneten Plasmalines und einer Gasleitvorrichtung,
• 11A eine Ausgestaltung der erfindungsgemäßen Plasmaquelle mit zwei Öffnungen,
• 11B eine Ausgestaltung der erfindungsgemäßen Plasmaquelle mit zwei Plasmalines und zwei Öffnungen und
• 12 eine Plasmabehandlungsvorrichtung mit mehreren erfindungsgemäßen Plasmaquellen.

Show it:

• 1A a first embodiment of a first embodiment of the plasma source according to the invention in cross-section,
• 1B the plasma source of 1A in a view along the line A-A ' .
• 2A a second embodiment of the first embodiment of the plasma source according to the invention in cross section,
• 2 B the plasma source of 2A in a view along the line B-B '
• 3A a first embodiment of a second embodiment of the plasma source according to the invention in cross section,
• 3B the plasma source of 3A in a view along the line C-C ' .
• 4A a further embodiment of the plasma source according to the invention in cross-section,
• 4B the plasma source of 4A in a view along the line D-D ' .
• 5A and 5B further exemplary arrangements of partition walls with respect to the microwave antenna,
• 6A and 6B exemplary arrangements of electrically conductive cylinder segments,
• 7A a first embodiment of a third embodiment of the plasma source with two plasmalines arranged side by side,
• 7B A second embodiment of the third embodiment of the plasma source,
• 8A and 8B exemplary embodiments of the plasma source according to the invention with a protective lining of the wall,
• 9 an exemplary embodiment of the plasma source according to the invention with a gas guiding device,
• 10 an exemplary embodiment of the plasma source according to the invention two juxtaposed Plasmalines and a gas conducting device,
• 11A An embodiment of the plasma source according to the invention with two openings,
• 11B an embodiment of the plasma source according to the invention with two plasmalines and two openings and
• 12 a plasma treatment apparatus having a plurality of plasma sources according to the invention.

The 1A and 1B show a first embodiment of a first embodiment of the plasma source according to the invention 1 that a wall 10 with an opening 11 having. The opening 11 is a substrate surface which is processed by means of a process associated with one in the plasma source 1 generated plasma is performed opposite. Inside the wall 10 is a linear microwave antenna 12 arranged in the illustrated cross section has a circular shape and along the y- Axis extends rod-shaped. The microwave antenna 12 is from a dielectric pipe 13 surrounded, which has a circular cross-section and also along the y Extends. On the outside of the wall 10 are magnetic devices 14 arranged within the plasma source 1 create a magnetic field and along the wall 10 can be moved. The magnetic devices 14 however, are not necessarily part of the plasma source, but may not be present in other embodiments. On an upper side of the wall 10 that of the opening 11 is opposite, is a first gas inlet 15a arranged, through which a first gas in the plasma source 1 is initiated. Near the opening 11 are second gas inlets 15b arranged, by means of which with the aid of gas lines, a second gas having at least in the excited state layer-forming or layer-removing constituents in the plasma source 1 is admitted. Along the y-axis can also have several first gas inlets 15a and a plurality of second gas inlets 15b be arranged.

From the gases used is in a plasma generation area, which is essentially around the dielectric tube 13 extends, in the operating state of the microwave antenna 12 produces a plasma. The plasma generated in the plasma generation region excites in a plasma treatment zone near the opening 11 the second gas to the extent that the desired treatment of the substrate surface takes place. The plasma generation region and the plasma treatment zone are interconnected by a connection zone in which hardly any plasma is newly generated and there is a reduced amount of the second gas relative to the plasma treatment zone. The extent and spatial shape of the plasma or the plasma generation region, the connection zone and the plasma treatment zone is determined by the arrangement, polarity and design of the magnetic device 14 influenced with.

According to the invention contains the plasma source 1 continue a partition wall 2 , which in the case shown two parts 2a and 2 B includes, each with respect to a plane passing through the axis of the microwave antenna 12 runs and perpendicular to a plane 111 the opening 11 the wall 10 stands, opposite sides of the wall 10 adjoin and from there into the interior of the plasma source 1 to the dielectric tube 13 and about the Expansion of the plasma source 1 in the direction along the axis of the microwave antenna 12 ie in y- Direction, extend and there again to the wall 10 adjoin. As in the 1A and 1B can be seen, between the dielectric tube 13 and the parts 2a . 2 B the partition wall 2 remain a gap, which is so narrow that a passage of gas through it is negligible. In the illustrated embodiment of the first embodiment, the parts extend 2a and 2 B the partition wall 2 each in a plane parallel to the plane 111 the opening 11 ie in one xy Level, and are gas-tight with the wall 10 connected. The partition wall 2 divides the space of the plasma source 1 ie the space inside the wall 10 and limited by the opening 11 , in two subspaces 16a and 16b which are functionally separated from each other and both to the dielectric tube 13 but only to a part of the circumference of the dielectric tube 13 , adjoin. It takes the subspace 16a the upper part of the plasma source space 1 one, ie the area not at the opening 11 adjoins, while the subspace 16b the lower, to the opening 11 adjacent area of the plasma source space 1 occupies. The two subspaces 16a and 16b are thus along the z Axis arranged side by side. As an alternative to the illustrated embodiment, the parts 2a and 2 B even in different planes that are parallel or even oblique to the plane 111 the opening 11 run, be arranged as long as the functional separation of the subspaces 16a and 16b given is.

The partition wall 2 has openings in the illustrated embodiment 21 on, which is a passage of gases, gas components or gas fragments from the subspace 16a in the subspace 16b enable. These openings 21 can have a circular shape in plan view, as in 1B is shown, or any other regular or irregular other shape, such as oval, square or the shape of a slot, and each extending over the entire thickness of the partition wall 2 ie penetrate them completely. The openings 21 may be uniform or nonuniform over the extent of the partition wall 2 be distributed across. The shape and / or size of the openings 21 can be between different openings 21 differ and are, as well as the number of openings 21 and their distribution over the extent of the partition wall 2 , depending on a desired gas passage freely selectable and can be determined using known in the art simulations.

Although the subspaces are 16a and 16b through the openings 21 no longer gas-tightly separated, but causes the partition wall 2 a functional separation of the two subspaces 16a and 16b , For example, a passage of layer-separating or layer-removing gas components from the subspace 16b in the subspace 16a reduced or almost completely prevented under appropriate pressure and flow conditions. This can be a layer deposition or a layer removal in the subspace 16a be reduced or avoided, reducing the service life of the plasma source 1 extended, plasma generation and the plasma treatment of a substrate surface better, especially independent of each other, influenced and the quality of the substrate treatment can be improved.

The parts 2a and 2 B the partition wall 2 can be in one area of xy Level also be interconnected and thus form a coherent structure.

Is the partition wall 2 formed of a material which influences the propagation of a magnetic field, for example of a ferromagnetic material, so can further magnetic devices 14 on the wall 10 , for example in the area of the subspace 16b , which are the plasma formation and distribution in the subspaces 16a and 16b in a desired way.

In 1B is in addition to the already mentioned components of the plasma source 1 continue a bracket 17 with which the dielectric tube 13 in the wall 10 is attached, shown. The microwave antenna 12 is normally about not shown centering in the axis of the dielectric tube 13 held. In the holder 17 In addition, a vacuum feedthrough for components of the microwave antenna 12 or for the dielectric tube 13 and possibly electrical connections of the microwave antenna 12 be integrated. The holder 17 Can also be used to attach the partition wall 2 or parts thereof.

The plasma source 1 has in the embodiment of 1A a trapezoidal cross-section, in which the opening 11 opposite upper side of the wall 10 parallel to the plane 111 the opening 11 and the lateral parts of the wall 10 at an obtuse angle from the upper side in the direction of the plane 111 the opening 11 run straight. The outer shape of the plasma source 1 However, it is not limited to this form, but may be arbitrary. Thus, for example, the plasma source may have the shape of a half cylinder or another round shape or a rectangular shape (in cross section) in the upper area.

The 2A and 2 B show a second embodiment of the first embodiment of the plasma source 1 in which the partition wall 2 with their parts 2a and 2 B extending in a plane passing through the axis of the microwave antenna 12 runs and perpendicular to the plane 111 the opening 11 the wall 10 stands. That is the partition wall 2 extends in one Y Z -Level. The partition wall 2 adjoins the upper side of the wall 10 that is the opening 11 opposite side of the wall 10 , and to the plane 111 the opening 11 and extends from there into the interior of the plasma source 1 to the dielectric tube 13 and about the extent of the plasma source 1 in the direction along the axis of the microwave antenna 12 , ie in the y direction, and there again borders on the wall 10 at. The partition wall 2 divides the space of the plasma source 1 again in two subspaces 16a and 16b which are functionally separated from each other and both to the dielectric tube 13 but again only a part of the circumference of the dielectric tube 13 , adjoin. It takes the subspace 16a the in 2A left area of the plasma source space 1 one, while the subspace 16b the in 2A right area of the room of the plasma source 1 occupies, with both subspaces 2a and 2 B to the opening 11 adjoin. The two subspaces 16a and 16b are thus along the x -Axis arranged side by side. In the subspace 16a are on the upper side of the wall 10 at least a first gas inlet 15a and near the opening 11 at least a second gas inlet 15c arranged while in the subspace 16b on the upper side of the wall 10 at least a first gas inlet 15b and near the opening 11 at least a second gas inlet 15d are arranged. As in 2 B for the first gas inlet 15b You can also see several first gas inlets 15a . 15b and / or a plurality of second gas inlets 15c . 15d along the y- Be arranged axis. This allows in the two subspaces 16a and 16b over the first gas inlets 15a . 15b and the second gas inlets 15c . 15d different gases in the respective subspace 16a . 16b the plasma source 1 let in and different plasma processes are performed. In the case shown are in the partition wall 2 no openings arranged so that the two subspaces 16a . 16b except for a gas exchange over the opening 11 away, are completely separated from each other. To exchange gas across the opening 11 The part can be reduced 2 B the partition wall 2 get further than the level 111 the opening 11 extend. Alternatively, the part 2 B the partition wall 2 also be designed shorter, so he above the level 111 the opening 11 ends and the plane 111 the opening 11 not touched.

As in 2 B can be seen, the part can 2 B the partition wall 2 eg with the holder 17 the plasma source 1 ie near the wall 10 , with the part 2a the partition wall 2 be connected, so that the partition wall 2 consists of one piece.

Again, the parts can 2a and 2 B the partition wall 2 again in different levels, as long as the functional separation of the subspaces 16a and 16b given is.

In the 3A and 3B is a first embodiment of a second embodiment of the plasma source according to the invention 1 represented, which is a partition wall 2 which extends in a plane transverse to the axis of the microwave antenna 12 The dividing wall is adjacent 2 to the wall 10 the plasma source 1 and the opening 11 and extends to the dielectric tube 13 which completely surrounds it radially. This extends the partition wall 2 in a xz -Level. Again, there is a small gap between the dielectric tube 13 and the partition wall 2 , There, as in 3B you can see two dividing walls 2 along the extent of the plasma source 1 along the axis of the microwave antenna 12 ie along the y -Axis, the space is the plasma source 1 in three subspaces 16a . 16b and 16c divided, each to the opening 11 and the entire circumference of the dielectric tube 13 adjoin and along the y -Axis are arranged side by side. In each of the subspaces 16a . 16b and 16c are at least a first gas inlet 15a on the upper side of the wall 10 and at least two second gas inlets 15b near the opening 11 arranged. This allows, for example, a different gas composition or different process control in the individual subspaces 16a . 16b and 16c , whereby, for example, inhomogeneities in the plasma treatment of a substrate surface can be compensated. In the case shown are no openings in the partition walls 2 However, this is possible, as in all embodiments and embodiments of the plasma source in which it is not explicitly excluded and necessary for the functionality of the plasma source. The partition walls 2 may also be required before opening 11 ends or even beyond.

4A and 4B show a further embodiment of the plasma source 1 in which the first and the second embodiment, ie dividing walls extending along the axis of the microwave antenna 12 extend, and dividing walls, which are transverse to the axis of the microwave antenna 12 extend, are combined with each other. This is the way the plasma source points 1 two parts 2a and 2 B a first partition wall, which is in a xy Level over the entire extent of the plasma source 1 along the axis of the microwave antenna 12 ie in y Direction, extending and thus the space of the plasma source 1 into two first subspaces, namely an upper subspace, which adjoins the upper side of the wall 10 adjoins, and in a lower subspace, which is at the opening 11 adjoins, subdivide. This is similar to the one in the 1A and 1B illustrated embodiment. In addition, the plasma source indicates 1 two second partition walls 2c up, each one in a Y Z Extend the first subspaces further along the y Subdivide the axis, similar as with respect to the 3A and 3B described. As a result, within the space of the plasma source 1 six second subspaces 16aa to 16Bc before, each functionally from the adjacent second subspaces 16aa to 16Bc are separated. Here are the second subspaces 16aa to 16ac in the upper first subspace of the space of the plasma source 1 arranged while the second subspaces 16ba to 16Bc are arranged in the lower first subspace and respectively to the opening 11 adjoin. Thus, both the positive results of the first embodiment and the positive results of the second embodiment can be achieved simultaneously.

Of course, other or further combinations of partition walls within a plasma source 1 possible.

The 5A and 5B show further exemplary arrangements of partition walls 2a to 2d with respect to a microwave antenna 12 and the dielectric tube 13 , For example, through the partition walls 2a to 2c of the 5A a division of the circumference of the dielectric tube 13 , and thus in the respective subspace 16a to 16c emitted microwave power into three sub-areas, each one specific subspace 16a to 16c are assigned, possible. In this case, the partition walls extend 2a and 2 B in opposite directions from the dielectric tube 13 away, but in the same plane, while the partition wall 2c perpendicular to the plane of the partition walls 2a and 2 B stands. This is in the subspaces 16a and 16b in each case about one quarter of the circumference of the dielectric tube 13 for decoupling microwave power available while in subspace 16c about half of the circumference of the dielectric tube 13 is available. Of course, the partition walls 2a and 2 B be arranged in different planes, so that any divisions of the circumference of the dielectric tube 13 on the individual subspaces 16a to 16c possible are. 5B also shows that the plane in which a partition wall extends does not necessarily pass through the axis of the microwave antenna 12 must go. So is, for example, the plane in which the partition walls 2a and 2 B in the embodiment of 5B extend, with a distance H to the axis of the microwave antenna 12 arranged larger than 0 (zero) and smaller than the radius R of the dielectric tube 13 is. Through the additional partition wall 2d now lie four subspaces 16a to 16d before, of which the subspaces 16a and 16b each less than a quarter of the circumference of the dielectric tube 13 adjoin while the subspaces 16c and 16d each to more than a quarter of the circumference of the dielectric tube 13 adjoin. By a suitable selection of the number and arrangement of the partition walls, the space of the plasma source can be almost arbitrarily divided into different functional subspaces and the plasma generation in the individual subspaces can be influenced.

Another possibility of influencing the plasma generation in the individual subspaces is in the 6A and 6B shown. These are close to the surface of the dielectric tube 13 electrically conductive cylinder segments 3a and 3b arranged in the region of the periphery of the dielectric tube 13 in which they are arranged, prevent plasma generation. The cylinder segments can 3a and 3b be formed similar, as in 6A or different arc lengths of the perimeter of the dielectric tube 13 cover, as in 6B shown. In addition, the cylinder segments 3a and 3b as desired over the circumference of the dielectric tube 13 be distributed. You can, for example, each on partition walls 2a . 2 B be attached like this in 6A is shown, or may be on the wall 10 or a special bracket, without the partition walls 2a . 2 B to touch, like this in 6B is shown. In the 6B illustrated embodiment could also by the formation of the cylinder segments 3a . 3b as parts of an electrically conductive tube which passes over the dielectric tube 13 mounted and having openings can be realized. The openings in the tube would then not the cylinder segments 3a and 3b covered areas of the dielectric tube 13 represent. The electrically conductive tube is preferably at its ends with the wall 10 connected. Of course, embodiments with more than the two cylinder segments shown here are also 3a and 3b or also with only one cylinder segment, which is arbitrary along the circumference of the dielectric tube 13 is arranged, possible.

The 7A and 7B each show an embodiment of a third embodiment of the plasma source 1 with two plasmalines arranged side by side. Each plasmaline consists of a rod-shaped microwave antenna and a surrounding dielectric tube. So form the microwave antenna 12a and the dielectric tube 13a a first plasmaline, while the microwave antenna 12b and the dielectric tube 13b form a second plasmaline. In the third embodiment of the plasma source 1 this still only has one opening 11 on, with the axes of the plasmalines parallel to each other and in relation to the plane 111 the opening 11 extend next to each other. From the wall 10 the plasma source 1 partition walls extend 2a . 2 B up to the dielectric tubes 13a . 13b of the plasmalines, as related to 1A is described. The plasma source 1 now has an additional partition wall 2c on that is between the dielectric pipes 13a and 13b the plasmalines extends. Together with the partition walls 2a and 2 B divides the partition wall 2c the space of the plasma source 1 in a subspace 16a and a subspace 16b , where the subspace 16a not to the opening 11 bordering, as already with respect to the 1A has been described. In addition, further partition walls 4 , which is the space of the plasma source 1 divide further, in the plasma source 1 be arranged like this in 7B you can see. There is such a partition 4 in contrast to the partition walls 2a to 2c so arranged that they are not attached to a dielectric tube 13a . 13b adjacent to one of the plasmalines. For example. can the partition 4 in a plane that runs between the plasmalines and the partition wall 2c cuts, extend. In this case, the partition 4 in both subspaces 16a and 16b extend, as in 7B is shown, and thus subdivide these subspaces further, so that four subspaces 16aa to 16bb arise. Alternatively, the partition may 4 even in one of the subspaces 16a or 16b extend, so that only the corresponding subspace is further subdivided. Also the partitions 4 each extend to the wall 10 or to the level 111 the openings 11a and 11b and to a possibly existing partition wall, in this case the partition wall 2c , and adjoin them gas-tight. Alternatively, the partition 4 as needed also in front of the plane 111 the openings 11a and 11b ends or even beyond. Optionally, the partitions, similar to the partition walls, may have openings for a defined passage of gas from one compartment to another compartment. Such openings are in the 5A to 7B both for the partition walls 2a to 2d as well as for the partition 4 not shown, but possible.

Of course, also for those in the 7A and 7B Plasma sources shown with several Plasmalines more partition walls with the partition walls already shown 2a to 2c combined or other partition walls are arranged. For example, two partition walls perpendicular to the plane can also be used 111 the opening 11 run and each along the axis of one of the microwave antennas 12a . 12b be provided, as with reference to the 2A and 2 B was explained. This would make the room the plasma source 1 is subdivided into three subspaces, of which the two lateral subspaces are supplied with microwave power only by a part of the circumference of one of the plasmalines, while microwave power is supplied to the middle subspace of parts of the peripheries of both plasmalines.

The 8A and 8B show further possible embodiments of the plasma source according to the invention 1 These embodiments are similar to those with reference to FIGS 1A and 1B described embodiment are formed, but in addition a protective lining 5 the wall 10 the plasma source 1 in the opening 11 facing subspace 16b having. In addition, in the 8A and 8B other external forms of the plasma source 1 represented as the previously shown trapezoidal shape In 8A is additionally shown that the number of gas inlets 15a that are capable of containing one or more gases in the subspace 16a supply, as well as their arrangement and the number and arrangement of the magnetic devices 14 not limited to the cases shown in the previous figures, but is arbitrarily expandable.

The protective lining 5 is in the area of the subspace 16b along the subspace 16b facing sides of the wall 10 and the partition wall 2 and in some embodiments also at least partially on the subspace 16b adjacent perimeter of the dielectric tube 13 arranged. It can be between the protective lining 5 and the surfaces to be protected, ie the wall 10 , the partition wall 2 and the dielectric tube 13 , there is a distance, but dimensioned such that a plasma generation in the space between the protective lining 5 and the surfaces to be protected is prevented. The protective lining 5 consists of an electrically conductive material, such as. Aluminum, stainless steel, graphite or carbon fiber material, or of a dielectric material, such as glass, glass ceramic, alumina or microwave suitable plastics, and may also be made of a combination of materials in a layer structure, a mixture or fabric or areas of different materials. Depending on the material of the protective lining 5 becomes the coupling of microwave power from the microwave antenna 12 in the subspace 16b affected. So can in the in 8A illustrated embodiment in which the protective lining 5 also to the subspace 16b adjacent perimeter of the dielectric tube 13 completely covered, a coupling of microwave power in the subspace 16b with an electrically conductive protective lining 5 completely or almost completely or with a dielectric protective lining 5 almost undiminished. The protective lining 5 can also consist of various parts, which in turn can consist of different materials.

In the 8B illustrated embodiment provides a combination of an electrically conductive protective lining 5 and a dielectric cylinder segment 52 This covers the dielectric cylinder segment 52 to the subspace 16b adjacent perimeter of the dielectric pipe 13 completely, while the protective lining 5 only above a part of the subspace 16b adjacent perimeter of the dielectric tube 13 is arranged. The protective lining works in this subarea 5 similar to an electrically conductive cylinder segment, which with respect to the 6A and 6B was explained.

The protective lining 5 has openings for the gas inlets 15b as well as openings 51 on, with openings 21 in the partition wall 2 correspond and together with these a defined passage of gases and gas components from the subspace 16a in the subspace 16b allow. The openings 21 . 51 can also be dimensioned so that also charge carriers are transported through from the plasma generation area.

The protective lining 5 and optionally the dielectric cylinder segment 52 protects the wall 10 , the partition wall 2 and the dielectric tube 13 before the direct interaction with plasma particles and in particular prevents the deposition of materials on the wall 10 , the partition wall 2 or the dielectric tube 13 in the area of the subspace 16b , The layer deposition takes place instead on the protective lining 5 and optionally on the dielectric cylinder segment 52 which, however, is detachable with the wall 10 , the partition wall 2 and optionally the dielectric tube 13 are connected or only rest on this. This is the protective lining 5 and optionally the dielectric cylinder segment 52 in a simple way from the plasma source 1 removable when a critical coating thickness is reached, and may be outside the plasma source 1 cleaned and for a new use in the plasma source 1 be prepared or replaced by new equivalent components.

Is the protective lining 5 mechanically stable enough and formed in a corresponding manner, it can also act alone as a partition wall in the sense of the application, so that no physically independent partition wall 2 as they are in the 8A and 8B is shown is necessary.

9 shows an exemplary embodiment of a plasma source according to the invention 1 with a gas guiding device 6 , where the partition wall 2 similar, as with respect to the 1A and 1B explained, is executed. The gas conducting device 6 is in the subspace 16b arranged and extends from the wall 10 out into the subspace 16b into it, initially parallel to the partition wall 2 and then a circular arc adapted to the contour of the dielectric tube 13 each with a distance to the partition wall 2 or to the dielectric tube 13 Due to their shape, the gas guiding device is limited 6 the extent of the already with reference to the 1A described connection zone 18 , which is a plasma generation area 19 essentially radially around the dielectric tube 13 extends, with a plasma treatment zone near the opening 11 is formed, connects and changes the flow conditions within the subspace 16b , This reduces the gas guiding device 6 a movement of gas components of a second gas, which via the gas inlets 15b in the subspace 16b is admitted, in the direction of the dielectric tube 13 and the partition wall 2 , As a result, in the case of a film deposition process, a coating of the dielectric pipe becomes 13 and the partition wall 2 reduced. For a good control of the flow conditions in the subspace 16b and in the plasma generation area 19 Set conditions favorable for plasma generation in the subspace 16b are preferably additional gas inlets 15c between the partition wall 2 and the gas conducting device 6 in the subspace 16b arranged like this in 9 you can see. Preferably, via the additional gas inlets 15c the first gas passing through the gas inlet (s) 15a in the subspace 16a is admitted, fed, but also another gas can be supplied.

The gas conducting device 6 may consist of an electrically conductive or an electrically insulating material or a combination of various suitable materials.

10 shows an exemplary embodiment of a plasma source according to the invention 1 with two plasmalines arranged next to each other and a gas guiding device 6 , wherein, similar as with respect to the 7B further explains a partition 4 arranged between the plasmalines and the partition wall 2 is also formed between the plasmalines. In the case shown, the gas guide extends 6 straight from the wall 10 out at an acute angle towards the opening 11 out. At the partition 4 are in the case illustrated no parts of the gas guide 6 arranged. However, this is also possible, so that in each subspace 16a-b and 16bb one to a plane perpendicular to the plane of the opening 11 stands, symmetrical arrangement of the gas guiding device would be present.

Especially for large lateral expansions of the opening 11 in the direction transverse to the axes of the plasmalines also in a central region of the opening 11 a sufficient gas supply of the second gas, which via the gas inlets 15b near the opening 11 are arranged to be inserted, to ensure, can be at the partition wall 4nahe the opening 11 at least one additional gas inlet 15c be arranged like this in 10 is shown. Of course, via the gas inlet 15c be fed to other than the second gas.

The 11A and 11B each show a plasma source 1 with two, with respect to the axis of the microwave antenna 12 opposite sides of the plasma source 1 arranged openings 11a and 11b , This plasma source 1 allows simultaneous processing of two substrates or substrate composites, each of which has a substrate or substrate structure near one of the openings 11a or 11b is arranged or moved past there. These are in the plasma source 1 through the partition wall 2 extending from the sides of the wall 10 that the openings 11a and 11b connect together, to the dielectric tube 13 extend, again two, functionally separate subspaces 16a and 16b educated. So with the help of a plasma source 1 Also, different treatments of the respective substrates or substrate composites are performed by, for example, different gases through the respective gas inlets 15aa and 15ab respectively. 15ba and 15bb be supplied. In doing so, with the help of near the partition wall 2 arranged gas inlets 15aa and 15ba Gases are supplied, which are optimal for plasma generation and have hardly any layer-separating or layer-removing components, while over close to the respective opening 11a respectively. 11b arranged gas inlets 15ab respectively. 15bb layer-separating or layer-removing gases are supplied. The partition wall 2 may or may not have openings, as shown in the 11A is shown. The magnetic devices 14 act simultaneously in both subspaces 16a and 16b into it.

In the 11B illustrated plasma source 1 has two plasmalines which, as already explained, each have a microwave antenna 12a respectively. 12b and a surrounding dielectric tube 13a respectively. 13b exhibit. The plasmalines are arranged so that the axes of the microwave antennas 12a and 12b on a straight line, the two openings 11a and 11b connects, lie. In the room of the plasma source 1 extends a first partition wall 2a from the wall 10 to the dielectric tube 13a while a second partition wall 2 B from the wall 10 to the dielectric tube 13b extends. In the case shown, the partition walls run 2a and 2 B parallel to each other, but this is not absolutely necessary. With the help of the partition walls 2a and 2 B the space becomes the plasma source 1 between the openings 11a and 11b in three subspaces 16a . 16b and 16c divided. The subspaces border on this 16a and 16b each on only one of the plasmalines and on only one of the openings 11a or 11b at. The subspace 16c is between the two plasmalines and the partition walls 2a and 2 B arranged and from the openings 11a and 11b completely separated. In the subspace 16a are gas inlets 15a arranged while in the subspace 16b gas inlets 15b are arranged. As shown, of these in turn first gas inlets close to the respective partition wall 2a respectively. 2 B be arranged and the supply of a plasma generation optimally suitable, but hardly layer-forming or layer-removing gas serve, while second gas inlets close to the respective opening 11a respectively. 11b the supply of a layer-forming or layer-removing gas serve. In the subspace 16c are other gas inlets 15c arranged, which serve to supply a gas suitable for plasma generation optimal. This can be done in the subspace 16c Under optimal conditions, a plasma can be generated, its excited gas particles or gas fragments then through the openings 21 in the partition walls 2a and 2 B in the respective subspace 16a respectively. 16b enter and be used there for the excitation of a layer-forming or layer-removing gas. At the same time is the subspace 16c largely protected from coating processes while in the subspaces 16a respectively. 16b optimal conditions can be set for the particular desired treatment of the substrate or the substrate dressings. Each plasmaline or each of the subspaces 16a and 16b may be a separate magnetic device 14a respectively. 14b be assigned, as in 11B is shown. Furthermore, in each of the subspaces 16a and 16b a protective lining 5 be arranged as with respect to the 8A and 8B has been described.

12 shows a plasma treatment device 100 in which several plasma sources according to the invention 1a to 1e are shown. Each of the plasma sources 1a to 1e is according to with reference to the 11A designed embodiment, but also according to the embodiment of 11B be educated. As already with respect to the 11A and 11B can be explained with such plasma sources 1a to 1e a plurality of substrates or substrate composites that are at different levels in the plasma processing apparatus 100 are arranged, edited. Thus, for example, the undersides of first substrates 200a generated by the plasma treatment device 100 are moved through on a first level, and at the same time the tops of second substrates 200b passing through the plasma treatment device on a second plane parallel to the first plane 100 be moved through, using the plasma sources 1a to 1e be treated. In the case shown, both substrates move 200a respectively. 200b in the same direction along the x -Axis through the plasma treatment device 100 but they can also move in opposite directions.

The plasma treatment device 100 has a plasma treatment chamber 110 on, in which the plasma sources 1a to 1e are arranged. Through openings 120a and 120b can the substrates 200a respectively. 200b in the Plasma processing chamber 110 be introduced or deployed. Inside the plasma treatment chamber 110 become the substrates 200a respectively. 200b with the help of a movement device 130 , which consists for example of several rotating shafts on which the substrates 200a respectively. 200b rest, transported. In the plasma treatment chamber 110 can continue to tempering 140 be arranged that the substrates 200a respectively. 200b heat or cool. Furthermore, at the plasma treatment chamber 110 one or more gas exhaust ports 150 in which, for example, one or more vacuum pumps and pressure regulating devices are present, with which within the plasma treatment chamber 110 a defined at least in terms of pressure atmosphere can be generated. Each of the plasma sources 1a to 1e For example, one or more additional gas pumping devices and / or gas separation devices may be associated with those within the plasma source 1a to 1e optimal conditions. Each of the plasma sources 1a to 1e may be one of the other plasma sources with respect to the supplied gases and gas flows as well as the plasma conditions which are dependent on pressure, microwave power applied and frequency of the microwave power 1a to 1e various plasma treatment of the substrates 200a respectively. 200b making use of the in the plasma sources 1a to 1e existing partition walls the substrates 200a and 200b also in every single one of the plasma sources 1a to 1e can be treated differently.

Components of the abovementioned possibilities for configuring the at least one partition wall and further components of the plasma source, such as, for example, partitions, protective coverings or gas-conducting devices, can also be combined with one another, as long as they do not exclude each other. In addition, the presented plasma source can be used with at least one partition wall in different types of plasma treatment apparatus and is not restricted to the case of a continuous-flow system shown here. Specified materials and sizes as well as the illustrated numbers and arrangements of individual components are only examples and do not represent an exhaustive enumeration or all possible embodiments. The optimal parameters for specific applications are available to a person skilled in the art with the aid of simulations, calculations or experimental arrangements without inventive step ,

LIST OF REFERENCE NUMBERS

1, 1a-1e

plasma source

10

Wall of the plasma source

11, 11a, 11b

Opening of the wall

111

Level of opening

12, 12a, 12b

microwave antenna

13, 13a, 13b

Dielectric pipe

14, 14a, 14b

magnetic device

15a-15d, 15aa-15bb

gas inlet

16a - 16c

First subspace

16aa - 16bc

Second subspace

17

bracket

18

connecting zone

19

Plasma generating zone

2, 2a-2d

Partition wall or parts thereof

21

Opening in dividing wall

3a, 3b

Electrically conductive cylinder segment

4

partition wall

5

protective lining

51

Opening in protective lining

52

Dielectric cylinder segment

6

gas guide

100

The plasma processing apparatus

110

Plasma processing chamber

120a, 120b

Openings for insertion and removal of a substrate

130

mover

140

tempering

150

Gasabpumpöffnung

200a, 200b

substratum

H

Distance between the plane of a partition wall and the axis of the microwave antenna

R

Radius of the dielectric tube

Claims (18)

A linear microwave plasma source (1), the plasma source (1) comprising a microwave antenna (12) surrounded by a dielectric tube (13), a wall (10) having at least one opening (11) and at least one gas inlet (15a-15d, 15aa Wherein the opening (11) is arranged on the side of the plasma source (1) facing a substrate surface to be treated by plasma treatment, and the plasma source (1) has at least one partition wall (2) which encloses the space inside the plasma source subdivided into at least two subspaces (16a, 16b), characterized in that the at least one partition wall (2) extends from opposite sides of the wall (10) to the dielectric tube (13). Linear microwave plasma source after Claim 1 characterized in that a first of the at least one partition wall (2) extends from two opposite sides of the wall (10) of the plasma source (1) with respect to the axis of the microwave antenna (12) to the dielectric tube and in one or more planes along the axis of the microwave antenna (12) extends to sides of the wall (10) along the axis of the microwave antenna (12) and thus the space of the plasma source (1) in two, along the direction of the axis of the microwave antenna (12) extending and parallel to the axis of the microwave antenna (12) arranged side by side subspaces (16a, 16b), each of which adjoins only a portion of the circumference of the dielectric tube (13), divided. Linear microwave plasma source after Claim 2 , characterized in that in at least one first with respect to the axis of the microwave antenna (12) juxtaposed subspaces (16a, 16b) at least a second partition wall (2) is arranged, extending from all sides of the wall (10) in the first subspace ( 16a) up to the first partition wall (2) along a plane transverse to the axis of the microwave antenna (12) and extending to the dielectric tube (13) and thus the first subspace (16a) of the plasma source (1) in two, along the direction of Axis of the microwave antenna (12) juxtaposed second subspaces (16aa, 16ab) divided. Linear microwave plasma source after Claim 1 characterized in that a first of the at least one partition wall (2) extends along a plane transverse to the axis of the microwave antenna (12) from the wall (10) of the plasma source (1) to the dielectric tube (13) and the dielectric tube (13) 13) completely surrounds radially and thus divides the space of the plasma source (1) into two partial spaces (16a, 16b) arranged side by side along the direction of the axis of the microwave antenna (12). Linear microwave plasma source after Claim 4 , characterized in that in at least a first along the direction of the axis of the microwave antenna (12) juxtaposed subspaces (16a, 16b) at least a second partition wall (2) is arranged, extending from two opposite sides of the wall (10) Plasma source (1) each to the dielectric tube and in one or more planes along the axis of the microwave antenna (12) to the first partition wall (2) and to one of the first partition wall (2) opposite side of the wall (10) or a third partition wall (2) which is parallel to the first partition wall (2) and is formed similar to this, and thus the first subspace (16a) of the plasma source (1) in two, parallel to the axis of the microwave antenna (12) extending second subspaces (16aa, 16ab), each of which adjoins only a part of the circumference of the dielectric tube (13), divided. Linear microwave plasma source after Claim 2 . 3 or 5 , characterized in that one of the planes in which one of the partial walls (2) extends along the axis of the microwave antenna (12) passes through the axis of the microwave antenna (12). Linear microwave plasma source after Claim 2 . 3 or 5 characterized in that one of the planes in which one of the partial walls (2) extends along the axis of the microwave antenna (12) is greater than 0 and less than the radius of the dielectric tube (13) to the axis of the microwave antenna (12). 12) is arranged. Linear microwave plasma source according to any one of the preceding claims, characterized in that at least one of the partition walls (2) has openings (21) which allow passage of gas from one of the partial spaces (16a, 16b) separated from one another by said partition wall (2) Partial space (16a, 16b) allow. Linear microwave plasma source according to one of the preceding claims, characterized in that the plasma source (1) further comprises at least one electrically conductive cylinder segment (3) extending along the surface of the dielectric tube (13) over at least part of the extension of the dielectric tube (13) along the axis of the microwave antenna (12). Linear microwave plasma source after Claim 9 , characterized in that one of the at least one electrically conductive Cylinder segment (3) is attached to one of the at least one partition wall (2). Linear microwave plasma source according to one of the preceding claims, characterized in that the plasma source (1) at least two rod-shaped microwave antennas (12a, 12b) which extend parallel to each other and each of a dielectric tube (13a, 13b) are surrounded in which at least one of the partition walls (2) is arranged between the dielectric tubes (13a, 13b) and, together with at least one partition wall (2) which adjoins the wall (10) of the plasma source (1), the space of the plasma source (1 ) divided into at least two subspaces. Linear microwave plasma source after Claim 11 characterized in that the plasma source (1) further comprises at least one partition wall (4) extending in a plane extending between two of the dielectric tubes (13a, 13b) and the plane of the partition wall (2) extending between the two dielectric pipes (13a, 13b) is arranged, cuts. Linear microwave plasma source according to one of the preceding claims, characterized in that the plasma source (1) has two openings (11a, 11b) on opposite sides of the wall (10) and at least one partition wall (2) extending from two opposite sides of the wall (10) connecting the two openings (11a, 11b) to each other, extending to the dielectric tube (13) and extending along the axis of the microwave antenna (12). Linear microwave plasma source after Claim 13 characterized in that said plasma source (1) comprises two rod-shaped microwave antennas (12a, 12b) extending parallel to each other and each surrounded by a dielectric tube (13a, 13b) and at least two partition walls (2a, 2b), wherein the microwave antennas (12a, 12b) are arranged one behind the other on a straight line connecting the two openings (11a, 11b), and in which there is one partition wall (2a, 2b) from two opposite sides of the wall (10) connecting two openings (11a, 11b) to each other, extending to one of the dielectric tubes (13a, 13b) and extending along the axes of the microwave antennas (12a, 12b) such that one of the openings is between the partition walls (2a, 2b) (11a, 11b) divided subspace (16c) of the plasma source (1) is arranged. Linear microwave plasma source according to one of the preceding claims, characterized in that the plasma source (1) further comprises a protective lining (5) on the opening (11) adjacent sides of the wall (10) of the plasma source (1). Linear microwave plasma source according to one of Claims 1 to 13 , characterized in that the plasma source (1) further comprises a gas guide device (6) extending from at least one side of the wall (10) of the plasma source (1) in the space of the plasma source (1) and at least over a portion of the extension the plasma source (1) extends along the axis of the microwave antenna (12) and the width of a gas exchange open junction zone (18) between a plasma generating zone (19) adjacent the dielectric tube (13) and the opening (11) therein Reduced portion of the expansion of the plasma source (1) relative to a plasma source without Gasleitvorrichtung. Linear microwave plasma source after Claim 16 , characterized in that the plasma source (1) comprises at least one partition wall (2) extending in a plane parallel to the opening (11) of the plasma source (1), and between the plane of the partition wall (2) and the gas guiding device (6 ) at least one gas inlet (15c) is arranged. Linear microwave plasma source according to one of the preceding claims, characterized in that in at least two of the subspaces (16a, 16b) in each case at least one gas inlet (15a-15d, 15aa-15bb) is arranged.

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