WO1999001886A1 - Plasma reactor with impingement flow for treating surfaces - Google Patents

Plasma reactor with impingement flow for treating surfaces Download PDF

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Publication number
WO1999001886A1
WO1999001886A1 PCT/DE1998/001780 DE9801780W WO9901886A1 WO 1999001886 A1 WO1999001886 A1 WO 1999001886A1 DE 9801780 W DE9801780 W DE 9801780W WO 9901886 A1 WO9901886 A1 WO 9901886A1
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WO
WIPO (PCT)
Prior art keywords
electrode
gas
ƒ
plasma
da
Prior art date
Application number
PCT/DE1998/001780
Other languages
German (de)
French (fr)
Inventor
Bentsian Elkine
Joachim Mayer
Christian Oehr
Original Assignee
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
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Filing date
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Priority to DE1997127857 priority Critical patent/DE19727857C1/en
Priority to DE19727857.4 priority
Application filed by Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. filed Critical Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Publication of WO1999001886A1 publication Critical patent/WO1999001886A1/en

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Abstract

The invention relates to a plasma reactor, comprising a reactor gas inlet (7), a gas distribution chamber (17), a plasma treatment chamber (26) said plasma treatment chamber being delimited by a first electrode (13) and a second electrode (4) located opposite said first electrode, a gas extraction chamber (28, 29), and a reactor gas outlet (1). The first electrode (13) separates the gas distribution chamber (17) from the plasma treatment chamber (26), and is provided with gas inlets (18) essentially spread out over its surface, gas being able to pass from the gas distribution chamber (17) into the plasma treatment chamber (26) through said gas inlets (18). The inventive plasma reactor is characterised in that the first electrode also separates the gas extraction chamber (28, 29) from the plasma treatment chamber (26) and is provided with gas outlets (19) essentially spread out over its surface, gas being able to pass out of the plasma treatment chamber (26) and into the gas extraction chamber (28, 29) through said gas outlets (19). The invention also relates to a method for treating substrates with a glow discharge low temperature plasma. According to the inventive method, plasma is excited in a plasma treatment chamber and the excited plasma impinges on the substrate essentially vertically thereto, said substrate being located in the same chamber. The method is characterised in that the gas is extracted in the opposite direction to that in which it impinges on the substrate, also essentially vertically to the substrate.

Description

Plasma reactor impingement surface treatment

The present invention relates to a plasma reactor for treating flat substrates or those having an uneven surface contour, the gas guide is improved, and a method for plasma treatment of such substrates.

Plasmas are partially or completely ionized gases and vapors, the particles also include a large number of excited states. They can be created by electromagnetic fields and maintained.

Present in the plasma ions, electrons, molecules activate in electronically excited states and the presence of radiation and / or etch surfaces or initiate on the surface of substrates in many (especially organic) substances polymerizations in the gas phase and layer formation.

Also usually not very reactive compounds can stimulate chemical reactions in plasmas.

Significant opportunities for plasma-substrate interaction are summarized in the following table:

material

Organic Inorganic procedure removal cleaning, etching for example degreasing

Modification activation, for example, plasma oxidation, for example hydrophilizing build plasma plasma CVD

Plasma treatments are performed under vacuum in special reactors. It is most important that the substrate is treated equally.

The most important requirement for uniform treatment (particularly for the layer deposition) is to be treated for all (or coated) surfaces with fine support uniform performance and Stof. This depends on the distribution of electric fields and gas flows. Approximately uniform distribution of electric fields is called in. Parallel plate reactor reaches [see HV Boenig, Fundamentals of Plasma Chemistry and Plasma Technology, Technomic Publishing AG, Basel & Lancaster, 1988]. Therefore, the reactors of this type find particularly proliferation. The reaction gases are, however, led parallel to the substrate and reacted at the chemical reactions. These reactions can lead (by fragmentation of starting molecules for example) both on substance depletion (eg, depositions) and to Molzahlerhöhung. Therefore, the gas composition at the gas inlet is different from the gas outlet. This leads to uneven treatment. By increasing the gas flow can be returned to insulate this phenomenon, but at the price of a lower yield and possibly a deterioration in the film quality.

Moreover arise in such systems problems on scaling of processes: with larger surface to be coated one is forced to increase the distance between the electrodes and in particular the gas flow disproportionately to acceptable

to achieve uniformity. but that is changing the relationships between the parameters of the process, and an optimum can often be found only on the basis of a complex series of tests on the scaled-up system again. The results that you get on a smaller laboratory system can be used only conditionally.

With the intention of achieving more uniform coatings, a so-called was. "Radial flow reactor" [AR Reinberg, Ann. Rev. Mater. Sci., V.9, S.341-372 (1979)] developed. In this reactor, the process gas is either supplied through an opening in the center of an electrode or aspirated. The gas flow is radially symmetrical.

However, the maximum substrate size for an even coating must be much less than the reactor dimensions are (for example, 4-inch wafer in a 22-inch reactor). Also, the exact adjustment of the gas flow and the RF power is necessary for a uniform coating, and the system is not readily scalable to.

In a still further modification which is described in Japanese Patent No. JP 5902375, a "showerhead electrode" is used, that is, the gas inlet is distributed over the surface of the electrode. In a derartigem system is implemented partially responsible for the plasma interaction (eg Deposition) favorable impingement. In addition, the undesirable concentration in the gas phase are somewhat reduced, but not completely eliminated. The object of the invention is to provide a plant for the treatment of flat substrates or those having an uneven surface contour in a glow discharge low-temperature plasma and to a method for treating sheetlike or three-dimensionally shaped substrates, which ensures an increased uniformity of the gas treatment.

This object is achieved by a plasma electrode reactor according to claim 1 and a method according to claim 20. Particularly preferred are reactors according to claim 3, having a modular structure.

Specific embodiments of the reactor are shown in Figures 1 to 12, wherein:

1 shows an inventive embodiment with a modular structure in the side

Section shows

Figure 2 shows the same embodiment, but in the section planes A and B of Figure 1 shows the figures 3a and 3b respectively show embodiments in which the gas with the aid of tubes can also be routed to a substrate with an uneven surface contour at a constant distance,

Figure 4 also shows a modular configuration in lateral cross-section, in which the top electrode comprises a frame having parallel fixed

Gas distribution (-zuführungs-) comprises devices which longitudinally over the

Electrode extend,

Figure 5 shows the same arrangement from above in two different sectional planes E and

F shows - Figure 6 shows a detail of this embodiment, from which one of the fastening

can detect gas supply devices as part of the electrode

Figure 7 shows a gas supply apparatus of Figure 5, in lateral section,

8 shows the same device from above in two different cutting heights G, H shows - Figure 9, the same device in lateral section IJ shows

Figure 10 shows the embodiment as in Figure 4, but with the waveguide and antennas for feeding microwaves are additionally provided in the plasma treatment chamber,

Figure 11 shows the embodiment of Figure 10 from above in two different section planes K, L,

Figure 12 shows a device with also a modular design, in lateral section, wherein the upper electrode as in Figure 4 includes a frame having parallel arranged gas supply devices, however, are designed in this case in the form of elongated tubes having executed for the plasma treatment chamber outlet,

Figure 13 shows the device of Figure 12 from above in the cutting height X, Y, and Figure 14 represents an embodiment similar to that shown in Figure 12, but in which path the exhaust ports of the elongate tube of the plasma processing chamber and are directed to reflectors, which the distribute gas diffused toward the substrate.

The plasma electrode reactor according to the invention comprises a reactor gas inlet through which the gas is introduced into the reactor. Subsequently the gas passes without disabilities such constrictions or the like into a gas distribution chamber, so that it is distributed constant pressure there. The gas distribution chamber just as the Gasabsaugraum separated by a first electrode of the plasma processing chamber. In the latter, the gas is excited into a plasma, after which it then impinges plasma on a substrate and this changed. The substrate is disposed on one of the first electrode opposing the counter electrode. For example, it may be supported (for example, if, as is often the case, this electrode extends horizontally, in particular when it is impermeable and the bottom of the plasma electrodes reactor forms). Of course, the substrate may also be attached to or in the vicinity of said second electrode so that the second electrode does not need to form the bottom of the installation force. However, this is preferred.

So that the gas substantially perpendicular, so as to impinge "impingement" on the substrate, the first electrode, through which the gas enters gas inlets must substantially distributed over its surface have. These may be symmetrically distributed or arranged in rows or the like; the geometry of the arrangement is not important. , Is required, but that the number of gas inlets is sufficient so that the substantially perpendicular passing gas which is deflected only slightly, and uniformly impinges on the entire surface of the substrate in substantially the same amount. It is particularly advantageous is when the intake cross-sections of the individual

Gas inlets are kept to a minimum. Of course, the number of gas inlets will be the greater, the smaller the inlet cross-sections. the inlet cross-sections of the individual gas inlets are preferably no greater than about 15.5 mm ^, more preferably not greater than about 7 mm2, and most preferably not greater than about 1 mm ^. The geometry of the gas inlets is not important here, for example, they can be round or square or else be formed in the form of elongated slots. In the latter case the inlet cross-section is usually somewhat greater than in the two former cases. Preferably, the characteristic distance between the inlet and outlet openings is less than the distance between the gas inlets and the substrate to avoid to the substrate surface parallel flows.

After the gas is impinged with its changing the substrate components on this, it should preferably not be withdrawn parallel to the substrate in order to avoid that a concentration gradient along the substrate surface. Therefore, the invention provides that the gas through gas outlets in the same first electrode can emerge again, flows through a Gasabsaugraum and then exits the reactor. The gas outlets and the Gasabsaugraum must of course be physically separated from the gas distribution chamber and the gas inlets. This principle can be in a variety of

Configurations vary, which are particularly explained with reference to individual examples. the gas is then drawn off via a reactor outlet, for example by means of a vacuum pump from the Gasabsaugraum.

The principle according to the invention, namely, gas inlet and gas outlet to effect respectively by the substrate to be treated opposite electrode, allows an extremely simple construction of the entire reactor. Namely, it is not necessary (although of course not excluded), that the components such as electrodes and the like are arranged in an outer reactor chamber, each outlet communicates with a gas inlet and with the environment. Rather, it is sufficient that the required spaces are formed for treating the substrate by the necessarily existing anyway components themselves. For example, the plasma processing chamber by the first electrode (which is equipped with the above-described gas distribution systems), which are formed lying opposite second electrode, which may carry the substrate, and an intermediate frame. When these ingredients are separated by insulating gaskets from each other and connected to each other, one obtains a very simple modular construction. In a preferred, because very simple way it is then possible to form necessary for the gas supply and for the removal of the gas space characterized in that one of these spaces within the first electrode or in grooves or other recesses in pipes or other constructs is disposed inside this electrode while the other of the two spaces is formed on the side facing away from the plasma processing chamber of the electrode. To separate this last compartment mentioned from the external environment, a lid can be used in a simple manner, which has a recess in its interior, so that such a gas space is formed when sealing the lid is placed on the first electrode, via a reactor gas inlet may be or outlet connected to a vacuum pump or a gas supply device or the like. The other of the two gas chambers may communicate with the atmosphere through a gas inlet or outlet in connection which is guided through the frame of the first electrode. If the four components: (1) second electrode (eg, in the form of a massive Terminating electrode plate), (2) insulating intermediate frame, (3) first, provided with the gas passage openings electrode (also with a fixed outer frame) and (4) cover in plan view have the same external dimensions, for example in the plan view are rectangular or square, they can be used in a simple manner as modular components which are connected to each other by O-rings made of rubber or the like, or other sealing parts. In a simple way, one of these modular parts to other parts can be replaced, where appropriate, so that a high variability of embodiments of the plasma electrode reactor of the invention is possible with a small number of components.

The intermediate frame located between the two electrodes may be formed of electrically insulating material. However, sometimes it is recommended a metal component, because the selection is relatively few in vacuum and plasma-compatible electrically insulating materials. Plastics in the plasma processing chamber should be avoided if possible because of the high outgassing rate and the degradation under the plasma conditions. especially glass and ceramics are therefore suitable as insulating materials, however, are often brittle. Your editing options are usually limited, and the processing is often expensive. Is therefore used instead of metal or other conductive material, but an insulator should be arranged on the side facing the plasma treatment chamber side, so that the uniformity of the electric field is not impaired.

The invention will now be explained with reference to individual embodiments.

Figures 1 and 2 show a reactor having a lower electrode 4, on which the substrate to be treated 5 is launched or otherwise secured, the intermediate frame 6 of an electrically insulating material, for example glass or ceramic, and the upper electrode 13, in which the gas distribution system is installed.

the lid 25 is applied to the upper electrode 13 having a recess within a frame having approximately the same width as the frame of the intermediate frame 6, so that between the lid and the electrode, a cavity 29 is formed. On the electrode 13, a cover plate 2 is on. The working gas enters through the reactor-gas inlet 7 and is distributed evenly throughout the gas chamber 17 which forms grooves in the electrode body 13, which are separated by the cover plate 2 by the suction chamber 29th Subsequently, it is smoothly guided through the outlet passages 18 into the plasma treatment chamber 26th A uniform distribution exists, for example, when the total cross section of the passages of a groove is substantially less than the groove cross section and therefore the pressure drop occurs only in the passages.

The working gas exits the apertures 18 in the plasma processing chamber 26 and impinges substantially perpendicularly on to the substrate. 5 If the openings 18 are small enough and the working pressure is properly selected, the gas dynamic effects ( "impingement"), for example, that is, on the substrate, lead to an excellent separation of Plasmapolymerisationsprodukten on the opposite side. This is a desirable effect. However, the diameter is usually not be arbitrarily be reduced due to production reasons. Openings under 0.5 to 1 mm, for example, can hardly be mechanically drilling, laser drilling is indeed possible and can be used herein, but relatively expensive. (A baffle flow effect is then achieved, for example, when the distance between the gas outlet openings 18 at a distance of about 1.5 cm [in an arrangement in an approximately square pattern, see Figure 2] and the diameter of the openings is about 0.8 mm in a distance between the electrode 4 and the substrate 5 be from about 4 cm, wherein the gas pressure during the treatment in the plasma chamber at 100 Pa and the gas at 0.5 sccm (standard cubic centimeter) per inlet opening flows).

For evacuation of the reactor and the suction of the reaction products are provided passages 19 in the electrode body 13 and openings 20 in the cover plate. 2 These passages are like the gas inlet passages 18 distributed over the electrode surface. Subsequently, the gas flow through the suction chamber 29 is in the lid 25 to the reactor gas outlet 1, which for example is connected to a vacuum pump.

The seal between the reactor components 4, 6, 13 and 25 is effected by O-rings 3 made of rubber.

Figures 3a and 3b illustrate two variants of a further embodiment of the reactor according to the invention. The construction of the reactor of Figure 3a is similar to that of Figures 1 and 2. The gas connection 7 is used as a reactor-gas inlet, and the electrode body 13 has a different construction. The working gas is moved from the space 17 through tubes 8 close to the substrate surface. the above, it applies to the diameter of the tube: for a uniform gas distribution in the plasma processing chamber, the pressure drop should take place only at the passage of the gas through the tube. If the extraction of the unreacted gas through the openings 19 in the corresponding to the electrode 13 cover plate 27 (also, the tubes are in the illustration of FIG concentrically performed, but which is not necessarily the case must be in such an arrangement) further through the cavity 28 and through the suction port 1 in the electrode body 13. the advantage of this construction that allows the length of the various tubes made variable. This allows the gas supply to substrates 5, which are not flat, but an uneven surface contour having (as schematically shown in the figure), are introduced. In one embodiment, the tubes are made of an electrically insulating material. The distribution of the electric fields is not significantly changed in this case compared to a parallel plate reactor. In another embodiment, the tubes are made of a conductive material such as metal. This leads to a considerable enlargement of the electrode surface, and additionally also into a hollow cathode effect, said plasma efficiency can be significantly improved.

Figure 3b shows a specific embodiment of the principle shown in figure 3a, in which the tubes are held reversibly movable along its longitudinal axis. For this purpose rests on the electrode 13 a pressure plate 42 which can be pressed 13 via screws 43 in the direction of electrode or dissolved. To the tubes are O-rings arranged of a compressible material 41, for example of an elastomer (rubber) around. When the screws are loosened 43, the O-rings 41 are so loosely around the tube that they can slide along its longitudinal axis. If the electrode is placed 13 in this state, while the already - uneven - substrate 5 is located on the lower electrode 4, the tubes slide automatically in a suitable position. The same applies to the insertion of the substrate if this has flowing contours. Subsequently, the pressure plate 42 can be tightened by means of screws. The thereby acting on the O-rings 41 contact pressure changes its shape such that it now fix the tubes in the resulting position. Simultaneously, the gas seal is ensured to the gas space 17 through the O-rings. 44 with the openings for the tubes in the pressure plate are designated, the other reference numerals correspond to those for Figures 3a match. The remaining components of this plasma reactor are omitted in Figure 3b.

The embodiment of Figures 4 and 5 differs from the embodiment according to Figures 1 and 2 in the electrode structure and in the gas guide. A cover 25 is again applied to the upper electrode 13 such that a cavity is formed 29th The electrode 13 consists of a frame 16, mounted on the gas distributor 15 °. Such a gas distributor is illustrated in Figures 7 to 9. it consists of a body 10 and a cover plate 11 which are bonded together or connected in any other way. Due to the deeper groove 30 the working gas is evenly distributed over the gas outlet slots 12 formed between a recess in the body 10 and the cover plate. 11 The width of the gaps 12 may be maintained very accurately by the webs 31st The ribs 31 may be integral parts of the body 11 or 10 of the panels, but they may also be glued or otherwise secured. In the gas distributor 15, the gas is introduced through a pipe connection 9, which is shown in Fig. 6.

The gas distributor to be mounted on the frame 16 and fixed by screws fourteenth The pipe joint 9 ends in the gas passage 24 (a blind hole), which is connected to the gas inlet. 7

The evacuation (exhaust) of the gas is carried out through the interstices between the gas distributors 15, further through the cavity 29 in the lid 25 and the terminal. 1

The spaces between the gas distributors can lead to Hohlkatodeneffekt which can in many cases increase the plasma efficiency. However, if the resulting redistribution of the plasma is undesirable, the effect can, if necessary, by attaching a space object, such as a metal mesh 32 can be suppressed, as viewed from the plasma treatment chamber disposed in front of the electrode 13 and is electrically connected thereto and so makes a flat electrode. This article may be made of metal or any material as long as it is conductive or is coated conductive. Instead of a sieve, a perforated plate, or other configuration with a plurality of apertures is possible.

The advantage of this system is that the gas exit slots 12, through which the gas enters the plasma processing chamber 16 can be made very narrow. So that in the first embodiment (Fig. 1 and 2) mentioned gas dynamic effects in a particularly effective manner can be obtained. Moreover, this construction is very simple and economical to manufacture, since a plurality of gas inlets by connecting only two parts, the body 10 and the cover plate 11 can be effected. Drilling a plurality of small holes is not necessary.

Furthermore, this structure differs from the embodiment of Figures 1 and 2, characterized in that the intermediate frame 6 is made of metal. In order to ensure the electrical insulation between the parts, therefore, in addition to the O-rings 3 and spacers 33 are used made of plastic. Since the metallic walls of the intermediate frame can play the role of an additional electrode, in particular when the system is operated under high-frequency, and thus can affect the uniformity of the distribution of the electric field, are washers 23 of an insulator, for example of glass, provided that the shielding metallic walls of the plasma processing chamber.

Figures 10 and 11 illustrate a modification of the embodiment of Figures 4 and 5. The gas guide is the same. The power feed is here additionally by

Microwaves which are fed by coaxial (or Waveguide) passages 21, which are sealed by the lid 25 and further introduced through the spaces between the gas distributors 15 into the plasma treatment chamber 26th They may be radiated by antennas 22 in the space 26th The plasma efficiency is substantially increased by the combined action of microwave and radio frequency energy, which is desirable in some cases.

Figures 12 and 13 show an embodiment in which the gas supply and distribution are realized similar to Figure 4 and 5. FIG. The gas distributor however, tubes 34 having openings 35 herein. of course, applies to the size of the openings of the pipes the same thing that was said for the openings of the gas inlets into the plasma processing chamber before. The use of the tubes 34 in place of the gas manifold 15 has the advantage of being particularly simple construction.

Optionally, in such an embodiment of the plasma treatment chamber 26 from the

Suction chamber 29 are additionally separated in the cover 25 by a metal grid or screen. 39 In this case, the pipes made of conductive or non-conductive material but also can be designed.

Figure 14 shows an embodiment which is very similar to that of Figures 12 and 13. FIG. Here, however, the tubes are arranged so that their openings do not face the plasma processing chamber, but in the opposite direction. The exiting gas strikes here on reflectors 40 which reflect the diffuse gas in the direction of the substrate. Although the gas flow is somewhat diffuse, in this embodiment, produces essentially no to the substrate parallel gas flows.

The small diameter of the gas outlet openings 18, 35 and columns 12 performs, as already explained, to a side facing the substrate impingement, which is advantageous in that it (better utilization of the chemicals and higher treat rate, in most cases, for example, deposition or etching ) permits; is also ensured by the fact that the pressure drop takes place only in the discharge openings and the gas flows from all these openings are the same. However, such impingement may not be optimal for all treatments. They may optionally namely lead to a treatment pattern on the substrate, corresponding to the distribution of these openings. To avoid this, the flow of gas in special cases, as shown in Figure 14 is directed only in the opposite direction and then diffusely reflected by the reflectors 40 gas towards the substrate.

Legend to the figures

1 reactor gas outlet

2 cover plate

3 O-ring

4 counter electrode

5 substrate

6 intermediate frame

7 reactor gas inlet

8 gas inlet tube

9 Pipe connection

10 Gas distributor body

11 gap inlet cover plate

12 Gas outlet gap

13 gas-permeable first electrode

14 screw

15 gas distributor

16 under the first electrode

17 groove (gas passage)

Gas inlet 18 fine holes

19 suction passages

20 slots

21 MW bushing (coaxial or waveguide)

22 AM antenna

23 insulator

24 Gas channel (hole)

25 cover

26 plasma space

27 cover

28 cavity in the electrode body

29 cavity in the electrode cover

30 groove

31 spacer (bridge)

32 metal screen

33 electrically insulating spacer

34-tube gas distributor

35 gas outlet

36 gas inlet collector

38 electrode frame

39 metal grid

40 Gas Reflector

41 O-ring

42 pressure plate

43 screw

44 openings in the pressure plate

Claims

Anspr├╝che:
1. A plasma reactor comprising a reactor Gaseinlaß (7), a gas distribution chamber (17), - a plasma processing chamber (26) defined by a first electrode (13) and a gegenüberliegenden second electrode (4) is limited, a Gasabsaugraum (28,29), and a reactor Gasauslaß (1), wherein the first electrode (13) and connects the gas distribution chamber (17) from the plasma processing chamber (26) distributed with their Fläche substantially über Gaseinlässen (18), through which the gas from the gas distribution chamber (17) into the plasma processing chamber can strömen (26) is provided, characterized in that the first electrode and the daß Gasabsaugraum (28,29) of the plasma processing chamber is separated and substantially distributed über their Fläche Gasauslässen (19) through which the gas from the
is can str├╢men plasma processing chamber (26) in the Gasabsaugraum (29) provided.
2. Plasma reactor as claimed in claim 1, characterized in that the daß Fläche of the individual Einlaßquerschnitte
Gaseinlässe (18) does not größer than about 2.5 mm is ^ not größer than about 16 mm ^, preferably not größer than about 4 mm ^ and very particularly preferred.
3. A plasma reactor, in particular according to one of the preceding Anspr├╝che comprising a Abschlu├ƒ electrode plate (4) of conductive material, an intermediate frame (6), one with a Gaseinla├ƒsystem (7,17,18) or Gasausla├ ƒsystem (1,28,29) as well as with separate from this system Durchtritts├╢ffnungen f├╝r the gas inlet (8,18) or the gas outlet (19) provided with electrode (13) of conductive material and a lid (25) with a reactor Gaseinla├ƒ (7) or -Gasausla├ƒ (1) is provided, wherein the Abschlu├ƒ electrode (4), the intermediate frame (6) and the electrode (13) to form the plasma processing chamber (26) are sealed together and the lid has a recess having (25) on a frame (16) of the electrode (13) is so placed sealingly da├ƒ between the cover (25) and electrode plate (13) is a Gasabsaugraum (29) or a gas distribution chamber (17) is formed.
4. A plasma reactor according to claim 3, characterized in that the lid daß (25) includes a reactor Gasauslaß (1) and between it and the electrode (13) a Gasabsaugraum (29) is formed.
5 in the plasma reactor according to claim 3 or 4, characterized, daß the bottom plate (4), the intermediate frame (6), the plate (13) and the cover (25) are joined by O-rings sealingly together.
6. The plasma reactor of claim 4 or 5, characterized in that daß the first electrode (13) for Gasabsaugraum (29) towards a Durchtrittsöffnungen (20) having the cover plate (2) provided is that in the electrode (13 ) existing grooves (17) (from Gasabsaugraum 29) separates and their Durchtrittsöffnungen (20) communicate (with the Gasauslässen 19) of the first electrode (13) such gas from the plasma processing chamber (26) by daß the
Gasauslässe (19) and the Öffnungen (20) in the strömen Gasabsaugraum (29) and über the reactor Gasauslaß (1) can be extracted.
7. Plasma reactor according to one of Ansprüche 4 to 6, characterized in that daß the first electrode (13) has a through their
Frame (16) laterally extending Gaseinlaß reactor (7), substantially the entire inner über Fläche the plate parallel extending grooves (17) connected to the reactor Gaseinlaß (7) are connected, having and a plurality of grooves disposed within the Gasdurchtrittsöffnungen (18) for introducing the gas into the plasma processing chamber (26) wherein the diameter of the
is Gasdurchtritts├╢ffnungen (18) is substantially smaller than the cross section of the grooves (17).
8. Plasma reactor according to one of Ansprüche 1 to 3, wherein the Gaseinlässe (18) are formed as Röhrchen (8) extending through the first electrode (13) into the
Plasma processing chamber (26) into extend.
9. The plasma reactor according to claim 8, characterized in that the daß Röhrchen (8) to different extents in the plasma treatment chamber (26) protrude, so the distance between the daß
Röhrchenenden resting or Oberfläche one on the second electrode (4) applied substrate (5) can be constant even if the substrate has a ungleichmäßige Oberflächenkontur.
10. The plasma reactor according to claim 8 9, characterized by the that Röhrchen (8) daß of an electrically insulating material or of a conductive material are formed.
11. Plasma reactor according to one of Ansprüche 8 to 10, characterized in that daß between cover (25) and first electrode (13) is a gas distribution chamber (17) from which the über Röhrchen ( 8) gas may enter the plasma processing chamber (26).
12. A plasma reactor according to claim 11, characterized in that the Einlaßquerschnitt the Röhrchen daß not größer than about 16 mm ^ preferably not größer than about 4 mm is ^, and most preferably not größer than about 2.5 mm ^.
13. Plasma reactor according to one of Anspr├╝che 11 or 12, characterized in that da├ƒ the first electrode (13) for plasma treatment chamber with a Gasausl├ñssen (19) provided with cover plate (27) umfa├ƒt such da├ ƒ pointing between the gas distribution chamber (17) part of the first electrode (13) and the cover plate (27) a
Gasabsaugraum (28) is formed, which is arranged with a laterally in the first electrode (13) Gasauslaß reactor (1) communicates.
14. Plasma reactor according to one of Ansprüche 4 or 5, characterized in that daß the first electrode (13) has a through their
Frame (16) laterally extending Gaseinlaß reactor (7) and mounted on the frame substantially parallel to each gas distribution means (15) umfaßt which communicate with the reactor Gaseinlaß (7).
15. Plasma reactor according to one of the preceding Ansprüche, characterized daß coaxial or hollow conductor through the first electrode (13) in the plasma treatment chamber (26) are geführt through which microwave energy into the plasma processing chamber (26) can be introduced.
16. Plasma reactor according to one of the preceding Ansprüche, characterized daß arranged a shallow, with a plurality of Öffnungen Being Trapped element (32) of conductive material and between the first electrode (13) and the plasma processing chamber (26) is conductively connected to the electrode (13).
17. A method for treating substrates with a glow discharge low-temperature plasma, wherein plasma is excited in a plasma processing chamber and the excited plasma substantially perpendicularly incident on the left in the same chamber substrate, characterized in that daß the gas suction in the opposite direction to act on the substrate is also carried out with gas substantially perpendicular to the substrate.
18. The method according to claim 17, characterized in that the gas through daß Öffnungen in the plasma treatment chamber is introduced, which are arranged of the substrate Oberfläche gegenüber distributed substantially gleichmäßig and a cross-section of no more than about 16 mm ^, preferably of no more than about 4 mm2, and very particularly of not more than 2.5 mm ^.
* * *
PCT/DE1998/001780 1997-06-30 1998-06-29 Plasma reactor with impingement flow for treating surfaces WO1999001886A1 (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7883602B2 (en) 2003-04-28 2011-02-08 Air Products And Chemicals, Inc. Electrode assembly for the removal of surface oxides by electron attachment
US7897029B2 (en) 2008-03-04 2011-03-01 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment
US8361340B2 (en) 2003-04-28 2013-01-29 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment
CN103426710A (en) * 2012-05-18 2013-12-04 中国地质大学(北京) Plasma etching device with even gas supply function and gas supply device thereof
CN103594318A (en) * 2013-11-27 2014-02-19 苏州市奥普斯等离子体科技有限公司 Plasma circular processing device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10358329B4 (en) * 2003-12-12 2007-08-02 R3T Gmbh Rapid Reactive Radicals Technology An apparatus for generating excited and / or ionized particles in a plasma and method for generating ionized particles
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4209357A (en) * 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
EP0101286A1 (en) * 1982-08-13 1984-02-22 Energy Conversion Devices, Inc. Grooved gas gate
JPS60128612A (en) * 1983-12-15 1985-07-09 Ricoh Co Ltd Plasma cvd apparatus
EP0452745A1 (en) * 1990-04-12 1991-10-23 Balzers Aktiengesellschaft Process for reactive surface treatment
US5614026A (en) * 1996-03-29 1997-03-25 Lam Research Corporation Showerhead for uniform distribution of process gas

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4507539A (en) * 1982-01-06 1985-03-26 Sando Iron Works Co., Ltd. Method for continuous treatment of a cloth with the use of low-temperature plasma and an apparatus therefor
JPS592375A (en) * 1982-06-28 1984-01-07 Fujitsu Ltd Semiconductor device
DE3312307C2 (en) * 1983-04-06 1991-02-28 Sando Iron Works Co., Ltd., Wakayama, Jp
JP3242166B2 (en) * 1992-11-19 2001-12-25 東京エレクトロン株式会社 Etching apparatus
CA2126731A1 (en) * 1993-07-12 1995-01-13 Frank Jansen Hollow cathode array and method of cleaning sheet stock therewith
JP3257741B2 (en) * 1994-03-03 2002-02-18 東京エレクトロン株式会社 Plasma etching apparatus and method
JPH09180897A (en) * 1995-12-12 1997-07-11 Applied Materials Inc Gas supply device for a high-density plasma reactor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4209357A (en) * 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
EP0101286A1 (en) * 1982-08-13 1984-02-22 Energy Conversion Devices, Inc. Grooved gas gate
JPS60128612A (en) * 1983-12-15 1985-07-09 Ricoh Co Ltd Plasma cvd apparatus
EP0452745A1 (en) * 1990-04-12 1991-10-23 Balzers Aktiengesellschaft Process for reactive surface treatment
US5614026A (en) * 1996-03-29 1997-03-25 Lam Research Corporation Showerhead for uniform distribution of process gas

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 009, no. 288 (E - 358) 15 November 1985 (1985-11-15) *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7883602B2 (en) 2003-04-28 2011-02-08 Air Products And Chemicals, Inc. Electrode assembly for the removal of surface oxides by electron attachment
US8119016B2 (en) 2003-04-28 2012-02-21 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment for wafer bumping applications
US8361340B2 (en) 2003-04-28 2013-01-29 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment
US8617352B2 (en) 2003-04-28 2013-12-31 Air Products And Chemicals, Inc. Electrode assembly for the removal of surface oxides by electron attachment
US7897029B2 (en) 2008-03-04 2011-03-01 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment
CN103426710A (en) * 2012-05-18 2013-12-04 中国地质大学(北京) Plasma etching device with even gas supply function and gas supply device thereof
CN103594318A (en) * 2013-11-27 2014-02-19 苏州市奥普斯等离子体科技有限公司 Plasma circular processing device
CN103594318B (en) * 2013-11-27 2015-09-16 苏州市奥普斯等离子体科技有限公司 A plasma processing apparatus cycle

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