TW384627B - Plasma reactor having impact flow for the surface treatment - Google Patents

Plasma reactor having impact flow for the surface treatment Download PDF

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Publication number
TW384627B
TW384627B TW87110618A TW87110618A TW384627B TW 384627 B TW384627 B TW 384627B TW 87110618 A TW87110618 A TW 87110618A TW 87110618 A TW87110618 A TW 87110618A TW 384627 B TW384627 B TW 384627B
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Taiwan
Prior art keywords
gas
electrode
plasma
chamber
reactor
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TW87110618A
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Chinese (zh)
Inventor
Joachim Mayer
Bentsian Elkine
Christian Oehr
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Fraunhofer Ges Forschung
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Publication of TW384627B publication Critical patent/TW384627B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)

Abstract

A plasma reactor having a reactor gas inlet (7), a gas dispensing chamber (17), a plasma processing chamber (26)[being outlined by a first electrode (13) and an opposing second electrode (4)], a gas suction chamber (28)(29) and a reaction chamber gas outlet (1), where the first electrode (13) separates the gas dispensing chamber (17) from the plasma processing chamber (26) and, disposed with gas inlets (18) roughly distributed in the area range, allowing gas flow from the plasma processing chamber (26) into the gas suction chamber (29) through those gas outlets (19). Besides, it concerns a method electrophoresis discharge low-temperature plasma for processing of substrata, where the plasma is excited in the plasma processing chamber and the excited plasma is roughly applied in vertical position to the substrate in the plasma processing chamber. The gas suction effect is in the opposite direction with the impact substrata such that the gas is vertically sucked from the substrata in the same way.

Description

五、發明説明( A7 B7 .本發明關於一種用於處理平坦基質(Substrat)或具不 平坦表面輪廓的基質的電漿反應器,其氣體導引作用較佳 ,並關於這種基質的電漿處理方法。 電漿爲部分或完全離子化的氣體與蒸氣,此外,其粒 子包含許多種激發狀態。它們可用電磁場產生及維持。 在電漿中存在的離子、電子、圼電子激發狀態的分子 以及輻射線將表面活化及/或蝕刻或在許多物質(特別是 有機物)在氣相中造成聚合作用以及在基質表面形成聚合 物覆層。 即使是一般不大具反應性的化合物也可在電漿中激發 化學反應。 電漿-基質交互作用的重要的可能方式係在以要綱要 中一覽 料 經濟部中央標準局負工消费合作社印裝 材 有機 淸冼(働晒旨) 澈匕c働嚇性) 電漿處理係在真空中在特殊反應器中進行。在此最重 的是,基質要均勻地處理。 均勻處理(特別是在薄膜沈積時)的前提爲對於所有 要處理(或要施覆)的面積均勻地將功率與物質加入。這 種加入作用依電場及氣流的分佈而定。 電場近乎均勻的分佈係在所謂的平行板反應器中達成 改注 亥《虫 讎D: mm ---------^ %裝------訂------ (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 經濟部中央橾準局負工消费合作社印裝 A7 B7 五、發明説明(>) (見 Η· V. Boenig,Fundamentals of Plasma Chemistry and Plasma Technology,Technomic 出版公司,Lancaster! & Basel, 1988)。因此這類反應器特別廣泛應用。但反應氣體係平 行於基質導進而在化學反應時作用。這種作用會使物質減 少(例如由於沈積)及摩爾數提高〔例如由於起始分子碎 裂所造成)。因此在氣體入口的氣體組成與氣體出口不同 。這點導致處理不均勻。將氣流提高可將這種現象減少, 但付出的代價爲:產率較小且可能使覆層品質變差》 此外,在這種設備在程序規模放大(Anfskalierung)時 的問題爲:當要施覆的表面較大時,必須將電極之間的距 離及〔特別是)氣流作超比例的提高,以達到可接受的均 勻度。但這點改變了程序的參數之間的比例,而要找出新 的最佳條件只得在此規模放大的設備上作一系列繁複試驗 才能再找到,在較小實驗設備上所得的結果只能有限利用 〇 爲了達成均勻施覆,有一種所謂的“徑向流反應器” 被開發〔A. R‘ Reinberg,Ann. Rev. Mater. Sci. V‘ 9, 341 〜372 頁C 1979)〕。在此反應器中,程序氣體經一電極中央一 開口供應或吸離。氣體流係徑向對稱。 然而要作均勻施覆之最大基質尺寸須遠小於反應器度 量尺寸(例如4时晶圓在一2 2吋反應器中)。又’要係 均勻施覆’氣流與R F功率準確配合,且系統不能直接作 規模放大。 在另一種變更例中(在日本專利JP5902375 u ______5 _— .__ 本紙張纽逋用中國國家榡準(CNS )从胁(2丨Gx297公釐) ---------p.裝------訂-------Λ球 -- * (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標隼局員工消费合作社印製 A7 B7 I _ ....... ' ..... 五、發明説明(4 ) 中提到)使用—種「淋浴電極」(Duscheiektrode) ’換言 之,氣體入口分佈在電極整個面積範圍。在這種系統中, 部分地實現了對於電漿交互作用(例於沈積)有利的衝擊 基流(Pralistroemung) 〇此外在氣相中不想要的濃度梯度 還略減少,但未完全消除。 本發明的目的在提供一種設備,以供在一電暈放電低 溫電漿中將平坦的基質或表面輪廓不平坦的基質作處理’ 以及提供一種處理平坦或三度空間構造之基質的方法’該 方法確保氣體處理有更高的均句度。 這種目的,係利用申請專利範圍第1項的一電漿電_ 反應器(宜爲申請專利範園第3項的具有模組構造的 器)及申請專利範圍第2 0項的一種方法達成* 此反應器的特殊構造示於第1〜1 2圖。圖式中: 〔圖式之簡單說明〕 第一圖係具有模組構造的本發明設計的侧視剖面圖’ 第二圖係第一圖相同構造沿切面A、B的視圖, 第二圖a及b所示的名構造中,即使表面輪廓不 的基質也利用小管將氣體保持相等的間隔導至其上’ 第四圖係同樣模組構造的設計的側橫截面圖’其中$ 方電極包含一框,該框具有互相平行固定的氣體分配(供 應)裝置,這些裝置延伸過電極長度範圔, 第五圖係此設計之二個不同切面E及F的上視圖’ 第六圖係此設計的一細節,由此可看出氣體供應裝® 固定在電極的框架中的方式, 本紙張尺度適用中國國家榡準(CNS ) A4規格(210X297公釐) --------裝------irC Λ (請先聞讀背面之注意事項再填窝本頁) 經濟部中央標隼局員工消費合作社印製 A7 _B7______ 五、發明説明(1) 第七圖係第五圖之氣體供應裝置的側剖面圖, 第八圖係此裝面二個不同高度之切面G、Η之上視圖 , 第九圖係此裝置之側剖面I - J, 第十圖係如第四圖所示之設計,但另外有空心導線及 天線以微波供入電漿處理室中, 第十一圖係第十圖設計之二個不同切面Κ,L的上視 圖, 第十二圖係一個具有同樣地呈模組式之構造的裝翯的 側剖面圖,其中該電極一如第四圖的情形,包含一框架’ 該框架具有平行設置的氣體供應裝置,但在此情形中這# 氣體供應裝置設計呈縱延伸之管的形式,其出口開口朝向 電漿處理室, 第十三圖係第十二圖之裝置在高度X、Υ處之割面的 上視圖, 第十四圖係類似第十二圖的設計,但該縱延伸的管的 出□開口從電漿處理室離開且朝向反射器,該反射器使氣 體擴散向基質方向分佈。 〔圖號說明〕 (1)反應器氣體出口 (2 )蓋板 (3) 〇形環 (4) 對立電極 (5 )基質 7 本纸張尺度適用中國國家揉準(CNS ) Α4规格(210X297公釐) ---------f../裝------訂-----外 — -- - (请先閲讀背面之注意事項存填寫本頁} 經濟部中央梯準局貝工消費合作杜印製 A7 B7 五、發明説明(S) (6) 中間空間 (7) 反應器氣體入口 (8) 氣體入口小管 (9) 管連接部 (1 0)氣體分配器本體 (1 1 )縫隙入口蓋板 (1 2)氣體出口縫隙 (1 3)透氣之第一電極 (14)螺絲 (1 5)氣體分配器 (1 6)第一電極的框 (1 7)槽(氣體流道) (1 8)氣體入口細孔 (1 9)吸離通路 (2 0)槽孔 (2 1 )微波通道(共軸或空心導管) (2 2 )微波天線 (2 3)絕緣物製之盤 (2 4)氣體流道(孔) (2 5 )蓋 (2 6 )電漿室 (2 7)蓋板 (2 8 )電極體中的空室 (2 9 )電極蓋中空室 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐) I--------------tr------ (請先閲讀背面之注意事項再填寫本頁) 經濟部中央播準局負工消费合作社印装 A7 B7 五、發明説明(k) (3 0 )槽 (3 1 )間隔器(框條) (3 2)金屬篩網 (3 3)電絕緣間隔器 C 3 4)管氣體分配器 (3 5)氣體出口開口 (3 6)氣體入口收集器 (3 8)電極框 (3 9)金屬柵 (4 0)氣體反射器 (4 1 ) 0形環 (4 2)壓迫板 (4 3)螺絲 (44)壓迫板中之開口 〔實施例之說明〕 本發明的電漿電極反應器包含一反應器氣體入口,氣 體經該入口送入反應器中。然後氣體不受任何構造阻礙〔 例如變窄部或類似構造)進入一氣體分配室,如此它在該 處以保持相等的壓力分佈。氣體分配室正如氣體吸離室, 被一第一電極與電漿處理室隔開。在電漿處理室中,氣體 被激發成電漿,於是它呈電漿方式作用到一基質上並使基 質改變。基質設在一個與此第一電極對立的對立電極上。 舉例而言,(例如:如果電極水平延伸——這是常有的情 形一一特別是當電極不能被氣體透過時且構成電漿電極反 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) ---------^:-裝— * - - (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部中央橾準局員工消費合作社印製 A7 B7 五、發明説明(y) 應器的底時)該介質可倚在其上。當然,介質也可固定在 第二電極上或在其附近,如此第二電極就不一定要構成此 設備的底,但這種方式比較好。 爲了要使氣體能大致垂直地(因此係呈“衝擊流”方 式)作用基質上,第一電極〔氣體透過此電極)須有大致 在其整個面積範圍分佈的氣體入口。氣體入口可對稱分佈 或排成列或以類似方式設置;這種排列的幾何性質意義不 大。但必須使氣體入口數目夠多,如此大致垂直透過的氣 體(它們受到無孔部分的偏向作用微乎其微)大致均勻地 且以相等呈作用到基質的整個面積。在此,如果個別之氣 體入口的入口橫截面保持儘量小,則特別有利。當然,入 口橫截面越少,氣體入口的數目越多。個別氣體入口的入 口橫截面宜不大於大約1 5.5 m m 2,尤宜不大於約7 m m2,且特宜不大於約1 mm 2。在此,氣體入口的幾何形 狀並不重要。舉例而言,氣體入口可設計成圓形或方形或 長槽孔形。在最後的一種情形中,一般上,入口橫截面略 大於在前面的二種情形。最好,入口或出口之間的特性間 隔小於氣體入口與基質之間的間,以避免平行於基質表面 的流動。 在氣體隨著其改變基質之成份作用到基質上後,該氣 體須儘量不要平行於基質地抽離,以避免沿著基質表面形 成濃度的梯度。因此依本發明,該氣體可再經相同之第一 電極的氣體出口出來,流經一氣體吸離室,然後離開反應 器。當然,氣體出口與氣體吸離室在空間上須與氣體分配 10 _ . 本紙張尺度逋用中薄國家橾準(CNS〉Α4規格(210'乂297公 I— I-----^ ' 裝——- - I - —訂------( •- - (請先W讀背面之注意事項再填寫本頁) 經濟部中央標率局貝工消費合作社印製 Α7 Β7 五、發明説明(έ?) 室與氣體入口分離。這種原理可在許多設計中變化,這些 設計將在下文中利用個別例子說明。然後氣體從氣體吸離 室經一反應器氣體出口(例如利用一真空泵)吸離。 本發明的原理〔亦即各利用該與所要處理的基質對立 的電極對氣體入□及氣體出口作用]可使得整個反應器的 結構極簡単。亦即不須將構件,如電極及類似物設在一個 外側的反應器室(該反應器室各經一氣體入口及出口與周 圖環境相通),當然如要如此作亦無不可。其實,只要把 處理基質所需空間由那些本來就必須存在的構件本身構成 ,就已足夠。因此,舉例而言,該電漿處理室可由第一電 極(它設有上述的氣體分配系統),與第一電極對立的第 二電極(它可帶有該基質)以及一個位於其間的框構成。 如果這些構件利用絕緣密封件互相隔開且互相連接,則得 到一個很簡單的模組構造。如此,可以用較佳(因爲很簡 單)的方式將供應氣體或將氣體運走所需的空間用以下$ 式構成:這二個空間之一係設在第一電極內,或在此電極 內的槽中,其他凹隙中,管中或其他構造中,而這二個$ 間的另一個係設在此電極之背向電漿處理室的那一面上。 爲了將該第二個空間與外界周圔環境隔開’可用簡単方# 利用一蓋,該蓋內部有一凹隙,因此當蓋以密封方式放到 第一電極上時,形成一氣體室,它可經一反應器氣體入ρ 或反應室氣體出口與一真空泵或一氣體供應裝置或類似物 連接。該二氣體室的另一個則可利用一空氣入口或出Q與 外界連接,該入口或出口通過第一電極的框。 11 本紙張尺度逍用中國國家標準(CNS > Α4規格(210X297公釐) ---I - ---装-I---I、π----I —^、 (锖先閱讀背面之注意事項存填寫本頁) 經濟部中央榡準局員工消費合作社印袈 A7 ___B7_ 五、發明説明(f ) .如果這四個構件(一)第二電極(例如呈一實心封閉 電極板形式)、(二)絕緣作用的中間框、(三)第一電 極(設有氣體通過開口,同樣地具有一牢固外框)及(四 )蓋在投影上有相同之外度量尺寸(例如上視圖呈長方形 或方形)則它們可用簡單方式當作模組式構件使用,這些 構件利用橡膠製〇型環或類似或其他密封元件互相連接。 在此,如有必要,可用簡單方式將個別的模組元件對其他 的元件作更換,如此可用少數的構件使本發明之電漿電極 反應器的設計有多種變化。 位於二電極間的中間框可由電絕緣的材料構成。但有 時可用金屬構件,因爲與真空及電漿相容而又電絕緣的材 料種類可選擇者較少。在電漿處理室中,塑膠由於高氣體 放電(Ausgasung)速率及在電策條件下降解(Degradation ),故儘可能地避免使用。因此適合之絕緣材料主要爲玻 璃與陶瓷,但它們往往很脆,它們的加工可能性大多很有 限,且加工往往很昂貴。然而,如果因此不用此種材料而 用金屬或其他導電材料,則要在朝向電漿處理室一面設絕 緣物,以使電場之均勻性不受影響。 以下配合個別實施例詳細說明本發明。 第~、二圖中所示之一反應器具有一下電極(4), 中間框(6 )及上電極(1 3),所要處理的基質(5 ) 放到該下電極(4)上或固定到其上,該中間框由電絕緣 材料(例如坡璃或陶瓷)製成,氣體分配系統建入到上電 極(13)中。 ______ 12 _ 本紙張尺度適用中國國家橾準(CNS ) Α4规格(210 X 297公嫠) (請先聞讀背面之注意事項再填寫本頁) 裝. 訂 經濟部中央揉準局負工消费合作社印装 A7 B7 五、發明説明() 蓋(2 5)裝到上電極(1 3)上,該蓋在一個框內 〔該框之寬度大約與中間框(6)相同〕有一凹隙,因此 在蓋與電極間形成一空腔(2 9)。有一蓋板(2)倚在 電極(1 3 )上。工作氣體經反應器氣體入口( 7)進入 並在氣體室〔1 7)範園中均勻分佈,該氣體室構成電極 體(1 3 )中的槽,這些槽利蓋板(2 )與吸離室分離。 然後氣體均勻地經出口通道(1 8 )·導入電漿處理室(2 6 )中》舉例而言,如果一槽的通道的總橫截面遠小於槽 的機構面且因而在通道中才發生壓力降,則可得到均勻p 分佈。 工作氣體從開口( 1 8 )進入電漿處理室(2 6 ), 且大致垂直地作用到基質(5 )上。如果開口夠小,而k 工作壓力對應地作選設,如此一來,舉例而言,氣體動力 的效應(衝擊流)會使電漿聚合產物適當地析出到對立的 一面,亦即到基質上。這點是所希望的效應。然而一般基 於製造技術理由,直徑不可任意減小。舉例而言,開口小 於0.5〜1 mm就幾乎不再能夠用機械方式鑽孔,雖然可 用雷射鑽孔,目前也可以應用,但比較昂貴。〔舉例而言 ’當電極(4 )與基質(5 )距離約4 c m,如果氣體出 口開口( 1 8 )之間的距離爲約1 ·5 c m (在大約方形圖 案的排場列場合,見第二圖)且開口直徑約0.8 mm,則 可達到衝擊流效果,其中,在電漿室中處理時,氣體壓力 在1 Ο Ο P a而氣體以0.5 s c c m〔公制立方公分/每 個入口開口之流速流過)〕 13 ---------f 裝-------訂------c'i .- . (請先聞讀背面之注意事項再填寫本頁) 本紙張尺度逋用中國國家棣準(CNS ) A4规格(210X297公釐) 經濟部中央樣準扃負工消费合作社印裝 A7 B7 五、發明説明(iJ〉 .要將反應室抽空並將反應產物吸離’在電極體(3 ) 中設有通道(1 9 ) ’在蓋板(2)中設有開口( 2 0 ) 。這些通道一如氣體入口通道(1 8)係分佈在電極面積 的範圔中。然後氣體流就經過蓋(2 5)中吸離室(2 9 )到反應器氣體出口〔 1 )’該反應器氣體出口( 1 )舉 例而言係接到一真空泵。 反應器的構件(4) (6) (13)及(25)之間 利用橡膠製成的0形環(3)密封。 第三圖a與b顯示本發明反應器的另一設計的二種變 更例。第三圖a的反應器的構造與第一、二圖類似。氣體 接頭(7 )當作反應器氣體入口用,而電極體(1 3 )則 具另一種結構。工作氣體從室(1 7 )經小管(8)送到 基質表面附近。在此,上述情形適用於小管的直徑:爲了 使氣體在電漿處理室中均勻分佈,氣體在通過小管寺才發 生壓力降。反應的氣體經該舆電極(1 3)相關的蓋板( 2 7)中的開口( 1 9 )吸離(在圖式中小管也呈同心通 過該板,但在這種設計中並不一定須如此),再經空腔〔 2 8)以及經電極體(1 3 )中的吸離接頭X 1 )吸離。 這種結構的優點爲:不同小管的長度可設計成可變化者。 如此,如果在基質上的氣體供應非呈平坦狀而係有不均勻 的表面輪廓(如圖中示意方式所示),這種氣體供應可以 導過來。在一種設計中,小管係由電絕緣材料製成。在另 一種設計中,小管由導電材料(例如金糜)製成。這點使 得電極表面大大增加且另外造成空陰極效應,其中電漿效 14 本紙張尺度適用中國國家標準(CNS ) A4规格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁) r 經濟部中央橾準局肩工消費合作社印装 A7 _B7_— 五、發明説明(β) 率可大大改善。 第三圖b顯示第三a中所示原理的一禪專屬設計,其 中該小管保持成可沿其縱軸作反向運動的方式。爲此,有 一壓迫板(4 2)倚在此電極(1 3 )上,該壓迫板可用 螺絲(4 3 )向電極(1 3 )方向施壓或鬆開。由可壓縮 材料〔例如弾性體(橡膠)〕製的0形環(4 1 )設在小 管周圍。如果將螺絲(4 3 )鬆開,·則0形環鬆鬆地套在 小管上而可沿其縱軸滑動•如果電極(13)在此狀態放 上去,而不平坦的基質(5 )已位在下電極上,則小管自 動地滑入一適當位置。只要基質具有流利的輪廓,則也是 如此自動地滑入適當位置。然後,懕迫板(4 2 )可利用 螺絲旋緊。如此作用到0形環(4 1 )上的壓迫壓力將其 形狀改變,使這些0形環此時將小管固定在所造成的位置 •同時,利用0形環確保流到氣體室(1 7)的氣體的密 封作用。(4 4)表示壓迫板中小管的開口,其餘之參考 號與第三圖a —致,此電漿反應器之其餘構件在第三圖b 中省略。 第四、五圖的設計與第一、二圖設計之不同在於電極 構造及氣體導引件》此處亦有一蓋(2 5 )裝到上電極C 1 3)上,而產生一空腔(2 9)。電極(1 3 )由一框 (1 6)構成,氣體分配器(1 5 )裝在此框上。這種氣 體分配器示於第七〜第九圖:該氣體分配器由一氣體分配 器本體C 1 0 )及一蓋板C 1 1 )構成,二者係互相粘合 或用其他方式連接。利用較深的槽(3 0 )使工作氣體均 _____~ 15 _ 本紙張尺度逋用中國國家榡準(CNS ) A4規搞「( 210X297公釐) ---------^ ------1T------ (請先閲讀背面之注^|^項再填寫本頁) 經濟部中央梯準局員工消费合作社印裝 Α7 Β7 五、發明説明(0) 勻地經由氣體出口縫隙(1 2 )分佈,氣體出Q縫隙(1 2 )在本體(1 0 )中一凹下部及蓋板(1 1 )之間形成 。縫隙(1 2 )的寬度可利用框條(3 1 )很壤確地保持 。框條(3 1)可爲本體(1 0)或板(1 1)的整體之 構件部分,但也可用粘合或其他方式固定。氣鶴經一管連 接件(9)(見第六圖)導入氣體分配器(1 5 )中。 氣體分配器裝在框(1 6)上並利用螺絲(丨4)固 定。管連接件(1 9)終止在氣體通道(2 4)(—個肓 孔)中,該氣體通道與氣體入口(7)連接。 氣體的抽出(吸離)作業係經過氣體分配器(i 5) 間的中間空間達成,再經過蓋(2 5 )中的空腔(2 9 ) 及接頭(1 )抽出。 氣體分配器之間的中間空間可導致空陰極效應,這種 效應在許多情形中可提高電漿效率。但如果和它有關的電 漿分佈並非所欲者,則如有必要可放一平坦物饑[例如一 金屬網(3 2 )〕而將此效應壓制,該物體由電獎處理室 看係設在電極(1 3)前方且與電極成導電連接,並使電 極變成平坦電極。此物體可由金屬或任何材料(gg它導 電或施覆成可導電即可)製成。如不用金屬網,也可用一 孔金屬片或具有多數開口的其他設計。 這種系統的優點爲:氣體出口縫隙(1 2)[氣體經 這些縫隙進入電漿處堙室(1 6 )〕可做成很爷。如此可 用特別有效的方式達成第一種設計(第一、二圖)中所述 的氣體動力效應。此外,這種結構在製造時很簡單且經濟 16 (請先閱讀背面之注意事項再填寫本頁)V. Description of the invention (A7 B7. The invention relates to a plasma reactor for processing a flat substrate (Substrat) or a substrate with an uneven surface profile, which has a better gas guiding effect, and the plasma of this substrate Treatment method. Plasma is a gas or vapor that is partially or completely ionized. In addition, its particles contain many excited states. They can be generated and maintained by electromagnetic fields. Ions, electrons, and molecules in the excited state of electrons in the plasma and Radiation activates and / or etches the surface or causes polymerization of many substances (especially organics) in the gas phase and forms a polymer coating on the surface of the substrate. Even compounds that are generally less reactive can be used in the plasma Chemical reactions are stimulated in the plasma. An important possible way of plasma-matrix interaction is to summarize the outline of the materials in the outline of the Central Standards Bureau of the Ministry of Economic Affairs, Consumer Cooperatives, and printed materials. ) Plasma treatment is carried out in a special reactor under vacuum. The most important thing here is that the substrate is treated uniformly. The premise of uniform treatment (especially when thin film is deposited) is to add power and material uniformly to all areas to be treated (or applied). This addition depends on the distribution of the electric field and air flow. The nearly uniform distribution of the electric field was achieved in a so-called parallel plate reactor. Please read the precautions on the back before filling this page) This paper size is applicable to Chinese National Standard (CNS) A4 (210X297 mm) Printed on the A7 B7 by the Consumers ’Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs ) (See Η V. Boenig, Fundamentals of Plasma Chemistry and Plasma Technology, Technomic Publishing Company, Lancaster! &Amp; Basel, 1988). This type of reactor is therefore particularly widely used. However, the reaction gas system runs parallel to the matrix and thus acts during the chemical reaction. This effect results in less material (for example due to deposition) and higher moles (for example due to fragmentation of the starting molecules). Therefore, the gas composition at the gas inlet is different from the gas outlet. This leads to uneven processing. Increasing the air flow can reduce this phenomenon, but at the cost of small yields and possible deterioration of the coating quality. In addition, the problem with this type of equipment when scaling up the program (Anfskalierung) is: When the surface of the cover is large, the distance between the electrodes and [especially] the air flow must be increased in proportion to achieve acceptable uniformity. But this changed the ratio between the parameters of the program, and to find the new optimal conditions, it can only be found after a series of complicated experiments on this scale-up device. Limited use. In order to achieve uniform coating, a so-called "radial flow reactor" has been developed [A. R 'Reinberg, Ann. Rev. Mater. Sci. V' 9, 341 ~ 372 pages C 1979)]. In this reactor, the process gas is supplied or sucked out through an opening in the center of an electrode. The gas flow is radially symmetrical. However, the maximum substrate size for uniform application must be much smaller than the reactor size (for example, at 4 o'clock in a 22-inch reactor). Also, the "uniform application" air flow must accurately match the RF power, and the system cannot directly scale up. In another modified example (in Japanese patent JP5902375 u ______5 _ — .__ This paper uses the Chinese National Standard (CNS) from the threat (2 丨 Gx297 mm) --------- p. ------ Order ------- Λ Ball-* (Please read the notes on the back before filling this page) Printed by the Consumer Standards Cooperative of A7 B7 I _ ... .... '..... V. mentioned in the description of the invention (4)) Use-a kind of "shower electrode" (Duscheiektrode)' In other words, the gas inlet is distributed over the entire area of the electrode. In this type of system, partial impacts on plasma interactions (such as deposition), which are beneficial for plasma interaction, are partially achieved. In addition, unwanted concentration gradients in the gas phase are slightly reduced, but not completely eliminated. The object of the present invention is to provide a device for treating a flat substrate or a substrate having an uneven surface profile in a corona discharge low-temperature plasma, and a method for treating a substrate having a flat or three-dimensional structure. The method ensures a higher degree of uniformity in the gas treatment. This purpose is achieved by a plasma-electric reactor (item No. 3 in the patent application park with a modular structure) and a method in the patent application No. 20 * The special structure of this reactor is shown in Figures 1 ~ 12. In the drawings: [A brief description of the drawings] The first figure is a side sectional view of the design of the present invention with a module structure. The second figure is a view of the same structure along the cutting plane A and B in the first figure, and the second figure a In the structure shown in Figures and b, even if the substrate does not have a contour on the surface, a small tube is used to guide the gas to it at equal intervals. The fourth diagram is a side cross-sectional view of a design with the same module structure. A frame with gas distribution (supply) devices fixed in parallel to each other. These devices extend over the length of the electrode. Figure 5 is a top view of two different cuts E and F of this design. Figure 6 is this design. A detail of this can be seen from the way the gas supply device ® is fixed in the frame of the electrode. This paper size applies to China National Standard (CNS) A4 (210X297 mm) -------- installation- ----- irC Λ (Please read the notes on the back before filling in this page) Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs A7 _B7______ 5. Description of the invention (1) The seventh picture is the fifth picture A side sectional view of the gas supply device. Top views of cut planes G and 不同 at different heights, the ninth picture is the side section I-J of the device, and the tenth picture is the design shown in the fourth picture, but there are hollow wires and antennas to feed the plasma with microwaves In the processing chamber, the eleventh figure is an upper view of two different cut planes K, L designed in the tenth figure, and the twelfth figure is a side cross-sectional view of a device having the same modular structure, in which the The electrode, as in the case of the fourth figure, includes a frame. The frame has a gas supply device arranged in parallel, but in this case, the gas supply device is designed in the form of a longitudinally extending tube with an outlet opening facing the plasma processing chamber. The thirteenth figure is a top view of the cut surface of the device of the twelfth figure at the height X and Υ. The fourteenth figure is similar to the design of the twelfth figure, but the outlet of the longitudinally extending tube is opened from the electricity The slurry processing chamber exits and faces a reflector, which diffuses the gas toward the substrate. [Illustration of drawing number] (1) Reactor gas outlet (2) Cover plate (3) O-ring (4) Opposing electrode (5) Substrate 7 This paper size is applicable to China National Standard (CNS) A4 (210X297) Li) --------- f ../ installation ------ order ----- outside ----(Please read the notes on the back and fill in this page first} Central Ministry of Economic Affairs Printed by ABS, B7, DuPont Bureau of Cooperative Laboratories A7 B7 V. Description of the invention (S) (6) Intermediate space (7) Reactor gas inlet (8) Gas inlet tubing (9) Pipe connection (1 0) Gas distributor body (1 1) Slot inlet cover (1 2) Gas outlet slot (1 3) Breathable first electrode (14) Screw (1 5) Gas distributor (1 6) Frame (1 7) slot of the first electrode ( Gas flow channel) (1 8) Gas inlet fine hole (1 9) Absorption passage (20) Slot hole (2 1) Microwave channel (coaxial or hollow tube) (2 2) Microwave antenna (2 3) Insulator Plate (2 4) gas flow channel (hole) (2 5) cover (2 6) plasma chamber (2 7) cover plate (2 8) cavity in electrode body (2 9) electrode cover hollow chamber Paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) I -------------- tr ------ (Please read the back first Please fill in this page again)) A7 B7 printed by the Central Broadcasting Bureau of the Ministry of Economic Affairs and Consumer Cooperatives V. Description of the invention (k) (3 0) Slots (3 1) Spacer (frame) (3 2) Metal Screen (3 3) Electrically insulated spacer C 3 4) Tube gas distributor (3 5) Gas outlet opening (3 6) Gas inlet collector (3 8) Electrode frame (3 9) Metal grid (4 0) Gas Reflector (4 1) 0-ring (4 2) Pressing plate (4 3) Screw (44) Pressing opening in the plate [Explanation of the embodiment] The plasma electrode reactor of the present invention includes a reactor gas inlet. It is fed into the reactor through this inlet. The gas then enters a gas distribution chamber without being obstructed by any structure (such as a narrowed portion or similar structure) so that it maintains an equal pressure distribution there. The gas distribution chamber, like the gas suction chamber, is separated from the plasma processing chamber by a first electrode. In the plasma processing chamber, the gas is excited into a plasma, so it acts on a substrate in a plasma manner and changes the substrate. The substrate is disposed on an opposite electrode opposite to the first electrode. For example, (for example: if the electrode extends horizontally-this is a common situation-especially when the electrode cannot be penetrated by gas and constitutes a plasma electrode (Mm) --------- ^:-pack — *--(Please read the notes on the back before filling out this page) Order the A7 B7 printed by the Employees' Cooperatives of the Central Procurement Bureau of the Ministry of Economic Affairs Note (y) When the bottom of the reactor) the medium can rest on it. Of course, the medium can also be fixed on or near the second electrode, so the second electrode does not necessarily form the bottom of the device, but this way is better. In order for the gas to act on the substrate approximately vertically (thus in a “shock flow” manner), the first electrode (gas through this electrode) must have gas inlets distributed approximately over its entire area. The gas inlets can be symmetrically arranged or arranged in columns or similarly; the geometric nature of this arrangement is not significant. However, the number of gas inlets must be large enough so that the gases that pass approximately vertically (they are biased by the non-porous portion to a minimum) are applied uniformly and equally to the entire area of the substrate. It is particularly advantageous here if the inlet cross section of the individual gas inlets is kept as small as possible. Of course, the smaller the inlet cross section, the greater the number of gas inlets. The inlet cross-section of individual gas inlets should not be greater than about 1 5.5 m 2, especially not greater than about 7 m 2, and particularly preferably not greater than about 1 mm 2. The geometry of the gas inlet is not important here. For example, the gas inlet can be designed as a round or square or slotted slot. In the last case, the inlet cross section is generally slightly larger than in the previous two cases. Preferably, the characteristic interval between the inlet or outlet is smaller than the interval between the gas inlet and the substrate to avoid flow parallel to the surface of the substrate. After the gas acts on the substrate as it changes the composition of the substrate, the gas must be removed as far as possible parallel to the substrate to avoid a concentration gradient along the surface of the substrate. Therefore, according to the present invention, the gas can pass out of the gas outlet of the same first electrode, flow through a gas suction chamber, and then leave the reactor. Of course, the space between the gas outlet and the gas suction chamber must be distributed with the gas 10 _. This paper is designed for medium and thin countries (CNS> Α4 standard (210 '乂 297mm I—I ----- ^') ————-I-—Order ------ (•--(please read the precautions on the back before filling this page) Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, Α7 Β7 V. Invention Explanation (Hand?) The chamber is separated from the gas inlet. This principle can be changed in many designs, which will be explained below using individual examples. The gas is then drawn from the gas extraction chamber through a reactor gas outlet (for example, using a vacuum pump) The principle of the present invention [that is, the use of the gas inlet and gas outlet functions of the electrodes opposite to the substrate to be processed] can make the structure of the entire reactor extremely simple. That is, the components such as the electrodes and The analogs are located in an outer reactor chamber (the reactor chambers are connected to the surrounding environment through a gas inlet and an outlet), of course, this is not necessary. In fact, as long as the space required for processing the substrate is changed from those originally Component book The structure is sufficient. Therefore, for example, the plasma processing chamber may include a first electrode (which is provided with the above-mentioned gas distribution system), a second electrode (which may have the substrate) opposite to the first electrode, and A frame structure located between them. If these components are separated from each other and connected to each other by insulating seals, a very simple module structure is obtained. In this way, the gas can be supplied or gas can be supplied in a better (because simple) way. The space required for removal is composed of the following $: one of these two spaces is located in the first electrode, or in a slot in this electrode, in another recess, in a tube, or in another structure, and these two The other one is located on the side of this electrode facing away from the plasma processing chamber. In order to separate the second space from the surrounding environment, an available cover is used. A cover is provided inside the cover. The recess, so when the cover is placed on the first electrode in a sealed manner, a gas chamber is formed, which can be connected to a vacuum pump or a gas supply device or the like via a reactor gas inlet ρ or a reaction chamber gas outlet. The other of the two gas chambers can use an air inlet or outlet Q to connect with the outside, and the inlet or outlet passes through the frame of the first electrode. 11 This paper size is in accordance with the Chinese national standard (CNS > Α4 size (210X297 mm) --- I---- Equipment-I --- I, π ---- I — ^, (锖 Please read the precautions on the back and fill in this page first) Employees' Cooperatives of the Central Economic and Technical Bureau of the Ministry of Economic Affairs Seal A7 ___B7_ 5. Description of the invention (f). If these four components (a) the second electrode (for example, in the form of a solid closed electrode plate), (b) the middle frame of insulation, (c) the first electrode (with gas Through the opening, there is also a solid frame) and (d) the cover has the same external dimensions on the projection (such as rectangular or square in the top view), they can be used as modular components in a simple way. Rubber O-rings or similar or other sealing elements are connected to each other. Here, if necessary, individual module elements can be replaced with other elements in a simple manner, so that the design of the plasma electrode reactor of the present invention can be varied in a small number of components. The middle frame between the two electrodes may be made of an electrically insulating material. However, sometimes metal components can be used, because there are fewer types of materials that are compatible with vacuum and plasma and electrically insulating. In the plasma processing chamber, plastics are avoided as much as possible due to the high gas discharge (Ausgasung) rate and degradation under electrical conditions (Degradation). Therefore, suitable insulating materials are mainly glass and ceramics, but they are often very brittle, their processing possibilities are mostly limited, and their processing is often expensive. However, if a metal or other conductive material is used instead of this material, an insulator should be provided on the side facing the plasma processing chamber so that the uniformity of the electric field is not affected. The present invention is described in detail below with reference to individual embodiments. One of the reactors shown in the first and second figures has a lower electrode (4), a middle frame (6) and an upper electrode (1 3), and the substrate (5) to be processed is placed on the lower electrode (4) or fixed. On top of this, the middle frame is made of an electrically insulating material (such as slope glass or ceramic), and a gas distribution system is built into the upper electrode (13). ______ 12 _ This paper size is applicable to China National Standards (CNS) Α4 size (210 X 297 gong) (please read the precautions on the back before filling this page). Printed A7 B7 5. Description of the invention () The cover (2 5) is attached to the upper electrode (1 3). The cover is in a frame (the width of the frame is about the same as that of the middle frame (6)). A cavity (29) is formed between the cover and the electrode. A cover (2) rests on the electrode (1 3). The working gas enters through the reactor gas inlet (7) and is evenly distributed in the gas chamber [1 7]. The gas chamber constitutes a groove in the electrode body (1 3). These grooves cover the cover plate (2) and suck away. Room separation. Then, the gas is uniformly introduced into the plasma processing chamber (2 6) through the outlet channel (18). For example, if the total cross-section of the channel of a tank is much smaller than the mechanical surface of the tank and pressure occurs in the channel Drop, you can get a uniform p-distribution. The working gas enters the plasma processing chamber (2 6) from the opening (1 8), and acts on the substrate (5) substantially vertically. If the opening is small enough, and the k working pressure is selected accordingly, for example, the aerodynamic effect (impulse flow) will cause the plasma polymerization product to properly precipitate to the opposite side, that is, to the substrate . This is the desired effect. Generally, however, the diameter cannot be reduced arbitrarily for reasons of manufacturing technology. For example, openings smaller than 0.5 to 1 mm can hardly be mechanically drilled. Although laser drilling can be used, it can also be used today, but it is more expensive. [For example, 'When the distance between the electrode (4) and the substrate (5) is about 4 cm, if the distance between the gas outlet opening (18) is about 1.5 cm (in the case of a square pattern, see section (Two pictures) and the opening diameter is about 0.8 mm, the impinging flow effect can be achieved, in which, when processed in the plasma chamber, the gas pressure is 1 〇 〇 P a and the gas is 0.5 sccm [metric cubic centimeter / each inlet opening Velocity flows through]] 13 --------- f Pack --------- Order ------ c'i .-. (Please read the precautions on the back before filling in this page ) This paper size uses China National Standards (CNS) A4 (210X297 mm) Central Samples of the Ministry of Economic Affairs, printed by the Consumer Cooperative Cooperative A7 B7 V. Invention Description (iJ>. The reaction chamber should be evacuated and the reaction Product adsorption is provided with channels (19) in the electrode body (3) and openings (20) in the cover plate (2). These channels are distributed over the electrode area like the gas inlet channels (18). The gas flow then passes through the suction chamber (2 9) in the cover (2 5) to the reactor gas outlet [1]. The reactor gas outlet (1) is exemplified and The word is connected to a vacuum pump. The components (4), (6), (13) and (25) of the reactor are sealed with a 0-ring (3) made of rubber. The third figures a and b show two variations of another design of the reactor of the present invention. The structure of the reactor of the third figure a is similar to that of the first and second figures. The gas connection (7) is used as the gas inlet of the reactor, and the electrode body (1 3) has another structure. The working gas is sent from the chamber (17) through the small tube (8) near the surface of the substrate. Here, the above situation applies to the diameter of the small tube: in order to make the gas evenly distributed in the plasma processing chamber, the pressure drop occurs only when the gas passes through the small tube temple. The reacted gas is sucked away through the opening (19) in the cover plate (27) associated with the electrode (13) (the small tubes also pass through the plate concentrically in the figure, but this is not necessarily the case) It must be so), and then sucked through the cavity [2 8) and through the suction connector X 1) in the electrode body (1 3). The advantage of this structure is that the length of different small tubes can be designed to be variable. In this way, if the gas supply on the substrate is not flat and has an uneven surface profile (as shown schematically in the figure), this gas supply can be guided. In one design, the tubing is made of an electrically insulating material. In another design, the small tube is made of a conductive material, such as gold emulsion. This makes the electrode surface greatly increase and also causes an empty cathode effect. Among them, the plasma effect is 14. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page) r A7 _B7_—Printed on the shoulder labor consumer cooperatives of the Central Bureau of Quasi-Ministry of the Ministry of Economic Affairs 5. Explanation of invention (β) The rate can be greatly improved. The third figure b shows a Zen-exclusive design of the principle shown in the third a, in which the small tube is held in a way that can be moved in the reverse direction along its longitudinal axis. To this end, a pressing plate (4 2) leans on the electrode (1 3), and the pressing plate can be pressed or loosened in the direction of the electrode (1 3) with a screw (4 3). An O-ring (4 1) made of a compressible material (for example, a pliable body (rubber)) is provided around the small tube. If the screw (4 3) is loosened, the 0-ring is loosely placed on the small tube and can slide along its longitudinal axis. • If the electrode (13) is put in this state, the uneven substrate (5) has been Placed on the lower electrode, the small tube automatically slides into place. As long as the matrix has a fluent profile, it will slide into place automatically. Then, the pressing plate (4 2) can be tightened with screws. The compressive pressure acting on the O-rings (4 1) in this way changes their shape, so that these 0-rings now fix the small tubes in the position created at the same time. At the same time, the 0-rings are used to ensure the flow to the gas chamber (1 7) Gas sealing effect. (4 4) indicates the opening of the small tube in the compression plate, and the remaining reference numbers are consistent with the third figure a. The remaining components of this plasma reactor are omitted in the third figure b. The design of the fourth and fifth drawings is different from the design of the first and second drawings in the electrode structure and the gas guide. There is also a cover (2 5) attached to the upper electrode C 1 3), and a cavity (2 9). The electrode (1 3) is composed of a frame (16), and the gas distributor (1 5) is mounted on the frame. This gas distributor is shown in Figures 7 to 9: The gas distributor is composed of a gas distributor body C 1 0) and a cover plate C 1 1), which are bonded to each other or connected by other means. Use deeper grooves (30) to make all working gases _____ ~ 15 _ This paper size is in accordance with China National Standard (CNS) A4 "" (210X297 mm) --------- ^- ----- 1T ------ (Please read the notes on the back ^ | ^ before filling this page) Printed by the Consumer Cooperatives of the Central Ladder Bureau of the Ministry of Economic Affairs Α7 Β7 V. Description of the invention (0) It is distributed through the gas outlet gap (1 2), and the gas outlet Q gap (1 2) is formed between a concave lower part in the body (1 0) and the cover plate (1 1). The width of the gap (1 2) can be used by the frame bar (3 1) It is very firmly maintained. The frame strip (3 1) can be an integral component part of the body (1 0) or the plate (1 1), but it can also be fixed by bonding or other methods. The gas crane passes through a tube The connector (9) (see figure 6) is introduced into the gas distributor (1 5). The gas distributor is mounted on the frame (16) and fixed with screws (丨 4). The tube connector (19) terminates in In the gas channel (2 4) (one countersink), the gas channel is connected to the gas inlet (7). The gas extraction (suction) operation is achieved through the intermediate space between the gas distributors (i 5), and then through Empty in the cover (2 5) (2 9) and connector (1) are drawn out. The intermediate space between the gas distributors can lead to an empty cathode effect, which can improve the plasma efficiency in many cases. But if the plasma distribution related to it is not what you want If necessary, a flat object [such as a metal mesh (3 2)] can be placed to suppress this effect. The object is seen from the electric processing room and is located in front of the electrode (1 3) and is conductive with the electrode. Connect and make the electrode a flat electrode. This object can be made of metal or any material (it can be conductive or coated to be conductive). If a metal mesh is not used, a hole metal sheet or other designs with most openings The advantage of this system is that the gas outlet gaps (12) [gas enters the plasma chamber (1 6) through these gaps] can be made very good. In this way, the first design can be achieved in a particularly effective way (the Figures 1 and 2). In addition, this structure is simple and economical to manufacture. 16 (Please read the notes on the back before filling this page)

本紙張尺度適用中國國家梂準(CNS ) Α4规格(210X297公釐) Α7 Β7 五、發明説明(斗) ,因爲許多之氣體入口可藉著只有二個部分〔本體(10 )與蓋板(1 1)〕的連接而達成。在此不需鑽多數小孔 經濟部中央樣準局属工消費合作社印裝 此外,第一、二圖的設計的結構的不同處在於:中間 框〔6 )由金厲製成。因此爲了確保二部分間呈電絕緣’ 除了0形環外還使用塑膠製的間隙保持器(3 3)。由於 中間框的金靥壁可扮演附加電極的角色’特別是當此系統 在高頻下操作時,且因此會影響電場分佈的均与性’故設 有由一種絕緣物(例如玻璃)製的盤(2 3 )’它們金 屬壁與電漿處理室隔開。 第十及十一圖顯示第四、五圖設計的一變更方式 體導引件係相同者,在此處,能童的供入係另外利用徼波 達成,·微波利用共軸(或空心導體)通路(2 1 )供入’ 該通路呈密封狀態經過蓋(2 5)及經過氣體分配器(1 5)之間的空間放入電漿處理室中。舉例而言’微波可利 用天線(2 2)射入室(2 6 )中 與高頻能量的共同作用而大大提高 所希望者。 第十二及十三圖所示之設計中 成與第四、五圖相似。但此處使用具有開口(3 5 )的管 (3 4)做氣體分配器。當然,管開口的大小’在二者的 情形也是相似,這點在前文中在氣體入口進入電漿處理室 的出□的說明中已提到過。使用管(3 4 )代替氣體分配 器(1 5 )的優點爲:結構上特別簡單。 氣 電漿效率利用微波能 這點在許多情形中係 氣體的導引與分佈做 --------.裝------訂------ • - - ^ (請先W讀背面之注意事項再填寫本頁) 17 本纸張尺度適用中國國家樣準(CNS ) Α4規格(210X297公釐) A7 B7 經濟部中央標準局貝工消费合作社印製 五、發明説明(〆) 在一個此種的實施例中,電漿處理室(2 6 )可選擇 性地另外利用一金靥柵或網·( 3 9 )舆蓋(2 5 )中之吸 離室(2 9)隔開。在此情形中,管可用導電或不導電材 料構成。 第十四圖所示之設計與第十二及第十三圖者很像。但 在此處該管設成使其開口不朝向電漿處理室,而朝相反的 方向。在此處,出來氣體跑到反射器(4 0)上,該反射 器將氣體擴散反射到基質方向,雖然在此設計中氣體流比 較擴散,但大體上不會發生與基質平行的氣體流。 如上述,氣體出口開口( 1 8)的小直徑導致一種朝 向基質的衝擊流,這種衝擊流很有利,因爲它在大多情形 中可使化學物質作更佳的消耗以及有較高之處理速率(例 如沈積或刻蝕);此外,如此可以確保壓力下降的情形在 出口開口才發生,且由所有這些開口出來的氣體流都均勻 一致。然而這種衝擊流並不是對所有處理方法都是最適當 的。在某些情形中,它會在基質上造成一種處理圖案,這 種處理圖案對應於開口的分佈。爲了避免這種情事,氣體 流在特殊情形中(如第十四圖所示)先朝向相反方向然後 利用氣體反射器(4 0)擴散反射到基質方向。 18 本紙張尺度適用中國國家梯準(CNS ) A4规格(210X297公釐) •. . (請先聞讀背面之注意事項再填寫本頁) -δThis paper size applies to China National Standards (CNS) A4 specifications (210X297 mm) Α7 Β7 V. Description of the invention (bucket), because many gas inlets can have only two parts [the body (10) and the cover plate (1 1)] connection. It is not necessary to drill most small holes here. It is printed by the Central Procurement Bureau of the Ministry of Economic Affairs, which is an industrial and consumer cooperative. In addition, the structure of the design of the first and second pictures is different: the middle frame [6] is made of Jin Li. Therefore, in order to ensure electrical insulation between the two parts', a gap retainer (3 3) made of plastic is used in addition to the O-ring. Because the gold frame of the middle frame can play the role of an additional electrode, 'especially when this system is operated at high frequencies, and therefore it will affect the uniformity of the electric field distribution' The plates (2 3) 'have their metal walls separated from the plasma processing chamber. The tenth and eleventh diagrams show a modification of the fourth and fifth diagrams. The body guide is the same. Here, the energy supply system is achieved by using chirp waves. Microwaves are coaxial (or hollow) ) The channel (2 1) is fed in. The channel is sealed and placed in the plasma processing chamber through the space between the cover (2 5) and the gas distributor (1 5). For example, the 'microwave' can use the antenna (2 2) to enter the chamber (2 6) in conjunction with high-frequency energy to greatly increase the desire. The design components shown in Figures 12 and 13 are similar to those in Figures 4 and 5. But here a tube (34) with an opening (35) is used as the gas distributor. Of course, the size of the tube opening is also similar in the two cases, which was mentioned in the previous description of the gas inlet entering the plasma processing chamber. The advantage of using a tube (3 4) instead of a gas distributor (1 5) is that the structure is particularly simple. Gas plasma efficiency uses microwave energy. In many cases, it is the guidance and distribution of gas. --------.----------------------^ (Please Read the notes on the reverse side before filling out this page) 17 This paper size applies to the Chinese National Standard (CNS) Α4 size (210X297 mm) A7 B7 Printed by the Bayer Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Ii) In one such embodiment, the plasma processing chamber (2 6) may optionally additionally use a suction chamber (2 9) in a gold grid or net (3 9) and a cover (2 5). ) Separated. In this case, the tube may be constructed of a conductive or non-conductive material. The design shown in Figure 14 is similar to those in Figures 12 and 13. However, the tube is arranged here so that its opening does not face the plasma processing chamber, but faces in the opposite direction. Here, the outgoing gas runs onto a reflector (40), which diffuses and reflects the gas in the direction of the matrix. Although the gas flow is more diffuse in this design, substantially no parallel gas flow occurs to the matrix. As mentioned above, the small diameter of the gas outlet opening (18) results in an impinging stream towards the substrate. This impinging stream is advantageous because in most cases it allows better consumption of chemicals and a higher treatment rate. (Such as deposition or etching); in addition, this ensures that pressure drops occur at the outlet openings and that the gas flow from all these openings is uniform. However, this impinging stream is not optimal for all treatment methods. In some cases, it creates a treatment pattern on the substrate, which treatment pattern corresponds to the distribution of openings. To avoid this, in special cases (as shown in Figure 14), the gas flow is first directed in the opposite direction and then diffused and reflected to the substrate by the gas reflector (40). 18 This paper size applies to China National Standard (CNS) A4 (210X297mm) •.. (Please read the precautions on the back before filling this page) -δ

Claims (1)

六 、申請專利範固 ABCD 經濟部中央梂準局負工消费合作社印製 1 ·一種電漿反應器,包含: ---反應器氣體入口( 7), —一一氣體分配室(17), ~~--電漿處理室(2 6 ),它被一第一電極(1 3 )及一個對立之第二電極(4)所界定, ---氣體吸離室(2 8 ) ( 2 9 ), 一一·一反應器氣體出口( 1 ), 其中該第一電極(13)把氣體分配室(17)與電 漿處理室(2 6)隔開且設有氣體入口( 1 8)’大致分 佈其面積範圔,氣體可從氣體分配室(1 7)經該氣體入 口〔 1 8)流入,其特徵在: 該第一電極也將氣體吸離室(2 8 )( 2 9 )與電漿 處理奪隔開且設有氣體出口( 1 9),大致分佈在其面積 範圍,氣體可從電漿處理室(2 6 )經該^出口流入氣 體吸離室(2 9)中。 h 2·如申請專利範圔第1項之電漿反 該個別氣體入口( 1 8 )的入口橫截 1 6mm2左右,且宜不大於4mm2左右 5 m si2左右。 申請專利範圍第1或第2項之電_ 該反Μ &含導電材料製的封閉電極板(4),一中間框 (6 導電材料製的電極(1 3 )及一蓋1該電極( 1 3 )設有一氣體入□系統〔7) C 1 7) ( 1 8)或氣 體出口系統(1 )( 1 8)或氣體出口(9 )之用’其中6. Apply for a patent Printed by Fangu ABCD Printed by the Consumers' Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs1. A plasma reactor, including: --- reactor gas inlet (7),-one gas distribution room (17), ~~ --The plasma processing chamber (2 6), which is defined by a first electrode (1 3) and an opposite second electrode (4), --- a gas absorption chamber (2 8) (2 9 ), One by one reactor gas outlet (1), wherein the first electrode (13) separates the gas distribution chamber (17) from the plasma processing chamber (2 6) and is provided with a gas inlet (1 8) ' The area is roughly distributed, and gas can flow in from the gas distribution chamber (17) through the gas inlet (1 8), which is characterized in that the first electrode also sucks the gas away from the chamber (2 8) (2 9) and The plasma treatment is separated and provided with a gas outlet (19), which is roughly distributed in its area. Gas can flow from the plasma treatment chamber (26) through the outlet into the gas suction chamber (29). h 2 · If the plasma inversion of item 1 of the patent application is reversed, the inlet cross section of the individual gas inlet (18) is about 16 mm2, and preferably not more than about 4 mm2 and about 5 m si2. The scope of the patent application item 1 or 2 _ The reverse M & contains a closed electrode plate (4) made of conductive material, a middle frame (6 electrodes (1 3) made of conductive material) and a cover 1 of the electrode ( 1 3) A gas inlet system [7] C 1 7) (1 8) or gas outlet system (1) (1 8) or gas outlet (9) 本紙at尺度逋用中國國家棵準(CNS)Α4麟(2丨0X297公瘦) (請先閲讀背面之注意事項再填寫本頁) S rThis paper is at the size of China National Standard (CNS) Α4 Lin (2 丨 0X297 male thin) (Please read the precautions on the back before filling this page) S r 其中: 面積不大於 最好不大於2Among them: the area is not larger than 2 A8 B8 C8 D8 ^、申請專利範圍 封閉電極(4)、中間室(6)以及電極(1 3)互相連 接成密封方式,形成該電漿處理室(2 6),且該具有一 凹隙的蓋(2 5)以密封方式放到電極(1 3 )的一框( 1 6)上’使得在蓋(2 5)與電極板(1 3)之間形成 一氣體吸離室(2 9)或氣體分配室(1 7)。 4 ·如申請專利範圍第3項之電漿反應器,其中: 該蓋(2 5)有一反應器氣體出口( 1 ),且在該出 口與電極(1 3)間形成一氣體吸離室(2 9) » 5 ·如申請專利範圍第3項之電漿反應器,其中: 該底板(4),中間框(6),板(U )與蓋( 5)利用0形環互相作密封連接。 6 *如申請專利範圍第3項之電漿反其中 該電(1 3 )朝向氣體吸離室(2 9 —邊設有 一個具通道開口( 2 0)的蓋板(2),該蓋板將電極( 1 3)中的槽(1 7)與氣體吸離室(2 9)隔開,且其 通過開口( 2 0)與第一電極(1 3)的氣體出口( 1 9 )相通,使氣體可從電漿處理室(2 6 )經氣體出□ C 1 9 )及開口( 2 0 )流入氣體吸離室(2#,並經反應 器氣體出口( 1)吸出。 Μ 7 ·如申請專利範圍第4項之電漿反其中: 第一電極(1 3 )有一反應器氣體入),經其 框(6)側向延伸,並有大致平行延伸過整個板內面的槽 C 1 7 ),與反應器氣體入□(7 )連接,並有多數設在 槽內的氣體通過開口( 1 8),用於使氣體進入電漿處理 本紙張尺度逋用中國國家揉準(CNS ) A4规格(210X297公釐) --------Λ¥------tr-------f * · . (請先聞讀背面之注意事項再填寫本頁) 經濟部中央標準局另工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 室(2 6),其中該氣體通過開口( 1 8)的直徑遠小於 槽(1 7)的橫截面》 8如申請專利範圍第1項之電漿_ #中 該氣體入口( 1 8)設計成小管A8 B8 C8 D8 ^, the patent application scope closed electrode (4), intermediate chamber (6) and electrode (13) are connected to each other in a sealed manner to form the plasma processing chamber (2 6), and the The cover (2 5) is placed on a frame (1 6) of the electrode (1 3) in a sealed manner so that a gas suction chamber (2 9) is formed between the cover (2 5) and the electrode plate (1 3). Or gas distribution chamber (1 7). 4. The plasma reactor according to item 3 of the patent application scope, wherein: the cover (2 5) has a reactor gas outlet (1), and a gas suction chamber (13) is formed between the outlet and the electrode (1 3) ( 2 9) »5 · The plasma reactor according to item 3 of the patent application scope, wherein: the bottom plate (4), the middle frame (6), the plate (U) and the cover (5) are sealed with each other by using an O-ring . 6 * If the plasma of item 3 of the patent application is reversed, the electricity (1 3) faces the gas absorption chamber (29-a cover (2) with a channel opening (20) is provided on the side, the cover The groove (1 7) in the electrode (1 3) is separated from the gas suction chamber (29), and it is in communication with the gas outlet (1 9) of the first electrode (1 3) through the opening (20), So that the gas can flow from the plasma processing chamber (2 6) through the gas outlet □ C 1 9) and the opening (20) into the gas suction chamber (2 #) and suck out through the reactor gas outlet (1). Μ 7 · 如The plasma of item 4 of the scope of patent application is in which: the first electrode (1 3) has a reactor gas inlet), extends laterally through its frame (6), and has a slot C 1 extending substantially parallel to the entire inner surface of the board; 7), which is connected to the reactor gas inlet □ (7), and most of the gas set in the tank passes through the opening (18), which is used to allow the gas to enter the plasma treatment. This paper is calibrated in China (CNS) A4 specification (210X297mm) -------- Λ ¥ ------ tr ------- f * ·. (Please read the precautions on the back before filling this page) Economy Consumers Cooperatives System A8 B8 C8 D8 VI. Patent application room (2 6), where the diameter of the gas through the opening (18) is much smaller than the cross section of the groove (17) "8 Such as the plasma of the patent application item 1_ # 中 The gas inlet (1 8) is designed as a small tube 經濟部中央揉率局負工消費合作社印裂 (請先聞讀背面之注項再填寫本頁) (8 形式,該小管 )進去》 反應器,其中: 穿過第一電極延伸到電漿處理室 9·如申請專利範圍第8項 該小管(8)各突伸到電^室(g 6 )中不同距離 使得即使該基表面輪廓不均勻時,小管末端距位在或設在 第二電極(4 )上的該基質的距離仍保持 1 0 ·如申請專利範圔第8項之電其中: 該小管由電絕緣材料或由導電材料製^^ 1 1 ·如申請專利範圍第8項之電漿其中: 在蓋(2 5 )與第一電極(1 3)之隨^一氣體分配 室(1 7),氣體可由該氣體分配室經小管(8)進入電 绩處埋室(2 6)。 -1 2 ·如申請專利範圍第1 1項之電漿g Γ,其中 C 2 6 之電網Printed by the Consumer Affairs Cooperative of the Central Rubbing Bureau of the Ministry of Economic Affairs (please read the note on the back before filling in this page) (8 forms, the small tube) in the "reactor", which: through the first electrode to the plasma treatment Chamber 9 · If the scope of the patent application is the 8th item, each of the small tubes (8) protrudes into the electrical chamber (g 6) at different distances so that even when the contour of the base surface is uneven, the end of the small tube is located at or located at the second electrode (4) The distance between the substrate and the substrate is still maintained at 10. • As in the case of the patent application No. 8 item, where: The small tube is made of an electrically insulating material or a conductive material ^^ 1 1 The plasma includes: a gas distribution chamber (1 7) following the cover (2 5) and the first electrode (1 3), and the gas can enter the buried room (2 6) from the gas distribution chamber through the small tube (8). ). -1 2 · As for the plasma g Γ of item 11 in the scope of patent application, of which C 2 6 grid 該小管入口橫截面不大於1 6 mm 2左右,旦宜不大 約4 m m 2,且最好不大於2 5 mm 2左右。 如申請專利範圍第11項之電漿反癍 k其中The cross section of the inlet of the small tube is not more than about 16 mm 2, preferably not more than about 4 mm 2, and preferably not more than about 25 mm 2. For example, the plasma response of item 11 of the patent application 該電極(1 3 )在朝向該電漿反應室的一邊有一個設 有氣體出□( 1 9 )的蓋板(2 7 ),使得在該第一電極 (1 3 )朝向氣體分配室(1 7 )的部分及蓋板(2 7 ) 本紙張尺度適用中國國家捸準(CNS ) A4規格(210X297公釐) Α8 Β8 C8 D8 經濟部中央橾準局貞工消费合作社印«. 六、申請專利範圍 間形成一氣體吸離室(2 8 ),該氣體吸離室與一個設在 第一電極(1 3)側邊的反應器氣體出口( 1 )連接。 1 4 ·如申請專利範圍第4項之電漿反應器,其中: 該電極(1 3)有一經過其框(1 6)側向延伸的反 應器氣體入口( 7)以及大致互相平行裝在框上的氣體分 配裝置(1 5),該氣體分配裝置與反應器氣體入口(7 )相通。 1 5 ·如申請專利範圍第1或第2項之電漿反應器, 其中: 該同軸或空心導線經第一電極(13)導入電漿處理 室〔2 6 ),微波能量可經該或空心導線送入電漿處 理室(2 6〉中。 1 6 ·如申請專利範園〗@或第2項之電漿反應器, 其中私 在第一電極(1 3 )與電漿處理室(2 6 )之間設有 一導電物質製的平坦元件(3 2 )且與該電極(1 3 )呈 導電連按,該元件(3 2)設有多數開口。 1 7 · —種用白熾放電低溫電漿處理基質的方法,其 中該電漿在一電漿處理室激發,且該激發之電漿大致垂直 地作用到該位於該處理室中的基質上,其特徵在: 該氣體吸離作用係沿著與氣體作用到基質的作用方向 相反的方向同樣地大致垂《直於基質進行。 1 8 ·如申請專利範圍第1 7項之方法,其中: 該氣體經過一些開口導入該電漿_理室中,該開口大 致相對於該基質表面均句分佈,且各具約不大於1 6 mm2的 橫截面,且宜不大於約4 mm2,最好不大於2 · 5麵2。 获灰获願Τ辟家料rewjX4-紙(τ_97么ϊ) 4 —.------《”本------订-------η (請先Η讀背面之注意事項再填寫本頁)The electrode (1 3) has a cover (2 7) provided with a gas outlet (1 9) on a side facing the plasma reaction chamber, so that the first electrode (1 3) faces the gas distribution chamber (1 7) Parts and covers (2 7) This paper size is applicable to China National Standards (CNS) A4 specifications (210X297 mm) Α8 Β8 C8 D8 Printed by Zhenong Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs A gas suction chamber (2 8) is formed between the ranges, and the gas suction chamber is connected to a reactor gas outlet (1) provided on the side of the first electrode (1 3). 1 4 · The plasma reactor according to item 4 of the scope of patent application, wherein: the electrode (1 3) has a reactor gas inlet (7) extending laterally through its frame (16) and is mounted in the frame substantially parallel to each other A gas distribution device (15) on the upper side, which is in communication with the reactor gas inlet (7). 1 5 · If the plasma reactor in the first or second scope of the patent application, wherein: the coaxial or hollow wire is introduced into the plasma processing chamber [2 6] through the first electrode (13), microwave energy can be passed through the or hollow The wire is sent into the plasma processing chamber (2 6>. 1 6 · If the patent application for a patent garden] @ or the plasma reactor of item 2, the private electrode (1 3) and the plasma processing chamber (2 6) A flat element (3 2) made of a conductive substance is provided between the elements (3 2) and is conductively pressed with the electrode (1 3). The element (3 2) is provided with a plurality of openings. A method for plasma processing a substrate, wherein the plasma is excited in a plasma processing chamber, and the excited plasma is applied to the substrate located in the processing chamber substantially vertically, and is characterized in that: In the direction opposite to the direction in which the gas acts on the substrate, it is approximately perpendicular to the substrate. It is performed straight to the substrate. 1 8 · The method according to item 17 of the scope of patent application, wherein: the gas is introduced into the plasma through some openings. , The openings are distributed uniformly with respect to the surface of the substrate, and With a cross section of not more than 16 mm2, and preferably not more than about 4 mm2, and preferably not more than 2 · 5 sides 2. Obtained ash is willing to find home materials rewjX4-paper (τ_97 Mody) 4 —.-- ---- 《"------ Order ------- η (Please read the notes on the back before filling in this page)
TW87110618A 1997-06-30 1998-06-30 Plasma reactor having impact flow for the surface treatment TW384627B (en)

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