WO2019233750A1

WO2019233750A1 - Linear microwave plasma source having separated plasma chambers

Info

Publication number: WO2019233750A1
Application number: PCT/EP2019/062951
Authority: WO
Inventors: Joachim Mai
Original assignee: Meyer Burger (Germany) Gmbh
Priority date: 2018-06-06
Filing date: 2019-05-20
Publication date: 2019-12-12
Also published as: DE102018113444B3

Abstract

The invention relates to a linear microwave plasma source. The plasma source contains: - a microwave antenna surrounded by a dielectric tube; - a wall having at least one opening; and - at least one gas inlet. The opening is arranged on the side of the plasma source facing a substrate surface to be treated by means of a plasma treatment. According to the invention, the plasma source has at least one dividing wall, which runs from opposite sides of the wall to the dielectric tube and thus divides the chamber within the plasma source into at least two sub-chambers.

Description

Linear microwave plasma source with separate plasma spaces

The invention relates to a linear microwave plasma source with separate plasma spaces.

Linear microwave plasma sources consist of a rod-shaped microwave antenna, which is arranged in a dielectric tube and is therefore also referred to as an inner conductor of a coaxial conductor arrangement. The outer conductor is then formed by the generated plasma on the dielectric tube. This coaxial conductor arrangement is surrounded by a wall and thereby forms the actual plasma source. The wall of the plasma source in this case has on at least one side an opening through which the plasma exits the plasma source and in the vicinity of which a substrate to be treated is arranged outside the plasma source. The plasma source extends along the axis of the rod-shaped microwave antenna with a defined length, wherein the opening has a much smaller width compared to the length of the plasma source, so that it is referred to as a linear plasma source. Such plasma sources are described, for example, in DE 198 12 558 B4.

In the prior art linear microwave plasma sources, the space within the plasma source forms a continuous space in which the existing gases or gas fragments, for example plasma particles, can be distributed relatively freely.

In addition, plasma generation is greatly affected by ambient conditions in the plasma source, but, for example, in end portions of the linear microwave plasma source with respect to their extension along the axis of the microwave antenna from those in a central region of the plasma source with respect to their extent along distinguish the axis of the microwave antenna. Thus, the plasma treatments in these areas differ from each other, which can be detrimental to the homogeneity of the plasma treatment. However, it is difficult to compensate for the microwave power introduced into the respective area.

Plasma treatments, which are carried out with the aid of the plasma generated, are above all layer-separating processes such as CVD (chemical vapor deposition) or layer-removing processes, such as plasma etching. In both cases, often a first gas containing no or only a negligible chemically active component of the process carried out is introduced into the plasma source near the microwave antenna, while a second gas containing the chemically active component of the process is introduced near a substrate surface of the process to be treated Substrate is introduced into the plasma source. The space within the plasma source may be divided into two areas: a plasma generation area in which a plasma is generated from the gases used and which extends close and substantially radially symmetric to the microwave antenna, and a plasma treatment area in which the plasma generated in the plasma generation area the gas fragments formed there excite and convert the second gas to such an extent that the desired treatment of the substrate surface takes place. The plasma treatment zone is located substantially near the substrate surface and may extend beyond the actual space of the plasma source. Both areas can also partially overlap, but a substantial spatial separation is advantageous. The overlap area or area that connects the plasma generation area and the plasma treatment area is referred to as a connection area. Such a plasma treatment device is described, for example, in EP 3 309 815 A1. The first gas and / or the second gas may also be gas mixtures of different gases.

In the known from the prior art plasma treatment devices, however, a diffusion of components of the second gas from the plasma treatment zone in the direction of the plasma source, which may adversely affect the service life of the plasma source and / or on the quality of the treated substrate surface or a change in the Process conditions of the performed process leads. Thus, for example, in layer-depositing processes, a layer may be grown on the dielectric tube and / or the wall of the plasma source, which on the one hand influences the decoupling of the microwave power into the surrounding gas-filled space and thus the generation of the plasma and the process conditions of the method carried out, and secondly can lead to particle formation and thus a deterioration in the quality of the deposited on the substrate surface layer. In addition, the layer deposition on the dielectric tube and / or the wall is often asymmetric, because due to the diffusion direction more components of the second gas reach the substrate facing side of the dielectric tube and the wall of the plasma source than the side facing away from the substrate of the dielectric tube and the wall. This can lead to a poorly compensatable asymmetric change in the plasma generation conditions in the plasma source. As a result, the service life of the plasma source is limited, ie the plasma source must be cleaned frequently. This leads to productivity losses and, since some parts of the plasma source for cleaning or their replacement often have to be removed from the plasma treatment apparatus, to an increased effort in disassembly and assembly of the plasma source, for example. With respect to the vacuum tightness of Feedthroughs, etc. Feedthrough components of the second gas also have similar effects.

It is therefore an object of the present invention to provide a linear microwave plasma source, with which the disadvantages of the prior art can be avoided or reduced.

The object is achieved by a linear microwave plasma source according to claim 1. Preferred embodiments can be found in the subclaims.

The linear microwave plasma source according to the invention, hereinafter referred to as the plasma source, contains a microwave antenna surrounded by a dielectric tube, a wall with at least one opening and at least one gas inlet. The opening of the wall is arranged on the side of the plasma source which faces a substrate surface to be treated with a plasma treatment. In addition, the plasma source according to the invention further comprises at least one partition wall, which extends from opposite sides of the wall to the dielectric tube and thus divides the space within the plasma source into at least two subspaces. Since all subspaces adjoin the dielectric tube, the different subspaces may also be referred to as different plasma spaces. In this case, the partition wall extends so far in the direction of the dielectric tube and in the space of the plasma source, that a particle exchange between the various subspaces at a remaining gap between the dielectric tube and the at least one partition wall is negligible. The at least one partition wall adjoins the wall of the plasma source in a gas-tight manner, ie even there, there is no gas exchange or negligible gas exchange between the partial spaces, which is negligible for the overall process. Thus, different plasma conditions and / or gas compositions can be set in the subspaces of the plasma source or different functionalities can be separated from one another. As a result, for example, a subspace in which a coating process or a stripping process is to be carried out, and another subspace in which, for example, a plasma is generated or in which another coating process or another stripping process is to be carried out may be separated from each other and still be operated with a single linear microwave antenna. Thus, it is possible to generate in a first subspace a component of a process, for example a gas offset into the plasma state, which then in another, second subspace for a further functional part of the process, for example the excitation of a layer-separating or layer-removing Gases, used when a defined Gas passage from the first to the second subspace is possible. This allows different functional rooms or functionalities of a process to be separated from one another.

The partition wall is preferably made of an electrically non-conductive material, such as quartz glass, alumina, glass ceramic, plastic, etc. or of various suitable composite materials, but may also be made of an electrically conductive material, such as. Stainless steel, aluminum, graphite, etc. or conductive Coatings on different substrates, exist. Combinations of different materials, for example in the form of layered structures, mixtures or juxtaposed different material areas, are possible.

In a first embodiment, a first partition wall, which preferably consists of two parts, extends from two opposite sides of the wall of the plasma source to the dielectric tube and in one or more planes along the axis of the microwave antenna up to along the axis of the microwave antenna opposite sides of the wall. Here, the opening of the wall should be understood as a side of the wall. Thus, the first partition wall divides the space of the plasma source into two subspaces extending along the direction of the axis of the microwave antenna and juxtaposed parallel with respect to the axis of the microwave antenna, each of which adjoins only a portion of the circumference of the dielectric tube, but over the whole Length of the microwave antenna along the axis of the microwave antenna extend. Thus, for example, a subspace of the plasma source adjacent to the opening of the wall can be separated from a subspace that does not adjoin the opening of the wall when the partition wall is parallel or oblique to the plane of the opening. If the dividing wall runs perpendicular to the plane of the opening or at an angle thereto, but in such a way that both partial spaces adjoin the opening, then two partial spaces arranged laterally next to one another and extending along the length of the axis of the microwave antenna relative to the plane of the opening can be created.

In a particular embodiment of the first embodiment, a second partition wall is arranged in one of the first partitions separated by the first partition walls, extending from all sides of the wall in this first compartment up to the first partition wall along a plane transverse to the axis of the microwave antenna and extends to the dielectric tube. Thus, the second partition wall divides the first subspace of the plasma source into two second subspaces arranged side by side along the direction of the axis of the microwave antenna. In a second embodiment, a first partition wall extends along a plane transverse to the axis of the microwave antenna from the wall of the plasma source to the dielectric tube and surrounds it completely radially. Thus, the first partition wall divides the space of the plasma source into two subspaces juxtaposed along the direction of the axis of the microwave antenna, each adjoining the entire circumference of the dielectric tube, but extending only along part of the length of the microwave antenna along the axis of the microwave antenna ,

In a particular embodiment of the second embodiment, a second partition wall is arranged in one of the first partitions separated by the first partition walls, extending from two opposite sides of the wall of the plasma source each to the dielectric tube and in a plane along the axis of the microwave antenna up to the first partition wall and up to one of the first partition wall opposite side of the wall or a third partition wall which extends parallel to the first partition wall and is formed similar to this extends. Thus, the second partition wall divides the first subspace of the plasma source into two, parallel to the axis of the microwave antenna extending second subspaces, each of which adjoins only a portion of the circumference of the dielectric tube.

Each of the embodiments and configurations may have further partition walls, which further divide the first and possibly second subspaces.

If the plasma source has a partition wall extending along a plane along the axis of the microwave antenna, i. not transverse to this extends, so this plane preferably extends through the axis of the microwave antenna and thus divides the circumference of the dielectric tube into two equal parts.

In another preferred embodiment, such a partition wall extending along a plane along the axis of the microwave antenna, i. not transverse thereto, spaced apart by a distance greater than 0 and less than the radius of the dielectric tube to the axis of the microwave antenna.

In a particular embodiment, at least one of the partition walls has openings which allow gas to pass from one of the subspaces separated from one another by this partition wall into the adjacent subspace. The openings are in their shape, Size and distribution designed so that a defined gas exchange takes place between the adjacent subspaces, which is supported, for example, by appropriate pressure conditions or flow conditions in the respective subspaces during operation of the plasma source. Thus, for example, excited gas particles or gas fragments of a first gas, which is present in a first subspace, pass through the openings, while particles of a second gas, which is present in a second subspace, can pass only insignificantly through the openings.

In one embodiment, the plasma source further comprises at least one electrically conductive cylinder segment extending along the surface of the dielectric tube over at least a portion of the extent of the dielectric tube along the axis of the microwave antenna. "Along the surface" here means that the cylinder segment rests on the surface of the dielectric tube or is arranged at such a small distance from the surface of the dielectric tube that the formation of a plasma in the space between the dielectric tube and the cylinder segment is not possible or is negligible. This distance and the thickness of the cylinder segment are designed such that a passage of a necessary for the ignition of a plasma microwave power is prevented. The distance and the thickness are dependent on the power introduced into the microwave antenna and its frequency as well as the gas composition, the pressure and the material of the electrically conductive cylinder segment, and in particular its electrical conductivity. The cylinder segment acts as a coaxial outer conductor to the microwave antenna and prevents formation of a plasma in a radially adjacent to the outside of the cylinder segment space region of the plasma source. About the arc length of Zyindersegments the microwave power consumption in the respective subspace can be adjusted.

Preferably, at least one cylinder segment is attached to one of the at least one partition wall. Alternatively, a cylinder segment may also be attached to the wall of the plasma source or another holding device so that there is no connection to a dividing wall. Advantageously, the cylinder segments can also be formed from an electrically conductive tube, in which locally defined recesses define the areas open for microwaves for plasma generation. Such a tube is preferably connected at the ends of the linear plasma source to the wall of the plasma source.

In a particular embodiment, the plasma source comprises at least two rod-shaped microwave antennas which extend parallel to each other and each of a surrounded by dielectric tube. Each microwave antenna and its associated dielectric tube are referred to hereinafter as "plasma line". Furthermore, at least one of the dividing walls is arranged between the dielectric tubes and, together with at least one dividing wall, which adjoins the wall of the plasma source, subdivides the space of the plasma source into at least two partial spaces. In other words, the subdivision of the plasma space of a plasma source into two (or more) subspaces by means of a partition wall (or several partition walls) can also be realized for plasma sources with two (or more) plasmalines arranged side by side, with at least one partition wall between them extending dielectric tubes of the plasmalines. In this case, a subregion of the plasmalines is assigned to a subspace. For example. a first subregion of a first plasmaline and a first subregion of a second plasmaline a first subspace, while a second subregion of the first plasmaline and a second subregion of the second plasmaline are associated with a second subspace.

In a particular embodiment of the embodiment of the plasma plasma generator having a plurality of plasmalines, the plasma source further comprises at least one partition wall extending in a plane extending between two of the dielectric tubes and intersecting the plane of the partition wall disposed between these dielectric tubes. Such a dividing wall divides at least one subspace of the plasma source between the plasmalines, wherein the dividing wall, unlike the dividing wall, does not necessarily adjoin one of the dielectric tubes.

In a particular embodiment, the plasma source has two openings on opposite sides of the wall and at least one partition wall extending from two opposite sides of the wall connecting the two openings to the dielectric tube and extending along the axis of the microwave antenna. Thus, the space of the plasma source can be subdivided into two subspaces each adjacent to one of the two openings of the plasma source and into which a microwave power is fed from the microwave antenna.

In a particular embodiment, the plasma source in addition to the two openings of the wall just described also two rod-shaped microwave antennas extending parallel to each other and each surrounded by a dielectric tube, ie two plasmalines, on. The plasmalines are arranged one behind the other on a straight line connecting the two openings. In addition, at least two partition walls, each extending from two opposite sides of the wall, which are the two Connect openings together, extend to one of the dielectric tubes and extend along the axes of the plasmalines, arranged in the plasma source so that between the partition walls a partitioned from the openings part of the plasma source space is formed. As a result, the plasma source is subdivided into three subspaces, two of which adjoin one of the plasmalines and of which in turn only a subspace adjoins one of the openings. Thus, for example, an excited first gas can be generated within the subspace divided by the openings, which then possibly excites different second gases into the subspaces adjoining one of the openings and enables a corresponding plasma treatment of a substrate surface assigned to the respective opening.

In a particular embodiment of the plasma source, the plasma source further comprises a protective lining on the sides of the wall of the plasma source adjoining the opening. This protective lining reduces coating of the wall or attack of gas components on the wall and may be made of an electrically non-conductive material, such as quartz glass, glass ceramic, plastic or composite materials, etc., or an electrically conductive material, such as aluminum, stainless steel or graphite , exist, wherein different areas of the protective lining can also consist of different materials. A combination of different materials in the form of a layer structure or a fabric structure or any other form is possible. Dielectric areas of the protective lining are permeable to the microwave power introduced into the microwave antenna, while electrically conductive areas are impermeable to the microwave power, as has already been described with reference to the cylinder segments. The protective lining is preferably detachably connected to the wall of the plasma source. The protective lining thus lies against the surfaces of the plasma source to be protected, i. the wall, the partition wall and / or the dielectric tube and possibly other components of the plasma source, on that no plasma formation is possible between the protective lining and the surfaces to be protected. The protective lining can be composed of several individual parts and different materials. In a particular embodiment of this embodiment, at least one partition wall is an integral part of the protective lining. In other words, the protective lining is designed and arranged in the plasma source such that it fulfills the function of the partition wall and no separate partition wall is required.

In another particular embodiment of the plasma source, the plasma source further comprises a gas guide device which extends from at least one side of the wall of the plasma source into the space of the plasma source and at least over a partial area of the plasma source Extending the plasma source in the direction along the axis of the microwave antenna extends and reduces the width of a gas exchange open connection zone between adjacent to the dielectric tube plasma generating zone and the opening of the wall in this portion of the extension of the plasma source to a Plasmaqielle without Gasleitvorrichtung. The gas guiding device alters the flow behavior of the gases at least in a subspace of the plasma source with respect to a plasma source without a gas guiding device.

If the plasma source has such a gas guiding device and contains at least one dividing wall which extends in a plane parallel to the opening of the plasma source, then at least one gas inlet is preferably arranged between the plane of the dividing wall and the gas guiding device.

Preferably, in each case at least two gas inlets are arranged in at least two of the subspaces formed by the at least one partition wall according to the invention. Thus, each of the resulting subspaces can be supplied with a different gas. In this case, the term "gas" also means a gas mixture, it being possible for different gas mixtures to differ from the constituents of the gas mixture and / or their proportions.

As far as the different embodiments and embodiments of the plasma source according to the invention are not mutually exclusive, they can be freely combined with each other. The invention will be explained in more detail with reference to the figures. The sizes of the individual components as well as the distances between them are not shown to scale.

Show it:

1A shows a first embodiment of a first embodiment of the plasma source according to the invention in cross-section,

1 B shows the plasma source of FIG. 1A in a view along the line A - A ', FIG.

2A shows a second embodiment of the first embodiment of the plasma source according to the invention in cross section,

FIG. 2B shows the plasma source of FIG. 2A in a view along the line B-B '; FIG.

3A shows a first embodiment of a second embodiment of the plasma source according to the invention in cross-section,

3B shows the plasma source of FIG. 3A in a view along the line C-C ', FIG.

4A shows a further embodiment of the plasma source according to the invention in cross section 4B shows the plasma source of FIG. 4A in a view along the line DD ', FIG.

5A and 5B show further exemplary arrangements of partition walls with respect to the microwave antenna,

6A and 6B show exemplary arrangements of electrically conductive cylinder segments, FIG. 7A shows a first embodiment of a third embodiment of the plasma source with two plasmalines arranged next to one another, FIG.

7B shows a second embodiment of the third embodiment of the plasma source,

8A and 8B exemplary embodiments of the plasma source according to the invention with a protective lining of the wall,

9 shows an exemplary embodiment of the plasma source according to the invention with a gas guiding device,

10 shows an exemplary embodiment of the plasma source according to the invention two plasmalines arranged side by side and a gas guiding device,

11A shows an embodiment of the plasma source according to the invention with two openings,

Fig. 1 1 Legs embodiment of the plasma source according to the invention with two plasmalines and two openings and

12 shows a plasma treatment apparatus with a plurality of plasma sources according to the invention.

FIGS. 1A and 1B show a first embodiment of a first embodiment of the plasma source 1 according to the invention, which has a wall 10 with an opening 11. The opening 11 faces a substrate surface that is processed by a process performed with a plasma generated in the plasma source 1. Within the wall 10, a linear microwave antenna 12 is arranged, which has a circular shape in the illustrated cross section and extends rod-shaped along the y-axis. The microwave antenna 12 is surrounded by a dielectric tube 13, which has an annular cross-section and also extends along the y-axis. On the outer sides of the wall 10 magnetic devices 14 are arranged, which generate a magnetic field within the plasma source 1 and can be moved along the wall 10. However, the magnetic devices 14 are not necessarily part of the plasma source, but may not be present in other embodiments. On an upper side of the wall 10, which is opposite to the opening 11, a first gas inlet 15 a is arranged, through which a first gas is introduced into the plasma source 1. Next to the opening 11, second gas inlets 15b are arranged, through which, with the aid of gas lines, a second gas which, at least in the excited state, forms a layer-forming or layer-removing layer Having constituents, is admitted into the plasma source 1. Along the y-axis also a plurality of first gas inlets 15a and a plurality of second gas inlets 15b may be arranged.

From the gases used in a plasma generation region which extends substantially around the dielectric tube 13, a plasma is generated in the operating state of the microwave antenna 12. The plasma generated in the plasma generation region excites the second gas in a plasma treatment zone near the opening 11 to the extent that the desired treatment of the substrate surface takes place. The plasma generation region and the plasma treatment zone are interconnected by a connection zone in which hardly any plasma is newly generated and there is a reduced amount of the second gas relative to the plasma treatment zone. The extent and spatial shape of the plasma or of the plasma generation region, the connection zone and the plasma treatment zone is influenced by the arrangement, polarity and design of the magnetic device 14.

According to the invention, the plasma source 1 further includes a partition wall 2, which in the case shown comprises two parts 2a and 2b, each with respect to a plane passing through the axis of the microwave antenna 12 and perpendicular to a plane 1 1 1 of the opening 1 1 of the wall 10 adjoins opposite sides of the wall 10 and from there into the interior of the plasma source 1 to the dielectric tube 13 and the extent of the plasma source 1 in the direction along the axis of the microwave antenna 12, ie in the y-direction, extend and there also adjoin the wall 10 again. As can be seen in Figures 1A and 1B, a gap may remain between the dielectric tube 13 and the parts 2a, 2b of the partition wall 2, but narrow enough so that gas passage therethrough is negligible. In the illustrated embodiment of the first embodiment, the parts 2a and 2b of the partition wall 2 each extend in a plane parallel to the plane 1 1 1 of the opening 1 1, ie in an xy plane, and are gas-tight connected to the wall 10. The partition wall 2 thus divides the space of the plasma source 1, ie the space within the wall 10 and limited by the opening 1 1, in two subspaces 16 a and 16 b, which are functionally separated from each other and both to the dielectric tube 13, but only to one Part of the circumference of the dielectric tube 13, adjacent. In this case, the subspace 16a occupies the upper area of the space of the plasma source 1, ie the area which does not adjoin the opening 11, while the subspace 16b occupies the lower area of the space of the plasma source 1 adjoining the opening 11. The two subspaces 16a and 16b are thus arranged next to one another along the z-axis. As an alternative to the illustrated embodiment, the parts 2a and 2b in different planes, the parallel or obliquely to the plane 1 1 1 of Run opening 1 1, be arranged as long as the functional separation of the subspaces 16a and 16b is given.

The partition wall 2 has in the illustrated embodiment openings 21, which allow passage of gases, gas components or gas fragments from the subspace 16a in the subspace 16b. These openings 21 may have a circular shape in plan view, as shown in Fig. 1B, or any other regular or irregular other shape, e.g. oval, angular or the shape of a slot, and each extending over the entire thickness of the partition wall 2, i. penetrate them completely. The openings 21 may be uniformly or non-uniformly distributed over the extent of the partition wall 2 away. The shape and / or size of the openings 21 may differ between different openings 21 and, as well as the number of openings 21 and their distribution over the extent of the partition wall 2, depending on a desired gas passage freely selectable and can help be determined by simulations known in the art.

Although the subspaces 16a and 16b are no longer gas-tightly separated from one another by the openings 21, the partition wall 2 effects a functional separation of the two subspaces 16a and 16b, which, for example, pass through layer-separating or layer-removing gas constituents from the subspace 16b into the subspace 16a reduced or almost completely prevented under appropriate pressure and flow conditions. In this way, a layer deposition or a layer removal in the subspace 16a can be reduced or avoided, thereby extending the service life of the plasma source 1, influencing the plasma generation and the plasma treatment of a substrate surface better, above all independently, and improving the quality of the substrate treatment.

The parts 2a and 2b of the partition wall 2 can also be connected to each other in a region of the x-y plane and thus form a coherent structure.

If the dividing wall 2 is formed of a material which influences the propagation of a magnetic field, for example of a ferromagnetic material, further magnet devices 14 can be arranged on the wall 10, for example in the region of the partial space 16b, which controls the plasma formation and distribution in FIG affect the subspaces 16a and 16b in a desired manner. In FIG. 1B, in addition to the components of the plasma source 1 already mentioned, a holder 17, with which the dielectric tube 13 is fastened in the wall 10, is furthermore shown. The microwave antenna 12 is normally held in the axis of the dielectric tube 13 via not shown centering. In addition, a vacuum feed-through for components of the microwave antenna 12 or for the dielectric tube 13 as well as possibly electrical connections of the microwave antenna 12 can be integrated into the holder 17. The bracket 17 may also serve to secure the partition wall 2 or parts thereof.

In the embodiment of FIG. 1A, the plasma source 1 has a trapezoidal cross-section in which the upper side of the wall 10 opposite the opening 11 is parallel to the plane 1100 of the opening 11 and the lateral parts of the wall 10 are at an obtuse angle the upper side in the direction of the plane 1 1 1 of the opening 11 are rectilinear. However, the outer shape of the plasma source 1 is not limited to this shape, but may be arbitrary. Thus, for example, the plasma source may have the shape of a half cylinder or another round shape or a rectangular shape (in cross section) in the upper area.

Figures 2A and 2B show a second embodiment of the first embodiment of the plasma source 1, in which the dividing wall 2 extends with its parts 2a and 2b in a plane which passes through the axis of the microwave antenna 12 and perpendicular to the plane 1 1 1 of Opening 1 1 of the wall 10 is. That is, the partition wall 2 extends in a yz plane. The partition wall 2 adjoins the upper side of the wall 10, that is, the side of the wall 10 opposite the opening 11, and to the level 1 1 1 of the opening 1 1 and extends from there into the interior of the plasma source 1 up to the Dielectric tube 13 and the extent of the plasma source 1 in the direction along the axis of the microwave antenna 12, ie in the y-direction, and there again abuts against the wall 10 at. The partition wall 2 thus divides the space of the plasma source 1 again into two subspaces 16 a and 16 b, which are functionally separated from each other and both adjacent to the dielectric tube 13, but again only to a portion of the circumference of the dielectric tube 13. In this case, the partial space 16a occupies the left-hand area of the plasma source 1 space in FIG. 2A, while the partial space 16b occupies the right-hand area of the plasma source 1 space in FIG. 2A, both partial spaces 2a and 2b being adjacent to the opening 11. The two subspaces 16a and 16b are thus arranged next to one another along the x-axis. At least one first gas inlet 15a and near the opening 11 are arranged in the partial space 16a on the upper side of the wall 10, while in the partial space 16b on the upper side of the wall 10 at least one first gas inlet 15b and close to the opening 1 1 at least a second gas inlet 15d are arranged. As can be seen in FIG. 2B for the first gas inlet 15b, It is also possible for a plurality of first gas inlets 15a, 15b and / or a plurality of second gas inlets 15c, 15d to be arranged along the y-axis. Thus, in the two subspaces 16a and 16b, different gases can be introduced into the respective subspace 16a, 16b of the plasma source 1 via the first gas inlets 15a, 15b and the second gas inlets 15c, 15d, and different plasma processes can be carried out. In the case shown, no openings are arranged in the partition wall 2, so that the two partial spaces 16a, 16b, apart from a gas exchange across the opening 11, are completely separated from one another. In order to reduce gas exchange across the opening 11, the part 2b of the partition wall 2 may also extend further than the plane 11 1 of the opening 11. Alternatively, the part 2b of the partition wall 2 may be formed shorter, so that it ends above the plane 1 1 1 of the opening 1 1 and the plane 1 11 of the opening 11 is not touched.

As can be seen in FIG. 2B, the part 2b of the partition wall 2 can, for example, be connected to the holder 17 of the plasma source 1, i. near the wall 10, be connected to the part 2a of the partition wall 2, so that the partition wall 2 consists of one piece.

Again, the parts 2a and 2b of the partition wall 2 can again run in different planes, as long as the functional separation of the partial spaces 16a and 16b is given.

A first embodiment of a second embodiment of the plasma source 1 according to the invention is shown in FIGS. 3A and 3B, which has a partition wall 2 which extends in a plane which runs transversely to the axis of the microwave antenna 12. In this case, the partition wall 2 adjoins the wall 10 of FIG Plasma source 1 and the opening 11 at ind extends to the dielectric tube 13, which completely surrounds it radially. Thus, the partition wall 2 extends in an xz plane. Again, there is a small gap between the dielectric tube 13 and the partition wall 2. As can be seen in Figure 3B, there are two partition walls 2 along the extent of the plasma source 1 along the axis of the microwave antenna 12, ie along the y-axis are arranged, the space of the plasma source 1 is divided into three subspaces 16a, 16b and 16c, each adjacent to the opening 1 1 and the entire circumference of the dielectric tube 13 and are arranged side by side along the y-axis. In each of the subspaces 16a, 16b and 16c at least a first gas inlet 15a on the upper side of the wall 10 and at least two second gas inlets 15b near the opening 1 1 are arranged. This allows, for example, a different gas composition or different process guides in the individual subspaces 16a, 16b and 16c, whereby, for example, inhomogeneities in the plasma treatment of a substrate surface can be compensated. In the case shown are no openings in However, this is, as in all embodiments and embodiments of the plasma source in which it is not explicitly excluded and necessary for the functionality of the plasma source possible. The partition walls 2 can end as needed even before the opening 1 1 or even beyond.

Figs. 4A and 4B show another embodiment of the plasma source 1 in which the first and second embodiments, i. Partition walls, which extend along the axis of the microwave antenna 12, and dividing walls which extend transversely to the axis of the microwave antenna 12, are combined. Thus, the plasma source 1 has two parts 2a and 2b of a first partition wall extending in an x-y plane over the entire extent of the plasma source 1 along the axis of the microwave antenna 12, i. in the y direction, and thus divide the space of the plasma source 1 into two first subspaces, namely an upper subspace adjoining the upper side of the wall 10, and a lower subspace adjoining the opening 1 1. This is similar to the embodiment shown in Figs. 1A and 1B. In addition, the plasma source 1 has two second partition walls 2c each extending in a y-z plane and further subdividing the first partial spaces along the y-axis, similarly as described with reference to Figs. 3A and 3B. As a result, within the space of the plasma source 1, there are six second subspaces 16aa to 16bc, each functionally separated from the adjacent second subspaces 16aa to 16bc. In this case, the second subspaces 16aa to 16ac are arranged in the upper first subspace of the space of the plasma source 1, while the second subspaces 16ba to 16bc are arranged in the lower first subspace and adjoin respectively the opening 1 1. Thus, both the positive results of the first embodiment and the positive results of the second embodiment can be achieved simultaneously.

Of course, other or further combinations of partition walls within a plasma source 1 are possible.

Figures 5A and 5B show further exemplary arrangements of partition walls 2a to 2d with respect to a microwave antenna 12 and the dielectric tube 13. Thus, for example, through the partition walls 2a to 2c of Fig. 5A, a division of the periphery of the dielectric tube 13, and Thus, the output in the respective subspace 16a to 16c microwave power in three sub-areas, each associated with a specific subspace 16a to 16c, possible. At this time, the partition walls 2a and 2b extend in opposite directions away from the dielectric pipe 13, but in the same plane, while the partition wall 2c is perpendicular to the plane of the partition walls 2a and 2b. This is in the subspaces 16a and 16b in each case about one quarter of the circumference of the dielectric tube 13 for decoupling microwave power available, while in the subspace 16c approximately half of the circumference of the dielectric tube 13 is available. Of course, the partition walls 2a and 2b may also be arranged in different planes, so that any partitions of the circumference of the dielectric tube 13 to the individual subspaces 16a to 16c are possible. FIG. 5B also shows that the plane in which a partition wall extends does not necessarily have to pass through the axis of the microwave antenna 12. For example, the plane in which the partition walls 2a and 2b extend in the embodiment of FIG. 5B is arranged at a distance H from the axis of the microwave antenna 12 that is greater than 0 (zero) and smaller than the radius R of the dielectric tube 13 is. The additional dividing wall 2d now has four subspaces 16a to 16d, of which the subspaces 16a and 16b each adjoin less than a quarter of the circumference of the dielectric tube 13, while the subspaces 16c and 16d each cover more than one quarter of the circumference of the Dielectric tube 13 adjacent. By a suitable selection of the number and arrangement of the partition walls, the space of the plasma source can be almost arbitrarily divided into different functional subspaces and the plasma generation in the individual subspaces can be influenced.

Another possibility of influencing the plasma generation in the individual subspaces is shown in FIGS. 6A and 6B. In this case, 13 electrically conductive cylinder segments 3a and 3b are disposed near the surface of the dielectric tube, which prevent plasma generation in the region of the circumference of the dielectric tube 13 in which they are arranged. In this case, the cylinder segments 3a and 3b may be formed the same as shown in Fig. 6A, or cover different arc lengths of the periphery of the dielectric tube 13, as shown in Fig. 6B. In addition, the cylinder segments 3 a and 3 b may be distributed arbitrarily over the circumference of the dielectric pipe 13. They may, for example, be attached to partition walls 2a, 2b, respectively, as shown in Fig. 6A, or may be fixed to the wall 10 or a special mount without touching the dividing walls 2a, 2b, as shown in Fig. 6B is shown. The embodiment shown in Fig. 6B could also be realized by the formation of the cylinder segments 3a, 3b as parts of an electrically conductive tube which is mounted over the dielectric tube 13 and has openings. The openings in the tube would then represent the areas of the dielectric tube 13 not covered by the cylinder segments 3a and 3b. The electrically conductive tube is preferably connected at its ends to the wall 10. Of course, embodiments with more than the two cylinder segments 3a and 3b shown here or even with only one cylinder segment, which is arranged arbitrarily along the circumference of the dielectric tube 13, are possible. FIGS. 7A and 7B each show an embodiment of a third embodiment of the plasma source 1 with two plasmalines arranged next to one another. Each plasmaline consists of a rod-shaped microwave antenna and a surrounding dielectric tube. Thus, the microwave antenna 12a and the dielectric tube 13a form a first plasma line, while the microwave antenna 12b and the dielectric tube 13b form a second plasma line. In the third embodiment of the plasma source 1, this further has only one opening 1 1, wherein the axes of the plasma lines extend parallel to each other and in relation to the plane 1 1 1 of the opening 1 1 side by side. From the wall 10 of the plasma source 1, partition walls 2a, 2b extend to the dielectric tubes 13a, 13b of the plasmalines, as described with reference to FIG. 1A. The plasma source 1 now has an additional partition wall 2c which extends between the dielectric tubes 13a and 13b of the plasmaline. Together with the partition walls 2a and 2b, the partition wall 2c divides the space of the plasma source 1 into a partial space 16a and a partial space 16b, wherein the partial space 16a is not adjacent to the opening 11, as already described with reference to FIG. 1A , In addition, further partition walls 4 which further divide the space of the plasma source 1 may be arranged in the plasma source 1, as shown in FIG. 7B. In this case, such a partition wall 4, in contrast to the partition walls 2a to 2c so arranged that it is not adjacent to a dielectric tube 13a, 13b of one of the Plasmalines. For example. For example, the partition wall 4 may extend in a plane extending between the plasmalines and intersecting the partition wall 2c. In this case, the partition wall 4 can extend in both subspaces 16a and 16b, as shown in Fig. 7B, and thus further subdivide these subspaces, so that four subspaces 16aa to 16bb arise. Alternatively, the partition 4 may extend only in one of the subspaces 16a or 16b, so that only the corresponding subspace is further subdivided. Also, the partitions 4 each extend to the wall 10 and up to the level 1 1 1 of the openings 1 1 a and 1 1 b and up to a possibly existing partition wall, in this case the partition wall 2c, and adjoin gas-tight this one. Alternatively, the T wall 4 as required also before the level 1 1 1 of the openings 1 1 a and 1 1 b end or even beyond reach. Optionally, the partitions, similar to the partition walls, may have openings for a defined passage of gas from one compartment to another compartment. Such openings are not shown in Figs. 5A to 7B for both the partition walls 2a to 2d as well as for the partition wall 4, but possible.

Of course, also for the plasma sources with a plurality of plasmalines shown in FIGS. 7A and 7B, further dividing walls can be combined with the dividing walls 2a to 2c already shown, or other dividing walls can be arranged. Thus, for example, two Partition walls, which extend perpendicular to the plane 1 1 1 of the opening 1 1 and each extending along the axis of one of the microwave antennas 12a, 12b, are provided, as has been explained with reference to FIGS. 2A and 2B. Thus, the space of the plasma source 1 would be subdivided into three subspaces, of which the two lateral subspaces will be supplied with microwave power only by a part of the circumference of one of the plasmalines, while the middle subspace of parts of the peripheries of both plasmalines will be supplied with microwave power.

Figures 8A and 8B show further possible embodiments of the plasma source 1 according to the invention, these embodiments being similar to the embodiment described with reference to FIGS. 1A and 1B, but additionally a protective lining 5 of the wall 10 of the plasma source 1 in the opening 1 1 facing partial space 16b has. In addition, in FIGS. 8A and 8B, other external shapes of the plasma source 1 are shown as the previously shown trapezoidal shape. In addition, it is shown in Fig. 8A that the number of gas inlets 15a capable of supplying one or more gases into the compartment 16a and their arrangement and the number and arrangement of the magnetic devices 14 are not limited to the cases shown in the previous figures , but is arbitrarily expandable.

The protective lining 5 is arranged in the region of the partial space 16b along the sides of the wall 10 and the dividing wall 2 facing the partial space 16b and, in some embodiments, at least partially on the circumference of the dielectric tube 13 adjacent to the partial space 16b. In this case, between the protective lining 5 and the surfaces to be protected, so the wall 10, the partition wall 2 and the dielectric tube 13, a distance are present, however, which is such that a plasma generation in the space between the protective lining 5 and the present Protective surfaces is prevented. The protective lining 5 consists of an electrically conductive material, such as. Aluminum, stainless steel, graphite or carbon fiber material, or of a dielectric material, such as glass, glass ceramic, aluminum oxide or microwaveable plastics, and may also be made of a combination of materials in a layer structure , a mixture or fabric or areas made of different materials. Depending on the material of the protective lining 5, the coupling of microwave power is influenced by the microwave antenna 12 in the subspace 16b. Thus, in the embodiment shown in FIG. 8A, in which the protective lining 5 also completely covers the circumference of the dielectric tube 13 adjoining the partial space 16b, coupling of microwave power into the partial space 16b with an electrically conductive protective lining 5 is completely or almost completely prevented be done or almost unabated in a dielectric protective lining 5. The protective lining 5 can also be made consist of different parts, which in turn can consist of different materials.

The embodiment illustrated in FIG. 8B represents a combination of an electrically conductive protective lining 5 and a dielectric cylinder segment 52. In this case, the dielectric cylinder segment 52 completely covers the periphery of the dielectric tube 13 adjoining the partial space 16b, while the protective lining 5 covers only above a portion of the dielectric tube is arranged on the subspace 16b adjacent the periphery of the dielectric tube 13. In this partial area, the protective lining 5 acts similarly to an electrically conductive cylinder segment, which was explained with reference to FIGS. 6A and 6B.

The protective lining 5 has openings for the gas inlets 15b and openings 51, which correspond to openings 21 in the partition wall 2 and together with these allow a defined passage of gases and gas constituents from the subspace 16a into the subspace 16b. The openings 21, 51 can also be dimensioned such that charge carriers are also transported through from the plasma generation area.

The protective lining 5 and optionally the dielectric cylinder segment 52 protects the wall 10, the partition wall 2 and the dielectric tube 13 from direct interaction with plasma particles and in particular prevents the deposition of materials on the wall 10, the partition wall 2 or the dielectric tube 13 in the Area of subspace 16b. The layer deposition takes place instead on the protective lining 5 and possibly on the dielectric cylinder segment 52, which, however, are detachably connected to the wall 10, the partition wall 2 and possibly the dielectric tube 13 or rest only on this. Thus, the protective liner 5 and possibly the dielectric cylinder segment 52 are easily removable from the plasma source 1 when a critical coating thickness is reached, and can be cleaned outside the plasma source 1 and prepared for new use in the plasma source 1 or by new ones corresponding components are replaced.

If the protective lining 5 is mechanically stable enough and designed in a corresponding manner, it can also act alone as a partition wall in the sense of the application, so that no physically independent dividing wall 2, as shown in FIGS. 8A and 8B, is necessary ,

FIG. 9 shows an exemplary embodiment of a plasma source 1 according to the invention with a gas guiding device 6, the dividing wall 2 being similar, as with reference to FIGS. 1A and 1B explained, is executed. The gas-conducting device 6 is arranged in the subspace 16b and extends from the wall 10 into the subspace 16b, being initially parallel to the partition wall 2 and then adapted in a circular arc to the contour of the dielectric tube 13 at a distance from the partition wall 2 and to the dielectric tube 13 By its shape, the gas guide device 6 limits the extent of the connection zone 18 already described with reference to FIG. 1A, which has a plasma generation region 19 extending substantially radially around the dielectric tube 13 with a plasma treatment zone close to the opening 1 1 is formed, connects and changes the flow conditions within the subspace 16b. Thus, the gas guide 6 reduces a movement of gas components of a second gas, which is introduced via the gas inlets 15b in the subspace 16b, toward the dielectric tube 13 and the partition wall 2. As a result, in the case of a Schichtabscheidenden process, a coating of the dielectric tube 13 and the partition wall 2 reduced. In order to allow a good control of the flow conditions in the subspace 16b and to set conditions in the plasma generation region 19 which are favorable for plasma generation in the subspace 16b, additional gas inlets 15c are preferably arranged between the partition wall 2 and the gas guiding device 6 in the subspace 16b, as shown in FIG 9 can be seen. Preferably, via the additional gas inlets 15c, the first gas introduced into the compartment 16a via the gas inlet or inlets 15a is supplied, but another gas may be supplied.

The gas-conducting device 6 may consist of an electrically conductive or an electrically insulating material or of a combination of various suitable materials.

FIG. 10 shows an exemplary embodiment of a plasma source 1 according to the invention with two plasmalines arranged side by side and a gas guiding device 6, wherein, as explained with reference to FIG. 7B, a dividing wall 4 is also arranged between the plasmalines and the dividing wall 2 is also formed between the plasmalines is. In the illustrated case, the gas guide 6 extends straight from the wall 10 at an acute angle in the direction of the opening 1 1 out. On the partition 4 no parts of the gas-conducting device 6 are arranged in the illustrated case. However, this is also possible, so that in each subspace 16ab and 16bb to a plane which is perpendicular to the plane of the opening 1 1, symmetrical arrangement of the gas guiding device would be present.

In particular, in large lateral expansions of the opening 1 1 in the direction transverse to the axes of the plasmalines in a central region of the opening 1 1 a sufficient Gas supply of the second gas, which is admitted via the gas inlets 15 b, which are arranged near the opening 1 1, can be arranged on the partition 4 near the opening 1 1 at least one additional gas inlet 15 c, as shown in Fig. 10 is. Of course, another than the second gas can be supplied via the gas inlet 15c.

FIGS. 1 1A and 1 B each show a plasma source 1 with two openings 11a and 11b arranged opposite one another with respect to the axis of the microwave antenna 12 on the side of the plasma source 1. This plasma source 1 allows the simultaneous processing of two substrates or substrate composites, each of which is a substrate or substrate structure near one of the openings 1 1 a or 1 1 b is arranged or moved past there. In this case, in the plasma source 1 through the partition wall 2, which extend from the sides of the wall 10, which connect the openings 1 1 a and 1 1 b to each other, extend to the dielectric tube 13, again two functionally separate subspaces 16a and 16b educated. Thus, with the aid of one plasma source 1, different treatments of the respective substrates or substrate composites can also be carried out, for example by supplying different gases via the respective gas inlets 15aa and 15ab or 15ba and 15bb. With the aid of gas inlets 15aa and 15ba, which are arranged close to the dividing wall 2, gases are supplied which are optimal for plasma generation and have hardly any layer-separating or layer-removing constituents, whereas gas inlets 15ab or 15ab arranged near the respective opening 11a or 11b 15bb layer-separating or layer-removing gases are supplied. The partition wall 2 may or may not have openings, as shown in FIG. 1A. The magnetic devices 14 act simultaneously in both subspaces 16a and 16b.

The plasma source 1 shown in FIG. 11B has two plasma lines which, as already explained, each have a microwave antenna 12a or 12b and a dielectric tube 13a or 13b surrounding it. The plasmalines are arranged so that the axes of the microwave antennas 12a and 12b lie on a straight line connecting the two openings 11a and 11b. In the space of the plasma source 1, a first partition wall 2a extends from the wall 10 to the dielectric pipe 13a, while a second partition wall 2b extends from the wall 10 to the dielectric pipe 13b. In the illustrated case, the partition walls 2a and 2b are parallel to one another, but this is not absolutely necessary. With the aid of the partition walls 2a and 2b, the space of the plasma source 1 between the openings 11a and 11b is subdivided into three subspaces 16a, 16b and 16c. The subspaces 16a and 16b each adjoin only one of the plasmalines and only one of the openings 11a or 11b. The subspace 16c is arranged between the two plasma lines and the partition walls 2a and 2b and completely separated from the openings 11a and 11b. Gas inlets 15a are arranged in the subspace 16a, while gas inlets 15b are arranged in the subspace 16b. As shown, first of these gas inlets can be arranged close to the respective dividing wall 2a or 2b and serve to supply a gas which is optimally suitable but hardly layer-forming or layer-removing for plasma generation, while second gas inlets close to the respective opening 11a and 1, respectively 1 b are used to supply a layer-forming or layer-removing gas. In the subspace 16c further gas inlets 15c are arranged, which serve to supply a suitable for plasma generation gas. Thus, under optimal conditions, a plasma can be generated in the subspace 16c, the excited gas particles or gas fragments then entering through the openings 21 in the partition walls 2a and 2b in the respective subspace 16a and 16b and used there to excite a layer-forming or stratifying gas. At the same time, the subspace 16c is largely protected from coating processes, while optimum conditions can be set in the subspaces 16a and 16b, respectively, for the respective desired treatment of the substrate or of the substrate subassemblies. Each plasma line or each of the subspaces 16a and 16b can be assigned a separate magnetic device 14a or 14b, as shown in FIG. 11B. Further, in each of the partial spaces 16a and 16b, a protective lining 5 may be arranged, as described with reference to FIGS. 8A and 8B.

FIG. 12 shows a plasma treatment device 100 in which a plurality of plasma sources 1 a to 1 e according to the invention are shown. Each of the plasma sources 1 a to 1 e is formed in accordance with the embodiment explained with reference to FIG. 1A, but may also be formed according to the embodiment of FIG. 11B. As already explained with reference to FIGS. 1A and 1B, such plasma sources 1 a to 1 e can be used to process a plurality of substrates or substrate composites arranged at different levels in the plasma treatment device 100. For example, the bottoms of first substrates 200a, which are moved through the plasma processing apparatus 100 on a first plane, and simultaneously the tops of second substrates 200b, which passes through the plasma processing apparatus 100 on a second plane that is parallel to the first plane be treated with the aid of the plasma sources 1 a to 1 e. In the illustrated case, both substrates 200a and 200b move in the same direction along the x-axis through the plasma processing apparatus 100, but they may also move in the opposite direction. The plasma processing apparatus 100 has a plasma processing chamber 110 in which the plasma sources 1a to 1e are arranged. Through openings 120a and 120b, the substrates 200a and 200b can be introduced or discharged into the plasma treatment chamber 110. Within the plasma treatment chamber 110, the substrates 200a and 200b are transported by means of a moving device 130, which, for example, consists of a plurality of rotating shafts on which the substrates 200a and 200b rest. Furthermore, tempering devices 140 which heat or cool the substrates 200a or 200b can be arranged in the plasma treatment chamber 110. Furthermore, at the plasma treatment chamber 1 10 one or more Gasabpumpöffnungen 150, where, for example, one or more vacuum pumps and pressure regulating devices, are present, with which within the plasma treatment chamber 1 10 defined at least in terms of pressure atmosphere can be generated. Each of the plasma sources 1 a to 1 e may be associated with one (or more) additional Gasabpumpvorrichtung (s) and / or gas separation devices, which sets the optimal conditions within the plasma source 1 a to 1 e. Each of the plasma sources 1 a to 1 e, with respect to the supplied gases and gas flows and the plasma conditions that are dependent on pressure, microwave power introduced and frequency of the microwave power, one of the other plasma sources 1 a to 1 e different plasma treatment of the substrates 200 a and 200 b make , wherein the substrates 200a and 200b can also be treated differently in each of the plasma sources 1 a to 1 e by means of the partition walls present in the plasma sources 1 a to 1 e.

Components of the abovementioned possibilities for configuring the at least one partition wall and further components of the plasma source, such as, for example, partitions, protective coverings or gas-conducting devices, can also be combined with one another, as long as they do not exclude each other. In addition, the presented plasma source can be used with at least one partition wall in different types of plasma treatment apparatus and is not restricted to the case of a continuous-flow system shown here. Specified materials and sizes as well as the illustrated numbers and arrangements of individual components are only examples and do not represent an exhaustive enumeration or all possible embodiments. The optimal parameters for specific applications are available to a person skilled in the art with the aid of simulations, calculations or experimental arrangements without inventive step , reference numeral

1, 1 a - 1 e plasma source

10 wall of the plasma source

1 1, 1 1 a, 11 b opening of the wall

1 1 1 level of opening

12, 12a, 12b microwave antenna

13, 13a, 13b Dielectric pipe

14, 14a, 14b magnetic device

15a-15d, 15aa 15bb gas inlet

16a - 16c First subspace

16aa - 16bc Second subspace

17 bracket

18 connection zone

19 plasma generation zone

2, 2a-2d partition wall or parts thereof

21 Opening in dividing wall

3a, 3b Electrically conductive cylinder segment

4 partition

5 protective lining

51 Opening in protective lining

52 Dielectric cylinder segment

6 gas guiding device

100 plasma treatment device

1 10 plasma treatment chamber

120a, 120b openings for insertion and removal of a substrate

130 movement device

140 T emperiervorrichtung

150 gas exhaust opening

200a, 200b substrate

H distance between the plane of a partition wall and the axis of the

microwave antenna

R radius of the dielectric tube

Claims

claims

1. A microwave linear plasma source (1), wherein the plasma source (1) surrounded by a dielectric tube (13) microwave antenna (12), a wall (10) having at least one opening (11) and at least one gas inlet (15a-15d , 15aa-15bb), wherein the opening (11) is arranged on the side of the plasma source (1) facing a substrate surface to be treated by a plasma treatment, characterized in that the plasma source (1) has at least one partition wall (2) extends from opposite sides of the wall (10) to the dielectric tube (13) and thus divides the space within the plasma source into at least two subspaces (16a, 16b).

2. A linear microwave plasma source according to claim 1, characterized in that a first of the at least one partition wall (2) of two, with respect to the axis of the microwave antenna (12) opposite sides of the wall (10) of the plasma source (1) each to to the dielectric tube and in one or more planes along the axis of the microwave antenna (12) to sides of the wall (10) along the axis of the microwave antenna (12) and thus the space of the plasma source (1) in two, along the direction the axis of the microwave antenna (12) extending and parallel with respect to the axis of the microwave antenna (12) juxtaposed subspaces (16a, 16b), each of which adjoins only a portion of the circumference of the dielectric tube (13) divided.

3. A linear microwave plasma source according to claim 2, characterized in that in at least a first of the axis of the microwave antenna (12) juxtaposed partial spaces (16a, 16b) at least a second partition wall (2) is arranged, extending from all sides the wall (10) in the first subspace (16a) extends up to the first partition wall (2) along a plane transverse to the axis of the microwave antenna (12) and the dielectric tube (13) and thus the first subspace (16a) of the plasma source (16a) 1) in two, along the direction of the axis of the microwave antenna (12) juxtaposed second subspaces (16aa, 16ab) divided.

4. A microwave linear plasma source according to claim 1, characterized in that a first of the at least one partition wall (2) extends along a plane transverse to the axis of the microwave antenna (12) from the wall (10) of the plasma source (1) to the dielectric tube (13) and the dielectric tube (13) completely surrounds radially and thus the Space of the plasma source (1) in two, along the direction of the axis of the microwave antenna

(12) arranged side by side subspaces (16a, 16b) divided

5. Linear microwave plasma source according to claim 4, characterized in that in at least one first along the direction of the axis of the microwave antenna (12) juxtaposed partial spaces (16a, 16b) at least a second partition wall (2) is arranged, which differs from two opposite sides of the wall (10) of the plasma source (1) each to the dielectric tube and in one or more planes along the axis of the microwave antenna (12) to the first partition wall (2) and to one of the first partition wall (2) opposite side of the wall (10) or a third partition wall (2) which is parallel to the first partition wall (2) and is formed similar to this, and thus the first partial space (16a) of the plasma source (1) in two, parallel to Axis of the microwave antenna (12) extending second subspaces (16aa, 16ab) each adjacent only to a part of the circumference of the dielectric tube (13) divided.

A microwave linear plasma source according to claim 2, 3 or 5, characterized in that one of the planes in which one of the partial walls (2) extends along the axis of the microwave antenna (12) passes through the axis of the microwave antenna (12) ,

7. A microwave linear plasma source according to claim 2, 3 or 5, characterized in that one of the planes in which one of the partial walls (2) extends along the axis of the microwave antenna (12), with a distance greater than 0 and smaller than that Radius of the dielectric tube (13) to the axis of the microwave antenna (12) is arranged.

8. A linear microwave plasma source according to any one of the preceding claims, characterized in that at least one of the partition walls (2) has openings (21), the gas passage of one of these partition wall (2) separated from each other subspaces (16 a, 16 b) allow the adjacent subspace (16a, 16b).

9. Linear microwave plasma source according to one of the preceding claims, characterized in that the plasma source (1) further comprises at least one electrically conductive cylinder segment (3) extending along the surface of the dielectric tube

(13) extends at least over a portion of the extent of the dielectric tube (13) along the axis of the microwave antenna (12).

10. Linear microwave plasma source according to claim 9, characterized in that one of the at least one electrically conductive cylinder segment (3) on one of the at least one partition wall (2) is fixed.

1 1. A microwave linear plasma source according to any one of the preceding claims, characterized in that the plasma source (1) at least two rod-shaped microwave antennas (12a, 12b) which extend parallel to each other and each surrounded by a dielectric tube (13a, 13b) , wherein at least one of the partition walls (2) between the dielectric tubes (13a, 13b) is arranged and together with at least one partition wall (2) which is adjacent to the wall (10) of the plasma source (1), the space of the Plasma source (1) divided into at least two subspaces.

12. A linear microwave plasma source according to claim 1 1, characterized in that the plasma source (1) further comprises at least one T rennwand (4) which extends in a plane extending between two of the dielectric tubes (13 a, 13 b) and the plane of the partition wall (2) disposed between the dielectric tubes (13a, 13b) intersects.

13. A linear microwave plasma source according to any one of the preceding claims, characterized in that the plasma source (1) has two openings (1 1a, 11b) on opposite sides of the wall (10) and at least one partition wall (2) extending from two opposite sides of the wall (10) connecting the two openings (11a, 11b) to each other, extending to the dielectric tube (13) and extending along the axis of the microwave antenna (12).

14. A linear microwave plasma source according to claim 13, characterized in that the plasma source (1) two rod-shaped microwave antennas (12a, 12b) which extend parallel to each other and each of a dielectric tube (13a, 13b) are surrounded, and at least two partition walls (2a, 2b), wherein the microwave antennas (12a, 12b) on a straight line which connects the two openings (1 1a, 1 1 b) are arranged one behind the other and each having a partition wall (2a, 2b) from two opposite sides of the wall (10) interconnecting the two openings (11a, 11b) to one of the dielectric tubes (13a, 13b) and extending along the axes of the microwave antennas (12a, 12b), such that between the Partition walls (2 a, 2 b) one of the openings (11 a, 11 b) divided subspace (16 c) of the plasma source (1) is arranged.

15. Linear microwave plasma source according to one of the preceding claims, characterized in that the plasma source (1) further comprises a protective lining (5) to the opening (1 1) adjacent sides of the wall (10) of the plasma source (1)

16. Linear microwave plasma source according to one of claims 1 to 13, characterized in that the plasma source (1) further comprises a gas guide device (6) extending from at least one side of the wall (10) of the plasma source (1) in the space the plasma source (1) extends in at least a portion of the extent of the plasma source (1) along the axis of the microwave antenna (12) and the width of a gas exchange open connection zone (18) between a to the dielectric tube (13) adjacent plasma generating zone (19) and the opening (1 1) in this subregion of the expansion of the plasma source (1) relative to a plasma source without gas guide device reduced.

17. A linear microwave plasma source according to claim 16, characterized in that the plasma source (1) comprises at least one partition wall (2) extending in a plane parallel to the opening (1 1) of the plasma source (1), and between the plane the partition wall (2) and the gas guiding device (6) at least one gas inlet (15c) is arranged.

18. Linear microwave plasma source according to one of the preceding claims, characterized in that in at least two of the subspaces (16a, 16b) in each case at least one gas inlet (15a-15d, 15aa-15bb) is arranged.