WO1993005207A1 - Procede de formation de cristallites de diamant et article produit de cette maniere - Google Patents

Procede de formation de cristallites de diamant et article produit de cette maniere Download PDF

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Publication number
WO1993005207A1
WO1993005207A1 PCT/US1992/007439 US9207439W WO9305207A1 WO 1993005207 A1 WO1993005207 A1 WO 1993005207A1 US 9207439 W US9207439 W US 9207439W WO 9305207 A1 WO9305207 A1 WO 9305207A1
Authority
WO
WIPO (PCT)
Prior art keywords
nucleating layer
substrate
diamond
carbon
layer
Prior art date
Application number
PCT/US1992/007439
Other languages
English (en)
Inventor
R. P. H. Chang
Raymond J. Meilunas
Manfred M. Kappes
Shengzhong Liu
Original Assignee
Chang R P H
Meilunas Raymond J
Kappes Manfred M
Shengzhong Liu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chang R P H, Meilunas Raymond J, Kappes Manfred M, Shengzhong Liu filed Critical Chang R P H
Publication of WO1993005207A1 publication Critical patent/WO1993005207A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Abstract

Procédé permettant de former une couche de diamant sur un substrat, plus spécifiquement sur un substrat qui n'est pas lui-même du diamant. Dans ce procédé on améliore la formation des germes cristallins de diamant en créant une couche de nucléation comprenant un agglomérat de fullerène ou de carbone présentant une structure moléculaire géodésique sur le substrat. On met ensuite en contact la couche de nucléation et un plasma ou un autre gaz contenant du carbone, dans des conditions de température et de pression efficaces pour former des germes cristallins de diamant sur la couche de nucléation. Pendant cette mise en contact, le substrat est polarisé négativement par rapport au plasma pour envoyer les ions positivement chargés du plasma sur la couche de nucléation afin de stimuler la formation de cristallites de diamant.
PCT/US1992/007439 1991-09-03 1992-09-03 Procede de formation de cristallites de diamant et article produit de cette maniere WO1993005207A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US75373691A 1991-09-03 1991-09-03
US753,736 1991-09-03

Publications (1)

Publication Number Publication Date
WO1993005207A1 true WO1993005207A1 (fr) 1993-03-18

Family

ID=25031920

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1992/007439 WO1993005207A1 (fr) 1991-09-03 1992-09-03 Procede de formation de cristallites de diamant et article produit de cette maniere

Country Status (1)

Country Link
WO (1) WO1993005207A1 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2270326A (en) * 1992-09-03 1994-03-09 Kobe Steel Europ Ltd Growth of diamond films on silicon substrates with application of bias to substrate; tessellated patterns
WO1994027323A1 (fr) * 1993-05-06 1994-11-24 Kobe Steel Europe Limited Preparation de surfaces de silicium nucleees
WO1994026953A1 (fr) * 1993-05-17 1994-11-24 North Carolina State University Procede de fabrication de films de diamant orientes
EP0650465A1 (fr) * 1993-03-23 1995-05-03 GRUEN, Dieter M. Conversion de fullerenes en diamant
US5449531A (en) * 1992-11-09 1995-09-12 North Carolina State University Method of fabricating oriented diamond films on nondiamond substrates and related structures
EP0692552A1 (fr) * 1994-07-11 1996-01-17 Southwest Research Institute Méthode assistée par faisceau d'ions pour la production d'un revêtement en carbone dur amorphe
GB2300424A (en) * 1995-05-01 1996-11-06 Kobe Steel Europ Ltd Diamond growth on ion implanted surfaces
EP0890705A3 (fr) * 1997-07-09 1999-05-06 Baker Hughes Incorporated Trépan de forage avec élément de coupe ayant une surface de coupe en diamant nanocristallin

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0320657A1 (fr) * 1987-12-17 1989-06-21 General Electric Company Procédé de croissance de diamant
EP0343846A2 (fr) * 1988-05-27 1989-11-29 Xerox Corporation Procédé de fabrication de diamant polycristallin
US5006203A (en) * 1988-08-12 1991-04-09 Texas Instruments Incorporated Diamond growth method
GB2240114A (en) * 1990-01-18 1991-07-24 Stc Plc Film nucleation process for growing diamond film
US5132105A (en) * 1990-02-02 1992-07-21 Quantametrics, Inc. Materials with diamond-like properties and method and means for manufacturing them

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0320657A1 (fr) * 1987-12-17 1989-06-21 General Electric Company Procédé de croissance de diamant
EP0343846A2 (fr) * 1988-05-27 1989-11-29 Xerox Corporation Procédé de fabrication de diamant polycristallin
US5006203A (en) * 1988-08-12 1991-04-09 Texas Instruments Incorporated Diamond growth method
GB2240114A (en) * 1990-01-18 1991-07-24 Stc Plc Film nucleation process for growing diamond film
US5132105A (en) * 1990-02-02 1992-07-21 Quantametrics, Inc. Materials with diamond-like properties and method and means for manufacturing them

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS. vol. 59, no. 26, 23 December 1991, NEW YORK US pages 3461 - 3463 MEILUNAS ET AL 'nucleation of diamond films on surfaces using carbon clusters' *

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2270326A (en) * 1992-09-03 1994-03-09 Kobe Steel Europ Ltd Growth of diamond films on silicon substrates with application of bias to substrate; tessellated patterns
GB2270326B (en) * 1992-09-03 1996-10-09 Kobe Steel Europ Ltd Preparation of diamond films on silicon substrates
US5449531A (en) * 1992-11-09 1995-09-12 North Carolina State University Method of fabricating oriented diamond films on nondiamond substrates and related structures
US5849413A (en) * 1992-11-09 1998-12-15 North Carolina State University Oriented diamond film structures on nondiamond substrates
EP0650465A1 (fr) * 1993-03-23 1995-05-03 GRUEN, Dieter M. Conversion de fullerenes en diamant
EP0650465A4 (fr) * 1993-03-23 1997-05-21 Dieter M Gruen Conversion de fullerenes en diamant.
WO1994027323A1 (fr) * 1993-05-06 1994-11-24 Kobe Steel Europe Limited Preparation de surfaces de silicium nucleees
WO1994026953A1 (fr) * 1993-05-17 1994-11-24 North Carolina State University Procede de fabrication de films de diamant orientes
EP0692552A1 (fr) * 1994-07-11 1996-01-17 Southwest Research Institute Méthode assistée par faisceau d'ions pour la production d'un revêtement en carbone dur amorphe
GB2300424A (en) * 1995-05-01 1996-11-06 Kobe Steel Europ Ltd Diamond growth on ion implanted surfaces
EP0890705A3 (fr) * 1997-07-09 1999-05-06 Baker Hughes Incorporated Trépan de forage avec élément de coupe ayant une surface de coupe en diamant nanocristallin
US5954147A (en) * 1997-07-09 1999-09-21 Baker Hughes Incorporated Earth boring bits with nanocrystalline diamond enhanced elements

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