WO1990013137A1 - Appareil de pulverisation - Google Patents

Appareil de pulverisation Download PDF

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Publication number
WO1990013137A1
WO1990013137A1 PCT/GB1990/000633 GB9000633W WO9013137A1 WO 1990013137 A1 WO1990013137 A1 WO 1990013137A1 GB 9000633 W GB9000633 W GB 9000633W WO 9013137 A1 WO9013137 A1 WO 9013137A1
Authority
WO
WIPO (PCT)
Prior art keywords
target
array
axis
rotation
magnetic
Prior art date
Application number
PCT/GB1990/000633
Other languages
English (en)
Inventor
Arthur Mcgeown
Frank Keeble
Original Assignee
Ionic Coatings Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ionic Coatings Limited filed Critical Ionic Coatings Limited
Publication of WO1990013137A1 publication Critical patent/WO1990013137A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Definitions

  • This invention relates to magnetron sputtering apparatus.
  • a magnetron sputtering apparatus including a vacuum chamber, a target mounted on a platen, the target being disposed in the vacuum chamber on one side of the platen, a magnetic array mounted for rotation about an axis adjacent the other 5 side of the platen, the array being so configured and disposed relative to the target such that the magnetic field on the one side of the target at the axis of rotation is non-zero.
  • guass B H For a field strength of 100 to 300 guass B H is generally
  • the array is 20 constructed such that at some stage in each cycle the horizontal component (B H ) of magnetic field on the sputtered side of the target at every point of the target is non-zero and generally B H is at least 30% of B v at all points at some time during the cycle and it may be at least 50% of B v .
  • the target ⁇ may be generally circular in which case it may be co-axial w ⁇ th the axis of rotation and the array may be eccentric with respect to the axis. Alternatively the be eccentric with respect to the axis. Alternatively the array may be mounted for planetary motion about the axis or for a combination of linear and rotational movement relative to the axis.
  • the magnetic array may have inner and outer generally D-shaped pole pieces, in which case the axis of rotation preferably passes through close to the edge of the inner pole piece.
  • the magnetic array may comprise a plurality of pairs of pole pieces which sweep out circular tracks when they are rotated, the respective tracks being co-axial and circumjacent.
  • the magnetic array is disposed outside the vacuum chamber and is rotated directly by a motor.
  • the platen carrying the target may form at least part of the wall of the vacuum chamber and may be in the form of a heat sink.
  • the magnetic array may be mounted in its own separate support chamber, which can be partially evacuated to reduce the pressure drop across the platen and hence reduce the size required by the platen.
  • the invention consists in a magnetron sputtering apparatus including a vacuum chamber, a target disposed in the chamber, a magnetic array for forming a tunnel-shaped field passing through the target and a motor for rotating the array, the motor and the array being disposed outside the chamber.
  • the target is mounted on a heat sink platen which forms at least part of the wall of the chamber and the platen may be formed with an internal network of cooling passages.
  • Figure 1 is a part diagrammatic vertical section through a magnetron sputtering apparatus
  • Figure 2 is a diagrammatic view from above of a magnetic array for use in the apparatus of Figure 1;
  • Figure 3 is a further embodiment of a magnetic array
  • Figure 4 illustrates a still further embodiment of a magnetic array
  • Figure 5 illustrates an alternative "three dimensional array”.
  • the sputtering apparatus comprises a vacuum chamber 11 in which is disposed a support 12 for semi-conductor wafers or other substrates and a cathode 13.
  • the cathode 13 comprises a layer of target material 14 and a heat sink platen 15, which may be provided with an internal cooling circuit (not shown) .
  • the platen 15 forms part of one wall of the vacuum chamber 11.
  • the sputtering apparatus 10 is provided with a port 16 for evacuating the chamber and a further port 17 for introducing the plasma gas.
  • Means (not shown) for inducing the necessary electrical charges to strike the plasma within the chamber are provided.
  • the magnetic field is created which passes downwardly through the surface of the target, then parallel to the face of the target and finally back through it. Electrons are captured in this tunnel-shaped field and, under the influence of the magnetic and electric fields, collide with the gas atoms to produce ions. These ions are drawn down on to the face of the target in the area where the tunnel-shaped field extends through the target.
  • such a magnetic field is created by a magnetic array 18 which is mounted for rotation about an axis 19 on the shaft 20 of a motor 21. It will be noted that the array 18 is eccentric with respect to the axis 19 which in turn is co-axial with the target 14.
  • the design of the array 18 is such that for one cycle of operation the magnetic field adjacent any point in the target will be non-zero and will preferably be within the conditions for B v and B H mentioned above.
  • the axis of rotation should always pass through a point of non ⁇ zero field so as to ensure that there is no dead point on the target.
  • motor 21 and the array 18 are 5 disposed outside the main vacuum chamber and can be altered and serviced readily without interfering with the vacuum in that chamber.
  • the array 18 can conveniently be disposed in a further chamber 22 which can be evacuated
  • target material will tend to deposit on the target surface where erosion is low, causing contamination, particularly by generating particles.
  • the axis of rotation is at a point on the magnetic assembly where the field above the target has a parallel component of magnetic field greater than 50% of the perpendicular component.
  • the magnetic assembly also satisfies the above condition at the edge of the target; this is very difficult to achieve without the fringe fields around the circumference of the target causing spurious discharges in this region.
  • This proposal includes the use of an ancillary pole piece around the periphery of the target to suppress such fringing fields.
  • the array 18 comprises a link 24 which is rotatable about the axis 19 which carries a magnet 25 at its other end for rotation about a further axis 26. It will readily be appreciated that for one rotation about the axis 19 the whole area of the target may be swept out.
  • Figure 3 shows an alternative arrangement, for use with a generally rectangular configuration.
  • the magnet 25 is mounted on a pair of links 24 which can be rotated about
  • Figure 4 illustrates an array 18 comprising inner and outer pole pieces 30,31. Here the axis 19 passes through
  • the inner pole piece 25 the inner pole piece. It will be seen that the pole pieces are generally D-shaped although the edge 32 may be to an extent outwardly curved. Sometimes it is desired to treat a cylindrical surface using a cylindrical target. In this case the magnetic assembly 18 may be indicated in Figure 5.
  • One solution may be to have an array extending beyond the edge of the target, but preferably, as shown in Figure 1, subsidiary pole pieces 33 may be provided together with an anode 34, which prevents sputtering of parts other than the target.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Cette invention concerne des appareils de pulvérisation de magnétrons, généralement indiqués en (10), comportant une enceinte à vide dans laquelle est installé un support (12) pour des plaques de semiconducteurs et une cathode (13) portant la matière-cible (14). Une rangée magnétique (18) est placée pour tourner à l'extérieur de l'enceinte (11) afin de créer un champ non-zéro à ou à côté de tout point sur la cible pendant un cycle effectué par la rangée, qui peut tourner autour d'un axe (19) au moyen d'un moteur (21).
PCT/GB1990/000633 1989-04-27 1990-04-25 Appareil de pulverisation WO1990013137A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB898909747A GB8909747D0 (en) 1989-04-27 1989-04-27 Sputtering apparatus
GB8909747.1 1989-04-27

Publications (1)

Publication Number Publication Date
WO1990013137A1 true WO1990013137A1 (fr) 1990-11-01

Family

ID=10655887

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB1990/000633 WO1990013137A1 (fr) 1989-04-27 1990-04-25 Appareil de pulverisation

Country Status (2)

Country Link
GB (1) GB8909747D0 (fr)
WO (1) WO1990013137A1 (fr)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4415232A1 (de) * 1994-04-30 1995-11-02 Leybold Ag Beschichtungsanlage
DE4426200A1 (de) * 1994-07-23 1996-01-25 Leybold Ag Kathodenzerstäubungsvorrichtung
US5565071A (en) * 1993-11-24 1996-10-15 Applied Materials, Inc. Integrated sputtering target assembly
US5603816A (en) * 1993-11-24 1997-02-18 Applied Materials, Inc. Sputtering device and target with cover to hold cooling fluid
DE19722056A1 (de) * 1997-05-27 1998-12-03 Roland Dr Gesche Verfahren und Anordnung zum Herstellen dünner Schichten mittels Niederdruck-Gasentladung in einer Hohlkathode
US5876573A (en) * 1995-07-10 1999-03-02 Cvc, Inc. High magnetic flux cathode apparatus and method for high productivity physical-vapor deposition
US6221217B1 (en) 1995-07-10 2001-04-24 Cvc, Inc. Physical vapor deposition system having reduced thickness backing plate
US6340415B1 (en) 1998-01-05 2002-01-22 Applied Materials, Inc. Method and apparatus for enhancing a sputtering target's lifetime
WO2003100819A1 (fr) * 2002-05-21 2003-12-04 Applied Materials, Inc. Magnetron planetaire
DE10232179A1 (de) * 2002-07-16 2004-02-05 Infineon Technologies Ag PVD-Verfahren und PVD-Vorrichtung
US6841050B2 (en) 2002-05-21 2005-01-11 Applied Materials, Inc. Small planetary magnetron
DE4405747B4 (de) * 1993-05-04 2006-04-27 Unaxis Balzers Ag Magnetfeldunterstützte Zerstäubungsanordnung und hiermit ausgerüstete Vakuumbehandlungsanlage

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59173265A (ja) * 1983-03-22 1984-10-01 Fujitsu Ltd スパツタ装置
EP0169680A1 (fr) * 1984-07-20 1986-01-29 Varian Associates, Inc. Dispositif de gravure par pulvérisation au moyen d'un magnétron
JPS6199673A (ja) * 1984-10-15 1986-05-17 Tokuda Seisakusho Ltd スパツタ装置
EP0211412A2 (fr) * 1985-08-02 1987-02-25 Fujitsu Limited Appareil de pulvérisation magnétron planaire et sa source de champ magnétique
EP0213922A2 (fr) * 1985-08-26 1987-03-11 Varian Associates, Inc. Dispositif de pulvérisation cathodique planaire à mouvement combiné circonférentiel et radial des champs magnétiques
EP0248244A1 (fr) * 1986-06-06 1987-12-09 Leybold Aktiengesellschaft Cathode de pulvérisation du type à magnétron pour une installation de revêtement sous vide

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59173265A (ja) * 1983-03-22 1984-10-01 Fujitsu Ltd スパツタ装置
EP0169680A1 (fr) * 1984-07-20 1986-01-29 Varian Associates, Inc. Dispositif de gravure par pulvérisation au moyen d'un magnétron
JPS6199673A (ja) * 1984-10-15 1986-05-17 Tokuda Seisakusho Ltd スパツタ装置
EP0211412A2 (fr) * 1985-08-02 1987-02-25 Fujitsu Limited Appareil de pulvérisation magnétron planaire et sa source de champ magnétique
EP0213922A2 (fr) * 1985-08-26 1987-03-11 Varian Associates, Inc. Dispositif de pulvérisation cathodique planaire à mouvement combiné circonférentiel et radial des champs magnétiques
EP0248244A1 (fr) * 1986-06-06 1987-12-09 Leybold Aktiengesellschaft Cathode de pulvérisation du type à magnétron pour une installation de revêtement sous vide

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 10, no. 280 (C-374)(2336) 24 September 1986, & JP-A-61 99673 (TOKUDA SEISAKUSHO K.K.) 17 May 1986, see the whole document *
PATENT ABSTRACTS OF JAPAN vol. 9, no. 28 (C-264)(1751) 06 February 1985, & JP-A-59 173265 (FUJITSU K.K.) 01 October 1984, see the whole document *

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4405747B4 (de) * 1993-05-04 2006-04-27 Unaxis Balzers Ag Magnetfeldunterstützte Zerstäubungsanordnung und hiermit ausgerüstete Vakuumbehandlungsanlage
CN1058998C (zh) * 1993-11-24 2000-11-29 应用材料有限公司 溅射靶组合件及其制造方法
US5603816A (en) * 1993-11-24 1997-02-18 Applied Materials, Inc. Sputtering device and target with cover to hold cooling fluid
US5565071A (en) * 1993-11-24 1996-10-15 Applied Materials, Inc. Integrated sputtering target assembly
US5676803A (en) * 1993-11-24 1997-10-14 Demaray; Richard Ernest Sputtering device
US5529627A (en) * 1994-04-30 1996-06-25 Leybold Aktiengesellschaft Coating apparatus
DE4415232A1 (de) * 1994-04-30 1995-11-02 Leybold Ag Beschichtungsanlage
DE4426200A1 (de) * 1994-07-23 1996-01-25 Leybold Ag Kathodenzerstäubungsvorrichtung
US5538609A (en) * 1994-07-23 1996-07-23 Leybold Aktiengesellschaft Cathodic sputtering system
US6221217B1 (en) 1995-07-10 2001-04-24 Cvc, Inc. Physical vapor deposition system having reduced thickness backing plate
US5876573A (en) * 1995-07-10 1999-03-02 Cvc, Inc. High magnetic flux cathode apparatus and method for high productivity physical-vapor deposition
GB2318590B (en) * 1995-07-10 1999-04-14 Cvc Products Inc Magnetron cathode apparatus and method for sputtering
DE19722056A1 (de) * 1997-05-27 1998-12-03 Roland Dr Gesche Verfahren und Anordnung zum Herstellen dünner Schichten mittels Niederdruck-Gasentladung in einer Hohlkathode
US6340415B1 (en) 1998-01-05 2002-01-22 Applied Materials, Inc. Method and apparatus for enhancing a sputtering target's lifetime
US6841050B2 (en) 2002-05-21 2005-01-11 Applied Materials, Inc. Small planetary magnetron
US6852202B2 (en) 2002-05-21 2005-02-08 Applied Materials, Inc. Small epicyclic magnetron with controlled radial sputtering profile
WO2003100819A1 (fr) * 2002-05-21 2003-12-04 Applied Materials, Inc. Magnetron planetaire
US7169271B2 (en) 2002-05-21 2007-01-30 Applied Materials, Inc. Magnetron executing planetary motion adjacent a sputtering target
US7807030B2 (en) 2002-05-21 2010-10-05 Applied Materials, Inc. Small scanned magentron
DE10232179A1 (de) * 2002-07-16 2004-02-05 Infineon Technologies Ag PVD-Verfahren und PVD-Vorrichtung
US7022209B2 (en) 2002-07-16 2006-04-04 Infineon Technologies Ag PVD method and PVD apparatus
DE10232179B4 (de) * 2002-07-16 2009-01-08 Qimonda Ag PVD-Verfahren

Also Published As

Publication number Publication date
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