WO1990006381A1 - Produit metallique perfore obtenu par attaque, procede de formation de depart pour un tel produit et procede d'attaque - Google Patents

Produit metallique perfore obtenu par attaque, procede de formation de depart pour un tel produit et procede d'attaque Download PDF

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Publication number
WO1990006381A1
WO1990006381A1 PCT/NL1989/000085 NL8900085W WO9006381A1 WO 1990006381 A1 WO1990006381 A1 WO 1990006381A1 NL 8900085 W NL8900085 W NL 8900085W WO 9006381 A1 WO9006381 A1 WO 9006381A1
Authority
WO
WIPO (PCT)
Prior art keywords
etching
deposit
metal
factor
starting material
Prior art date
Application number
PCT/NL1989/000085
Other languages
English (en)
Inventor
Henricus Hermanus Wilhelmus Thuis
Original Assignee
Stork Screens B.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stork Screens B.V. filed Critical Stork Screens B.V.
Publication of WO1990006381A1 publication Critical patent/WO1990006381A1/fr
Priority to KR1019900701564A priority Critical patent/KR900702078A/ko

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B07—SEPARATING SOLIDS FROM SOLIDS; SORTING
    • B07B—SEPARATING SOLIDS FROM SOLIDS BY SIEVING, SCREENING, SIFTING OR BY USING GAS CURRENTS; SEPARATING BY OTHER DRY METHODS APPLICABLE TO BULK MATERIAL, e.g. LOOSE ARTICLES FIT TO BE HANDLED LIKE BULK MATERIAL
    • B07B1/00—Sieving, screening, sifting, or sorting solid materials using networks, gratings, grids, or the like
    • B07B1/46—Constructional details of screens in general; Cleaning or heating of screens
    • B07B1/4609—Constructional details of screens in general; Cleaning or heating of screens constructional details of screening surfaces or meshes
    • B07B1/4618—Manufacturing of screening surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B07—SEPARATING SOLIDS FROM SOLIDS; SORTING
    • B07B—SEPARATING SOLIDS FROM SOLIDS BY SIEVING, SCREENING, SIFTING OR BY USING GAS CURRENTS; SEPARATING BY OTHER DRY METHODS APPLICABLE TO BULK MATERIAL, e.g. LOOSE ARTICLES FIT TO BE HANDLED LIKE BULK MATERIAL
    • B07B1/00—Sieving, screening, sifting, or sorting solid materials using networks, gratings, grids, or the like
    • B07B1/46—Constructional details of screens in general; Cleaning or heating of screens
    • B07B1/4609—Constructional details of screens in general; Cleaning or heating of screens constructional details of screening surfaces or meshes
    • B07B1/469—Perforated sheet-like material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C23F1/04—Chemical milling
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals

Definitions

  • Perforated metal product obtained by etching, process for forming starting material therefor and etching process
  • the present invention relates firstly to a metal screen material which is obtained by photoetching star ⁇ ting from an unperforated material.
  • a perforated material of this type is obtained by depositing a photoresist pattern on a metal base and then etching away the parts not covered by the photoresist pattern with the aid of an etchant such as FeCl 3 .
  • the object of the invention is to provide a screen material of the type referred to in the preamble having a high degree of fineness accompanied by large thickness.
  • a material of this type is characterized in that the cross-sectional area of each of the openings in the screen material varies over the thickness according to a predetermined pattern as a function of a ratio between the final etching depth and the length of the lateral etching under the edge of an etch pattern (the etching factor) of between 1,5 and 5.
  • the etching factor the etching factor
  • the etching factor is defined as the ratio between the final etching depth and the length of lateral etching under a photoresist pattern and is in general equal to 1.5, i.e. an etching of approximately 33 micrometres also occurs in the lateral direction for an etching of 50 micrometres in the depth direction.
  • the etching factor by means of the composition of the metal to be etched in a manner such that the depth etching proceeds more rapidly than the lateral etching, in other words, an etching factor of greater than 1.5 is achieved.
  • the cross-sectional area varies in accordance with an etching factor of between 1.8 and 4.0.
  • the material composition may advantageously be such that two patterns are obtained by etching, each of the patterns extending from one side of the material over a part of the thickness of the material.
  • the etching patterns obtained with double-sided etching are mirror images and adjoin each other and each extend over an equal part of the thickness of the material, for example half thereof.
  • the starting material for the screen material may also be constructed in a manner such that there is a central material layer which does not contain any substances which influence the etching factor or contains a fixed concentration thereof, while said central layer is clad with material which does in fact contain a structured concentration variation of sub ⁇ stances which influence the etching factor.
  • Said mater ⁇ ial layers may have different thickness but may also be of equal thickness.
  • the concentration patterns of substance which influences the etching factor may be identical or different in the two cladding layers on either side of the central layer.
  • the screen material accor ⁇ ding to the invention may have a variety of forms, it being possible to vary the cross-sectional area of the openings over the thickness of the material as desired. In this manner, a metal screen material can be obtained which combines a large thickness with a high degree of fineness.
  • the invention also relates to a process for forming a metal starting material for use in manufac ⁇ turing a screen material by photoetching, in which process the starting material is formed by electrolyti- cally depositing metal on amandrel, followedby removal of a metal deposit from the mandrel, which is characterized in that the metal deposit is obtained by using an electro ⁇ lytic bath which contains one or more substances which influence the etching factor of the metal deposit formed, and the concentration of substance influencing the etching factor is varied according to a predetermined pattern during the forming of the deposit.
  • the etching factor may be adjusted between 1.5 and 5, in particular between 1.8 and 4, as desired by choosing a suitable concentration variation of substance influencing the etching factor.
  • the substance which influences the etching factor is chosen from the group comprising butynediol, ethylene- cyanohydrin and disodium metabenzenedisulphonic acid.
  • the concentration of substance influencing the etching factor in the metal deposit increases in a direction which is opposite to the etching direction.
  • the result is achieved that the top of a perforation is only slightly larger than the opening in the associated etching pattern and that it is even possible to obtain a hole with walls extending virtually parallel to the etching direction or even walls receding in the etching direction.
  • a starting material is formed by electrolyti- cally depositing a base deposit which does not contain any substance which, influences the etching factor or contains a fixed concentration thereof and said base layer is thickened in a bath or a series of consecutive baths, the concentration of substance influencing the etching factor being varied according to a predetermined pattern in said bath or in said series of consecutive baths.
  • the concentration of substance influencing the etching factor can be increased with time during growth in order to ensure that the highest concentration of substance influencing the etching factor is situated at the surface which first comes into contact with the etching liquid.
  • a concentration variation of this type may also be present in a series of consecutive baths in which a part of the thickening operation is carried out in each case.
  • the base deposit is removed from the mandrel onwhich it is formed, after which said base deposit is subjected, after clamping, to a thickening operation or a series of consecutive thicken ⁇ ing operations in a series of baths containing an increasing concentration of substance influencing the etching factor.
  • the concentra ⁇ tion of substance influencing the etching factor should, on the one hand, be increased to compensate for the loss of said substance by incorporation in the deposit, while on the other hand, an additional increase is necessary to provide the desired concentration profile of substance influencing the etching factor during the build up of the metal layer.
  • the basic deposit removed from a mandrel is providedwith a metal deposit on two sides in a thickening operation, a suitable predetermined concentration variation of substance influencing the etching factor being formed in said metal deposit.
  • a basic deposit of this type clad on two sides may alsobe left on themandrel for cladding on one side, after which the basic layer thus thickened on one si d e is removed from the mandrel and the other side is provided with a deposit; this procedure can be used, in particular, in the case of flat sheet-type screen mate ⁇ rials.
  • the invention also relates to an etching procedure for forming a metal screen material, in which etching procedure a metal starting material is provided with an etch resist pattern, after which etching is carried out, which etching procedure is characterized in that a starting material is used as starting material which is obtained with the aid of the procedure according to the invention as described above.
  • Figure 1 is a graph of the normal concentration varia- tion of substance influencing the etching factor over the thickness of a deposit as a consequence of depletion of the electrolysis bath.
  • Figure 2 is a concentration variation of substance influencing the etching factor as a consequence of extra additions during the growth operation.
  • Figure 3 shows diagrammatically a hole in a metal deposit formed by etching.
  • Figure 4 shows diagrammatically the variation of the etching process while forming a screen material according to the invention.
  • Figure 5 shows a cross section of an opening which has been etched in a base deposit clad with metal on two sides.
  • Figure 1 shows the concentration variation of substance influencing the etching factor over the thick ⁇ ness of a metal deposit formed by electrodeposition.
  • the metal deposit may be composed, for example, of nickel, butynediol being used as substance influencing the etching factor.
  • Figure 2 shows the concentration variation in a metal deposit when the procedure according to the inven- tion is used, the bath concentration being increased in a controlled manner during the growth of the deposit in order to compensate for depletion and to provide an increase in concentration in the metal deposit during the deposition thereof. It can be seen that the concentration has risen to C E for the final thickness D E .
  • the starting material is formed by forming a thickening metal layer on a base deposit having a thickness D B so that the resultant total thickness of the material is D E after the deposition process.
  • Figure 3 indicates that a cavity has been etched in a metal deposit 1 composed, for example, of nickel or copper on which there is a resist pattern having an opening therein through which etching liquid, for example FeCl 3 , can reach the metal. It can be seen that an underetching has taken place over a length O for the final etching depth D.
  • the etching factor is now defined as D/0, a factor of 1 to 1,5 being usual under normal conditions without special measures being taken, whereas values between 1,5 and 5 can be achieved at every point over the etching depth according to the invention.
  • a base deposit 40 was first formed on a mandrel, after which a thickening deposit 41 was formed on the base deposit using a bath or a series of baths in order to ensure that a pre-required concentration variation of substance influencing the etching factor is present in the deposit, in which case the highest concentration of substance influencing the etching factor will be situated at the side of the deposit which is opposite to the base layer 40 and which forms the top of the thickening deposit.
  • a photoresist pattern 42 with openings 46 therein is applied to the top of the metal deposit.
  • An etching liquid for example FeCl 3
  • the etching operation forms an opening 47, the course of the etching process being indicated by the broken lines. It can be seen that in this case a large etching depth is combined with a relatively low underetching of the photoresist pattern 42.
  • Figure 5 shows the cross section of a hole which has been formed in a metal deposit using a double-sided etching operation.
  • the metal deposit is composed of a base layer 50 on which metal deposits 51 and 52 have been formed on two sides, the base deposit 50 not containing any substance influencing the etching factor while a desired concentration variation of substance influencing the etching factor is provided in the thickening deposits 51 and 52.
  • a photoresist pattern 53 or 54 respectively is formed on both sides and this contains openings 55 and 56 situated opposite each other. Etching now forms the opening " 57, the concentration variation of substance influencing the etching factor in the layers 51 and 52 being adjusted so that a very low degree of underetching is combined with a large depth etching.
  • the screen material formed in Figure 5 has a total thickness of, for example, 1300 micrometres, the base deposit being 100 micrometres thick, with a deposit 600 micrometres thick being grown thereon.
  • the pitch spacing of the openings 55 and 56 was, in a typical case, 1,000 micrometres, so that the final degree of fineness of the screen material obtained is approximately 25 mesh (the mesh number indicates the number of openings in a screen material per linear inch) .
  • the screen material was composed of nickel, while the substance influencing the etching factor in the layers 51 and 52 was butynediol. While the layers 51 and 52 were being formed, the concentration of butynediol in the bath used was allowed to increase from 0 mg/1 to 180 mg/1. The etching factor achieved at the end of the etching was 2.7 on both sides.
  • the substrates described here may have either a flat shape or a cylin- drical shape.
  • the base material used may have a thickness of up to approximately 200 micrometres.
  • a thickening layer with good adhesion is then deposited.
  • the photoresist pattern is formed on the basis of generally known photolithographic methods for forming an etch resist pattern, for example using a photoresist.
  • etch resist pattern use may also be made of a laser engraving procedure in which the portions of a continuous resist layer through which the etching liquid has later to come into contact with the metal base has been burned away with the aid of a laser.
  • a laser exposure method can also be used in which parts of a continuous photosensitive layer are selectively cured or rendered chemically soluble using a negative-working or positive-working photoresist suitable for this purpose.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Electrochemistry (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

La présente invention décrit un matériau pour cribles en métal obtenu par photoattaque, dont le rapport entre la profondeur d'attaque et la longueur de l'attaque latérale est compris entre 1,5 et 5, ce rapport étant le facteur d'attaque. Est également décrit un procédé qui permet de produire un matériau de départ en métal pour la fabrication d'un tel matériau pour cribles par auto-attaque et dans lequel le matériau de départ est formé par électro-déposition de métal à partir d'un bain contenant une ou plusieurs substances qui exercent sur le facteur d'attaque une influence le portant vers des valeurs plus élevées. Pour obtenir un facteur d'attaque élevé, la concentration dans le dépôt de la substance utilisée est amené à augmenter dans un sens opposé à celui de l'attaque. Des brillanteurs de classe I et de classe II notamment, sont des substances appropriées.
PCT/NL1989/000085 1988-11-28 1989-11-20 Produit metallique perfore obtenu par attaque, procede de formation de depart pour un tel produit et procede d'attaque WO1990006381A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900701564A KR900702078A (ko) 1988-11-28 1990-07-20 부식에 의해 수득된 천공금속 제품, 그에 대한 출발원료의 성형방법 및 부식방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8802927A NL8802927A (nl) 1988-11-28 1988-11-28 Zeefmateriaal uit metaal verkregen door fotoetsen, werkwijze voor het vormen van uitgangsmateriaal daarvoor en etswerkwijze.
NL8802927 1988-11-28

Publications (1)

Publication Number Publication Date
WO1990006381A1 true WO1990006381A1 (fr) 1990-06-14

Family

ID=19853299

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/NL1989/000085 WO1990006381A1 (fr) 1988-11-28 1989-11-20 Produit metallique perfore obtenu par attaque, procede de formation de depart pour un tel produit et procede d'attaque

Country Status (8)

Country Link
EP (1) EP0445209A1 (fr)
JP (1) JPH04502036A (fr)
KR (1) KR900702078A (fr)
AU (1) AU4805390A (fr)
CA (1) CA2003950A1 (fr)
NL (1) NL8802927A (fr)
WO (1) WO1990006381A1 (fr)
ZA (1) ZA898560B (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1421995A1 (de) * 1961-12-06 1969-01-23 Kewanee Oil Co Verfahren zur galvanischen Herstellung von korrosionsbestaendigen Duplexnickelschichten
FR2083411A1 (fr) * 1970-03-19 1971-12-17 Siemens Ag
US3679500A (en) * 1970-08-07 1972-07-25 Dainippon Screen Mfg Method for forming perforations in metal sheets by etching
EP0049022A1 (fr) * 1980-09-30 1982-04-07 Veco Beheer B.V. Procédé pour la fabrication par électrolyse de matériau perforé et matériau perforé ainsi obtenu
EP0110463A1 (fr) * 1982-11-12 1984-06-13 Stork Screens B.V. Electroformage d'un produit métallique et produit métallique ainsi obtenu

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1421995A1 (de) * 1961-12-06 1969-01-23 Kewanee Oil Co Verfahren zur galvanischen Herstellung von korrosionsbestaendigen Duplexnickelschichten
FR2083411A1 (fr) * 1970-03-19 1971-12-17 Siemens Ag
US3679500A (en) * 1970-08-07 1972-07-25 Dainippon Screen Mfg Method for forming perforations in metal sheets by etching
EP0049022A1 (fr) * 1980-09-30 1982-04-07 Veco Beheer B.V. Procédé pour la fabrication par électrolyse de matériau perforé et matériau perforé ainsi obtenu
EP0110463A1 (fr) * 1982-11-12 1984-06-13 Stork Screens B.V. Electroformage d'un produit métallique et produit métallique ainsi obtenu

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
CHEMICAL ABSTRACTS, Vol. 95, No. 6, 10 August 1981, (Columbus, Ohio, US), page 255, abstract no. 47226e, & JP-A-56 003 676 (Toyo Kohan Co., Ltd), 14 January 1981 *
Galvanotechnik, Vol. 69, No. 11, November 1978, (Saulgau, DE), A.F. BOGENSCHUTZ et al.: "Prazisionsatzen von Leiterplatten durch Verwendung von Benzotriazol als Flankenschutzmittel", pages 960-970 *

Also Published As

Publication number Publication date
KR900702078A (ko) 1990-12-05
JPH04502036A (ja) 1992-04-09
CA2003950A1 (fr) 1990-05-28
ZA898560B (en) 1990-08-29
NL8802927A (nl) 1990-06-18
AU4805390A (en) 1990-06-26
EP0445209A1 (fr) 1991-09-11

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