WO1988004333A1 - Production of silicon carbide - Google Patents

Production of silicon carbide Download PDF

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Publication number
WO1988004333A1
WO1988004333A1 PCT/GB1987/000880 GB8700880W WO8804333A1 WO 1988004333 A1 WO1988004333 A1 WO 1988004333A1 GB 8700880 W GB8700880 W GB 8700880W WO 8804333 A1 WO8804333 A1 WO 8804333A1
Authority
WO
WIPO (PCT)
Prior art keywords
process according
silicon
substrate
hydrocarbon
silane
Prior art date
Application number
PCT/GB1987/000880
Other languages
English (en)
French (fr)
Inventor
Michael John Thwaites
Original Assignee
The British Petroleum Company P.L.C.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The British Petroleum Company P.L.C. filed Critical The British Petroleum Company P.L.C.
Publication of WO1988004333A1 publication Critical patent/WO1988004333A1/en
Priority to KR1019880700953A priority Critical patent/KR890700175A/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
PCT/GB1987/000880 1986-12-10 1987-12-04 Production of silicon carbide WO1988004333A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019880700953A KR890700175A (ko) 1986-12-10 1988-08-09 실리콘 카바이드의 제조방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8629496 1986-12-10
GB868629496A GB8629496D0 (en) 1986-12-10 1986-12-10 Silicon carbide

Publications (1)

Publication Number Publication Date
WO1988004333A1 true WO1988004333A1 (en) 1988-06-16

Family

ID=10608765

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB1987/000880 WO1988004333A1 (en) 1986-12-10 1987-12-04 Production of silicon carbide

Country Status (5)

Country Link
EP (1) EP0295272A1 (ja)
JP (1) JPH01502182A (ja)
KR (1) KR890700175A (ja)
GB (1) GB8629496D0 (ja)
WO (1) WO1988004333A1 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0445319A1 (en) * 1990-03-05 1991-09-11 International Business Machines Corporation Process for fabricating silicon carbide films with a predetermined stress
EP0521473A1 (de) * 1991-07-02 1993-01-07 Daimler-Benz Aktiengesellschaft Mehrschichtige, kristallines Siliziumkarbid enthaltende Zusammensetzung
EP0538611A1 (de) * 1991-10-24 1993-04-28 Daimler-Benz Aktiengesellschaft Mehrschichtige Zusammensetzung mit einer Schicht aus monokirstallinem Beta-Siliziumkarbid
GB2267291A (en) * 1992-05-27 1993-12-01 Northern Telecom Ltd Integrated circuits; depositing silicon compounds using excess hydrogen
EP0632145A2 (en) * 1993-07-01 1995-01-04 Dow Corning Corporation Method of forming crystalline silicon carbide coatings
WO1995010638A1 (en) * 1993-10-11 1995-04-20 Korea Research Institute Of Chemical Technology Process for the preparation of silicon carbide films using single organosilicon compounds
WO2017148911A1 (de) * 2016-03-01 2017-09-08 Evonik Degussa Gmbh Verfahren zur herstellung eines silicium-kohlenstoff-komposites
DE102015115961B4 (de) * 2014-09-22 2021-02-18 Sumco Corporation Verfahren zur Herstellung eines einkristallinen SiC-Wafers

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015137389A1 (ja) * 2014-03-11 2015-09-17 コニカミノルタ株式会社 ガスバリアーフィルムの製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3011912A (en) * 1959-12-22 1961-12-05 Union Carbide Corp Process for depositing beta silicon carbide
DE3322680A1 (de) * 1982-06-25 1984-01-05 Hitachi, Ltd., Tokyo Verfahren zum aufwachsenlassen eines silizium enthaltenden films durch plasmaablagerung
EP0106637A1 (en) * 1982-10-12 1984-04-25 National Research Development Corporation Infra red transparent optical components
GB2162862A (en) * 1984-07-26 1986-02-12 Japan Res Dev Corp Process for forming monocrystalline thin film of compound semiconductor
EP0193998A1 (en) * 1985-03-07 1986-09-10 Koninklijke Philips Electronics N.V. Method of depositing on a substrate a layer which consists substantially of silicon carbide

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3011912A (en) * 1959-12-22 1961-12-05 Union Carbide Corp Process for depositing beta silicon carbide
DE3322680A1 (de) * 1982-06-25 1984-01-05 Hitachi, Ltd., Tokyo Verfahren zum aufwachsenlassen eines silizium enthaltenden films durch plasmaablagerung
EP0106637A1 (en) * 1982-10-12 1984-04-25 National Research Development Corporation Infra red transparent optical components
GB2162862A (en) * 1984-07-26 1986-02-12 Japan Res Dev Corp Process for forming monocrystalline thin film of compound semiconductor
EP0193998A1 (en) * 1985-03-07 1986-09-10 Koninklijke Philips Electronics N.V. Method of depositing on a substrate a layer which consists substantially of silicon carbide

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0445319A1 (en) * 1990-03-05 1991-09-11 International Business Machines Corporation Process for fabricating silicon carbide films with a predetermined stress
EP0521473A1 (de) * 1991-07-02 1993-01-07 Daimler-Benz Aktiengesellschaft Mehrschichtige, kristallines Siliziumkarbid enthaltende Zusammensetzung
DE4121798A1 (de) * 1991-07-02 1993-01-14 Daimler Benz Ag Mehrschichtige, monokristallines siliziumkarbid enthaltene zusammensetzung
EP0538611A1 (de) * 1991-10-24 1993-04-28 Daimler-Benz Aktiengesellschaft Mehrschichtige Zusammensetzung mit einer Schicht aus monokirstallinem Beta-Siliziumkarbid
GB2267291A (en) * 1992-05-27 1993-12-01 Northern Telecom Ltd Integrated circuits; depositing silicon compounds using excess hydrogen
GB2267291B (en) * 1992-05-27 1995-02-01 Northern Telecom Ltd Plasma deposition process
EP0632145A2 (en) * 1993-07-01 1995-01-04 Dow Corning Corporation Method of forming crystalline silicon carbide coatings
EP0632145A3 (en) * 1993-07-01 1995-03-29 Dow Corning Process for forming coatings based on crystallized silicon carbide.
WO1995010638A1 (en) * 1993-10-11 1995-04-20 Korea Research Institute Of Chemical Technology Process for the preparation of silicon carbide films using single organosilicon compounds
DE102015115961B4 (de) * 2014-09-22 2021-02-18 Sumco Corporation Verfahren zur Herstellung eines einkristallinen SiC-Wafers
WO2017148911A1 (de) * 2016-03-01 2017-09-08 Evonik Degussa Gmbh Verfahren zur herstellung eines silicium-kohlenstoff-komposites
US11078083B2 (en) 2016-03-01 2021-08-03 Evonik Operations Gmbh Process for producing a silicon-carbon composite

Also Published As

Publication number Publication date
KR890700175A (ko) 1989-03-10
EP0295272A1 (en) 1988-12-21
JPH01502182A (ja) 1989-08-03
GB8629496D0 (en) 1987-01-21

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