Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/26—Bombardment with radiation
  • H01L21/263—Bombardment with radiation with high-energy radiation
  • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
  • C30B13/16—Heating of the molten zone
  • C30B13/22—Heating of the molten zone by irradiation or electric discharge
  • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
  • C30B29/02—Elements
  • C30B29/06—Silicon

Definitions

• This invention involves optical heating of material, and particularly to optical annealing of semiconductor material.
• the damage incurred during the doping step is repaired or "annealed" by bringing the material to an elevated temperature.
• the increased mobility and diffusion characteristics at these elevated temperatures allows both the host and the dopant constituents to reorient themselves so that a more perfect crystal structure results with concomittant electrical properties that render the devices electrically operative.
• Annealing is also used in other situations, described hereinafter, not involving damaged material.
• Prior art annealing techniques have involved the simple use of an appropriate oven to raise the damaged material's temperature as required.
• the laser has been effectively applied to this annealing process. Exposure of the damaged semiconductor to laser radiation results in increased mobility and diffusion rates necessary for effective
• a second laser annealing regime involves operating under parameters which result in the melting of that part of the substrate which is exposed to the laser.
• the diffusion rates and mobility in the molten phase are significantly different from that in the solid phase and, as a result, this annealing regime has radically different physical and ' temporal characteristics than the prior art process.
• the molten region refreezes to a crystal, using that part of the underlying undamaged crystalline semiconductor material which is not melted as a template or seed from which to regrow.
• the process is consequently referred to as "liquid phase epitaxial regrowth" annealing.
• This invention is an improved technique for radiant heating of materials, such as semiconductors. 3.
• the technique involves exposing the material to a first pulse, usually of relatively low intensity radiation, which is strongly absorbed by the material. This initial exposure results, in the melting of at least a thin surface layer of the material. This molten layer is then exposed to radiation which would not normally be strongly absorbed by the material when in the solid phase, but which is strongly absorbed by the material when in this molten phase.
• the practitioner may make effective use of those radiant energy sources which emit radiation that would be relatively ineffective in heating the material when in the solid phase. At the same time, only minimal energy is required from those radiant energy sources which are highly absorptive by the solid material.
• a single wavelength laser is used in conjunction with a frequency altering device, such as a frequency doubler, to yield two different wavelength portions.
• Figure 1 is a schematic representation of an apparatus useful in the practice of this invention.
• Figures 2-4 schematically represent reflectivity data which demonstrate the particular efficacy of the dual wavelength laser annealing process.
• Figures 5-6 are plots of the melting properties of various semiconductors as a function of energy of the impinging light for various wavelengths.
• Figures 7 and 8 are schematic representations of specific embodiments of the invention. Detailed Description
• the invention is an improved technique for radiantly heating materials, e.g., for the purpose of annealing semiconductor materials.
• the invention stems partly from the realization that the radiation absorption characteristics of materials depend significantly upon
• the material is in the molten or solid phase.
• readily available and high-powered infrared sources are not generally effectively absorbed by the exemplary semiconductor materials in the solid phase.
• low-powered visible wavelength sources are effectively absorbed by the solid phase semiconductor.
• the invention involves utilizing a pulse of radiant energy which is strongly absorbed by the materials to render at least the surface of the material molten.
• Another pulse of radiant energy in a region of the spectrum which is not strongly absorbed by the material in the solid phase, but which is strongly absorbed by the molten phase, is then used to yield effective annealing.
• the required thickness of the molten region which is created by exposure to the first pulse is dictated by the absorptive phenomenon which takes place during exposure to the second pulse.
• the physical characteristics of the molten phase absorption are such that the molten region created by the first pulse will usually have a thickness approximately equal to the optical skin depth of the material at the wavelength of the second pulse.
• this molten regime will display properties commonly referred to as "metallic".
• this invention is concerned primarily with the optical absorptive properties of the molten regime and is less concerned with some of the other properties associated with metallic materials.
• FIG 1 is a schematic representation of an apparatus which may be used in the practice of this invention.
• a beam of light 11 is emitted by a source 10, onto a substrate 12.
• the light source 10 produces the two wavelengths of light necessary for the practice of this invention and directs them with appropriate timing characteristics to the substrate 12.
• the source 10 may simply be two standard light sources of sufficient power and possibly with appropriate filters, or two lasers of appropriate
• the source is a single laser with an appropriate frequency doubling crystal.
• the various parameters involved in laser annealing may be effectively monitored by utilizing a known reflectivity technique.
• the molten phase is monitored by observing the light reflectivity of the substrate surface in response to the application of a pulse of laser energy thereto.
• the technique depends on the increased reflectivity of the semiconductor when in the molten phase as compared to its reflectivity when in the solid state.
• the data in figures 2-4 was obtained using that technique.
• the figure represents the results of an experiment involving laser annealing of a silicon substrate implanted with arsenic atoms, the implanted region of the substrate thus having been damaged by the implantation process.
• Figure 2 displays the reflectivity of a substrate exposed to a 3.5 joules per cm 2 pulse of 1060 nanometer radiation.
• the vertical axis indicates the reflectivity of the semiconductor surface exposed to the laser light.
• the horizontal axis represents time. It is apparent from figure 2 that, for silicon, the 1060 nm light is not strongly absorbed. The lack of reflected light from the substrate, as indicated by the essentially horizontal data plot, shows that no melting of the semiconductor took place.
• an identically prepared substrate was exposed to a pulse of 530 nm light at an energy density of 300 j per cm 2 . In this figure, it is apparent that the substrate surface has been melted, as shown by the enhanced reflectivity of the substrate surface.
• FIG 4 illustrates the results when an identical substrate is exposed to a pulse of 1060 nm light and 530 nm light with energies as in Figures 2 and 3.
• the semiconductor is not only rendered molten, but remains molten for a much longer period than that obtained in figure 3. This synergistic effect results since the material rendered molten by the 530 nm light becomes highly absorptive to the high-powered 1060 nm light to which it was previously essentially transparent.
• the full power of the 1060 nm light is then absorbed by the molten region extending the depth of this region further so that part of the single crystal undamaged material underlying the damaged layer is also rendered molten.
• the single crystal underlying region acts as a seed or template from which the molten regime may regrow in single crystal form.
• the absorptive characteristics of the semiconductor at various wavelengths is a critical aspect of this invention.
• the invention may be effectively practiced as long as the solid semiconductor is sufficiently absorptive at the wavelength of the first light pulse so that a melt results. This pulse will consequently be referred to as the "melt initiating pulse".
• the solid semiconductor is absorbing.
• visible light is absorbed strongly by most semiconductors as a result of prevalent electronic transitions.
• strongly coupled absorption by the solid semiconductor may also occur in the far infrared region of the spectrum as a result, for example, of vibrational excitation.
• the wavelength of the "melt initiating pulse" may be in the far infrared region of the spectrum.
• the second pulse can couple with this molten region which is highly absorbent to its light. Light from this second pulse, since it is now readily absorbed, will generally extend the melt to greater depths. This pulse is consequently referred to as the "drive in" pulse.
• the physical characteristics of both the melt initiating and drive in pulses are determined, in this embodiment of the invention, by the requirement that exposed portions of the semiconductor be rendered molten to a depth sufficient to include some of the underlying single crystal material. This requirement governs the temporal and energy characteristics of the pulses, as well as their wavelength. These characteristics are displayed in part in figures 5 and 6 where the energy of a 40 nanosecond pulse is plotted on the horizontal axis, and the duration of the resultant molten phase is plotted on the vertical axis. Fig. 6 uses an expanded scale, in comparison with Fig. 5, for more accurately illustrating the relationships at low pulse energies. Curve 31 is for a gallium arsenide substrate and laser light of 530 nm.
• Curve 32 is for a germanium substrate and a wavelength of 530 nm.
• Curve 33 is for a silicon substrate exposed to 530 nm light.
• Curve 34 is for a silicon substrate implanted with 30 kv arsenic atoms to a density of 10 5 atoms per square centimeter and exposed to 530 nm light.
• Curve 35 (Fig. 5) represents a silicon substrate exposed to 1060 nm light.
• Curve 36 represents silicon implanted with 30kV arsenic atoms to 10 atoms per square centimeter and exposed to 1060 nm light. It is clear from Fig. 5 that the shorter wavelength light is much,more readily absorbed by the crystal than the longer wavelength light.
• the temporal extent of the laser pulses is 5 determined by the requirement that the substrater be rendered molten. As such, both the absorptivity of the material and its thermal diffusion must be considered in determining the optimum length of the pulse. The absorption of light by the material must be sufficiently 0 rapid so that the heat will not be lost as a result of the thermal diffusion. Hence, the absorptivity must be high enough relative to the thermal diffusivity so that melting will occur. In the experiments performed by applicants, 5-100 ns pulses were found to be most efficient. However, 5 the pulse width will be materially dependent on the nature of the material, its physical characteristics and the wavelength of the light. In many applications, the pulse width will be less than 150 ns and in most applications, the pulse width will be less than 1 microsecond. These ° considerations are equally important for both the melt initiating pulse and the drive in pulse.
• the time delay between the first and second pulses may be critical. For example, if the second drive in pulse arrives after the first 5 melt-initiating pulse has been extinguished, the molten region may have refrozen and the drive in pulse may be totally ineffective. Likewise, if the drive in pulse arrives prior to the melt-initiating pulse, that portion
• the first melt-initiating pulse renders the surface molten and the drive in pulse strongly couples with this molten region.
• the "second" pulse may arrive before the "first" pulse.
• the depth to which effective annealing can proceed is in part determined by thermal diffusion considerations in the melt.
• the pulses required for the practice of this invention may originate, for example, from two separate laser sources.
• a most effective way of practicing this invention is through the utilization of a single laser which emits light at the wavelength of one of the pulses, and then transformation of a part of this pulse, in a non-linear device, into light at the wavelength required for the other pulse.
• an Nd-glass laser emitting light at 1060 nm may be partly frequency-doubled to yield light at 530 nm.
• the 530 nm pulse comprises the first melt initiating pulse
• the 1060 pulse comprises the second drive in pulse
• the laser • source may emit light which comprises the first pulse
• the non-linear processing may yield light which comprises the second pulse.
• the light pulses may be polarized or unpolarized and may be co-linear or may impinge on the substrate from different angles of incidence.
• Substrates which can be processed according to the teachings of this invention can be of doped semi ⁇ conductor materials.
• the doping process may involve any one of the prevalent semiconductor doping processes.
• a portion of the semiconductor material which is damaged is then exposed to the annealing process so as to anneal the damage and render the semiconductor electrically active.
• Underlying the damaged region is a substantially perfect single crystal material to which the molten region must extend in order for effective annealing to occur.
• the single crystal material will be identical to the original starting semiconductor material before it was damaged.
• the starting material may be a single crystal silicon wafer which is damaged to some depth during ion implantation.
• the underlying base silicon remains single crystal and it is this material which provides the seed for regrowth during the annealing process.
• the underlying single crystal material may not be exactly identical to the damaged material, but may be sufficiently analogous to its desired structure so that it may effectively act as a seed for regrowth.
• a sapphire substrate will act as an effective seed so that overlaying silicon may be laser annealed according to the teachings of this invention.
• annealing is performed for other purposes.
• silicon may be deposited on a thin single crystal substrate using, for example, an evaporative 11. • process.
• the deposited silicon is then amorphous, but may be rendered crystalline by the annealing process described above.
• the instant invention is useful to perform such processing, and may further be used to anneal other materials, such as a surface layer of dopant, which are either amorphous or lack perfect crystal structure.
• Exemplary semiconductor materials include silicon, germanium and gallium arsenide. While the effects of the annealing process on impurity distribution have not been discussed, they may be significant, and may be advantageously utilized.
• the impurity may be implanted near the surface and upon melting, may diffuse throughout a significant portion of the depth of the molten region.
• the drive in pulse which is used to increase the depth of the molten region may also be used to increase the depth to which the implanted impurities diffuse.
• figure 7 shows a piece of semiconductor material 41 portions of which the practitioner desires to anneal.
• the entire substrate is exposed to drive in light 42. Because of the nature of this light, and the fact that it is not absorbed by the solid phase, the light has little affect on the substrate.
• portions 44 of the substrate are additionally exposed to melt-initiating light 43. Those regions of the substrate which are exposed to the melt-initiating light are rendered molten, and are thereby made capable of absorbing the drive in light, 42. Upon absorption of this light, the regions 44 are effectively annealed.
• This particular configuration allows one to use the melt-initiating pulses to define specific regions which are annealed, while the entire substrate is exposed to the drive in light.
• a substrate, 50, with a damaged region, 51 is exposed to drive in light, 53, from its far side.
• the practitioner is taking advantage of the fact that this substrate in its solid phase is transparent to the drive in light.
• the damaged region, 51 is exposed on its near side to melt-initiating light, 52.
• Those regions of the substrate which are exposed to the melt-initiating light, and identified as 54, will then be rendered absorptive to the molten phase light and will be annealed.
• this embodiment is particularly advantageous since the thermal energy is deposited by the drive in pulse at the melt solid interface and need not be diffused from the surface to this interface by means of a thermal gradient. Consequently, physical damage which is observed in the previous embodiments when the molten region becomes too thick is not observed in this embodiment.
• An arsenic doped silicon wafer was annealed using the above-described process.
• the silicon wafer was three inches in diameter and was ion implanted with 30 kV arsenic atoms to a depth of 300 Angstroms and a density of 10 15 arsenic atoms per square centimeter.
• the 500 Angstrom damaged layer was annealed by exposing the surface to a frequency-doubled Nd-glass laser.
• the laser apparatus included a Q-switched Nd-glass laser, a Nd-glass single pass amplifier, and a KDP crystal frequency doubler.
• the system emitted 3.5 joules per cm 2 1060 nm light and .3 joules per cm 2 frequency doubled 530 nm light.
• the infrared light beam was 8 millimeters in diameter and the associated pulse had a 40 ns full width at half maximum, while the visible light had a 6 millimeter diameter with a 30 ns full width at half maximum.
• the pulses were co-linear and were impinged on the wafer at a 10 degree angle to prevent reflection of the light into the laser. Reflection studies from the silicon surface indicate that the molten phase existed for approximately 260 ns and extended into the substrate approximately 2500 angstroms. The damaged region which was exposed to light was effectively annealed as determined by subsequent Rutherford back scattering and channeling studies.

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• 1979
  • 1979-11-15 JP JP50010779A patent/JPS55500964A/ja active Pending
  • 1979-11-15 NL NL7920170A patent/NL7920170A/nl not_active Application Discontinuation
  • 1979-11-15 GB GB8024258A patent/GB2056769B/en not_active Expired
  • 1979-11-15 WO PCT/US1979/000978 patent/WO1980001121A1/en unknown
  • 1979-11-21 CA CA340,333A patent/CA1129969A/en not_active Expired
  • 1979-11-27 FR FR7929145A patent/FR2443138A1/fr active Granted
  • 1979-11-27 IT IT27611/79A patent/IT1127616B/it active

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