NL7920170A - Het optisch verhitten van materialen met twee golfleng- ten. - Google Patents
Het optisch verhitten van materialen met twee golfleng- ten. Download PDFInfo
- Publication number
- NL7920170A NL7920170A NL7920170A NL7920170A NL7920170A NL 7920170 A NL7920170 A NL 7920170A NL 7920170 A NL7920170 A NL 7920170A NL 7920170 A NL7920170 A NL 7920170A NL 7920170 A NL7920170 A NL 7920170A
- Authority
- NL
- Netherlands
- Prior art keywords
- light
- radiation
- pulse
- wavelength
- substrate
- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 title claims description 28
- 230000003287 optical effect Effects 0.000 title description 6
- 238000000034 method Methods 0.000 claims description 25
- 230000005855 radiation Effects 0.000 claims description 24
- 230000008018 melting Effects 0.000 claims description 15
- 238000002844 melting Methods 0.000 claims description 15
- 239000007787 solid Substances 0.000 claims description 7
- 230000005670 electromagnetic radiation Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 description 49
- 239000000758 substrate Substances 0.000 description 37
- 239000004065 semiconductor Substances 0.000 description 34
- 239000013078 crystal Substances 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 239000007790 solid phase Substances 0.000 description 13
- 239000012071 phase Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 239000000155 melt Substances 0.000 description 8
- 238000001228 spectrum Methods 0.000 description 8
- 238000004093 laser heating Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Organic Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Toxicology (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Recrystallisation Techniques (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US96419378A | 1978-11-28 | 1978-11-28 | |
| US96419378 | 1978-11-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7920170A true NL7920170A (nl) | 1980-09-30 |
Family
ID=25508237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7920170A NL7920170A (nl) | 1978-11-28 | 1979-11-15 | Het optisch verhitten van materialen met twee golfleng- ten. |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS55500964A (enrdf_load_stackoverflow) |
| CA (1) | CA1129969A (enrdf_load_stackoverflow) |
| FR (1) | FR2443138A1 (enrdf_load_stackoverflow) |
| GB (1) | GB2056769B (enrdf_load_stackoverflow) |
| IT (1) | IT1127616B (enrdf_load_stackoverflow) |
| NL (1) | NL7920170A (enrdf_load_stackoverflow) |
| WO (1) | WO1980001121A1 (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4542037A (en) * | 1980-04-28 | 1985-09-17 | Fairchild Camera And Instrument Corporation | Laser induced flow of glass bonded materials |
| CA1174285A (en) * | 1980-04-28 | 1984-09-11 | Michelangelo Delfino | Laser induced flow of integrated circuit structure materials |
| US6168744B1 (en) * | 1996-10-08 | 2001-01-02 | Board Of Trustees University Of Arkansas | Process for sequential multi beam laser processing of materials |
| US8546805B2 (en) | 2012-01-27 | 2013-10-01 | Ultratech, Inc. | Two-beam laser annealing with improved temperature performance |
| SG195515A1 (en) | 2012-06-11 | 2013-12-30 | Ultratech Inc | Laser annealing systems and methods with ultra-short dwell times |
| US9558973B2 (en) | 2012-06-11 | 2017-01-31 | Ultratech, Inc. | Laser annealing systems and methods with ultra-short dwell times |
| US10083843B2 (en) | 2014-12-17 | 2018-09-25 | Ultratech, Inc. | Laser annealing systems and methods with ultra-short dwell times |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3340601A (en) * | 1963-07-17 | 1967-09-12 | United Aircraft Corp | Alloy diffused transistor |
| US3492072A (en) * | 1965-04-14 | 1970-01-27 | Westinghouse Electric Corp | Apparatus for producing radiation patterns for forming etchant-resistant patterns and the like |
| US3585088A (en) * | 1968-10-18 | 1971-06-15 | Ibm | Methods of producing single crystals on supporting substrates |
| US3848104A (en) * | 1973-04-09 | 1974-11-12 | Avco Everett Res Lab Inc | Apparatus for heat treating a surface |
| US4151008A (en) * | 1974-11-15 | 1979-04-24 | Spire Corporation | Method involving pulsed light processing of semiconductor devices |
| US3940289A (en) * | 1975-02-03 | 1976-02-24 | The United States Of America As Represented By The Secretary Of The Navy | Flash melting method for producing new impurity distributions in solids |
| US4059461A (en) * | 1975-12-10 | 1977-11-22 | Massachusetts Institute Of Technology | Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof |
| US3989778A (en) * | 1975-12-17 | 1976-11-02 | W. R. Grace & Co. | Method of heat sealing thermoplastic sheets together using a split laser beam |
| DE2643893C3 (de) * | 1976-09-29 | 1981-01-08 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung einer mit einer Struktur versehenen Schicht auf einem Substrat |
| US4087695A (en) * | 1977-01-17 | 1978-05-02 | The United States Of America As Represented By The Secretary Of The Army | Method for producing optical baffling material using pulsed electron beams |
| DE2705444A1 (de) * | 1977-02-09 | 1978-08-10 | Siemens Ag | Verfahren zur lokal begrenzten erwaermung eines festkoerpers |
| US4154625A (en) * | 1977-11-16 | 1979-05-15 | Bell Telephone Laboratories, Incorporated | Annealing of uncapped compound semiconductor materials by pulsed energy deposition |
| US4147563A (en) * | 1978-08-09 | 1979-04-03 | The United States Of America As Represented By The United States Department Of Energy | Method for forming p-n junctions and solar-cells by laser-beam processing |
| US4155779A (en) * | 1978-08-21 | 1979-05-22 | Bell Telephone Laboratories, Incorporated | Control techniques for annealing semiconductors |
-
1979
- 1979-11-15 JP JP50010779A patent/JPS55500964A/ja active Pending
- 1979-11-15 NL NL7920170A patent/NL7920170A/nl not_active Application Discontinuation
- 1979-11-15 GB GB8024258A patent/GB2056769B/en not_active Expired
- 1979-11-15 WO PCT/US1979/000978 patent/WO1980001121A1/en unknown
- 1979-11-21 CA CA340,333A patent/CA1129969A/en not_active Expired
- 1979-11-27 FR FR7929145A patent/FR2443138A1/fr active Granted
- 1979-11-27 IT IT27611/79A patent/IT1127616B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| IT1127616B (it) | 1986-05-21 |
| GB2056769A (en) | 1981-03-18 |
| IT7927611A0 (it) | 1979-11-27 |
| JPS55500964A (enrdf_load_stackoverflow) | 1980-11-13 |
| WO1980001121A1 (en) | 1980-05-29 |
| GB2056769B (en) | 1983-03-30 |
| CA1129969A (en) | 1982-08-17 |
| FR2443138B1 (enrdf_load_stackoverflow) | 1983-06-17 |
| FR2443138A1 (fr) | 1980-06-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A85 | Still pending on 85-01-01 | ||
| BV | The patent application has lapsed |