WO1980001121A1 - Recuit de materiau par laser a double longueur d'onde - Google Patents

Recuit de materiau par laser a double longueur d'onde Download PDF

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Publication number
WO1980001121A1
WO1980001121A1 PCT/US1979/000978 US7900978W WO8001121A1 WO 1980001121 A1 WO1980001121 A1 WO 1980001121A1 US 7900978 W US7900978 W US 7900978W WO 8001121 A1 WO8001121 A1 WO 8001121A1
Authority
WO
WIPO (PCT)
Prior art keywords
pulse
molten
light
wavelength
radiation
Prior art date
Application number
PCT/US1979/000978
Other languages
English (en)
Inventor
J Golovchenko
D Auston
T Venkatesan
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Priority to DE19792953138 priority Critical patent/DE2953138A1/de
Publication of WO1980001121A1 publication Critical patent/WO1980001121A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Abstract

Dans un nouveau mode de chauffage radiant deux impulsions de longueurs d'onde differentes (fig. 7, 42, 43) sont utilisees pour fondre des parties d'un corps solide (41). La premiere impulsion peut avoir une intensite relativement faible mais elle est fortement absorbee par le solide. La seconde impulsion qui n'est pas fortement absorbee par le corps dans sa phase solide, est fortement absorbee par le corps lorsqu'il est en phase de fusion. L'exposition a la premiere impulsion donne comme resultat la fusion initiale du corps qui devient alors tres absorbant a la radiation de la longueur d'onde de la seconde impulsion. Des sources d'energie radiantes existantes, p.ex., des lasers, qui produisent des radiations qui ne sont pas hautement absorbees en general par le corps dans la phase solide peuvent etre utilisees de maniere efficace.
PCT/US1979/000978 1978-11-28 1979-11-15 Recuit de materiau par laser a double longueur d'onde WO1980001121A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19792953138 DE2953138A1 (de) 1978-11-28 1979-11-15 Dual wavelength laser annealing of materials

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US96419378A 1978-11-28 1978-11-28
US964193 2001-09-24

Publications (1)

Publication Number Publication Date
WO1980001121A1 true WO1980001121A1 (fr) 1980-05-29

Family

ID=25508237

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1979/000978 WO1980001121A1 (fr) 1978-11-28 1979-11-15 Recuit de materiau par laser a double longueur d'onde

Country Status (7)

Country Link
JP (1) JPS55500964A (fr)
CA (1) CA1129969A (fr)
FR (1) FR2443138A1 (fr)
GB (1) GB2056769B (fr)
IT (1) IT1127616B (fr)
NL (1) NL7920170A (fr)
WO (1) WO1980001121A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4443493A (en) * 1980-04-28 1984-04-17 Fairchild Camera And Instrument Corp. Laser induced flow glass materials
US4542037A (en) * 1980-04-28 1985-09-17 Fairchild Camera And Instrument Corporation Laser induced flow of glass bonded materials
WO1998015380A1 (fr) * 1996-10-08 1998-04-16 The University Of Arkansas Procede et appareil de traitement sequentiel de materiaux au laser a faisceaux multiples

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8546805B2 (en) 2012-01-27 2013-10-01 Ultratech, Inc. Two-beam laser annealing with improved temperature performance
US9558973B2 (en) 2012-06-11 2017-01-31 Ultratech, Inc. Laser annealing systems and methods with ultra-short dwell times
SG195515A1 (en) 2012-06-11 2013-12-30 Ultratech Inc Laser annealing systems and methods with ultra-short dwell times
US10083843B2 (en) 2014-12-17 2018-09-25 Ultratech, Inc. Laser annealing systems and methods with ultra-short dwell times

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US3585088A (en) * 1968-10-18 1971-06-15 Ibm Methods of producing single crystals on supporting substrates
US3848104A (en) * 1973-04-09 1974-11-12 Avco Everett Res Lab Inc Apparatus for heat treating a surface
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US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof
US4087695A (en) * 1977-01-17 1978-05-02 The United States Of America As Represented By The Secretary Of The Army Method for producing optical baffling material using pulsed electron beams
US4133702A (en) * 1976-09-22 1979-01-09 Siemens Aktiengesellschaft Method of producing structured layers on a substrate being irradiated with two coherent particle beams
US4147563A (en) * 1978-08-09 1979-04-03 The United States Of America As Represented By The United States Department Of Energy Method for forming p-n junctions and solar-cells by laser-beam processing
US4151008A (en) * 1974-11-15 1979-04-24 Spire Corporation Method involving pulsed light processing of semiconductor devices
US4154625A (en) * 1977-11-16 1979-05-15 Bell Telephone Laboratories, Incorporated Annealing of uncapped compound semiconductor materials by pulsed energy deposition
US4155779A (en) * 1978-08-21 1979-05-22 Bell Telephone Laboratories, Incorporated Control techniques for annealing semiconductors

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US3340601A (en) * 1963-07-17 1967-09-12 United Aircraft Corp Alloy diffused transistor
US3492072A (en) * 1965-04-14 1970-01-27 Westinghouse Electric Corp Apparatus for producing radiation patterns for forming etchant-resistant patterns and the like
US3989778A (en) * 1975-12-17 1976-11-02 W. R. Grace & Co. Method of heat sealing thermoplastic sheets together using a split laser beam
DE2705444A1 (de) * 1977-02-09 1978-08-10 Siemens Ag Verfahren zur lokal begrenzten erwaermung eines festkoerpers

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3585088A (en) * 1968-10-18 1971-06-15 Ibm Methods of producing single crystals on supporting substrates
US3848104A (en) * 1973-04-09 1974-11-12 Avco Everett Res Lab Inc Apparatus for heat treating a surface
US4151008A (en) * 1974-11-15 1979-04-24 Spire Corporation Method involving pulsed light processing of semiconductor devices
US3940289A (en) * 1975-02-03 1976-02-24 The United States Of America As Represented By The Secretary Of The Navy Flash melting method for producing new impurity distributions in solids
US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof
US4133702A (en) * 1976-09-22 1979-01-09 Siemens Aktiengesellschaft Method of producing structured layers on a substrate being irradiated with two coherent particle beams
US4087695A (en) * 1977-01-17 1978-05-02 The United States Of America As Represented By The Secretary Of The Army Method for producing optical baffling material using pulsed electron beams
US4154625A (en) * 1977-11-16 1979-05-15 Bell Telephone Laboratories, Incorporated Annealing of uncapped compound semiconductor materials by pulsed energy deposition
US4147563A (en) * 1978-08-09 1979-04-03 The United States Of America As Represented By The United States Department Of Energy Method for forming p-n junctions and solar-cells by laser-beam processing
US4155779A (en) * 1978-08-21 1979-05-22 Bell Telephone Laboratories, Incorporated Control techniques for annealing semiconductors

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* Cited by examiner, † Cited by third party
Title
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Applied Physics Letters, Vol. 29, No. 10, Issued November 1976, D. Chen et al."Multimode Optical Channel Waveguides Induced In Glass by Laser Heating", p. 657-659 *
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Applied Physics, Vol. 15, Issued April 1978, (Spinger Verlag), G. Foti et al, "Structure of Crystallized Layers by Laser Annealing of (100) and (111) Self Implanted Si-Samples, P. 365-369 *
Electronics Letters, Vol. 14, No. 4, Issued February 1978, S.S. Kular et al, "Pulsed Laser Annealing of Zn Implanted GaAs, P. 85-87 *
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Jour. Applied Physics, Vol. 50, No. (1), Issued January 1979, M. Bartolohi et al, "Structure Transitions in Amorphous Si under Laser Irradiation", P. 259-65 *
Jour. Applied Physics, Vol. 50, No. 2, Issued February 1979, P. Baeri et al, "A Melting Model for Pulsing-Laser Annealing of Implanted Semiconductor, P. 788-797 *
Phys. Stat. Solidi, Vol. 49 (a), Issued September 1978, G. Gattaglin et al, Two-Stage, Laser Annealing of Lattice Disorder in P Implanted Si, p. 347-352 *
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4443493A (en) * 1980-04-28 1984-04-17 Fairchild Camera And Instrument Corp. Laser induced flow glass materials
US4542037A (en) * 1980-04-28 1985-09-17 Fairchild Camera And Instrument Corporation Laser induced flow of glass bonded materials
WO1998015380A1 (fr) * 1996-10-08 1998-04-16 The University Of Arkansas Procede et appareil de traitement sequentiel de materiaux au laser a faisceaux multiples

Also Published As

Publication number Publication date
IT7927611A0 (it) 1979-11-27
GB2056769B (en) 1983-03-30
JPS55500964A (fr) 1980-11-13
NL7920170A (nl) 1980-09-30
IT1127616B (it) 1986-05-21
FR2443138B1 (fr) 1983-06-17
FR2443138A1 (fr) 1980-06-27
GB2056769A (en) 1981-03-18
CA1129969A (fr) 1982-08-17

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