USRE36224E - Microwave plasma processing process and apparatus - Google Patents

Microwave plasma processing process and apparatus Download PDF

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Publication number
USRE36224E
USRE36224E US08/749,654 US74965496A USRE36224E US RE36224 E USRE36224 E US RE36224E US 74965496 A US74965496 A US 74965496A US RE36224 E USRE36224 E US RE36224E
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United States
Prior art keywords
microwave
microwaves
dielectric window
plasma processing
iaddend
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US08/749,654
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English (en)
Inventor
Shuzo Fujimura
Toshimasa Kisa
Yasunari Motoki
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Fujitsu Ltd
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Fujitsu Ltd
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Priority claimed from US08/054,609 external-priority patent/US5364519A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • the present invention relates to a plasma processing process and apparatus useful in the fabrication of integrated circuits (. .ICS.!. .Iadd.ICs.Iaddend.) or similar semiconductor devices, More particularly, the present invention relates to a microwave plasma processing method and process and an apparatus used for an etching or ashing process in the fabrication of . .ICS.!. .Iadd.ICs .Iaddend.or similar devices.
  • the present invention enables processing of a material at a higher speed by significantly reducing the reflection of microwaves.
  • an etching or ashing process based on a dry process is widely used.
  • a typical dry etching process is the plasma etching process.
  • the plasma etching process as compared with the wet etching process, which was frequently used at the beginning of the IC industry, has various advantages such as fine resolution and less undercutting, reduction of the number of fabricating processes by elimination of wafer handling for rinsing and drying, etc., and inherent cleanliness: Plasma etching, in particular, makes it possible to perform sequential etching and stripping operations on the same machine, making it possible to have a fully automated fabricating process for . .ICS.!. .Iadd.ICs .Iaddend.or similar devices.
  • a "plasma” is a highly ionized gas with a nearly equal number of positive and negative charged particles plus free radicals.
  • the free radicals are electrically neutral atoms or molecules that can actively form chemical bonds.
  • the free radicals generated in a plasma, acting as a reactive species, chemically combine with materials to be etched to form volatile compounds which are removed from the system by an evacuating device.
  • Recent conventionally used plasma etching apparatuses comprise a plasma generating region (plasma generating vessel or generator) and a reacting region (reactor or etching chamber) spaced apart from each other and connected through a tube or waveguide to guide the microwaves from the plasma generating vessel to the reactor.
  • the reactor has a microwave transmission window of silica or ceramic disposed perpendicular to the flow direction of the microwaves in the waveguide.
  • the microwave plasma etching apparatus of the above-described structure is hereinafter referred to as a "perpendicular incidence-type plasma etching apparatus".
  • Examples of the perpendicular incidence-type microwave plasma etching apparatus can be found in patent literature, such as Japanese Examined Patent Publication (Kokoku) Nos. 53-14472, 53-24779, and 53-34461; Japanese Unexamined Patent Publication (Kokai) No. 53-110378, and U.S. Pat. No. 4,192,706, which is a counterpart of Japanese Examined Patent Publication (Kokoku) No. 53-14472.
  • the processing rate is low as a result of the reflection of the microwaves at the two interfaces of the microwave transmission window. Further, matching of the microwaves is difficult because the microwaves are not effectively transmitted into the reactor. Furthermore, it is not easy to cool the stage for the object under processing or to reduce the size of the apparatus.
  • a microwave plasma processing process in which the material to be processed is processed with plasma generated using microwaves transmitted through a microwave transmission window disposed perpendicular to an electric field of the progressive microwaves in the waveguide.
  • a microwave plasma processing apparatus which includes: a microwave generator; a waveguide for the progressive microwaves connected with the microwave generator; a microwave transmission window defining a part of the waveguide disposed perpendicular to an electric field of the progressive microwaves in the waveguide; and a vacuum reactor for processing a material, the reactor being partially defined by said microwave transmission window.
  • microwaves are effectively transmitted through the microwave transmission window. Therefore, they are effectively introduced into the vacuum reactor in which plasma processing is carried out. No disturbance of the microwave mode is caused, while, as described above, the microwave transmission window is disposed perpendicular to an electric field of the microwaves, i.e., parallel to the direction of the travel of the microwaves in the waveguide.
  • the present invention it becomes possible to process the object at a higher processing rate. Further, matching of the microwaves becomes easy. Furthermore, it becomes possible to easily cool the stage for the object and to reduce the size of the apparatus.
  • FIG. 1 is a schematic view of a prior art microwave plasma etching apparatus
  • FIG. 2 is a schematic view of another prior art microwave plasma processing apparatus
  • FIG. 3 is a partial schematic view of a typical prior art perpendicular incidence-type plasma etching apparatus
  • FIG. 4 is an enlarged schematic view of the microwave transmission window and object of the device shown in FIG. 3;
  • FIG. 5 is a schematic view of a microwave plasma processing apparatus according to the present invention.
  • FIG. 6 is a schematic view of another microwave plasma processing apparatus according to the present invention.
  • FIG. 7 is a perspective view of the plasma processing apparatus shown in FIG. 6;
  • FIG. 8 is a schematic view of still another microwave plasma processing apparatus according to the present invention.
  • FIG. 9 is a perspective view of the plasma processing apparatus shown in FIG. 8.
  • FIG. 10 is a schematic view of still another microwave plasma processing apparatus according to the present invention.
  • FIG. 11 is a perspective view of the plasma processing apparatus shown in FIG. 10.
  • FIG. 12 is a schematic view of still another microwave processing apparatus according to the present invention.
  • a conventional microwave energy supplying device includes a magnetron power source 12, a waveguide 16, a tunnel 17, a plunger 18, an applicator 19, a microwave shield housing 20, and a plasma generating vessel 21. Descriptions of these elements are omitted because the elements are easily understood by those skilled in the art.
  • a reactor 1 is separated from the plasma generating vessel 21 by a specified distance.
  • This spatial separation makes it easy to obtain matching between the load impedance (plasma 22) and the output impedance of the microwave source 12 (a magnetron) at a frequency of 2.45 GHz so that the microwave energy is absorbed effectively by gas plasma 22, and the generating efficiency of an active species (radicals) is increased significantly.
  • the radicals thus generated are introduced into a reactor 1, where a wafer 9 or other device to be processed is positioned.
  • the microwave energy having a frequency of 2.45 GHz supplied from a magnetron (not shown) having a 400 W output power, is transmitted through a waveguide 2.
  • a plasma generating vessel 21 is substantially a part of the waveguide 2 and partitioned from the other part of the waveguide 2 by a ceramic or silica glass, vacuum tight window 29.
  • a dummy load 25 is attached to the end of the total waveguide, namely, the waveguide 2 including the plasma generating vessel 21, in order to reduce reflected microwave power.
  • the dummy load is water-cooled by a water-cooling pipe 38.
  • a processing vessel (reactor) 3 is coupled to the plasma generating vessel 21 through several holes 4 formed in a wall of the waveguide 2.
  • an object or material to be processed 26 such as a semiconductor wafer, is mounted on a platform or stage 27.
  • the holes 4 act as a shielding means for the microwave energy to prevent the plasma generated in the vessel 21 from intruding into the processing vessel 3 thereby protecting the object 21 positioned inside the processing vessel 3.
  • the holes 4 act as a transmitting means for the radicals.
  • the plasma generating vessel 21, the processing vessel 3, and a pumping device comprise a vacuum system, and the system is evacuated through exhaust tubes 6. A reactive gas is . .introducted.!.
  • the distance between the plasma generating vessel 21 and the object 26 is approximately 0.8 cm. This length of 0.8 cm is equal to the distance where the plasma may intrude if the shielding means of plasma, or transmitting means for the radicals is taken away.
  • the dimension of the plasma generating vessel 21, in the direction of the microwave electric field, is slightly reduced from that of the original waveguide 2, by 8 mm for example. The reduction in the dimension intensifies the microwave electric field inside the plasma generating vessel 21 thereby increasing the plasma generating efficiency.
  • FIG. 3 is a simplified illustration of the perpendicular incidence-type apparatus
  • FIG. 4 is an enlarged illustration of the microwave transmission window of FIG. 3.
  • the microwaves are guided through a waveguide 13, which is connected with a microwave power source (not shown).
  • a reactor or etching chamber 14 is provided with a reactive gas inlet 11 and an evacuation outlet 15, connected to a conventional evacuation system (not shown) to form a vacuum in the chamber, and is connected with the waveguide 13 through a microwave transmission window 10 of silica or ceramic disposed perpendicular to the flow direction of the microwaves.
  • An object 8 or material to be processed, such as a semiconductor wafer, is mounted on a stage (not shown; reference number 7 in FIG. 4) and is disposed in the reactor or vacuum chamber 14.
  • the microwaves perpendicularly incident on the microwave transmission window 10 are partially reflected at two portions.
  • Second, the microwaves penetrating into the window are partially reflected at an interface between the window and the vacuum or plasma of the reactor.
  • the impedance in the reactor varies in accordance with the condition of the reactor, namely, from the vacuum to the plasma, it is substantially impossible to provide a system which results in satisfactory matching in both conditions of the vacuum and plasma.
  • the dielectric constant ( ⁇ 1 ) inside the waveguide 13 is 1, since air occupies the waveguide 13. Further, the dielectric constant ( ⁇ 3 ) inside the reactor 14, before the plasma is produced therein, is 1. This is because the reactor 14 is maintained at a vacuum condition.
  • the dielectric constant ( ⁇ 2 ) of the microwave transmission window 10 depends on the type of the insulating material used. For example, the dielectric constant ( ⁇ 2 ) of a silica window 10 is of the order of 3, and that of a ceramic window 10 is of the order of 9. Accordingly, in the two interfaces of the window 10 discussed above, there is a relationship of the dielectric constants ⁇ 3 ⁇ 2 ⁇ 1 .
  • (.Iadd.l) .Iaddend. has been set so that the the stage can be positioned where the microwave electric field is maximum in strength. It has been observed that when the distance . .(l).!. (.Iadd.l) .Iaddend.is less than ⁇ /4, no effective production of the plasma is attained, while, when the distance . .(l).!. (.Iadd.l) .Iaddend.is greater than ⁇ /4, a remarkable decay of the plasma density at the neighborhood of the stage is caused at a pressure of 1 Torr or more.
  • O 2 reactive gas oxygen
  • FIG. 5 An example of a microwave plasma processing apparatus according to the present invention is illustrated in FIG. 5.
  • a waveguide is indicated with reference number 30, through which the microwave produced in a conventional microwave generator 39 is transmitted in the direction of the arrow.
  • a microwave transmission window 31 of an insulating material such as silica or ceramic defines a part of the waveguide 30 and separates a reactor or vacuum chamber 32 from the microwave transmission region of the waveguide 30.
  • the reactor 32 as is shown in FIG. 5, is provided with a reactive gas inlet 35, an evacuation outlet 36 connected with a conventional evacuation system (not shown), and a stage or susceptor 34 on which an object or material . .to processed.!. .Iadd.to be processed .Iaddend.33, for example, a semiconductor wafer, is laid.
  • the object 33 is disposed parallel to the window 31.
  • the microwave transmission window 31 is disposed perpendicular to the direction (arrow 40) of the electric field of the progressive microwaves in the waveguide.
  • the window 31 is parallel to the direction of the progressive microwaves.
  • the direction of the window 31 is shifted 90° from that of the window 10 in the conventional perpendicular incidence-type plasma etching apparatus shown in FIG. 3, for example.
  • the mode of the microwaves traveling from the waveguide 30 to the reactor 32 is not adversely affected, and the microwaves are effectively absorbed into the reactor 32. Therefore, in the illustrated plasma processing apparatus, it has been found that matching can be easily accomplished.
  • the microwave transmission window 31 was formed from silica and had a thickness of 12 mm.
  • the distance (d) between the window 31 and the stage 34 was 3 mm.
  • the distance (D) between the upper wall of the waveguide 30 and the stage 34 (a total of the height of the waveguide 30 in the direction of the electric field of the microwaves, the thickness of the window 31, and the distance (d) described above; the distance (D) hereinafter is also referred to as "chamber height") was 50 mm.
  • the resulting apparatus was very small in comparison with the prior art perpendicular incidence-type apparatus.
  • Microwaves having a frequency of 2.45 GHz were transmitted through the waveguide 30.
  • the apparatus of the present invention it is easy to dispose a cooling means in the apparatus, since the lower portion of the stage 34 does not have to be maintained in a vacuum condition. In fact, according to the present invention, it is possible to carry out the plasma processing at a temperature of 100° C. or less. It should be noted that, during the plasma processing, the object 33 is generally heated to a higher temperature exceeding 200° C. if the apparatus has no cooling means.
  • the dimensions of the object or material to be processed be smaller than those of the microwave transmission window. This is because, when the microwaves transmitted through the window are incident on the material they must cover all of the material. This enables uniform plasma processing under limited plasma generating conditions.
  • the distance or chamber height (D) discussed above is preferred to be less than ⁇ /2, wherein ⁇ is the wavelength of the microwaves. It has been found that such a chamber height results in reduction of the deflection of the reflected wave in the presence of the plasma, thereby extending the possible matching range. Further, when the chamber height (D) is less than ⁇ /2, a tuning operation can be easily carried out.
  • the microwave transmission window be supported with a holder which is fitted to the waveguide and be replaceable. If the window is replaceable, it is easy to change the size and material of the window depending upon the conditions of the plasma processing.
  • an apparatus of this structure can be commonly used for both plasma processing and after-glow discharge processing, for example. This means that the apparatus of the present invention can be widely used in various different processes.
  • FIG. 6 illustrates an embodiment of the apparatus according to the present invention.
  • the height (L in FIG. 5) of the waveguide 30 in the direction of the electric field of the microwaves is decreased in the direction of travel of the microwaves.
  • the height (L 2 ) is smaller than the height (L 1 ).
  • FIG. 7 is a perspective view of the apparatus shown in FIG. 6.
  • FIG. 9 is a perspective view of the apparatus shown in FIG. 8.
  • the height of the waveguide 30 when the height of the waveguide 30 is gradually decreased in the manner shown, for example, in FIGS. 6 to 9, it effectively compensates for the loss of the strength of the electric field at an end portion of the waveguide 30.
  • a constant distribution of the strength of the electric field in the waveguide 30 is provided, and reduction of the reflection of the microwaves therefore results.
  • the microwave transmission window generally comprises a disc-shaped element of an insulating material such as silica or ceramic.
  • it may . .comprises.!. .Iadd.comprise .Iaddend.two or more rectangular, for example, stripe-shaped, elements which are parallel to each other, the distance between the two adjacent elements being ⁇ g/4, wherein ⁇ g is the wavelength of the microwaves in the waveguide. See FIG. 10.
  • FIG. 11 is a perspective view of the apparatus of FIG. 10, in which 37a and 37b are notches.
  • the separation of the window into two or more elements in the illustrated manner is effective to prevent the breakage of the window without narrowing the plasma area, when a window of a weak material such as alumina is subjected to atmospheric pressure. This is because the openings 37a and 37b act as an additional waveguide.
  • FIG. 12 shows that a stage 34 reciprocatable in the direction of the electric field of the progressive microwaves in the waveguide 30.
  • the reciprocatable stage 34 is effective to control the distance (d) between the window 31 and the stage 34 depending upon various factors, such as conditions of the object 33 or the objects of the processing, thereby preventing damage of the object 33. It has been found that, in oxygen plasma processing for removing resist material from an aluminum substrate, at 0.3 Torr, the aluminum substrate was damaged at a distance (d) of 5 mm, but was not damaged at a distance (d) of 20 mm.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
US08/749,654 1984-11-30 1996-11-15 Microwave plasma processing process and apparatus Expired - Lifetime USRE36224E (en)

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Application Number Priority Date Filing Date Title
US08/749,654 USRE36224E (en) 1984-11-30 1996-11-15 Microwave plasma processing process and apparatus

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP59-252909 1984-11-30
JP59252909A JPS61131454A (ja) 1984-11-30 1984-11-30 マイクロ波プラズマ処理方法と装置
US80233285A 1985-11-27 1985-11-27
US1651387A 1987-02-17 1987-02-17
US15044688A 1988-02-01 1988-02-01
US41600289A 1989-10-02 1989-10-02
US53223490A 1990-06-04 1990-06-04
US60434390A 1990-10-25 1990-10-25
US08/054,609 US5364519A (en) 1984-11-30 1993-04-30 Microwave plasma processing process and apparatus
US08/749,654 USRE36224E (en) 1984-11-30 1996-11-15 Microwave plasma processing process and apparatus

Related Parent Applications (2)

Application Number Title Priority Date Filing Date
US60434390A Continuation 1984-11-30 1990-10-25
US08/054,609 Reissue US5364519A (en) 1984-11-30 1993-04-30 Microwave plasma processing process and apparatus

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USRE36224E true USRE36224E (en) 1999-06-08

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US (1) USRE36224E (ja)
EP (1) EP0183561B1 (ja)
JP (1) JPS61131454A (ja)
KR (1) KR900000441B1 (ja)
DE (1) DE3581605D1 (ja)

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US7372768B2 (en) 2002-03-19 2008-05-13 Micron Technology, Inc. Memory with address management

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JPS62213126A (ja) * 1986-03-13 1987-09-19 Fujitsu Ltd マイクロ波プラズマ処理装置
JPH079359Y2 (ja) * 1986-04-23 1995-03-06 新日本無線株式会社 プラズマ装置
EP0264913B1 (en) * 1986-10-20 1994-06-22 Hitachi, Ltd. Plasma processing apparatus
US4804431A (en) * 1987-11-03 1989-02-14 Aaron Ribner Microwave plasma etching machine and method of etching
FR2631199B1 (fr) * 1988-05-09 1991-03-15 Centre Nat Rech Scient Reacteur a plasma
JP2760845B2 (ja) * 1988-07-08 1998-06-04 株式会社日立製作所 プラズマ処理装置及びその方法
EP0402867B1 (en) * 1989-06-15 1995-03-01 Sel Semiconductor Energy Laboratory Co., Ltd. Apparatus for microwave processing in a magnetic field
JPH03193880A (ja) * 1989-08-03 1991-08-23 Mikakutou Seimitsu Kogaku Kenkyusho:Kk 高圧力下でのマイクロ波プラズマｃｖｄによる高速成膜方法及びその装置
DE9013937U1 (de) * 1990-10-06 1992-02-06 Röhm GmbH, 64293 Darmstadt Mikrowellenstrahler
US5359177A (en) * 1990-11-14 1994-10-25 Mitsubishi Denki Kabushiki Kaisha Microwave plasma apparatus for generating a uniform plasma
DE4037091C2 (de) * 1990-11-22 1996-06-20 Leybold Ag Vorrichtung für die Erzeugung eines homogenen Mikrowellenfeldes
JP3158715B2 (ja) * 1992-03-30 2001-04-23 株式会社ダイヘン プラズマ処理装置
WO1995027998A1 (de) * 1994-04-11 1995-10-19 Wu Jeng Ming Plasmagerät
EP0688038B1 (en) * 1994-06-14 2001-12-19 Sumitomo Metal Industries, Ltd. Microwave plasma processing system
EP0702393A3 (en) * 1994-09-16 1997-03-26 Daihen Corp Plasma processing apparatus for introducing a micrometric wave from a rectangular waveguide, through an elongated sheet into the plasma chamber

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US7372768B2 (en) 2002-03-19 2008-05-13 Micron Technology, Inc. Memory with address management

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JPS61131454A (ja) 1986-06-19
EP0183561A3 (en) 1988-05-25
DE3581605D1 (de) 1991-03-07
EP0183561A2 (en) 1986-06-04
JPH053732B2 (ja) 1993-01-18
EP0183561B1 (en) 1991-01-30
KR900000441B1 (en) 1990-01-30

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