USB483268I5 - - Google Patents

Info

Publication number
USB483268I5
USB483268I5 US48326874A USB483268I5 US B483268 I5 USB483268 I5 US B483268I5 US 48326874 A US48326874 A US 48326874A US B483268 I5 USB483268 I5 US B483268I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to US05/483,268 priority Critical patent/US3995215A/en
Priority to CA75225123A priority patent/CA1048645A/en
Priority to IT22703/75A priority patent/IT1037604B/it
Priority to GB1715375A priority patent/GB1476040A/en
Priority to AU80679/75A priority patent/AU492793B2/en
Priority to FR7516532A priority patent/FR2276661A1/fr
Priority to NL7506539A priority patent/NL7506539A/xx
Priority to SE7506873A priority patent/SE406829B/xx
Priority to JP50072775A priority patent/JPS5114238A/ja
Priority to CH796575A priority patent/CH581886A5/xx
Priority to DE2527486A priority patent/DE2527486C3/de
Publication of USB483268I5 publication Critical patent/USB483268I5/en
Application granted granted Critical
Publication of US3995215A publication Critical patent/US3995215A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/14—Implementation of control logic, e.g. test mode decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
US05/483,268 1974-06-26 1974-06-26 Test technique for semiconductor memory array Expired - Lifetime US3995215A (en)

Priority Applications (11)

Application Number Priority Date Filing Date Title
US05/483,268 US3995215A (en) 1974-06-26 1974-06-26 Test technique for semiconductor memory array
CA75225123A CA1048645A (en) 1974-06-26 1975-04-17 Test technique for semiconductor memory array
IT22703/75A IT1037604B (it) 1974-06-26 1975-04-24 Sistema di prova di matrici di memoria
GB1715375A GB1476040A (en) 1974-06-26 1975-04-25 Testing bistable memory cells
AU80679/75A AU492793B2 (en) 1974-06-26 1975-04-30 Testing bistable memory cells
FR7516532A FR2276661A1 (fr) 1974-06-26 1975-05-21 Procede test de memoires a semi-conducteur
NL7506539A NL7506539A (nl) 1974-06-26 1975-06-03 Werkwijze voor het testen van een halfgeleider- geheugenmatrix.
SE7506873A SE406829B (sv) 1974-06-26 1975-06-16 Metod for att testa cellerna i en halvledarminnesmatries
JP50072775A JPS5114238A (en) 1974-06-26 1975-06-17 Soanteikiokuseruno tesutohoho
CH796575A CH581886A5 (enrdf_load_stackoverflow) 1974-06-26 1975-06-19
DE2527486A DE2527486C3 (de) 1974-06-26 1975-06-20 Verfahren zur Prüfung bistabiler Speicherzellen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/483,268 US3995215A (en) 1974-06-26 1974-06-26 Test technique for semiconductor memory array

Publications (2)

Publication Number Publication Date
USB483268I5 true USB483268I5 (enrdf_load_stackoverflow) 1976-03-09
US3995215A US3995215A (en) 1976-11-30

Family

ID=23919404

Family Applications (1)

Application Number Title Priority Date Filing Date
US05/483,268 Expired - Lifetime US3995215A (en) 1974-06-26 1974-06-26 Test technique for semiconductor memory array

Country Status (10)

Country Link
US (1) US3995215A (enrdf_load_stackoverflow)
JP (1) JPS5114238A (enrdf_load_stackoverflow)
CA (1) CA1048645A (enrdf_load_stackoverflow)
CH (1) CH581886A5 (enrdf_load_stackoverflow)
DE (1) DE2527486C3 (enrdf_load_stackoverflow)
FR (1) FR2276661A1 (enrdf_load_stackoverflow)
GB (1) GB1476040A (enrdf_load_stackoverflow)
IT (1) IT1037604B (enrdf_load_stackoverflow)
NL (1) NL7506539A (enrdf_load_stackoverflow)
SE (1) SE406829B (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4055754A (en) 1975-12-22 1977-10-25 Chesley Gilman D Memory device and method of testing the same
US4430735A (en) 1981-05-26 1984-02-07 Burroughs Corporation Apparatus and technique for testing IC memories

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4208730A (en) * 1978-08-07 1980-06-17 Rca Corporation Precharge circuit for memory array
JPS5914838B2 (ja) * 1978-11-25 1984-04-06 富士通株式会社 フィ−ルドプログラマブル素子
JPS5693189A (en) 1979-12-18 1981-07-28 Fujitsu Ltd Field programable element
JPS57105897A (en) * 1980-12-23 1982-07-01 Fujitsu Ltd Semiconductor storage device
JPS57105898A (en) * 1980-12-23 1982-07-01 Fujitsu Ltd Field programmable element
DE3313441A1 (de) * 1983-04-13 1984-10-18 Siemens AG, 1000 Berlin und 8000 München Halbleiterspeicher
US4719418A (en) * 1985-02-19 1988-01-12 International Business Machines Corporation Defect leakage screen system
EP0195839B1 (en) * 1985-03-29 1989-08-09 Ibm Deutschland Gmbh Stability testing of semiconductor memories
US5341092A (en) * 1986-09-19 1994-08-23 Actel Corporation Testability architecture and techniques for programmable interconnect architecture
US5223792A (en) * 1986-09-19 1993-06-29 Actel Corporation Testability architecture and techniques for programmable interconnect architecture
US5208530A (en) * 1986-09-19 1993-05-04 Actel Corporation Testability architecture and techniques for programmable interconnect architecture
US4768167A (en) * 1986-09-30 1988-08-30 International Business Machines Corporation High speed CMOS latch with alternate data storage and test functions
US4801869A (en) * 1987-04-27 1989-01-31 International Business Machines Corporation Semiconductor defect monitor for diagnosing processing-induced defects
US4779043A (en) * 1987-08-26 1988-10-18 Hewlett-Packard Company Reversed IC test device and method
JPH0268796A (ja) * 1988-09-02 1990-03-08 Fujitsu Ltd 半導体記憶装置
US5072175A (en) * 1990-09-10 1991-12-10 Compaq Computer Corporation Integrated circuit having improved continuity testability and a system incorporating the same
US5528600A (en) * 1991-01-28 1996-06-18 Actel Corporation Testability circuits for logic arrays
US5166608A (en) * 1991-11-07 1992-11-24 Advanced Micro Devices, Inc. Arrangement for high speed testing of field-effect transistors and memory cells employing the same
US5646547A (en) * 1994-04-28 1997-07-08 Xilinx, Inc. Logic cell which can be configured as a latch without static one's problem
US5561367A (en) * 1992-07-23 1996-10-01 Xilinx, Inc. Structure and method for testing wiring segments in an integrated circuit device
US5538141A (en) * 1994-09-27 1996-07-23 Intel Corporation Test flow assurance using memory imprinting
GB2370126B (en) 2000-07-18 2004-01-21 Sgs Thomson Microelectronics Memory testing
US8046655B2 (en) * 2005-05-18 2011-10-25 Stmicroelectronics Pvt. Ltd. Area efficient memory architecture with decoder self test and debug capability
CN100495057C (zh) * 2005-12-22 2009-06-03 中芯国际集成电路制造(上海)有限公司 利用阵列与解码器进行器件表征的方法与系统

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3795859A (en) * 1972-07-03 1974-03-05 Ibm Method and apparatus for determining the electrical characteristics of a memory cell having field effect transistors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3795859A (en) * 1972-07-03 1974-03-05 Ibm Method and apparatus for determining the electrical characteristics of a memory cell having field effect transistors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4055754A (en) 1975-12-22 1977-10-25 Chesley Gilman D Memory device and method of testing the same
US4430735A (en) 1981-05-26 1984-02-07 Burroughs Corporation Apparatus and technique for testing IC memories

Also Published As

Publication number Publication date
DE2527486A1 (de) 1976-01-15
NL7506539A (nl) 1975-12-30
SE7506873L (sv) 1975-12-29
JPS5114238A (en) 1976-02-04
US3995215A (en) 1976-11-30
SE406829B (sv) 1979-02-26
FR2276661A1 (fr) 1976-01-23
FR2276661B1 (enrdf_load_stackoverflow) 1977-12-02
DE2527486B2 (de) 1982-09-16
CH581886A5 (enrdf_load_stackoverflow) 1976-11-15
DE2527486C3 (de) 1983-05-26
GB1476040A (en) 1977-06-10
AU8067975A (en) 1976-11-04
CA1048645A (en) 1979-02-13
IT1037604B (it) 1979-11-20
JPS5415383B2 (enrdf_load_stackoverflow) 1979-06-14

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