USB476837I5 - - Google Patents

Info

Publication number
USB476837I5
USB476837I5 US47683774A USB476837I5 US B476837 I5 USB476837 I5 US B476837I5 US 47683774 A US47683774 A US 47683774A US B476837 I5 USB476837 I5 US B476837I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to US05476837 priority Critical patent/USB476837I5/en
Priority to GB2060575A priority patent/GB1458327A/en
Priority to JP50065972A priority patent/JPS516475A/ja
Priority to DE2524750A priority patent/DE2524750C3/de
Priority to FR7517620A priority patent/FR2274141A1/fr
Publication of USB476837I5 publication Critical patent/USB476837I5/en
Priority to US05/664,878 priority patent/US4007294A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008Making conductor-insulator-semiconductor electrodes
    • H01L21/28017Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158Making the insulator
    • H01L21/28167Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28185Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/3115Doping the insulating layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/66Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Inorganic Insulating Materials (AREA)
US05476837 1974-06-06 1974-06-06 Pending USB476837I5 (en, 2012)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US05476837 USB476837I5 (en, 2012) 1974-06-06 1974-06-06
GB2060575A GB1458327A (en) 1974-06-06 1975-05-15 Method of treating a layer of silicon dioxide
JP50065972A JPS516475A (en) 1974-06-06 1975-05-30 2sankashirikonhimakunoshoriho
DE2524750A DE2524750C3 (de) 1974-06-06 1975-06-04 Verfahren zum Stabilisieren einer Siliziumoxydschicht
FR7517620A FR2274141A1 (fr) 1974-06-06 1975-06-05 Procede de traitement d'une couche de bioxyde de silicium
US05/664,878 US4007294A (en) 1974-06-06 1976-03-08 Method of treating a layer of silicon dioxide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05476837 USB476837I5 (en, 2012) 1974-06-06 1974-06-06

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US05/664,878 Continuation-In-Part US4007294A (en) 1974-06-06 1976-03-08 Method of treating a layer of silicon dioxide

Publications (1)

Publication Number Publication Date
USB476837I5 true USB476837I5 (en, 2012) 1976-01-20

Family

ID=23893457

Family Applications (1)

Application Number Title Priority Date Filing Date
US05476837 Pending USB476837I5 (en, 2012) 1974-06-06 1974-06-06

Country Status (5)

Country Link
US (1) USB476837I5 (en, 2012)
JP (1) JPS516475A (en, 2012)
DE (1) DE2524750C3 (en, 2012)
FR (1) FR2274141A1 (en, 2012)
GB (1) GB1458327A (en, 2012)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826051A (ja) * 1981-08-06 1983-02-16 Asahi Glass Co Ltd アルカリ拡散防止酸化ケイ素膜の形成されたガラス体
DE3208087A1 (de) * 1982-03-06 1983-09-15 Deutsche Forschungs- und Versuchsanstalt für Luft- und Raumfahrt e.V., 5300 Bonn Verfahren zur passivierung von halbleitern
JPS61164266A (ja) * 1985-01-16 1986-07-24 Nec Corp 耐放射線性の強化された半導体装置
EP0562625B1 (en) * 1992-03-27 1997-06-04 Matsushita Electric Industrial Co., Ltd. A semiconductor device and process

Also Published As

Publication number Publication date
JPS5340872B2 (en, 2012) 1978-10-30
GB1458327A (en) 1976-12-15
JPS516475A (en) 1976-01-20
DE2524750A1 (de) 1975-12-18
DE2524750B2 (de) 1978-06-15
DE2524750C3 (de) 1979-02-22
FR2274141A1 (fr) 1976-01-02

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