USB421026I5 - - Google Patents

Info

Publication number
USB421026I5
USB421026I5 US42102673A USB421026I5 US B421026 I5 USB421026 I5 US B421026I5 US 42102673 A US42102673 A US 42102673A US B421026 I5 USB421026 I5 US B421026I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to US421026A priority Critical patent/US3914785A/en
Priority to US05/501,153 priority patent/US3959036A/en
Priority to CA208,555A priority patent/CA1034469A/en
Priority to SE7414708A priority patent/SE402839B/xx
Priority to BE150906A priority patent/BE822655A/xx
Priority to NL7415531.A priority patent/NL158022B/xx
Priority to FR7439368A priority patent/FR2253279B1/fr
Priority to JP49137088A priority patent/JPS5087579A/ja
Priority to IT70501/74A priority patent/IT1024956B/it
Priority to DE19742457130 priority patent/DE2457130A1/de
Priority to GB52162/74A priority patent/GB1479154A/en
Publication of USB421026I5 publication Critical patent/USB421026I5/en
Application granted granted Critical
Publication of US3914785A publication Critical patent/US3914785A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0116—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3248—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
US421026A 1973-12-03 1973-12-03 Germanium doped GaAs layer as an ohmic contact Expired - Lifetime US3914785A (en)

Priority Applications (11)

Application Number Priority Date Filing Date Title
US421026A US3914785A (en) 1973-12-03 1973-12-03 Germanium doped GaAs layer as an ohmic contact
US05/501,153 US3959036A (en) 1973-12-03 1974-08-28 Method for the production of a germanium doped gas contact layer
CA208,555A CA1034469A (en) 1973-12-03 1974-09-05 Germanium doped gaas layer as an ohmic contact
SE7414708A SE402839B (sv) 1973-12-03 1974-11-22 Halvledaranordning och forfarande for dess framstellning
BE150906A BE822655A (fr) 1973-12-03 1974-11-27 Couche gaas dopee au germanium comme contact ohmique
NL7415531.A NL158022B (nl) 1973-12-03 1974-11-28 Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
FR7439368A FR2253279B1 (enExample) 1973-12-03 1974-12-02
JP49137088A JPS5087579A (enExample) 1973-12-03 1974-12-02
IT70501/74A IT1024956B (it) 1973-12-03 1974-12-02 Procedimento per la fabbricazione di un dispositivo semiconduttone
DE19742457130 DE2457130A1 (de) 1973-12-03 1974-12-03 Germanium-dotierte galliumarsenidschicht als ohmscher kontakt
GB52162/74A GB1479154A (en) 1973-12-03 1974-12-03 Germanium doped gaas devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US421026A US3914785A (en) 1973-12-03 1973-12-03 Germanium doped GaAs layer as an ohmic contact

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US05/501,153 Division US3959036A (en) 1973-12-03 1974-08-28 Method for the production of a germanium doped gas contact layer

Publications (2)

Publication Number Publication Date
USB421026I5 true USB421026I5 (enExample) 1975-01-28
US3914785A US3914785A (en) 1975-10-21

Family

ID=23668885

Family Applications (1)

Application Number Title Priority Date Filing Date
US421026A Expired - Lifetime US3914785A (en) 1973-12-03 1973-12-03 Germanium doped GaAs layer as an ohmic contact

Country Status (10)

Country Link
US (1) US3914785A (enExample)
JP (1) JPS5087579A (enExample)
BE (1) BE822655A (enExample)
CA (1) CA1034469A (enExample)
DE (1) DE2457130A1 (enExample)
FR (1) FR2253279B1 (enExample)
GB (1) GB1479154A (enExample)
IT (1) IT1024956B (enExample)
NL (1) NL158022B (enExample)
SE (1) SE402839B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0164720A3 (en) * 1984-06-14 1987-08-26 International Business Machines Corporation An ohmic contact for an intermetallic compound semiconductor and a method of providing such a contact

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4048627A (en) * 1975-11-17 1977-09-13 Rca Corporation Electroluminescent semiconductor device having a restricted current flow
US4074305A (en) * 1976-11-16 1978-02-14 Bell Telephone Laboratories, Incorporated Gaas layers as contacts to thin film semiconductor layers
US4081824A (en) * 1977-03-24 1978-03-28 Bell Telephone Laboratories, Incorporated Ohmic contact to aluminum-containing compound semiconductors
US4186410A (en) * 1978-06-27 1980-01-29 Bell Telephone Laboratories, Incorporated Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors
US4188710A (en) * 1978-08-11 1980-02-19 The United States Of America As Represented By The Secretary Of The Navy Ohmic contacts for group III-V n-type semiconductors using epitaxial germanium films
US4301188A (en) * 1979-10-01 1981-11-17 Bell Telephone Laboratories, Incorporated Process for producing contact to GaAs active region
US4523212A (en) * 1982-03-12 1985-06-11 The United States Of America As Represented By The Secretary Of The Air Force Simultaneous doped layers for semiconductor devices
US4593307A (en) * 1983-06-30 1986-06-03 International Business Machines Corporation High temperature stable ohmic contact to gallium arsenide
JPH0722141B2 (ja) * 1984-03-07 1995-03-08 住友電気工業株式会社 半導体素子の製造方法
US4853346A (en) * 1987-12-31 1989-08-01 International Business Machines Corporation Ohmic contacts for semiconductor devices and method for forming ohmic contacts
JPH01280368A (ja) * 1988-05-06 1989-11-10 Sharp Corp 化合物半導体発光素子
US5061972A (en) * 1988-12-14 1991-10-29 Cree Research, Inc. Fast recovery high temperature rectifying diode formed in silicon carbide
US5144410A (en) * 1989-03-29 1992-09-01 Vitesse Semiconductor Corporation Ohmic contact for III-V semiconductor devices
JP3959434B2 (ja) * 1995-08-29 2007-08-15 昭和電工株式会社 発光ダイオード素子
JP4050128B2 (ja) * 2002-10-24 2008-02-20 松下電器産業株式会社 ヘテロ接合電界効果型トランジスタ及びその製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3745423A (en) * 1970-12-25 1973-07-10 Hitachi Ltd Optical semiconductor device and method of manufacturing the same
US3746943A (en) * 1969-06-30 1973-07-17 Hitachi Ltd Semiconductor electronic device
US3770518A (en) * 1971-01-28 1973-11-06 Varian Associates Method of making gallium arsenide semiconductive devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3746943A (en) * 1969-06-30 1973-07-17 Hitachi Ltd Semiconductor electronic device
US3745423A (en) * 1970-12-25 1973-07-10 Hitachi Ltd Optical semiconductor device and method of manufacturing the same
US3770518A (en) * 1971-01-28 1973-11-06 Varian Associates Method of making gallium arsenide semiconductive devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0164720A3 (en) * 1984-06-14 1987-08-26 International Business Machines Corporation An ohmic contact for an intermetallic compound semiconductor and a method of providing such a contact

Also Published As

Publication number Publication date
CA1034469A (en) 1978-07-11
NL7415531A (nl) 1975-06-05
BE822655A (fr) 1975-03-14
SE7414708L (enExample) 1975-06-04
FR2253279B1 (enExample) 1978-04-14
GB1479154A (en) 1977-07-06
DE2457130A1 (de) 1975-06-12
IT1024956B (it) 1978-07-20
US3914785A (en) 1975-10-21
NL158022B (nl) 1978-09-15
FR2253279A1 (enExample) 1975-06-27
JPS5087579A (enExample) 1975-07-14
SE402839B (sv) 1978-07-17

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