US9911773B2 - Virtual high dynamic range large-small pixel image sensor - Google Patents

Virtual high dynamic range large-small pixel image sensor Download PDF

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US9911773B2
US9911773B2 US14/743,385 US201514743385A US9911773B2 US 9911773 B2 US9911773 B2 US 9911773B2 US 201514743385 A US201514743385 A US 201514743385A US 9911773 B2 US9911773 B2 US 9911773B2
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photodiode
semiconductor material
photodiodes
disposed over
microlens
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US20160372507A1 (en
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Dajiang Yang
Gang Chen
Oray Orkun Cellek
Zhenhong Fu
Chen-Wei Lu
Duli Mao
Dyson H. Tai
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Omnivision Technologies Inc
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Priority to CN201610318754.0A priority patent/CN106257679B/zh
Priority to TW105116506A priority patent/TWI581415B/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/585—Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N5/35563—
    • H04N5/374—

Definitions

  • the present invention relates generally to imaging, and more specifically, the present invention is directed to high dynamic range image sensors.
  • Image sensors have become ubiquitous. They are widely used in digital still cameras, cellular phones, security cameras, as well as, medical, automobile, and other applications.
  • the technology used to manufacture image sensors such as for example complementary metal-oxide-semiconductor (CMOS) image sensors (CIS), has continued to advance at a great pace. For example, the demands for higher resolution and lower power consumption have encouraged the further miniaturization and integration of these image sensors.
  • CMOS complementary metal-oxide-semiconductor
  • High dynamic range (HDR) image sensors have become useful for many applications.
  • ordinary image sensors including for example charge coupled device (CCD) and CMOS image sensors, have a dynamic range of approximately 70 dB dynamic range.
  • the human eye has a dynamic range of up to approximately 100 dB.
  • image sensors having an increased dynamic range is beneficial.
  • image sensors having a dynamic range of more than 100 dB dynamic range are needed in the automotive industry are necessary in order to handle different driving conditions, such as driving from a dark tunnel into bright sunlight.
  • driving conditions such as driving from a dark tunnel into bright sunlight.
  • many applications may require image sensors with at least 90 dB of dynamic range or more to accommodate a wide range of lighting situations, varying from low light conditions to bright light conditions.
  • FIG. 1 is a diagram illustrating one example of an imaging system including an example virtual high dynamic range large-small pixel image sensor in accordance with the teachings of the present invention.
  • FIG. 2 is a schematic illustrating one example of HDR pixel circuitry of an image sensor including an example virtual high dynamic range large-small pixel in accordance with the teachings of the present invention.
  • FIG. 3 illustrates a cross-section view of a portion of an example virtual high dynamic range large-small pixel image sensor in accordance with the teachings of the present invention.
  • FIG. 4A illustrates a top down view of a portion of an example virtual high dynamic range large-small pixel image sensor in accordance with the teachings of the present invention.
  • FIG. 4B illustrates a top down view of an example color filter array arranged over a portion showing an example virtual high dynamic range large-small pixel image sensor in accordance with the teachings of the present invention.
  • Examples in accordance with the teaching of the present invention describe a virtual high dynamic range (HDR) large-small pixel image sensor in which a plurality of photodiodes are arranged into virtual large-small pixel groupings (e.g., pairs) including virtual large and virtual small symmetrical pixels having photodiodes that are identically sized, and fabricated with identical semiconductor processing conditions.
  • HDR high dynamic range
  • the photodiodes of the large-small pixel groupings having the same size, processing is simplified since the same semiconductor fabrication process conditions can be used when fabricating the photodiodes.
  • the virtual small photodiode has a full well capacity substantially equal to the full well capacity of the virtual large photodiode, which provides improved high light dynamic range for the virtual small photodiode.
  • FIG. 1 is a diagram that shows generally one example of a virtual HDR large-small pixel image sensing system 100 including an image sensor having example pixel array 102 with virtual large-small pixels 110 in accordance with the teachings of the present invention.
  • the virtual large-small pixels 110 may include pixels that that include at least a virtual large photodiode and a virtual small photodiode, which have symmetrical pixels having the same sized photodiodes that are fabricated with the same semiconductor process conditions, but have different light sensitivity in accordance with the teachings of the present invention.
  • virtual HDR large-small pixel image sensing system 100 includes pixel array 102 coupled to control circuitry 108 , and readout circuitry 104 , which is coupled to function logic 106 .
  • pixel array 102 is a two-dimensional (2D) array of imaging sensors or virtual large-small pixels 110 (e.g., pixels P 1 , P 2 . . . , Pn).
  • each virtual large-small pixels 110 is a CMOS imaging pixel including at least a virtual large photodiode and a virtual small photodiode.
  • each virtual large-small pixel 110 is arranged into a row (e.g., rows R 1 to Ry) and a column (e.g., column C 1 to Cx) to acquire image data of a person, place, object, etc., which can then be used to render an image of the person, place, object, etc.
  • readout circuitry 104 may include amplification circuitry, analog-to-digital (ADC) conversion circuitry, or otherwise.
  • Function logic 106 may simply store the image data or even manipulate the image data by applying post image effects (e.g., crop, rotate, remove red eye, adjust brightness, adjust contrast, or otherwise).
  • readout circuitry 104 may read out a row of image data at a time along readout column lines (illustrated) or may read out the image data using a variety of other techniques (not illustrated), such as a serial read out or a full parallel read out of all pixels simultaneously.
  • control circuitry 108 is coupled to pixel array 102 to control operational characteristics of pixel array 102 .
  • control circuitry 108 may generate a shutter signal for controlling image acquisition.
  • the shutter signal is a global shutter signal for simultaneously enabling all pixels within pixel array 102 to simultaneously capture their respective image data during a single acquisition window.
  • the shutter signal is a rolling shutter signal such that each row, column, or group of pixels is sequentially enabled during consecutive acquisition windows.
  • FIG. 2 is a schematic illustrating one example of a virtual large-small pixel 210 in accordance with the teachings of the present invention.
  • virtual large-small pixel 110 may be one of the plurality of virtual large-small pixels 110 included in an image sensor with the example pixel array 102 of the virtual HDR large-small pixel image sensing system 100 illustrated above in FIG. 1 .
  • virtual large-small pixel 210 is provided for explanation purposes and therefore represents just one possible architecture for implementing each pixel within pixel array 102 of FIG. 1 , and that examples in accordance with the teachings of the present invention are not limited to specific pixel architectures. Indeed, one of ordinary skill in the art having the benefit of the instant disclosure will understand that the present teachings are applicable to 3T, 4T, 5T designs, as well as various other suitable pixel architectures in accordance with the teachings of the present invention.
  • virtual large-small pixel 210 includes a virtual large-small pixel grouping, which includes a virtual large pixel, which includes a transfer transistor T 1 L 218 coupled to a virtual large photodiode PD L 214 , and a virtual small pixel, which includes a transfer transistor T 1 S 220 coupled to a virtual small photodiode PD S 216 , as shown.
  • virtual large photodiode PD L 214 and the virtual small photodiode PD S 216 have photodiodes that are identically sized and are symmetrically fabricated using identical semiconductor processing conditions.
  • the virtual small photodiode PD S 216 also includes a mask 230 having a small opening 232 that is patterned along an optical path for incident light 234 to the virtual small photodiode PD S 216 in front of the virtual small photodiode PD S 216 , while there is no mask in front of the virtual large photodiode PD L 214 in accordance with the teachings of the present invention.
  • the size of the small opening 232 in the mask 230 through which incident light 234 is directed to the virtual small photodiode PD S 216 controls the light sensitivity of the virtual small photodiode PD S 216 in accordance with the teachings of the present invention. Since mask 230 is disposed only in front of the virtual small photodiode PD S 216 and not in front of virtual large photodiode PD L 214 , virtual small photodiode PD S 216 and virtual large photodiode PD L 214 have different sensitivities to incident light 234 . By utilizing both virtual small photodiode PD S 216 and virtual large photodiode PD L 214 in virtual large-small pixel 210 , HDR imaging sensing is realized in accordance with the teachings of the present invention.
  • charge is photogenerated in virtual small photodiode PD S 216 and virtual large photodiode PD L 214 in response to incident light 234 that reaches virtual small photodiode PD S 216 and virtual large photodiode PD L 214 .
  • the charge that is accumulated in virtual large photodiode PD L 214 is switched through transfer transistor T 1 L 218 to a floating drain FD 228 in response to a control signal TX L
  • charge that is accumulated in virtual small photodiode PD S 216 is switched through transfer transistor T 1 S 220 to floating drain FD 228 in response to a control signal TX S .
  • virtual large-small pixel 210 also includes an amplifier transistor T 3 224 that has a gate terminal coupled to floating drain FD 228 .
  • the charges from virtual large photodiode PD L 214 and virtual small photodiode PD S 216 are separately switched to floating drain FD 228 , which is coupled to amplifier transistor T 3 224 .
  • amplifier transistor T 3 224 is coupled in a source follower configuration as shown, which therefore amplifies an input signal at the gate terminal of amplifier transistor T 3 224 to an output signal at the source terminal of amplifier transistor T 3 224 .
  • row select transistor T 4 226 is coupled to the source terminal of amplifier transistor T 3 224 to selectively switch the output of amplifier transistor T 3 224 to readout column 212 in response to a control signal SEL.
  • virtual large-small pixel 210 also includes reset transistor 222 coupled to floating drain FD 228 , virtual large photodiode PD L 214 , and virtual small photodiode PD S 216 , which may be used to reset charge accumulated in pixel 210 in response to a reset signal RST.
  • the charge accumulated in floating drain FD 228 , virtual large photodiode PD L 214 , and virtual small photodiode PD S 216 can be reset during an initialization period of virtual large-small pixel 210 , or for example each time after charge information has been read out from virtual large-small pixel 210 prior to accumulating charge in virtual large photodiode PD L 214 and virtual small photodiode PD S 216 for the acquisition of a new HDR image in accordance with the teachings of the present invention.
  • FIG. 3 illustrates a cross-section view of a portion of an example pixel array 302 included in an image sensor of an example virtual HDR large-small pixel image sensing system in accordance with the teachings of the present invention.
  • the portion of example pixel array 302 illustrated in FIG. 3 may be one example of a portion of an implementation of pixel array 102 of virtual HDR large-small pixel image sensing system 100 shown in FIG. 1 , including for example the virtual large photodiode PD L 214 and virtual small photodiode PD S 216 shown in FIG. 2 , and that similarly named and numbered elements referenced below are coupled and function similar to as described above.
  • pixel array 302 includes a plurality of photodiodes disposed in semiconductor material 336 .
  • the semiconductor material may include silicon, or another suitable semiconductor material.
  • the plurality of photodiodes include virtual small photodiode PD S 316 A, virtual large photodiode PD L 314 , and virtual small photodiode PD S 316 B disposed in semiconductor material 336 .
  • the virtual small photodiode PD S 316 A, virtual large photodiode PD L 314 , and virtual small photodiode PD S 316 B are disposed proximate to a front side 350 of semiconductor material 336 .
  • each of the virtual small photodiode PD S 316 A, virtual large photodiode PD L 314 , and virtual small photodiode PD S 316 B share the same fabrication process conditions, same size, same full well capacity, and symmetry in design.
  • each of the plurality of photodiodes is separated in the semiconductor material 336 by shallow trench isolation (STI) structures 338 .
  • STI shallow trench isolation
  • each of the plurality of photodiodes is illuminated with incident light 334 that is directed through a back side 348 of semiconductor material 336 as shown.
  • an oxide layer 340 is disposed over the back side 348 of semiconductor material 336
  • a color filter array 342 is disposed over the oxide layer 340
  • an array of microlenses disposed over the color filter array 342 .
  • color filter array includes a mosaic of color filters, each of which is disposed over a respective photodiode of the pixel array 302 as shown to capture color information.
  • the array of microlenses includes a plurality of microlenses, each of which is disposed over a respective photodiode of the pixel array 302 as shown to direct incident light 334 to a respective photodiode of the pixel array 302 .
  • incident light 334 is directed through a microlens 344 A of the array of microlenses, through a respective color filter of color filter array 342 , through oxide layer 340 , through back side 348 of semiconductor material 336 to virtual small photodiode PD S 316 A.
  • incident light 334 is directed through a microlens 346 of the array of microlenses, through a respective color filter of color filter array 342 , through oxide layer 340 , through back side 348 of semiconductor material 336 to virtual large photodiode PD L 314 .
  • incident light 334 is directed through a microlens 344 B of the array of microlenses, through a respective color filter of color filter array 342 , through oxide layer 340 , through back side 348 of semiconductor material 336 to virtual small photodiode PD S 316 B.
  • pixel array 302 also includes a mask that is patterned over the back side 348 of semiconductor material 336 along an optical path of incident light 334 to each respective photodiode in the semiconductor material 336 .
  • the mask disposed on the semiconductor material 336 between the plurality of microlenses and the plurality of photodiodes in the semiconductor material 336 .
  • the mask is covered with oxide layer 340 as shown, and is patterned such that the mask is disposed only over the virtual small photodiodes, and is not disposed over any of the virtual large photodiodes.
  • the mask is further patterned such that the mask that is disposed over a virtual small photodiode defines an opening through which only a portion of the incident light is allowed to reach the underlying virtual small photodiode, while a portion of the incident light is masked (e.g., blocked, obstructed, prevented, etc.) by the mask from reaching the underlying virtual small photodiode in accordance with the teachings of the present invention.
  • FIG. 3 illustrates mask 330 A disposed over back side 348 of semiconductor material 336 over virtual small photodiode PD S 316 A, and mask 330 B disposed over back side 348 of semiconductor material 336 over virtual small photodiode PD S 316 B.
  • mask 330 A includes an opening 332 A through which a portion of incident light 334 directed through microlens 344 A is allowed to reach underlying virtual small photodiode PD S 316 A.
  • mask 330 A includes an opening 332 B through which a portion of incident light 334 directed through microlens 344 B is allowed to reach virtual small photodiode PD S 316 B.
  • a portion of incident light 334 directed through microlens 344 B is blocked by mask 330 B from reaching the underlying virtual small photodiode PD S 316 B as shown.
  • the mask e.g., mask 330 A, mask 330 B
  • the mask over back side 348 of semiconductor material 336 may by a metal mask, including for example aluminum, tungsten, or another suitable masking material.
  • the sizes of the openings may be selected based on the desired sensitivity ratios as well as other design requirements of pixel array 302 in accordance with the teachings of the present invention.
  • each photodiode including virtual small photodiode PD S 316 A and PD S 316 B, and with virtual large photodiode PD L 314 , may be sized at around 2 ⁇ 2 to 4 ⁇ 4 ⁇ m, and each mask opening, including opening 332 A and 332 B, may be controlled at 0.7 ⁇ 0.7 ⁇ m to 1.5 ⁇ 1.5 ⁇ m. It is appreciated that the mask opening sizes are sufficiently large to reduce or minimize diffracting effects for visible light wavelengths.
  • FIG. 4A illustrates a top down view of a portion of a pixel array 402 included in an example virtual high dynamic range large-small pixel image sensor in accordance with the teachings of the present invention.
  • the portion of example pixel array 402 illustrated in FIG. 4 may be a top down view of a one example of a portion of an implementation of pixel array 102 of virtual HDR large-small pixel image sensing system 100 shown in FIG. 1 , including for example the virtual large photodiode PD L 214 and virtual small photodiode PD S 216 shown in FIG. 2 , or a top down view of the example portion of the pixel array 302 of FIG.
  • cross-section example pixel array 302 illustrated in FIG. 3 may be a cross-section along dashed line A-A′ of pixel array 402 of FIG. 4A .
  • pixel array 402 includes a plurality of virtual large-small pixel groupings, with each grouping including for example a virtual small photodiode PD S and virtual large photodiode PD L .
  • Each of virtual small photodiode PD S and virtual large photodiode PD L is identically sized and symmetrically fabricated using the same semiconductor processing conditions.
  • there is a mask 430 disposed over each virtual small photodiode PD S and there is no mask 430 disposed over any of the virtual large photodiodes PD L . Accordingly, it is appreciated that in the depicted example, the ratio of the total number of masks 430 to the combined total number of virtual large and small photodiodes (e.g., PD L +PD S ) in pixel array 402 is 1:2.
  • each one of the plurality of masks 430 includes an opening 432 that allows only a portion of incident light to reach the respective underlying virtual small photodiode PD S .
  • each light virtual small photodiode PD S has low light sensitivity
  • each virtual large photodiodes PD L has high light sensitivity in accordance with the teachings of the present invention.
  • the sizes of the openings 432 in each mask 430 through which the incident light is directed to the virtual small photodiode PD S controls the light sensitivity of the virtual small photodiode PD S in accordance with the teachings of the present invention.
  • each virtual large photodiode PD L and its corresponding virtual small photodiode PD S in a virtual large-small pixel grouping is arranged in the semiconductor material in adjacent columns and rows of pixel array 402 as shown.
  • each respective virtual large photodiode PD L and its corresponding virtual small photodiode PD S of the virtual large-small pixel grouping are adjacent to each other and arranged along a diagonal in pixel array 402 as shown in the example of FIG. 4A .
  • FIG. 4B illustrates a top down view of the portion of the pixel array 402 showing the example color filter array 440 arranged over the portion of an example virtual high dynamic range large-small pixel image sensor as illustrated in FIG. 4A .
  • color filter array 440 includes a mosaic of color filters, each of which is disposed over a respective photodiode of the pixel array 402 as shown to capture color information.
  • the color filter array 440 includes red (R), blue (B), and green (G) color filters.
  • R red
  • B blue
  • G green
  • FIG. 4B depicts a color filter array 440 in which the filter itself is depicted as being rotated 45 degrees.
  • each pair (e.g., grouping) of virtual large photodiode PD L and virtual small photodiode PD S in pixel array 402 has the same color filter over them.
  • the corresponding adjacent virtual small photodiode PD S of that pair also has a red (R) color filter.
  • R red
  • R red
  • G green
  • B blue
  • B blue
  • the example color filter array 440 illustrated in FIG. 4B shows that there are always two adjacent photodiodes detecting the same color.
  • One reason for this type of color array is to contribute to pixel “binning,” where two adjacent photodiodes can be merged, making the sensor itself more “sensitive” to light.
  • Another reason is for the sensor to record two different exposures, which is then merged to produce an image with greater dynamic range.
  • the underlying circuitry has two read-out channels that take their information from alternate rows of the sensor. The result is that it can act like two interleaved sensors, with different exposure times for each half of the photosites. Half of the photosites can be intentionally underexposed so that they fully capture the brighter areas of the scene. This retained highlight information can then be blended in with the output from the other half of the sensor that is recording a “full” exposure, again making use of the close spacing of similarly colored photodiodes in accordance with the teachings of the present invention.

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US14/743,385 US9911773B2 (en) 2015-06-18 2015-06-18 Virtual high dynamic range large-small pixel image sensor
CN201610318754.0A CN106257679B (zh) 2015-06-18 2016-05-13 图像传感器及成像系统
TW105116506A TWI581415B (zh) 2015-06-18 2016-05-26 虛擬高動態範圍大小像素影像感測器

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