US9711336B2 - Backing plate-integrated metal sputtering target and method of producing same - Google Patents

Backing plate-integrated metal sputtering target and method of producing same Download PDF

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US9711336B2
US9711336B2 US14/779,345 US201414779345A US9711336B2 US 9711336 B2 US9711336 B2 US 9711336B2 US 201414779345 A US201414779345 A US 201414779345A US 9711336 B2 US9711336 B2 US 9711336B2
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backing plate
sputtering target
target
flange part
integrated metal
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US20160071705A1 (en
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Shiro Tsukamoto
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JX Nippon Mining and Metals Corp
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JX Nippon Mining and Metals Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21K—MAKING FORGED OR PRESSED METAL PRODUCTS, e.g. HORSE-SHOES, RIVETS, BOLTS OR WHEELS
    • B21K23/00—Making other articles
    • B21K23/04—Making other articles flanged articles

Definitions

  • the present invention relates to a sputtering target for use in forming thin films of semiconductor devices.
  • the present invention relates to a metal sputtering target integrated with a backing plate, and a method of producing the same.
  • metal target includes targets made from metal and made from alloy. In particular, in the case of a titanium target, this includes a titanium alloy target.
  • a sputtering target is often bonded with a backing plate by using a bonding material or the like, and after using the target, it is necessary to stop the sputtering equipment to replace the spent target with a new one. Nevertheless, this downtime deteriorates the production efficiency.
  • Patent Document 1 discloses a technology of producing an integrally-structured target in which the target and the backing plate are produced with the same material, wherein, by subjecting the target to plastic working in order to increase the mechanical strength, the target will not be subject to warping or other deformation even when sputtered at a high power.
  • Patent Document 2 describes a technology of causing the non-erosion portion of the sputtering target to be irradiated with a laser so as to form a recess, and causing the hardness of the bottom face of such recess to be smaller than the hardness of the surface of the non-erosion portion in order to prevent the generation of coarse particles. Nevertheless, since this technology softens the melt portion via laser irradiation and causes the hardness of the bottom face of the recess to be smaller in comparison to the hardness of the surface of the non-erosion portion, Patent Document 2 does not aim to inhibit the deformation of the target during sputtering by increasing the strength of the target.
  • Patent Document 3 provides an aluminum or aluminum alloy sputtering target and a method of producing such a target. Pure aluminum or aluminum alloy is mechanically processed into a round blank, and the blank is subject to recrystallization heat treatment in order to realize the required crystal grain size and crystal texture. After this heat treatment step, additional strain of 10 to 50% is applied to the blank in order to increase the mechanical strength. Furthermore, strain in the flange area of the target is larger than the strain in the other target areas, and strain is applied to the flange area at a ratio of approximately 20 to 60%. Subsequently, the blank is subject to finishing processing to obtain a sputtering target possessing the required crystal texture and sufficient mechanical strength.
  • Patent Document 4 describes a backing plate-integrated sputtering target in which the Vickers hardness Hv of the flange part is 90 or more, and the 0.2% yield stress of the flange part is 6.98 ⁇ 10 7 N/m 2 or more.
  • Patent Document 3 and Patent Document 4 describe a backing plate-integrated sputtering target, since their production conditions require the flange part to be simultaneously subject to plastic working, strain is applied from the periphery to the center part of the target pursuant to the plastic working of the flange part, and there is a problem in that there may be variations in the hardness of the target.
  • Patent Document 1 JP 2002-121662 A
  • Patent Document 2 JP H09-209133 A
  • Patent Document 3 JP 2012-515847 A
  • Patent Document 4 International Publication No. WO 2013/047199
  • An object of the present invention is to provide a backing plate-integrated sputtering target in which, by increasing the mechanical strength of only the flange part of the target, it is possible to inhibit the deformation of the target during sputtering and a change in the conventional sputtering properties; thereby the formation of thin films having superior uniformity can be realized, and the yield and reliability of semiconductor products, which are being subject to further miniaturization and higher integration, can be improved.
  • an object of the present invention is to provide a backing plate-integrated metal sputtering target, wherein the Vickers hardness Hv of the flange part that acts as a backing plate in the backing plate-integrated titanium sputtering target is 110 or more and the hardness of the sputtering surface of the titanium target is uniform.
  • the present invention can achieve the foregoing object by providing the following invention.
  • a backing plate-integrated metal sputtering target comprising a flange part that is formed integrally with a target of which periphery becomes a backing plate, wherein the flange part comprises a structure obtained by repeating partial forging.
  • the backing plate-integrated metal sputtering target according to any one of 1) to 3) above, wherein the backing plate-integrated metal sputtering target is made from titanium or titanium alloy, and Vickers hardness Hv of the flange part that acts as a backing plate is 110 or more.
  • the present application additionally provides the following invention.
  • a method of producing a backing plate-integrated metal sputtering target wherein, upon forging a flange part that acts as a backing plate, partial forging is performed, and the flange part is obtained by ultimately forging an entire outer periphery of a material.
  • the backing plate-integrated sputtering target of the present invention yields superior effects in which, by increasing the mechanical strength of only the flange part of the target, it is possible to inhibit the deformation of the target during sputtering and a change in the conventional sputtering properties; thereby the formation of thin films having superior uniformity can be realized, and the yield and reliability of semiconductor products, which are being subject to further miniaturization and higher integration, can be improved.
  • the present invention yields a superior effect of being able to provide a backing plate-integrated metal sputtering target in which the Vickers hardness Hv of the flange part that acts as a backing plate in the backing plate-integrated titanium sputtering target is 110 or more and the hardness of the sputtering surface of the titanium target is uniform.
  • FIG. 1 This is a diagram showing the process of conventional forging (die forging).
  • FIG. 2 This is a diagram showing the process of forging of the present invention.
  • the term “backing plate-integrated sputtering target” means that a sputtering target and a backing plate are monolithic and produced from the same material.
  • a conventional two-piece product consisting of a sputtering target and a backing plate, since the mechanical strength can be retained by means of the backing plate, it does not encounter the problem of the target undergoing deformation (warping or the like) during sputtering even if the mechanical strength becomes insufficient as encountered in the present invention.
  • the problem of deformation becomes notable when the sputtering target and the backing plate are monolithic and sufficient thickness is achieved as in the present invention.
  • the sputtering target and the backing plate are often bonded using a bonding material or the like, but after using the target, it is necessary to stop the sputtering equipment to replace the spent target with a new one, and this downtime deteriorates the production efficiency.
  • the present invention provides a backing plate-integrated metal sputtering target comprising a flange part that is formed integrally with a target of which periphery becomes a backing plate, wherein the flange part comprises a structure obtained by repeating partial forging.
  • the target and the backing plate are each produced as separate items, and these are ultimately assembled (by bonding via welding or the like as needed), but the present invention uses the same material to realize a monolithic structure.
  • the target material and the backing plate material before being processed (forged) in the present invention have the same component composition and structure.
  • the flange part of the present invention comprises a structure obtained by repeating partial forging, and this structure is substantially a forged structure. Nevertheless, partial forging generates less strain in comparison to the case of performing forging all at once, and is characterized in that the strain applied to the target can be considerably reduced in comparison to the conventional forging method (method of performing forging all at once).
  • the flange part is a joint for mounting the backing plate-integrated target on the sputtering equipment, and the flange part itself is never subject to sputtering.
  • the portion corresponding to the flange part is sequentially processed, and the surface level of each processed site will become lower than the target.
  • the flange part is in a range of roughly 20% from the maximum diameter of the backing plate-integrated target, but this may be arbitrarily determined according to the size of the backing plate-integrated target, and the range thereof may also be set to be in a range of 10 to 30%.
  • the mechanical strength (hardness) of the overall target is insufficient, this is undesirable since the target will be subject to warping during sputtering and the film thickness uniformity will deteriorate. Accordingly, the hardness of the sputtering surface of the target being uniform is an important requirement in order to perform uniform sputtering.
  • a target is generally produced based on the process shown in FIG. 1 .
  • a backing plate-integrated sputtering target is produced, for instance, by casting metal or alloy obtained through melting to prepare an ingot (billet), forging the prepared ingot at a predetermined forging ratio, and thereafter rolling the forged ingot at a predetermined rolling reduction to obtain a rolled plate.
  • the periphery of the rolled plate (corresponds to the flange part) is forged (hammering, die forging, etc.) to increase the mechanical strength.
  • a metal target raw material Ti material in FIG. 1
  • a mold having a hollow space is placed thereon, pressing is performed with the anvils, and the flange part is molded by die forging.
  • the outer periphery of the metal material is partially processed in each forging operation in order to form the flange part.
  • the pressing tool is not applied to the entire portion of forming the flange, but rather applied partially to perform the press.
  • the strain generated at the target periphery decreased significantly.
  • the non-pressed portion can also be subject to pressing by rotating the target.
  • the mold is subsequently rotated so that another area on the outer periphery of the metal material is subject to partial forging, and this is repeated until the entire periphery is ultimately forged to produce the flange part.
  • the amount of strain that is generated in the target can be reduced with a single forging operation, and even when forging is additionally performed to the entire perimeter of the target, since this is a repetition of the small amount of strain that is generated in a single forging operation, the generation of strain on the target periphery can be significantly reduced.
  • the size and frequency of forging can be arbitrarily adjusted by changing the size of the pressing tool.
  • a backing plate-integrated metal sputtering target can be produced by performing forging multiple times.
  • the entire perimeter of the metal material is processed in a single forging operation, and more preferably 1 ⁇ 6 to 1 ⁇ 8.
  • the outer periphery of the target can be machined to eliminate the portion containing the strain resulting from forging, and the method of producing a backing plate-integrated metal sputtering target according to the present invention can considerably reduce the amount to be machined.
  • the portion where strain are generated on the sputtering surface of the target as a forged product is within 3 mm from the outer periphery, and it could be said that the amount to be machined and removed is extremely small.
  • a backing plate-integrated metal sputtering target is of a disk shape, but it may also be molded in an oval shape or a rectangular shape.
  • the Vickers hardness Hv of the flange part that acts as a backing plate can be made to be 110 or more, and the hardness of the sputtering surface can be made to be uniform.
  • the forging conditions can be arbitrarily decided according to the material, for instance, in the case of producing a backing plate-integrated sputtering target made from titanium or titanium alloy, the heating temperature during forging can be set to 700° C. or less, and the forging reduction can be set to 10% or more.
  • the sputtering properties can be stabilized.
  • the improvement of the foregoing properties is an attribute that is common to the backing plate-integrated metal sputtering target of the present invention and the method of producing such a target.
  • a rolled plate for a Ti one-piece target was subject to forging based on the partial pressing explained above with reference to FIG. 2 .
  • the heating temperature of titanium was 500° C., and the forging reduction of the flange part was 30%.
  • Hardness of the flange part was measured at four locations every 90°. Specifically, while rotating the measurement position every 90° along the flange part, measurement was performed, respectively, at the midst of the length of the rotated part of the flange.
  • the hard portion of the outermost periphery of the target was removed via finishing processing.
  • the amount of such removed portion was an extremely small in comparison to conventional technologies, and the effect of this Example was extremely high.
  • a rolled plate for a Ti one-piece target was subject to forging based on the partial pressing explained above with reference to FIG. 2 .
  • the titanium was in a room temperature of 25° C., and the forging reduction of the flange part was 20%.
  • the hard portion of the outermost periphery of the target was removed via finishing processing. Amount of such removed portion was an extremely small in comparison to conventional technologies, and the effect of this Example was extremely high.
  • the uniformity was favorable at approximately 4.5%, and the number of particles was also small at 6 particles/wafer.
  • the warping of the target after use was 0.1 mm, and a favorable Ti sputtering target was obtained.
  • a rolled plate for a Ti one-piece target was subject to forging based on the partial pressing explained above with reference to FIG. 2 .
  • the heating temperature of titanium was 700° C., and the forging reduction of the flange part was 30%.
  • the hard portion of the outermost periphery of the target was removed via finishing processing. Amount of such removed portion was an extremely small in comparison to conventional technologies, and the effect of this Example was extremely high.
  • a rolled plate for a Ti one-piece target was subject to forging based on the partial pressing explained above with reference to FIG. 2 .
  • the heating temperature of titanium was 500° C., and the forging reduction of the flange part was 10%.
  • the hard portion of the outermost periphery of the target was removed via finishing processing. Amount of such removed portion was an extremely small in comparison to conventional technologies, and the effect of this Example was extremely high.
  • the uniformity was favorable at approximately 5%, and the number of particles was also small at 10 particles/wafer.
  • the warping of the target after use was 0.2 mm, and a favorable Ti sputtering target was obtained.
  • a rolled plate for a Ti one-piece target was subject to die forging based on overall press, which is a conventional method.
  • the heating temperature of titanium was 500° C.
  • the forging reduction of the flange part was 30%.
  • the hard portion of the outermost periphery of the target could not be completely removed even when finishing processing was performed, and roughly 3.0 mm of the hard portion had remained.
  • the number of particles was 8 particles/wafer, and the warping of the target after use was favorable at 0.1 mm, but the uniformity was inferior at approximately 7%.
  • a rolled plate for a Ti one-piece target was machined to produce a target.
  • the uniformity was slightly inferior at 6%, and the number of particles was large at 13 particles/wafer.
  • the warping of the target after use was 0.5 mm.
  • a major problem with this Comparative Example is that many waste materials were generated due to machining, and, due to the deterioration in the strength of the flange part, considerable warping was caused by the heat generated during the sputtering process, and the uniformity deteriorated.
  • a rolled plate for a Ti one-piece target was subject to die forging based on overall press, which is a conventional method.
  • the heating temperature of titanium was 800° C., and the forging reduction of the flange part was 30%.
  • the number of particles was 12 particles/wafer, and the warping of the target after use was considerable at 0.4 mm, and the uniformity was inferior at approximately 6%.
  • Particles were measured with the particle counter (Surfscan SP1-DLS) manufactured by KLA-Tencor, by which particles having a size of 0.2 ⁇ m or larger were measured.
  • the present invention provides a backing plate-integrated sputtering target, and by increasing the mechanical strength of only the flange part of the target, it is possible to inhibit the deformation of the target during sputtering and a change in the conventional sputtering properties; thereby the formation of thin films having superior uniformity can be realized, and the yield and reliability of semiconductor products, which are being subject to further miniaturization and higher integration, can be improved.
  • the present invention can provide a backing plate-integrated metal sputtering target in which the Vickers hardness Hv of the flange part is 110 or more and the hardness of the sputtering surface of the titanium target is uniform, the present invention is effective as a backing plate of a backing plate-integrated titanium sputtering target.
US14/779,345 2013-09-12 2014-09-05 Backing plate-integrated metal sputtering target and method of producing same Active US9711336B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013-189387 2013-09-12
JP2013189387 2013-09-12
PCT/JP2014/073504 WO2015037533A1 (ja) 2013-09-12 2014-09-05 バッキングプレート一体型の金属製スパッタリングターゲット及びその製造方法

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US20160071705A1 US20160071705A1 (en) 2016-03-10
US9711336B2 true US9711336B2 (en) 2017-07-18

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US (1) US9711336B2 (zh)
JP (2) JP6038305B2 (zh)
KR (3) KR102364005B1 (zh)
SG (1) SG11201507979QA (zh)
TW (2) TWI688667B (zh)
WO (1) WO2015037533A1 (zh)

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EP2784174B1 (en) 2012-01-12 2017-11-01 JX Nippon Mining & Metals Corporation High-purity copper sputtering target
JP6367483B2 (ja) 2015-05-21 2018-08-01 Ｊｘ金属株式会社 スパッタリングターゲット
JP6728839B2 (ja) * 2016-03-24 2020-07-22 大同特殊鋼株式会社 プレス成形品の製造方法およびスパッタリングターゲット材
US10760156B2 (en) 2017-10-13 2020-09-01 Honeywell International Inc. Copper manganese sputtering target
US11035036B2 (en) 2018-02-01 2021-06-15 Honeywell International Inc. Method of forming copper alloy sputtering targets with refined shape and microstructure
JP2019173048A (ja) 2018-03-26 2019-10-10 Ｊｘ金属株式会社 スパッタリングターゲット部材及びその製造方法
WO2019225472A1 (ja) * 2018-05-21 2019-11-28 株式会社アルバック スパッタリングターゲット及びその製造方法
TWI731799B (zh) * 2020-10-06 2021-06-21 中國鋼鐵股份有限公司 高純度靶材之製作方法

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WO2015037533A1 (ja) 2015-03-19
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SG11201507979QA (en) 2015-11-27
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