US9419223B2 - Organic light-emitting display device and method of manufacturing the same - Google Patents
Organic light-emitting display device and method of manufacturing the same Download PDFInfo
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- US9419223B2 US9419223B2 US14/096,995 US201314096995A US9419223B2 US 9419223 B2 US9419223 B2 US 9419223B2 US 201314096995 A US201314096995 A US 201314096995A US 9419223 B2 US9419223 B2 US 9419223B2
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Images
Classifications
-
- H01L51/0005—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- H01L27/3246—
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/851—Division of substrate
-
- H01L27/3211—
Definitions
- the present disclosure relates to an organic light-emitting display device and a method of manufacturing the same.
- organic light-emitting display devices have been identified as next generation display devices, due to their superior characteristics such as wide viewing angles, good contrast, and rapid response times.
- the inlets may be omitted between adjacent sub-pixels emitting light of different wavelengths.
- a depth of an inlet may be about 1 ⁇ 4 to about 1 ⁇ 2 of a thickness of the pixel-defining layer.
- an organic light-emitting display device includes a plurality of first electrodes, wherein each first electrode corresponds to a sub-pixel; a pixel-defining layer comprising a plurality of first openings exposing at least a portion of the first electrodes, and a plurality of second openings exposing at least a portion of a substrate; an intermediate layer disposed on the exposed portions of the first electrodes and the substrate; and an opposite electrode disposed on the intermediate layer and the pixel-defining layer, wherein the second openings are selectively disposed between adjacent sub-pixels emitting light of a same wavelength.
- the second openings may be omitted between adjacent sub-pixels emitting light of different wavelengths.
- a method of manufacturing an organic light-emitting display device includes forming a plurality of first electrodes, wherein each first electrode corresponds to a sub-pixel; forming a pixel-defining layer comprising a plurality of first openings, wherein the first openings expose at least a portion of the first electrodes; forming an intermediate layer on the exposed portion of the first electrodes; and forming an opposite electrode on the intermediate layer and the pixel-defining layer.
- the method may include forming a plurality of inlets on an upper surface of the pixel-defining layer; and forming the intermediate layer on the exposed portion of the first electrodes and in the inlets, wherein the inlets may be selectively formed between adjacent sub-pixels emitting light of a same wavelength.
- the inlets may be omitted between adjacent sub-pixels emitting light of different wavelengths.
- a first distance may correspond to a distance between respective centers of two adjacent drops of intermediate layer disposed at a first opening
- a second distance may correspond to a distance from a center of an edgemost drop of intermediate layer disposed at the first opening and a center of an immediate adjacent drop of intermediate layer discharged at an inlet
- the first distance may be substantially equal to the second distance
- forming the pixel-defining layer may further include forming the first openings and the inlets in a same process step.
- the method may include forming a plurality of second openings in the pixel-defining layer for exposing at least a portion of a substrate; and forming the intermediate layer on the exposed portions of the first electrodes and the substrate, wherein the second openings may be selectively formed between adjacent sub-pixels emitting light of a same wavelength.
- the second openings may be omitted between adjacent sub-pixels emitting light of different wavelengths.
- a first distance may correspond to a distance from a center of a second opening to a center of a nearest adjacent first electrode
- a second distance may correspond to a distance from the center of the second opening to a center of another nearest adjacent first electrode
- the first distance may be substantially equal to the second distance
- forming the pixel-defining layer may further include forming the first openings and the second openings in a same process step.
- the method may further include forming the intermediate layer using an inkjet printing process.
- forming the intermediate layer may further include dispensing an ink, at a constant pitch, on the exposed portions of the first electrodes and a substrate, wherein the portion of the substrate is exposed through a plurality of second openings formed in the pixel-defining layer.
- FIGS. 1 and 2 illustrate cross-sectional views of an organic light-emitting display device in accordance with an embodiment of the inventive concept.
- FIGS. 4 and 5 illustrate cross-sectional views of an organic light-emitting display device in accordance with another embodiment of the inventive concept.
- FIG. 7 illustrates a cross-sectional view of an organic light-emitting display device in accordance with a further embodiment of the inventive concept.
- an x-axis, a y-axis, and a z-axis should not be construed as being limited to the axes in a rectangular coordinate system. Instead, the axes may be defined broadly. For example, the x-axis, y-axis, and z-axis may be perpendicular to each other, or may be indicative of other directions that are non-perpendicular to each other.
- elements such as a layer, a film, a region, a plate, or other elements
- the elements may be disposed directly on the other element, or disposed on the other element with one or more intervening elements being present.
- FIGS. 1 and 2 illustrate cross-sectional views of an organic light-emitting display device in accordance with an embodiment of the inventive concept.
- FIG. 3 illustrates a plan view of the display device of FIG. 1 .
- an organic light-emitting display device includes a plurality of first electrodes 10 and a pixel-defining layer 20 disposed on a substrate (not shown). Each first electrode 10 corresponds to a sub-pixel. The plurality of first electrodes 10 (corresponding to the sub-pixels) may constitute pixel electrodes.
- the pixel-defining layer 20 includes a plurality of first openings 20 a and second openings 20 b .
- the first openings 20 a expose at least a portion of the first electrodes 10 , including central portions of the first electrodes 10 .
- the second openings 20 b expose at least an upper surface of the substrate.
- the first electrodes 10 may be disposed on the substrate in different configurations. In some embodiments, the first electrodes 10 may be directly disposed on the substrate. In other embodiments, the first electrodes 10 may be disposed on the substrate with one or more intervening layers between the first electrodes 10 and the substrate. For example, in those other embodiments, a thin film transistor may be disposed on the substrate, a planarization layer may be disposed covering the thin film transistor, and the first electrodes 10 may be disposed on the planarization layer.
- the first electrodes 10 may include a transparent electrode or a reflective electrode.
- the transparent electrode may include a layer formed of ITO, IZO, ZnO, or In 2 O 3 .
- the reflective electrode may include a reflective layer formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a compound thereof.
- the reflective electrode may also include a layer formed of ITO, IZO, ZnO, or In 2 O 3 .
- an intermediate layer 30 is disposed on the first electrodes 10 (in the first openings 20 a ) and the exposed surface of the substrate (in the second openings 20 b ).
- the first distance d 1 and the second distance d 2 are the same, so as to produce a same pitch for the sub-pixels in the x-axis direction.
- the ink may be dispensed onto the substrate at a constant pitch.
- the ink may also be dispensed from the inkjet head in a particular direction (e.g. the x-axis direction).
- the intermediate layer 30 is formed having a constant pitch, and is disposed between adjacent sub-pixels emitting light of a same wavelength.
- an inorganic material may be disposed between the intermediate layer 30 and the first electrodes 10 .
- an inorganic material may be disposed between the intermediate layer 30 and the opposite electrode 40
- the pixel-defining layer 20 includes the plurality of first openings 20 a and second openings 20 b , as previously mentioned.
- the first openings 20 a expose central portions of the first electrodes 10
- the second openings 20 b are disposed between the first openings 20 a .
- Each first electrode 10 corresponds to a sub-pixel, and sub-pixels disposed along a same row in the x-axis direction may emit light of a same wavelength.
- the second openings 20 b may be selectively disposed between adjacent sub-pixels emitting light of the same wavelength.
- the second openings 20 b are selectively disposed between adjacent sub-pixels in the x-axis direction, and are not disposed between adjacent sub-pixels in the y-axis direction.
- FIGS. 4 and 5 illustrate cross-sectional views of an organic light-emitting display device in accordance with another embodiment of the inventive concept.
- FIG. 6 illustrates a plan view of the display device of FIG. 4 with drops of ink (represented by the shaded circles).
- the display device of FIGS. 4 to 6 includes elements similar to those described previously in FIGS. 1 to 3 , and thus detailed description of those elements shall be omitted.
- an organic light-emitting display device includes a plurality of first electrodes 10 and a pixel-defining layer 20 disposed on a substrate (not shown). Each first electrode 10 corresponds to a sub-pixel. The plurality of first electrodes 10 (corresponding to the sub-pixels) may constitute pixel electrodes.
- the pixel-defining layer 20 includes a plurality of first openings 20 a and inlets 20 b ′. The first openings 20 a expose at least a portion of the first electrodes 10 , including central portions of the first electrodes 10 . The inlets 20 b ′ are disposed between adjacent first openings 20 a.
- the inlets 20 b ′ are formed as cavities (having a depth h 1 ) in an upper surface of the pixel-defining layer 20 .
- a thickness of the pixel-defining layer 20 is defined by a depth h 2 .
- the inlets 20 b ′ may be selectively disposed between adjacent sub-pixels emitting light of a same wavelength, and may not be disposed between adjacent sub-pixels emitting light of different wavelengths, as described in further detail below.
- the drops of ink may correspond to drops of an intermediate layer 30 dispensed at the first openings 20 a and at the inlets 20 b ′.
- the drops of ink may correspond to drops of another material that is dispensed on the intermediate layer 30 of FIG. 5 .
- a first distance p 1 is defined as a distance between the centers of two adjacent drops of ink discharged at a first opening 20 a .
- a second distance p 2 is defined as a distance between the center of an edgemost drop of ink discharged at the first opening 20 a and the center of an immediate adjacent drop of ink discharged at an inlet 20 b ′.
- the distance p 1 may be equal to the distance p 2 .
- Sub-pixels disposed horizontally along a same row in the x-direction may emit light of a same wavelength. Accordingly, the inlets 20 b ′ may be disposed at a central portion between adjacent sub-pixels emitting light of the same wavelength.
- the intermediate layer 30 is disposed on the first electrodes 10 (in the first openings 20 a ) and in the inlets 20 b ′.
- the first distance p 1 and the second distance p 2 are the same, so as to produce a same pitch for the sub-pixels in the x-axis direction.
- the ink may be dispensed onto the substrate at a constant pitch.
- the ink may also be dispensed from the inkjet head in a particular direction (e.g. the x-axis direction).
- the intermediate layer 30 is formed having a constant pitch, and is disposed between adjacent sub-pixels emitting light of the same wavelength.
- a distance between adjacent first electrodes 10 may need to be reduced. Since the inlets 20 b ′ are disposed in the space between adjacent first electrodes 10 , the reduced distance (between adjacent first electrodes 10 ) may lead to process challenges when forming the inlets 20 b ′. For example, formation of the inlets 20 b ′ may be rendered more difficult when the distance between adjacent first electrodes 10 has been reduced and the depth h 1 of the inlets 20 b ′ is more than 1 ⁇ 2 of the thickness h 2 of the pixel-defining layer 20 . Accordingly, in some embodiments, the depth h 1 may preferably be less than about 1 ⁇ 2 of the thickness h 2 .
- the inlets 20 b ′ may be too shallow.
- the ink for forming an intermediate layer 30
- the ink may overflow from the inlets 20 b ′.
- the depth h 1 of the inlet 20 b ′ may preferably range from about 1 ⁇ 4 to about 1 ⁇ 2 of the thickness h 2 of the pixel-defining layer 20 .
- an opposite electrode 40 is disposed on the intermediate layer 30 and the pixel-defining layer 20 .
- the opposite electrode 40 may be disposed conformally over the structure of FIG. 4 .
- the opposite electrode 40 may be selectively disposed in the vicinity of the first electrodes 10 .
- the opposite electrode 40 may be disposed over the entire substrate.
- the pixel-defining layer 20 includes the plurality of first openings 20 a and inlets 20 b ′, as previously mentioned.
- the first openings 20 a expose central portions of the first electrodes 10
- the inlets 20 b ′ are disposed between the first openings 20 a .
- Each first electrode 10 corresponds to a sub-pixel, and sub-pixels disposed along a same row in the x-axis direction may emit light of a same wavelength.
- the inlets 20 b ′ may be selectively disposed between adjacent sub-pixels emitting light of the same wavelength.
- the inlets 20 b ′ are selectively disposed between adjacent sub-pixels in the x-axis direction. Similar to the embodiment of FIG. 3 , the inlets 20 b ′ in FIG. 6 are not disposed between adjacent sub-pixels in the y-axis direction (not shown).
- the inlets 20 b ′ are disposed between adjacent sub-pixels emitting light of the same wavelength.
- the first distance p 1 and the second distance p 2 are the same, so as to produce a same pitch for the sub-pixels in the x-direction.
- the ink may be dispensed onto the substrate at a same pitch (corresponding to the pitch of the sub-pixels), so as to form the intermediate layer 30 having a constant pitch.
- the ink may also be dispensed from the inkjet head in a single direction (e.g. along the x-axis direction).
- Each first electrode 10 corresponds to a sub-pixel.
- the pixel-defining layer 20 includes a plurality of first openings 20 a and second openings 20 b formed in the pixel-defining layer 20 .
- the first openings 20 a expose at least a portion of the first electrodes 10 , including central portions of the first electrodes 10 .
- the second openings 20 b expose at least an upper surface of the substrate.
- the second openings 20 b may be selectively formed between adjacent sub-pixels emitting light of the same wavelength in the x-axis direction, and may not be formed between adjacent sub-pixels emitting light of different wavelengths in the y-axis direction.
- an intermediate layer 30 is formed on the first electrodes 10 (in the first openings 20 a ) and the exposed surface of the substrate (in the second openings 20 b ).
- the intermediate layer 30 may be formed using an inkjet printing process, by dispensing ink (for forming the intermediate layer 30 ) onto the first electrodes 10 and into the second openings 20 b .
- the intermediate layer 30 may be formed as island-shaped pixels on the display device.
- the first distance d 1 and the second distance d 2 are the same, so as to produce a same pitch for the sub-pixels.
- the ink may be dispensed onto the substrate at a same pitch in a single direction. Accordingly, the intermediate layer 30 is formed having a constant pitch, and is disposed between adjacent sub-pixels emitting light of the same wavelength.
- the pixel-defining layer 20 includes a plurality of first openings 20 a and inlets 20 b ′ formed in the pixel-defining layer 20 .
- the first openings 20 a expose at least a portion of the first electrodes 10 , including central portions of the first electrodes 10 .
- the inlets 20 b ′ are formed between adjacent first openings 20 a .
- the inlets 20 b ′ are formed as cavities (having a depth h 1 ) in an upper surface of the pixel-defining layer 20 .
- the pixel-defining layer 20 may be formed having a thickness defined by a depth h 2 .
- the inlets 20 b ′ may be formed having a depth h 1 ranging from about 1 ⁇ 4 to about 1 ⁇ 2 of the thickness h 2 of the pixel-defining layer 20 .
- the inlets 20 b ′ and the first openings 20 a may be formed simultaneously during patterning of the pixel-defining layer 20 .
- the inlets 20 b ′ and the first openings 20 a may be formed using a half-tone mask or a slit mask.
- the inlets 20 b ′ and the first openings 20 a may be formed sequentially using more than one process step.
- the inlets 20 b ′ may be selectively formed between adjacent sub-pixels emitting light of the same wavelength in the x-axis, and may not be formed between adjacent sub-pixels emitting light of different wavelengths.
- an intermediate layer 30 is formed on the first electrodes 10 (in the first openings 20 a ) and in the inlets 20 b ′.
- the intermediate layer 30 may be formed using an inkjet printing process, by dispensing ink (for forming the intermediate layer 30 ) onto the first electrodes 10 and into the inlets 20 b ′.
- the intermediate layer 30 may be formed as island-shaped pixels on the display device.
- the first distance p 1 and the second distance p 2 are the same, so as to produce a same pitch for the sub-pixels.
- the ink may be dispensed onto the substrate at a same pitch in a single direction. Accordingly, the intermediate layer 30 is formed having a constant pitch, and is disposed between adjacent sub-pixels emitting light of the same wavelength.
- an opposite electrode 40 is formed on the intermediate layer 30 and the pixel-defining layer 20 . As shown in FIG. 5 , the opposite electrode 40 is formed conformally over the structure of FIG. 4 .
- FIG. 7 illustrates a cross-sectional view of an organic light-emitting display device in accordance with a further embodiment of the inventive concept.
- a buffer layer 102 is disposed on the substrate 100 .
- a semiconductor layer 103 is disposed on a portion of the buffer layer 102 .
- a gate insulating layer 104 is disposed on the buffer layer 102 and the semiconductor layer 103 .
- a gate electrode 105 is disposed on the gate insulating layer 104 directly above the semiconductor layer 103 .
- An intermediate insulating layer 108 is disposed on the gate insulating layer 104 and the gate electrode 105 .
- a source electrode 106 and a drain electrode 107 are formed by etching vias in the gate insulating layer 104 and intermediate insulating layer 108 (so as to expose portions of the semiconductor layer 103 ), and filling the vias with conductive material.
- the buffer layer 102 may be formed as a single layer or a multi-layer structure.
- the buffer layer 102 may include silicon nitride or silicon oxide.
- the gate electrode 105 , source electrode 106 , and drain electrode 107 may include least one of the following metals: aluminium (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), or copper (Cu).
- Each of the gate electrode 105 , source electrode 106 , and drain electrode 107 may be formed as a single layer or a multi-layer structure.
- the planarization layer 112 may be formed over the entire surface of the substrate 100 .
- the planarization layer 112 may be formed of an inorganic insulating material.
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US (1) | US9419223B2 (ko) |
JP (1) | JP2015011985A (ko) |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180197927A1 (en) * | 2015-06-12 | 2018-07-12 | Merck Patent Gmbh | Organic electronic devices with fluoropolymer bank structures |
US11456342B2 (en) * | 2019-11-08 | 2022-09-27 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Organic light emitting diode back plate and method of manufacturing same |
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WO2021071630A1 (en) * | 2019-10-10 | 2021-04-15 | Applied Materials, Inc. | Methods and apparatus for organic light emitting diode display structures |
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WO2022163123A1 (ja) * | 2021-02-01 | 2022-08-04 | 株式会社ジャパンディスプレイ | 表示装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030011304A1 (en) * | 2001-04-26 | 2003-01-16 | Duineveld Paulus Cornelis | Electroluminescent device and method for manufacturing thereof |
US20030201708A1 (en) * | 1999-10-28 | 2003-10-30 | Jiro Yamada | Display apparatus and method for fabricating the same |
JP2004111166A (ja) | 2002-09-18 | 2004-04-08 | Hitachi Ltd | 有機el素子用バンク付き基板 |
KR20050041836A (ko) | 2003-10-30 | 2005-05-04 | 삼성에스디아이 주식회사 | 평판 표시 장치 및 이의 제조 방법 |
US20050093441A1 (en) | 2003-10-30 | 2005-05-05 | Albrecht Uhlig | Flat display device and method of manufacturing the same |
US20070076061A1 (en) * | 2005-09-28 | 2007-04-05 | Brother Kogyo Kabushiki Kaisha | Piezoelectric actuator, method of manufacturing the same, and inkjet recording head |
KR20070050722A (ko) | 2005-11-12 | 2007-05-16 | 삼성에스디아이 주식회사 | 유기 발광 디스플레이 장치 |
US20120169217A1 (en) | 2011-01-03 | 2012-07-05 | Samsung Mobile Display Co., Ltd. | Organic light-emitting display device and method of manufacturing the same |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3628997B2 (ja) * | 2000-11-27 | 2005-03-16 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置の製造方法 |
JP3823916B2 (ja) * | 2001-12-18 | 2006-09-20 | セイコーエプソン株式会社 | 表示装置及び電子機器並びに表示装置の製造方法 |
KR101253060B1 (ko) * | 2006-06-22 | 2013-04-10 | 삼성디스플레이 주식회사 | 컬러필터 기판의 제조 방법 |
GB0618698D0 (en) * | 2006-09-22 | 2006-11-01 | Cambridge Display Tech Ltd | Molecular electronic device fabrication methods and structures |
JP2012047764A (ja) * | 2008-12-26 | 2012-03-08 | Sharp Corp | 表示装置用基板及びその製造方法並びに表示装置 |
KR101729789B1 (ko) * | 2010-06-30 | 2017-04-24 | 가부시키가이샤 제이올레드 | 유기 el 표시 패널과 그 제조 방법 |
JP5835770B2 (ja) * | 2011-10-13 | 2015-12-24 | 株式会社Joled | 表示パネルの製造方法および表示パネル |
-
2013
- 2013-07-01 KR KR1020130076603A patent/KR102105077B1/ko active IP Right Grant
- 2013-12-04 US US14/096,995 patent/US9419223B2/en active Active
-
2014
- 2014-04-09 CN CN201410140490.5A patent/CN104282712A/zh active Pending
- 2014-04-10 JP JP2014080897A patent/JP2015011985A/ja active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030201708A1 (en) * | 1999-10-28 | 2003-10-30 | Jiro Yamada | Display apparatus and method for fabricating the same |
US20030011304A1 (en) * | 2001-04-26 | 2003-01-16 | Duineveld Paulus Cornelis | Electroluminescent device and method for manufacturing thereof |
JP2004111166A (ja) | 2002-09-18 | 2004-04-08 | Hitachi Ltd | 有機el素子用バンク付き基板 |
KR20050041836A (ko) | 2003-10-30 | 2005-05-04 | 삼성에스디아이 주식회사 | 평판 표시 장치 및 이의 제조 방법 |
US20050093441A1 (en) | 2003-10-30 | 2005-05-05 | Albrecht Uhlig | Flat display device and method of manufacturing the same |
US20070076061A1 (en) * | 2005-09-28 | 2007-04-05 | Brother Kogyo Kabushiki Kaisha | Piezoelectric actuator, method of manufacturing the same, and inkjet recording head |
KR20070050722A (ko) | 2005-11-12 | 2007-05-16 | 삼성에스디아이 주식회사 | 유기 발광 디스플레이 장치 |
US20120169217A1 (en) | 2011-01-03 | 2012-07-05 | Samsung Mobile Display Co., Ltd. | Organic light-emitting display device and method of manufacturing the same |
KR20120078954A (ko) | 2011-01-03 | 2012-07-11 | 삼성모바일디스플레이주식회사 | 유기전계발광표시장치 및 그 제조방법 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180197927A1 (en) * | 2015-06-12 | 2018-07-12 | Merck Patent Gmbh | Organic electronic devices with fluoropolymer bank structures |
US11456342B2 (en) * | 2019-11-08 | 2022-09-27 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Organic light emitting diode back plate and method of manufacturing same |
Also Published As
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US20150001485A1 (en) | 2015-01-01 |
KR20150003567A (ko) | 2015-01-09 |
CN104282712A (zh) | 2015-01-14 |
KR102105077B1 (ko) | 2020-06-01 |
JP2015011985A (ja) | 2015-01-19 |
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