US9391105B2 - Solid-state imaging device and imaging apparatus - Google Patents

Solid-state imaging device and imaging apparatus Download PDF

Info

Publication number
US9391105B2
US9391105B2 US14/140,365 US201314140365A US9391105B2 US 9391105 B2 US9391105 B2 US 9391105B2 US 201314140365 A US201314140365 A US 201314140365A US 9391105 B2 US9391105 B2 US 9391105B2
Authority
US
United States
Prior art keywords
light
axis
unit pixel
center
transmissive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active, expires
Application number
US14/140,365
Other languages
English (en)
Other versions
US20140103478A1 (en
Inventor
Manabu USUDA
Shigeru Saitou
Keisuke Tanaka
Kazutoshi Onozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Assigned to PANASONIC CORPORATION reassignment PANASONIC CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: TANAKA, KEISUKE, ONOZAWA, KAZUTOSHI, SAITOU, SHIGERU, USUDA, MANABU
Publication of US20140103478A1 publication Critical patent/US20140103478A1/en
Assigned to PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. reassignment PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: PANASONIC CORPORATION
Application granted granted Critical
Publication of US9391105B2 publication Critical patent/US9391105B2/en
Assigned to PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. reassignment PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. CORRECTIVE ASSIGNMENT TO CORRECT THE ERRONEOUSLY FILED APPLICATION NUMBERS 13/384239, 13/498734, 14/116681 AND 14/301144 PREVIOUSLY RECORDED ON REEL 034194 FRAME 0143. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Assignors: PANASONIC CORPORATION
Active legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/61—Noise processing, e.g. detecting, correcting, reducing or removing noise the noise originating only from the lens unit, e.g. flare, shading, vignetting or "cos4"
    • H04N5/3572—

Definitions

  • an imaging region includes a plurality of semiconductor integrated circuits (unit pixels) having light-receiving elements arranged in a two-dimensional array, and converts a light signal from an object into an electric signal.
  • the sensitivity of the solid-state imaging device is defined based on an amount of output current of a light-receiving element to an amount of incident light. Therefore, leading the incident light surely into the light-receiving element is an important factor for improving the sensitivity.
  • the solid-state imaging device includes a plurality of unit pixels arranged in two-dimensional array as described above, the incident angle of light entering the unit pixels leans as the unit pixel is farther from the middle portion (center portion) toward the peripheral portion of the imaging region. As a result, a problem is caused that the light-collection efficiency of the unit pixels in the peripheral portion decreases as compared with that of the unit pixels at the middle portion. For example, when the light is received by the unit pixel 300 of the conventional technique shown in FIG. 10 , the incident angle of the light entering the unit pixel 300 is smaller at the middle portion of the imaging region (as the incident light 356 indicated by dashed lines), whereby almost all of the light is collected by the light-receiving element 306 and become effective light.
  • the Al wire 303 and the light-receiving element 306 are shifted (shrank) in an outward direction (toward the edge) in the imaging region of the unit pixel 300 in the peripheral portion of the imaging region, in an attempt to improve the light-collection efficiency of the incident light 357 having a great incident angle.
  • the gradient index lens having the effective refractive index distribution asymmetrical to the center of the unit pixel is formed with a combination of a plurality of zones which is in a concentric structure and divided into line width approximately the same or shorter than a wavelength of incident light, and the center of the concentric structure is shifted (offset) from the center of the unit pixel.
  • the incident light can be collected at the light-receiving element and the sensitivity in the peripheral portion of the solid-state imaging element can be equivalent to that obtained at the middle portion.
  • the incident angle of the principal light ray from the optical lens of the camera is constant, the sensitivity can be prevented from being decreased.
  • the incident angle of the light from the optical lens is changed due to lens change for example, the light deviates from the light-receiving element in some cases.
  • the shrinkage amount of the wire and the light-receiving element or (ii) the offset amount at the center of the light-transmissive film in the concentric structure is designed to support the light of small incident angle incident when a telephoto lens is attached
  • the sensitivity is lowered since the light with a large incident angle enters from the optical lens and part of the incident light deviates from the light-receiving element.
  • FIG. 2 shows a detailed configuration of a solid-state imaging apparatus according to Embodiment 1.
  • FIG. 4A shows an outline of light collection performed by the light-collecting elements on light entering different portions on the imaging surface, when a wide-angle lens is attached as a lens for a single-lens reflex camera provided with the solid-state imaging device according to Embodiment 1.
  • FIG. 7 shows incident angle dependency of light-receiving sensitivity of the light-receiving elements in the solid-state imaging device according to Embodiment 1.
  • FIG. 1 shows a schematic configuration of an imaging apparatus (camera) according to Embodiment 1.
  • FIG. 2 shows a detailed configuration of a solid-state imaging apparatus 100 according to the present embodiment.
  • the DSP 120 includes: an image processing circuit 121 which generates a video signal by performing processing such as noise removal on the output signal of the solid-state imaging apparatus 100 ; and a camera system control unit 122 which controls scanning timing and gain of the unit pixels (unit cells) 3 in the solid-state imaging apparatus 100 .
  • the DSP 120 corrects differences in features between the pixels (photoelectric conversion elements) shared in the unit pixels 3 in the solid-state imaging apparatus 100 , for example.
  • the communication-and-timing control unit 30 receives master clock CLK0 and DATA input via an external terminal, generates various internal clock based on the received CLK0 and DATA, and controls the reference signal generation unit 27 and the vertical scanning circuit 24 .
  • the AD conversion circuit 25 includes a plurality of column AD circuits 26 each provided for a column of the unit pixels 3 .
  • the column AD circuit 26 converts the analog voltage signal of the signal holding capacitor 262 output from the unit pixels 3 into a digital signal, using the reference voltage RAMP generated by the DAC 27 a.
  • the column AD circuit 26 extracts only the true signal level Vsig by down counting the noise level and up counting the signal level.
  • the signal digitized by the column AD circuit 26 is input to the output I/F 28 via the horizontal signal line 18 .
  • the AD conversion circuit 25 may be provided outside the solid-state imaging device 100 .
  • the pixel unit 10 sequentially outputs the voltage signal from each row of the unit pixels 3 . Furthermore, a frame image that is an image of one sheet for the pixel unit 10 is shown by a group of voltage signals of the entire pixel unit 10 .
  • FIG. 3A and FIG. 3B each shows an example of a basic structure of the unit pixel 3 in the pixel unit 10 as the solid-state imaging device according to Embodiment 1.
  • FIG. 3A and FIG. 3B show the structure and FIG. 3C shows effective refractive index distribution, of the unit pixels 3 in different portions in a horizontal direction (row direction) on the imaging surface (light-receiving surface) of the solid-state imaging device.
  • the structure and effective refractive index distribution of the unit pixels 3 in the middle portion (center portion) of the pixel unit 10 are shown in the left side
  • those in the intermediate portion of the middle portion and the peripheral portion of the pixel unit 10 are shown in the center
  • (iii) those in the peripheral portion of the pixel unit 10 are shown in the right side, of FIG. 3A to FIG. 3C .
  • FIG. 3A to FIG. 3C shows the structure and FIG. 3C shows effective refractive index distribution, of the unit pixels 3 in different portions in a horizontal direction (row direction) on the imaging surface (light-receiving surface) of the solid-state imaging device.
  • FIG. 3A and FIG. 3B show the structure and effective refractive index distribution of the unit pixels 3 in
  • FIG. 3A shows a sectional view of the unit pixels 3
  • FIG. 3B shows a top view (view on imaging surface) of the unit pixels 3 (light-collecting elements 11 )
  • FIG. 3C shows the effective refractive index distribution of the light-collecting elements 11 .
  • the unit pixels 3 each includes the light-collecting element 11 that is the distribution gradient index lens, the color filter 12 , the wire 13 such as Al wire, the light-receiving element 14 such as a Si photodiode etc., and the semiconductor substrate 15 . Furthermore, the film thickness of the light-collecting element 11 is 1.2 [ ⁇ m], for example. As shown in FIG. 3B , the size of each of the plurality of unit pixels 3 (area in light-receiving surface) is equal which can be 3.75 [ ⁇ m] ⁇ 3.75 [ ⁇ m], for example.
  • each of the unit pixels 3 in the middle portion, intermediate portion, and peripheral portion of the pixel unit 10 has the same size, constituent elements, and position, only the structures of the light-collecting elements 11 are different.
  • the center of the plurality of ring-shaped light-transmissive films 33 matches the center of the true-circle-shaped light-transmissive film 33 at the center.
  • the center of the true-circle-shaped light-transmissive film 33 is the center of the concentric structure.
  • the difference in the radius of inner circles of neighboring light-transmissive films 33 increases as the distance of the light-transmissive films 33 from the center of the concentric structure increases, and the difference varies in a range from approximately 100 [ ⁇ m] to approximately 200 [ ⁇ m].
  • a region obtained by dividing the light-collecting element 11 on the light-receiving surface into donut shapes having a width of a line width (the difference in the radius of inner circles) 35 is referred to as a zone.
  • the line width of the light-transmissive film 33 on the light-receiving surface is the greatest at the center of the concentric structure, and decreases as the ring-shaped light-transmissive film 33 is farther from the center of the concentric structure.
  • the solid-state imaging device shown in FIG. 3A to FIG. 3C has a feature that the effective refractive index distribution can be controlled freely by simply changing the line width of the light-transmissive film 33 , that is, the volume ratio of the light-transmissive film and the air.
  • the position of the center of the concentric structure (position of an intersection point of the dashed lines in FIG. 3B ) is offset as it is closer to the peripheral portion from the middle portion of the pixel unit 10 . Accordingly, (i) the center of the concentric structure in the unit pixel 3 in the center portion of the pixel unit 10 matches the center of the unit pixel 3 on the light-receiving surface, and (ii) the center of the concentric structure in the unit pixel 3 far from the center portion of the pixel unit 10 is shifted from the center of the unit pixel 3 toward the center of the pixel unit 10 on the light-receiving surface, and the shift amount is greater in the unit pixel 3 farther away from the center portion of the pixel unit 10 .
  • the region (number) of the ovals of the light-transmissive film 33 included in a single unit pixel 3 increases in the edge-side of the array (peripheral-portion side of the pixel unit 10 ) of the light-transmissive film 33 in the unit pixel 3 , as it is farther from the middle portion toward the peripheral portion. Therefore, even when the incident angle of the light from the camera lens is great in the peripheral portion of the pixel unit 10 , such as when the wide-angle lens is attached, the light can be lead to the light-receiving element 14 by the oval region.
  • the oval region of the light-transmissive film 33 increases only in the edge-side of the array of the light-transmissive film 33 in the unit pixel 3 on the light-receiving surface, even when the incident angle of the light from the camera lens is small, such as when the telephoto lens is attached, the light can be received without being lost since the light is collected in the region having a structure close to the true circle at the middle side of the array (middle-portion side of the pixel unit 10 ) of the light-transmissive film 33 in the unit pixel 3 .
  • the solid line in FIG. 3C shows the effective refractive index distribution of the solid-state imaging device according to the present embodiment, and the effective refractive index distribution is represented by Equation (1) below.
  • ⁇ n ( x,y ) ⁇ n max [( A ( x 2 +y 2 )+ Bx sin ⁇ /2 ⁇ +C]+G ( x ) (1)
  • ⁇ is a lens design angle (optimal lens design angle for light entering at an angle ⁇ ), and is different from the incident angle of the actual light (the light actually entering the lens includes light having an incident angle other than the angle ⁇ ).
  • ⁇ n max represents the difference in the refractive index between the light-transmissive film 33 and the air, and an example of the refractive index difference between the SiO 2 as the light-transmissive film 33 and the air is 0.45.
  • Constants A and B can be represented by Equations (1-1) to (1-3) below, when (i) the refractive index of the medium of the side, from which the light is incident, of the side of the light-collecting element 11 , is represented as n 0 , (ii) the refractive index of the medium of the side, into which the light is output, of the light-collecting element 11 is represented as n 1 , (iii) the focal length is represented as f, and (iv) the wavelength of the light entering the light-collecting element 11 is represented as ⁇ .
  • A ⁇ ( k 0 n 1 )/2 f (1-1)
  • B ⁇ k 0 n 0 (1-2)
  • K 0 2 ⁇ / ⁇ (1-3)
  • the light-collecting element 11 can be optimized depending on (i) an intended focal length and (ii) an incident angle and a wavelength of the targeted incident light.
  • the light collecting component is represented by a quadratic function of the distance x from the center of the unit pixel 3
  • the deflection component is represented by the product of the distance x and the trigonometric function.
  • Equation (1) is a quartic function of x represented by Equation (1-4) below, and contributes to the change in the shape of the light-transmissive film 33 continuously from a true circle to an oval as it is farther from the center of the concentric structure of the light-transmissive film 33 .
  • the effective refractive index distribution on the light-receiving surface of the light-collecting element 11 has an effective refractive index which peaks at the center of the concentric structure and decreases according to a distance from the center of the concentric structure in a parabolic manner, and the effective refractive index distribution in a short-axis direction of the oval on the light-receiving surface of the light-collecting element 11 has a skewed distribution in which the effective refractive index decreases with the fourth power of the distance from the center of the concentric structure.
  • G ( x ) ⁇ D ( x ⁇ x 0 ) 4 (1-4)
  • x 0 represents an x-coordinate component at the center of the concentric structure.
  • a y-coordinate component at the center of the concentric structure is 0.
  • FIG. 4A and FIG. 4B show schematic views showing how to collect incident light, when a wide-angle lens or a telephoto lens is used, respectively, as the lens 110 for a single-lens reflex camera equipped with the solid-state imaging device according to the present embodiment.
  • FIG. 4A and FIG. 4B show the sectional view of the unit pixels 3 in different portions in a horizontal direction (row direction) on the imaging surface (light-receiving surface) of the solid-state imaging device. Specifically, (i) the middle portion of the pixel unit 10 is shown in the left side, (ii) the intermediate portion between the middle portion and the peripheral portion of the pixel unit 10 is shown in the center, and (iii) the peripheral portion of the pixel unit 10 is shown in the right side, of FIG. 4A and FIG. 4B . Furthermore, FIG. 4A shows how to collect the incident light 16 when the wide-angle lens is attached, and FIG. 4B shows how to collect the incident light 17 when the telephoto lens is attached.
  • the incident light 16 having a large angle enters the unit pixel 3 positioned at the peripheral portion in the pixel unit 10 .
  • the incident light 16 having a large angle connects the focal point at an edge-side position in the unit pixel 10 on the light-receiving element 14 and is collected.
  • the incident light 17 having a small angle enters the unit pixel 3 positioned at the peripheral portion in the pixel unit 10 .
  • the light-collecting element 11 has the great effective refractive index distribution only in the edge-side of the array in the unit pixel 3 . Therefore, even when the incident light 17 having a small angle enters, the incident light 17 is prevented from being bent too much, connects the focal point at a middle-portion side position of the unit pixel 10 on the light-receiving element 14 , and is collected.
  • FIG. 5 shows a top view of the light-collecting element 11 of each unit pixel 3 arranged on the imaging surface of the solid-state imaging device according to the present embodiment.
  • FIG. 6 shows a top view of the light-collecting element 11 of the unit pixel 3 in the region at corners of the image (D-edges) which are four corners in FIG. 5 .
  • This structure can be realized by rotating the long-axis direction of the oval according to a ratio of the number of pixels in the vertical direction and the number of pixels in the horizontal direction (also referred to as aspect ratio) of the solid-state imaging device.
  • a ratio of the number of pixels in the vertical direction and the number of pixels in the horizontal direction also referred to as aspect ratio
  • the ratio of the number of pixels in the vertical direction and the number of pixels in the horizontal direction is 1:1, and the long-axis direction is rotated by 45 degrees.
  • FIG. 7 shows a graph showing the incident angle dependency of the light-receiving sensitivity of the light-receiving element 14 (normalized sensitivity of the light-receiving element 14 ) in the solid-state imaging device according to the present embodiment.
  • the light having a small incident angle entering when the telephoto lens is attached is not bent greatly, since the oval region is limited to the periphery of the edge portion of the unit pixel.
  • the decrease of sensitivity can be suppressed even when the incident angle of the light entering the unit pixel is changed due to lens change or the like.
  • a solid-state imaging device is different from the solid-state imaging device according to Embodiment 1 in that: the light-collecting element 11 forms an inner-layer lens; and the light-collecting element 11 which is a combination of a plurality of light-transmissive films in a concentric structure is placed as the inner-layer lens. Furthermore, it is also different from Embodiment 1 in that the microlens is provided at an upper layer of the color filter 12 .
  • FIG. 9 shows a graph showing the incident angle dependency of the light-receiving sensitivity of the light-receiving element 14 (normalized sensitivity of the light-receiving element 14 ) in the solid-state imaging device according to the present embodiment.
  • the present disclosure can be used for solid-state imaging devices, and particularly for digital still cameras, digital video cameras, and mobile phones with cameras, and is commercially useful.
US14/140,365 2011-07-08 2013-12-24 Solid-state imaging device and imaging apparatus Active 2032-07-04 US9391105B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011-152279 2011-07-08
JP2011152279 2011-07-08
PCT/JP2012/004131 WO2013008395A1 (ja) 2011-07-08 2012-06-26 固体撮像素子および撮像装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2012/004131 Continuation WO2013008395A1 (ja) 2011-07-08 2012-06-26 固体撮像素子および撮像装置

Publications (2)

Publication Number Publication Date
US20140103478A1 US20140103478A1 (en) 2014-04-17
US9391105B2 true US9391105B2 (en) 2016-07-12

Family

ID=47505706

Family Applications (1)

Application Number Title Priority Date Filing Date
US14/140,365 Active 2032-07-04 US9391105B2 (en) 2011-07-08 2013-12-24 Solid-state imaging device and imaging apparatus

Country Status (4)

Country Link
US (1) US9391105B2 (ja)
JP (1) JP5950126B2 (ja)
CN (1) CN103620782B (ja)
WO (1) WO2013008395A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015129168A1 (ja) * 2014-02-28 2015-09-03 パナソニックＩｐマネジメント株式会社 固体撮像素子及びその製造方法
WO2016088645A1 (ja) * 2014-12-04 2016-06-09 Jsr株式会社 固体撮像装置
US9690014B2 (en) * 2015-01-22 2017-06-27 INVIS Technologies Corporation Gradient index lens and method for its fabrication
US20180306661A1 (en) 2015-10-27 2018-10-25 Haemonetics Corporation System and Method for Measuring Volume and Pressure
JP6653482B2 (ja) * 2017-04-06 2020-02-26 パナソニックＩｐマネジメント株式会社 撮像装置、およびそれに用いられる固体撮像装置
KR20210059290A (ko) * 2019-11-15 2021-05-25 에스케이하이닉스 주식회사 이미지 센싱 장치
EP3968059A1 (en) * 2020-09-11 2022-03-16 Samsung Electronics Co., Ltd. Meta lens assembly and electronic device including the same
KR20220096967A (ko) * 2020-12-31 2022-07-07 삼성전자주식회사 평면 나노 광학 마이크로렌즈 어레이를 구비하는 이미지 센서 및 이를 포함하는 전자 장치

Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01213079A (ja) 1988-02-22 1989-08-25 Sony Corp 固体撮像装置およびビデオカメラ
JPH1084104A (ja) 1996-06-14 1998-03-31 Eastman Kodak Co イメージセンサ
US6831687B1 (en) * 1999-07-21 2004-12-14 Nikon Corporation Digital camera and image signal processing apparatus
US20060066743A1 (en) * 2004-09-29 2006-03-30 Kazutoshi Onozawa Solid-state imaging device
US20060285228A1 (en) * 2005-06-17 2006-12-21 Matsushita Electric Industrial Co., Ltd. Manufacturing method of light-collecting device, light-collecting device and phase shift mask
US20060284052A1 (en) * 2005-06-17 2006-12-21 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device, solid-state imaging apparatus and manufacturing method thereof
US20070164329A1 (en) * 2003-12-18 2007-07-19 Matsushita Electric Industrial Co., Ltd. Light-collecting device and solid-state imaging apparatus
US20080011937A1 (en) * 2006-06-30 2008-01-17 Matsushita Electric Industrial Co., Ltd. Solid-state imaging element and solid-state imaging device
US20080029701A1 (en) * 2006-07-25 2008-02-07 Matsushita Electric Industrial Co. Ltd. Night-vision imaging apparatus, control method of the same, and headlight module
US20080076039A1 (en) * 2006-09-26 2008-03-27 Matsushita Electric Industrial Co., Ltd. Phase shift mask and method for manufacturing light-collecting device
US20090141153A1 (en) * 2007-11-29 2009-06-04 Panasonic Corporation Solid-state imaging device
US7667286B2 (en) * 2004-09-01 2010-02-23 Panasonic Corporation Light-collecting device, solid-state imaging apparatus and method of manufacturing thereof
US8018508B2 (en) * 2004-04-13 2011-09-13 Panasonic Corporation Light-collecting device and solid-state imaging apparatus
US20110221022A1 (en) * 2007-06-04 2011-09-15 Sony Corporation Optical member, solid-state imaging device, and manufacturing method
US8054350B2 (en) * 2007-02-23 2011-11-08 Samsung Electronics Co., Ltd. Shade correction for lens in image sensor
JP2012094601A (ja) 2010-10-25 2012-05-17 Panasonic Corp 固体撮像装置及び撮像装置
JP2012109468A (ja) 2010-11-18 2012-06-07 Panasonic Corp 固体撮像装置
US8310622B2 (en) * 2007-12-31 2012-11-13 Samsung Display Co., Ltd. Optical plate, method of manufacturing the same and liquid crystal having the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6137535A (en) * 1996-11-04 2000-10-24 Eastman Kodak Company Compact digital camera with segmented fields of view
JP5637693B2 (ja) * 2009-02-24 2014-12-10 キヤノン株式会社 光電変換装置、及び撮像システム

Patent Citations (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01213079A (ja) 1988-02-22 1989-08-25 Sony Corp 固体撮像装置およびビデオカメラ
JPH1084104A (ja) 1996-06-14 1998-03-31 Eastman Kodak Co イメージセンサ
US5751492A (en) 1996-06-14 1998-05-12 Eastman Kodak Company Diffractive/Refractive lenslet array incorporating a second aspheric surface
US6831687B1 (en) * 1999-07-21 2004-12-14 Nikon Corporation Digital camera and image signal processing apparatus
US20070164329A1 (en) * 2003-12-18 2007-07-19 Matsushita Electric Industrial Co., Ltd. Light-collecting device and solid-state imaging apparatus
US8018508B2 (en) * 2004-04-13 2011-09-13 Panasonic Corporation Light-collecting device and solid-state imaging apparatus
US7667286B2 (en) * 2004-09-01 2010-02-23 Panasonic Corporation Light-collecting device, solid-state imaging apparatus and method of manufacturing thereof
US20060066743A1 (en) * 2004-09-29 2006-03-30 Kazutoshi Onozawa Solid-state imaging device
US20090020840A1 (en) 2005-06-17 2009-01-22 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device, solid-state imaging apparatus and manufacturing method thereof
US20060285228A1 (en) * 2005-06-17 2006-12-21 Matsushita Electric Industrial Co., Ltd. Manufacturing method of light-collecting device, light-collecting device and phase shift mask
JP2006351972A (ja) 2005-06-17 2006-12-28 Matsushita Electric Ind Co Ltd 固体撮像素子、固体撮像装置およびその製造方法
US7663084B2 (en) 2005-06-17 2010-02-16 Panasonic Corporation Solid-state imager and solid-state imaging apparatus having a modulated effective refractive index distribution and manufacturing method thereof
US20060284052A1 (en) * 2005-06-17 2006-12-21 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device, solid-state imaging apparatus and manufacturing method thereof
US7692129B2 (en) 2005-06-17 2010-04-06 Panasonic Corporation Solid-state imaging device with light-collecting device having sub-wavelength periodic structure, solid-state imaging apparatus and manufacturing method thereof
US20080011937A1 (en) * 2006-06-30 2008-01-17 Matsushita Electric Industrial Co., Ltd. Solid-state imaging element and solid-state imaging device
US7718949B2 (en) * 2006-06-30 2010-05-18 Panasonic Corporation Solid-state imaging element and solid-state imaging device
US20080029701A1 (en) * 2006-07-25 2008-02-07 Matsushita Electric Industrial Co. Ltd. Night-vision imaging apparatus, control method of the same, and headlight module
US20080076039A1 (en) * 2006-09-26 2008-03-27 Matsushita Electric Industrial Co., Ltd. Phase shift mask and method for manufacturing light-collecting device
US8054350B2 (en) * 2007-02-23 2011-11-08 Samsung Electronics Co., Ltd. Shade correction for lens in image sensor
US20110221022A1 (en) * 2007-06-04 2011-09-15 Sony Corporation Optical member, solid-state imaging device, and manufacturing method
US8384009B2 (en) * 2007-06-04 2013-02-26 Sony Corporation Optical member with high refractive index layers, solid-state imaging device having an optical member with high refractive index layers, and manufacturing method thereof
US8004595B2 (en) * 2007-11-29 2011-08-23 Panasonic Corporation Solid-state imaging device with a two-dimensional array of unit pixels
JP2009135236A (ja) 2007-11-29 2009-06-18 Panasonic Corp 固体撮像素子
US20090141153A1 (en) * 2007-11-29 2009-06-04 Panasonic Corporation Solid-state imaging device
US8310622B2 (en) * 2007-12-31 2012-11-13 Samsung Display Co., Ltd. Optical plate, method of manufacturing the same and liquid crystal having the same
JP2012094601A (ja) 2010-10-25 2012-05-17 Panasonic Corp 固体撮像装置及び撮像装置
JP2012109468A (ja) 2010-11-18 2012-06-07 Panasonic Corp 固体撮像装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
International Search Report issued in PCT/JP2012/004131, dated Jul. 31, 2012.

Also Published As

Publication number Publication date
CN103620782B (zh) 2016-04-13
US20140103478A1 (en) 2014-04-17
CN103620782A (zh) 2014-03-05
WO2013008395A1 (ja) 2013-01-17
JP5950126B2 (ja) 2016-07-13
JPWO2013008395A1 (ja) 2015-02-23

Similar Documents

Publication Publication Date Title
US9391105B2 (en) Solid-state imaging device and imaging apparatus
US11935148B2 (en) Apparatus and method of acquiring image by employing color separation lens array
JP5283371B2 (ja) 固体撮像素子
JP6141024B2 (ja) 撮像装置および撮像システム
US8810698B2 (en) Two sided solid state image sensor and an image capture device
US11791368B2 (en) Image pickup element, image pickup apparatus, and method of manufacturing image pickup element
US7729055B2 (en) Method and apparatus providing concave microlenses for semiconductor imaging devices
KR101018175B1 (ko) 해상도 열화 개선용 픽셀 센서 어레이 및 이미지 센서
KR20210049670A (ko) 색분리 렌즈 어레이를 적용한 영상 획득 장치 및 방법
EP2669949B1 (en) Lens array for partitioned image sensor
TW202021141A (zh) 子畫素陣列以及影像感測器
US20230170358A1 (en) Imaging device
KR20210048987A (ko) 이미지 센서 및 이를 포함한 전자 장치
TW201444068A (zh) 固態影像感測裝置及固態影像感測裝置之製造方法
JP2016025334A (ja) 固体撮像装置およびカメラモジュール
US8872091B2 (en) Solid-state imaging device
US20120262611A1 (en) Method for calculating shift amount of image pickup element and image pickup element
JP2014011239A (ja) 固体撮像装置および固体撮像装置の製造方法
JP2012094601A (ja) 固体撮像装置及び撮像装置
US20210143200A1 (en) Image sensor
WO2010090133A1 (ja) 固体撮像装置
KR20210066705A (ko) 색분리 소자 및 이를 포함하는 이미지 센서
JP5983954B2 (ja) 固体撮像装置
JP2008103628A (ja) 固体撮像素子
JP2019110427A (ja) 撮像素子

Legal Events

Date Code Title Description
AS Assignment

Owner name: PANASONIC CORPORATION, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:USUDA, MANABU;SAITOU, SHIGERU;TANAKA, KEISUKE;AND OTHERS;SIGNING DATES FROM 20131122 TO 20131126;REEL/FRAME:032458/0254

AS Assignment

Owner name: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:PANASONIC CORPORATION;REEL/FRAME:034194/0143

Effective date: 20141110

Owner name: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LT

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:PANASONIC CORPORATION;REEL/FRAME:034194/0143

Effective date: 20141110

STCF Information on status: patent grant

Free format text: PATENTED CASE

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 4

AS Assignment

Owner name: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD., JAPAN

Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE ERRONEOUSLY FILED APPLICATION NUMBERS 13/384239, 13/498734, 14/116681 AND 14/301144 PREVIOUSLY RECORDED ON REEL 034194 FRAME 0143. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT;ASSIGNOR:PANASONIC CORPORATION;REEL/FRAME:056788/0362

Effective date: 20141110

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 8