US8951848B2 - Circuit substrate for mounting chip, method for manufacturing same and chip package having same - Google Patents
Circuit substrate for mounting chip, method for manufacturing same and chip package having same Download PDFInfo
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- US8951848B2 US8951848B2 US13/771,320 US201313771320A US8951848B2 US 8951848 B2 US8951848 B2 US 8951848B2 US 201313771320 A US201313771320 A US 201313771320A US 8951848 B2 US8951848 B2 US 8951848B2
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- conductive pads
- circuit board
- electrically conductive
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/111—Pads for surface mounting, e.g. lay-out
- H05K1/112—Pads for surface mounting, e.g. lay-out directly combined with via connections
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- H01L21/48—
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- H01L23/4952—
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- H01L23/49816—
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- H01L24/81—
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/464—Additional interconnections in combination with leadframes
- H10W70/465—Bumps or wires
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W99/00—Subject matter not provided for in other groups of this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
- H10W70/095—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers of vias therein
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/63—Vias, e.g. via plugs
- H10W70/635—Through-vias
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
- H10W70/654—Top-view layouts
- H10W70/655—Fan-out layouts
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
- H10W70/654—Top-view layouts
- H10W70/656—Fan-in layouts
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07202—Connecting or disconnecting of bump connectors using auxiliary members
- H10W72/07204—Connecting or disconnecting of bump connectors using auxiliary members using temporary auxiliary members, e.g. sacrificial coatings
- H10W72/07207—Temporary substrates, e.g. removable substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07302—Connecting or disconnecting of die-attach connectors using an auxiliary member
- H10W72/07304—Connecting or disconnecting of die-attach connectors using an auxiliary member the auxiliary member being temporary, e.g. a sacrificial coating
- H10W72/07307—Connecting or disconnecting of die-attach connectors using an auxiliary member the auxiliary member being temporary, e.g. a sacrificial coating the auxiliary member being a temporary substrate, e.g. a removable substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07502—Connecting or disconnecting of bond wires using an auxiliary member
- H10W72/07504—Connecting or disconnecting of bond wires using an auxiliary member the auxiliary member being temporary, e.g. a sacrificial coating
- H10W72/07507—Connecting or disconnecting of bond wires using an auxiliary member the auxiliary member being temporary, e.g. a sacrificial coating the auxiliary member being a temporary substrate, e.g. a removable substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
- H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
- H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
- H10W74/117—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Definitions
- the present disclosure relates to a circuit substrate for mounting a microchip, a method for manufacturing the circuit substrate, and a chip package structure having the circuit substrate.
- chip packages may include a circuit substrate and a chip.
- the PCB is configured to form a connecting pad.
- Most of the circuit substrates include a plurality of patterned electrically conductive layers, which make the circuit substrate thick.
- FIG. 1 is a cross-sectional view of a flexible single-sided copper clad laminate in accordance with a first exemplary embodiment, comprising an insulation layer and a copper foil formed on the insulation layer.
- FIG. 2 shows through holes defined in the insulation layer of the flexible single-sided copper clad laminate of FIG. 1 .
- FIG. 3 shows two etch-resistant coatings formed on opposite sides of the flexible single-sided copper clad laminate of FIG. 2 .
- FIG. 4 shows the copper foil of FIG. 3 converted into a patterned electrically conductive layer and the two etch-resistant coatings removed.
- FIG. 5 shows a solder mask layer formed on the patterned electrically conductive layer of FIG. 4 , and a plurality of openings defined in the solder mask layer for exposing part of the patterned electrically conductive layer, thereby forming a plurality of conductive pads.
- FIG. 6 shows a seed layer formed on a surface of the insulation layer of FIG. 5 facing away from the patterned electrically conductive layer, an inner surface of the through hole and a surface of the patterned electrically conductive layer in the through hole using a sputtering process.
- FIG. 7 shows a stiffener stacked on the seed layer of FIG. 6 .
- FIG. 8 shows a surface plating layer formed on each of the conductive pads of FIG. 7 , thereby obtaining a circuit substrate.
- FIG. 9 shows a chip mounted on the circuit substrate of FIG. 8 through a wire-bonding method.
- FIG. 11 shows the stiffer of FIG. 10 removed.
- FIG. 12 shows the seed layer of FIG. 11 removed.
- FIG. 13 shows a solder bump in each of the through holes of FIG. 12 and electrically connected to the patterned electrically conductive layer in the through hole, and the solder bumps projected out of the through hole, thereby obtaining a chip package.
- FIG. 14 is a cross-sectional view of a chip package in accordance with a second exemplary embodiment.
- FIGS. 1-13 show a method for manufacturing a chip package in accordance with a first exemplary embodiment. The method includes the following steps.
- FIGS. 1-4 show a flexible single-sided circuit board 10 .
- the flexible single-sided circuit board 10 includes an insulation layer 11 and an patterned electrically conductive layer 12 formed on the insulation layer 11 .
- the insulation layer 11 has a first surface 111 , an opposite second surface 112 , and a plurality of through holes 13 passing through the first surface 111 and the second surface 112 .
- the patterned electrically conductive layer 12 is formed on the first surface 111 of the insulation layer 11 , and covers the through holes 13 .
- a flexible single-sided copper clad laminate (CCL) 10 a is provided.
- the flexible single-sided CCL 10 a includes the insulation layer 11 and a copper foil 14 .
- the copper foil 14 is formed on the first surface 111 of the insulation layer 11 .
- a material of the insulation layer 11 can be selected from the group consisting of Polyimide (PI), Polyethylene Terephthalate (PET) and Polyethylene Naphthalate (PEN).
- a thickness of the insulation layer 11 can be in the range from 15 ⁇ m to 250 ⁇ m, and preferably from 25 ⁇ m to 50 ⁇ m.
- a thickness of the copper foil 14 can be in the range from 12 ⁇ m to 35 ⁇ m.
- FIG. 2 shows that the through holes 13 are formed using a laser bombarding method or a drilling method.
- the through holes 13 pass through the first surface 111 and the second surface 112 , and terminate at the copper foil 14 , thus the copper foil 14 is exposed to the through holes 13 .
- each through hole 13 has a round cross section.
- FIGS. 3-4 show that the copper foil 14 is partly removed.
- the removing of the copper foil 14 forms the patterned electrically conductive layer 12 .
- the patterned electrically conductive layer 12 covers the through holes 13 .
- the patterned electrically conductive layer 12 has a plurality of portions exposed in the through holes 13 to sever as a plurality of first conductive pads 121 .
- the patterned electrically conductive layer 12 can be formed by using exposure, developing, and etching methods. An example of a method for forming the patterned electrically conductive layer 12 is described in detail as follows:
- a first etch-resistant coating 113 is formed on the copper foil 14
- a second etch-resistant coating 114 is formed on the second surface 112 of the insulation layer 11 .
- the first etch-resistant coating 113 covers the entire surface of the copper foil 14
- the second etch-resistant coating 114 covers the entire second surface 112 and openings of the through holes 13 .
- the first and second etch-resistant coatings 113 and 114 are a dry-film type.
- the second etch-resistant coating 114 prevents the copper foil 14 in the through holes 13 from being etched by etchant applied in a following step.
- the second etch-resistant coating 114 covers the openings of all through holes 13 and part of the second surface 112 .
- the first and second etch-resistant coatings 113 and 114 can also be a wet-film type.
- the first etch-resistant coating 113 is patterned by being partly exposed to a UV light and then being developed, thus part of the copper foil 14 is exposed. Furthermore, the exposed copper foil 14 is removed by an etching method. Finally, the remaining first etch-resistant coating 113 and the second etch-resistant coating 114 are removed by a stripping process, thereby obtaining the flexible single-sided circuit board 10 .
- FIG. 5 shows that a solder mask layer 15 is formed on the patterned electrically conductive layer 12 and the first surface 111 not covered by the patterned electrically conductive layer 12 .
- the solder mask layer 15 defines a plurality of openings 162 for exposing part of the patterned electrically conductive layer 12 .
- the patterned electrically conductive layer 12 exposed to the openings 162 serves as a plurality of second conductive pads 16 .
- the second conductive pads 16 are respectively electrically connected to the first conductive pads 121 .
- a material of the solder mask layer 15 can be liquid photoimageable solder resist ink or thermosetting solder resist ink.
- steps ( 1 )-( 2 ) can be a roll-to-roll process.
- FIGS. 6-8 shows that a seed layer 18 is formed on the second surface 112 , the inner surface of the through hole 13 and surfaces of the first conductive pads 121 in the through hole 13 .
- a stiffener 115 is arranged on the seed layer 18 formed on the second surface 112 .
- the stiffener 115 covers the second surface 112 and openings of the through holes 13 at the second surface 112 .
- a surface plating layer 161 is formed on each of the second conductive pads 16 , thereby obtaining a circuit substrate 20 .
- FIG. 6 shows that the seed layer 18 is formed on the second surface 112 , the inner surface of the through hole 13 and surfaces of the first conductive pads 121 in the through hole 13 using a sputtering process.
- the seed layer 18 is electrically connected to the patterned electrically conductive layer 12 .
- an electroless copper plating method can also form the seed layer 18 .
- a thickness of the seed layer 18 can be in the range from 5 ⁇ m to 15 ⁇ m.
- FIG. 7 shows that the stiffener 115 is attached to the second surface 112 .
- the stiffener 115 can be attached to the second surface 112 by an adhesive sheet.
- the stiffener 115 reinforces the rigidity of flexible single-sided circuit board 10 in the sequent process.
- the stiffener 115 also prevents the seed layer 18 from being plated gold in a following plating step.
- the stiffener 18 can be a stiffening board comprising a material selected from the group consisting of epoxy resin, phenolic resin, metal and any combination thereof.
- FIG. 8 shows that the surface plating layer 161 is formed by gold plating, thereby protecting the second conductive pads 16 from oxidation and is beneficial for linking golden wires when mounting a chip using a wire-bonding method.
- the surface plating layer 161 can also be formed by nickel gold plating, nickel palladium gold plating, or tin plating. Certainly, the surface plating layer 161 can also be omitted.
- the circuit board 20 includes an insulation layer 11 , an patterned electrically conductive layer 12 formed the first surface 111 of the insulation layer 11 , and a solder mask layer 15 .
- the insulation layer 11 defines a plurality of through holes 13 passing through the second surface 112 and the first surface 111 of the insulation layer 11 .
- the patterned electrically conductive layer 12 covers the through holes 13 at the first surface 111 .
- the patterned electrically conductive layer 12 in the through hole forms a plurality of first conductive pads 121 .
- a seed layer 18 is formed over the second surface 112 , inner surfaces of the through holes 13 and the first conductive pads 121 exposed in the through holes 13 .
- a stiffener 115 is attached to on the seed layer 18 on the second surface 112 , and covers the through holes 13 at the second surface 112 .
- the solder mask layer 15 is formed on the patterned electrically conductive layer 12 and the first surface 111 not covered by the patterned electrically conductive layer 12 .
- the solder mask layer 15 defines a plurality of openings 162 for exposing part of the patterned electrically conductive layer 12 .
- the patterned electrically conductive layer 12 is exposed to the openings 162 forming a plurality of second conductive pads 16 .
- the second conductive pads 16 are respectively electrically connected to the first conductive pads 121 .
- a surface plating layer 161 is formed on each of the second conductive pads 16 .
- the golden wires 32 are electrically connected with the chip 30 , and correspond to the second conductive pads 16 .
- the chip 30 is fixed to a surface of the solder mask layer 15 through an adhesive layer 31 , and the golden wires 32 are welded to the surface plating layer 161 .
- the molding compound can be epoxy molding compound.
- the stiffener 115 can be removed using a stripping technology.
- the seed layer 18 can be removed using etching.
- the end portion of the solder ball 46 can also be cylindrical or ellipsoid-shaped.
- a material of the solder ball 46 can be comprised of tin.
- the solder balls 46 can be formed using screen printing or plating.
- the chip package 50 includes an insulation layer 11 , an patterned electrically conductive layer 12 formed the first surface 111 of the insulation layer 11 , a solder mask layer 15 , a chip 30 , an encapsulating layer 40 and a plurality of solder balls 46 .
- the insulation layer 11 defines a plurality of through holes 13 passing through the second surface 112 and the first surface 111 of the insulation layer 11 .
- the patterned electrically conductive layer 12 covers the through holes 13 at the first surface 111 .
- the patterned electrically conductive layer 12 in the through hole forms a plurality of first conductive pads 121 .
- the solder mask layer 15 is formed on the patterned electrically conductive layer 12 and the first surface 111 not covered by the patterned electrically conductive layer 12 .
- the solder mask layer 15 defines a plurality of openings 162 for exposing part of the patterned electrically conductive layer 12 .
- the patterned electrically conductive layer 12 exposed to the openings 162 forms a plurality of second conductive pads 16 .
- the second conductive pads 16 are respectively electrically connected to the first conductive pads 121 .
- a surface plating layer 161 is formed on each of the second conductive pads 16 .
- the solder balls 46 are respectively formed in the through holes 13 and protrude from the second surface 112 .
- the solder balls 46 are respectively electrically connected to the first conductive pads 121 .
- the chip 30 is fixed on the solder mask layer 15 through an adhesive layer 31 .
- the chip 30 is electrically connected to the surface plating layers 161 on the second conductive pads 16 through a plurality of golden wires 32 .
- the golden wires 32 correspond to the second conductive pads 16 .
- the golden wires 32 , the chip 30 , the solder mask layer 15 , and the surface plating layer 161 are encapsulated in the encapsulating layer 40 .
- the circuit board 20 and the chip package 50 just include a single patterned electrically conductive layer 12 .
- the circuit board 20 and the chip package 50 are thinner, and the methods of manufacturing are easier.
- the chip 30 a is fixed to the circuit board 20 using a flip-chip method.
- the chip 30 a includes a plurality of contact bumps 32 a corresponding to the second conductive pads 16 .
- a plurality of solder bumps 161 a are formed on the surface plating layer 161 on the second conductive pads 16 .
- the chip 30 a is positioned on the circuit substrate 20 in a manner that the contact bumps 32 a contact the corresponding solder bumps 161 a . Then each of the contact bumps 32 a and the corresponding solder bumps 161 a are melted using a reflow soldering to form the solder bump 34 a having a single continuous body of material.
- the solder bumps 161 a can be formed using screen printing or plating.
- the solder bumps 161 a projects beyond the surface of the solder mask layer 15 .
- An end portion of each of the solder bumps 161 a can be cylindrical or ball-shaped.
- a material of the solder bump 161 a can be comprised of tin.
- the underfill layer 40 a firmly fixes the chip 30 a to the circuit board 20 .
- the underfill is filed through a capillary action of the gap between the bottom surface 42 a of the chip 30 a and the surface of the solder mask layer 15 when the underfill is arranged at the opening of the gap.
- the underfill layer 40 a can be comprised of an epoxy resin, such as Loctite 3536.
- a chip package 60 is obtained.
- the chip package 60 is similar to the chip package 50 of the first exemplary embodiment.
- the distinguishing features are that the chip package 60 includes a chip 30 a instead of the chip 30 in the first exemplary embodiment.
- the chip 30 a is electrically connected to the surface plating layers 161 on the second conductive pads 16 with a plurality of solder bumps 34 a .
- the gap between a bottom surface 42 a of the chip 30 a and the surface of the solder mask layer 15 is filled with the underfill layer 40 a , thereby firmly fixing the chip 30 a to the circuit board 20 .
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Wire Bonding (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Structure Of Printed Boards (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210261162.1A CN103579128B (en) | 2012-07-26 | 2012-07-26 | Chip package base plate, chip-packaging structure and preparation method thereof |
| CN2012102611621 | 2012-07-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| US20140027893A1 US20140027893A1 (en) | 2014-01-30 |
| US8951848B2 true US8951848B2 (en) | 2015-02-10 |
Family
ID=49994084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US13/771,320 Active 2033-05-13 US8951848B2 (en) | 2012-07-26 | 2013-02-20 | Circuit substrate for mounting chip, method for manufacturing same and chip package having same |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8951848B2 (en) |
| CN (1) | CN103579128B (en) |
| TW (1) | TWI483363B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10453671B2 (en) | 2017-03-09 | 2019-10-22 | Samsung Electronics Co., Ltd. | Combined structure of flexible semiconductor device package and method of transporting the flexible semiconductor device |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN103579128A (en) | 2014-02-12 |
| TWI483363B (en) | 2015-05-01 |
| CN103579128B (en) | 2016-12-21 |
| TW201405745A (en) | 2014-02-01 |
| US20140027893A1 (en) | 2014-01-30 |
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