US6783446B1 - Chemical mechanical polishing apparatus and method of chemical mechanical polishing - Google Patents

Chemical mechanical polishing apparatus and method of chemical mechanical polishing Download PDF

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Publication number
US6783446B1
US6783446B1 US09/256,707 US25670799A US6783446B1 US 6783446 B1 US6783446 B1 US 6783446B1 US 25670799 A US25670799 A US 25670799A US 6783446 B1 US6783446 B1 US 6783446B1
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polishing pad
polishing
holes
substrate
set forth
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Mieko Suzuki
Yasuaki Tsuchiya
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Renesas Electronics Corp
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NEC Electronics Corp
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Assigned to NEC ELECTRONICS CORPORATION reassignment NEC ELECTRONICS CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NEC CORPORATION
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved

Definitions

  • the invention relates to an apparatus for polishing a substrate for planarization by chemical mechanical polishing.
  • the invention relates further to a method of chemical mechanical polishing.
  • FIGS. 1A to 1 E illustrate respective steps in a method of forming a buried metal layer in a semiconductor device.
  • a semiconductor substrate 101 including active devices fabricated thereon is covered entirely with an insulating film 102 .
  • a resist film 105 having a certain pattern is formed on the insulating film 102 , and subsequently, the insulating film 102 is etched with the patterned resist film 105 being used as a mask, to thereby form a contact hole 106 through the insulating film 102 , as illustrated in FIG. 1 B.
  • a barrier film 103 composed of metal such as Ti or Ta is deposited over the insulating film 102 so that the contact hole 106 is covered at a sidewall and a bottom thereof with the barrier film 103 .
  • an electrically conductive layer 104 is deposited over the product to thereby fill the contact hole 106 with the electrically conductive layer 104 .
  • the electrically conductive film 104 is planarized by means of a chemical mechanical polishing apparatus 107 , as illustrated in FIG. 1 E.
  • a buried metal layer 108 is formed.
  • the chemical mechanical polishing apparatus 107 includes a carrier on which a wafer to be polished is fixed, and a rotatable level block on which a polishing pad is mounted. A wafer is compressed onto a rotating polishing pad to thereby be polished. While a wafer is being polished by the polishing pad, polishing powder such as alumina or silica, and polishing slurry containing etchant such as H 2 O 2 are supplied between the polishing pad and the wafer.
  • FIG. 2 illustrates a conventional apparatus for polishing a wafer by chemical mechanical polishing.
  • the illustrated apparatus is comprised of a level block 23 connected to a rotatable shaft 24 , a polishing pad 29 fixed onto the level block 23 , a wafer holder 26 connected to a rotatable shaft 27 and holding a wafer 25 on a bottom thereof, and a slurry source 30 supplying polishing slurry onto the polishing pad 29 through a slurry supply port 21 .
  • the wafer 25 is sandwiched between the polishing pad 29 and the wafer holder 26 . While the wafer 25 is being polished by the polishing pad 29 , polishing slurry 22 is supplied between the polishing pad 29 and the wafer 25 around a periphery of the wafer 25 .
  • the illustrated apparatus is designed to have one wafer holder 26
  • the apparatus may be designed to have a plurality of wafer holders 26 .
  • the apparatus may be designed to have four wafer holders 26 equally spaced from one another above the level block 23 in order to concurrently polish four wafers at a time.
  • a conventional apparatus for polishing a wafer such as the apparatus illustrated in FIG. 2, is accompanied with a problem of non-uniformity in polishing speed in a wafer, which results in that a wafer is polished around a center thereof to a greater degree than a periphery thereof.
  • a first polishing apparatus in which a polishing pad mounted on a level block is formed with a plurality of small through-holes through which polishing slurry is supplied onto a surface of the polishing pad from a polishing slurry source.
  • the small through-holes are positioned in concentration with an axis of the polishing pad 29 . Since polishing slurry is uniformly supplied between a wafer and the polishing pad, it would be possible to keep a polishing speed constant to thereby enhance uniformity in polishing a wafer.
  • polishing pad is composed of porous material in order to enhance uniformity in polishing a wafer.
  • a polished wafer would have a cross-section like a cross-section of a concave lens, if a wafer is polished in accordance with the above-mentioned first or second polishing apparatuses in which polishing slurry is uniformly supplied to a surface of a wafer, whereas a polished wafer would have a cross-section like a convex lens, if a wafer is polished in accordance with the apparatus illustrated in FIG. 2 .
  • Japanese Unexamined Patent Publication No. 5-13389 has suggested a polishing apparatus which has the same structure as that of the above-mentioned first and second polishing apparatus, but is capable of controlling an amount of polishing slurry at a predetermined position of a polishing pad for the purpose of enhancing uniformity in polishing a wafer.
  • the suggested polishing apparatus is formed with a plurality of through-holes through which polishing slurry is supplied onto a surface of a polishing pad, in such a manner that the number of through-holes per a unit area in a region closer to a center of a polishing pad is designed to be greater than the number of through-holes per a unit area in a region closer to a periphery of a polishing pad, or that a through-hole located closer to a center of a polishing pad is designed to have a greater diameter than a diameter of a through-hole located closer to a periphery of a polishing pad.
  • a diameter of a wafer necessary to be polished is increasing. For instance, a diameter of a wafer to be polished years ago was 6 inches (about 15 cm), but a diameter of a wafer to be polished presently is in the range of 8 to 10 inches (about 20 to about 25 cm). Such a wafer having a great diameter could not be polished by means of such an apparatus as illustrated in FIG. 2, because the level block 23 has to have too much area, which results in too high load to the apparatus.
  • the illustrated apparatus is comprised of a rotatable carrier 2 supporting a wafer 1 at a bottom thereof, a level block 3 , a polishing pad 4 mounted on the level block 3 and positioned in facing relation to the carrier 2 , and a motor 5 for rotating the level block 3 around a rotation axis.
  • the polishing pad 4 is formed with a plurality of through-holes equally spaced from one another.
  • the wafer 2 is made to rotate, and then, is compressed onto the rotating polishing pad 4 . While the wafer 1 is being polished. While the wafer 2 is being polished, slurry 6 is supplied onto a surface of the polishing pad 4 through the through-holes.
  • the level block 3 is rotated by means of the motor 5 in such a manner that the rotation axis of the level block 3 moves along an arcuate path. That is, the level block 3 makes so-called orbital revolution.
  • FIG. 4 shows a positional relation in orbital revolution between the wafer 1 rotating around a rotation axis A and the polishing pad 4 rotating around a rotation axis B. As illustrated in FIG. 4, if viewed from the rotation axis A, the rotation axis B rotates around the rotation axis A.
  • a wiring to be formed on an insulating film has different heights above a central region and a peripheral region of a wafer. Accordingly, a wiring resistance above a central region of a wafer becomes different from a wiring resistance above a peripheral region of a wafer with the result of deterioration in electro-migration (EM).
  • EM electro-migration
  • the inventors had conducted a lot of experiments in order to accomplish the above-mentioned object, and had found out that if a polishing pad is designed to include a region where there are formed no through-holes through which polishing slurry is supplied to a surface of the polishing pad, it would be possible to enhance uniformity in polishing a wafer.
  • an apparatus for polishing a substrate including (a) a polishing pad formed with a plurality of through-holes through which polishing material is supplied to a surface of the polishing pad, (b) a level block on which the polishing pad is mounted, and (c) a rotatable carrier for supporting a substrate thereon, the carrier being positioned in facing relation with the level block, the level block being rotatable around a rotation axis thereof with the rotation axis being moved along an arcuate path, and causing the polishing pad to make contact with the substrate for polishing the substrate, the polishing pad having a first ring-shaped region concentric thereto where no through-holes are formed.
  • the first ring-shaped region has a width equal to or greater than 10%, more preferably 20%, of a radius of the polishing pad.
  • the through-holes are positioned in alignment with a peripheral region of the substrate when an axis of the level block is in alignment with an axis of the carrier.
  • the through-holes are positioned in a second ring-shaped region having an outer periphery common to an outer periphery of the polishing pad and having a width equal to 5% or smaller of a radius of the polishing pad.
  • the polishing pad includes a circular region concentric to the polishing pad and located inside the first ring-shaped region, and a third ring-shaped region located outside the first ring-shaped region, the circular region and the third ring-shaped region including the through-holes therein.
  • the third ring-shaped region has an outer periphery common to an outer periphery of the polishing pad.
  • the through-holes formed in the third ring-shaped region are positioned in alignment with a peripheral region of the substrate when an axis of the level block is in alignment with an axis of the carrier.
  • a total area of the through-holes varies in a radius-wise direction of the, polishing pad.
  • the number of the through-holes per a unit area may be designed to decrease in a direction from an outer periphery to a center of the polishing pad.
  • diameters of the through-holes may be designed to decrease in a direction from an outer periphery to a center of the polishing pad.
  • an apparatus for polishing a substrate including (a) a polishing pad formed with a plurality of through-holes through which polishing material is supplied to a surface of the polishing pad, (b) a level block on which the polishing pad is mounted, and (c) a rotatable carrier for supporting a substrate thereon, the carrier being positioned in facing relation with the level block, the level block being rotatable around a rotation axis thereof with the rotation axis being moved along an arcuate path, and causing the polishing pad to make contact with the substrate for polishing the substrate, the polishing pad having a circular region concentric thereto where no through-holes are formed.
  • the circular region has a radius equal to or smaller than 95% of a radius of the polishing pad.
  • the circular region has a radius equal to or greater than 30% of a radius of the polishing pad.
  • a method of carrying out chemical mechanical polishing to a substrate including the steps of (a) rotating a level block on which a polishing pad is mounted, relative to a carrier on which a substrate is mounted, around a rotation axis thereof with the rotation axis being moved along an arcuate path, and (b) supplying polishing material on a surface of the polishing pad while the substrate is being polished by the polishing pad, in a region other than a first ring-shaped region concentric to the polishing pad.
  • the polishing material may be supplied on a surface of the polishing pad through through-holes formed with the polishing pad.
  • the polishing material is supplied on a surface of the polishing pad in a second ring-shaped region having an outer periphery common to an outer periphery of the polishing pad and having a width equal to 5% or smaller of a radius of the polishing pad.
  • the polishing pad includes a circular region concentric to the polishing pad and located inside the first ring-shaped region, and a third ring-shaped region located outside the first ring-shaped region, the polishing material being supplied into the circular region and the third ring-shaped region.
  • the polishing material is supplied onto a surface of the polishing pad in a varying amount in a radius-wise direction of the polishing pad.
  • the polishing material may be supplied in a greater amount in a region closer to a center of the polishing pad.
  • a method of carrying out chemical mechanical polishing to a substrate including the steps of (a) rotating a level block on which a polishing pad is mounted, relative to a carrier on which a substrate is mounted, around a rotation axis thereof with the rotation axis being moved along an arcuate path, and (b) supplying polishing material on a surface of the polishing pad while the substrate is being polished by the polishing pad, in a region other than a circular region concentric to the polishing pad.
  • the circular region has a radius equal to or smaller than 95% of a radius of the polishing pad.
  • the circular region has a radius equal to or greater than 30% of a radius of the polishing pad.
  • a polishing pad is designed to have a region in which through-holes through which polishing material is supplied to a surface of the polishing pad are not formed.
  • polishing material is supplied to a surface of a polishing pad in a region other than a certain region of the polishing pad.
  • FIGS. 1A to 1 E are cross-sectional views of a semiconductor device, illustrating respective steps of a method of forming a buried metal layer by chemical mechanical polishing.
  • FIG. 2 illustrates a conventional apparatus for polishing a wafer.
  • FIG. 3A illustrates an apparatus for polishing a wafer, to which apparatus the present invention may be applied.
  • FIG. 3B is a plan view of a polishing pad employed in the apparatus illustrated in FIG. 3 A.
  • FIG. 3C is a plan view of another polishing pad employed in the apparatus illustrated in FIG. 3 A.
  • FIG. 4 illustrates a positional relation between two rotation axes in orbital revolution.
  • FIG. 5 is a graph showing a relation between uniformity in a polishing rate and a radius of a circular region in which through-holes are closed.
  • FIG. 6 is a graph showing a relation between uniformity in a polishing rate and a radius of a circular region in which through-holes are open.
  • FIG. 7 is a flow chart of a method of polishing a wafer.
  • FIG. 3A illustrates an apparatus for polishing a substrate, in accordance with the first embodiment of the present invention.
  • the illustrated apparatus is comprised of a polishing pad 4 formed with a plurality of through-holes (shown in phantom at 6 A) through which polishing slurry 6 is supplied to a surface of the polishing pad 4 , a level block 3 on which the polishing pad 4 is mounted, a motor 5 for rotating the level block 3 around a rotation axis, and a rotatable carrier 2 for supporting a wafer 1 at a bottom surface thereof in facing relation with the polishing pad 4 .
  • the polishing pad 4 makes orbital revolution around the rotation axis 1 A of the wafer 1 .
  • the level block 3 and hence the polishing pad 4 are rotated around a rotation axis 3 A thereof, and, at the same time, the rotation axis 3 A is moved along an arcuate path. That is, as illustrated in FIG. 4, if viewed from the rotation axis 1 A, the rotation axis 3 A rotates around the rotation axis 1 A.
  • the wafer 1 is compressed onto the polishing pad 4 to thereby be polished.
  • the polishing pad 4 is designed to have a first ring-shaped region 4 a which is concentric to a center 4 b of the polishing pad 4 , as illustrated in FIG. 3 B.
  • the through-holes through which the polishing slurry 6 is supplied to a surface of the polishing pad 4 are formed in a region, other than the first ring-shaped region 4 a, namely, in both a circular region 4 c located inside the first ring-shaped region 4 a and a ring-shaped region 4 d located outside the first ring-shaped region 4 a, whereas no through-holes are formed in the first ring-shaped region 4 a.
  • the apparatus in accordance with the first embodiment includes the polishing pad 4 which is designed to have the first ring-shaped region 4 a where there are formed no through-holes through which the polishing slurry 6 is supplied to a surface of the polishing pad 4 .
  • the wafer 1 is certainly polished in the first ring-shaped region 4 a, resulting in a polishing condition where high uniformity in a polishing rate is established.
  • the first ring-shaped region 4 a has a width equal to or greater than 10% of a radius of the polishing pad 4 for accomplishing sufficient uniformity in a polishing rate. It is more preferable that the first ring-shaped region 4 a has a width equal to or greater than 20% of a radius of the polishing pad 4 .
  • the polishing pad 4 is formed at a peripheral region thereof with the through-holes. It is more preferable that the through-holes are formed in the polishing pad 4 in alignment with a peripheral region of the wafer 1 , when the axis 3 A of the polishing pad 4 is in alignment with the axis 1 A of the wafer 1 .
  • the polishing pad 4 may be designed to be formed with the through-holes in a central region thereof, or may be designed to be formed with no through-holes in a central region thereof. If no through-holes are formed in a central region of the polishing pad 4 , it is preferable that no through-holes are formed in a circular region outwardly radially extending from a center of the polishing pad 4 and having a radius equal to or greater than 30% of a radius of the polishing pad 4 .
  • the through-holes are formed in a central region of the polishing pad 4 , which ensures higher uniformity in a polishing rate.
  • a total area of the through-holes may be designed to vary in a radius-wise direction of the polishing pad 4 .
  • the number of the through-holes per a unit area may be designed to decrease in a direction from an outer periphery to a center of the polishing pad 4 .
  • the through-holes may be designed to have a decreasing diameter in a direction from an outer periphery to a center of the polishing pad 4 .
  • a wafer to be polished there was used a wafer which had a diameter of 8 inches (about 20 cm) and on which metal films composed of Cu. Ta, and TiN were formed.
  • the wafer was polished by means of the apparatus illustrated in FIG. 3A.
  • a polishing pad was formed uniformly with the through-holes, and had a diameter of 10 inches (about 25 cm).
  • the wafer was polished with the through-holes located closer to a center of the polishing pad, being closed one by one.
  • FIG. 5 shows uniformity in a polishing rate in this experiment.
  • the uniformity was estimated with 3 ⁇ (%).
  • the polishing conditions were as follows.
  • Polishing slurry supply 100 cc/minute
  • the polishing slurry having been employed in this experiment was commercially available one.
  • the uniformity represented by 3 ⁇ is equal to or smaller than 15%, if the polishing pad had a circular region in which no though-holes are formed and which is concentric to a center of the polishing pad and has a diameter in the range of 1.5 inches to 4.7 inches.
  • high uniformity equal to or smaller than 10%, if the wafer had a diameter in the range of 2 inches to 4.5 inches.
  • the region 4 e has a radius equal to or greater than 30% of a radius of the polishing pad, as illustrated in FIG. 3 C.
  • the region 4 e where no through-holes are formed preferably has a radius equal to or smaller than 0.95R, but equal to or greater than 0.3R where R indicates a radius of the polishing pad 4 .
  • high uniformity in a polishing rate can be obtained in a 8-inch wafer having been employed in the experiment, if no through-holes are formed in the polishing pad within a circular region concentric to a center of the polishing pad and having a radius of 4 inches, which is equal to a radius of the 8-inch wafer, when a rotation axis of the polishing pad is in alignment with a rotation axis of the wafer.
  • rates of polishing Ta and TiN both of which are generally used as material of which a barrier film is composed were also estimated.
  • the through-holes of the polishing pad were all closed in a circular region concentric to a center of the polishing pad and having a radius of 4 inches, and then, the through-hole located closer to a center of the polishing pad was made open one by one.
  • Uniformity in a polishing rate, represented by 3 ⁇ , was estimated in the same manner as the above-mentioned estimation.
  • FIG. 6 shows the results of the experiment. As is understood in view of FIG. 6, uniformity of 15% or smaller can be obtained, even if the through-holes are made open in a circular region concentric to the polishing pad and having a radius of 3.5 inches. That is, if the polishing pad is designed to have a region where no through-holes are formed, which region has a width of 0.5 inches or greater, sufficient uniformity in a polishing rate can be obtained.
  • 0.5 inches correspond to 10% of a radius of the polishing pad.
  • a semiconductor device was fabricated in accordance with the steps illustrated in FIGS. 1A to 1 E.
  • a semiconductor substrate 101 including active devices fabricated thereon is covered entirely with an insulating film 102 .
  • a resist film 105 having a certain pattern is formed on the insulating film 102 , and subsequently, the insulating film 102 is etched with the patterned resist film 105 being used as a mask, to thereby form a contact hole 106 through the insulating film 102 , as illustrated in FIG. 1 B.
  • a barrier film 103 composed of metal such as Ti or Ta is deposited over the insulating film 102 so that the contact hole 106 is covered at a sidewall and a bottom thereof with the barrier film 103 .
  • an electrically conductive layer 104 composed of copper is deposited over the barrier film 103 to thereby fill the contact hole 106 with the electrically conductive layer 104 .
  • the electrically conductive film 104 is planarized by means of a chemical mechanical polishing apparatus 107 , as illustrated in FIG. 1 E.
  • a buried metal layer 108 is formed.
  • Example 2 the polishing apparatus illustrated in FIG. 3A was used as the chemical mechanical polishing apparatus 107 .
  • Polishing slurry supply 100 cc/minute
  • the polishing slurry having been employed in this experiment was commercially available.
  • the polishing pad having been employed in this experiment was designed to have a circular region concentric thereto and having a radius of 4 inches.
  • the thus fabricated semiconductor device was estimated with respect to resistance to electro-migration (EM). There was obtained quite high EM-resistance.
  • FIG. 7 is a flow chart of a method in accordance with the present invention.
  • step S 1 the level block 3 and hence the polishing pad 4 are made to carry out orbital revolution relative to the wafer 1 supported at a bottom of the carrier 2 .
  • the polishing pad 4 is rotated around the rotation axis 3 A, and at the same time, the rotation axis 3 A is rotated around the rotation axis 1 A of the wafer 1 in such a manner as illustrated in FIG. 4 .
  • step S 2 the polishing slurry 6 is supplied onto a surface of the polishing pad 4 while the wafer 1 is being polished by the polishing pad 4 , only in a region other than the ring-shaped region 4 a concentric to the polishing pad 4 .
  • the wafer 1 is polished with uniformity in a polishing rate, in step 3 .
  • the above-mentioned method provides the same advantages as those obtained by the polishing apparatus in accordance with the above-mentioned embodiment.
  • the polishing pad 4 may be designed to be formed with a circular region where no through-holes are formed, such as the circular region 4 e illustrated in FIG. 3C, in place of the ring-shaped region 4 a.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
US09/256,707 1998-02-26 1999-02-24 Chemical mechanical polishing apparatus and method of chemical mechanical polishing Expired - Fee Related US6783446B1 (en)

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JP4537298A JP2870537B1 (ja) 1998-02-26 1998-02-26 研磨装置及び該装置を用いる半導体装置の製造方法

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US20020130034A1 (en) * 2000-02-23 2002-09-19 Nutool Inc. Pad designs and structures for a versatile materials processing apparatus
US20050260933A1 (en) * 2000-04-04 2005-11-24 Norio Kimura Polishing apparatus and method
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US7678245B2 (en) 2000-02-17 2010-03-16 Applied Materials, Inc. Method and apparatus for electrochemical mechanical processing
JP3510177B2 (ja) * 2000-03-23 2004-03-22 株式会社東京精密 ウェハ研磨装置
JP3843933B2 (ja) * 2002-02-07 2006-11-08 ソニー株式会社 研磨パッド、研磨装置および研磨方法
US20050061674A1 (en) 2002-09-16 2005-03-24 Yan Wang Endpoint compensation in electroprocessing
US7842169B2 (en) 2003-03-04 2010-11-30 Applied Materials, Inc. Method and apparatus for local polishing control
US20060189269A1 (en) * 2005-02-18 2006-08-24 Roy Pradip K Customized polishing pads for CMP and methods of fabrication and use thereof
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CN1862391B (zh) * 2005-05-13 2013-07-10 安集微电子（上海）有限公司 除光阻层的组合物及其使用方法
CN102476349B (zh) * 2010-11-30 2014-05-07 中芯国际集成电路制造(上海)有限公司 一种化学机械研磨装置
US8739806B2 (en) * 2011-05-11 2014-06-03 Nanya Technology Corp. Chemical mechanical polishing system
CN107309788A (zh) * 2016-03-13 2017-11-03 芜湖乾凯材料科技有限公司 用于飞机发动机密封端面的精密研磨抛光机
CN110842769A (zh) * 2019-11-19 2020-02-28 长江存储科技有限责任公司 一种用于提高芯片摩擦去层均匀性的装置

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KR19990072948A (ko) 1999-09-27
CN1227152A (zh) 1999-09-01
TW494047B (en) 2002-07-11
JPH11239961A (ja) 1999-09-07
KR100283771B1 (ko) 2001-02-15
US20040259482A1 (en) 2004-12-23
JP2870537B1 (ja) 1999-03-17
CN1098746C (zh) 2003-01-15

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