US6552579B1 - Fuel gauge power switch with current sense - Google Patents

Fuel gauge power switch with current sense Download PDF

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Publication number
US6552579B1
US6552579B1 US10/126,384 US12638402A US6552579B1 US 6552579 B1 US6552579 B1 US 6552579B1 US 12638402 A US12638402 A US 12638402A US 6552579 B1 US6552579 B1 US 6552579B1
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Prior art keywords
output
coupled
drain
current
transistor
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US10/126,384
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English (en)
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Horst Knoedgen
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Renesas Design North America Inc
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Dialog Semiconductor Inc
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/25—Arrangements for measuring currents or voltages or for indicating presence or sign thereof using digital measurement techniques
    • G01R19/252—Arrangements for measuring currents or voltages or for indicating presence or sign thereof using digital measurement techniques using analogue/digital converters of the type with conversion of voltage or current into frequency and measuring of this frequency

Definitions

  • the invention relates to a current sense circuit for a power output, and more particularly, to a current sense circuit using a novel sensing current matching circuit and using a current controlled oscillator to generate a frequency proportional to the output current.
  • a principal object of the present invention is to provide an effective and very manufacturable current sense circuit for a power switch output.
  • a further object of the present invention is to provide a current sense circuit where a sense current is generated using a sense transistor.
  • a yet further object of the present invention is to improve the accuracy of the sense current by equalizing the drain to source voltage for the power transistor and the sense transistor.
  • Another further object of the present invention is to provide a digital frequency signal in proportion to the power switch output current using a current controlled oscillator.
  • Another still further object of the present invention is to provide a current sense circuit with a high dynamic range and excellent linearity.
  • Another still further object of the present invention is to provide a sense circuit with an adjustable sense factor.
  • a current sense circuit comprises, first, an output transistor having gate, source, and drain.
  • the drain is coupled to a load, the source is coupled to a power rail, and the gate is coupled to a control voltage such that the output transistor conducts an output current.
  • a sense transistor has gate, source, and drain. The source is coupled to the power rail, and the gate is coupled to the control voltage.
  • a sensing factor comprises the output transistor size divided by the sense transistor size.
  • a means of equalizing the sense transistor drain-to-source voltage and the output transistor drain-to-source voltage is used such that the sense transistor drain current comprises the output current divided by the sensing factor.
  • a current controlled oscillator is included.
  • the current controlled oscillator has input and output. The input comprises the sense transistor drain current.
  • the output comprises a cyclical signal having a frequency proportional to the output current.
  • FIG. 1 illustrates the preferred embodiment of the present invention.
  • FIG. 2 illustrates a more detailed version of the preferred embodiment of the present invention.
  • FIG. 3 illustrates a method for obtaining an adjustable sensing factor.
  • the preferred embodiments disclose a novel current sense circuit for a power switching output.
  • the present invention teaches a current sense circuit using a current sensing FET, a circuit to equalize the drain-to-source voltages of the power switch FET and sensing FET, and a current controlled oscillator to convert the sensing current into a proportional frequency. It should be clear to those experienced in the art that the present invention can be applied and extended without deviating from the scope of the present invention.
  • the circuit comprises, first, an output transistor NOUT 24 having gate, source, and drain.
  • the output transistor preferably comprises an NMOS FET device. Any FET device may be used, including a PMOS device.
  • the output transistor NOUT drain is coupled to an external load Z LOAD 32 at the output node VOUT 20 .
  • the source of NOUT 24 is coupled to a power rail, in this case the VIN voltage supply 10 .
  • the gate of NOUT 24 is coupled to a control voltage CONTROL 44 such that NOUT conducts an output current when CONTROL is asserted to a voltage above the threshold of NOUT.
  • the output is a high side driver circuit where the CONTROL signal 44 must be substantially higher than the output voltage VOUT and may require a charge pump.
  • Other biasing arrangements could be used. This is not a necessary feature of the present invention.
  • Z LOAD 32 may comprise a resistive load or an inductive load, such as a coil.
  • this circuit may comprise a part of a DC-to-DC converter.
  • a sense transistor NSENSE 28 has gate, source, and drain.
  • the source of NSENSE is coupled to the power rail VIN 10
  • the gate of NSENSE is coupled to the control voltage CONTROL 44 .
  • the sensing transistor NSENSE must comprise the same type of device as NOUT 24 . If NOUT is a NMOS device, then NSENSE should be a NMOS device of the same process parameters. Note that the output transistor NOUT has a relative size of R while the sensing transistor has the relative size of 1 where R>1.
  • NOUT 24 may be a very large drive transistor having a width of about 500 kilomicrons and length of about 0.5 microns. The sensing transistor NSENSE 28 would be much smaller.
  • NSENSE may have a width of about 500 microns and length of about 0.5 microns.
  • the sensing factor, R comprises the output transistor size divided by the sense transistor size. In this example case, R equals 1000. In the preferred embodiment, the sensing factor R comprises a range of between about 1 and 10,000. In addition, as an optional feature, the sensing factor R may be made variable. A preferred means of creating a variable sensing factor R is shown in FIG. 3 and discussed below.
  • a means of equalizing 56 , or drain coupling 56 , the sense transistor NSENSE 28 drain-to-source voltage and the output transistor NOUT 24 drain-to-source voltage is used such that the sense transistor NSENSE drain current I SENSE comprises the output current I OUT divided by the sensing factor R.
  • a preferred implementation of the drain coupling 56 is shown in FIG. 2 and discussed below.
  • a current controlled oscillator (CCO) 40 is included.
  • the current controlled oscillator 40 has input 38 and output DATAOUT 48 .
  • the input to the CCO 40 comprises the sense transistor drain current I SENSE .
  • the output DATAOUT 48 comprises a cyclical signal having a frequency proportional to the output current.
  • a preferred implementation of the CCO 40 is shown in FIG. 2 and discussed below.
  • FIG. 2 a more detailed version of the preferred embodiment of the present invention is shown. Several important features of the present invention are illustrated. Where like features between FIGS. 1 and 2 are illustrated, the elements have been numbered the same.
  • the means of equalizing 56 the drain voltages of NOUT 24 and NSENSE 28 is shown in detail.
  • the means of equalizing 56 the drain voltages of NOUT 24 and NSENSE 28 preferably comprises, first, a first transistor P 1 60 having gate, drain, and source.
  • the source of P 1 60 is coupled to the drain of NSENSE 28 .
  • the drain of P 1 60 is coupled to the drain of NOUT 28 .
  • a second transistor P 2 64 has gate, drain, and source.
  • the source of P 2 64 is coupled to the sense transistor NSENSE drain.
  • the drain of P 2 64 is coupled to the current controlled oscillator (CCO) 40 input.
  • Both P 1 60 and P 2 64 preferably comprise PMOS devices.
  • An amplifier A 1 68 having two inputs and an output completes the means of equalization 56 .
  • One input is coupled to the drain of NSENSE 28 .
  • the other input is coupled to the drain of NOUT 24 .
  • the output of A 1 68 is coupled to the P 1 60 and P 2 64 gates.
  • the circuit 56 forces the drain voltages of NOUT 24 and NSENSE 28 to nearly the same voltage while causing the sensing current I SENSE to flow into the CCO circuit 40 .
  • the circuit 40 preferably comprises, first, a S-R flip-flop 80 .
  • the S-R flip-flop 80 has set and reset inputs and an output.
  • the S-R flip flop 80 output comprises the current controlled oscillator output DATAOUT 48 .
  • a set comparitor QSET 92 has two inputs and an output. One QSET 92 input is coupled to a voltage reference VREF 102 . The output of QSET 92 is coupled to the S-R flip-flop 80 SET input.
  • a reset comparitor QRST 96 has two inputs and an output. One QRST 96 input is coupled to the voltage reference. The QRST 96 output is coupled to the S-R flip-flop 80 RESET input.
  • a set current-to-voltage converter 121 comprises the first switch SW SET 122 , the capacitor C SET 126 , and the second switch NSET 130 .
  • the set current-to-voltage converter 121 has an input 38 and an output VSET 100 .
  • the input to the set current-to-voltage converter 121 is the sense current I SENSE .
  • I SENSE is switchably coupled to the CCO 40 input by the first switch SW SET 122 .
  • SW SET 122 When SW SET 122 is ON, I SENSE charges C SET 126 and the current is thereby converted to the voltage VSET 100 .
  • VSET 100 is coupled to the set comparitor QSET 92 .
  • a reset current-to-voltage converter 111 comprises the first switch SW RST 110 , the capacitor C RST 114 , and the second switch NRST 118 .
  • the reset current-to-voltage converter 111 has an input 38 and an output VRST 104 .
  • the input to the set current-to-voltage converter 111 is also the sense current I SENSE .
  • I SENSE is switchably coupled to the CCO 40 input by the first switch SW RST 110 .
  • SW RST 110 is ON, I SENSE charges C RST 114 , and the current is thereby converted to the voltage VRST 104 .
  • VRST 104 is coupled to the reset comparitor QRST 96 .
  • the CCO circuit 40 operates in either the set or reset mode.
  • the S-R flip-flop 80 is set and the DATAOUT signal 48 is high.
  • the set second switch NSET 130 is ON and the set first switch SW SET 122 is OFF. Therefore, the VSET 100 node is pulled to ground 36 through NSET 130 .
  • the reset second switch NRST 118 is OFF and the reset first switch SW RST 110 is ON.
  • the sense current I SENSE charges C RST 114 , and the current is thereby converted to the voltage VRST 104 .
  • the reset current-to-voltage converter 111 is in the OFF state where NRST 118 is turned ON and SW RST 110 is turned OFF.
  • SW SET 122 is turned ON and NSET 130 is turned OFF. Therefore, the sense current I SENSE charges the set capacitor C SET 126 , and VSET 100 increases in voltage.
  • VSET 100 exceeds the value VREF 102 , the set comparitor QSET 92 is toggled.
  • the SET signal 84 is asserted. Since the RESET 88 is driven low by NRST 118 , the S-R flip-flop 80 is now forced to the SET state again.
  • the S-R flip-flop 80 output DATAOUT 48 will cyclically toggle between high and low at a frequency that is directly proportional to the I SENSE current.
  • the greater the value of I SENSE the faster the capacitors are charged and the faster DATAOUT 48 cycles. Smaller values of I SENSE reduce the cycle frequency. If the frequency is monitored, the energy of the power switch NOUT 24 can be monitored.
  • the novel design includes only the voltage reference VREF 102 that must be calibrated.
  • VREF 102 By calibrating VREF 102 , through trimming a resistor value for instance, a correction can be made for process variation in the capacitor values.
  • this simple CCO circuit 40 the linearity of the circuit is extremely high. Only the temperature drift of the capacitors C SET 126 and C RST 114 is important. This drift is only 30 ppm, however. Therefore, the system is very stable over temperature.
  • the sensing factor R can be adjusted to thereby adjust the dynamic range of the current. For example, for relatively small output currents I OUT , it may be desirable to reduce the sensing factor R so that the sensing current, I SENSE , remains large enough for good noise immunity and frequency output. Alternatively, it may be desirable to increase the sensing factor R when the output current I OUT is very large.
  • the sensing transistor 28 is divided into a plurality of sensing transistors, NS 1 200 , NS 2 204 , and NS 3 208 .
  • a series of switches SW 1 212 through SW 6 232 is used select which of any or which of a combination of the sensing devices are used.
  • a circuit of this type could be used to create a range of sensing factors such that, for example, a dynamic range of output current from about 10 microamps to about 3 amps could be converted into proportional frequencies using the same circuit.
  • the present invention provides an effective and very manufacturable current sense circuit for a power switch output.
  • the current sense circuit generates a sense current using a sense transistor.
  • the accuracy of the sense current is improved by equalizing the drain to source voltage for the power transistor and the sense transistor.
  • a cyclical output signal is generated having a frequency proportional to the power switch output current using a current controlled oscillator.
  • the current sense circuit exhibits a high dynamic range and excellent linearity.
  • the sense circuit may have an adjustable sensing factor.
  • the novel current sense circuit for a power switch provides an effective and manufacturable alternative to the prior art.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Dc-Dc Converters (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Driving Mechanisms And Operating Circuits Of Arc-Extinguishing High-Tension Switches (AREA)
  • Electronic Switches (AREA)
US10/126,384 2002-04-02 2002-04-19 Fuel gauge power switch with current sense Expired - Lifetime US6552579B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02392001 2002-04-02
EP02392004A EP1351061B1 (en) 2002-04-02 2002-04-02 Power switch with current sense circuit

Publications (1)

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US6552579B1 true US6552579B1 (en) 2003-04-22

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US10/126,384 Expired - Lifetime US6552579B1 (en) 2002-04-02 2002-04-19 Fuel gauge power switch with current sense

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US (1) US6552579B1 (enExample)
EP (1) EP1351061B1 (enExample)
JP (2) JP2003315383A (enExample)
KR (1) KR100627000B1 (enExample)
AT (1) ATE495454T1 (enExample)
DE (1) DE60238900D1 (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050062502A1 (en) * 2002-01-23 2005-03-24 Renesas Technology Corp. Logic circuit whose power switch is quickly turned on and off
US7327130B1 (en) * 2006-06-21 2008-02-05 Zilker Labs, Inc. Current sense method
DE102008051414B4 (de) * 2007-11-16 2013-04-18 Infineon Technologies Ag Strommessung mit geschalteten Kondensatoren
CN103389467A (zh) * 2012-05-08 2013-11-13 现代摩比斯株式会社 利用霍尔传感器的智能蓄电池传感器
CN106405214A (zh) * 2016-08-18 2017-02-15 中国航空工业集团公司上海航空测控技术研究所 一种压电传感器检测设备
US9621166B1 (en) * 2015-09-23 2017-04-11 Qualcomm Incorporated Wide frequency/voltage-ratio buffer with adaptive power consumption
US9946290B2 (en) 2015-08-31 2018-04-17 Samsung Electronics Co., Ltd. Current reference circuit and an electronic device including the same
WO2019217040A3 (en) * 2018-05-08 2019-12-19 Qualcomm Incorporated Differential current sensing with robust path, voltage offset removal and process, voltage, temperature (pvt) tolerance
US20210080492A1 (en) * 2019-09-17 2021-03-18 Renesas Electronics Corporation Semiconductor device and power device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4138708B2 (ja) * 2004-07-12 2008-08-27 浜松ホトニクス株式会社 光検出装置
GB2428301B (en) * 2005-07-13 2008-02-13 A D Developments Ltd Current measurement apparatus

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4553084A (en) * 1984-04-02 1985-11-12 Motorola, Inc. Current sensing circuit
US5680034A (en) 1995-09-22 1997-10-21 Toko, Inc. PWM controller for resonant converters
US5815027A (en) * 1995-06-07 1998-09-29 Siemens Aktiengesellschaft Circuit configuration for detecting a load current of a power semiconductor component with a source-side load
US5821740A (en) 1996-02-15 1998-10-13 Harris Corporation DC-to-DC converter having fast over-current detection and associated methods
US5986441A (en) * 1996-08-14 1999-11-16 Siemens Aktiengesellschaft Circuit configuration for capturing the load current of a power semiconductor component with a load on the source side
US6201417B1 (en) 1994-09-02 2001-03-13 Semiconductor Components Industries, Llc. Shaping a current sense signal by using a controlled slew rate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4147996A (en) * 1978-04-07 1979-04-03 Sprague Electric Company Current-controlled oscillator
JP3023591B2 (ja) * 1995-01-25 2000-03-21 日本プレシジョン・サーキッツ株式会社 電圧制御発振回路
US6348806B1 (en) * 1999-03-18 2002-02-19 Motorola, Inc. Method and apparatus for measuring gate leakage current in an integrated circuit

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4553084A (en) * 1984-04-02 1985-11-12 Motorola, Inc. Current sensing circuit
US6201417B1 (en) 1994-09-02 2001-03-13 Semiconductor Components Industries, Llc. Shaping a current sense signal by using a controlled slew rate
US5815027A (en) * 1995-06-07 1998-09-29 Siemens Aktiengesellschaft Circuit configuration for detecting a load current of a power semiconductor component with a source-side load
US5680034A (en) 1995-09-22 1997-10-21 Toko, Inc. PWM controller for resonant converters
US5821740A (en) 1996-02-15 1998-10-13 Harris Corporation DC-to-DC converter having fast over-current detection and associated methods
US5986441A (en) * 1996-08-14 1999-11-16 Siemens Aktiengesellschaft Circuit configuration for capturing the load current of a power semiconductor component with a load on the source side

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050062502A1 (en) * 2002-01-23 2005-03-24 Renesas Technology Corp. Logic circuit whose power switch is quickly turned on and off
US6989686B2 (en) * 2002-01-23 2006-01-24 Renesas Technology Corp. Logic circuit whose power switch is quickly turned on and off
US7327130B1 (en) * 2006-06-21 2008-02-05 Zilker Labs, Inc. Current sense method
DE102008051414B4 (de) * 2007-11-16 2013-04-18 Infineon Technologies Ag Strommessung mit geschalteten Kondensatoren
CN103389467A (zh) * 2012-05-08 2013-11-13 现代摩比斯株式会社 利用霍尔传感器的智能蓄电池传感器
US9946290B2 (en) 2015-08-31 2018-04-17 Samsung Electronics Co., Ltd. Current reference circuit and an electronic device including the same
US9621166B1 (en) * 2015-09-23 2017-04-11 Qualcomm Incorporated Wide frequency/voltage-ratio buffer with adaptive power consumption
CN106405214A (zh) * 2016-08-18 2017-02-15 中国航空工业集团公司上海航空测控技术研究所 一种压电传感器检测设备
CN106405214B (zh) * 2016-08-18 2019-04-05 中国航空工业集团公司上海航空测控技术研究所 一种压电传感器检测设备
WO2019217040A3 (en) * 2018-05-08 2019-12-19 Qualcomm Incorporated Differential current sensing with robust path, voltage offset removal and process, voltage, temperature (pvt) tolerance
US11047946B2 (en) 2018-05-08 2021-06-29 Qualcomm Incorporated Differential current sensing with robust path, voltage offset removal and process, voltage, temperature (PVT) tolerance
US20210080492A1 (en) * 2019-09-17 2021-03-18 Renesas Electronics Corporation Semiconductor device and power device

Also Published As

Publication number Publication date
EP1351061B1 (en) 2011-01-12
ATE495454T1 (de) 2011-01-15
KR100627000B1 (ko) 2006-09-22
DE60238900D1 (de) 2011-02-24
JP2010025946A (ja) 2010-02-04
EP1351061A1 (en) 2003-10-08
JP5222267B2 (ja) 2013-06-26
KR20030079761A (ko) 2003-10-10
JP2003315383A (ja) 2003-11-06

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