US6246156B1 - Piezoelectric/electrostrictive element - Google Patents

Piezoelectric/electrostrictive element Download PDF

Info

Publication number
US6246156B1
US6246156B1 US09/276,580 US27658099A US6246156B1 US 6246156 B1 US6246156 B1 US 6246156B1 US 27658099 A US27658099 A US 27658099A US 6246156 B1 US6246156 B1 US 6246156B1
Authority
US
United States
Prior art keywords
piezoelectric
electrostrictive
phase
ceramic substrate
tetragonal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US09/276,580
Other languages
English (en)
Inventor
Yukihisa Takeuchi
Koji Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Assigned to NGK INSULATORS, LTD. reassignment NGK INSULATORS, LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KIMURA, KOJI, TAKEUCHI, YUKIHISA
Application granted granted Critical
Publication of US6246156B1 publication Critical patent/US6246156B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
    • C04B35/486—Fine ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
    • C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
    • C04B35/491—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT
    • C04B35/493—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT containing also other lead compounds
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
    • C04B35/497—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates based on solid solutions with lead oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047—Membrane type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2311/00—Metals, their alloys or their compounds
    • B32B2311/02—Noble metals
    • B32B2311/04—Gold
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2315/00—Other materials containing non-metallic inorganic compounds not provided for in groups B32B2311/00 - B32B2313/04
    • B32B2315/02—Ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3258—Tungsten oxides, tungstates, or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3296—Lead oxides, plumbates or oxide forming salts thereof, e.g. silver plumbate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/76—Crystal structural characteristics, e.g. symmetry
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/76—Crystal structural characteristics, e.g. symmetry
    • C04B2235/762—Cubic symmetry, e.g. beta-SiC
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/76—Crystal structural characteristics, e.g. symmetry
    • C04B2235/765—Tetragonal symmetry
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/345—Refractory metal oxides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/345—Refractory metal oxides
    • C04B2237/346—Titania or titanates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/345—Refractory metal oxides
    • C04B2237/348—Zirconia, hafnia, zirconates or hafnates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/408—Noble metals, e.g. palladium, platina or silver
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/58—Forming a gradient in composition or in properties across the laminate or the joined articles
    • C04B2237/582—Forming a gradient in composition or in properties across the laminate or the joined articles by joining layers or articles of the same composition but having different additives
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N11/00—Investigating flow properties of materials, e.g. viscosity, plasticity; Analysing materials by determining flow properties
    • G01N11/10—Investigating flow properties of materials, e.g. viscosity, plasticity; Analysing materials by determining flow properties by moving a body within the material
    • G01N11/16—Investigating flow properties of materials, e.g. viscosity, plasticity; Analysing materials by determining flow properties by moving a body within the material by measuring damping effect upon oscillatory body

Definitions

  • the present invention relates to unimorph- and bimorph-type piezoelectric/electrostrictive elements used as various transducers and various actuators.
  • a piezoelectric/electrostrictive element is used in various fields such as various transducers for converting electrical energy into mechanical energy, that is, electrical energy into mechanical displacement, force, or vibration, and vice versa, various actuators, frequency-region functional components including various actuators and filters, various display devices including displays, sounding bodies including loudspeakers, microphones, and sensors including ultrasonic sensors.
  • a piezoelectric/electrostrictive element comprising a film-type piezoelectric/electrostrictive operating portion 5 constituted with a ceramic substrate 1 serving as a diaphragm and a first electrode film 2 , a piezoelectric/electrostrictive film 3 , and a second electrode film 4 formed on the ceramic substrate 1 (Japanese Patent Application Laid-Open No. 3-128681) as shown in FIG.
  • a piezoelectric/electrostrictive element in which a ceramic substrate has a cavity, the bottom of the cavity is constituted so as to be a thin-wall portion, and a piezoelectric/electrostrictive operating portion is integrated on the outer surface of the thin-wall portion (Japanese Patent Application Laid-Open No. 5-49270) as shown in FIG 1 ( b ).
  • a ceramic substrate using zirconium oxide partially stabilized with yttrium oxide is generally known as the ceramic substrate constituting a piezoelectric/electrostrictive element 7 (Japanese Patent Application Laid-Open Nos. 5-29675, 5-97437, and 5-270912).
  • a crack maybe recognized at a specific portion, that is, at a portion of ceramic-substrate 1 near the boundary of the first electrode film 2 as shown in FIGS. 2 ( a ) and 2 ( b ) particularly through heat treatment (firing) for integrating the piezoelectric/electrostrictive film 3 with the first electrode film 2 and the ceramic substrate 1 depending on the firing condition, and thereby a problem occurs that the production yield is lowered.
  • the yttrium oxide is decreased because the above portion is a portion which piezoelectric/electrostrictive film 3 directly contacts the ceramic substrate 1 when the piezoelectric/electrostrictive film 3 protrudes over the first electrode film 2 on the ceramic substrate 1 in order to prevent a short circuit from occurring between upper and lower electrodes, the yttrium oxide selectively diffuses to the piezoelectric/electrostrictive film 3 when the film 3 is sintered and integrated.
  • the vicinity of the boundary of the first electrode film 2 on the ceramic substrate 1 is a portion to which a large stress is easily applied to integrate the piezoelectric/electrostrictive film 3 , first electrode film 5 , and ceramic substrate 1 through heat treatment.
  • the stress under the heat treatment causes a decrease in the yttrium oxide because the stress becomes high particularly in the cavity structure.
  • crystal phase transformation of zirconium oxide is induced due to a decrease in the yttrium oxide and this results in the crack formation.
  • the partially stabilized zirconium oxide particularly the zirconium oxide partially stabilized with 2 to 4 mol % of yttrium oxide
  • the partially stabillized zirconium oxide is susceptible to crystal phase transformation and cracking if the amount of yttrium oxide serving as a stabilizer is decreased due to any factor while sintering the piezoelectric/electrostrictive film 3 as described above.
  • the above problem is peculiar to a piezoelectric/electrostrictive element constituted by integrating a ceramic substrate serving as a diaphragm with a film-type piezoelectric/electrostrictive operating portion through heat treatment without using an adhesive or the like.
  • the present invention is made to solve the above problems and its object is to provide an advanced-functional and high-performance piezoelectric/electrostrictive element that uses the strength of a ceramic substrate (diaphragm) and preventing a crack from being produced due to an internal factor when firing a piezoelectric/electrostrictive film.
  • the present invention provides a piezoelectric/electrostrictive-film-type element comprising: a ceramic substrate having a material whose main component is zirconium oxide and at least one film-type piezoelectric/electrostrictive operating portion comprising a first electrode film, a piezoelectric/electrostrictive film, and a second electrode film on the ceramic substrate; wherein the ceramic substrate comprises a base layer and a surface layer, and the crystal phase of the zirconium oxide of the base layer is a tetragonal phase or a mixed crystal phase of tetragonal and cubic phase, tetragonal and monoclinic phase, or tetragonal, cubic, and monoclinic phase, and the crystal phase of the zirconium oxide of the surface layer is mainly a cubic phase, and the piezoelectric/electrostrictive operating portion is formed on the surface layer.
  • the zirconium oxide of the surface layer is stabilizedwith 6 to 20 mol % of yttrium oxide.
  • the zirconium oxide of the base layer is partially stabilized with 2 to 4 mol % of yttrium oxide.
  • the crystal grain size of the zirconium oxide in the base layer is held within a range of 0.1 and 1.5 ⁇ m.
  • the thickness of a ceramic substrate is preferably set to 50 ⁇ m or less. Therefore, it is possible to thicken the portion where the diaphram is not present, that is, where, a piezoelectric/electrostrictive operating portion is not formed, and thereby, advantageously handle the ceramic substrate. Moreover, even when arranging devices adjacent to one another, it is possible to set a thick wall portion between elements and this is advantageous in preventing mutual interference between characteristics of the elements.
  • FIG. 1 ( a ) is a perspective view of a conventional piezoelectric/electrostrictive element and FIG. 1 ( b ) is a perspective view of another conventional piezoelectric/electrostrictive element.
  • FIG. 2 ( a ) is a sectional view of the crack occurrence portion of FIG. 1 ( a ), taken along the line A—A of FIG. 1 ( a ) and FIG. 2 ( b ) is a sectional view of the crack occurrence portion of FIG. 1 ( b ), taken along the line B—B of FIG. 1 ( b ).
  • FIG. 3 ( a ) is a schematic sectional view of a piezoelectric/electrostrictive element of the present invention
  • FIG. 3 ( b ) a schematic sectional view of another piezoelectric/electrostrictive element of the present invention.
  • FIG. 4 is a perspective view of another piezoelectric/electrostrictive element of the present invention.
  • a ceramic substrate 1 having a material whose main component is zirconium oxide comprises a base layer 10 and a surface layer 9 , and the surface layer 9 , on which a piezoelectric/electrostrictive operating portion 5 is formed, mainly comprises zirconium oxide whose main crystal phase is cubic phase.
  • the cubic phase is a stable crystal phase and it does not easily cause phase transformation even if yttrium oxide decreases due to the firing environment of the piezoelectric/electrostrictive operating portion 5 or the stress or diffusion caused in firing the portion 5 . Therefore, it is possible to effectively prevent a crack from occurring in the ceramic substrate 1 nearby the boundary of a first electrode film 2 .
  • a base layer 10 of a ceramic substrate 1 mainly comprises zirconium oxide which is a tetragonal phase or a mixed phase of tetragonal and cubic phase, tetragonal and monoclinic phase, or tetragonal, cubic, and monoclinic phase. Because the tetragonal phase or mixed phase of tetragonal and cubic phase, tetragonal and monoclinic phase, ortetragonal, cubic, and monoclinic phase is superior in toughness and strength, it is possible to provide a mechanical strength for the ceramic substrate 1 . Therefore, a piezoelectric/electrostrictive element having excellent functional characteristic and productivity is realized.
  • a main component in this application represents a component having a weight percentage of 85% or more.
  • identification and ratio calculation of each crystal phase included in a crystal system is performed in accordance with the X-ray diffraction method or Raman spectroscopy.
  • the X-ray diffraction method is used to obtain the content ratio of each crystal phase in accordance with the intensity ratio between typical diffraction peaks of the crystal phases.
  • the content ratio of cubic phase is defined by the content ratio of the cubic phase to each crystal phase and the content of cubic phase is obtained in accordance with the intensity ratio between main diffraction peaks of the crystal phases.
  • the expression “mainly cubic phase” represents meeting the following relation. I ⁇ C ⁇ ( 111 ) I ⁇ M ⁇ ( 1 _ ⁇ 11 ) + I ⁇ C ⁇ ( 111 ) + I ⁇ T ⁇ ( 111 ) ⁇ 0.70 , ⁇ preferably ⁇ 0.9
  • each diffraction-peak intensity is obtained as 25 and 43 (sum of (002) and (200)) to the main (111) diffraction-peak intensity 100 in accordance with the JCPDS card.
  • I.T (002) Diffraction intensity of (002) of tetragonal phase
  • the total thickness (base layer+surface layer) of the ceramic substrate 1 is 50 ⁇ m or less, more preferably 30 ⁇ m or less, and further preferably 15 ⁇ m or less in order to maintain the quick-response characteristic of the piezoelectric/electrostrictive element and from the viewpoint of the amount of displacement, generation force, or sensitivity of the element.
  • the ratio between the thicknesses of the base layer 10 and surface layer 9 is set to 6:4 to 8:2.
  • the surface layer 9 For the surface layer 9 to have a crystal phase that is mainly cubic phase, it is preferable to stabilize zirconium oxide in the surface layer by addition of 6 to 20 mol %, more preferably 7 to 10 mol % of yttrium oxide to the layer 9 .
  • the base layer 10 to have a crystal phase a tetragonal phase or mixed phase of tetragonal and cubic phase, tetragonal and monoclinic phase, or tetragonal, cubic, and monoclinic phase, it is preferable to stabilize zirconium oxide in the base layer 10 by addition of 2 to 4 mol %, more preferably 2.5 to 3.5 mol % of yttrium oxide to the layer 10 .
  • the crystal grain size of the zirconium oxide of the base layer 10 is held within a range of 0.1 and 1.5 ⁇ m and more preferable that the size is 1.0 ⁇ m or less. By setting the crystal grain size to the above range, it is possible to obtain a large strength even for a small thickness and moreover, stably form a predetermined crystal phase.
  • silicon oxide SiO or SiO 2
  • a sintering aid such as clay
  • the reaction with a material constituting a piezoelectric/electrostrictive operating portion increases under heat treatment of the piezoelectric/electrostrictive operating portion and it is difficult to control the composition of the piezoelectric/electrostrictive operating portion, especially that of the piezoelectric/electrostrictive film. Therefore, it is necessary to set the content of silicon oxide to less than 1 wt %.
  • a plurality of piezoelectric/electrostrictive elements are formed on a relatively large ceramic substrate 1 .
  • a piezoelectric/electrostrictive element of the present invention may be manufactured as described below.
  • the ceramic substrate 1 is made by separately manufacturing green sheets for the base and surface layers that are composed of a predetermined material respectively by a doctor blade or reverse roll coater, superimposing them on each other while applying heat and pressure, and firing them at a temperature of 1,200 to 1,600° C.
  • the ceramic substrate 1 by forming a surface layer on a green sheet for the base layer through screen printing, spraying, or coating method by using a slurry or paste serving as a surface-layer material (it is also possible to form a surface layer only on the portion on which a piezoelectric/electrostrictive operating portion is formed) and similarly firing the ceramic substrate 1 or it is possible to make the ceramic substrate 1 by forming a base layer on a green sheet for the surface layer through screen printing, spraying, or coating method.
  • a green sheet provided with one opening such as an aperture or cutout formed through its thickness serving as a cavity is prepared by using a die and a machining method such as ultrasonic machining in addition to the green sheet for the diaphragm (for the base and surface layers) to similarly superimpose both the green sheets on each other while applying heat and pressure and fire them. Furthermore, it is possible to form the ceramic substrate into a cavity structure provided with a member for closing an opening at an opposite side to the diaphragm.
  • the piezoelectric/electrostrictive operating portion 5 is formed on the ceramic substrate 1 by using a thick-film forming method such as screen printing, spraying, dipping, coating and electrophoresis, or a thin-film forming method such as ion-beam, sputtering, vacuum evaporation, ion plating, CVD, and plating.
  • a thick-film forming method such as screen printing, spraying, dipping, coating and electrophoresis
  • a thin-film forming method such as ion-beam, sputtering, vacuum evaporation, ion plating, CVD, and plating.
  • a thick-film forming method such as screen printing, spraying, dipping, coating and electrophoresis method is preferably used to form a piezoelectric/electrostrictive film.
  • a method for forming a pattern by using one of screen printing, photolithography, laser processing method such as excimer or YAG, and a method for forming a pattern by using a machining method such as ultrasonic machining or slicing and thereby removing unnecessary portions is used.
  • a temperature for heat-treating to integrate the film and ceramic substrate thus formed within a range of 900 to 1,400° C., more preferably, within a range of 1,000 to 1,400° C. is advantageously selected.
  • any material can be used for the first electrode film 2 constituting the piezoelectric/electrostrictive operating portion 5 as long as the material is a conductor capable of withstanding a high-temperature and an oxidation environment such as the above heat-treatment temperature and firing temperature.
  • the material is a conductor capable of withstanding a high-temperature and an oxidation environment such as the above heat-treatment temperature and firing temperature.
  • noble metals having a high melting point such as platinum, palladium, and rhodium
  • an electrode material mainly containing an alloy of silver and palladium, silver and platinum or platinum and palladium cermet made of platinum and a ceramic substrate material, cermet made of platinum and a piezoelectric material, and cermet made of platinum, a substrate material, and a piezoelectric material.
  • cermet made of platinum and a ceramic substrate material cermet made of platinum and a piezoelectric material
  • cermet made of platinum, a substrate material, and a piezoelectric material it is more preferable to use a material containing platinum as a main component.
  • the material of the second electrode film 4 is not restricted. It is possible to use one of the materials used as the first electrode film 2 , gold, chromium, copper or the like formed by sputtering, or gold or silver film using resinate material.
  • the piezoelectric/electrostrictive film 3 constituting the piezoelectric/electrostrictive operating portion 5 it is possible to use any material as long as the material shows an electric field induced strain such as a piezoelectric or electrostrictive effect.
  • the piezoelectric/electrostrictive material maybe either a crystalline material or an amorphous material, and may be a semi-conductor material or a dielectric, ferroelectric ceramic or anti-ferroelectric ceramic material.
  • the piezoelectric/electrostrictive material may either require a treatment for initial polarization or poling, or may not require such a polarization treatment.
  • piezoelectric/electrostrictive materials used for the present invention the following materials are specifically listed: a material whose main component is lead zirconate titanate (PZT), lead titanate, lead zirconate, lead magnesium niobate (PMN), lead nickel niobate (PNN), lead magnesium tungstate, lead manganese niobate, lead antimony stannate, lead zinc niobate, lead magnesium tantalate, lead nickel tantalate, and a composite material of the above materials.
  • PZT lead zirconate titanate
  • PMN lead magnesium niobate
  • PNN lead nickel niobate
  • lead magnesium tungstate lead manganese niobate
  • lead antimony stannate lead zinc niobate
  • lead magnesium tantalate lead nickel tantalate
  • lead nickel tantalate lead nickel tantalate
  • oxides of lanthanum, barium, niobium, zinc, cerium, cadmium, chromium, cobalt, antimony, iron, yttrium, tantalum, tungsten, nickel, manganese, lithium, strontium, magnesium, calcium, bismuth, tin, and a compound of these substances to above mentioned materials.
  • a PLZT-based material obtained by addition of the oxide of lanthanum to a PZT-based material.
  • a material whose main component is a mixture of lead magnesium niobate, lead zirconate, and lead titanate
  • a material whose main component is a mixture of lead nickel niobate, lead magnesium niobate, lead zirconate, and lead titanate
  • a material whose main component is the mixture of lead nickel tantalate, lead magnesium niobate, lead zirconate, and lead titanate
  • a material whose main component is a mixture of lead magnesium tantalate, lead magnesium niobate, lead zirconate, and lead titanate
  • a material whose main component is a mixture of lead magnesium tantalate, lead magnesium niobate, lead zirconate, and lead titanate.
  • a material whose main component is the mixture of lead magnesium niobate, lead zirconate, and lead titanate is preferably used. Because this material not only has a high piezoelectric constant but is also particularly less relative with a substrate material during heat treatment.
  • the piezoelectric/electrostrictive characteristics are changed depending on the composition of a component.
  • a ternary system material made of lead magnesium-niobate, lead zirconate, and lead titanate preferably used for a piezoelectric/electrostrictive element of the present invention
  • a composition nearby the phase boundary between pseudo-cubicphase, tetragonal phase, and rhombohedral phase is preferable.
  • a composition containing 15 to 50 mol % of lead magnesium niobate, 10 to 45 mol % of lead zirconate, and 30 to 45 mol % of lead titanate is preferably used because the composition has a high piezoelectric constant and a high electromechanical coupling factor.
  • a piezoelectric/electrostrictive element of the present invention is preferably used for various transducers for converting electrical energy into mechanical energy, that is, a mechanical displacement, force, or vibration, and vice versa, various actuators, frequency-region functional parts including filters, various indication devices including displays, transformers, sounding bodies including microphones and loudspeakers, vibrators, resonators, or oscillators for communication or motive power, discriminators, various sensors including ultrasonic sensors, acceleration sensors, angular velocity sensors, impact sensors, and mass sensors, gyros, and moreover a unimorph-type device and a bimorph-type device used for the servo shift device, pulse driven motor, ultrasonic motor, piezoelectric fan, and piezoelectric relay described in “From foundation to application of piezoelectric/electrostrictive actuator” written by K. Uchino, (Edited by NIPPON KOGYOGIJUTSU CENTER), (MORIKITA SHUPPAN)”, and more preferably used for various actuators,
  • a piezoelectric/electrostrictive element of the present invention can be used as a film-type capacitor device because it has not only the piezoelectric/electrostrictive characteristic but also dielectricity.
  • a piezoelectric/electrostrictive element of the present invention is described above on the basis of a unimorph structure constituting a piezoelectric/electrostrictive operating portion at only one side of a ceramic substrate. It is a matter of course that a piezoelectric/electrostrictive element of the present invention can be also applied to a bimorph structure constituting the piezoelectric/electrostrictive operating portion at both sides of the ceramic substrate. In this case, the surface layers are formed on both sides of the base layer.
  • a piezoelectric/electrostrictive element 7 shown in FIG. 3 ( b ) was manufactured in which a ceramic substrate was constituted with a base layer and a surface layer and had a cavity.
  • the base layer 10 was made of zirconium oxide which crystal phase was tetragonal phase obtained by addition of 3 mol % of yttrium oxide and the surface layer 9 was made of zirconium oxide obtained by addition of 7 mol % of yttrium oxide.
  • the value of a conditional expression is 0.90.
  • a piezoelectric/electrostrictive operating portion 5 was formed on the surface layer 9 .
  • a surface layer was formed on the surface of a green sheet for the base layer by using a paste material for the surface layer by means of screen printing.
  • the green sheet for the base layer and the surface layer were set so that the thickness of the base layer became 6 ⁇ m and that of the surface layer became 2 ⁇ m after they were fired.
  • a first electrode film 2 was made of platinum
  • a piezoelectric/electrostrictive film 3 was made of a material whose main component is a mixture of lead zirconate, lead titanate, and lead magnesium niobate
  • a second electrode film 4 was made of gold.
  • the piezoelectric/electrostrictive operating portion 5 was formed by means of screen printing.
  • the first electrode film 2 was fired at 1,300° C.
  • the piezoelectric/electrostrictive film 3 was fired at 1,250° C.
  • the second electrode film 4 was fired at 600° C.
  • the thickness of the first electrode film 2 was set to 3 ⁇ m
  • that of the piezoelectric/electrostrictive film 3 was set to 14 ⁇ m
  • that of the second electrode film 4 was set to 0.5 ⁇ m.
  • piezoelectric/electrostrictive elements 7 were manufactured to evaluate whether a crack occurred in a ceramic substrate 1 by using a crack-inspection penetrant. Table 1 shows a result of the evaluation.
  • Example 1 Zirconium oxide obtained by addition of 10 mol % of yttrium oxide to a surface layer 9 was used.
  • One thousand piezoelectric/electrostrictive elements were manufactured by the same manner as the case of Example 1 except that the value of a conditional expression was 1 to evaluate whether a crack occurred in a ceramic substrate 1 in the same manner as the case of Example 1.
  • Table 1 shows a result of the evaluation.
  • Example 1 Zirconium oxide obtained by addition of 6 mol % of yttrium oxide to a surface layer 9 was used.
  • One thousand piezoelectric/electrostrictive elements were manufactured by the same manner as the case of Example 1 except that the value of a conditional expression was 0.80 to evaluate whether a crack occurred in a ceramic substrate 1 in the same manner as the case of Example 1.
  • Table 1 shows a result of the evaluation.
  • a piezoelectric/electrostrictive element 7 shown in FIG. 1 ( b ) was manufactured in which a ceramic substrate was constituted with a single layer and had a cavity.
  • the ceramic substrate was made of zirconium oxide which crystal phase was tetragonal phase obtained by addition of 3 mol % of yttrium oxide.
  • a piezoelectric/electrostrictive operating portion 5 was formed on the surface of the ceramic substrate 1 at the opposite side to the side with which a support member 6 was connected.
  • An opening was formed on a green sheet for a supporting member in order to form a cavity of 0.2 mm ⁇ 4 mm and then, the green sheet for the supporting member and a green sheet for the ceramic substrate were superimposed on each other while applying heat and pressure, and fired at 1,500° C.
  • the thickness of a ceramic substrate after firing was set to 8 ⁇ m.
  • a piezoelectric/electrostrictive operating portion 5 was formed on the ceramic substrate.
  • the material and the thickness of each layer of the piezoelectric/electrostrictive operating portion 5 were the same as those of Example 1.
  • a ceramic substrate comprises a base layer and a surface layer and the surface layer of the ceramic substrate on which the piezoelectric/electrostrictive operating portion is formed is made of the material whose main component is zirconium oxide which crystal phase is mainly cubic phase Therefore, a crack does not easily occur in the ceramic substrate nearby the boundary of a first electrode film.
  • the base layer of the ceramic substrate is made of a material whose main component is zirconium oxide which crystal phase is a tetragonal phase or a mixed phase of tetragonal and cubic phase, tetragonal and monoclinic phase, or tetragonal, cubic, and monoclinic phase, it is possible to keep a high mechanical strength even with a small thickness. Therefore, it is possible to completely show the excellent characteristics in the function as a substrate (diaphragm) for a film type piezoelectric/electrostrictive element and provide a high performance piezoelectric/electrostrictive element.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Composite Materials (AREA)
  • Compositions Of Oxide Ceramics (AREA)
US09/276,580 1998-03-27 1999-03-25 Piezoelectric/electrostrictive element Expired - Lifetime US6246156B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP10-082328 1998-03-27
JP8232898 1998-03-27
JP10-087749 1998-03-31
JP8774998 1998-03-31

Publications (1)

Publication Number Publication Date
US6246156B1 true US6246156B1 (en) 2001-06-12

Family

ID=26423355

Family Applications (1)

Application Number Title Priority Date Filing Date
US09/276,580 Expired - Lifetime US6246156B1 (en) 1998-03-27 1999-03-25 Piezoelectric/electrostrictive element

Country Status (3)

Country Link
US (1) US6246156B1 (de)
EP (1) EP0949693B1 (de)
DE (1) DE69909546T2 (de)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030175062A1 (en) * 2002-03-05 2003-09-18 Ngk Insulators, Ltd. Piezoelectric/electrostrictive device
US20040173823A1 (en) * 1998-10-14 2004-09-09 Masami Murai Method for manufacturing ferroelectric thin film device, ink jet recording head and ink jet printer
US20070066897A1 (en) * 2005-07-13 2007-03-22 Sekins K M Systems and methods for performing acoustic hemostasis of deep bleeding trauma in limbs
US20080225428A1 (en) * 2007-03-14 2008-09-18 Fujitsu Limited Storage device, control device, and vibration-detection method
US20110172528A1 (en) * 2009-10-12 2011-07-14 Michael Gertner Systems and methods for treatment using ultrasonic energy
US8137274B2 (en) 1999-10-25 2012-03-20 Kona Medical, Inc. Methods to deliver high intensity focused ultrasound to target regions proximate blood vessels
US8167805B2 (en) 2005-10-20 2012-05-01 Kona Medical, Inc. Systems and methods for ultrasound applicator station keeping
US8295912B2 (en) 2009-10-12 2012-10-23 Kona Medical, Inc. Method and system to inhibit a function of a nerve traveling with an artery
US8374674B2 (en) 2009-10-12 2013-02-12 Kona Medical, Inc. Nerve treatment system
US8469904B2 (en) 2009-10-12 2013-06-25 Kona Medical, Inc. Energetic modulation of nerves
US8517962B2 (en) 2009-10-12 2013-08-27 Kona Medical, Inc. Energetic modulation of nerves
US8622937B2 (en) 1999-11-26 2014-01-07 Kona Medical, Inc. Controlled high efficiency lesion formation using high intensity ultrasound
US8986231B2 (en) 2009-10-12 2015-03-24 Kona Medical, Inc. Energetic modulation of nerves
US8986211B2 (en) 2009-10-12 2015-03-24 Kona Medical, Inc. Energetic modulation of nerves
US8992447B2 (en) 2009-10-12 2015-03-31 Kona Medical, Inc. Energetic modulation of nerves
US9005143B2 (en) 2009-10-12 2015-04-14 Kona Medical, Inc. External autonomic modulation
CN110403288A (zh) * 2019-07-10 2019-11-05 林爱迪 一种安全气囊头盔及其专用头盔加速计
US10772681B2 (en) 2009-10-12 2020-09-15 Utsuka Medical Devices Co., Ltd. Energy delivery to intraparenchymal regions of the kidney
US10925579B2 (en) 2014-11-05 2021-02-23 Otsuka Medical Devices Co., Ltd. Systems and methods for real-time tracking of a target tissue using imaging before and during therapy delivery
US11998266B2 (en) 2021-09-27 2024-06-04 Otsuka Medical Devices Co., Ltd Intravascular energy delivery

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3783534B2 (ja) * 2000-08-18 2006-06-07 株式会社村田製作所 圧電磁器焼結体および圧電磁器素子
DE102005043036B4 (de) * 2005-09-09 2011-03-24 Siemens Ag Vorrichtung zur Ermittlung der viskosen Eigenschaften einer Flüssigkeit
CN101774812B (zh) * 2010-02-02 2012-05-09 天津大学 溶胶凝胶技术制备钽酸镁微波陶瓷粉体的方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03128681A (ja) 1989-07-11 1991-05-31 Ngk Insulators Ltd 圧電／電歪膜型アクチュエータ
US5126615A (en) * 1990-05-01 1992-06-30 Ngk Insulators, Ltd. Piezoelectric/electrostrictive actuator having at least one piezoelectric/electrostrictive film
EP0526048A1 (de) 1991-07-18 1993-02-03 Ngk Insulators, Ltd. Piezoelektrischer/elektrostriktiver Element mit einem keramischen Substrat aus stabilisiertem Zirkoniumdioxid
JPH0529675A (ja) 1991-07-18 1993-02-05 Ngk Insulators Ltd 圧電／電歪膜型素子
JPH0549270A (ja) 1990-07-26 1993-02-26 Ngk Insulators Ltd 圧電／電歪アクチユエータ
JPH0597437A (ja) 1991-10-03 1993-04-20 Ngk Insulators Ltd 圧電／電歪膜型素子
US5210455A (en) * 1990-07-26 1993-05-11 Ngk Insulators, Ltd. Piezoelectric/electrostrictive actuator having ceramic substrate having recess defining thin-walled portion
JPH05270912A (ja) 1992-03-21 1993-10-19 Ngk Insulators Ltd 圧電／電歪膜型素子
EP0671772A1 (de) 1994-02-14 1995-09-13 Ngk Insulators, Ltd. Membranstruktur aus Keramik mit einem konvexen Teil und Verfahren zu ihrer Herstellung
JP3128681B2 (ja) 1994-07-08 2001-01-29 新日本製鐵株式会社 可動モールド式連続鋳造機のモールド用コーティング剤

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03128681A (ja) 1989-07-11 1991-05-31 Ngk Insulators Ltd 圧電／電歪膜型アクチュエータ
US5126615A (en) * 1990-05-01 1992-06-30 Ngk Insulators, Ltd. Piezoelectric/electrostrictive actuator having at least one piezoelectric/electrostrictive film
JPH0549270A (ja) 1990-07-26 1993-02-26 Ngk Insulators Ltd 圧電／電歪アクチユエータ
US5210455A (en) * 1990-07-26 1993-05-11 Ngk Insulators, Ltd. Piezoelectric/electrostrictive actuator having ceramic substrate having recess defining thin-walled portion
EP0526048A1 (de) 1991-07-18 1993-02-03 Ngk Insulators, Ltd. Piezoelektrischer/elektrostriktiver Element mit einem keramischen Substrat aus stabilisiertem Zirkoniumdioxid
JPH0529675A (ja) 1991-07-18 1993-02-05 Ngk Insulators Ltd 圧電／電歪膜型素子
US5430344A (en) * 1991-07-18 1995-07-04 Ngk Insulators, Ltd. Piezoelectric/electrostrictive element having ceramic substrate formed essentially of stabilized zirconia
JPH0597437A (ja) 1991-10-03 1993-04-20 Ngk Insulators Ltd 圧電／電歪膜型素子
JPH05270912A (ja) 1992-03-21 1993-10-19 Ngk Insulators Ltd 圧電／電歪膜型素子
EP0671772A1 (de) 1994-02-14 1995-09-13 Ngk Insulators, Ltd. Membranstruktur aus Keramik mit einem konvexen Teil und Verfahren zu ihrer Herstellung
JP3128681B2 (ja) 1994-07-08 2001-01-29 新日本製鐵株式会社 可動モールド式連続鋳造機のモールド用コーティング剤

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Article entitled "Form foundation up to application Piezoelectric/Electrostrictive Actuator" written by Kenji Uchino edited by Japan Industrial Technique Center and published by Morikita Shuppan p. 177-178.

Cited By (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040173823A1 (en) * 1998-10-14 2004-09-09 Masami Murai Method for manufacturing ferroelectric thin film device, ink jet recording head and ink jet printer
US6955927B2 (en) * 1998-10-14 2005-10-18 Seiko Epson Corporation Method for manufacturing ferroelectric thin film device, ink jet recording head and ink jet printer
US8277398B2 (en) 1999-10-25 2012-10-02 Kona Medical, Inc. Methods and devices to target vascular targets with high intensity focused ultrasound
US8388535B2 (en) 1999-10-25 2013-03-05 Kona Medical, Inc. Methods and apparatus for focused ultrasound application
US8137274B2 (en) 1999-10-25 2012-03-20 Kona Medical, Inc. Methods to deliver high intensity focused ultrasound to target regions proximate blood vessels
US8622937B2 (en) 1999-11-26 2014-01-07 Kona Medical, Inc. Controlled high efficiency lesion formation using high intensity ultrasound
US6882089B2 (en) * 2002-03-05 2005-04-19 Ngk Insulators, Ltd. Piezoelectric/electrostrictive device
US20030175062A1 (en) * 2002-03-05 2003-09-18 Ngk Insulators, Ltd. Piezoelectric/electrostrictive device
US20070066897A1 (en) * 2005-07-13 2007-03-22 Sekins K M Systems and methods for performing acoustic hemostasis of deep bleeding trauma in limbs
US9220488B2 (en) 2005-10-20 2015-12-29 Kona Medical, Inc. System and method for treating a therapeutic site
US8167805B2 (en) 2005-10-20 2012-05-01 Kona Medical, Inc. Systems and methods for ultrasound applicator station keeping
US8372009B2 (en) 2005-10-20 2013-02-12 Kona Medical, Inc. System and method for treating a therapeutic site
US7679856B2 (en) * 2007-03-14 2010-03-16 Toshiba Storage Device Corporation Storage device, control device, and vibration-detection method
US20080225428A1 (en) * 2007-03-14 2008-09-18 Fujitsu Limited Storage device, control device, and vibration-detection method
US9005143B2 (en) 2009-10-12 2015-04-14 Kona Medical, Inc. External autonomic modulation
US9125642B2 (en) 2009-10-12 2015-09-08 Kona Medical, Inc. External autonomic modulation
US8512262B2 (en) 2009-10-12 2013-08-20 Kona Medical, Inc. Energetic modulation of nerves
US8517962B2 (en) 2009-10-12 2013-08-27 Kona Medical, Inc. Energetic modulation of nerves
US8556834B2 (en) 2009-10-12 2013-10-15 Kona Medical, Inc. Flow directed heating of nervous structures
US20110172528A1 (en) * 2009-10-12 2011-07-14 Michael Gertner Systems and methods for treatment using ultrasonic energy
US8715209B2 (en) 2009-10-12 2014-05-06 Kona Medical, Inc. Methods and devices to modulate the autonomic nervous system with ultrasound
US8986231B2 (en) 2009-10-12 2015-03-24 Kona Medical, Inc. Energetic modulation of nerves
US8986211B2 (en) 2009-10-12 2015-03-24 Kona Medical, Inc. Energetic modulation of nerves
US8992447B2 (en) 2009-10-12 2015-03-31 Kona Medical, Inc. Energetic modulation of nerves
US8374674B2 (en) 2009-10-12 2013-02-12 Kona Medical, Inc. Nerve treatment system
US9119952B2 (en) 2009-10-12 2015-09-01 Kona Medical, Inc. Methods and devices to modulate the autonomic nervous system via the carotid body or carotid sinus
US9119951B2 (en) 2009-10-12 2015-09-01 Kona Medical, Inc. Energetic modulation of nerves
US8469904B2 (en) 2009-10-12 2013-06-25 Kona Medical, Inc. Energetic modulation of nerves
US9174065B2 (en) 2009-10-12 2015-11-03 Kona Medical, Inc. Energetic modulation of nerves
US9199097B2 (en) 2009-10-12 2015-12-01 Kona Medical, Inc. Energetic modulation of nerves
US8295912B2 (en) 2009-10-12 2012-10-23 Kona Medical, Inc. Method and system to inhibit a function of a nerve traveling with an artery
US9352171B2 (en) 2009-10-12 2016-05-31 Kona Medical, Inc. Nerve treatment system
US9358401B2 (en) 2009-10-12 2016-06-07 Kona Medical, Inc. Intravascular catheter to deliver unfocused energy to nerves surrounding a blood vessel
US9579518B2 (en) 2009-10-12 2017-02-28 Kona Medical, Inc. Nerve treatment system
US11154356B2 (en) 2009-10-12 2021-10-26 Otsuka Medical Devices Co., Ltd. Intravascular energy delivery
US10772681B2 (en) 2009-10-12 2020-09-15 Utsuka Medical Devices Co., Ltd. Energy delivery to intraparenchymal regions of the kidney
US10925579B2 (en) 2014-11-05 2021-02-23 Otsuka Medical Devices Co., Ltd. Systems and methods for real-time tracking of a target tissue using imaging before and during therapy delivery
CN110403288A (zh) * 2019-07-10 2019-11-05 林爱迪 一种安全气囊头盔及其专用头盔加速计
CN110403288B (zh) * 2019-07-10 2022-09-23 林爱迪 一种安全气囊头盔及其专用头盔加速计
US11998266B2 (en) 2021-09-27 2024-06-04 Otsuka Medical Devices Co., Ltd Intravascular energy delivery

Also Published As

Publication number Publication date
EP0949693B1 (de) 2003-07-16
DE69909546D1 (de) 2003-08-21
DE69909546T2 (de) 2004-06-09
EP0949693A1 (de) 1999-10-13

Similar Documents

Publication Publication Date Title
US6246156B1 (en) Piezoelectric/electrostrictive element
US6263552B1 (en) Method of producing piezoelectric/electrostrictive film-type element
US6049158A (en) Piezoelectric/electrostrictive film element having convex diaphragm portions and method of producing the same
EP0526048B1 (de) Piezoelektrischer/elektrostriktiver Element mit einem keramischen Substrat aus stabilisiertem Zirkoniumdioxid
US5852337A (en) Piezoelectric film-type element
EP0718900B1 (de) Piezoelektrisches/elektrostriktives Dünnfilmelement mit einem Membran mit mindestens einem spannungsaufnemenden Gebiet am Rande
US6518690B2 (en) Piezoelectric/electrostrictive film type elements and process for producing the same
EP0667646B1 (de) Piezoelektrisches/elektrostriktives Dünnfilmelement und Herstellungsverfahren
EP0656665B1 (de) Piezoelektrische Anordnung
US6584660B1 (en) Method of manufacturing a piezoelectric device
EP0766325B1 (de) Piezoeletrisches/elektrostriktives Dünnfilmelement und Herstellungsverfahren
EP0615295B1 (de) Piezoelektrisches/elektrostriktives Element mit Elektrodenfilmen mit einer bestimmten Oberflächenrauhigkeit
US7441317B2 (en) Piezoelectric/electrostrictive device and method for manufacturing the same
EP0561616A2 (de) Piezoelektrisches/elektrostriktives Element mit Hilfselektrode zwischen einer piezoelektrischen/elektrostriktiven Schicht und dem Substrat
US20060038464A1 (en) Piezoelectric/electrostrictive device and method of manufacturing same
US7069630B2 (en) Method of manufacturing a piezoelectric/electrostrictive device
JP3282085B2 (ja) 圧電／電歪膜型素子の製造方法
JP3999473B2 (ja) 耐久性に優れた一体型圧電／電歪膜型素子およびその製造方法
JPH0851241A (ja) 圧電／電歪膜型素子及びその製造方法
JPH07131086A (ja) 圧電膜型素子及びその処理方法並びにその駆動方法
JP3480561B2 (ja) 圧電／電歪素子

Legal Events

Date Code Title Description
AS Assignment

Owner name: NGK INSULATORS, LTD., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:TAKEUCHI, YUKIHISA;KIMURA, KOJI;REEL/FRAME:011376/0911

Effective date: 19990318

STCF Information on status: patent grant

Free format text: PATENTED CASE

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12