US5828141A - Apparatus for switching an inductive load - Google Patents

Apparatus for switching an inductive load Download PDF

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Publication number
US5828141A
US5828141A US08/887,470 US88747097A US5828141A US 5828141 A US5828141 A US 5828141A US 88747097 A US88747097 A US 88747097A US 5828141 A US5828141 A US 5828141A
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Prior art keywords
resistor
voltage source
negative pole
gate
operating voltage
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Expired - Fee Related
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US08/887,470
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English (en)
Inventor
Ralf Foerster
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Siemens AG
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Siemens AG
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Assigned to SIEMENS AKTIENGESELLSCHAFT reassignment SIEMENS AKTIENGESELLSCHAFT ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FOERSTER, RALF
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state

Definitions

  • the invention relates to an apparatus for switching an inductive load with a MOSFET switch and with limiting of a voltage across the load.
  • an apparatus for switching an inductive load in particular a fuel injection valve of an internal combustion engine, comprising an operating voltage source having a positive pole and a negative pole; a first series circuit including a load to be switched and an electronic low-side MOSFET switch having a gate and a drain, the first series circuit connected between the positive pole and the negative pole of the operating voltage source; a second series circuit including a control switch and a control voltage source, the second series circuit connected between the gate of the MOSFET switch and the negative pole of the operating voltage source, the control voltage source having a negative pole connected to the negative pole of the operating voltage source; a first resistor connected parallel to the control switch; and a clamping circuit including a second resistor having one terminal connected to the gate of the MOSFET switch and having another terminal; a pnp transistor having an emitter connected to the other terminal of the second resistor, having a collector connected to the negative pole of the operating voltage source and having a base;
  • an apparatus for switching an inductive load comprising an operating voltage source having a positive pole and a negative pole; a first series circuit including a load to be switched and an electronic low-side MOSFET switch having a gate, the first series circuit connected between the positive pole and the negative pole of the operating voltage source; a first resistor connected between the gate of the MOSFET switch and the negative pole of the operating voltage source; a second series circuit including a control switch and a control voltage source, the second series circuit connected in parallel with the first resistor, the control voltage source having a negative pole connected to the negative pole of the operating voltage source; a third series circuit including a freewheeling diode and a further MOSFET switch having a gate and a source, the third series circuit connected in parallel with the load; a second resistor connected to the gate of the further MOSFET switch; a further voltage source having a negative pole connected to the source of the further MOSFET switch and to
  • a further clamping circuit connected in parallel with the first-mentioned clamping circuit, the further clamping circuit including a fifth resistor having one terminal connected to the gate of the further MOSFET switch and having another terminal; another pnp transistor having an emitter connected to the other terminal of the fifth resistor, having a collector connected to the positive pole of the operating voltage source and having a base; another constant-current source connected to the negative pole of the operating voltage source; another switch connected between the other constant-current source and the base of the other pnp transistor; and a fifth series circuit including a sixth resistor having one terminal connected to the load and another terminal, and a blocking diode connected between the other terminal of the sixth resistor and the base of the pnp transistor.
  • a blocking diode forward-biased from the base of the other pnp transistor to the gate of the further MOSFET switch.
  • FIG. 1 is a schematic circuit diagram of a known apparatus for switching an inductive load
  • FIG. 2 is a circuit diagram of a first exemplary embodiment of an apparatus according to the invention.
  • FIG. 3 is a circuit diagram of a second exemplary embodiment of an apparatus according to the invention.
  • control and MOSFET switches which are described and illustrated therein may also be IGBT or bipolar Darlington transistors, for example. These and illustrated pnp transistor switches in each case can be replaced by individual transistors or by transistor combinations.
  • FIG. 1 there is seen a known circuit in which a series connection of an inductive load L and a low-side MOSFET switch M is connected to poles +Vbat and GND of an operating voltage source Vbat.
  • the MOSFET switch M has a drain d connected to the load and a source s connected to the negative pole GND.
  • a resistor R is usually connected between a gate g of the MOSFET switch M and the negative pole GND.
  • a control voltage source Vc which is connected in parallel with the resistor R has a positive pole +Vc that is connected through a control switch s to the gate g.
  • a negative pole -Vc of the control voltage source Vc is connected to the negative pole GND of the operating voltage source Vbat.
  • a zener diode ZD which is reverse-biased toward the gate g is connected in series with a blocking diode D which is forward-biased toward the gate g, between the drain d and the gate g.
  • the blocking diode D prevents a flow of current from the gate g to the drain d, which is at low potential in that case.
  • control switch S In the switched-off state of the circuit, the control switch S is open and the MOSFET switch M is thus in the off state or high-impedance state and no current flows.
  • the control switch S In order to switch the load on, the control switch S is closed and the MOSFET switch M is thus turned on. An increasing current flows from the positive pole +Vbat through the load L and the MOSFET switch M to the negative pole GND. The load is switched on.
  • the switch S is opened and the gate g of the MOSFET switch M is discharged through the resistor R.
  • the potential at the drain d rises until a current flows through the diodes ZD and D, when the zener voltage of the zener diode ZD is reached.
  • the gate g is recharged through the use of the current through the diodes ZD and D. As a result, a constant drain potential is established until the coil L is demagnetized.
  • FIG. 2 shows a first diagrammatic exemplary embodiment of a switching apparatus according to the invention, in which the operating voltage source Vbat, the load L, the MOSFET switch M, the control voltage source Vc and the control switch S1 are connected in the manner already described for FIG. 1.
  • a first resistor R5 is connected in parallel with the control switch S1.
  • a clamping circuit K is provided instead of the zener diode ZD.
  • This clamping circuit includes a second resistor R1 having one terminal which is connected to the gate g of the MOSFET switch M, a pnp transistor T having an emitter e that is connected to another terminal of the second resistor R1 and a collector c which is connected to the negative pole GND of the operating voltage source Vbat, a constant-current source Q which on one hand is connected to the negative pole GND and on the other hand is connected through a further switch S2 to a base b of the pnp transistor T, and a third resistor R2 which on one hand is connected to the base b of the pnp transistor T and on the other hand is connected to the drain d of the MOSFET switch M.
  • the switches S1 and S2 are open and the operating voltage source Vbat and the control voltage source Vc can be isolated in a non-illustrated manner from the circuit and are connected to it at least during operation.
  • control switch S1 In order to switch the load on, the control switch S1 is closed and the MOSFET switch M is thus turned on. An increasing current flows from the positive pole +Vbat through the load L and the MOSFET switch M to the negative pole GND. The load is switched on.
  • the switch S1 In order to switch the load L off, the switch S1 is opened and the switch S2 is simultaneously closed. A current I1 flows through the constant-current source Q from the gate g through the resistor R1 and the emitter-base junction of the pnp transistor T to the negative pole GND. That current turns the transistor T on, as a result of which the gate g of the MOSFET switch M is discharged. The drain potential rises, and an increasing part of the current I1 flows from the drain d through the third resistor R2 into the constant-current source Q. When the drain potential has reached a value at which the entire current I1 flows through the resistor R2, the transistor T is again turned off and the discharging of the gate g is interrupted.
  • the gate g is slightly recharged through the resistor R5.
  • the gate discharge rate can be determined by the value of the resistor R1.
  • the desired clamping voltage Uk which corresponds to the zener voltage of the circuit according to FIG. 1, can be set by the value of the resistor R2 and of the current I1.
  • This circuit can also be readily integrated for large clamping voltages, with the exception of the third resistor R2, in an IC of customary technology.
  • FIG. 3 illustrates a further diagrammatic exemplary embodiment of a switching apparatus according to the invention in which chopper operation is also possible.
  • a first series circuit which is disposed in this circuit is formed by a load L and an electronic low-side MOSFET switch M1 and is connected between the positive pole +Vbat and the negative pole GND of the operating voltage source Vbat.
  • a fourth resistor R6 is connected between a gate g1 of the MOSFET switch M1 and the negative pole GND of the operating voltage source Vbat.
  • a second series circuit formed by a control switch S1 and a control voltage source Vc is connected in parallel with the fourth resistor R6.
  • a negative pole -Vc of the control voltage source Vc is connected to the negative pole GND of the operating voltage source Vbat.
  • a third series circuit formed by a freewheeling diode Di and a further MOSFET switch M2 is connected in parallel with the load L.
  • a further voltage source Vk has a negative pole -Vk connected to a source s2 of the further MOSFET switch M2 and to the positive pole +Vbat of the operating voltage source Vbat.
  • the further voltage source Vk has a positive pole +Vk connected through a first resistor R5 to a gate g2 of the further MOSFET switch M2.
  • the circuit firstly has a clamping circuit K1 with a second resistor R1 having one terminal which is connected to the gate g2 of the further MOSFET switch M2. Furthermore, a pnp transistor T1 is provided having an emitter e1 that is connected to another terminal of the second resistor R1 and a collector c1 which is connected to the positive pole +Vbat of the operating voltage source Vbat.
  • a constant-current source Q1 is set to a constant current I1 that is sufficient for complete opening of the pnp transistor T1 and brings about a desired clamping voltage Uk1.
  • the constant-current source Q1 is connected to the negative pole GND of the operating voltage source Vbat and on the other hand it is connected through a switch S2 to a base b1 of the pnp transistor T1.
  • a fourth series circuit formed by a third resistor R2 and a blocking diode D2 is connected between the load L and the base of the pnp transistor T1.
  • a further clamping circuit K2 which is connected in parallel with the clamping circuit K1 has a fifth resistor R3 with one terminal that is connected to the gate g2 of the further MOSFET switch M2.
  • a pnp transistor T2 is provided with an emitter e2 that is connected to another terminal of the fifth resistor R3 and a collector c2 which is connected to the positive pole +Vbat of the operating voltage source Vbat.
  • a constant-current source Q2 is set to a constant current I2 that is sufficient for complete opening of the pnp transistor T2 and brings about a desired clamping voltage Uk2 ⁇ Uk1.
  • the constant-current source Q2 is connected to the negative pole GND of the operating voltage source Vbat and on the other hand it is connected through a switch S3 to the base b2 of the pnp transistor T2.
  • a fifth series circuit formed by a sixth resistor R4 and a blocking diode D4 is connected between the load L and the base b2 of the pnp transistor T2.
  • the resistors in FIG. 3 have been identified above with the same reference symbols as in FIG. 2 for ease of comprehension. However, when viewing the embodiment of FIG. 3 alone, the first resistor is R6, the second resistor is R5, the third resistor is R1 and the fourth resistor is R2.
  • the control switch S1 In order to switch the load on, the control switch S1 is closed and the MOSFET switch M1 is thus turned on. An increasing current flows from the positive pole +Vbat through the load L and the MOSFET switch M1 to the negative pole GND.
  • the load is switched on.
  • the load L In the switched-on state, the load L can be recharged (chopper operation), for example by chopped operation of the switch S1 at a specific duty ratio or cycle, in order to maintain a specific load current.
  • the freewheeling circuit (the freewheeling diode D1 and the MOSFET switch M2) accepts the current through the load L.
  • the demagnetization time of an inductive load is determined by the voltage across it. In the circuits according to FIGS. 1 and 2, this voltage is dependent not only on the zener voltage and the clamping voltage, respectively, but also on the operating voltage Vbat.
  • the second resistor R1 between the gate g of the MOSFET switch M and the emitter e of the pnp transistor T must not be selected to be too small.
  • the MOSFET switch M2 opens slowly and after a long dead time and that the demagnetization time of the load cannot be as small as desired.
  • the gate g2 of the MOSFET switch M2 can be discharged more rapidly and the demagnetization of the load can be accelerated without an excessively large overshoot.
  • the switch S1 In order to demagnetize the load L, the switch S1 is opened. The switches S2 and S3 are simultaneously closed. As a result, a current I1 flows from the gate g2 through elements R1-e1-b1-Q1 to GND, and a current I2 flows from the gate g2 through elements R3-e2-b2-Q2 to GND, and through the operating voltage source Vbat to the negative pole -Vk. A correspondingly amplified current I1*v1 flows through elements R1-e1-c1, and a correspondingly amplified current I2*v2 flows through elements R3-e2-c2, to the negative pole -Vk, as a result of which the gate g2 of the MOSFET switch M2 is discharged. As a result, the potential at the drain d2 rises until the clamping voltage Uk2 is reached and the entire current I2 flows through the resistor R4 and the pnp transistor T2 is turned off.
  • the gate g2 is only depleted with a current I1*v1 until the load is demagnetized, as a result of which a large overshoot is reliably avoided.

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US08/887,470 1996-07-02 1997-07-02 Apparatus for switching an inductive load Expired - Fee Related US5828141A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19626630A DE19626630C1 (de) 1996-07-02 1996-07-02 Vorrichtung zum Schalten eines induktiven Verbrauchers
DE19626630.0 1996-07-02

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US5828141A true US5828141A (en) 1998-10-27

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US (1) US5828141A (de)
EP (1) EP0817380B1 (de)
KR (1) KR100438457B1 (de)
DE (2) DE19626630C1 (de)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5909135A (en) * 1996-12-19 1999-06-01 Texas Instruments Incorporated High-side MOSFET gate protection shunt circuit
US6078204A (en) * 1996-12-19 2000-06-20 Texas Instruments Incorporated High current drain-to-gate clamp/gate-to-source clamp for external power MOS transistors
US20040051160A1 (en) * 2001-02-15 2004-03-18 Hitachi, Ltd. Semiconductor device
WO2005091502A1 (de) * 2004-03-19 2005-09-29 Robert Bosch Gmbh Ansteuerschaltung zum ansteuern einer leistungselektronischen schaltung sowie verfahren hierzu
US20080030256A1 (en) * 2006-08-03 2008-02-07 Infineon Technologies Ag Switching apparatus and method for detecting an operating state
US20100039160A1 (en) * 2008-08-12 2010-02-18 Nikolay Ilkov Switch
US20100201407A1 (en) * 2009-02-06 2010-08-12 Continental Automotive Gmbh Driver chip for driving an inductive load and module having a driver chip
CN102545852A (zh) * 2012-01-17 2012-07-04 南京航空航天大学 应用于固态功率控制器的泄漏钳位电路及其控制方法
CN103324096A (zh) * 2012-03-22 2013-09-25 富士通天株式会社 传感器信号处理装置、以及车载型电子控制装置
CN110249528A (zh) * 2017-02-13 2019-09-17 罗伯特·博世有限公司 用于提高电感负载的空载电压的电路装置以及输出级

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10117356B4 (de) * 2001-04-07 2006-09-07 Robert Bosch Gmbh Schaltungsanordnung
DE102008033138A1 (de) * 2008-07-15 2010-01-21 Continental Automotive Gmbh Schaltungsanordnung zum Schalten einer induktiven Last

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3109650A1 (de) * 1981-03-13 1982-09-23 Robert Bosch Gmbh, 7000 Stuttgart "aus einer induktiven last und der anoden-kathoden-strecke eines selbstsperrenden feldeffekttransistors bestehende serienschaltung"
EP0072523A2 (de) * 1981-08-14 1983-02-23 Siemens Aktiengesellschaft Schutzschaltung für einen Feldeffekttransistor in einem Laststromkreis
US5266840A (en) * 1988-10-25 1993-11-30 Siemens Aktiengesellschaft Circuit for detecting the failure of a load which is connected in series with an electronic switch
US5272399A (en) * 1992-02-25 1993-12-21 Siemens Aktiengesellschaft Circuit limiting the load current of a power MOSFET
US5672917A (en) * 1994-09-27 1997-09-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor power switch system
US5744878A (en) * 1996-03-08 1998-04-28 Siemens Aktiengesellschaft Circuit configuration for triggering a field effect transistor with a source-side load

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4893211A (en) * 1985-04-01 1990-01-09 Motorola, Inc. Method and circuit for providing adjustable control of short circuit current through a semiconductor device
ES2101148T3 (es) * 1992-03-10 1997-07-01 Siemens Ag Circuito de proteccion para un mosfet de potencia, que acciona una carga inductiva.

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3109650A1 (de) * 1981-03-13 1982-09-23 Robert Bosch Gmbh, 7000 Stuttgart "aus einer induktiven last und der anoden-kathoden-strecke eines selbstsperrenden feldeffekttransistors bestehende serienschaltung"
EP0072523A2 (de) * 1981-08-14 1983-02-23 Siemens Aktiengesellschaft Schutzschaltung für einen Feldeffekttransistor in einem Laststromkreis
US5266840A (en) * 1988-10-25 1993-11-30 Siemens Aktiengesellschaft Circuit for detecting the failure of a load which is connected in series with an electronic switch
US5272399A (en) * 1992-02-25 1993-12-21 Siemens Aktiengesellschaft Circuit limiting the load current of a power MOSFET
US5672917A (en) * 1994-09-27 1997-09-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor power switch system
US5744878A (en) * 1996-03-08 1998-04-28 Siemens Aktiengesellschaft Circuit configuration for triggering a field effect transistor with a source-side load

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6078204A (en) * 1996-12-19 2000-06-20 Texas Instruments Incorporated High current drain-to-gate clamp/gate-to-source clamp for external power MOS transistors
US5909135A (en) * 1996-12-19 1999-06-01 Texas Instruments Incorporated High-side MOSFET gate protection shunt circuit
US20040051160A1 (en) * 2001-02-15 2004-03-18 Hitachi, Ltd. Semiconductor device
US7161264B2 (en) * 2001-02-15 2007-01-09 Hitachi, Ltd. Semiconductor circuit having drivers of different withstand voltage within the same chip
WO2005091502A1 (de) * 2004-03-19 2005-09-29 Robert Bosch Gmbh Ansteuerschaltung zum ansteuern einer leistungselektronischen schaltung sowie verfahren hierzu
US20080001586A1 (en) * 2004-03-19 2008-01-03 Jochen Kuehner Control Circuit for Controlling an Electronic Circuit and Method for This
US7459954B2 (en) 2004-03-19 2008-12-02 Robert Bosch Gmbh Control circuit for controlling an electronic circuit and method for this
US7821319B2 (en) * 2006-08-03 2010-10-26 Infineon Technologies Ag Switching apparatus and method for detecting an operating state
US20080030256A1 (en) * 2006-08-03 2008-02-07 Infineon Technologies Ag Switching apparatus and method for detecting an operating state
US20100039160A1 (en) * 2008-08-12 2010-02-18 Nikolay Ilkov Switch
US7868683B2 (en) * 2008-08-12 2011-01-11 Infineon Technologies Ag Switch using an accelerating element
DE102009007790B3 (de) * 2009-02-06 2010-08-12 Continental Automotive Gmbh Treiberchip zum Treiben einer induktiven Last
US20100201407A1 (en) * 2009-02-06 2010-08-12 Continental Automotive Gmbh Driver chip for driving an inductive load and module having a driver chip
US8217686B2 (en) 2009-02-06 2012-07-10 Continental Automotive Gmbh Driver chip for driving an inductive load and module having a driver chip
CN102545852A (zh) * 2012-01-17 2012-07-04 南京航空航天大学 应用于固态功率控制器的泄漏钳位电路及其控制方法
CN102545852B (zh) * 2012-01-17 2013-12-18 南京航空航天大学 应用于固态功率控制器的泄漏钳位电路及其控制方法
CN103324096A (zh) * 2012-03-22 2013-09-25 富士通天株式会社 传感器信号处理装置、以及车载型电子控制装置
CN103324096B (zh) * 2012-03-22 2016-04-20 富士通天株式会社 传感器信号处理装置、以及车载型电子控制装置
CN110249528A (zh) * 2017-02-13 2019-09-17 罗伯特·博世有限公司 用于提高电感负载的空载电压的电路装置以及输出级

Also Published As

Publication number Publication date
KR100438457B1 (ko) 2004-07-16
DE59710603D1 (de) 2003-09-25
EP0817380A2 (de) 1998-01-07
EP0817380A3 (de) 1999-07-28
KR980012894A (ko) 1998-04-30
DE19626630C1 (de) 1997-09-11
EP0817380B1 (de) 2003-08-20

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