EP0757441B1 - Integrierte Schaltung zur Spannungsbegrenzung - Google Patents

Integrierte Schaltung zur Spannungsbegrenzung Download PDF

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Publication number
EP0757441B1
EP0757441B1 EP95830345A EP95830345A EP0757441B1 EP 0757441 B1 EP0757441 B1 EP 0757441B1 EP 95830345 A EP95830345 A EP 95830345A EP 95830345 A EP95830345 A EP 95830345A EP 0757441 B1 EP0757441 B1 EP 0757441B1
Authority
EP
European Patent Office
Prior art keywords
terminal
circuit
voltage
transistor
accordance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP95830345A
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English (en)
French (fr)
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EP0757441A1 (de
Inventor
Sergio Palara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, SGS Thomson Microelectronics SRL filed Critical STMicroelectronics SRL
Priority to EP95830345A priority Critical patent/EP0757441B1/de
Priority to DE69527201T priority patent/DE69527201D1/de
Priority to US08/644,519 priority patent/US5818120A/en
Publication of EP0757441A1 publication Critical patent/EP0757441A1/de
Application granted granted Critical
Publication of EP0757441B1 publication Critical patent/EP0757441B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0826—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in bipolar transistor switches
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
    • F02P3/00—Other installations
    • F02P3/02—Other installations having inductive energy storage, e.g. arrangements of induction coils
    • F02P3/04—Layout of circuits
    • F02P3/055—Layout of circuits with protective means to prevent damage to the circuit, e.g. semiconductor devices or the ignition coil
    • F02P3/0552—Opening or closing the primary coil circuit with semiconductor devices

Definitions

  • the present invention relates to an integrated electronic voltage limiting circuit of suitable voltage and especially to protect against overvoltage a switch placed in series with an electrical load connected to a power supply line.
  • the field of application of the present invention concerns the automobile industry and specifically the field of electronic ignition with discrete components.
  • bipolar transistors are used as switches for supply electrical loads in switching with even very high currents.
  • opening of the switch i.e. the sudden change from a conduction state to an interdiction state of the transistor causes a transient overvoltage condition at its ends.
  • This overvoltage can even be several times greater than the supply voltage and can reach values and durations such as to exceed the safety limits set by the structural characteristics of the transistor and even destroy it.
  • a first technical solution of the prior art to obviate this shortcoming calls for the use of a voltage limiting circuit comprising a type NPN Darlington couple (T1,T2) whose drive transistor is indicated by T1 and at whose ends is present a voltage Vs to be limited as shown in FIG. 1.
  • This voltage limiting circuit also comprises a Zener diode Z1 having an anode terminal connected to a base terminal of the transistor T1 and a cathode terminal connected to an intermediate node A of a resistive divider (R1,R2) at whose ends is present the voltage Vs to be limited.
  • V(Z1) is the breakdown voltage of the diode Z1
  • Vbe are the voltages present between the base and emitter terminals respectively of the transistors T1 and T2 incorporated in the Darlington couple (T1,T2).
  • a second known technical solution shown in FIG. 2, calls for the use of a voltage limiting circuit comprising a transistor T3 with open base placed between the transistors T1 and T2 of the Darlington couple (T1,T2).
  • a last known technical solution of the prior art, shown in FIG. 3, requires that in substitution of the transistor T3 the voltage limiting circuit includes a Zener diode chain.
  • the technical problem underlying the present invention is to provide an integrated electronic voltage limiting circuit which would be very accurate as regards its breakdown voltage and independent of temperature.
  • the voltage limiting circuit comprises at least one first and one second terminal between which is present a voltage Vs to be limited.
  • the circuit also comprises at least one first bipolar NPN transistor T2 having a first terminal connected to the first terminal of the circuit and a second terminal kept at a reference voltage E.
  • This first transistor T2 also comprises a control terminal coupled with the second terminal of the circuit through at least one first equivalent resistive element R'.
  • the first equivalent resistive element R' incorporates at least one second bipolar PNP transistor T1 having a first terminal connected to the control terminal of the first transistor T2 and a second terminal connected to the second terminal of the circuit.
  • the second transistor T1 is equipped with a control terminal driven through a resistive divider (R1,R2) incorporating a second R1 and a third R2 resistive element connected in series together and inserted between the first and second terminals of the circuit.
  • R1,R2 resistive divider
  • the reference voltage E is generated by a plurality of one-way current flow circuit elements (Z1,D1,...Dn) connected together in series.
  • circuit elements comprise at least one Zener diode Z1 with positive temperature coefficient and at least some junction diodes (D1,...Dn) with negative temperature coefficient so as to make the reference voltage E constant with the temperature.
  • FIG. 7 shows a circuit diagram of a possible application of the circuit.
  • the circuit is connected by its first terminal to a first terminal of an inductive electrical load ZL having a second terminal connected to a power supply line AL.
  • the second terminal of the circuit is connected to a control terminal of a switch T3 placed in series with the electrical load ZL.
  • control terminal is also connected to drive circuit means P not shown in FIG. 7 because conventional.
  • the first transistor T2 has a breakdown voltage Vcer greater than the breakdown voltage Vceo present between the first and second terminals of the transistor T2 when the control terminal is open.
  • This breakdown voltage Vcer is also smaller than the breakdown voltage Vces present between the first and second terminals of the same transistor T2 when the control terminal is short circuited.
  • the breakdown voltage Vcer depends on the value of the first equivalent resistive element R'.
  • Vs VR2*(R1+R2)/R2
  • the reference voltage E is 20V and the second R1 and third R2 resistive elements are 95k ⁇ and 5k ⁇ respectively.
  • R' E*R1*R2/ ⁇ (h fe *(R1*R2)*[E-Vs*R2/(R1+R2)] ⁇ where h fe is the current gain of the second transistor T1.
  • the first transistor T2 is in a condition near breakdown voltage Vces.
  • the first transistor T2 is in a condition near the breakdown voltage Vceo.
  • Vs modulates the value of the first resistive element R' in accordance with the formula (2) and the chart shown in FIG. 8 keeping the first transistor T2 in breakdown at a voltage Vs which is taken from the formula (3) and is equal to:
  • Vs (Vcer) E*(R1+R2)/R2
  • this breakdown voltage is temperature independent as the voltage E is temperature independent.
  • the circuit in accordance with the present invention has a breakdown voltage which is temperature-stable and also of predetermined value between the values of the voltages Vceo and Vces.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Control Of Electrical Variables (AREA)
  • Ignition Installations For Internal Combustion Engines (AREA)

Claims (9)

  1. Spannungsbegrenzungsschaltung, welche einen ersten und einen zweiten Anschluss aufweist, zwischen welchen eine zu begrenzende Spannung (Vs) angelegt wird, der Ausführung, welche wenigstens einen ersten Transistor (T2) aufweist, welcher einen ersten Anschluss, der mit dem ersten Anschluss der spannungsbegrenzenden Schaltung verbunden ist, einen zweiten Anschluss und einen Steueranschluss aufweist, der mit dem zweiten Anschluss der spannungsbegrenzenden Schaltung über wenigstens ein erstes äquivalentes Widerstandselement (R') verbunden ist, wobei eine Referenzspannung (E) zwischen dem zweiten Anschluss des ersten Transistors (T2) und dem zweiten Anschluss der spannungsbegrenzenden Schaltung angelegt wird, wobei die Referenzspannung (E) temperaturunabhängig ist und das äquivalente Widerstandselement (R') einen Wert besitzt, der von dem Wert der zu begrenzenden Spannung (Vs) abhängt, so dass der erste Transistor eine temperaturstabile Durchbruchsspannung (Vcer) haben wird.
  2. Schaltung nach Anspruch 1, dadurch gekennzeichnet, dass das erste äquivalente Widerstandselement (R') wenigstens einen zweiten Transistor (T1) beinhaltet, welcher einen ersten Anschluss hat, der mit dem Steueranschluss des ersten Transistors (T2) verbunden ist und einen zweiten Anschluss hat, der mit dem zweiten Anschluss der spannungsbegrenzenden Schaltung verbunden ist.
  3. Schaltung nach Anspruch 2, dadurch gekennzeichnet, dass der zweite Transistor (T1) mit einem Steueranschluss versehen ist, welcher über einen Widerstandsteiler (R1, R2) gesteuert wird, der zwischen dem ersten und dem zweiten Anschluss der spannungsbegrenzenden Schaltung eingesetzt ist.
  4. Schaltung nach Anspruch 3, dadurch gekennzeichnet, dass der Widerstandsteiler (R1, R2) wenigstens ein zweites (R1) und ein drittes (R2) Widerstandselement aufweist, welche in Reihe miteinander verbunden sind.
  5. Schaltung nach Anspruch 1, dadurch gekennzeichnet, dass der erste Transistor (T2) ein bipolarer Transistor vom NPN-Typ ist.
  6. Schaltung nach Anspruch 2, dadurch gekennzeichnet, dass der zweite Transistor (T1) ein bipolarer Transistor vom PNP-Typ ist.
  7. Schaltung nach Anspruch 1, dadurch gekennzeichnet, dass die Referenzspannung (E) mit wenigstens einer Vielzahl von Schaltungselementen (Z1, D1,...,Dn) mit Stromfluss in einer Richtung erzeugt wird, welche in Reihe miteinander verbunden sind.
  8. Schaltung nach Anspruch 7, dadurch gekennzeichnet, dass die Schaltungselemente (Z1, D1,...,Dn) mit Stromfluss in einer Richtung wenigstens eine Zener-Diode mit positivem Temperaturkoeffizienten und wenigstens eine der Sperrschichtdioden mit negativem Temperaturkoeffizienten aufweist, so dass die Referenzspannung (E) temperaturkonstant ist.
  9. Elektronisches Zundsystem für einen Verbrennungsmotor von der Art, welches aufweist:
    eine elektrische Last (ZL) induktiver Art, welche einen ersten Anschluss hat, der mit einer Spannungsversorgungsleitung (AL) und einem zweiten Anschluss verbunden ist, und
    einen Schalter (T3), welcher mit einem ersten und einem zweiten Anschluss zwischen den zweiten Anschluss der elektrischen Last (ZL) und ein Referenzpotential (GND) eingefügt ist, und welcher einen Steueranschluss hat, der mit der Treiber-Schaltungseinrichtung (P) verbunden ist;
    wenigstens eine spannungsbegrenzende Schaltung, welche zwischen den zweiten Anschluss der elektrischen Last (ZL) und den Steueranschluss des Schalters (T3) geschaltet ist, um eine Uberspannung zu begrenzen, die zwischen dem ersten und dem zweiten Anschluss des Schalters (T3) vorliegt;
    dadurch gekennzeichnet, dass die Schaltung aufweist: einen ersten und einen zweiten Anschluss, zwischen denen eine zu begrenzende Spannung (Vs) angelegt ist, wobei der erste und der zweite Anschluss, jeweils mit dem zweiten Anschluss der elektrischen Last (ZL) und dem Steueranschluss des Schalters (T3) verbunden sind, und wenigstens einen ersten Transistor (T2), welcher einen ersten Anschluss hat, der mit dem ersten Anschluss der Schaltung verbunden ist, einen zweiten Anschluss und einen Steueranschluss hat, der mit dem zweiten Anschluss des Schalters (T3) über wenigstens ein erstes äquivalentes Widerstandselement (R') verbunden ist, wobei eine Referenzspannung (E) zwischen den zweiten Anschluss des ersten Transistors (T2) und den zweiten Anschluss der spannungsbegrenzenden Schaltung angelegt wird, wobei die Referenzspannung (E) temperaturunabhängig ist und das äquivalente Widerstandselement (R') einen Wert besitzt, welcher von dem Wert der zu begrenzenden Spannung (Vs) abhängt, so dass der erste Transistor (T2) eine temperaturstabile Durchbruchsspannung (Vcer) hat.
EP95830345A 1995-07-31 1995-07-31 Integrierte Schaltung zur Spannungsbegrenzung Expired - Lifetime EP0757441B1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP95830345A EP0757441B1 (de) 1995-07-31 1995-07-31 Integrierte Schaltung zur Spannungsbegrenzung
DE69527201T DE69527201D1 (de) 1995-07-31 1995-07-31 Integrierte Schaltung zur Spannungsbegrenzung
US08/644,519 US5818120A (en) 1995-07-31 1996-05-10 Circuit for limiting an overvoltage on a control switch connected in series with an inductive load

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP95830345A EP0757441B1 (de) 1995-07-31 1995-07-31 Integrierte Schaltung zur Spannungsbegrenzung

Publications (2)

Publication Number Publication Date
EP0757441A1 EP0757441A1 (de) 1997-02-05
EP0757441B1 true EP0757441B1 (de) 2002-06-26

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EP95830345A Expired - Lifetime EP0757441B1 (de) 1995-07-31 1995-07-31 Integrierte Schaltung zur Spannungsbegrenzung

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US (1) US5818120A (de)
EP (1) EP0757441B1 (de)
DE (1) DE69527201D1 (de)

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US6731486B2 (en) 2001-12-19 2004-05-04 Fairchild Semiconductor Corporation Output-powered over-voltage protection circuit
DE10340937A1 (de) * 2003-09-05 2005-03-31 Robert Bosch Gmbh Transistorschaltung mit Spannungsbegrenzungseinrichtung und Verwendung eines Basis-Emitter-Widerstands
US8421478B2 (en) * 2008-01-25 2013-04-16 International Business Machines Corporation Radio frequency integrated circuit with on-chip noise source for self-test
DE102013221900A1 (de) * 2013-10-29 2015-04-30 Robert Bosch Gmbh Überspannungsschutzschaltung für einen Leistungshalbleiter und Verfahren zum Schutz eines Leistungshalbleiters vor Überspannungen
RU2638823C1 (ru) * 2016-12-12 2017-12-18 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Устройство управления нагрузкой
CN117007892B (zh) * 2023-09-26 2023-12-15 深圳市思远半导体有限公司 检测电路、电源管理芯片及电子设备

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Also Published As

Publication number Publication date
US5818120A (en) 1998-10-06
EP0757441A1 (de) 1997-02-05
DE69527201D1 (de) 2002-08-01

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