ES2101148T3 - Circuito de proteccion para un mosfet de potencia, que acciona una carga inductiva. - Google Patents

Circuito de proteccion para un mosfet de potencia, que acciona una carga inductiva.

Info

Publication number
ES2101148T3
ES2101148T3 ES93102397T ES93102397T ES2101148T3 ES 2101148 T3 ES2101148 T3 ES 2101148T3 ES 93102397 T ES93102397 T ES 93102397T ES 93102397 T ES93102397 T ES 93102397T ES 2101148 T3 ES2101148 T3 ES 2101148T3
Authority
ES
Spain
Prior art keywords
protection circuit
operates
power transistor
power mosfet
inductive load
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES93102397T
Other languages
English (en)
Inventor
Martin Dipl-Ing Feldtkeller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of ES2101148T3 publication Critical patent/ES2101148T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches

Landscapes

  • Control Of Electrical Variables (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)

Abstract

EL CIRCUITO DE CONMUTACION DE PROTECCION, SEGUN LA INVENCION, SE UTILIZA PARA DERIVAR ENERGIA INDUCTIVA LIBERADA A TRAVES DE UN TRANSISTOR DE POTENCIA (8) AL SER DESCONECTADO. EL CIRCUITO DE PROTECCION (5) PRESENTA UNA REFERENCIA BANDGAP. EL CIRCUITO DE PROTECCION ES ALIMENTADO TAN SOLO POR LA TENSION APLICADA EN EL TRAMO DE POTENCIA DEL TRANSISTOR DE POTENCIA (8). INCLUSO EN EL CASO DE FALLO DE LA TENSION EN EL CIRCUITO DE CONTROL (3) DEL TRANSISTOR DE POTENCIA (8), EL CIRCUITO DE PROTECCION PROCURA QUE LA ENERGIA INDUCTIVA QUE EVENTUALMENTE PUEDA APARECER, SEA DERIVADA A TRAVES DEL TRANSISTOR DE POTENCIA (8).
ES93102397T 1992-03-10 1993-02-16 Circuito de proteccion para un mosfet de potencia, que acciona una carga inductiva. Expired - Lifetime ES2101148T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4207590 1992-03-10

Publications (1)

Publication Number Publication Date
ES2101148T3 true ES2101148T3 (es) 1997-07-01

Family

ID=6453691

Family Applications (1)

Application Number Title Priority Date Filing Date
ES93102397T Expired - Lifetime ES2101148T3 (es) 1992-03-10 1993-02-16 Circuito de proteccion para un mosfet de potencia, que acciona una carga inductiva.

Country Status (4)

Country Link
US (1) US5453900A (es)
EP (1) EP0560086B1 (es)
DE (1) DE59306226D1 (es)
ES (1) ES2101148T3 (es)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5745323A (en) * 1995-06-30 1998-04-28 Analog Devices, Inc. Electrostatic discharge protection circuit for protecting CMOS transistors on integrated circuit processes
US5751525A (en) * 1996-01-05 1998-05-12 Analog Devices, Inc. EOS/ESD Protection circuit for an integrated circuit with operating/test voltages exceeding power supply rail voltages
DE19626630C1 (de) * 1996-07-02 1997-09-11 Siemens Ag Vorrichtung zum Schalten eines induktiven Verbrauchers
US5917689A (en) * 1996-09-12 1999-06-29 Analog Devices, Inc. General purpose EOS/ESD protection circuit for bipolar-CMOS and CMOS integrated circuits
US5838146A (en) * 1996-11-12 1998-11-17 Analog Devices, Inc. Method and apparatus for providing ESD/EOS protection for IC power supply pins
EP0860947B1 (en) * 1997-02-19 2004-10-13 STMicroelectronics S.r.l. Overvoltages protection device for the protection of a power transistor having a MOS control terminal
DE10340603B4 (de) * 2003-09-01 2009-06-10 Infineon Technologies Ag Schaltungsanordnung und Spannungsregeleinrichtung mit Schaltungsanordnung
KR102382253B1 (ko) * 2018-10-30 2022-04-01 주식회사 엘지에너지솔루션 메인 스위치를 위한 드라이버 회로 및 그것을 포함하는 제어 장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936725A (en) * 1974-08-15 1976-02-03 Bell Telephone Laboratories, Incorporated Current mirrors
DE3132257C2 (de) * 1981-08-14 1983-10-20 Siemens AG, 1000 Berlin und 8000 München Überlastungsschutzschaltung für einen Feldeffekttransistor
FR2593946B1 (fr) * 1986-01-24 1988-06-03 Peugeot Regulateur de tension
US4860152A (en) * 1989-01-30 1989-08-22 Delco Electronics Corporation Two stage protection circuit for a power MOSFET driving an inductive load
GB2228639B (en) * 1989-02-17 1992-07-15 Motorola Semiconducteurs Protected darlington transistor arrangement
JPH0666600B2 (ja) * 1989-10-02 1994-08-24 株式会社東芝 電流検出回路

Also Published As

Publication number Publication date
EP0560086B1 (de) 1997-04-23
DE59306226D1 (de) 1997-05-28
EP0560086A3 (es) 1994-02-09
US5453900A (en) 1995-09-26
EP0560086A2 (de) 1993-09-15

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