US5045481A - Method of manufacturing a solar cell - Google Patents

Method of manufacturing a solar cell Download PDF

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Publication number
US5045481A
US5045481A US07/563,821 US56382190A US5045481A US 5045481 A US5045481 A US 5045481A US 56382190 A US56382190 A US 56382190A US 5045481 A US5045481 A US 5045481A
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United States
Prior art keywords
semiconductor body
contact
strip
metallic connection
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
US07/563,821
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English (en)
Inventor
Roland Schilling
Karl-Heinz Tentscher
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Systemtechnik AG
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Telefunken Electronic GmbH
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Assigned to TELEFUNKEN SYSTEMTECHNIK GMBH reassignment TELEFUNKEN SYSTEMTECHNIK GMBH ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: TELEFUNKEN ELECTRONIC GMBH
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/904—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the shapes of the structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to a solar cell consisting of a doped semiconductor base body, a front surface provided for the incident light and metallic connection contacts for the front surface and for the opposite rear side.
  • More and more fields of use are developing for solar cells for supplying electrical systems with current, independent of the mains voltage.
  • the efficiency data of the solar cells used, their operating voltages and generator currents are, inter alia, important criteria.
  • single solar cells are interconnected in series.
  • the metallic connection contact on the surface of a solar cell is, for example, electrically connected to the connection contact on the rear side of a further solar cell.
  • An increase in the generator current is, for example, obtained by several single solar cells being interconnected in parallel or by "strings" connected in series which are themselves connected in parallel.
  • the electrical connecting elements are of decisive importance.
  • German Offenlegungsschrift 3 303 926 discloses a solar cell wherein a metallic connector is mechanically attached as a front side contact on a conduction path system so that the connector protrudes beyond the disc edge of the solar cell.
  • the solar modules interconnected by means of these connectors have attained a high degree of reliability, but also require a certain expenditure with respect to the connectors and the connection technique.
  • the object underlying the present invention is, therefore, to provide a solar cell structure with connector contacts, which enables further improvement of the manufacture of solar modules.
  • At least one of the metallic connection contacts comprises a connector contact which is homogeneously integrated with it and protrudes from the semiconductor base body.
  • connection contact and the connector contact are produced as a coherent piece by means of a metallization mask by a vaporization process in high vacuum.
  • FIG. 1 shows a solar cell with a connector contact, integrated with the metallic connection contact on the front surface
  • FIG. 2 shows a solar cell with a connector contact, integrated with the metallic connection contact on the rear side;
  • FIG. 3a shows the interconnection of two solar cells by means of a connector contact which is integrated with the metallic connection contact of the surface;
  • FIG. 3b shows the interconnection of two solar cells by means of a connector contact which is integrated with the metallic connection contact of the rear side;
  • FIG. 4a shows the separating of the connector contact arranged on the front surface from a part of the semiconductor base body
  • FIG. 4b shows the separating of the connector contact arranged on the rear side from a part of the semiconductor base body
  • FIG. 5 shows the arrangement of single solar cells on a wafer disc
  • FIG. 6 shows a solar cell with connector contacts, integrated with respective metallic connection contacts on the front surface and the rear side;
  • FIG. 7 shows the interconnection of two solar cells with a structure as illustrated in FIG. 6, to form a parallel connected module.
  • FIG. 1 A perspective illustration of a solar cell with an integrated connector contact is shown in FIG. 1.
  • This is a solar cell with a doped semiconductor base body 1a, in which a pn junction is provided. Its front surface 2a for the incident light is covered by a metallic connection contact 3a exhibiting a comb-type structure. This results in an optimum with respect to minimum surface shadowing and a maximum transition conductance value between semiconductor base body 1a and metallic connection contact 3a.
  • the comb-type metallic connection contact 3a verges at its web arranged at the edge of the surface 2a parallel to an edge of the semiconductor base body 1a into a rectangularly shaped surface 4a which protrudes beyond the semiconductor base body 1a and is thereby deformable. It is thus homogeneously integrated with the connection contact 3a as a connector contact.
  • a further metallic connection contact 7a Arranged on the rear side 5a of the semiconductor base body 1a is a further metallic connection contact 7a which covers the entire rear side 5a.
  • the metallic connection contacts 3a and 7a and also the connector contact 4a preferably consist of a titanium-palladium-silver layer system with a layer thickness of between 4 and 13 ⁇ m.
  • FIG. 2 A modification for a further type of arrangement of the connector contact is shown in FIG. 2.
  • a solar cell is produced by doping a semiconductor base body 1b to form a pn junction.
  • connection contacts 3b which exhibit a comb-type structure and are designed in accordance with the optimization described in FIG. 1 with respect to surface shadowing and transition conductance value.
  • a metallic connection contact 7b Arranged on and covering the entire rear side 5b is a metallic connection contact 7b which verges at an edge of the semiconductor base body 1b into a rectangular, protruding and thus deformable connector contact 4b which is thereby homogeneously integrated with the connection contact 3b.
  • the data given in connection with FIG. 1 apply to the thickness dimensions and material compositions.
  • FIG. 3a shows a principal type of interconnection of solar cells which are designed in accordance with FIG. 1.
  • the connector contact 4a at the surface of a solar cell for the series connection is attached in an electrically conducting manner by soldering, welding, adhesion (gluing) or ultrasonic welding to the metallic connection contact 7a of a further solar cell at a contact connecting point 8a provided therefor.
  • the cross-section of the connector contact 4a which in accordance with the invention is deformable, is of a pre-formed s-shape in order to counter thermally caused expansions of the solar module.
  • FIG. 3b shows a principal type of series interconnection of solar cells which are designed in accordance with FIG. 2.
  • the connector contact 4b on the rear side of a solar cell is attached in an electrically conducting manner to the metallic connection contact 3b of a further solar cell at a contact connecting point 8b provided therefor.
  • the cross-section of the connector contact is likewise preferably of a pre-formed s-shape.
  • a metallic connection contact covering the entire surface is disposed on the rear side 5a.
  • a strip 12a is produced at an edge zone to prevent an adhesive or sinter bonding of metallic compounds or alloys to the semiconductor base body 1a.
  • This strip 12a which can be produced by a photolithographic process, is at least equally large in its dimensions and has the same surface area as the surface of the connector contact 4a to be produced.
  • the strip 12a may preferably consist of vapor deposited silver, photoresist or silicon dioxide.
  • the metallic connection contact 3a including the connector contact 4a is homogeneously and coherently produced by a vaporization process in high vacuum on the strip 12a and the surface 2a.
  • the vaporization takes place successively with the various materials such as Ti, Pd, Ag.
  • the contact and connector material is sintered by a subsequent annealing process.
  • the metallization mask is oriented in such a way that the connector contact 4a does not protrude beyond the strip 12a at any point.
  • a v-shaped groove 11a symmetrically to a breaking edge 10a which in its extension delimits the strip 12a from the connection contact 3a which adjoins it.
  • the depth of the v-shaped groove 11a is approximately one third of the thickness of the semiconductor base body 1a.
  • FIG. 4b shows the way in which the connector contact 4b is manufactured in a solar cell exhibiting the structure shown in FIG. 2.
  • a strip 12b which prevents an adhesive or sinter bonding of metallic compounds or alloys with the semiconductor base body 1b is produced.
  • This strip 12b is at least equally large in its dimensions and has the same surface area as the surface of the connector contact 4b.
  • the strip 12b may preferably consist of silver, photoresist or silicon dioxide.
  • the metallic connection contact 7b including the connector contact 4b is homogeneously and coherently produced in accordance with the structure shown in FIG. 2 by a vaporization process in high vacuum on the strip 12b and the rear side 5b.
  • the metallization mask is oriented as in the process described with reference to FIG. 4a.
  • a v-shaped groove 11b symmetrically to a breaking edge 10b which in its extension delimits the strip 12b from the connection contact 7b adjoining it.
  • the depth of the v-shaped groove 11b is approximately one third of the thickness of the semiconductor base body 1b.
  • the connector contacts 4a, 4b are also deformable.
  • FIG. 5 shows the arrangement of the inventive solar cells on a wafer disc.
  • two solar cells with a structural design as shown in FIG. 1 are arranged, for example, in mirror symmetry and a third solar cell adjoins them at right angles.
  • the contours of the single solar cells are produced by means of v-shaped laser grooves 6 and 10a, respectively, on the metallic connection contact 7a of the rear side 5a and subsequent breaking.
  • the solar cell shown in FIG. 6 comprises on the front surface 2c and the rear side 5c one protruding connector contact 4c 1 and 4c 2 , respectively, which are arranged diametrically in relation to each other on a doped semiconductor base body 1c.
  • the connector contacts 4c 1 and 4c 2 are homogeneously integrated with the respective connection contacts 3c and 7c.
  • a solar cell with this structure is suitable, for example, for a parallel interconnection of two or several solar cells as shown in FIG. 7 to form modules.
  • connection contact 4c 2 of the connection contact 7c on the rear side of a solar cell with the semiconductor base body 1c 1 is attached in an electrically conducting manner to the metallic connection contact 7c of a further solar cell with the semiconductor base body 1c 2 at a contact connecting point 8c 2 .
  • the connector contact 4c 1 of the further solar cell with the semiconductor base body 1c 2 is attached in an electrically conducting manner to the connection contact 3c of the first solar cell at a contact connecting point 8c 1 .
  • the layer thicknesses of the connection contacts 3a, 3b, 3c, 7a, 7b, 7c and also the connector contacts 4a, 4b, 4c 1 , 4c 2 is between 4 ⁇ m and 13 ⁇ m.
  • the thickness of the strips 12a, 12b in the case of silver is in the order of magnitude of less than 1 ⁇ m, in the case of photoresist less than 5 ⁇ m and in the case of silicon dioxide less than 1 ⁇ m.
  • the connector contacts 4a, 4b, 4c 1 , 4c 2 have--in relation to the surfaces 2a, 5b, 2c, 5c--a surface fraction of approximately 30%.
  • the connector contact 4a measures 15 mm ⁇ 30 mm.
  • connector contacts 4a, 4b, 4c are of finger-shaped design, and they may be structured in themselves to compensate for thermally caused expansions.

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  • Photovoltaic Devices (AREA)
US07/563,821 1985-03-27 1990-07-30 Method of manufacturing a solar cell Expired - Fee Related US5045481A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19853511082 DE3511082A1 (de) 1985-03-27 1985-03-27 Solarzelle
DE3511082 1985-03-27

Related Parent Applications (1)

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US06839172 Division 1986-03-13

Publications (1)

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US5045481A true US5045481A (en) 1991-09-03

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US (1) US5045481A (enrdf_load_stackoverflow)
JP (1) JPS61224466A (enrdf_load_stackoverflow)
DE (1) DE3511082A1 (enrdf_load_stackoverflow)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5100808A (en) * 1990-08-15 1992-03-31 Spectrolab, Inc. Method of fabricating solar cell with integrated interconnect
US5164019A (en) * 1991-07-31 1992-11-17 Sunpower Corporation Monolithic series-connected solar cells having improved cell isolation and method of making same
US5500559A (en) * 1993-05-28 1996-03-19 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US5656542A (en) * 1993-05-28 1997-08-12 Kabushiki Kaisha Toshiba Method for manufacturing wiring in groove
US20090078301A1 (en) * 2007-09-25 2009-03-26 Sanyo Electric Co., Ltd. Solar cell module
GB2453746A (en) * 2007-10-16 2009-04-22 Renewable Energy Corp Asa Parallel interconnection of solar cell units
DE102008021355A1 (de) * 2008-03-14 2009-10-01 Ersol Solar Energy Ag Verfahren zur Herstellung monokristalliner Solarzellen mit rückseitiger Kontaktstruktur
US20100132760A1 (en) * 2007-05-24 2010-06-03 International Business Machines Corporation Backside contacting on thin layer photovoltaic cells
US20140261659A1 (en) * 2013-03-13 2014-09-18 Gtat Corporation Free-Standing Metallic Article for Semiconductors
US8936709B2 (en) 2013-03-13 2015-01-20 Gtat Corporation Adaptable free-standing metallic article for semiconductors
CN109309135A (zh) * 2018-11-09 2019-02-05 武宇涛 光伏电池模组及其制备方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3733645A1 (de) * 1987-10-05 1989-04-20 Telefunken Electronic Gmbh Raumfahrtsolarzelle
JP2007281530A (ja) * 2007-07-31 2007-10-25 Sanyo Electric Co Ltd 太陽電池モジュール
JP2009111034A (ja) * 2007-10-26 2009-05-21 Sanyo Electric Co Ltd 太陽電池モジュール及びこれを用いた太陽電池装置
DE102021115260A1 (de) 2021-06-14 2022-12-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Verfahren zur Herstellung zumindest einer Photovoltaikzelle zur Wandlung elektromagnetischer Strahlung in elektrische Energie

Citations (13)

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Publication number Priority date Publication date Assignee Title
US3378407A (en) * 1964-03-16 1968-04-16 Globe Union Inc Solar cell module
US3483038A (en) * 1967-01-05 1969-12-09 Rca Corp Integrated array of thin-film photovoltaic cells and method of making same
US3615855A (en) * 1969-04-03 1971-10-26 Gen Motors Corp Radiant energy photovoltalic device
DE2334164A1 (de) * 1972-07-28 1974-02-07 Telecommunications Sa Sonnenbatterieelement und verfahren zu seiner herstellung
DE2919041A1 (de) * 1979-05-11 1980-11-13 Messerschmitt Boelkow Blohm Solarzellenanordnung
FR2520558A1 (fr) * 1982-01-22 1983-07-29 Comp Generale Electricite Procede de fabrication de modules de cellules solaires
DE3303312A1 (de) * 1982-02-11 1983-09-01 Energy Conversion Devices, Inc., 48084 Troy, Mich. Verfahren zur herstellung verbesserter fotozellen-bauelemente und solarzelle
US4416052A (en) * 1982-03-29 1983-11-22 General Dynamics, Convair Division Method of making a thin-film solar cell
DE3235493A1 (de) * 1982-09-24 1984-03-29 Siemens AG, 1000 Berlin und 8000 München Verdrahtung fuer solarzellen
DE3303926A1 (de) * 1983-02-05 1984-08-16 Telefunken electronic GmbH, 6000 Frankfurt Scheibenfoermige solarzelle
JPS61292380A (ja) * 1985-06-19 1986-12-23 Sharp Corp 太陽電池の製造方法
US4652693A (en) * 1985-08-30 1987-03-24 The Standard Oil Company Reformed front contact current collector grid and cell interconnect for a photovoltaic cell module
US4915743A (en) * 1987-10-05 1990-04-10 Telefunken Electronic Gmbh Space solar cell

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3378407A (en) * 1964-03-16 1968-04-16 Globe Union Inc Solar cell module
US3483038A (en) * 1967-01-05 1969-12-09 Rca Corp Integrated array of thin-film photovoltaic cells and method of making same
US3615855A (en) * 1969-04-03 1971-10-26 Gen Motors Corp Radiant energy photovoltalic device
DE2334164A1 (de) * 1972-07-28 1974-02-07 Telecommunications Sa Sonnenbatterieelement und verfahren zu seiner herstellung
DE2919041A1 (de) * 1979-05-11 1980-11-13 Messerschmitt Boelkow Blohm Solarzellenanordnung
FR2520558A1 (fr) * 1982-01-22 1983-07-29 Comp Generale Electricite Procede de fabrication de modules de cellules solaires
DE3303312A1 (de) * 1982-02-11 1983-09-01 Energy Conversion Devices, Inc., 48084 Troy, Mich. Verfahren zur herstellung verbesserter fotozellen-bauelemente und solarzelle
US4416052A (en) * 1982-03-29 1983-11-22 General Dynamics, Convair Division Method of making a thin-film solar cell
DE3235493A1 (de) * 1982-09-24 1984-03-29 Siemens AG, 1000 Berlin und 8000 München Verdrahtung fuer solarzellen
DE3303926A1 (de) * 1983-02-05 1984-08-16 Telefunken electronic GmbH, 6000 Frankfurt Scheibenfoermige solarzelle
JPS61292380A (ja) * 1985-06-19 1986-12-23 Sharp Corp 太陽電池の製造方法
US4652693A (en) * 1985-08-30 1987-03-24 The Standard Oil Company Reformed front contact current collector grid and cell interconnect for a photovoltaic cell module
US4915743A (en) * 1987-10-05 1990-04-10 Telefunken Electronic Gmbh Space solar cell

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Lanudis et al., IEEE Transactions on Components, Hybrids and Manufacturing Technology vol. CHMT 2, No. 3, Sep. 1979, pp. 350 355. *
Lanudis et al., IEEE Transactions on Components, Hybrids and Manufacturing Technology vol. CHMT-2, No. 3, Sep. 1979, pp. 350-355.

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5100808A (en) * 1990-08-15 1992-03-31 Spectrolab, Inc. Method of fabricating solar cell with integrated interconnect
US5164019A (en) * 1991-07-31 1992-11-17 Sunpower Corporation Monolithic series-connected solar cells having improved cell isolation and method of making same
US5500559A (en) * 1993-05-28 1996-03-19 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US5656542A (en) * 1993-05-28 1997-08-12 Kabushiki Kaisha Toshiba Method for manufacturing wiring in groove
US20100132760A1 (en) * 2007-05-24 2010-06-03 International Business Machines Corporation Backside contacting on thin layer photovoltaic cells
US8772079B2 (en) * 2007-05-24 2014-07-08 International Business Machines Corporation Backside contacting on thin layer photovoltaic cells
US20090078301A1 (en) * 2007-09-25 2009-03-26 Sanyo Electric Co., Ltd. Solar cell module
EP2043164A3 (en) * 2007-09-25 2010-04-28 Sanyo Electric Co., Ltd. Solar cell module
US20110005569A1 (en) * 2007-10-16 2011-01-13 Renewable Energy Corporation Asa Parallel interconnection of solar cell units
GB2453746A (en) * 2007-10-16 2009-04-22 Renewable Energy Corp Asa Parallel interconnection of solar cell units
DE102008021355A1 (de) * 2008-03-14 2009-10-01 Ersol Solar Energy Ag Verfahren zur Herstellung monokristalliner Solarzellen mit rückseitiger Kontaktstruktur
DE102008021355B4 (de) * 2008-03-14 2020-08-20 Solarworld Industries Gmbh Verfahren zur Herstellung monokristalliner Solarzellen mit rückseitiger Kontaktstruktur
US20140261659A1 (en) * 2013-03-13 2014-09-18 Gtat Corporation Free-Standing Metallic Article for Semiconductors
US8916038B2 (en) 2013-03-13 2014-12-23 Gtat Corporation Free-standing metallic article for semiconductors
US8936709B2 (en) 2013-03-13 2015-01-20 Gtat Corporation Adaptable free-standing metallic article for semiconductors
US8940998B2 (en) * 2013-03-13 2015-01-27 Gtat Corporation Free-standing metallic article for semiconductors
CN109309135A (zh) * 2018-11-09 2019-02-05 武宇涛 光伏电池模组及其制备方法

Also Published As

Publication number Publication date
JPS61224466A (ja) 1986-10-06
DE3511082C2 (enrdf_load_stackoverflow) 1989-03-23
DE3511082A1 (de) 1986-10-02

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