US4723110A - Transconductance amplifier - Google Patents

Transconductance amplifier Download PDF

Info

Publication number
US4723110A
US4723110A US07/015,452 US1545287A US4723110A US 4723110 A US4723110 A US 4723110A US 1545287 A US1545287 A US 1545287A US 4723110 A US4723110 A US 4723110A
Authority
US
United States
Prior art keywords
transistors
transconductance amplifier
ratio
output
substantially equal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US07/015,452
Other languages
English (en)
Inventor
Johannes O. Voorman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Philips Corp
Original Assignee
US Philips Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Philips Corp filed Critical US Philips Corp
Assigned to U.S. PHILIPS CORPORATION, A CORP. OF DE reassignment U.S. PHILIPS CORPORATION, A CORP. OF DE ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: VOORMAN, JOHANNES O.
Application granted granted Critical
Publication of US4723110A publication Critical patent/US4723110A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3211—Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only

Definitions

  • the invention relates to a transconductance amplifier comprising two transistors T o each having an emitter area e o , their bases constituting inputs for receiving an input voltage and their emitters being connected to a current source, and further comprising at least a first output for an output current.
  • transconductance amplifiers are suitable for general uses and in particular for use in filter circuits, multipliers and oscillators.
  • a transconductor is a voltage-controlled current source in which the proportionality factor between the output current and the input voltage is given by the transconductance.
  • the simplest transconductor is a differential amplifier, by means of which a voltage applied between the bases is converted into two collector signal currents of opposite phase. In a differential amplifier these signal currents increase as a linear function of the input voltage over a small range only, so that the transconductance is only constant over a very small range of input voltage.
  • transconductor which makes it possible to obtain both a linear and a square-law transconductor with a larger useful output-voltage range.
  • a transconductor of the type defined in the opening paragraph is characterized in that
  • a transconductor in accordance with the invention it is possible to obtain an output-voltage range which is at least twice as large as that of the known transconductors for any value of N by a suitable choice of the ratio between the emitter areas of the transistors and the ratio between the resistance values.
  • the manner in which the collectors of the transistors T o and T 1 , . . . , T N , T N , . . . , T 1 are connected depends on whether the circuit is to be used as a linear transconductor, in which the output current increases, as far as possible, as a linear function of the input voltage, or as a square-law transconductor, in which the output current increases, as far as possible, as a square-law function of the input voltage.
  • a linear transconductor a distinction should be made between class AB and class A operation of the transconductor.
  • a class AB transconductor is to be understood to mean a transconductor whose bias current increases as the input voltage V i increases, and a class A transconductor is to be understood to mean a transconductor whose bias current is independent of the input voltage V i .
  • a class AB linear transconductor in accordance with the invention may be characterized in that the collectors of the transistors T 1 , . . . , T N , T N , . . . , T 1 are connected to a power-supply terminal and in that the collectors of the transistors T o constitute the outputs of the transconductance amplifier.
  • the difference between the collector currents of the transistors T o then increases as a linear function of the input voltage over a specific range.
  • the bias current is comparatively small for low input voltages.
  • the noise level and the d.c. offset at low input voltages are small.
  • a class A linear transconductor in accordance with the invention may be characterized in that each of the transistors T 1 , . . . , T N , T N , . . . , T 1 comprises two parallel-connected transistors, the collector of one transistor being connected to the one transistor T o and the collector of the other transistor being connected to the other transistor T o and in that the collector of one of the transistors T o constitutes a first output of the transconductance amplifier.
  • the output current in each of the collectors of the transistors T o then varies as a linear function of the input voltage over a specific range, so that each of these collectors may constitute an output of the transconductor.
  • a square-law transconductor in accordance with the invention may be characterized in that the collectors of the transistors T 1 , . . . , T N , T N , . . . , T 1 are connected to a first output of the transconductance amplifier. The output current in the first output then decreases as a square-law function of the input voltage over a specific range. If, in accordance with the further embodiment, the collectors of the transistors T o are interconnected, these collectors may constitute a second output of the transconductor because the current in this output then increases as a square-law function of the input voltage.
  • FIG. 1 is the circuit diagram of a class AB linear transconductor in accordance with the invention
  • FIG. 2 shows the circuit diagram of a class A transconductor in accordance with the invention
  • FIG. 3 is the circuit diagram of a square-law transconductor in accordance with the invention.
  • FIGS. 4a and 4b show a class AB linear transconductor in accordance with a first embodiment
  • FIG. 5 shows a class AB linear transconductor in accordance with a second embodiment
  • FIG. 6 shows a class AB linear transconductor in accordance with a third embodiment
  • FIG. 7 shows a class AB linear transconductor in accordance with a fourth embodiment
  • FIG. 8 shows a class AB linear transconductor in accordance with a fifth embodiment
  • FIG. 9 shows a class A linear transconductor in accordance with a first embodiment
  • FIG. 10 shows a class A linear transconductor in accordance with a second embodiment
  • FIG. 11 shows a square-law transconductor
  • FIG. 12 shows a base-current compensation circuit for a transconductor in accordance with the invention.
  • FIG. 13 shows a series arrangement of two transconductors in accordance with the invention.
  • FIG. 1 is the circuit diagram of a class-AB linear transconductor in accordance with the invention.
  • the transconductor comprises two transistors T o1 and T o2 whose bases 3 and 4 constitute the inputs for receiving an input voltage V i and whose emitters are connected to the output 5 of a current source 6 which can supply a current I.
  • the emitters of these 2N transistors are connected to the output 5 of the current source 6.
  • the collectors of the transistors T o1 and T o2 constitute the outputs 7 and 8 of the transconductor, while the collectors of the transistors T 1 , . . . , T N , T N , . . .
  • T 1 are connected to the positive power-supply terminal 1.
  • the transistors T 1 , . . . , T N , T N , . . . , T 1 drain a part of the current I from the current source 6 so that the bias current through the transistors T o1 and T o2 is only a fraction of the current I.
  • the transistors T 1 , . . . , T N , T N , . . . , T 1 draw an increasingly smaller part of the current I, so that the bias current through one of the transistors T o1 and T o2 increases.
  • the advantage of a bias current which increases with the input voltage is that for small input voltages V i there will be less noise and less offset than in the case of a constant bias current.
  • R o can be selected in such a way that the difference between the collector currents of the transistors T o1 and T o2 has a linear relationship with the input voltage V i over an as large as possible range. This will be explained hereinafter by means of some examples of class AB linear transconductors.
  • the difference between the collector currents of the transistors T o1 and T o2 can be obtained by means of a differential-to-single-ended converter 9 of arbitrary construction.
  • This converter 9 may comprise, for example, a current mirror, of which the simplest version is shown in the Figure and which comprises a diode-connected PNP transistor T.sub. Q1 and a PNP transistor T Q2 connected in parallel therewith.
  • the difference between the collector currents of the transistors T o1 and T o2 can then be taken from the output 8.
  • FIG. 2 shows the circuit diagram of a class A linear transconductor in accordance with the invention. Identical parts bear the same reference numerals as in FIG. 1.
  • K 1, . . . , N
  • the current at the output 7 increases as a linear function of the input voltage V i and the current at the output 8 decreases as a linear function of the input voltage V i .
  • both the output 7 and the output 8 may be used directly as the output of the circuit. This makes the circuit very suitable for operation at high frequencies because it is not necessary to use a differential-to-single-ended converter comprising PNP transistors, which generally has less satisfactory high-frequency properties.
  • the output current appears on the output 7.
  • the output 8 is connected to the first power-supply terminal 1.
  • FIG. 3 shows the circuit diagram of a square-law transconductor in accordance with the invention. Identical parts bear the same reference numerals as in FIG. 1.
  • the collectors of the transistors T o1 and T o2 are now connected to an output 7 and the collectors of the transistors T 1 , . . . , T N , T N , . . . , T 1 are connected to an output 8.
  • Both the output 7 and the output 8 may serve as the output of the circuit, the output which is not used being connected to, for example, the positive power-supply terminal 1.
  • FIG. 4a shows a class AB linear transconductor in accordance with a first embodiment, which is the simplest embodiment.
  • a voltage divider comprising two resistors R o is arranged, the junction point of these transistors being connected to two transistors T 1 each having an emitter area e i .
  • these transistors T 1 are suitably commoned to form a single transistor having an emitter area 2 e1 , as is shown in FIG. 4b. If the collector currents of the transistors T o1 , T 1 and T o2 are I 1 , I 2 and I 3 respectively, the following relationship applies to the circuit shown in FIG. 4b:
  • the transistors T 1 draws 2/3 of the current I from the current source 6 for small input voltages V i , so that the effective bias current is then equal to I/3. At increasing input voltages this bias current increases, which has the advantage that for low input voltages the arrangement exhibits a lower noise level and a lower d.c. offset than the known transductors.
  • FIG. 5 shows a class AB linear transconductor in accordance with a second embodiment, identical parts bearing the same reference numerals as in FIG. 4a.
  • a resistor R 1 is arranged between the bases of the transistors T 1 .
  • FIG. 6 shows a class AB linear transconductor in accordance with a third embodiment.
  • V i the output current I 1 -I 3 and the input voltage V i
  • the transistors T 2 may be combined to form a single transistor having an emitter area equal to 2e 2 .
  • the transistors T 3 are preferably also combined to form a single transistor.
  • the properties of the class AB linear transconductor in accordance with the embodiments shown in FIGS. 4 to 8 are given in the following Table.
  • the Table also gives the properties of a normal differential amplifier and the transconductor in accordance with the aforementioned article in the Proceedings ECCTD'83.
  • FIG. 9 shows a class A linear amplifier in accordance with a first embodiment, in which Figure identical parts bear the same reference numerals as in FIG. 2.
  • One transistor T 1 then constitutes the transistor T 1A whose collector is connected to the collector of the transistor T o1 and the other transistor T 1 constitutes the transistor T 1B whose collector is connected to the collector of the transistor T o2 .
  • the fact that the currents on the outputs 7 and 8 then each increase as a linear function of the input voltage can be demonstrated as follows. The difference between the output currents is linear because, as compared with the circuit shown in FIG. 4a, a similar current is added to the currents I 1 and I 3 . Further, the sum of the output currents on the outputs 7 and 8 is equal to the current I from the current source 6, which means that the output currents each should then also increase as a linear function of the input voltage.
  • the arrangement shown in FIG. 2 may be constructed as a higher-order class A linear transconductor.
  • the linear range then increases in the same way as specified in the above Table for the class AB transconductors.
  • FIG. 11 shows a square-law transconductor in accordance with a first embodiment, identical parts bearing the same reference numerals as in FIG. 3.
  • the transistors T 1 are combined to form a single transistor having an emitter area 2e 1 . If the collector currents of the transistors T o1 , T 1 and T o2 are again I 1 , I 2 and I 3 respectively the circuit complies with:
  • the input voltage range of the transconductor can be extended by not applying the total input voltage but by applying, via a voltage divider, a fraction of the total input voltage to the inputs of the transconductor. This results in a reduction of the effective transconductance.
  • the effective transconductance can also be reduced by utilising only a part of the output current by means of a current divider.
  • FIG. 13 illustrates this for the transconductor shown in FIG. 9. Corresponding parts of the second transconductor are primed in this Figure.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
US07/015,452 1986-02-20 1987-02-17 Transconductance amplifier Expired - Lifetime US4723110A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8600422A NL8600422A (nl) 1986-02-20 1986-02-20 Transconductantieversterker.
NL8600422 1986-02-20

Publications (1)

Publication Number Publication Date
US4723110A true US4723110A (en) 1988-02-02

Family

ID=19847601

Family Applications (1)

Application Number Title Priority Date Filing Date
US07/015,452 Expired - Lifetime US4723110A (en) 1986-02-20 1987-02-17 Transconductance amplifier

Country Status (8)

Country Link
US (1) US4723110A (ko)
EP (1) EP0234655B1 (ko)
JP (1) JPH0834393B2 (ko)
KR (1) KR960008496B1 (ko)
DE (1) DE3774896D1 (ko)
HK (1) HK78493A (ko)
NL (1) NL8600422A (ko)
SG (1) SG65793G (ko)

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4965529A (en) * 1989-09-21 1990-10-23 The United States Of America As Represented By The Secretary Of Commerce High current, very wide band transconductance amplifier
US5023568A (en) * 1989-07-28 1991-06-11 U.S. Philips Corporation Combined current differencing and operational amplifier circuit
US5079515A (en) * 1989-05-31 1992-01-07 Kabushiki Kaisha Toshiba Linearized differential amplifier
US5497123A (en) * 1994-12-23 1996-03-05 Motorola, Inc. Amplifier circuit having high linearity for cancelling third order harmonic distortion
US5525937A (en) * 1992-12-28 1996-06-11 Sony Corporation Frequency conversion circuit with UHF/VHF common PLL buffer
US5552729A (en) * 1993-07-05 1996-09-03 Nec Corporation MOS differential voltage-to-current converter circuit with improved linearity
US5576646A (en) * 1994-06-30 1996-11-19 Sgs-Thomson Microelectronics, S.R.L. Transconductor circuit with high-linearity double input and active filter thereof
US5815039A (en) * 1995-07-21 1998-09-29 Nec Corporation Low-voltage bipolar OTA having a linearity in transconductance over a wide input voltage range
US5826182A (en) * 1995-01-25 1998-10-20 Analog Devices, Inc. Double balanced RF mixer with predetermined input impedance
US5933054A (en) * 1995-09-19 1999-08-03 Nec Corporation Bipolar operational transconductance amplifier
US5936465A (en) * 1995-09-19 1999-08-10 Nec Corporation Bipolar OTA using multitail cell
AU715379B2 (en) * 1995-07-21 2000-02-03 Nec Corporation Low-voltage bipolar ota having a linearity in transconductance over a wide input voltage range
US6122497A (en) * 1997-08-21 2000-09-19 Analog Devices, Inc. RF mixer with inductive degeneration
US6137362A (en) * 1997-03-28 2000-10-24 Sgs-Thomson Microelectronics S.A. Low noise and high input dynamic range differential amplifier stage
EP1049249A1 (en) * 1999-04-30 2000-11-02 Lucent Technologies Inc. Variable gain amplifiers
US6339355B1 (en) * 1998-12-16 2002-01-15 Matsushita Electric Industrial Co., Ltd. Offsetting comparator device and comparator circuit
US20030207250A1 (en) * 1999-12-15 2003-11-06 Medispectra, Inc. Methods of diagnosing disease
US20050093580A1 (en) * 2003-11-04 2005-05-05 Altera Corporation Pre-emphasis circuitry and methods
US20050095988A1 (en) * 2003-11-04 2005-05-05 Altera Corporation Adaptive communication methods and apparatus
US20050160327A1 (en) * 2004-01-13 2005-07-21 Altera Corporation Input stage threshold adjustment for high speed data communications
US20060061351A1 (en) * 2004-09-09 2006-03-23 Rockwell Automation Technologies, Inc. Sensor and method including noise compensation
WO2006056955A1 (en) * 2004-11-26 2006-06-01 Koninklijke Philips Electronics N.V. Low voltage mixer circuit
US20060267633A1 (en) * 2005-05-25 2006-11-30 Micron Technology, Inc. Pseudo-differential output driver with high immunity to noise and jitter
US7196557B1 (en) 2004-01-13 2007-03-27 Altera Corporation Multitap fractional baud period pre-emphasis for data transmission
US7265587B1 (en) 2005-07-26 2007-09-04 Altera Corporation LVDS output buffer pre-emphasis methods and apparatus
US20080238545A1 (en) * 2007-03-30 2008-10-02 Don Roy Sauer Linearized class ab biased differential input stage
US20090224802A1 (en) * 2008-03-06 2009-09-10 Micron Technology, Inc. Devices and methods for driving a signal off an integrated circuit
US7598779B1 (en) 2004-10-08 2009-10-06 Altera Corporation Dual-mode LVDS/CML transmitter methods and apparatus
US7773668B1 (en) 2004-01-21 2010-08-10 Altera Corporation Adaptive equalization methods and apparatus for programmable logic devices

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3642620A1 (de) * 1986-12-13 1988-06-23 Philips Patentverwaltung Schaltungsanordnung mit steuerbarer verstaerkung
US5081423A (en) * 1988-07-28 1992-01-14 Kabushiki Kaisha Toshiba Integrator and active filter including integrator with simple phase compensation
EP0429717B1 (de) * 1989-12-01 1995-04-05 Deutsche ITT Industries GmbH Transkonduktanzverstärker
JPH0793544B2 (ja) * 1992-11-09 1995-10-09 日本電気株式会社 差動回路及び差動増幅回路
JPH06162229A (ja) * 1992-11-18 1994-06-10 Nec Corp マルチプライヤ
GB9226550D0 (en) * 1992-12-21 1993-02-17 Philips Electronics Uk Ltd Transconductance amplifier
CA2111945C (en) * 1992-12-21 1997-12-09 Katsuji Kimura Analog multiplier using an octotail cell or a quadritail cell
JP2630230B2 (ja) * 1993-11-10 1997-07-16 日本電気株式会社 増幅回路
US7317357B1 (en) 2006-06-23 2008-01-08 Linear Technology Corporation High linearity low noise variable gain amplifier with continuous gain control
WO2020235465A1 (ja) * 2019-05-20 2020-11-26 日立オートモティブシステムズ株式会社 半導体装置および車載用電子制御装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4612513A (en) * 1984-03-13 1986-09-16 U.S. Philips Corporation Differential amplifier

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4460872A (en) * 1981-12-03 1984-07-17 Inventab Audio Kb Low noise differential amplifier

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4612513A (en) * 1984-03-13 1986-09-16 U.S. Philips Corporation Differential amplifier

Cited By (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5079515A (en) * 1989-05-31 1992-01-07 Kabushiki Kaisha Toshiba Linearized differential amplifier
US5023568A (en) * 1989-07-28 1991-06-11 U.S. Philips Corporation Combined current differencing and operational amplifier circuit
US4965529A (en) * 1989-09-21 1990-10-23 The United States Of America As Represented By The Secretary Of Commerce High current, very wide band transconductance amplifier
US5525937A (en) * 1992-12-28 1996-06-11 Sony Corporation Frequency conversion circuit with UHF/VHF common PLL buffer
US5552729A (en) * 1993-07-05 1996-09-03 Nec Corporation MOS differential voltage-to-current converter circuit with improved linearity
US5576646A (en) * 1994-06-30 1996-11-19 Sgs-Thomson Microelectronics, S.R.L. Transconductor circuit with high-linearity double input and active filter thereof
US5497123A (en) * 1994-12-23 1996-03-05 Motorola, Inc. Amplifier circuit having high linearity for cancelling third order harmonic distortion
EP0718966A1 (en) * 1994-12-23 1996-06-26 Motorola, Inc. Amplifier circuit
US5826182A (en) * 1995-01-25 1998-10-20 Analog Devices, Inc. Double balanced RF mixer with predetermined input impedance
AU715379B2 (en) * 1995-07-21 2000-02-03 Nec Corporation Low-voltage bipolar ota having a linearity in transconductance over a wide input voltage range
US5815039A (en) * 1995-07-21 1998-09-29 Nec Corporation Low-voltage bipolar OTA having a linearity in transconductance over a wide input voltage range
US5933054A (en) * 1995-09-19 1999-08-03 Nec Corporation Bipolar operational transconductance amplifier
US5936465A (en) * 1995-09-19 1999-08-10 Nec Corporation Bipolar OTA using multitail cell
US6137362A (en) * 1997-03-28 2000-10-24 Sgs-Thomson Microelectronics S.A. Low noise and high input dynamic range differential amplifier stage
US6122497A (en) * 1997-08-21 2000-09-19 Analog Devices, Inc. RF mixer with inductive degeneration
US7917120B1 (en) 1997-08-21 2011-03-29 Analog Devices, Inc. RF mixer with inductive degeneration
US6339355B1 (en) * 1998-12-16 2002-01-15 Matsushita Electric Industrial Co., Ltd. Offsetting comparator device and comparator circuit
EP1049249A1 (en) * 1999-04-30 2000-11-02 Lucent Technologies Inc. Variable gain amplifiers
US20030207250A1 (en) * 1999-12-15 2003-11-06 Medispectra, Inc. Methods of diagnosing disease
US20050093580A1 (en) * 2003-11-04 2005-05-05 Altera Corporation Pre-emphasis circuitry and methods
US20050095988A1 (en) * 2003-11-04 2005-05-05 Altera Corporation Adaptive communication methods and apparatus
US6956407B2 (en) 2003-11-04 2005-10-18 Altera Corporation Pre-emphasis circuitry and methods
US7239849B2 (en) 2003-11-04 2007-07-03 Altera Corporation Adaptive communication methods and apparatus
US7528635B2 (en) 2004-01-13 2009-05-05 Altera Corporation Multitap fractional baud period pre-emphasis for data transmission
US7196557B1 (en) 2004-01-13 2007-03-27 Altera Corporation Multitap fractional baud period pre-emphasis for data transmission
US20070241795A1 (en) * 2004-01-13 2007-10-18 Altera Corporation Multitap fractional baud period pre-emphasis for data transmission
US20050160327A1 (en) * 2004-01-13 2005-07-21 Altera Corporation Input stage threshold adjustment for high speed data communications
US7773668B1 (en) 2004-01-21 2010-08-10 Altera Corporation Adaptive equalization methods and apparatus for programmable logic devices
US8194724B1 (en) 2004-01-21 2012-06-05 Altera Corporation Adaptive equalization methods and apparatus for programmable logic devices
US7675285B2 (en) * 2004-09-09 2010-03-09 Rockwell Automation Technologies, Inc. Sensor and method including noise compensation
US20060061351A1 (en) * 2004-09-09 2006-03-23 Rockwell Automation Technologies, Inc. Sensor and method including noise compensation
US7598779B1 (en) 2004-10-08 2009-10-06 Altera Corporation Dual-mode LVDS/CML transmitter methods and apparatus
WO2006056955A1 (en) * 2004-11-26 2006-06-01 Koninklijke Philips Electronics N.V. Low voltage mixer circuit
US20090295454A1 (en) * 2004-11-26 2009-12-03 Koninklijke Philips Electronics N.V. Low voltage mixer circuit
US7622957B2 (en) 2005-05-25 2009-11-24 Micron Technology, Inc. Pseudo-differential output driver with high immunity to noise and jitter
US20060267633A1 (en) * 2005-05-25 2006-11-30 Micron Technology, Inc. Pseudo-differential output driver with high immunity to noise and jitter
US20080211535A1 (en) * 2005-05-25 2008-09-04 Micron Technology, Inc. Pseudo-differential output driver with high immunity to noise and jitter
US7365570B2 (en) 2005-05-25 2008-04-29 Micron Technology, Inc. Pseudo-differential output driver with high immunity to noise and jitter
US7265587B1 (en) 2005-07-26 2007-09-04 Altera Corporation LVDS output buffer pre-emphasis methods and apparatus
US7463094B2 (en) 2007-03-30 2008-12-09 Don Roy Sauer Linearized class AB biased differential input stage
US20080238545A1 (en) * 2007-03-30 2008-10-02 Don Roy Sauer Linearized class ab biased differential input stage
US20090224802A1 (en) * 2008-03-06 2009-09-10 Micron Technology, Inc. Devices and methods for driving a signal off an integrated circuit
US20100213972A1 (en) * 2008-03-06 2010-08-26 Micron Technology, Inc. Devices and methods for driving a signal off an integrated circuit
US8183880B2 (en) 2008-03-06 2012-05-22 Micron Technology, Inc. Devices and methods for driving a signal off an integrated circuit
US7733118B2 (en) 2008-03-06 2010-06-08 Micron Technology, Inc. Devices and methods for driving a signal off an integrated circuit

Also Published As

Publication number Publication date
DE3774896D1 (de) 1992-01-16
NL8600422A (nl) 1987-09-16
SG65793G (en) 1993-08-06
EP0234655B1 (en) 1991-12-04
KR960008496B1 (en) 1996-06-26
EP0234655A1 (en) 1987-09-02
JPS62200808A (ja) 1987-09-04
HK78493A (en) 1993-08-13
JPH0834393B2 (ja) 1996-03-29
KR870008435A (ko) 1987-09-26

Similar Documents

Publication Publication Date Title
US4723110A (en) Transconductance amplifier
US4904952A (en) Differential amplifier incorporating negative resistance
US5182477A (en) Bipolar tunable transconductance element
US5465072A (en) Tunable operational transcondunctance amplifier having high linearity
EP0058448A1 (en) Transconductance amplifier
US5345190A (en) Modular low voltage filter with common mode feedback
US5942929A (en) Active phase splitter
JP3316038B2 (ja) 演算トランスコンダクタンス増幅器・キャパシタ対用の周波数同調システム
US5146179A (en) Fully differential operational amplifier having frequency dependent impedance division
EP0352790B1 (en) Integrator and active filter including integrator with simple phase compensation
US4381487A (en) Resonator coupled differential amplifier
US4996498A (en) Common mode compensation for differential integrating filter
KR890001892B1 (ko) 전압가산회로
KR20020025701A (ko) 증폭회로
US5192884A (en) Active filter having reduced capacitor area but maintaining filter characteristics
US5051628A (en) Integrated filter circuit
US5963064A (en) Linear transfer voltage to current circuit
US4340868A (en) Current mode biquadratic active filter
EP0655831B1 (en) High performance transconductance operational amplifier, of the CMOS integrated type
US4404529A (en) Lowpass filter with electronic control of cutoff and resonance
US4748422A (en) Amplifier circuit suitable for use as an active filter circuit
US5028884A (en) Leapfrog filter having adjustable center frequency and quality factor
US5929699A (en) Integrated active integrator filter with compensated unity gain bandwidth
US4980651A (en) High speed, high precision operational amplifier
EP0368379B1 (en) Transistor circuit with base-current compensation

Legal Events

Date Code Title Description
AS Assignment

Owner name: U.S. PHILIPS CORPORATION, 100 EAST 42ND ST., NEW Y

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:VOORMAN, JOHANNES O.;REEL/FRAME:004708/0104

Effective date: 19870330

STCF Information on status: patent grant

Free format text: PATENTED CASE

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12