US4268845A - Solid-state imaging device - Google Patents

Solid-state imaging device Download PDF

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Publication number
US4268845A
US4268845A US06/096,683 US9668379A US4268845A US 4268845 A US4268845 A US 4268845A US 9668379 A US9668379 A US 9668379A US 4268845 A US4268845 A US 4268845A
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region
imaging device
solid
state imaging
switching elements
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Expired - Lifetime
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US06/096,683
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English (en)
Inventor
Norio Koike
Shoji Hanamura
Masaharu Kubo
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Hitachi Ltd
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Hitachi Ltd
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Assigned to HITACHI, LTD. reassignment HITACHI, LTD. ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: HANAMURA SHOJI, KOIKE NORIO, KUBO MASAHARU
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise

Definitions

  • the present invention relates to a solid-state imaging device in which photoelectric conversion elements and scanning circuits are integrated on the same semiconductor substrate. More specifically, the invention relates to a solid-state imaging device having improved driving format.
  • a solid-state imaging device used for a TV broadcasting camera must have a resolving power comparable with that of image pickup tubes which are currently being used for the TV broadcast. Therefore, it is necessary to provide about 500 ⁇ 500 units of photoelectric conversion elements, horizontal switching elements and vertical switching elements for selecting the photoelectric conversion elements, about 500 stages of horizontal scanning circuits and about 500 stages of vertical scanning circuits for turning on the horizontal and vertical switching elements.
  • the device is usually constructed based upon the MOS LSI technology which permits high integration to be relatively easily materialized.
  • reference numeral 10 denotes a matrix of photoelectric conversion elements
  • 11 denotes horizontal scanning circuits for selecting X-positions in the matrix
  • 12 denotes vertical scanning circuits for selecting Y-positions in the matrix.
  • Reference numeral 13 denotes vertical switching insulated-gate field effect transistors (hereinafter referred to as MOST's) which turn on and off by the vertical scanning pulses from the circuits 12, 14 denotes photodiodes utilizing the source junction of MOST's 13, and 15 denotes vertical signal output lines commonly connecting the drains of MOST's 13.
  • MOST's vertical switching insulated-gate field effect transistors
  • Reference numeral 16 denotes horizontal switching MOST's which turn on and off by the horizontal scanning pulses from the horizontal scanning circuits, and of which the drains are connected to a horizontal signal output line 17 and the sources are connected to vertical signal output lines 15.
  • Reference numeral 18 denotes a driving voltage source (voltage source for video output) for driving photodiodes, which is connected to the horizontal signal output line 17 via a resistor 19, and 20 denotes a signal output terminal.
  • the device is constructed using p-channel MOST's.
  • the device can, of course, be constructed using n-channel MOST's if the polarity of voltage is reversed.
  • the horizontal and vertical scanning circuits turn on the switching MOST's 16 and 13 one by one, such that a photocurrent from the photodiodes that are arrayed in a two-dimensional manner is read out through the resistor 19.
  • the signals from the photodiodes correspond to optical images projected thereonto, whereby it is allowed to take out video signals depending upon the above-mentioned operation.
  • the feature of the solid-state imaging device of this type is that the sources of switching MOST's can be utilized for the photoelectric conversion, and that MOST shift registers can be utilized for the scanning circuits.
  • the solid-state imaging device of this type can be relatively easily integrated to a high degree based upon the MOS LSI technology as illustrated by a picture element of FIG. 2.
  • reference numeral 21 denotes a semiconductor substrate of N-type conductivity for integrating the photoelectric conversion elements and scanning circuits
  • 22 denotes a well region of a semiconductor region of P-type conductivity formed on the semiconductor substrate of N-type conductivity.
  • Reference numeral 13 denotes a vertical switching MOST having a gate electrode 25 which will be turned on and off by the vertical scanning circuit 12, and 26 denotes a source of the MOST 13 which consists of a high impurity concentration region of N-type conductivity and which constitutes a photodiode 14 utilizing the junction with respect to the P-type well.
  • Reference numeral 27 denotes a drain of the MOST 13 consisting of a high impurity concentration region of N-type conductivity, which is connected to a conductive layer 28 that serves as a vertical signal output line 15.
  • the well 22 and the substrate 21 are usually maintained at the ground voltage (0 volt).
  • Reference numerals 31, 32 and 33 denote insulating films which are usually composed of an SiO 2 film.
  • the photodiode charged to a video voltage Vv by the scanning undergoes the discharge ( ⁇ Vv) responsive to the amount of light incident during a one-frame period. Then, as the switching MOST's 13, 16 are rendered conductive by the next scanning, charging current is allowed to flow to supplement the amount lost by the discharge. The charging current is read out through the resistor 19 connected to the voltage source 18 for video output, whereby a video signal is obtained at an output terminal 20.
  • the solid-state imaging device of the picture element construction illustrated in FIG. 2 has the P-type well region and a photoelectric conversion element in the well region, making it possible to prevent the development of blooming. Further, the infrared rays are almost all absorbed in the substrate, without causing the resolution to be deteriorated. Moreover, the spectral response in visible light is flattened making it possible to obtain image signals faithful to the subject, thus presenting various advantages. This device has the most excellent characteristics among the imaging devices proposed and developed thus far.
  • the white defects are caused by the N-type region of the substrate which is short-circuited to the N-type region of the photodiode through a non-diffused region 34 in the well region.
  • the short-circuited state is developed by bad diffusion which is caused by the dust or the like during the step of fabricating the well region.
  • the vertical black lines are likewise developed by the short-circuited state between the N-type region and the N + -type drain. This short-circuited state is also caused by the non-diffused region 35 which is attributed to the infiltration of dust and dirt during the step of fabricating the well region.
  • the non-diffused regions 34, 35 are formed by the dust and dirt which adhere on the surface of the semiconductor substrate; matter masking diffusion which is not subjected to the etching is left, preventing the P-type impurities from being diffused into the semiconductor substrate. It is impossible to completely prevent the introduction of the defects. Even when a well-controlled dust-less equipment is used, several defects develop per square centimeter. Since the imaging device has an area of 1 cm 2 or less, at least several white spots or black vertical lines develop due to the defects, making it very difficult to materialize the imaging device which presents image of good quality. In addition to the above-mentioned defects, there may also develop black spots which, however, are less visible by human eyes provided their diameters are not so large. The black spots therefore less affect the picture quality. Consequently, white spots and black lines present problem in reproducing the images using the solid-state imaging device.
  • the object of the present invention is to prevent the development of white spots and black lines that are main causes for deteriorating the image quality of the solid-state imaging device.
  • the object of the present invention is to provide a solid-state imaging device which does not develop white spots or black lines on the reproduced image.
  • the solid-state imaging device of the present invention has a picture element construction as illustrated in FIG. 2, in which a video voltage is applied to the photodiodes as well as to the substrate, in order that white sports are converted into black spots that are less visible to the eye and that the development of black lines is prevented.
  • FIG. 1 is a circuit diagram schematically illustrating a solid-state imaging device
  • FIG. 2 is a diagram which illustrates a conventional solid-state imaging device, i.e., which illustrates a picture element in cross section and a conventional driving circuit;
  • FIG. 3 is a diagram which illustrates a solid-state imaging device, i.e., which illustrates a picture element structure and a driving circuit according to an embodiment of the present invention.
  • FIG. 3 illustrates a method of driving the solid-state imaging device according to an embodiment of the present invention.
  • FIG. 3 shows a cross-sectional structure of a picture element (photodiode and vertical switching MOST) of the solid-state imaging device, as well as a circuit for driving the picture element.
  • a picture element photodiode and vertical switching MOST
  • a substrate 21 is an N-type silicon substrate having an impurity concentration of 5 ⁇ 10 14 atoms/cm 3 .
  • a P-type well 22 on the surface of the substrate has an impurity concentration of 5 ⁇ 10 15 atoms/cm 3 , and is formed by the diffusion, ion-implantation, epitaxial growth or the like.
  • N + -type regions 26, 27 provided in the P-type well 22 have impurity concentrations of up to 10 20 atoms/cm 3 , and are formed by the diffusion or ion-implantation.
  • a gate electrode 25 of MOST 13 is composed of plycrystalline silicon, and an interconnection electrode 28 which serves as a vertical signal output line is made of aluminum.
  • An insulating film 31 is made of an SiO 2 film of a thickness of 1 ⁇ m
  • an insulating film 32 is made of an SiO 2 film of a thickness of 0.5 ⁇ m
  • a gate insulating film 33 of MOST 13 is made of an SiO 2 film of a thickness of 0.1 ⁇ m.
  • Reference numeral 30 denotes a terminal for applying substrate bias, which is connected to a voltage source 18 for video output (of a voltage of, for instance, +5 volts) (other reference numerals denote the same members as those of FIGS. 1 and 2). (i) When the N + -type region 26 of the photodiode is short-circuited to the N-type substrate 21.
  • the N + -type region 26 of the photodiode remains in a floating state over a one-frame period (up to 30 msec) until it is subjected to the next scanning. Therefore, the N + -type region 26 of the photodiode acquires the same potential as that of the substrate through a non-diffused region 34 irrespective of the presence of incident light.
  • the drain 27 connected to the signal output line 15 remains in a floated state during one horizontal scanning period (up to 64 msec).
  • the signal output line during that period acquires the same potential as that of the substrate through the non-diffused region 35. Therefore, a charging current flows into the signal output line irrespective of the presence of the incident light upon the photodiode. Further, since the current flows for each horizontal scanning period, there appear white vertical lines.
  • the potential of the substrate is greater than the video voltage, there takes place a phenomenon opposite to that of the above-mentioned one. Namely, the charging current flows in the opposite direction giving rise to the development of black vertical lines.
  • the potential difference becomes zero between the substrate 21 and the drain 27 connected to the vertical signal output line; the drain 27 is maintained at the video voltage. Namely, the state is the same as when no non-diffused region 35 is present. Therefore, the charging current does not flow unnecessarily except the current corresponding to that discharged by the optical signal of the photodiode. In other words, there develops no white or black vertical line.
  • the electric current which flows through the substrate is usually of the order of several nanoamperes, or of the degree of signal current (one microampere or smaller) at the greatest. No current capacity is required, and no voltage source for substrate bias is needed, either; the voltage source for video output used for reading the signals is used for biasing the substrate.
  • the above embodiment has dealt with the MOS-type imaging device consisting of photodiodes and insulated-gate field effect transistors.
  • the invention can of course be applied to the CID (charge injection devices) and to the CCD (charge coupled devices) within a range which does not depart from the scope of the invention.
  • the present invention can also be put into practice employing the P-channel insulated-gate field effect transistors.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
US06/096,683 1978-12-01 1979-11-23 Solid-state imaging device Expired - Lifetime US4268845A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP53/147871 1978-12-01
JP53147871A JPS5822901B2 (ja) 1978-12-01 1978-12-01 固体撮像装置

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US4268845A true US4268845A (en) 1981-05-19

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US (1) US4268845A (de)
EP (1) EP0012029B1 (de)
JP (1) JPS5822901B2 (de)
CA (1) CA1125422A (de)
DE (1) DE2966208D1 (de)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4323912A (en) * 1979-06-04 1982-04-06 Hitachi, Ltd. Solid-state imaging device
US4405935A (en) * 1980-01-23 1983-09-20 Hitachi, Ltd. Solid-state imaging device
US4473836A (en) * 1982-05-03 1984-09-25 Dalsa Inc. Integrable large dynamic range photodetector element for linear and area integrated circuit imaging arrays
US4630091A (en) * 1983-04-22 1986-12-16 Matsushita Electronics Corporation Solid state imaging apparatus
US5939742A (en) * 1997-02-10 1999-08-17 Lucent Technologies Inc. Field-effect photo-transistor
US6111281A (en) * 1996-03-22 2000-08-29 Nikon Corporation Solid-state image-pickup device and MOS transistor having a reduced incidental capacitance
US6504194B1 (en) * 1999-12-01 2003-01-07 Innotech Corporation Solid state imaging device, method of manufacturing the same, and solid state imaging system
US6603144B2 (en) * 1999-12-15 2003-08-05 Nec Electronics Corporation Solid-state imaging device and method for fabricating same
US20050127415A1 (en) * 2003-12-12 2005-06-16 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0038697B1 (de) * 1980-04-22 1984-12-12 Semiconductor Research Foundation Halbleiter-Bildsensor
JPS56165473A (en) * 1980-05-24 1981-12-19 Semiconductor Res Found Semiconductor pickup device
DE3135462A1 (de) * 1981-09-08 1983-09-01 AEG-Telefunken Nachrichtentechnik GmbH, 7150 Backnang Monolithische eingangsstufe eines optischen empfaengers
JPS58171850A (ja) * 1982-03-31 1983-10-08 Sony Corp 固体撮像素子

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4143389A (en) * 1976-08-16 1979-03-06 Hitachi, Ltd. Photoelectric element in a solid-state image pick-up device
US4148501A (en) * 1977-12-27 1979-04-10 Rohr Industries, Incorporated Suspension system
US4189749A (en) * 1977-09-16 1980-02-19 Matsushita Electronics Corporation Solid state image sensing device
US4209806A (en) * 1977-08-01 1980-06-24 Hitachi, Ltd. Solid-state imaging device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6017196B2 (ja) * 1978-01-23 1985-05-01 株式会社日立製作所 固体撮像素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4143389A (en) * 1976-08-16 1979-03-06 Hitachi, Ltd. Photoelectric element in a solid-state image pick-up device
US4209806A (en) * 1977-08-01 1980-06-24 Hitachi, Ltd. Solid-state imaging device
US4189749A (en) * 1977-09-16 1980-02-19 Matsushita Electronics Corporation Solid state image sensing device
US4148501A (en) * 1977-12-27 1979-04-10 Rohr Industries, Incorporated Suspension system

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4323912A (en) * 1979-06-04 1982-04-06 Hitachi, Ltd. Solid-state imaging device
US4405935A (en) * 1980-01-23 1983-09-20 Hitachi, Ltd. Solid-state imaging device
US4473836A (en) * 1982-05-03 1984-09-25 Dalsa Inc. Integrable large dynamic range photodetector element for linear and area integrated circuit imaging arrays
US4630091A (en) * 1983-04-22 1986-12-16 Matsushita Electronics Corporation Solid state imaging apparatus
US6111281A (en) * 1996-03-22 2000-08-29 Nikon Corporation Solid-state image-pickup device and MOS transistor having a reduced incidental capacitance
US5939742A (en) * 1997-02-10 1999-08-17 Lucent Technologies Inc. Field-effect photo-transistor
US6656777B2 (en) 1999-12-01 2003-12-02 Innotech Corporation Solid state imaging device, method of manufacturing the same, and solid state imaging system
US6504194B1 (en) * 1999-12-01 2003-01-07 Innotech Corporation Solid state imaging device, method of manufacturing the same, and solid state imaging system
US6677627B2 (en) 1999-12-01 2004-01-13 Innotech Corporation Solid state imaging device, method of manufacturing the same, and solid state imaging system
US6603144B2 (en) * 1999-12-15 2003-08-05 Nec Electronics Corporation Solid-state imaging device and method for fabricating same
US20050127415A1 (en) * 2003-12-12 2005-06-16 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system
US7323731B2 (en) * 2003-12-12 2008-01-29 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system
US20080073737A1 (en) * 2003-12-12 2008-03-27 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system
US7473948B2 (en) 2003-12-12 2009-01-06 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system
US20090085144A1 (en) * 2003-12-12 2009-04-02 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system
US7679116B2 (en) 2003-12-12 2010-03-16 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system
US7928486B2 (en) 2003-12-12 2011-04-19 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system
US20110163407A1 (en) * 2003-12-12 2011-07-07 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system

Also Published As

Publication number Publication date
JPS5575275A (en) 1980-06-06
JPS5822901B2 (ja) 1983-05-12
DE2966208D1 (en) 1983-10-27
EP0012029A1 (de) 1980-06-11
EP0012029B1 (de) 1983-09-21
CA1125422A (en) 1982-06-08

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