US4172282A - Processor controlled memory refresh - Google Patents
Processor controlled memory refresh Download PDFInfo
- Publication number
- US4172282A US4172282A US05/736,969 US73696976A US4172282A US 4172282 A US4172282 A US 4172282A US 73696976 A US73696976 A US 73696976A US 4172282 A US4172282 A US 4172282A
- Authority
- US
- United States
- Prior art keywords
- memory
- processor
- refresh
- force
- taking place
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
Definitions
- This invention relates to electronic data storage systems. More particularly, this invention relates to the use of the processor unit to control the regeneration of a plurality of asynchronously operating dynamic memory units.
- the cross-referenced Dennard patent discloses one type of dynamic memory element which requires periodic restoration of stored information.
- restoration may be interleaved with normal memory operation by using, for example, every tenth cycle of the memory to restore one of the word positions in the array.
- Dennard teaches restoration in a burst mode by interruption of normal memory operation and restoration of the information in the entire memory during the interruption. Either approach accomplishes the desired restoration satisfactorily, but both have an effect on operation of a system incorporating a memory using these schemes, since it is necessary to interfere with normal memory operation while the restoration is being carried out.
- the memory cell in the Dennard patent is extremely simple, consisting of a capacitive storage element gated by a field effect transistor. Such a memory cell has great potential for use in inexpensive, large capacity integrated circuit memories, due to its inherent simplicity. To meet the goal of low cost, it is essential that a memory cell be small in integrated circuit technology. However, reductions in size result in reduction in the capacitance of the storage element. The smaller the capacitance, the more often is restoration necessary. Thus, it is readily apparent that the optimization of refresh schemes is a significant technological problem.
- the cross-referenced Spampinato et al patent discloses a different type of memory cell that also requires periodic refreshing and is known as a four device memory cell. Also known in the art are memory cells having two devices or three devices and also requiring periodic refreshing.
- the purpose of cross-referencing the Spampinato et al patent is to point out that dynamic memories are available in various technological configurations and that the present invention relates to all such dynamically operated memories.
- FIG. 1 of this Anderson et al patent shows the prior art in which a processor 24 is connected to a plurality of memories operating under a single refresh control and timing.
- FIG. 2 illustrates the technique disclosed in the patent in which a separate refresh control and timing is associated with each of the N memory units.
- the attainment of these and related objects may be achieved by placing the refresh of a plurality of memory units under the control of the processor.
- the processor 24 is illustrated having interconnections with a memory BSM 60.
- BSM is meant a basic storage module having an array 68 which might include a plurality of memory chips for memories such as illustrated by reference numerals 14, 16, 18, and 20.
- the present invention goes one step beyond in the sense that a processor is operatively associated with a plurality of memory units or memory BSM's, of the type disclosed, for example, in U.S. Pat. No. 3,800,295.
- the processor includes means for detecting processor operations which require the use of memory and/or processor operations which do not require the use of memory. During those operations when the memories are not required, a "force refresh" line simultaneously refreshes all the memory units within the overall memory system. This force regeneration overrides the internal refresh scheme of each memory unit and furthermore resets all the timing controls within each unit so that internal refreshing will not take place for the maximum possible time.
- the internal refresh scheme of course is set to automatically refresh each memory unit within the retention time of the dynamic memory to prevent the loss of information in a case where a "force regenerate" signal has not been received from the processor.
- memory idle periods are used to take an advance refresh thereby forestalling additional refreshes until a complete refresh interval is used up.
- the present technique would still take advantage of all improvements related to the extension of retention time of individual cells or techniques for improving the percentage of the time in which an individual unit is available to the processor.
- a plurality of memory units forming a memory system and associated with a central processor provide an overall system improvement by the synchronization of all memory units under processor control.
- FIG. 1 is a generalized block diagram of an overall system in accordance with the invention.
- FIGS. 2A, 2B, and 2C are timing diagrams
- FIG. 3 is a more detailed block diagram of a preferred embodiment of an overall system configuration in accordance with the present invention.
- FIG. 4 is a block diagram of a portion of a central processor as used in accordance with the present invention.
- FIG. 5 is a more detailed block diagram of the "force regen” force generator within the processor unit
- FIG. 6 is a more detailed block diagram of the refresh control within a memory unit
- FIGS. 7 and 8 illustrate alternate techniques by which the processor determineds when a force refresh signal should be generated
- FIG. 9 is another embodiment illustrating the present invention in a multi-processor environment.
- a processor 10 is connected to memory storage unit number 1 (also designated as reference numeral 12) by address, control, and data buss lines in a manner well known in the prior art.
- Processor 10 is also connected to additional memory storage units 14 and 16 in the same manner as it is connected to memory storage unit 12.
- Each memory storage unit is essentially a memory BSM as described in the prior art.
- the present invention addresses the additional connection between processor 10 and the various memory storage units by means of a "force refresh" line as shown.
- the force refresh signal applied on the force refresh line serves to synchronize the various memory storage units resulting in an overall system improvememt as described in greater detail hereinbelow.
- FIG. 2A is a timing diagram in which an operation cycle of a memory storage unit such as memory storage unit number 1, for example, is identified by time T.
- the time during which the memory is available to the processor is from time t o to t l while the time required to accomplish the refresh operation is identified by the interval from t1 to t2.
- FIG. 2B illustrates the case where two of the memory storage units have a similar time availability and retention time relationship. Illustrated is the case where both memories are started at time t o .
- FIG. 2C illustrates how by conventional techniques, two memory storage units would inevitably be caused to operate asynchronously.
- the processor requires access to the memory during the time interval defined as t c . Since the desired access interferes with the internally scheduled regeneration, a refresh will be taken by the memory at t o '.
- ⁇ t time frame
- the processor is permitted access to the memory unit. Note, however, that the time frame allotted for availability and the normally scheduled time for refresh has been shifted in time. Without the force refresh technique of the present invention, this selected memory storage unit would now be out of synchronism with the other memory storage units in the over all memory system.
- FIG. 3 is a more detailed block diagram of a system in accordance with the present invention.
- the present system includes a processor 10 and a plurality of memory storage units 12 and 14.
- Each of the memory storage units is operatively connected to and associated with the processor 10 by conventional address, control, and data buss lines.
- Memory storage unit 12 includes interface logic 20 which receives the address and control lines from the processor.
- Interface logic 20 performs the conventional address, decode, and drive function as well as the timing controls, etc. This is all well-known in the prior art as described in one or more of the cross-referenced patents.
- the data buss is connected to the plurality of memory arrays 22, 24, and 26 also in the conventional and well-known manner.
- the only modification to a standard memory storage unit 12 required by the present invention is the ability of refresh control 28 to accept a force refresh input.
- refresh control 28 also gets an oscillator (OSC) input from interface logic 20; this oscillator input usually coming from processor 10 via one of the control lines.
- OSC oscillator
- the array timing is schematically shown as being part of the interface logic and receiving a start refresh cycle timing signal (START) from refresh control 28 and providing a "refresh cycle complete” signal (COMP) to refresh control 28.
- Refresh control 28 also provides the refresh address to interface logic 20 which in turn applies the array address and necessary timing signals to the memories by way of the indicated lines.
- Memory storage unit 14 is intended to be identical in every respect to memory storage unit 12 and, as indicated, receives the same inputs from processor 10 including the identical force refresh signal.
- the individial blocks within memory storage unit 14 have been designated by prime notation to indicate their correspondence.
- refresh control 28 and 28' which will be described in greater detail hereinbelow.
- interrupt logic 30 provides signals to interrupt logic 30.
- signals typically include interrupt levels, and input output device (I/O) control lines and a data buss.
- Interrupt logic has outputs to various portions of the processor 10 as, for example, a program status word (PSW) swap to read only store control 34.
- PSW program status word
- Another output of interrupt logic 30 is connected to a processor data control 31 via the processor buss. It is the function of processor data control 31 to gate the information from the interrupt logic to other portions of the processor, as for example to instruction register 35 via the instruction buss. Alternatively, the process data control 31 gates data to the memory system via the data buss.
- data coming from the memory system via the data buss may either be gated to instruction register 35 via the instruction buss or to interrupt logic 30 via the processor buss. It is understood that data and control signals may be gated to other portions of the processor (not shown) as is well-known in the data processing art. Also, interrupt logic 30 may send output signals to other portions of processor 10 as for example, directly to read only store control 34.
- instruction register 35 transmits the instructions to instruction decoder 32 which provides an output to ROS control 34 as well as force regenerator 36.
- Force regenerator 36 also receives a clock input from the processor system clock (not shown) and provides a force refresh output to the memory system.
- Read only store control 34 is shown as having an OR gated input to show that a plurality of sources may provide inputs to the ROS control.
- instruction decoder 32 in addition to the previously indicated OP code, also provides a starting address (SI) to ROS control 34.
- the outputs of read only store control 34 are inputed to read only store 38 which then goes through its various cycles and by means of the control field output controls the serial operations within the processor.
- the "next address of ROS” that is, the next address within the read only store to be accessed, is inputed into ROS control 34. In this manner, the next designated operation is performed in read only store 38 and applied to the various devices within the processor as a control field.
- new instructions are received through the instruction decoder 32 or from interrupt logic 30 indicating either a new starting address (SI) or a new command such as PSW swap.
- memory storage units are accessed by means of memory address control 39 which receives an input from read only store control 34 and provides the address and control signal outputs to the memory system.
- Operations within the processor are, however, controlled by read only store 38 and a sequence of steps are normally carried out each time a new instruction is received into ROS control 34. It is predeterminable whether such a sequence of steps will require a memory operation or not, by a knowledge of the program and the nature of the particular instruction. For this reason, it is known as soon as a new instruction is received whether or not the memory system will remain idle for a period sufficient to perform the force regenerate function.
- the OP code is transmitted from the instruction decoder 32 to the force regenerator 36 which will generate a force refresh signal upon the occurrence of an OP code indicating an instruction which provides sufficient memory idle time.
- the force generator 36 is what has been added by the present invention to the otherwise conventional processor illustrated in FIG. 4.
- force regenerator 36 The details of one embodiment of force regenerator 36 are illustrated in FIG. 5.
- the OP code is decoded in decode 42 and provided to compare circuit 44. All the OP codes which have been predetermined to have sufficient memory idle time for memory refresh are stored in register 40.
- Compare circuit 44 compares the decoded OP code from decode 42 with all the OP codes stored in register 40 and if a compare is found, a refresh command signal is sent to AND circuit 46. Upon the occurrence of a clock input to AND circuit 46, a force refresh signal is transmitted to the memory units by means of driver 48.
- the force refresh signal transmitted to the memory storage unit is usually applied to a refresh control circuit 28 which is illustrated in greater detail in FIG. 6.
- a refresh counter 52 is typically stepped by an oscillator input.
- the refresh latch 54 is set and the array timing 20A is commanded to start a refresh cycle.
- the refresh latch is reset and the step address counter 56 begins to refresh the addresses within the memory storage unit.
- the refresh latch is reset while the refresh counter has been previously reset by an output from the refresh latch. At this point in time the memory storage unit becomes available to the processor until the next refresh is indicated by the count in the counter.
- a force refresh signal applied to OR circuit 50 provides the same command previously supplied by the refresh counter, causing the memory storage unit to be refreshed.
- the memory storage unit will still refresh in its customary manner.
- the array timing (conventional in memory storage units) has been previously indicated in FIG. 3 as being a portion of logic interface 20 and for this reason has been designated by reference numeral 20A.
- FIG. 7 Another technique for identifying when a force refresh command is to be sent to the memory system is illustrated in FIG. 7. Corresponding elements have been identified with corresponding reference numerals with a prime notation, isofar as practical.
- the instruction decoder 32 previously shown in FIG. 4 is illustrated as instruction decoder 32' in FIG. 7. It receives an input from instruction register 35' which includes an operation field (OP FIELD) and an operation extension (OP EXTENSION).
- OP FIELD operation field
- OP EXTENSION operation extension
- the instruction decoder provides an output to ROS control 34' in the conventional manner.
- the OP Extension includes a code as to whether the particular instruction requires a memory operation or not. If a memory operation is not required, instruction decoder 32' so indicates on its output line to AND circuit 46'. Upon an indication that a memory is not required and during the appropriate clock input, AND circuit 46' provides a force refresh signal to the memory system.
- a driver circuit 48' corresponding to the driver 48 in FIG. 5 would normally be used to transmit the force refresh signal from the processor to the memory system.
- FIG. 8 Another technique by which the memory idle time might be determined, when a force refresh operation should take place, is illustrated in FIG. 8.
- Instruction decoder 32" and instruction register 35" have again been designated with double prime notation inorder to signify the correspondence to previous drawing figures.
- the read only storage control 34" connected to the output of the instruction decoder and providing an output to the read only storage unit 38" have been designated with double prime notation.
- the read only store words are provided with an extra bit which flags those operations for which a memory is not required.
- the read only store 38" provides its normal output which is a control field controlling the operation of the entire processor.
- read only store 38 includes the next read only store address to the read only store control 34" because read only store 38" is normally programmed for a series of instruction steps.
- read only store 38 By the use of an extra bit in the memory words stored in the read only store 38", those operations that will not require access to the memory system for at least the length of time required to refresh the memory system are identified by this special bit.
- a force refresh is sent to the memory system by means of driver circuit 48".
- FIG. 9 illustrates a still further embodiment in which a plurality of processors 10 and 11 operate as a system with a plurality of memory units 12' and 14'.
- each processor 10 and 11 has a control and data connection to each of the memory units 12' and 14' while control and data lines also connect processor 10 and processor 11 to each other.
- one of them is designated as a maintenance processor.
- processor 10 is illustrated as the maintenance processor and makes the determination as to when neither processor 10 nor 11 requires a memory operation. In that event, a refresh signal is sent to all memory units in order to simultaneously force refresh all memory units.
- all processors could provide a force refresh input to an AND circuit, the output of the AND circuit refreshing all memories when all processors indicate that a memory operation is not required.
- the operation of the herein described system is substantially identical to the operation of data processing systems well-known in the art such as for example described in the cross-referenced patents.
- the present invention finds particular use in the so called “miniprocessor” and “microprocessor” areas in which processing is performed under the control of a read only store.
- operations are performed in series. Accordingly, a starting address (SI) selecting a particular series of operations in the read only store usually provides an indication whether there is time for a force refresh before a memory operation will be required. Every time a force refresh operation takes place, all the memory units in the system are synchronized optimizing the availability of all memory units to the processor(s).
- SI starting address
- time T is the memory cycle in which a dynamic memory is available to the processor from time t o to t l .
- the memory system must be refreshed.
- memory storage unit number 1 will be in the same time relationship as memory storage unit number 2 (as will all other memories units in the system) as illustrated in FIG. 2B.
- FIG. 2C it is possible for two memory units to get out of sequence. This is caused by the need for one of the memory units by a processor during an interval that interferes with normal refresh.
- FIG. 2C it is possible for two memory units to get out of sequence. This is caused by the need for one of the memory units by a processor during an interval that interferes with normal refresh.
- a refresh cycle ( ⁇ t) must be taken before the desired memory access cycle t c can take place. This automatically throws memory storage unit number two out of sequence with memory storage unit number one. By the present technique of force regeneration, this is less likely to occur since the memory will usually have undergone regeneration just prior to the time a memory cycle is to be taken. Furthermore, if the problem illustrated in FIG. 2C should occur, then during the very next memory idle time indicated within the processor, all memory storage units will again become synchronized with each other.
- the force refresh causing the synchronization of multiple memory units illustrated in FIG. 2B is accomplished in accordance with the structure illustrated in FIG. 3.
- Processor 10 and memory storage units 12 and 14 operate in their conventional and well-known manner.
- the force refresh line from processor 10 to each of memory storage units 12 and 14 is added.
- processor 10 determines that the memory will not be needed for a time sufficient for refreshing, a force refresh signal will be transmitted to memory storage unit 12 and 14, simultaneously refreshing them.
- This force refresh signal will override the internal refresh provided by refresh control 28 and 28' and will render the memory storage units available to processor 10 during subsequently required memory cycles.
- processor 10 requires memory operations for a period of time in excess of the retention time of the memory storage units, then, of course, the internal refresh controls 28 and 28' will provide the necessary refresh. During a subsequent memory idle cycle in processor 10, however, the force refresh line will again regenerate all memory storage units in synchronism. Thus, the plurality of memory storage units which operate asynchronously in the prior art will now be synchronously available to processor 10.
- processor 10 determines that a force refresh is to take place is illustrated in FIG. 4.
- Instructions would normally be stored in an instruction register 36 prior to application to instruction decoder 32.
- the instruction decoder 32 provides the starting address (SI) to an OR circuit within ROS control 34.
- instruction decoder 32 also provides a decoded OP code signal to force regenerator 36 which generates the force refresh signal.
- Force regenerator 36 also receives a clock input from the processor 10 system clock (not shown) so that any force refresh signals are in synchronism with the remainder of the system.
- ROS control 34 provides an output to read only store 38, which will then go through a sequence of addresses "next address of ROS" inputted to another input of the OR circuit of ROS control 34. During this time, memory system operations might not be required. In such a case, the OP code received by force regenerator 36 will cause it to transmit a "force refresh" signal to the memory system.
- force regenerator circuit 36 may include a storage of all the OP codes which do not require memory operations and which are of sufficient duration to permit a force refreshing of memory. These OP codes may be stored in register 40 for example.
- the incoming OP code is decoded by decode circuit 42.
- the output of decode circuit 42 is compared with each of the OP codes within register 40 in compare circuit 44.
- Register 40 may be of the recirculating type, continually presenting its stored OP codes to compare circuit 44.
- the force refresh output is received at OR circuit 50 of refresh control 28 as illustrated in FIG. 6.
- Refresh control 28 receives another input at refresh counter 52. This other input is an oscillator input from the oscillator usually within processor 10 (not shown).
- the output of refresh counter 52 is also provided to OR circuit 50 which provides an output to refresh latch 54.
- Refresh latch 54 provides an output to the array timing circuit 20A and also to the reset input of refresh counter 52.
- the array timing 20A provides a reset output to refresh latch 54 and also steps address counter 56 providing the address to be refreshed to interface logic 20 which in turn passes it on to the appropriate memory arrays.
- the modified portion of refresh control 28 as depicted in FIG. 6 consists of OR circuit 50 which provides an override by setting refresh latch 54 and resetting refresh counter 52 without an output from refresh counter 52.
- the present invention finds use as a diagnostic tool in that the force refresh signal can be used to find various faults such as, for example, a faulty clock.
- the force refresh signal can be used to find various faults such as, for example, a faulty clock.
- the counter of the memory storage units is set for a predetermined count, such time intervals might exceed the retention time of the memory units when the supply voltage is lowered.
- the processor unit can be used to provide more frequent refresh operations to prevent loss of data through the force refresh line.
- Another useful feature of the present invention is that when the system is first started up, the force refresh line may be used to exercise the memory storage unit prior to actual operation. The system then provides reliable operation from the time actual programs are run.
- the present invention has a special advantage for controllers in which operations are performed in series and different time length operations are performed. This makes it relatively simple at the beginning of a particular operation to determine whether a sufficient length of time will elapse during which a memory is not required. Such available time periods can be readily flagged, as described hereinabove, and are ideally adapted to force refresh memory storage units.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Hardware Redundancy (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/736,969 US4172282A (en) | 1976-10-29 | 1976-10-29 | Processor controlled memory refresh |
JP52100689A JPS6011394B2 (ja) | 1976-10-29 | 1977-08-24 | デ−タ処理システム |
GB35573/77A GB1542772A (en) | 1976-10-29 | 1977-08-24 | Data processing systems |
DE19772746064 DE2746064A1 (de) | 1976-10-29 | 1977-10-13 | Datenspeicher mit auffrischung |
FR7733077A FR2371747A1 (fr) | 1976-10-29 | 1977-10-24 | Dispositif de regeneration de memoire dans un systeme de traitement de donnees |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/736,969 US4172282A (en) | 1976-10-29 | 1976-10-29 | Processor controlled memory refresh |
Publications (1)
Publication Number | Publication Date |
---|---|
US4172282A true US4172282A (en) | 1979-10-23 |
Family
ID=24962073
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US05/736,969 Expired - Lifetime US4172282A (en) | 1976-10-29 | 1976-10-29 | Processor controlled memory refresh |
Country Status (5)
Country | Link |
---|---|
US (1) | US4172282A (de) |
JP (1) | JPS6011394B2 (de) |
DE (1) | DE2746064A1 (de) |
FR (1) | FR2371747A1 (de) |
GB (1) | GB1542772A (de) |
Cited By (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1980001425A1 (en) * | 1979-01-08 | 1980-07-10 | Ncr Co | Control circuit for refreshing a dynamic memory |
EP0013697A1 (de) * | 1978-12-26 | 1980-08-06 | International Business Machines Corporation | Auffrischung benötigendes seitenorganisiertes Speichersystem |
EP0017479A1 (de) * | 1979-04-02 | 1980-10-15 | Fujitsu Limited | Regenerationssteuergerät für einen Speicher |
EP0033673A2 (de) * | 1980-01-17 | 1981-08-12 | COMPAGNIE INTERNATIONALE POUR L'INFORMATIQUE CII - HONEYWELL BULL (dite CII-HB) | Regenerierungsverfahren für ein MOS-Speichersystem und entsprechende Steuerschaltung |
US4316248A (en) * | 1978-12-06 | 1982-02-16 | Data General Corporation | Memory refresh means including means for providing refresh addresses during power failures |
US4317169A (en) * | 1979-02-14 | 1982-02-23 | Honeywell Information Systems Inc. | Data processing system having centralized memory refresh |
EP0182353A2 (de) * | 1984-11-19 | 1986-05-28 | Fujitsu Limited | Auf einem Halbleitersubstrat formierter RAM, mit einer in Submatrizen unterteilten Speichermatrix |
US4621320A (en) * | 1983-10-24 | 1986-11-04 | Sperry Corporation | Multi-user read-ahead memory |
US4625296A (en) * | 1984-01-17 | 1986-11-25 | The Perkin-Elmer Corporation | Memory refresh circuit with varying system transparency |
US4631701A (en) * | 1983-10-31 | 1986-12-23 | Ncr Corporation | Dynamic random access memory refresh control system |
EP0226929A2 (de) * | 1985-12-06 | 1987-07-01 | Nec Corporation | Signaleingangsschaltung mit Signalverriegelungsfunktion |
US4700330A (en) * | 1985-10-30 | 1987-10-13 | Digital Equipment Corporation | Memory for a digital data processing system including circuit for controlling refresh operations during power-up and power-down conditions |
US4701843A (en) * | 1985-04-01 | 1987-10-20 | Ncr Corporation | Refresh system for a page addressable memory |
US4706221A (en) * | 1983-01-31 | 1987-11-10 | Sharp Kabushiki Kaisha | Refreshing of dynamic RAM |
US4884191A (en) * | 1987-02-24 | 1989-11-28 | Convex Computer Corporation | Memory array unit for computer |
US4924381A (en) * | 1984-06-11 | 1990-05-08 | Nec Corporation | Microprocessor having a dynamic memory refresh circuit |
US4989180A (en) * | 1989-03-10 | 1991-01-29 | Board Of Regents, The University Of Texas System | Dynamic memory with logic-in-refresh |
EP0437158A2 (de) * | 1989-12-13 | 1991-07-17 | International Business Machines Corporation | Auffrichungspuffer für Speicherkarte |
US5208779A (en) * | 1991-04-15 | 1993-05-04 | Micron Technology, Inc. | Circuit for providing synchronous refresh cycles in self-refreshing interruptable DRAMs |
US5229969A (en) * | 1991-04-15 | 1993-07-20 | Micron Technology, Inc. | Method for synchronizing refresh cycles in self-refreshing DRAMs having timing circuit shutdown |
US5229970A (en) * | 1991-04-15 | 1993-07-20 | Micron Technology, Inc. | Circuit for synchronizing refresh cycles in self-refreshing drams having timing circuit shutdown |
US5251177A (en) * | 1989-01-23 | 1993-10-05 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device having an improved refresh operation |
US5321697A (en) * | 1992-05-28 | 1994-06-14 | Cray Research, Inc. | Solid state storage device |
US5329186A (en) * | 1990-11-28 | 1994-07-12 | Micron Technology, Inc. | CMOS bootstrapped output driver method and circuit |
US5335201A (en) * | 1991-04-15 | 1994-08-02 | Micron Technology, Inc. | Method for providing synchronous refresh cycles in self-refreshing interruptable DRAMs |
US5335202A (en) * | 1993-06-29 | 1994-08-02 | Micron Semiconductor, Inc. | Verifying dynamic memory refresh |
US5617551A (en) * | 1992-09-18 | 1997-04-01 | New Media Corporation | Controller for refreshing a PSRAM using individual automatic refresh cycles |
US5651131A (en) * | 1991-12-18 | 1997-07-22 | Sun Microsystems, Inc. | Refreshing a dynamic random access memory utilizing a mandatory or optional refresh |
US5689677A (en) * | 1995-06-05 | 1997-11-18 | Macmillan; David C. | Circuit for enhancing performance of a computer for personal use |
US5758148A (en) * | 1989-03-10 | 1998-05-26 | Board Of Regents, The University Of Texas System | System and method for searching a data base using a content-searchable memory |
US5777608A (en) * | 1989-03-10 | 1998-07-07 | Board Of Regents, The University Of Texas System | Apparatus and method for in-parallel scan-line graphics rendering using content-searchable memories |
US5933381A (en) * | 1997-09-25 | 1999-08-03 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor integrated circuit having DRAM mounted on semiconductor chip |
US6148034A (en) * | 1996-12-05 | 2000-11-14 | Linden Technology Limited | Apparatus and method for determining video encoding motion compensation vectors |
US6178130B1 (en) * | 1997-10-10 | 2001-01-23 | Rambus Inc. | Apparatus and method for refreshing subsets of memory devices in a memory system |
US6195742B1 (en) * | 1991-02-28 | 2001-02-27 | Hitachi, Ltd. | Semiconductor multi-chip module |
US6446159B2 (en) * | 1997-06-12 | 2002-09-03 | Matsushita Electric Industrial Co., Ltd. | Semiconductor circuit and method of controlling the same |
US20040151051A1 (en) * | 2003-02-05 | 2004-08-05 | Renesas Technology Corporation | Semiconductor memory device having easily redesigned memory capacity |
US6941415B1 (en) * | 2000-08-21 | 2005-09-06 | Micron Technology, Inc. | DRAM with hidden refresh |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4387423A (en) * | 1979-02-16 | 1983-06-07 | Honeywell Information Systems Inc. | Microprogrammed system having single microstep apparatus |
JPS58171788A (ja) * | 1982-03-31 | 1983-10-08 | Fujitsu Ltd | リフレツシユ制御方式 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
US3541530A (en) * | 1968-01-15 | 1970-11-17 | Ibm | Pulsed power four device memory cell |
US3748651A (en) * | 1972-02-16 | 1973-07-24 | Cogar Corp | Refresh control for add-on semiconductor memory |
US3800295A (en) * | 1971-12-30 | 1974-03-26 | Ibm | Asynchronously operated memory system |
US3810129A (en) * | 1972-10-19 | 1974-05-07 | Ibm | Memory system restoration |
US4006468A (en) * | 1973-08-06 | 1977-02-01 | Honeywell Information Systems, Inc. | Dynamic memory initializing apparatus |
US4028675A (en) * | 1973-05-14 | 1977-06-07 | Hewlett-Packard Company | Method and apparatus for refreshing semiconductor memories in multi-port and multi-module memory system |
US4074355A (en) * | 1976-08-16 | 1978-02-14 | Texas Instruments Incorporated | Digital microprocessor system with shared decode |
US4084154A (en) * | 1975-05-01 | 1978-04-11 | Burroughs Corporation | Charge coupled device memory system with burst mode |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3737879A (en) * | 1972-01-05 | 1973-06-05 | Mos Technology Inc | Self-refreshing memory |
-
1976
- 1976-10-29 US US05/736,969 patent/US4172282A/en not_active Expired - Lifetime
-
1977
- 1977-08-24 JP JP52100689A patent/JPS6011394B2/ja not_active Expired
- 1977-08-24 GB GB35573/77A patent/GB1542772A/en not_active Expired
- 1977-10-13 DE DE19772746064 patent/DE2746064A1/de not_active Withdrawn
- 1977-10-24 FR FR7733077A patent/FR2371747A1/fr active Granted
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
US3541530A (en) * | 1968-01-15 | 1970-11-17 | Ibm | Pulsed power four device memory cell |
US3800295A (en) * | 1971-12-30 | 1974-03-26 | Ibm | Asynchronously operated memory system |
US3748651A (en) * | 1972-02-16 | 1973-07-24 | Cogar Corp | Refresh control for add-on semiconductor memory |
US3810129A (en) * | 1972-10-19 | 1974-05-07 | Ibm | Memory system restoration |
US3811117A (en) * | 1972-10-19 | 1974-05-14 | Ibm | Time ordered memory system and operation |
US4028675A (en) * | 1973-05-14 | 1977-06-07 | Hewlett-Packard Company | Method and apparatus for refreshing semiconductor memories in multi-port and multi-module memory system |
US4006468A (en) * | 1973-08-06 | 1977-02-01 | Honeywell Information Systems, Inc. | Dynamic memory initializing apparatus |
US4084154A (en) * | 1975-05-01 | 1978-04-11 | Burroughs Corporation | Charge coupled device memory system with burst mode |
US4074355A (en) * | 1976-08-16 | 1978-02-14 | Texas Instruments Incorporated | Digital microprocessor system with shared decode |
Cited By (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4316248A (en) * | 1978-12-06 | 1982-02-16 | Data General Corporation | Memory refresh means including means for providing refresh addresses during power failures |
EP0013697A1 (de) * | 1978-12-26 | 1980-08-06 | International Business Machines Corporation | Auffrischung benötigendes seitenorganisiertes Speichersystem |
US4249247A (en) * | 1979-01-08 | 1981-02-03 | Ncr Corporation | Refresh system for dynamic RAM memory |
WO1980001425A1 (en) * | 1979-01-08 | 1980-07-10 | Ncr Co | Control circuit for refreshing a dynamic memory |
US4317169A (en) * | 1979-02-14 | 1982-02-23 | Honeywell Information Systems Inc. | Data processing system having centralized memory refresh |
EP0017479A1 (de) * | 1979-04-02 | 1980-10-15 | Fujitsu Limited | Regenerationssteuergerät für einen Speicher |
US4403308A (en) * | 1980-01-17 | 1983-09-06 | Cii Honeywell Bull | Apparatus for and method of refreshing MOS memory |
EP0033673A3 (en) * | 1980-01-17 | 1981-08-19 | Compagnie Internationale Pour L'informatique Cii - Honeywell Bull (Dite Cii-Hb) | Mos circuit memory refresh method and corresponding control circuit |
EP0033673A2 (de) * | 1980-01-17 | 1981-08-12 | COMPAGNIE INTERNATIONALE POUR L'INFORMATIQUE CII - HONEYWELL BULL (dite CII-HB) | Regenerierungsverfahren für ein MOS-Speichersystem und entsprechende Steuerschaltung |
US4706221A (en) * | 1983-01-31 | 1987-11-10 | Sharp Kabushiki Kaisha | Refreshing of dynamic RAM |
US4621320A (en) * | 1983-10-24 | 1986-11-04 | Sperry Corporation | Multi-user read-ahead memory |
US4631701A (en) * | 1983-10-31 | 1986-12-23 | Ncr Corporation | Dynamic random access memory refresh control system |
US4625296A (en) * | 1984-01-17 | 1986-11-25 | The Perkin-Elmer Corporation | Memory refresh circuit with varying system transparency |
US4924381A (en) * | 1984-06-11 | 1990-05-08 | Nec Corporation | Microprocessor having a dynamic memory refresh circuit |
EP0182353A3 (en) * | 1984-11-19 | 1989-08-16 | Fujitsu Limited | Random access memory device formed on a semiconductor substrate having an array of memory cells divided in sub-arrays |
EP0182353A2 (de) * | 1984-11-19 | 1986-05-28 | Fujitsu Limited | Auf einem Halbleitersubstrat formierter RAM, mit einer in Submatrizen unterteilten Speichermatrix |
US4701843A (en) * | 1985-04-01 | 1987-10-20 | Ncr Corporation | Refresh system for a page addressable memory |
US4700330A (en) * | 1985-10-30 | 1987-10-13 | Digital Equipment Corporation | Memory for a digital data processing system including circuit for controlling refresh operations during power-up and power-down conditions |
EP0226929A3 (en) * | 1985-12-06 | 1989-04-26 | Nec Corporation | Signal input circuit having a signal latch function |
EP0226929A2 (de) * | 1985-12-06 | 1987-07-01 | Nec Corporation | Signaleingangsschaltung mit Signalverriegelungsfunktion |
US4884191A (en) * | 1987-02-24 | 1989-11-28 | Convex Computer Corporation | Memory array unit for computer |
US5251177A (en) * | 1989-01-23 | 1993-10-05 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device having an improved refresh operation |
US4989180A (en) * | 1989-03-10 | 1991-01-29 | Board Of Regents, The University Of Texas System | Dynamic memory with logic-in-refresh |
US5184325A (en) * | 1989-03-10 | 1993-02-02 | Board Of Regents, The University Of Texas System | Dynamic associative memory with logic-in-refresh |
US5777608A (en) * | 1989-03-10 | 1998-07-07 | Board Of Regents, The University Of Texas System | Apparatus and method for in-parallel scan-line graphics rendering using content-searchable memories |
US5758148A (en) * | 1989-03-10 | 1998-05-26 | Board Of Regents, The University Of Texas System | System and method for searching a data base using a content-searchable memory |
US5694406A (en) * | 1989-03-10 | 1997-12-02 | Board Of Regents, The University Of Texas System | Parallel associative processor formed from modified dram |
EP0437158A2 (de) * | 1989-12-13 | 1991-07-17 | International Business Machines Corporation | Auffrichungspuffer für Speicherkarte |
EP0437158A3 (en) * | 1989-12-13 | 1991-12-11 | International Business Machines Corporation | Memory card refresh buffer |
US5193165A (en) * | 1989-12-13 | 1993-03-09 | International Business Machines Corporation | Memory card refresh buffer |
US5329186A (en) * | 1990-11-28 | 1994-07-12 | Micron Technology, Inc. | CMOS bootstrapped output driver method and circuit |
US5349247A (en) * | 1990-11-28 | 1994-09-20 | Micron Technology, Inc. | Enhancement circuit and method for ensuring diactuation of a switching device |
US7233534B2 (en) | 1991-02-28 | 2007-06-19 | Hitachi, Ltd. | Electronic circuit package |
US20080303175A1 (en) * | 1991-02-28 | 2008-12-11 | Nobuyasu Kanekawa | Electronic circuit package |
US7701743B2 (en) | 1991-02-28 | 2010-04-20 | Rising Silicon, Inc. | Electronic circuit package |
US7425763B2 (en) | 1991-02-28 | 2008-09-16 | Hitachi, Ltd. | Electronic circuit package |
US20070158814A1 (en) * | 1991-02-28 | 2007-07-12 | Nobuyasu Kanekawa | Electronic circuit package |
US6195742B1 (en) * | 1991-02-28 | 2001-02-27 | Hitachi, Ltd. | Semiconductor multi-chip module |
US7120069B2 (en) | 1991-02-28 | 2006-10-10 | Hitachi, Ltd. | Electronic circuit package |
US20040164324A1 (en) * | 1991-02-28 | 2004-08-26 | Nobuyasu Kanekawa | Electronic circuit package |
US6728904B2 (en) | 1991-02-28 | 2004-04-27 | Hitachi, Ltd. | Electronic circuit package |
US20030156441A1 (en) * | 1991-02-28 | 2003-08-21 | Nobuyasu Kanekawa | Electronic circuit package |
US6584004B2 (en) | 1991-02-28 | 2003-06-24 | Hitachi, Ltd. | Electronic circuit package |
US6223273B1 (en) * | 1991-02-28 | 2001-04-24 | Hitachi, Ltd. | Electronic circuit package |
US5229969A (en) * | 1991-04-15 | 1993-07-20 | Micron Technology, Inc. | Method for synchronizing refresh cycles in self-refreshing DRAMs having timing circuit shutdown |
US5208779A (en) * | 1991-04-15 | 1993-05-04 | Micron Technology, Inc. | Circuit for providing synchronous refresh cycles in self-refreshing interruptable DRAMs |
US5335201A (en) * | 1991-04-15 | 1994-08-02 | Micron Technology, Inc. | Method for providing synchronous refresh cycles in self-refreshing interruptable DRAMs |
US5229970A (en) * | 1991-04-15 | 1993-07-20 | Micron Technology, Inc. | Circuit for synchronizing refresh cycles in self-refreshing drams having timing circuit shutdown |
US5651131A (en) * | 1991-12-18 | 1997-07-22 | Sun Microsystems, Inc. | Refreshing a dynamic random access memory utilizing a mandatory or optional refresh |
US5321697A (en) * | 1992-05-28 | 1994-06-14 | Cray Research, Inc. | Solid state storage device |
US5617551A (en) * | 1992-09-18 | 1997-04-01 | New Media Corporation | Controller for refreshing a PSRAM using individual automatic refresh cycles |
US5335202A (en) * | 1993-06-29 | 1994-08-02 | Micron Semiconductor, Inc. | Verifying dynamic memory refresh |
US5689677A (en) * | 1995-06-05 | 1997-11-18 | Macmillan; David C. | Circuit for enhancing performance of a computer for personal use |
US6148034A (en) * | 1996-12-05 | 2000-11-14 | Linden Technology Limited | Apparatus and method for determining video encoding motion compensation vectors |
US6446159B2 (en) * | 1997-06-12 | 2002-09-03 | Matsushita Electric Industrial Co., Ltd. | Semiconductor circuit and method of controlling the same |
US5933381A (en) * | 1997-09-25 | 1999-08-03 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor integrated circuit having DRAM mounted on semiconductor chip |
US6178130B1 (en) * | 1997-10-10 | 2001-01-23 | Rambus Inc. | Apparatus and method for refreshing subsets of memory devices in a memory system |
US20060013054A1 (en) * | 2000-08-21 | 2006-01-19 | Ryan Kevin J | DRAM with hidden refresh |
US20070011397A1 (en) * | 2000-08-21 | 2007-01-11 | Ryan Kevin J | Dram with hidden refresh |
US7117299B2 (en) | 2000-08-21 | 2006-10-03 | Micron Technology, Inc. | DRAM with hidden refresh |
US6941415B1 (en) * | 2000-08-21 | 2005-09-06 | Micron Technology, Inc. | DRAM with hidden refresh |
US7009906B2 (en) * | 2003-02-05 | 2006-03-07 | Renesas Technology Corp. | Semiconductor memory device having easily redesigned memory capacity |
US20040151051A1 (en) * | 2003-02-05 | 2004-08-05 | Renesas Technology Corporation | Semiconductor memory device having easily redesigned memory capacity |
Also Published As
Publication number | Publication date |
---|---|
FR2371747B1 (de) | 1980-12-19 |
JPS5355918A (en) | 1978-05-20 |
JPS6011394B2 (ja) | 1985-03-25 |
GB1542772A (en) | 1979-03-28 |
DE2746064A1 (de) | 1978-05-11 |
FR2371747A1 (fr) | 1978-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4172282A (en) | Processor controlled memory refresh | |
US4691303A (en) | Refresh system for multi-bank semiconductor memory | |
US5335201A (en) | Method for providing synchronous refresh cycles in self-refreshing interruptable DRAMs | |
EP0432575B1 (de) | Datenprozessor mit Wartezustandsteuerungseinheit | |
CN1078820A (zh) | 用于检测半导体存贮器件的更新地址信号的电路 | |
US5583823A (en) | Dram refresh circuit | |
US5208779A (en) | Circuit for providing synchronous refresh cycles in self-refreshing interruptable DRAMs | |
US4238842A (en) | LARAM Memory with reordered selection sequence for refresh | |
KR20220062710A (ko) | 로우 해머를 완화시키는 메모리 장치 및 이를 이용하는 반도체 시스템 | |
EP0055623B1 (de) | Direkter Speicherzugriffbetrieb für ein Speichersystem mit hoher Geschwindigkeit | |
US4918650A (en) | Memory control interface apparatus | |
US4855901A (en) | Apparatus for transferring data between a microprocessor and a memory | |
US4347589A (en) | Refresh counter test | |
US5229969A (en) | Method for synchronizing refresh cycles in self-refreshing DRAMs having timing circuit shutdown | |
EP0415433B1 (de) | Steuersystem für Hauptspeicher | |
US4040122A (en) | Method and apparatus for refreshing a dynamic memory by sequential transparent readings | |
US5917839A (en) | Apparatus and method for a read-modify-write operation in a dynamic random access memory | |
CA1172316A (en) | Refresh counter test | |
JP3629056B2 (ja) | ランダムアクセスメモリのメモリチップ拡張制御方法及び装置 | |
JPH08115593A (ja) | 半導体記憶装置、及びデータ処理装置 | |
KR0184510B1 (ko) | 동기식 반도체 메모리의 리프레쉬 제어회로 및 그 제어방법 | |
US5325515A (en) | Single-component memory controller utilizing asynchronous state machines | |
JPH0140432B2 (de) | ||
JPH11110965A (ja) | 同期式ランダムアクセスメモリの制御方法とその装置、及びそれを有する同期式ランダムアクセスメモリ装置 | |
JP2548206B2 (ja) | 半導体記憶装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: CEPEDE MACHINE SYSTEME, FRANCE Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:R2 MECANIQUE;REEL/FRAME:012365/0655 Effective date: 19930930 |
|
AS | Assignment |
Owner name: ROUCHAUD-GENDRON, FRANCE Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:CEPEDE MACHINE SYSTEME;REEL/FRAME:012447/0183 Effective date: 19970506 |
|
AS | Assignment |
Owner name: ROUCHAUD S.A., FRANCE Free format text: CHANGE OF NAME;ASSIGNOR:ROUCHAUD-GENDRON;REEL/FRAME:012530/0130 Effective date: 20010629 |