US4066982A - Oscillator circuit comprising integrated MIS field-effect transistors - Google Patents

Oscillator circuit comprising integrated MIS field-effect transistors Download PDF

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Publication number
US4066982A
US4066982A US05/776,674 US77667477A US4066982A US 4066982 A US4066982 A US 4066982A US 77667477 A US77667477 A US 77667477A US 4066982 A US4066982 A US 4066982A
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US
United States
Prior art keywords
oscillator circuit
transistor
source
insulated
oscillator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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US05/776,674
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English (en)
Inventor
Klaus D. Strohl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ITT Inc
Original Assignee
ITT Industries Inc
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Filing date
Publication date
Priority claimed from DE19762613421 external-priority patent/DE2613421C2/de
Application filed by ITT Industries Inc filed Critical ITT Industries Inc
Application granted granted Critical
Publication of US4066982A publication Critical patent/US4066982A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/011—Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/03—Astable circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/354—Astable circuits

Definitions

  • This invention relates to an oscillator circuit consisting of an RS flip-flop with integrated insulated gate (MIS) field-effect transistors whose inputs, each with a capacitor, are connected to ground, and which is capable of being controlled via a controlled inverter.
  • MIS insulated gate
  • an oscillator circuit including temperature compensating means and means for coupling said oscillator circuit to an external power source having an internal resistance
  • an RS flip-flop having first and second inputs; first and second capacitors for coupling said first and second inputs respectively to ground; first and second inverters, each containing a load transistor, said first and second inputs each controlled by one of said load transistors; and a first transistor for providing temperature compensation of the oscillator frequency, said first transistor having a source electrode coupled to ground, a gate electrode coupled to a first source of supply voltage and a drain electrode coupled to the gate electrodes of said load transistors and to said external power source, said first transistor having a drain-source resistance in the order of the internal resistance of said external power source.
  • FIG. 1 shows the oscillator circuit according to the invention
  • FIG. 2 shows the circuit of a preferred embodiment of the external voltage source to be used in the oscillator circuit according to the invention.
  • FIG. 3 serves to explain the temperature compensation by the circuit arrangements according to the invention.
  • FIG. 1 within the dot-and-dash line 1, shows the integrated RS flip-flop circuit B which, according to the invention, and for compensating for the temperature dependence of the oscillator frequency, is provided with an insulated-gate field-effect transistor T 1 whose drain electrode D is connected to the two gate electrodes of the controlled load transistors T 2 and T 3 , and whose gate electrode is applied to the supply voltage U DD .
  • the circuit of the integrated RS flip-flop is well known in the art and, together with the inverters T 2 , T 9 and T 3 , T 10 operates as an oscillator.
  • This RS flip-flop used as an oscillator comprises parallel-connected pairs of insulated-gate field-effect transistors T 4 , T 5 , T 6 , T 7 which are galvanically cross-coupled.
  • the voltage supply of the two parallel-connected pairs of insulated-gate field-effect transistors is effected each time by one insulated-gate field-effect transistor T 11 ; T 12 whose gate electrodes are applied to the voltage supply U DD .
  • the two inputs of the RS-flip-flop circuit corresponding to the gate electrodes of those insulated-gate field-effect transistors T 4 and T 7 whose gate electrodes are not cross-coupled to the drain electrodes of the parallel-connected pairs of insulated-gate field-effect transistors T 4 , T 5 ; T 6 , T 7 are connected to one common connecting point.
  • Each series connection of two insulated gate field-effect transistors T 2 and T 9 or T 3 and T 10 form one inverter.
  • the gate electrodes of the two controlled insulated-gate load transistors (MISFETs) T 2 and T 3 are together applied to the drain electrode D of the insulated-gate field-effect transistor T 1 which effects the temperature compensation of the oscillator frequency of the RS flip-flop circuit.
  • the gate electrodes of the two other insulated-gate field-effect transistors T 9 and T 10 are applied to the cross-coupled gate electrodes of the insulated-gate field-effect transistors of the aforementioned parallel arrangements of the RS flip-flop.
  • the oscillator consists of an RS flip-flop whose input signals are produced by two charging circuits R.C A and R.C B .
  • the frequency is adjusted by a control signal which is applied from an external voltage source A to the drain electrode of the insulated-gate field-effect transistor T 1 which effects the temperature compensation. In this way the time constant of the RC-circuit is varied, thus controlling the switch over (trigger) point of the flip-flop circuit.
  • any increase in temperature causes the current I to become smaller, accordingly, the switchover (trigger) point of the flip-flop circuit is reached later and, consequently, the frequency is lower.
  • the insulated-gate field-effect transistor T 1 which is provided for compensating the oscillator frequency, and which represents a temperature-dependent resistor
  • the source of voltage consists of an ohmic voltage divider which is arranged between U DD and the ground potential.
  • the mode of operation of the temperature compensation is due to the fact that the reduction of the charging current I as caused by the increased temperature, is compensated for by increasing the control voltage at the drain electrode of the insulated-gate field-effect transistor T 1 .
  • the control voltage is adjusted at R 4 .
  • the frequency variation ⁇ f is plotted in kHz in dependence upon the ambient temperature T U in ° C.

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
US05/776,674 1976-03-30 1977-03-11 Oscillator circuit comprising integrated MIS field-effect transistors Expired - Lifetime US4066982A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19762613421 DE2613421C2 (de) 1976-03-30 Oszillatorschaltung mit integrierten Isolierschicht-Feldeffekttransistoren
DT2613421 1976-03-30

Publications (1)

Publication Number Publication Date
US4066982A true US4066982A (en) 1978-01-03

Family

ID=5973789

Family Applications (1)

Application Number Title Priority Date Filing Date
US05/776,674 Expired - Lifetime US4066982A (en) 1976-03-30 1977-03-11 Oscillator circuit comprising integrated MIS field-effect transistors

Country Status (5)

Country Link
US (1) US4066982A (cg-RX-API-DMAC10.html)
JP (1) JPS601975B2 (cg-RX-API-DMAC10.html)
FR (1) FR2346902A1 (cg-RX-API-DMAC10.html)
GB (1) GB1529115A (cg-RX-API-DMAC10.html)
IT (1) IT1084916B (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340871A (en) * 1979-09-14 1982-07-20 Texas Instruments Incorporated Low power oscillator having clamping transistors across its timing capacitors
EP1049256A1 (en) * 1999-04-30 2000-11-02 STMicroelectronics S.r.l. Low supply voltage oscillator circuit, particularly of the CMOS type

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3975649A (en) * 1974-01-16 1976-08-17 Hitachi, Ltd. Electronic circuit using field effect transistor with compensation means
US4015219A (en) * 1974-01-16 1977-03-29 Hitachi, Ltd. Electronic circuit using field effect transistor with compensation means

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3708757A (en) * 1971-07-07 1973-01-02 Gen Instrument Corp Oscillator loop including two double valued mosfet delay networks
GB1494491A (en) * 1974-01-16 1977-12-07 Hitachi Ltd Compensation means in combination with a pulse generator circuit utilising field effect transistors
US3995232A (en) * 1975-05-02 1976-11-30 National Semiconductor Corporation Integrated circuit oscillator

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3975649A (en) * 1974-01-16 1976-08-17 Hitachi, Ltd. Electronic circuit using field effect transistor with compensation means
US4015219A (en) * 1974-01-16 1977-03-29 Hitachi, Ltd. Electronic circuit using field effect transistor with compensation means

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340871A (en) * 1979-09-14 1982-07-20 Texas Instruments Incorporated Low power oscillator having clamping transistors across its timing capacitors
EP1049256A1 (en) * 1999-04-30 2000-11-02 STMicroelectronics S.r.l. Low supply voltage oscillator circuit, particularly of the CMOS type
US6362697B1 (en) 1999-04-30 2002-03-26 Stmicroelectronics S.R.L. Low supply voltage relaxation oscillator having current mirror transistors supply for capacitors

Also Published As

Publication number Publication date
FR2346902B1 (cg-RX-API-DMAC10.html) 1983-02-25
DE2613421B1 (de) 1977-07-07
IT1084916B (it) 1985-05-28
JPS601975B2 (ja) 1985-01-18
GB1529115A (en) 1978-10-18
FR2346902A1 (fr) 1977-10-28
JPS52119153A (en) 1977-10-06

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