US4012761A - Self-protected semiconductor device - Google Patents

Self-protected semiconductor device Download PDF

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Publication number
US4012761A
US4012761A US05/677,876 US67787676A US4012761A US 4012761 A US4012761 A US 4012761A US 67787676 A US67787676 A US 67787676A US 4012761 A US4012761 A US 4012761A
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Prior art keywords
thyristor
section
pilot thyristor
pilot
gate
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Expired - Lifetime
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US05/677,876
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English (en)
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Armand P. Ferro
Victor A. K. Temple
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General Electric Co
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General Electric Co
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Priority to US05/677,876 priority Critical patent/US4012761A/en
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Publication of US4012761A publication Critical patent/US4012761A/en
Priority to CA276,317A priority patent/CA1089111A/en
Priority to SE7704360A priority patent/SE424485B/xx
Priority to FR7711380A priority patent/FR2349216A1/fr
Priority to DE2716874A priority patent/DE2716874C2/de
Priority to JP4361577A priority patent/JPS52138880A/ja
Priority to GB16215/77A priority patent/GB1515836A/en
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Definitions

  • This invention relates in general to semiconductor switches and more particularly to self-protected thyristors of the type suitable for controlling the flow of current in a high voltage electrical circuit.
  • a thyristor device will be caused to turn on by the application of a gate signal thereto at a voltage lower than the voltage which would otherwise cause the destruction of the device.
  • This type of protection while in many ways effective, suffers from several limitations which the instant invention overcomes. For example, since the main device and protective devices are practically, if not necessarily fabricated independently, it is often the case that they will have different and independent tolerances. It is often times necessary, therefore, to provide a breakdown voltage in the protective device which is somewhat lower than would be desired in an ideal case. This allows for variations both in the protected device and in the protective device.
  • a self-protected thyristor structure having an auxiliary gate region peripherally located with respect to the semiconductor device so as to provide for the controlled turn-on of the device at the edge thereof in response to increasing edge current densities at the onset of avalanche breakdown.
  • an auxiliary pilot thyristor is provided substantially surrounding the main thyristor structure and including an annular gate electrode surrounding the auxiliary pilot thyristor structure to insure that turn-on occurs substantially simultaneously throughout the extent of the pilot thyristor region.
  • an auxiliary pilot thyristor is provided at the circumference of a substantially disk shaped semiconductor device having a gate electrode therearound as described hereinabove. Connection is provided between the auxiliary pilot thyristor and the center pilot thyristor of the device in order to provide substantially simultaneous turn-on from both the center and the periphery of the device.
  • Yet another alternative embodiment of this invention provides for a radial connection between the center pilot thyristor and the circumferential auxiliary pilot thyristor by means of one or more metallizations formed integrally with the device. This latter embodiment of the invention provides additional turn-on area and thereby forms a device having many advantages in addition to self-protection from the effects of overvoltage avalanche breakdown.
  • FIG. 1 depicts a self-protected thyristor semiconductor device in accordance with one embodiment of this invention.
  • FIG. 2 illustrates a self-protected thyristor in accordance with another embodiment of this invention.
  • FIG. 3 illustrates a self-protected thyristor in accordance with yet another embodiment of this invention.
  • FIG. 4 illustrates a self-protected thyristor in accordance with still another embodiment of the invention.
  • FIG. 1 wherein an exemplary thyristor device including an auxiliary gate at the periphery thereof is illustrated.
  • the device designated generally at 10, is a four layer thyristor device of substantially disk-shaped configuration.
  • Thyristor 10 is substantially of a type well known to those skilled in the art save only for the addition of an auxiliary gate region thereto in accordance with this invention.
  • a conductive electrical contact 12 is ohmically connected to a p-conductivity type semiconductor layer 14 which forms the anode layer of the device.
  • P-type layer 14 may conveniently be of silicon or, alternatively, any other of the semiconductor materials known in the art.
  • N-type base layer 16 overlies p-type anode layer 14 forming first semiconductor junction 18 therebetween.
  • P-type base layer 20 overlies n-type base layer 16 and forms second semiconductor junction 22 therebetween.
  • Gate electrode 24 overlies p-type base layer 20 and is located substantially in the center of the device.
  • the precise configuration of gate electrode 24 may vary from the generally round shape illustrated herein for purposes of example and, in fact, may be any of the gate structures known in the art.
  • the precise form of gate 24 and associated pilot thyristor region 26 which includes n-type emitter layer 28 and electrode 30 will determine the gate characteristics of the device. Rectangular gates, circular gates, isolated gates, junction gates, light sensitive gate regions and other types of gate structures heretofore known may be appropriately employed in conjunction with any thyristor device in accordance with this invention.
  • the main cathode region contains n-conductivity type emitter layer 34, a generally annular shaped region overlying p-type base layer 20.
  • Cathode metallization 36 ohmically contacts emitter 34 and forms the cathode of the device. While not illustrated, it is to be appreciated that emitter layer 34 and overlying metallization 36 might well be provided with emitter shorts as is well known to those skilled in the art. The presence or absence of such emitter shorts is not a part of this invention except in so far as they may readily be employed as desired to obtain the advantages attendant thereto without effecting the advantages obtained by this invention. However, such shorts would normally be present and situated in such a manner as to make the main emitter region less sensitive to turn-on currents than the pilot and auxiliary pilot thyristor regions.
  • Auxiliary pilot thyristor region 38 surrounds the main thyristor section including n-conductivity type layer 40 and metallization 42 overlying layer 40. It will be appreciated by reference to device 10 that the orientation of auxiliary pilot thyristor 38 is opposite that pilot thyristor 26. That is to say, that they are mirror images of one another with respect to the main thyristor section of the device. It will be apparent, of course, that the radius of auxiliary pilot thyristor 38 will be greater than that of pilot thyristor 26 since thyristor 38 is exterior to the main thyristor section while thyristor 26 is interior thereto.
  • Auxiliary gate electrode 44 surrounds auxiliary pilot thyristor 38 and overlies p-type base layer 20.
  • thyristor 10 also includes a negatively beveled edge region at the outside of the device. As is well known, the beveling of the edge of a thyristor device reduces the electric field intensity thereat and increases the ultimate breakdown voltage of the device. Device 10 includes a first negatively beveled region 46 and a second region 48 having a different bevel angles. It will be appreciated that in accordance with this invention techniques well known to those skilled in the art for determining the optimum bevel angles may be appropriately utilized.
  • Auxiliary pilot thyristor 38 is provided with a second electrical contact 50 to metallization 42 thereof.
  • the device be so designed with respect to the breakdown voltage thereof that the maximum electrical field be certain to occur at the periphery of the device and in any case outside of the auxiliary pilot thyristor region 38. Even in the presence of device nonuniformities affecting breakdown voltage, this end may readily be accomplished by selection of a larger bevel angle for region 46. Generally, such purposeful lowering of edge region breakdown voltage will not be required. Assume now that current begins to flow as indicated by arrow 52. It will be understood that upon the application of an overvoltage to device 10 current will begin to flow along path 52 and thereafter under auxiliary gate 44, and auxiliary pilot thyristor 38.
  • auxiliary pilot thyristor 38 When the current reaches a sufficient magnitude auxiliary pilot thyristor 38 turns on followed by turn-on of the main thyristor section. This assumes, as is usual with pilot or auxiliary thyristors, that they have a greater turn-on sensitivity than the main emitter region. As is well known, as the main section of thyristor 10 turns on, the resistance thereunder decreases to an extent that the area of the thyristor underlying auxiliary pilot thyristor 38 and auxiliarly pilot gate 44 turns off, the current thereunder diminishing substantially to zero.
  • a self-protecting thyristor in accordance with this invention has the advantage therefore that not only does the initial leakage current at the onset of avalanche breakdown tend to turn on the device, but further the area of initial turn-on is actually turned off as the main body of the device is turned on.
  • electrical contacts 32 and 50 may be connected together by any convenient means to yet further increase the turn-on area of the device in the presence of either an external gate signal or an internally generated gate signal due to the onset of avalanche breakdown.
  • Connections 32 and 50 may be electrically connected by any convenient method known to those skilled in the art as, for example, by an external wire or the like. It is, however, advantageous in accordance with this invention to provide a connection of the type illustrated, for example in FIG. 2.
  • the device indicated generally at 60, is in many ways similar to the device of FIG. 1 and in conjunction therewith like reference numerals indicate like elements.
  • An electrically conductive base member 12 is provided which is suitable for maintaining thermal and electrical contact with thyristor device 60.
  • a p-conductivity type semiconductor layer 14 overlies base 12 and is in thermal and electrical contact therewith.
  • a second semiconductor layer 16 overlies layer 14 and is of n-conductivity semiconductor material. Layers 14 and 16 form first semiconductor junction 18 therebetween.
  • a second p-conductivity type layer 20 overlies layer 16 forming semiconductor junction 22 therebetween. Layers 16 and 20 may be referred to as the n-base and p-base regions of the thyristor, respectively.
  • Gate electrode 24 is located at the approximate center of the device.
  • Pilot thyristor 62 includes n-conductivity type annular ring 64 which surrounds gate electrode 24. While n-type annular ring 64, hereinafter referred to as the pilot thyristor emitter, is illustrated in accordance with this invention as overlying p base layer 20, it will be understood pilot emitter 64 might readily be formed by diffusion, in which case it would extend from the surface of p base layer 20 down toward, but not meeting, semiconductor junction 22. The precise construction of pilot thyristor 62 forms no part of this invention, except insofar as described.
  • Metallization 66 overlies emitter layer 64 and provides at the exterior circumference thereof a short to p base 20.
  • Metallization 66 is generally of annular configuration and includes spoke-like projections 68 and 70 extending outward therefrom towards the circumference of the device. While thyristor device 60 is illustrated as having three spoke-like projections extending from metallization 66 out towards the periphery of the device, it will be understood that, in accordance with this invention, the number and shape of projections may be varied without departing from the true spirit and scope thereof. For example, at least one projection must be utilized in accordance with this embodiment of the invention, and it may be desirable to use 2, 3, 4, or more projections in order to increase the turn-on area as will here below described. Projections 68 and 70 intersect and become part of auxiliary pilot thyristor 72.
  • Auxiliary pilot thyristor 72 includes both metallization 74 and n conductivity type pilot emitter layer 76.
  • Metallization 74 overlies n type emitter 76.
  • Pilot thyristor 72 is surrounded at the outside periphery thereof by gate metallization 78 which functions as the gate of the auxiliary pilot thyristor.
  • the main body of thyristor 60 includes n-conductivity type emitter layer 80 and overlying metallization 82 which forms the cathode terminal of the device. It will be appreciated by those skilled in the art that the two power handling connections to the device are made to cathode terminal 82 and to anode metallization 12. Gate connection is made to gate contact 24 for normal triggering of the device.
  • auxiliary pilot thyristor 72 is electrically connected to pilot thyristor 62, the main emitter of the device is turned on substantially simultaneously from both the inner and outer edges thereof. Further, as will be appreciated by reference to the top view of FIG. 2, turn on will also be effected in the area of radially extending projections 68, 69 and 70. It will be appreciated that this larger turn on area will be effected whether the device is triggered by leakage currents flowing at the onset of avalanche breakdown or by an externally applied gate signal applied either to gate 24 or, if desired, to gate 78.
  • FIG. 3 illustrates a thyristor device in accordance with this invention as would be applied to an edge gated thyristor.
  • the thyristor indicated generally at 90 includes metallized contact 12, anode 14 of p-type conductivity semiconductor material, n-base 16 and p-base 20 all of like composition and function to the similarly numbered layers and contacts of FIGS. 1 and 2.
  • Semiconductor junctions 18 and 22 correspond similarly to the like numbered devices of FIGS. 1 and 2.
  • the arrangement of the gate contacts, pilot emitter, secondary pilot emitter and main emitter of device 90 differs somewhat from FIGS. 1 and 2, and will be described in substantial detail herein.
  • the main emitter of device 90 includes n-type emitter layer 92 overlying p base layer 20.
  • n-type emitter layer 92 is a continuous emitter region having a gate region located at an edge thereof rather than centrally as was the case in devices 10 and 60.
  • Cathode metallization 94 overlies n-type emitter layer 92 and forms the cathode terminal of the device.
  • main emitter region 96 may include emitter shorts, fabricated in a manner well-known to those skilled in the art, extending through n-conductivity type emitter layer 92 to p-type base layer 20.
  • Gate electrode 98 directly overlies p-type base layer 20 and provides a terminal for the application of a normal gate turn-on voltage to the device.
  • Gate electrode 98 is surrounded by annular pilot thyristor 100, which includes pilot emitter 102 and overlying metallization 104. While thyristor 100 is shown in FIG. 3 as having a generally circular configuration, it will be appreciated by those skilled in the art that other gate structures may advantageously be used in certain semiconductor devices in accordance with this invention, and the invention is not limited to any particular gate geometry. For example, an oval or sausage-shape gate region might readily be employed in a device of the general configuration of device 90, thereby providing somewhat reduced gate area on the device in order to maximize the area of the main SCR region of the device.
  • Auxiliary pilot thyristor 106 partially surrounds pilot thyristor 100 and gate electrode 98 effectively isolating the gate region from the main thyristor region 96.
  • Metallization 104 which overlies pilot emitter layer 102 surrounds the device thus providing a long turn-on line for auxiliary pilot thyristor 106 which in turns provides a similarly long turn-on line for main thyristor section 96.
  • Thyristor 90 is provided, as was the case with thyristors 10 and 60, with a beveled edge region. The bevel at the edge of the device serves to increase the breakdown voltage.
  • the breakdown voltage of a device of the type illustrated in FIG. 3 will nevertheless be lower and, in fact in accordance with this invention, should be lower at the edge of the device and anywhere else in the device. It will be apparent by reference to FIG. 3 that leakage currents which begin to flow at the onset of avalanche breakdown and which may be expected to flow at the edge of the device may turn the device on in one of two ways. Should the leakage currents begin to flow under the gate region 98, the device will be turned on by the action of pilot thyristor 100 and then auxiliary pilot thyristor 106 acting sequentially to turn on main thyristor section 96.
  • main thyristor section 96 will be turned on by the action of auxiliary pilot thyristor 106 alone. In either event, the turn on will occur in a controlled manner, thus preventing destructive avalanche voltage breakdown.
  • FIG. 4 illustrates an embodiment of this invention similar to that illustrated in FIG. 2, but adapted for light-triggering of the device.
  • the thyristor indicated generally at 110, includes substantially all of the elements of thyristor 60 of FIG. 2 and like numbered elements perform similar functions.
  • a conductive electrical contact 12 is provided having semiconductor layers 14, 16 and 20, in that order, overlying electrode 12 and forming semiconductor junctions 18 and 22 therebetween.
  • Layers 14, 16 and 20 are of p-type, n-type and p-type semiconductor materials, respectively.
  • Light-sensitive gate region 112 extends from the surface of p-type semiconductor layer 20 down into layer 20 towards, but not meeting, junction 22.
  • the depth of light-sensitive region 112 be sufficient to provide for the ready generation of carriers proximate to junction 22 and the presence of triggering radiation impinging upon light-sensitive area 112.
  • Electrical contact 114 of generally annular characteristics surrounds light-sensitive area 112 and provides for the uniform turn on of pilot thyristor region 62. Annular ring 114 is optional in accordance with this invention and may be dispensed with where desired.
  • Light-sensitive region 112 is formed, as is well-known to those skilled in the art, and may, if desired, be passivated, polished, or treated in any other way tending to improve its effectiveness.
  • pilot thyristor 62 is surrounded by the main thyristor portion of device 110 including n-type emitter layer 80 and electrical contact 82 thereover.
  • the main emitter may conveniently be provided with emitter shorts therein of the type illustrated, for example, at 116. Emitter shorts are well known in the art and it will be appreciated that electrical contact 82 is ohmically connected to p-type semiconductor layer 20 through n-type emitter region 80 at localized points in the emitter.
  • emitter shorts are well known and form no part of this invention, except insofar as they are compatible herewith and may be advantageously employed in the device in accordance with this invention.
  • the remainder of device 110 is substantially identical to device 60 of FIG. 2 and a description of device 60 may be applied to device 110.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Thyristors (AREA)
US05/677,876 1976-04-19 1976-04-19 Self-protected semiconductor device Expired - Lifetime US4012761A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US05/677,876 US4012761A (en) 1976-04-19 1976-04-19 Self-protected semiconductor device
CA276,317A CA1089111A (en) 1976-04-19 1977-04-07 Self-protected semiconductor device
SE7704360A SE424485B (sv) 1976-04-19 1977-04-15 Tyristor
FR7711380A FR2349216A1 (fr) 1976-04-19 1977-04-15 Dispositif semi-conducteur auto-protege
DE2716874A DE2716874C2 (de) 1976-04-19 1977-04-16 Thyristor
JP4361577A JPS52138880A (en) 1976-04-19 1977-04-18 Selffprotecting semiconductor device
GB16215/77A GB1515836A (en) 1976-04-19 1977-04-19 Semiconductors

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US05/677,876 US4012761A (en) 1976-04-19 1976-04-19 Self-protected semiconductor device

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US4012761A true US4012761A (en) 1977-03-15

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US (1) US4012761A (de)
JP (1) JPS52138880A (de)
CA (1) CA1089111A (de)
DE (1) DE2716874C2 (de)
FR (1) FR2349216A1 (de)
GB (1) GB1515836A (de)
SE (1) SE424485B (de)

Cited By (16)

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US4053922A (en) * 1976-05-19 1977-10-11 General Electric Company Light triggered thyristor having controlled turn on delay
US4060826A (en) * 1975-08-29 1977-11-29 Siemens Aktiengesellschaft Light activated thyristor capable of activation by intensity radiation
US4122480A (en) * 1975-11-05 1978-10-24 Licentia Patent-Verwaltungs-G.M.B.H. Light fired thyristor with faulty firing protection
US4170020A (en) * 1976-04-09 1979-10-02 Kabushiki Kaisha Meidensha Gate turn-off thyristor for reducing the on current thereof
US4240091A (en) * 1978-08-23 1980-12-16 Hitachi, Ltd. Semiconductor controlled rectifier device with small area dV/dt self-protecting means
US4298880A (en) * 1978-06-15 1981-11-03 Bbc, Brown, Boveri & Co., Ltd. Power thyristor and method of fabrication therefore utilizing control, generating, and firing gates
US4305084A (en) * 1979-11-16 1981-12-08 General Electric Company Semiconductor switching device capable of turn-on only at low applied voltages using self pinch-off means
US4314266A (en) * 1978-07-20 1982-02-02 Electric Power Research Institute, Inc. Thyristor with voltage breakover current control separated from main emitter by current limit region
US4352118A (en) * 1979-03-02 1982-09-28 Electric Power Research Institute, Inc. Thyristor with segmented turn-on line for directing turn-on current
EP0069308A2 (de) * 1981-06-30 1983-01-12 Kabushiki Kaisha Toshiba Thyristor
WO1986000469A1 (en) * 1984-06-29 1986-01-16 General Electric Company Controlled turn-on thyristor
US4633282A (en) * 1982-10-04 1986-12-30 Rockwell International Corporation Metal-semiconductor field-effect transistor with a partial p-type drain
US4812892A (en) * 1978-03-30 1989-03-14 Siemens Aktiengesellschaft Light controllable thyristors
US4897706A (en) * 1987-12-17 1990-01-30 Siemens Akiengesellschaft Thyristor protected against breakover firing
US4908687A (en) * 1984-06-29 1990-03-13 General Electric Company Controlled turn-on thyristor
EP0833388A2 (de) * 1996-09-30 1998-04-01 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Halbleiterbauelement mit Lateralwiderstand

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DE2907732A1 (de) * 1979-02-28 1980-09-04 Siemens Ag Thyristor
IE840248L (en) * 1983-02-18 1984-08-18 Westinghouse Electric Corp Light activated power transistor
DE3435548A1 (de) * 1984-09-27 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hoher innerer zuendverstaerkung

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US3476989A (en) * 1966-04-15 1969-11-04 Westinghouse Brake & Signal Controlled rectifier semiconductor device
US3440501A (en) * 1967-02-02 1969-04-22 Gen Electric Double-triggering semiconductor controlled rectifier
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Cited By (18)

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US4122480A (en) * 1975-11-05 1978-10-24 Licentia Patent-Verwaltungs-G.M.B.H. Light fired thyristor with faulty firing protection
US4170020A (en) * 1976-04-09 1979-10-02 Kabushiki Kaisha Meidensha Gate turn-off thyristor for reducing the on current thereof
US4053922A (en) * 1976-05-19 1977-10-11 General Electric Company Light triggered thyristor having controlled turn on delay
US4812892A (en) * 1978-03-30 1989-03-14 Siemens Aktiengesellschaft Light controllable thyristors
US4298880A (en) * 1978-06-15 1981-11-03 Bbc, Brown, Boveri & Co., Ltd. Power thyristor and method of fabrication therefore utilizing control, generating, and firing gates
US4314266A (en) * 1978-07-20 1982-02-02 Electric Power Research Institute, Inc. Thyristor with voltage breakover current control separated from main emitter by current limit region
US4240091A (en) * 1978-08-23 1980-12-16 Hitachi, Ltd. Semiconductor controlled rectifier device with small area dV/dt self-protecting means
US4352118A (en) * 1979-03-02 1982-09-28 Electric Power Research Institute, Inc. Thyristor with segmented turn-on line for directing turn-on current
US4305084A (en) * 1979-11-16 1981-12-08 General Electric Company Semiconductor switching device capable of turn-on only at low applied voltages using self pinch-off means
EP0069308A2 (de) * 1981-06-30 1983-01-12 Kabushiki Kaisha Toshiba Thyristor
EP0069308A3 (en) * 1981-06-30 1983-09-21 Tokyo Shibaura Denki Kabushiki Kaisha Thyristor
US4633282A (en) * 1982-10-04 1986-12-30 Rockwell International Corporation Metal-semiconductor field-effect transistor with a partial p-type drain
WO1986000469A1 (en) * 1984-06-29 1986-01-16 General Electric Company Controlled turn-on thyristor
US4908687A (en) * 1984-06-29 1990-03-13 General Electric Company Controlled turn-on thyristor
US4897706A (en) * 1987-12-17 1990-01-30 Siemens Akiengesellschaft Thyristor protected against breakover firing
EP0833388A2 (de) * 1996-09-30 1998-04-01 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Halbleiterbauelement mit Lateralwiderstand
EP0833388A3 (de) * 1996-09-30 1999-08-25 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Halbleiterbauelement mit Lateralwiderstand

Also Published As

Publication number Publication date
FR2349216B1 (de) 1983-06-10
GB1515836A (en) 1978-06-28
JPS52138880A (en) 1977-11-19
SE424485B (sv) 1982-07-19
SE7704360L (sv) 1977-10-20
FR2349216A1 (fr) 1977-11-18
DE2716874C2 (de) 1983-02-03
CA1089111A (en) 1980-11-04
JPS5641180B2 (de) 1981-09-26
DE2716874A1 (de) 1977-10-27

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