US3969125A - Heat resistive and reinforced composite material - Google Patents
Heat resistive and reinforced composite material Download PDFInfo
- Publication number
- US3969125A US3969125A US05/381,672 US38167273A US3969125A US 3969125 A US3969125 A US 3969125A US 38167273 A US38167273 A US 38167273A US 3969125 A US3969125 A US 3969125A
- Authority
- US
- United States
- Prior art keywords
- oxide
- yttrium
- group
- sub
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011208 reinforced composite material Substances 0.000 title abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000000203 mixture Substances 0.000 claims abstract description 23
- 238000005245 sintering Methods 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 13
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 239000002994 raw material Substances 0.000 claims description 12
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 11
- 239000002131 composite material Substances 0.000 claims description 10
- 229910052684 Cerium Inorganic materials 0.000 claims description 7
- 239000011230 binding agent Substances 0.000 claims description 7
- 229910052746 lanthanum Inorganic materials 0.000 claims description 7
- 229910052706 scandium Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910052727 yttrium Inorganic materials 0.000 claims description 7
- 229910018514 Al—O—N Inorganic materials 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 3
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 3
- QVOIJBIQBYRBCF-UHFFFAOYSA-H yttrium(3+);tricarbonate Chemical compound [Y+3].[Y+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O QVOIJBIQBYRBCF-UHFFFAOYSA-H 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 2
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 claims 2
- 238000007731 hot pressing Methods 0.000 claims 2
- 229910000765 intermetallic Inorganic materials 0.000 claims 2
- DEXZEPDUSNRVTN-UHFFFAOYSA-K yttrium(3+);trihydroxide Chemical compound [OH-].[OH-].[OH-].[Y+3] DEXZEPDUSNRVTN-UHFFFAOYSA-K 0.000 claims 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 abstract description 5
- 239000000126 substance Substances 0.000 description 9
- 238000005452 bending Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 235000021355 Stearic acid Nutrition 0.000 description 4
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 4
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 4
- 239000008117 stearic acid Substances 0.000 description 4
- 229910018404 Al2 O3 Inorganic materials 0.000 description 3
- 229910007277 Si3 N4 Inorganic materials 0.000 description 3
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- GFDKELMFCRQUSG-UHFFFAOYSA-N yttrium;trihydrate Chemical compound O.O.O.[Y] GFDKELMFCRQUSG-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
- C04B35/593—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by pressure sintering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/597—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon oxynitride, e.g. SIALONS
Definitions
- This invention relates to a heat resistive and reinforced articles, and more particularly to a heat resistive and reinforced articles made of composite material prepared by sintering mixed and molded raw materials containing the major component if trisilicon tetranitride.
- a sintered material consisting of trisilicon tetranitride (Si 3 N 4 ) has many superior characteristics, such as high heat resistivity to temperatures up to 1900°C, good mechanical strength at high temperatures, low thermal expansion coefficient, and a resultant high resistivity to heat shocks. It is now being developed to utilize this material as a substitute of cermet for machine parts which require good heat resistivity and mechanical strength at high temperatures. Further, this material is now utilized for making molten metal vessels because of its excellent corrosion resistivity to molten metals.
- a modified method of sintering under atmospheric pressure is known to replace the hot-press sintering of trisilicon tetranitride.
- a press-molded silicon powder which may be more or less densely formed, is sintered under atmospheric pressure in an atmosphere of nitrogen which reacts with the silicon.
- the density of the sintered trisilicon tetranitride is no more than 85 percent of the theoretical value, and no sintered article of greatly high density can be obtained.
- An object of this invention is to obtain a heat resistive and reinforced article made of composite materials having high density and good bending strength by ordinary sintering.
- the above object can be attained in accordance with the present invention by press-molding a finely powdered mixture of trisilicon tetranitride, an oxide of yttrium group elements and aluminum oxide, and sintering said press-molded article under atmospheric pressure.
- the heat resistive and reinforced article made of composite materials in accordance with this invention is prepared by sintering under atmospheric pressure a press-molded mixture of finely powdered raw materials of trisilicon tetranitride, an oxide of yttrium, scandium, lanthanum or cerium and aluminum oxide.
- a chemical compound of Si-Y-Al-O-N series is formed on the basis of the mutual reaction between trisilicon tetranitride, an oxide of the afore-mentioned yttrium, scandium, lanthanum or cerium or a mixture thereof and aluminum oxide, and the sintered substance mainly contains trisilicon tetranitride and a small amount of above-mentioned chemical compound.
- the microscopic structure of this sintered substance is fibrous, needle-like or columnar (hereinafter referred to merely as "fibrous").
- the preferable range of mixing ratio of the three kinds of raw material is 70 to 90 weight percent of trisilicon tetranitride, 5 to 20 weight percent of an oxide of yttrium, scandium, lanthanum or cerium or any of mixtures thereof, and 1 to 20 weight percent of aluminum oxide, based respectively on the weight of mixed raw materials. Mixing outside this range will result in no favorable composite materials.
- about 5 weight percent, based on the weight of mixed raw materials, of a binding material such as stearic acid may be added to the mixed raw materials to form a molded article to be sintered. This binder will vaporize and disappear from the article when heated during the sintering process.
- the particle size of each raw material should preferably be from 0.1 to 2.0 microns.
- the preferable sintering temperature is from 1400° to 1900 °C. At a temperature lower than 1400 °C, there is scarcely recognized a progress of sintering, and at a temperature of over 1900 °C, a decomposition of the fibrous structure depending on the sublimation of trisilicon tetranitride occurs actively, so that in these cases a favorable sintered composite material can not be obtained.
- Sintering should preferably be carried out in a non-oxidizing atmosphere.
- the presence of a large amount of oxygen will oxidize trisilicon tetranitride at a high temperature and change it into silicon dioxide, so that the inherent nature of the material will be lost.
- the presence in the atmosphere of oxygen in the amount less than 10 volume percent will not function to change the nature of the sintered substance since only a small part of trisilicon tetranitride changes into harmless silicon oxynitride (Si 2 ON 2 ), with the result that the sintered substance can be utilized for any purpose without practical disadvantages.
- a method of ordinary sintering that is, sintering at atmospheric pressure
- a method of pressurized sintering In the latter case, the structure and characteristics of the product may differ from one obtained in the former case to some extent. That is to say, though the products by both methods have a fibrous structure respectively, the method of atmospheric pressure sintering produces a fibrous structure arranged in three dimensional directions, while the method of pressurized sintering brings on two dimensional directions parallel to the pressing plane. Therefore, it is necessary to select either one of the methods in compliance with a particular application of the product.
- silicon or a mixture of silicon and trisilicon tetranitride may be used.
- a nitrogenous atmosphere formed for example of ammonia gas or a mixed gas of nitrogen and hydrogen, in order to change the silicon into trisilicon tetranitride during sintering.
- yttrium carbonate [Y 2 (CO 3 ) 3 ] or yttrium hydroxide (Y(OH) 3 ) may be used by reason of the fact that such substitutes are changed by heating into Y 2 O 3 during sintering.
- Y(OH) 3 yttrium hydroxide
- Al 2 (SO 4 ) 3 may be used as a substitute of Al 2 O 3 .
- Yttrium oxide can be entirely or partly replaced by scandium oxide, lanthanum oxide or cerium oxide, with substantially the same results.
- a suitable heat resistive substance such as any of the oxides, nitrides, carbides, silicides, sulfides or boron compounds may be included into the raw materials in order to add its specific character thereto.
- the density of the obtained article was 3.40 g/cc.
- the theoretical density of Si 3 N 4 , Y 2 O 3 and Al 2 O 3 are 3.20 g/cc, 4.8 g/cc and 3.9 g/cc respectively.
- the mechanical bending strength of the obtained article was 45.7 kg/mm 2 .
- the obtained composite material had a three dimensional fibrous structure under microscopic observation.
- the fibrous crystals consisted of Si 3 N 4 , and the matrix thereof was made of Si-Y-Al-O-N compounds.
- the obtained article was highly densified and had high bending strength of 105 kg/mm 2 , and it was specifically strengthened in two dimensional directions parallel to the pressed surface thereof.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP45069308A JPS4921091B1 (enrdf_load_stackoverflow) | 1970-08-10 | 1970-08-10 | |
| JA45-69308 | 1970-08-10 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US05169821 Continuation-In-Part | 1971-08-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US3969125A true US3969125A (en) | 1976-07-13 |
Family
ID=13398787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US05/381,672 Expired - Lifetime US3969125A (en) | 1970-08-10 | 1973-07-23 | Heat resistive and reinforced composite material |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3969125A (enrdf_load_stackoverflow) |
| JP (1) | JPS4921091B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1365126A (enrdf_load_stackoverflow) |
Cited By (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4071371A (en) * | 1975-03-06 | 1978-01-31 | Ford Motor Company | High temperature ceramic material suitable for gas turbine applications and a process for producing same |
| US4073845A (en) * | 1976-01-29 | 1978-02-14 | Gte Sylvania Incorporated | High density high strength S13 N4 ceramics prepared by pressureless sintering of partly crystalline, partly amorphous S13 N4 powder |
| US4102698A (en) * | 1976-11-23 | 1978-07-25 | Westinghouse Electric Corp. | Silicon nitride compositions in the Si3 N4 -Y2 O3 -SiO2 system |
| DE2801474A1 (de) * | 1977-01-13 | 1978-07-27 | Tokyo Shibaura Electric Co | Pulverfoermiges keramisches material und verfahren zu seiner herstellung |
| US4127416A (en) * | 1976-07-24 | 1978-11-28 | Lucas Industries Limited | Method of producing a ceramic product |
| US4143107A (en) * | 1974-06-28 | 1979-03-06 | Tokyo Shibaura Electric Co., Ltd. | Silicon nitride-based sintered material and method for manufacturing the same |
| US4179301A (en) * | 1979-01-08 | 1979-12-18 | Gte Sylvania Incorporated | Si3 N4 containing intergranular phase nucleating agent and method |
| US4179486A (en) * | 1978-07-21 | 1979-12-18 | Rockwell International Corporation | Method of protecting Si3 N4 ceramic alloy during heating |
| US4196171A (en) * | 1977-09-05 | 1980-04-01 | Tokyo Shibaura Denki Kabushiki Kaisha | Apparatus for making a single crystal of III-V compound semiconductive material |
| US4205033A (en) * | 1977-08-22 | 1980-05-27 | Ngk Spark Plug Co., Ltd. | Process for producing compact silicon nitride ceramics |
| US4234343A (en) * | 1979-01-04 | 1980-11-18 | The United States Of America As Represented By The United States Department Of Energy | Structural silicon nitride materials containing rare earth oxides |
| US4264548A (en) * | 1979-12-20 | 1981-04-28 | Ford Motor Company | Method of making silicon nitride based cutting tools-I |
| US4264550A (en) * | 1979-12-20 | 1981-04-28 | Ford Motor Company | Method of making silicon nitride base cutting tools -II |
| US4280973A (en) * | 1979-11-14 | 1981-07-28 | Ford Motor Company | Process for producing Si3 N4 base articles by the cold press sinter method |
| US4310492A (en) * | 1979-11-14 | 1982-01-12 | Tokyo Shibaura Denki Kabushiki Kaisha | Apparatus for making a single crystal |
| US4327187A (en) * | 1979-02-22 | 1982-04-27 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of producing sintered body of ceramics |
| US4332909A (en) * | 1979-11-22 | 1982-06-01 | Tokyo Shibaura Denki Kabushiki Kaisha | Silicon nitride based sintered product and method of producing the same |
| US4341874A (en) * | 1977-01-13 | 1982-07-27 | Tokyo Shibaura Electric Co., Ltd. | Si3 N4 Ceramic powder material and method for manufacturing the same |
| US4407971A (en) * | 1981-09-01 | 1983-10-04 | Tokyo Shibaura Denki Kabushiki Kaisha | Sintered body of silicon nitride-based ceramics |
| US4407970A (en) * | 1981-08-10 | 1983-10-04 | Tokyo Shibaura Denki Kabushiki Kaisha | Sintered body of ceramics and preparation thereof |
| US4443394A (en) * | 1983-07-19 | 1984-04-17 | Ford Motor Company | Method of making a silicon nitride body from the Y2 O3 /SiO2 3 N4 /Al2 O3 |
| US4547470A (en) * | 1983-04-25 | 1985-10-15 | Mitsubishi Kinzoku Kabushiki Kaisha | Sialon-base ceramic materials excellent in wear resistance |
| US4550063A (en) * | 1984-04-17 | 1985-10-29 | United Technologies Corporation | Silicon nitride reinforced nickel alloy composite materials |
| DE3537208A1 (de) * | 1984-10-22 | 1986-04-24 | United Technologies Corp., Hartford, Conn. | Formkoerper auf der basis eines gesinterten siliciumnitrids sowie ihre verwendung bei der verarbeitung schmelzfluessiger nickellegierungen |
| US4609633A (en) * | 1983-04-22 | 1986-09-02 | Toshiba Tungaloy Co., Ltd. | Silicon nitride sintered body and method for preparing the same |
| US4715986A (en) * | 1984-03-30 | 1987-12-29 | Th. Goldschmidt Ag | Particles, modified at their surface by hydrophilic and hydrophobic groups |
| US4879079A (en) * | 1984-07-16 | 1989-11-07 | Gte Products Corporation | Formation of lanthanum aluminate |
| US4879080A (en) * | 1984-05-02 | 1989-11-07 | Gte Products Corporation | High density silicon nitride bodies |
| US5017530A (en) * | 1987-01-28 | 1991-05-21 | Tosoh Corporation | Silicon nitride sintered body and process for preparation thereof |
| US5093290A (en) * | 1988-07-08 | 1992-03-03 | Nippon Tungsten Co., Ltd. | Silicon nitride type sintered bodies and method for producing the same |
| US5096859A (en) * | 1990-02-09 | 1992-03-17 | Ngk Insulators, Ltd. | Silicon nitride sintered body and method of producing the same |
| US5145620A (en) * | 1990-02-09 | 1992-09-08 | Ngk Insulators, Ltd. | Method of producing a silicon nitride sintered body |
| US5173458A (en) * | 1990-12-28 | 1992-12-22 | Sumitomo Electric Industries, Ltd. | Silicon nitride sintered body and process for producing the same |
| US5177038A (en) * | 1989-05-10 | 1993-01-05 | Ngk Insulators, Ltd. | Silicon nitride sintered bodies |
| US5229046A (en) * | 1990-05-17 | 1993-07-20 | Ngk Insulators, Ltd. | Process for producing thermal shock-resistant silicon nitride sintered material |
| US5238882A (en) * | 1989-05-10 | 1993-08-24 | Ngk Insulators, Ltd. | Method of manufacturing silicon nitride sintered bodies |
| US5275772A (en) * | 1991-05-22 | 1994-01-04 | Sumitomo Electric Industries, Ltd. | Silicon nitride sintered body and process for producing the same |
| EP0158901B1 (en) * | 1984-03-30 | 1994-03-02 | Koyo Seiko Co., Ltd. | Rotating member supporting apparatus |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4038092A (en) * | 1976-01-30 | 1977-07-26 | Norton Company | Strengthening reaction sintered silicon nitride |
| EP0100380B1 (en) * | 1981-02-05 | 1987-06-16 | Sumitomo Electric Industries Limited | Method for plastic deformation of non-ferrous metals |
| SE438849B (sv) * | 1981-05-25 | 1985-05-13 | Svenska Silikatforskning | Forfarande vid framstellning av formkroppar av kiselnitridbaserade material |
| JPS58158438U (ja) * | 1982-04-16 | 1983-10-22 | 東芝機械株式会社 | エピタキシヤル成長装置のコイル保持装置 |
| US5178647A (en) * | 1983-07-29 | 1993-01-12 | Kabushiki Kaisha Toshiba | Wear-resistant member |
| JPS6051668A (ja) * | 1983-07-29 | 1985-03-23 | 株式会社東芝 | 耐摩耗性部材 |
| DE102010019255B4 (de) | 2010-05-03 | 2017-03-23 | CoorsTek GmbH | Substratkörper auf der Basis von Siliziumnitrid |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3262761A (en) * | 1963-10-03 | 1966-07-26 | Du Pont | High temperature-resistant materials of aluminum, nitrogen, and silicon and preparation thereof |
| US3549402A (en) * | 1965-08-24 | 1970-12-22 | Carborundum Co | Silicon nitride composition and articles thereof |
-
1970
- 1970-08-10 JP JP45069308A patent/JPS4921091B1/ja active Pending
-
1971
- 1971-08-10 GB GB3757171A patent/GB1365126A/en not_active Expired
-
1973
- 1973-07-23 US US05/381,672 patent/US3969125A/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3262761A (en) * | 1963-10-03 | 1966-07-26 | Du Pont | High temperature-resistant materials of aluminum, nitrogen, and silicon and preparation thereof |
| US3549402A (en) * | 1965-08-24 | 1970-12-22 | Carborundum Co | Silicon nitride composition and articles thereof |
Non-Patent Citations (2)
| Title |
|---|
| Mazdiyasni et al., "Consolidation, Microstructure, and Mechanical Properties of Si.sub.3 N.sub.4 Doped with Rare-Earth Oxides," J. Am. Cu. Soc., 57[12], pp. 536-537, (Dec. 1974). * |
| Mazdiyasni et al., "Consolidation, Microstructure, and Mechanical Properties of Si3 N4 Doped with Rare-Earth Oxides," J. Am. Cu. Soc., 57[12], pp. 536-537, (Dec. 1974). |
Cited By (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4143107A (en) * | 1974-06-28 | 1979-03-06 | Tokyo Shibaura Electric Co., Ltd. | Silicon nitride-based sintered material and method for manufacturing the same |
| US4071371A (en) * | 1975-03-06 | 1978-01-31 | Ford Motor Company | High temperature ceramic material suitable for gas turbine applications and a process for producing same |
| US4073845A (en) * | 1976-01-29 | 1978-02-14 | Gte Sylvania Incorporated | High density high strength S13 N4 ceramics prepared by pressureless sintering of partly crystalline, partly amorphous S13 N4 powder |
| US4127416A (en) * | 1976-07-24 | 1978-11-28 | Lucas Industries Limited | Method of producing a ceramic product |
| US4102698A (en) * | 1976-11-23 | 1978-07-25 | Westinghouse Electric Corp. | Silicon nitride compositions in the Si3 N4 -Y2 O3 -SiO2 system |
| US4284432A (en) * | 1977-01-13 | 1981-08-18 | Tokyo Shibaura Electric Co. Ltd. | Ceramic powder material and method for manufacturing the same |
| DE2801474A1 (de) * | 1977-01-13 | 1978-07-27 | Tokyo Shibaura Electric Co | Pulverfoermiges keramisches material und verfahren zu seiner herstellung |
| US4341874A (en) * | 1977-01-13 | 1982-07-27 | Tokyo Shibaura Electric Co., Ltd. | Si3 N4 Ceramic powder material and method for manufacturing the same |
| US4205033A (en) * | 1977-08-22 | 1980-05-27 | Ngk Spark Plug Co., Ltd. | Process for producing compact silicon nitride ceramics |
| US4196171A (en) * | 1977-09-05 | 1980-04-01 | Tokyo Shibaura Denki Kabushiki Kaisha | Apparatus for making a single crystal of III-V compound semiconductive material |
| US4179486A (en) * | 1978-07-21 | 1979-12-18 | Rockwell International Corporation | Method of protecting Si3 N4 ceramic alloy during heating |
| US4234343A (en) * | 1979-01-04 | 1980-11-18 | The United States Of America As Represented By The United States Department Of Energy | Structural silicon nitride materials containing rare earth oxides |
| US4179301A (en) * | 1979-01-08 | 1979-12-18 | Gte Sylvania Incorporated | Si3 N4 containing intergranular phase nucleating agent and method |
| US4327187A (en) * | 1979-02-22 | 1982-04-27 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of producing sintered body of ceramics |
| US4412009A (en) * | 1979-02-22 | 1983-10-25 | Tokyo Shibaura Denki Kabushiki Kaisha | Sintered Si3 N4 body |
| US4280973A (en) * | 1979-11-14 | 1981-07-28 | Ford Motor Company | Process for producing Si3 N4 base articles by the cold press sinter method |
| US4310492A (en) * | 1979-11-14 | 1982-01-12 | Tokyo Shibaura Denki Kabushiki Kaisha | Apparatus for making a single crystal |
| US4332909A (en) * | 1979-11-22 | 1982-06-01 | Tokyo Shibaura Denki Kabushiki Kaisha | Silicon nitride based sintered product and method of producing the same |
| US4264550A (en) * | 1979-12-20 | 1981-04-28 | Ford Motor Company | Method of making silicon nitride base cutting tools -II |
| US4264548A (en) * | 1979-12-20 | 1981-04-28 | Ford Motor Company | Method of making silicon nitride based cutting tools-I |
| US4407970A (en) * | 1981-08-10 | 1983-10-04 | Tokyo Shibaura Denki Kabushiki Kaisha | Sintered body of ceramics and preparation thereof |
| US4407971A (en) * | 1981-09-01 | 1983-10-04 | Tokyo Shibaura Denki Kabushiki Kaisha | Sintered body of silicon nitride-based ceramics |
| US4609633A (en) * | 1983-04-22 | 1986-09-02 | Toshiba Tungaloy Co., Ltd. | Silicon nitride sintered body and method for preparing the same |
| US4547470A (en) * | 1983-04-25 | 1985-10-15 | Mitsubishi Kinzoku Kabushiki Kaisha | Sialon-base ceramic materials excellent in wear resistance |
| US4443394A (en) * | 1983-07-19 | 1984-04-17 | Ford Motor Company | Method of making a silicon nitride body from the Y2 O3 /SiO2 3 N4 /Al2 O3 |
| EP0158901B1 (en) * | 1984-03-30 | 1994-03-02 | Koyo Seiko Co., Ltd. | Rotating member supporting apparatus |
| US4715986A (en) * | 1984-03-30 | 1987-12-29 | Th. Goldschmidt Ag | Particles, modified at their surface by hydrophilic and hydrophobic groups |
| US4550063A (en) * | 1984-04-17 | 1985-10-29 | United Technologies Corporation | Silicon nitride reinforced nickel alloy composite materials |
| US4879080A (en) * | 1984-05-02 | 1989-11-07 | Gte Products Corporation | High density silicon nitride bodies |
| US4879079A (en) * | 1984-07-16 | 1989-11-07 | Gte Products Corporation | Formation of lanthanum aluminate |
| DE3537208A1 (de) * | 1984-10-22 | 1986-04-24 | United Technologies Corp., Hartford, Conn. | Formkoerper auf der basis eines gesinterten siliciumnitrids sowie ihre verwendung bei der verarbeitung schmelzfluessiger nickellegierungen |
| US4600182A (en) * | 1984-10-22 | 1986-07-15 | United Technologies Corporation | High density, sintered silicon nitride containing articles and methods for using the same to process molten nickel |
| US5017530A (en) * | 1987-01-28 | 1991-05-21 | Tosoh Corporation | Silicon nitride sintered body and process for preparation thereof |
| US5093290A (en) * | 1988-07-08 | 1992-03-03 | Nippon Tungsten Co., Ltd. | Silicon nitride type sintered bodies and method for producing the same |
| US5177038A (en) * | 1989-05-10 | 1993-01-05 | Ngk Insulators, Ltd. | Silicon nitride sintered bodies |
| US5238882A (en) * | 1989-05-10 | 1993-08-24 | Ngk Insulators, Ltd. | Method of manufacturing silicon nitride sintered bodies |
| US5096859A (en) * | 1990-02-09 | 1992-03-17 | Ngk Insulators, Ltd. | Silicon nitride sintered body and method of producing the same |
| US5145620A (en) * | 1990-02-09 | 1992-09-08 | Ngk Insulators, Ltd. | Method of producing a silicon nitride sintered body |
| US5229046A (en) * | 1990-05-17 | 1993-07-20 | Ngk Insulators, Ltd. | Process for producing thermal shock-resistant silicon nitride sintered material |
| US5173458A (en) * | 1990-12-28 | 1992-12-22 | Sumitomo Electric Industries, Ltd. | Silicon nitride sintered body and process for producing the same |
| US5275772A (en) * | 1991-05-22 | 1994-01-04 | Sumitomo Electric Industries, Ltd. | Silicon nitride sintered body and process for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1365126A (en) | 1974-08-29 |
| JPS4921091B1 (enrdf_load_stackoverflow) | 1974-05-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3969125A (en) | Heat resistive and reinforced composite material | |
| US3833389A (en) | Heat resistant and strengthened composite materials and method for producing same | |
| US4351787A (en) | Process for sintering reaction bonded silicon nitride | |
| US4354990A (en) | Process for sintering silicon nitride compacts | |
| US3551101A (en) | Preparation of sintered aluminum nitride | |
| US4761339A (en) | Sintered ceramic articles and method for production thereof | |
| US3749571A (en) | Cold-pressed compositions | |
| CA1272581A (en) | Nitriding silicon powder articles using high temperature and pressure dwells | |
| US4579699A (en) | Method for making α-Si3 N4 whiskers and articles therefrom | |
| JPS6152108B2 (enrdf_load_stackoverflow) | ||
| US4332755A (en) | Sintered silicon carbide - aluminum nitride articles and method of making such articles | |
| JPS6152111B2 (enrdf_load_stackoverflow) | ||
| US4383958A (en) | Method of producing dense silicon nitride ceramic articles having controlled surface layer composition | |
| US4539298A (en) | Highly heat-conductive ceramic material | |
| US4539300A (en) | Method for the fabrication of hexagonal BN toughened matrix composites | |
| US5126294A (en) | Sintered silicon nitride and production method thereof | |
| US5055432A (en) | Process for preparing a nitridable silicon-containing material having at least one densification aid including alumina, and the material resulting therefrom | |
| US4172109A (en) | Pressureless sintering beryllium containing silicon carbide powder composition | |
| US4552711A (en) | Use of free silicon in liquid phase sintering of silicon nitrides and sialons | |
| JPS62275063A (ja) | 炭化珪素−窒化アルミニウム焼結製品の製造法 | |
| US5166106A (en) | Silicon-containing material having at least one densification aid including alumina | |
| US5160719A (en) | Process for nitriding silicon containing materials | |
| US4205033A (en) | Process for producing compact silicon nitride ceramics | |
| US4487840A (en) | Use of silicon in liquid sintered silicon nitrides and sialons | |
| US3529046A (en) | Utilizing lithium oxide and precursors as sintering aid for hot pressing beryllium oxide |