US3925261A - Exponential resistance material and method of manufacturing same - Google Patents

Exponential resistance material and method of manufacturing same Download PDF

Info

Publication number
US3925261A
US3925261A US489182A US48918274A US3925261A US 3925261 A US3925261 A US 3925261A US 489182 A US489182 A US 489182A US 48918274 A US48918274 A US 48918274A US 3925261 A US3925261 A US 3925261A
Authority
US
United States
Prior art keywords
meo
composition
resistance
resistance element
voltage drop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US489182A
Inventor
Inge Lauterbach-Dammler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
C Conradty Nuernberg GmbH and Co KG
Original Assignee
Conradty Fa C
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732336504 external-priority patent/DE2336504C3/en
Application filed by Conradty Fa C filed Critical Conradty Fa C
Application granted granted Critical
Publication of US3925261A publication Critical patent/US3925261A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105Varistor cores
    • H01C7/108Metal oxide
    • H01C7/112ZnO type

Abstract

A voltage drop across a resistance element, wherein the resistance varies exponentially with the voltage, is expressed by the equation: E B X I1/n WHEREIN I is the current through the element, B is a constant and is equal to the voltage value at which the current through the element is equal to 1 Ampere, and E is the voltage drop. To achieve a variable B-value based on the resistance material itself and furthermore to achieve a greater dependence of the resistance on the voltage drop, the value of n can be selectively raised by varying the composition of the resistance element as follows: 50 - 90% ZnO 0.1 - 40% ZnF2 0.1 - 40% MeO wherein MeO is an oxide selected from the oxides of magnesium, calcium, strontium, barium, iron, cobalt, lead, boron, aluminum, bismuth, manganese, chromium, nickel, antimony, and mixtures thereof. An improved method of manufacturing such a resistance material is also described.

Description

United States Patent 91 Lauterbach-Dammler EXPONENTIAL RESISTANCE MATERIAL AND METHOD OF MANUFACTURING SAME [75] Inventor: Inge Lauterbach-Dammler,
[30] Foreign Application Priority Data July 18, 1973 Germany .t 2336504 [52] US. Cl. 252/519; 252/518; 252/520; 264/61; 264/67; 264/104 [51] Int. Cl. 01B 1/08 [53] Field of Search 252/518-521; 264/67, 61, 104
[56] References Cited UNITED STATES PATENTS 3,642,664 2/1972 Masuyama et a1 252/519 3,658,725 4/1972 Masuyama et a1 .t 252/519 X Primary Examiner-Benjamin R. Padgett Assistant Examiner-E. Suzanne Parr Attorney, Agent, or Firm-Gifford, Chandler & Sheridan 1 Dec. 9, 1975 [57 ABSTRACT A voltage drop across a resistance element, wherein the resistance varies exponentially with the voltage, is expressed by the equation:
E a x 1" wherein I is the current through the element, B is a constant and is equal to the voltage value at which the current through the element is equal to l Ampere, and E is the voltage drop. To achieve a variable B-value based on the resistance material itself and furthermore to achieve a greater dependence of the resistance on the voltage drop, the value of n can be selectively raised by varying the composition of the resistance element as follows:
50 90% ZnO 0.1 40% ZnF 0.1 40% MeO wherein MeO is an oxide selected from the oxides of magnesium, calcium, strontium, barium, iron, cobalt, lead, boron, aluminum, bismuth, manganese, chr0- mium, nickel, antimony, and mixtures thereof. An improved method of manufacturing such a resistance material is also described.
10 Claims, No Drawings EXPONENTIAL RESISTANCE MATERIAL AND METHOD OF MANUFACTURING SAME BACKGROUND OF THE INVENTION The invention relates to a resistance material wherein the resistance varies exponentially with the voltage drop and, more particularly, relates to a sintered ceterminal wires (pigtails) can be attached.
ramic material for non-linear resistance elements. The
invention also relates to a method of manufacturing such material.
Such resistance materials are well known and have been made from, for example, silicon carbide, titanium dioxide or zinc oxide. The voltage drop across elements made from such materials is given by the following equation:
wherein E is the voltage drop over the element, I is the current flowing through the element, and B is a constant reflecting the voltage value at current I 1 Ampere. The exponent n is, therefore, a direct measure of the magnitude of non-linearity based on p-n-transitions, on the contact among the individual grains, or on the material itself.
It is known that the B-value of a non-linear resistance element may be varied by sintering at varying temperatures and under different atmospheres. It is further known to adjust the B-value through the thickness of the resistance elements. Both procedures permit only a limited possibility of variation. Thus, when there is a change in temperature the desired n-value, in many cases, is not attained and when there is a change in thickness, desired small increments of resistance often are not attainable.
DESCRIPTION OF THE INVENTION It is therefore an object underlying the invention to provide a composition wherein the electrical resistance is greatly dependent on voltage and thus has a large nvalue anda variable B-value based on the material itself.
It is a further object to provide a method of manufacturing such a composition.
The first object is particularly advantageously solved by a composition comprising about 50-90% ZnO, about 0.1 40% ZnF and about 0.1 40% MeO; wherein MeO is an oxide selected from the oxides of magnesium, calcium, strontium, barium, iron, cobalt, lead, boron, aluminum, bismuth, manganese, chromium, nickel, antimony, and mixtures thereof. According to the invention, the B-value of the material may be varied within wide ranges by changing the ratio of the two components ZnO and ZnF,. If, meanwhile, the metal oxide content is kept unchanged, the n-value of the material remains nearly constant. However the nvalue can be adjusted to many values by varying the MeO content.
The following Examples and the Table explain in more detail the relationship of the electric properties of the compositions of the invention and the method of manufacture of the compositions.
EXAMPLE 1 Two mole each of Bi O C0 0,, MnO, and Sb O (a preferred composition) were homogeneously mixed with varying amounts of ZnO and ZnF After a presintering at 600C the material was ground, compacted to As can be seen from the values in Table l, the B- value increases nearly linearly with increasing ZnF content, whereas the n-value of 20 to 25 remains nearly constant.
EXAMPLE 2 Three mole of each of Bi.,o,, C0 0 Mn0 and Sb O were homogeneously mixed together with varying amounts of ZnO and ZnF and were further processed according to the procedure described in Example l.
The electrical values of the resulting element are listed in Table 1 (numbers 7-9). A comparison with Examples 1 to 6 shows that a small change in the metal oxide content effects a considerable change in the nvalue.
Repetition of the fore going examples with a wide variety of compositions having difiering ZnO to ZnF, ratios and difiering proportions of the oxides of the invention established that the advantages of the invention were attained when the ZnO was in the range of about 50-90%, the ZnF, was in the range of about 0.1 40%, and the MeO was in the range of about 0.1 40%. Further, the composition was found to be particularly useful when the ZnF content was about 1-8% and the MeO content was about 2-l6%.
Similarly, repetition of the above examples with presintering at various temperatures and annealing the formed element at various temperatures showed that the best forming conditions for the resistance mate rial was presintering at about 600900C and annealing at about lO00-l400C.
It is, of course, to be understood that the present invention is not limited to the specific examples given, but also comprises any modifications within the scope of the appended claims.
I claim:
1. A composition adapted for use as an electrical resistance element wherein the electrical resistance varies exponentially with the voltage drop across the elementksaigl vp ltage drop being given by the equation:
X I wherein E is said voltage drop; I is the current through the element, B is a constant equal to the voltagevalue at which the current is equal to l Ampere, and n is a number; said composition comprising about 50-90% ZnO, about 0.1 40% ZnF and about 0.1 40% MeO; wherein MeO is an oxide selected from the oxides of magnesium, calcium, strontium, barium, iron, cobalt, lead, boron, aluminum, bismuth, manganese, chromium, nickel, antimony, and mixtures thereof.
2. The composition according to claim 1 in which the ZnF proportion is about l8% and the MeO content is about 246%.
3. The composition according to claim 1 wherein said MeO is approximately equal molar proportions of Bizoa, C030, Mnoz, and Sb203.
4. The composition according to claim 2 wherein said MeO is approximately equal molar proportions of Bigoa, C0304, M1102, and sbgoa.
5. The composition according to claim 1 wherein said composition is in the form of a resistance element.
6. The method of manufacturing a composition adaptable for use as an electrical resistance element which method comprises the steps of a. forming a homogeneous mixture of about 50-90% ZnO, about 0.1 40% ZnF and about 0.1 40% MeO wherein MeO is an oxide selected from the oxides of magnesium, calcium, strontium, barium, iron, cobalt, lead, boron, aluminum, bismuth, manganese, chronium, nickel, antimony, and mixtures thereof;
b. sintering said mixture at about 600-900C.;
c. grinding the sintered mixture;
d. compacting the resulting mixture; and
e. annealing the resulting material at about 1000 7. The method according to claim 6 wherein said ground mixture is compacted to the form of a resistance element.
8. The method according to claim 6 wherein said MeO is approximately equal molar proportions of Blzoa, C0304, Mnoz, and Sb203.
9. The method according to claim 7 wherein said MeO is approximately equal molar proportions of Bi o C0 0 Mno and Sb O 10. The method according to claim 6 and further comprising the step of positioning metal electrical contacts on portions of said resistance element.

Claims (10)

1. A COMPOSITION ADAPTED FOR USE AS AN ELECTRICAL RESISTANCE ELEMENT WHEREIN THE ELECTRICAL RESISTANCE VERIES EXPONENTIALLY WITH THE VOLTAGE DROP ACROSS THE ELEMENT, SAID VOLTAGE DROP BEING GIVEN BY THE EQUATION:
2. The composition according to claim 1 in which the ZnF2 proportion is about 1-8% and the MeO content is about 2-16%.
3. The composition according to claim 1 wherein said MeO is approximately equal molar proportions of Bi2O3, Co3O4, MnO2, and Sb2O3.
4. The composition according to claim 2 wherein said MeO is approximately equal molar proportions of Bi2O3, Co3O4, MnO2, and Sb2O3.
5. The composition according to claim 1 wherein said composition is in the form of a resistance element.
6. The method of manufacturing a composition adaptable for use as an electrical resistance element which method comprises the steps of a. forming a homogeneous mixture of about 50-90% ZnO, about 0.1 - 40% ZnF2, and about 0.1 - 40% MeO wherein MeO is an oxide selected from the oxides of magnesium, calcium, strontium, barium, iron, cobalt, lead, boron, aluminum, bismuth, manganese, chronium, nickel, antimony, and mixtures thereof; b. sintering said mixture at about 600*-900*C.; c. grinding the sintered mixture; d. compacting the resulting mixture; and e. annealing the resulting material at about 1000* - 1400*C.
7. The method according to claim 6 wherein said ground mixture is compacted to the form of a resistance element.
8. The method according to claim 6 wherein said MeO is approximately equal molar proportions of Bi2O3, Co3O4, MnO2, and Sb2O3.
9. The method according to claim 7 wherein said MeO is approximately equal molar proportions of Bi2O3, Co3O4, MnO2, and Sb2O3.
10. The method according to claim 6 and further comprising the step of positioning metal electrical contacts on portions of said resistance element.
US489182A 1973-07-18 1974-07-16 Exponential resistance material and method of manufacturing same Expired - Lifetime US3925261A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732336504 DE2336504C3 (en) 1973-07-18 Voltage-dependent resistor body

Publications (1)

Publication Number Publication Date
US3925261A true US3925261A (en) 1975-12-09

Family

ID=5887280

Family Applications (1)

Application Number Title Priority Date Filing Date
US489182A Expired - Lifetime US3925261A (en) 1973-07-18 1974-07-16 Exponential resistance material and method of manufacturing same

Country Status (7)

Country Link
US (1) US3925261A (en)
FR (1) FR2237860B1 (en)
GB (1) GB1461116A (en)
IE (1) IE39620B1 (en)
IT (1) IT1017155B (en)
NL (1) NL7409767A (en)
SE (1) SE395788B (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4086189A (en) * 1975-11-14 1978-04-25 Otowa Electric Company, Ltd. Resistive element having voltage non-linearity and method of making same
US4127511A (en) * 1976-07-01 1978-11-28 Bbc Brown, Boveri & Company, Limited Ceramic electrical resistor with nonlinear voltage characteristic
US4180483A (en) * 1976-12-30 1979-12-25 Electric Power Research Institute, Inc. Method for forming zinc oxide-containing ceramics by hot pressing and annealing
US4474718A (en) * 1981-07-27 1984-10-02 Electric Power Research Institute Method of fabricating non-linear voltage limiting device
US5660878A (en) * 1991-02-06 1997-08-26 Commissariat A L'energie Atomique Process for the reduction of breakdown risks of the insulant of high voltage cable and lines during their aging
US5889459A (en) * 1995-03-28 1999-03-30 Matsushita Electric Industrial Co., Ltd. Metal oxide film resistor
US6198377B1 (en) * 1994-07-13 2001-03-06 Matsushita Electric Industrial Co., Ltd. Plastic thermistor and thermosensitive device comprising the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3642664A (en) * 1969-05-02 1972-02-15 Matsushita Electric Ind Co Ltd Voltage variable resistor
US3658725A (en) * 1970-07-24 1972-04-25 Matsushita Electric Ind Co Ltd Nonlinear resistor and nonlinear resistor composition

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3642664A (en) * 1969-05-02 1972-02-15 Matsushita Electric Ind Co Ltd Voltage variable resistor
US3658725A (en) * 1970-07-24 1972-04-25 Matsushita Electric Ind Co Ltd Nonlinear resistor and nonlinear resistor composition

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4086189A (en) * 1975-11-14 1978-04-25 Otowa Electric Company, Ltd. Resistive element having voltage non-linearity and method of making same
US4127511A (en) * 1976-07-01 1978-11-28 Bbc Brown, Boveri & Company, Limited Ceramic electrical resistor with nonlinear voltage characteristic
US4180483A (en) * 1976-12-30 1979-12-25 Electric Power Research Institute, Inc. Method for forming zinc oxide-containing ceramics by hot pressing and annealing
US4474718A (en) * 1981-07-27 1984-10-02 Electric Power Research Institute Method of fabricating non-linear voltage limiting device
US5660878A (en) * 1991-02-06 1997-08-26 Commissariat A L'energie Atomique Process for the reduction of breakdown risks of the insulant of high voltage cable and lines during their aging
US6198377B1 (en) * 1994-07-13 2001-03-06 Matsushita Electric Industrial Co., Ltd. Plastic thermistor and thermosensitive device comprising the same
US5889459A (en) * 1995-03-28 1999-03-30 Matsushita Electric Industrial Co., Ltd. Metal oxide film resistor

Also Published As

Publication number Publication date
DE2336504B2 (en) 1975-11-20
FR2237860A1 (en) 1975-02-14
NL7409767A (en) 1975-01-21
SE395788B (en) 1977-08-22
GB1461116A (en) 1977-01-13
DE2336504A1 (en) 1975-06-12
FR2237860B1 (en) 1979-04-13
IE39620B1 (en) 1978-11-22
IE39620L (en) 1975-01-18
IT1017155B (en) 1977-07-20
SE7409336L (en) 1975-01-20

Similar Documents

Publication Publication Date Title
US3663458A (en) Nonlinear resistors of bulk type
US3925261A (en) Exponential resistance material and method of manufacturing same
US3899451A (en) Oxide varistor
US4184984A (en) High breakdown voltage varistor
US3682841A (en) Voltage dependent resistors in a bulk type
GB1580929A (en) Ceramic electrical resistor with nonlinear voltage characteristic
US3766098A (en) Voltage nonlinear resistors
US3570002A (en) Non-linear resistor of sintered zinc oxide
US3836483A (en) Oxide varistor
US3842018A (en) Oxide varistor composition consisting of zno,sb2o3 and/or sb2o5,zro2,tio2 and/or geo2,and bi2o3
US4174303A (en) Ceramic electrical material with high nonlinear resistance
KR920005155B1 (en) Zno-varistor making method
JP2671133B2 (en) Manufacturing method of zinc oxide varistor
KR900001979B1 (en) Process for the preparation of voltage non-linearity type resistors
JP2546726B2 (en) Voltage nonlinear resistor
JPS6028121B2 (en) Manufacturing method of voltage nonlinear resistor
JPS6115303A (en) Method of producing oxide voltage nonlinear resistor
JPH0383846A (en) Production of varistor
CA1113191A (en) High breakdown voltage varistor
KR20040078915A (en) Zinc Oxide Sintered Body, and Manufacturing Method thereof and Zinc Oxide Varistor
JPH0439761B2 (en)
JPH0128486B2 (en)
JPS589563B2 (en) Manufacturing method of voltage nonlinear resistor
JPH0128485B2 (en)
JPH0352201A (en) Voltage nonlinear resistor