DE2336504A1 - VOLTAGE DEPENDENT RESISTANCE DIMENSIONS - Google Patents

Description

C. CONRADTY, NUREMBERG July 16, 1973

PA 3/152

Voltage-dependent resistance ground

The invention relates to a voltage-dependent resistance mass made of sintered ceramic material for non-linear resistance elements.

Various voltage-dependent resistors are known, e.g. B. on silicon carbide, titanium dioxide or zinc oxide basis. The electrical properties of such a nonlinear resistor are given by the equation

U = B. I ^H

described. Here U are the voltage across the voltage dependent Resistance element, I the current flowing through the voltage-dependent resistor and B a constant that denotes the Specifies the voltage value with the current 1 = 1 ampere. The exponent η is a direct measure of the amount of non-linearity that either on p-n junctions, on the contacts under the individual Grains or on the mass itself.

The B value of a non-linear resistance element can be through Sintering at different temperatures and under different Atmospheres can be varied. It is also known that the B value over the thickness of the voltage-dependent resistance element to adjust. Both procedures allow only a limited possibility of variation, since there is a change in temperature often the desired η value is not obtained and when the thickness is changed, the desired small values are often not obtained Dimensions for voltage-dependent resistance elements achievable are.

The object of the invention was therefore to provide a resistance measurement develop, which in addition to a large voltage dependency, i.e. a large η value, a variable one on the dimension itself has attributable B-value.

- 2 509824/0342

received cn.

According to the invention, the object is achieved by a voltage-dependent Resistance mass of the following composition:

50 1 - 90 5 0, 1 - 40 5 0, - 40 p 6 ZnO ιέ ZnP ₂ II MeO

where MeO is one or more oxides of the elements magnesium, calcium, strontium, barium, iron, cobalt, lead, boron, aluminum, Includes bismuth, manganese, or the like.

According to the invention, the B value of the resistor mass can be varied within wide ranges by changing the mixing ratio of the two components ZnO and ZnP ₂ *. If the metal oxide content is left unchanged, the η value remains almost constant. In addition, the η value of the resistor mass can be adjusted to many values by different compositions of the MeO content.

These relationships of the electrical properties of the voltage-dependent Resistance mass according to the invention will be explained in more detail using the two following exemplary embodiments will.

Example 11

2 mol 56 Bi ₂ O ,, Co, Oj, MnO ₂ and Sb ₃ O, together with varying amounts of ZnO / Zn]? ₂ mixed homogeneously. After a pre-sintering at 600 to 900 ⁰ C, the mass is ground, compressed: and annealed at 1000 to 14-00 ⁰ C. Finally, the voltage-dependent resistors are contacted by plasma tips of brass or by coating with conductive silver, and connecting wires are attached if necessary.

As can be seen from the values in Table 1, the BW «rt ait increasing« Zn? ₂ -G * stops almost linearly, while the η value ait 20 to 25 remains almost constant.

509824/0342

received on

Example 2t

3 mol $> BipO ,, Οο, Ο *, MnOp and Sb ₂ O are mixed homogeneously together with varying amounts of ZnO / ZnFp and processed further according to the method described in Example 1.

The electrical values can be found in Table 1, No. 7 - 9. A comparison with the examples Ur. 1-6 shows that the change in the metal oxide content is a significant increase of the η value.

509824/0342

τ— CM Ο O CM LTv O to 5- to d CM CM CM C- CM O C- IfN τ— ^ __ • Η VO LTv to to O CM CO to Φ CTi CM IfN to 1- CM - r— CM CM ■ <* · Λ pq CM to to to CM to O
CM CM CM CM CM CQ CM to to CVJ H CM to (mo • CM CM CM CM CM to to CM to O
to CM CM CM CM O O CM IO to to CM to CM CM CM CM CM •H pq CM CM I. to Τ "· to θ H
O ω VO O C- CM IfN KJ O CM τ— VO 00 VO 00 O CM O OO ω VO OO α ■ ON ON 00 C- VO C- ON tSJ CO Ι CM to

60982A / 03A2

Claims (3)

Patent claims: 1) voltage-dependent resistance mass, characterized by the composition 50 - 90 # ZnO 0.1 - 40 $ ZNP ₂ 0.1 - 4-0 # MeO where MeO is one or more oxides of the elements magnesium, calcium, strontium, barium, iron, manganese, lead, boron, aluminum, Includes chromium, cobalt, nickel, antimony, bismuth. 2) The voltage-dependent resistor composition according to claim 1, characterized in that the resistance mass is preferably a zinc fluoride level of from 1 to 8 <j "and a metal oxide 2-16 i> having. 3) Voltage-dependent resistance mass according to claim 1, characterized in that the B-value of the resistance mass can be adjusted _{by changing the ratio ZnO / ZnF 2.} C. COHEADTY, NUREMBEEG INWP-Irg / - 509824/0342