US3916508A - Method of making a reference voltage source with a desired temperature coefficient - Google Patents

Method of making a reference voltage source with a desired temperature coefficient Download PDF

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US3916508A
US3916508A US447514A US44751474A US3916508A US 3916508 A US3916508 A US 3916508A US 447514 A US447514 A US 447514A US 44751474 A US44751474 A US 44751474A US 3916508 A US3916508 A US 3916508A
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voltage
voltage divider
diodes
conductively
trimming
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US447514A
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English (en)
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Gerhard Conzelmann
Hartmut Seiler
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Robert Bosch GmbH
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Robert Bosch GmbH
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/18—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/468—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC characterised by reference voltage circuitry, e.g. soft start, remote shutdown
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/225—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/983—Zener diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making

Definitions

  • the invention relates .to a method ofv making source of reference voltage having a desired high stability with respect to temperature or a desired temperature coefficient of voltage.
  • the first formula stating a condition to be met according to the invention, is in terms of k, the number of Zener diodes in cascade, which is at least I; the number l of conductive diodes in series with the Zener diodes, which may be the number m, which may be 0, of conductive diodes connected in seriesvwith the voltage divider and connected on that side of the voltage divider where the voltage drop is not included in the output voltage, and the number n of conductive diodes in series with the voltage divider and connected on the other side of the voltage divider (where the voltage drop is included in the output voltage), which number is at least 1.
  • I is the voltage drop at the reference temperature To for the conductively driven diodes, in volts
  • A is the constant portion of the temperature coefficient of th Zener diodes in K
  • A is the temperature coefficiel in K of the-conductively poled diodes when conduc ing
  • E is the desired temperature coefficient of ti".
  • reference voltage U likewise in "l( and A is the ten perature coefficient in "K of the diodes operated i their conducting state. Their relation with reference 1 Which the voltage divider is balanced by trimming tl".
  • voltag drop per diode U and the temperature coefficient A of the diodes operated in their conducting conditio can be chosen in such a manner that the equation fir above mentioned is satisfied, not merely approx mately, but exactly.
  • the quotient on the right hand sic' of this equationthen becomes a whole number (ll'ltt ger).
  • FIG. 1 is a diagram of a circuit having two branch: in parallel which is shown to illustrate the definition the numbers k, l, m, and n;
  • FIGS. 2 12 are circuit diagrams of preferred en bodiments of reference voltage sources in accordanc with the invention.
  • FIGS. l3, l4 and 15 show subdivisions of a resistc into elementary resistors for trimming the voltage d vider to adjust ,the circuit in the case of a referenc voltage source built as a monolithic integrated circui and FIGS. 16 and 17 are circuit diagrams of combinatior of a reference voltage source and a following voltag regulator to constitute voltage stabilizers shown as e: amples of application of the manufacturing method the invention.
  • FIG.'1 shows a diagram in general form of a refe' ence voltage source consisting of two current carryin circuit branches connected in parallel to each othc and carrying an aggregate current I.
  • the first circu branch shown at the left, contains a series chain of number I of conductively operated diodes and an nun ber k of cascaded Zener diodes.
  • the second circu branch contains, in series, a number m of conductive] operated diodes connected one behind the other,
  • tage divider composed of two ohmic resistances R IR; and a number n of conductively operated diodes mected one behind the other.
  • One of the places are the two circuit branches are connected together rie so called foot point of the circuit where the anode :he k-th Zener diode and the cathode of the conduc- :ly operated diode which is last in the direction of N of positive current in the second circuit branch.
  • 3 output reference voltage U is taken from the cirt between the common connection point of the two nic resistances R and R and the connection point istituting the above identified foot point of the cirt.
  • the voltage drop across each of the conductively :rated diodes is designated L1,
  • the breakdown tage of each of the Zener diodes is designated U plying Kirchhoffs law
  • the reference voltage U is an by the following expression:
  • T is the absolute temperature
  • To is the reference iperature
  • A signifies the temperature coefficient of Zener diode and U represents the breakdown tage at d O, that is, when T To.
  • Equations 15) and 16) were derived for a tempera ture coefficient E of the reference voltage U that ma; have any desired value. That means that for all refer ence voltage generator circuits that satisfy the condi tion 15) or in the case of greater accuracy require ments the condition [1+ E (T- To)] In connection with this trimming or balancing opera tion it is to be noted that the conditions (15) and (26) which limit the range of combination of Zener and con ductively operated diodes, are independent of the de ed temperature coefficient E of the reference voltage
  • the circuits of the present invention thus have the )perty that by setting the reference voltage U, by nming the voltage divider R,, R at the temperature to a value specified by equation (l6), the temperae coefficient E of the reference voltage U, is simulta- )usly adjusted to the desired value, so that the tern; rature coefficient of the reference .voltagebecomes lependent of the scatter of the breakdown voltage ues of the Zen
  • circuits that satisfy the equation 1 be produced with conventional manufacturing hniques utilizing discrete partly integrated compoats on printed circuit plates or utilizing thick or thin n techniques on insulating substrates.
  • the monoiicintegrated circuit form of construction however, ers particular advantages because of the good ther- .l coupling of the elements.
  • IO. 2 shows the' simplest embodiment.
  • a single ner diode Z is provided in the first circuit branch. parallel to the Zener diode Z, there are, in the direcn of flow of positive current, the series connection the voltage divider composed of the two ohmic resislces R, andR, and then, in succession, two conductly operated diodes D, and D all of these forming second circuit branch.
  • )m equation (26) it follows that n 2.
  • -IG. 3 shows, as a second embodiment, a reference .tage source having its first circuitbranc h, as enurated in the direction ofthe flow of positive current, :onductively operated diode D and a single Zener ide Z, in series.
  • the second circuit branch enumerng the components in the same order, containsthe tage divider composed of the two ohmic resistances andR, and a succession of three conductively operd diodes D,, D, and D all in series.
  • -.refore k I, m O and l 1.
  • ollows that n 3.
  • V "IG. 4 shows a modification of the embodiment of 3. 3. The difference is that in FIG.
  • the two diodes and D are replaced by a single diode D, which is nmon to both circuit branches and connected to the called foot point of the circuit.
  • the shared diode D5,, .0 selected that it can operate with the same current isity that is present in the other conductively oper d diodes D, and D I V v I I n the embodiment *shown in FIG. 5 thereisagain y a single Zener diode' Z, inthe first circuit branch.
  • the second circuit branch connected in parallel to sZener diode is the series connection of a first con- :tively operated diode D,, the voltage divider com- ;ed of the two ohmic resistances R, and R and a sec- 1 conductively operated diode D
  • FIG. 6 shows a modification of the embodiment of i. 5.
  • the first conduc tively operated diode D, of FIGJS is constituted by the base-emitter path of aa transistor'T
  • the first circuit branch contains, enumerating the elements in the direction of the flow of positive current, a conductively operated diode D and a single Zener diode Z,, in series.
  • forming the second circuit branch is the series connection of a first conductively operated diode D,, the voltage divider composed of the two ohmic resistances R, and R and two further conductively operated diodes D and D in'succession.
  • k i 1, I l ancl m I From equation (26') it follows that n 2.
  • FIG. 8 shows a modification of the embodiment of FIG. 7. The difference is that in FIG. 8 two diodes D and D, of FIG. 7 are replaced by a single diode D common to both circuit branches.
  • the shared diode D is so selected that itmay operate at the same current density as do the other conductively operated diodes D, and D t
  • the first circuit branch is composed of a series connection of a conductively operated diode D and a single-Zener diode-Z,.
  • the first circuit branch again is composed of a single Zener diode Z,.
  • the cathode of the second conductively operated diode D is connected to the anode of the Zener diode Z,.
  • the cathode of the Zener diode Z is connected to the non-inverting differential input of an. operational amplifier 0,, the output of which is connected both to its inverting differential input and to that end the first ohmic resistance R, of the voltage divider which is not connected to the second ohmic resistance R,.
  • FIG. 12 shows an embodiment in which two Zener diodes Z, and Z, are provided in the first circuit branch.
  • the voltage divider composed of the two ohmic resistances R, and R, and then, in succession, four conductively operated diodes D,, D D and D,.
  • n 4 This circuit is analogous to FIG. 2, which is the simplest of the embodiments described above utilizing a single Zener diode.
  • circuits with two Zener diodes can be developed corresponding to the other preferred circuits described above, and likewise also circuits utilizing three Zener diodes.
  • FIG. 4 in the same way as in FIG. 2 and treats FIG. 4 as a case of l 0, m 0 and n 2, with the'further fact that p 1, which is irrelevant to equations and (26), (since ifp is added to both land n it drops out of the equation).
  • the monolithic integrated circuit form of construction is used, it would be natural to provide the conductively operated diodes in the form of emitter diodes and the resistances R and R by means of a base diffusion zone, in which case the unavoidable path resistance of the conductively operated diodes will constitute a portion of the resistance R or of the resistance R or both, as the case may be, and these path resistances will all have the same thermal behavior.
  • trimming can be done by means of a potentiometer.
  • a more exact procedure is the trimming of film resistances by means of a sand jet (sandblasting) or a laser beam (easer beam cutting) or by electrochemical etching or oxidation (electrochemical action) of the resistances R R or both.
  • FIG. 13 shows such a development of the resistance R,.
  • the component resistors are designated R R R R R R represents the smallest possible value for the resistor R and is not short-circuited. It is advantageous to provide the resistance values of the shortcircuited component resistors R R R in such a way that these values are in the progression 1 2 4 8 The more accurately the reference voltage U is to be set, the more component resistors are necessary.
  • the trimming process is desirably combined with the now conventional premeasurement procedure applied to the chips at a wafer test station of the manufacturing process.
  • the measuring apparatus of the wafer test equipment measures the actual value of the reference voltage U
  • a computer coupled to th measuring equipment calculates, from the differenc between the measured value and the desired valur what combination of component resistors must b added in circuit to the component resistor R or R 2 the case may be (the minimum operating resistors), i order to reach the prescribed design value at whic equation (16) will be fulfilled.
  • th operation increases the effective resistance in the ci: cuit, it may be referred to properly as trimming" th voltage divider, since it brings the voltage divider to desired permanent condition, and the word trimming is herein used in a sense broad enough to comprehen the operation just described.
  • resistances of'relatively low ohmic value are nece: sary, these can be provided by connecting in parallr two or more resistors R R all of the same gr ometry, in accordance with FIG. 14.
  • FIG. 16 shows an example of the application of th source of reference voltage according to the preset invention as part of a circuit for stabilizing a voltagi that circuit consisting of the source of reference vol age and a voltage regulator.
  • U is the unstabilized inpl voltage and U is the stabilized output voltage.
  • the ui stabilized input voltage U,,- is applied to the supply vol age terminals 1 and 2 of an operational amplifier 0
  • the noninverting input of the operational amplifier l is connected to the reference voltage U, taken from tl"v reference voltage source at the common connection the resistors R and R of the voltage divider of the re erence voltage source.
  • the reference voltage source i accordance with the invention, has a diode combin: tion in its two circuit branches which satisfies equatio (15).
  • the inverting input of the operational amplifu 0 is connected to the common connection point of tt two ohmic resistances R and R.,, which constitute second voltage divider.
  • the output 3 of the operation amplifier 0 is connected with the free end of the resi tor R
  • the free end of the resistor R is connected 1 the second terminal 2 of the supply voltage and also 1 the connection point 4 of the two circuit branches 1 the reference voltage source, where the k-th Zen diode of the first circuit branch is connected to the n-1 conductively operated diode of the second circu branch (this illustrated embodiment is the connectic point of the single Zener diode 2, with the second (:01 ductively operated diode D
  • the stabilized outpi voltage U A of the voltage stabilizer appears betwee the output 3 of the operational amplifier 0 and the seond terminal 2 of the supply voltage of the operation amplifier.
  • FIG. 17 a voltage stabilizer is show in FIG. 17 in which the operational amplifier I.) of Fl( 16 is made up of the differential amplifier formed t the two transistors T and T and the resistor R ti gether with the transistor T driven by the differenti amplifier by means of the resistor R 1 the case of heretofore known voltage stabilizers nposed along the lines of FIG. 16 and FIG. 17 with using reference voltage sources of the present in tion, the stabilized output voltage U, is either not usted by trimming to the desired design value or else djusted by changing the second voltage divider R 1 a further application of the invention, however, stabilized output voltage U of the circuits shown IGS.
  • 16 and 17 is trimmed to bring it to the desired cifications, not in the usual way by trimming the :age divider R R but rather by trimming of the :age divider R R of the reference voltage source.
  • 5 operation proceeds as follows: from the desired tperature coefficient of the stabilized output voltage which is the same as the temperature coefficient E he reference voltage U the reference voltage U the reference temperature T is calculated by refere to equation (16).
  • the second voltage divider R is then so dimensioned that it provides the desired put voltage U, when the reference voltage has the re U This is the case when the divider ratio is itransistor can be used as a Zener diode.
  • the con-" tively operated diodes can be diodes having pn- :tions, diodes formed by metal-to-semiconductor tacts or partly pn-junction diodes and partly al-to-semiconductor diodes.
  • Each of these" diodes also be provided by the base-emitter path of a tran- Jr connected for conductive operation, that is, :d in the direction of conduction. In this last men- .ed case, the collectors of these transistors can in le'cases be utilized for further purposes, for eitam-' onnection with FIG. 6. I f 'e claim:
  • v I 4s forgeneration of -a constantcurrent, as indicated v I is exactly'satisifed for the particularnumbers l, k, v m 5 and n of diodes contained in said twoparallel circuits.
  • A is the temperature coefficient of the conductively poled diodes in their conductive state, in K,
  • E is said desired temperature coefficient of said reference voltage U in K and U is the voltage drop per diode in volts across the conductively poled diodes during conduction at the reference temperature T and the temperature coefficient E of the reference voltage U, is set equal to the desired temperature coefficient of the stabilized output voltage U,..
  • a A is the constant portion of the temperaturecoeffici ent of the Zener diodes in K A is the temperature coefficient of the conductively poled diodes in their conductive state
  • K B is the voltage-dependent portion of the temperature coefficient of the Zener diode(s) involts pel K
  • J U is the voltage drop per diode in volts across the conductively poled diodes duringconduction at the reference temperature T
  • I f' E is said desired temperature coefficient of said reference voltage U in K' i i 13.
  • the vresaid step preceding the step of modifying voltage 'ider resistance values is carried out by constituting ircuit in which the number of diodes in the two par- :l circuits designated by l. k, m and n satisfies the adition least approximately equals 2.
  • a method as defined in claim 13 in which a refer- :e voltage source is produced in monolithic inteltfid circuit form and in which the trimming of said tage divider (R,, R is carried out on a monolithic egrated circuit chip.
  • a method as defined in claim 13 in which at least a of the resistors (R R constituting said voltage ider is subdivided into at least two resistor portions for purposes of trimming and that the trimming step is carried out by the interruption of at least one conduction path by which said resistor portions were originally interconnected.

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US447514A 1973-03-23 1974-03-04 Method of making a reference voltage source with a desired temperature coefficient Expired - Lifetime US3916508A (en)

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DE2314423A DE2314423C3 (de) 1973-03-23 1973-03-23 Verfahren zur Herstellung einer Referenzgleichspannungsquelle

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US (1) US3916508A (enrdf_load_stackoverflow)
JP (1) JPS5734523B2 (enrdf_load_stackoverflow)
DE (1) DE2314423C3 (enrdf_load_stackoverflow)
FR (1) FR2222692B1 (enrdf_load_stackoverflow)
GB (1) GB1459676A (enrdf_load_stackoverflow)
IT (1) IT1007665B (enrdf_load_stackoverflow)
NL (1) NL167040C (enrdf_load_stackoverflow)

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US4074181A (en) * 1975-12-04 1978-02-14 Rca Corporation Voltage regulators of a type using a common-base transistor amplifier in the collector-to-base feedback of the regulator transistor
US4079308A (en) * 1977-01-31 1978-03-14 Advanced Micro Devices, Inc. Resistor ratio circuit construction
US4093907A (en) * 1975-11-28 1978-06-06 Licentia Patent-Verwaltungs-G.M.B.H. Reference source for producing a current which is independent of temperature
US4263544A (en) * 1978-04-05 1981-04-21 U.S. Philips Corporation Reference voltage arrangement
US4356379A (en) * 1978-01-13 1982-10-26 Burr-Brown Research Corporation Integrated heating element and method for thermal testing and compensation of integrated circuits
WO1985001134A1 (en) * 1983-08-30 1985-03-14 Analog Devices, Incorporated A temperature-compensated zener voltage reference
US4652144A (en) * 1984-05-10 1987-03-24 Robert Bosch Gmbh Temperature sensing semiconductor circuit
US4677369A (en) * 1985-09-19 1987-06-30 Precision Monolithics, Inc. CMOS temperature insensitive voltage reference
EP0143788B1 (en) * 1983-03-17 1988-07-27 Motorola, Inc. Voltage reference circuit
US4774452A (en) * 1987-05-29 1988-09-27 Ge Company Zener referenced voltage circuit
US5519313A (en) * 1993-04-06 1996-05-21 North American Philips Corporation Temperature-compensated voltage regulator
EP0860762A3 (de) * 1997-02-25 1999-04-07 TEMIC TELEFUNKEN microelectronic GmbH Schaltungsanordnung und Verfahren zum Erzeugen einer Versorgungsgleichspannung
US6183131B1 (en) * 1999-03-30 2001-02-06 National Semiconductor Corporation Linearized temperature sensor
US20080180082A1 (en) * 2007-01-29 2008-07-31 Inventec Corporation Power regulator with constant voltage output
EP1969693A4 (en) * 2005-12-07 2009-02-25 Byd Co Ltd PROTECTIVE CIRCUITS FOR ACCUMULATORS
CN100585532C (zh) * 2006-12-08 2010-01-27 英业达股份有限公司 恒压输出的电源稳压器
US20150370279A1 (en) * 2013-06-20 2015-12-24 Fuji Electric Co., Ltd. Reference voltage circuit
CN106033227A (zh) * 2015-03-20 2016-10-19 北大方正集团有限公司 基准电压源电路
US9685273B2 (en) * 2012-11-02 2017-06-20 Rohm Co., Ltd. Chip capacitor, circuit assembly, and electronic device
CN112306131A (zh) * 2019-07-29 2021-02-02 艾普凌科有限公司 基准电压电路
EP4459416A1 (en) * 2023-04-11 2024-11-06 Honeywell International Inc. Low noise bandgap voltage reference circuits

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DE2553763C3 (de) * 1975-11-29 1982-08-19 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur Herstellung einer elektronischen Schaltung
US4313083A (en) 1978-09-27 1982-01-26 Analog Devices, Incorporated Temperature compensated IC voltage reference
NL7907161A (nl) * 1978-09-27 1980-03-31 Analog Devices Inc Geintegreerde temperatuurgecompenseerde spannings- referentie.
JPS5632221U (enrdf_load_stackoverflow) * 1979-08-10 1981-03-30
JPH0124646Y2 (enrdf_load_stackoverflow) * 1979-09-28 1989-07-26
JPH0517695Y2 (enrdf_load_stackoverflow) * 1981-01-23 1993-05-12
JPS57197622A (en) * 1981-05-29 1982-12-03 Canon Inc Circuit for driving coil current
JPS5922433A (ja) * 1982-07-29 1984-02-04 Toshiba Corp 温度補償用回路
EP2365413B1 (en) * 2008-12-09 2014-07-02 Nippon Telegraph And Telephone Corporation Voltage generator, control circuit, vector synthesis type phase shifter and optical transceiver
CN111443752A (zh) * 2020-04-20 2020-07-24 国网辽宁省电力有限公司电力科学研究院 一种直流标准源电压输出量精细化调节装置

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US3497794A (en) * 1967-04-05 1970-02-24 Collins Radio Co Internal reference voltage source equipped switching regulator
US3534245A (en) * 1967-12-08 1970-10-13 Rca Corp Electrical circuit for providing substantially constant current
US3582688A (en) * 1969-02-06 1971-06-01 Motorola Inc Controlled hysteresis trigger circuit
US3612984A (en) * 1970-05-08 1971-10-12 Motorola Inc Negative voltage regulator adapted to be constructed as an integrated circuit
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Cited By (31)

* Cited by examiner, † Cited by third party
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US4093907A (en) * 1975-11-28 1978-06-06 Licentia Patent-Verwaltungs-G.M.B.H. Reference source for producing a current which is independent of temperature
US4074181A (en) * 1975-12-04 1978-02-14 Rca Corporation Voltage regulators of a type using a common-base transistor amplifier in the collector-to-base feedback of the regulator transistor
US4079308A (en) * 1977-01-31 1978-03-14 Advanced Micro Devices, Inc. Resistor ratio circuit construction
US4356379A (en) * 1978-01-13 1982-10-26 Burr-Brown Research Corporation Integrated heating element and method for thermal testing and compensation of integrated circuits
US4263544A (en) * 1978-04-05 1981-04-21 U.S. Philips Corporation Reference voltage arrangement
EP0143788B1 (en) * 1983-03-17 1988-07-27 Motorola, Inc. Voltage reference circuit
US4562400A (en) * 1983-08-30 1985-12-31 Analog Devices, Incorporated Temperature-compensated zener voltage reference
WO1985001134A1 (en) * 1983-08-30 1985-03-14 Analog Devices, Incorporated A temperature-compensated zener voltage reference
US4652144A (en) * 1984-05-10 1987-03-24 Robert Bosch Gmbh Temperature sensing semiconductor circuit
EP0160836A3 (en) * 1984-05-10 1987-06-16 Robert Bosch Gmbh Temperature sensor
US4677369A (en) * 1985-09-19 1987-06-30 Precision Monolithics, Inc. CMOS temperature insensitive voltage reference
US4774452A (en) * 1987-05-29 1988-09-27 Ge Company Zener referenced voltage circuit
US5519313A (en) * 1993-04-06 1996-05-21 North American Philips Corporation Temperature-compensated voltage regulator
US6150874A (en) * 1997-02-25 2000-11-21 Temic Telefunken Microelectronic Gmbh Circuit layout and process for generating a supply DC voltage
EP0860762A3 (de) * 1997-02-25 1999-04-07 TEMIC TELEFUNKEN microelectronic GmbH Schaltungsanordnung und Verfahren zum Erzeugen einer Versorgungsgleichspannung
US6183131B1 (en) * 1999-03-30 2001-02-06 National Semiconductor Corporation Linearized temperature sensor
EP1969693A4 (en) * 2005-12-07 2009-02-25 Byd Co Ltd PROTECTIVE CIRCUITS FOR ACCUMULATORS
US20090315517A1 (en) * 2005-12-07 2009-12-24 Fang Chen Protective circuits for secondary battery packs
US8129948B2 (en) 2005-12-07 2012-03-06 Byd Company Limited Protective circuits for secondary battery packs
CN100585532C (zh) * 2006-12-08 2010-01-27 英业达股份有限公司 恒压输出的电源稳压器
US20080180082A1 (en) * 2007-01-29 2008-07-31 Inventec Corporation Power regulator with constant voltage output
US7579813B2 (en) * 2007-01-29 2009-08-25 Inventec Corporation Power regulator having a voltage regulator module and having a voltage buffer module to provide a constant voltage output
US10026557B2 (en) 2012-11-02 2018-07-17 Rohm Co., Ltd. Chip capacitor, circuit assembly, and electronic device
US9685273B2 (en) * 2012-11-02 2017-06-20 Rohm Co., Ltd. Chip capacitor, circuit assembly, and electronic device
US10593480B2 (en) 2012-11-02 2020-03-17 Rohm Co., Ltd. Chip capacitor, circuit assembly, and electronic device
US9477251B2 (en) * 2013-06-20 2016-10-25 Fuji Electric Co., Ltd. Reference voltage circuit
US20150370279A1 (en) * 2013-06-20 2015-12-24 Fuji Electric Co., Ltd. Reference voltage circuit
CN106033227A (zh) * 2015-03-20 2016-10-19 北大方正集团有限公司 基准电压源电路
CN112306131A (zh) * 2019-07-29 2021-02-02 艾普凌科有限公司 基准电压电路
US11402863B2 (en) 2019-07-29 2022-08-02 Ablic Inc. Reference voltage circuit
EP4459416A1 (en) * 2023-04-11 2024-11-06 Honeywell International Inc. Low noise bandgap voltage reference circuits

Also Published As

Publication number Publication date
NL167040C (nl) 1981-10-15
DE2314423A1 (de) 1974-10-03
DE2314423C3 (de) 1981-08-27
DE2314423B2 (de) 1975-09-25
GB1459676A (en) 1976-12-22
NL167040B (nl) 1981-05-15
FR2222692A1 (enrdf_load_stackoverflow) 1974-10-18
NL7403928A (enrdf_load_stackoverflow) 1974-09-25
JPS5734523B2 (enrdf_load_stackoverflow) 1982-07-23
FR2222692B1 (enrdf_load_stackoverflow) 1978-02-10
IT1007665B (it) 1976-10-30
JPS49128250A (enrdf_load_stackoverflow) 1974-12-09

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