US3901703A - Xeroradiographic plate - Google Patents

Xeroradiographic plate Download PDF

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Publication number
US3901703A
US3901703A US436019A US43601974A US3901703A US 3901703 A US3901703 A US 3901703A US 436019 A US436019 A US 436019A US 43601974 A US43601974 A US 43601974A US 3901703 A US3901703 A US 3901703A
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United States
Prior art keywords
layer
selenium
microns
thickness
elements
Prior art date
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Expired - Lifetime
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US436019A
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English (en)
Inventor
Helmut Baum
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Alcatel Lucent NV
Original Assignee
International Standard Electric Corp
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Publication date
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Assigned to ALCATEL N.V., DE LAIRESSESTRAAT 153, 1075 HK AMSTERDAM, THE NETHERLANDS, A CORP OF THE NETHERLANDS reassignment ALCATEL N.V., DE LAIRESSESTRAAT 153, 1075 HK AMSTERDAM, THE NETHERLANDS, A CORP OF THE NETHERLANDS ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: INTERNATIONAL STANDARD ELECTRIC CORPORATION, A CORP OF DE
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08207—Selenium-based
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
    • G03G5/0433—Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/14—Inert intermediate or cover layers for charge-receiving layers

Definitions

  • a xeroradiographic plate or foil has a nonconducting selenium layer.
  • the X-ray absorption of the selenium layer is impmved by additions of elements of high atomic number or chemical compounds of such elements especially lead, thallium and elements of the rare earth group.
  • the selenium consists of three layers, one layer of pure selenium, a second layer with additions of high atomic number elements and a third layer with an addition of arsenic.
  • This invention relates to a xeroradiographic element in which a selenium layer is arranged on a conducting substrate.
  • the selenium layer support consists of two layers of aluminum between which there is positioned a layer of lead.
  • the top aluminum layer carries a non-conducting layer of aluminum oxide on which the selenium layer is deposited.
  • a xeroradiographic element comprising a conducting substrate, and a selenium layer on said substrate, said selenium layer containing at least one element having a high atomic weight as an additive.
  • FIG. 1 is a sectional view of a first embodiment of a xeroradiographic element
  • FIG. 2 is a sectional view of a second embodiment of a xeroradiographic element.
  • Lead can be used as a suitable element for the intermediate layer. It is also possible, however, to use other elements with a high atomic weight, such as thallium and elements of the rare earth group.
  • the share of selenium layer in the addition depends on the electrical conductivity of the added substance.
  • the share of selenium layer in elements may amount up to 10 per cent by weight, while non-conducting chemical compounds may amount up to 50 per cent by weight of the selenium layer.
  • the selenium layer with an addition of elements with a high atomic weight or of chemical compounds of such elements, will then form an intermediate selenium layer.
  • the thickness of this layer is between 1 and 50 microns, preferably 30 microns.
  • the intermediate selenium layer between two selenium layers, one of which consists of pure selenium and the other of selenium containing additions for preventing crystallization.
  • pure selenium it is understood that selenium having a purity of about 99.99 per cent is meant.
  • arsenic is used as an addition for preventing crystallization.
  • the layer arrangement is made in such a way that a layer of pure selenium is arranged on a conducting substrate, followed by a selenium layer with additions of high atomic weight elements or chemical compounds of such elements, and on this there is deposited a selenium layer with an addition of a crystallization retarding agent.
  • a layer of pure selenium is arranged on a conducting substrate, followed by a selenium layer with additions of high atomic weight elements or chemical compounds of such elements, and on this there is deposited a selenium layer with an addition of a crystallization retarding agent.
  • the pure selenium layer it is particularly favorable for the pure selenium layer to be thinner than the selenium layer containing the addition of a crystallization-retarding agent.
  • a plate or foil of aluminum or steel is used as the substrate.
  • foils i.e. aluminum or steel foils having a thickness of about 0.1 mm.
  • an intermediate layer is required between the lowest selenium layer and the conducting substrate for improving adherence of the selenium layer to the substrate.
  • an intermediate layer of polyvinylacetal containing an addition of lampblack and/or graphite for increasing the conductivity.
  • the individual selenium layers are deposited onto the substrate preferably by way of evaporation under vacuum.
  • FIGS. 1 and 2 of the accompanying drawing schem atically show two preferred examples of embodiment relating to xeroradiographic elements according to the invention, in sectional views.
  • the element according to FIG. 1 consists of a conducting substrate 1 of aluminum or steel having a thickness ranging between 50 and 200 microns.
  • a layer 2 of pure selenium having a purity degree of 99.99 per cent and a thickness ranging from 5 to 50 microns.
  • the selenium layer 3 containing an addition of a high atomic weight element. preferably lead or a lead compound, with the thickness thereof ranging between 1 and 50 microns.
  • arsenic is used as such an addition.
  • This layer may have a thickness of between 1 and 50 microns.
  • the content of arsenic preferably amounts to 0.5 per cent by weight.
  • the conducting substrate 1 consists of a foil of alu minum or steel having a thickness of about 0.1 mm.
  • a layer 5 consisting of a conductive lacquer of polyvinylacetal comprising additions of lampblack and/or graphite, and which is preferably deposited by way of spraying.
  • the layer 5 preferably has a thickness of between 0.5 and 2 microns.
  • the layer 5 carries a selenium layer 2 of pure selenium with a thickness of l to microns.
  • the selenium layer 3 containing a high atomic weight element, preferably lead. with a thickness of up to microns.
  • the last layer 4 consists of selenium containing a crystallization-retarding agent, preferably arsenic, and may have a thickness ranging between 2 and 30 microns.
  • a xeroradiographic element comprising:
  • an intermediate layer of selenium having a lead additive said intermediate layer disposed on said pure selenium layer and having a thickness of up to 30 microns;
  • top layer of selenium containing an additive of 0.5 percent by weight arsenic as a crystallizationretarding agent, said top layer having a thickness of 2 to 30 microns.
  • a xeroradiographic element comprising:
  • an aluminum substrate having a thickness of 50 to 200 microns
  • an intermediate layer of selenium having a lead additive said intermediate layer disposed on said pure selenium layer and having a thickness of l to 50 microns;
  • top layer having a thickness of l to 50 microns.
US436019A 1973-02-03 1974-01-23 Xeroradiographic plate Expired - Lifetime US3901703A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2305407A DE2305407C3 (de) 1973-02-03 1973-02-03 Elektroradiografisches Aufzeichnungsmaterial

Publications (1)

Publication Number Publication Date
US3901703A true US3901703A (en) 1975-08-26

Family

ID=5870892

Family Applications (1)

Application Number Title Priority Date Filing Date
US436019A Expired - Lifetime US3901703A (en) 1973-02-03 1974-01-23 Xeroradiographic plate

Country Status (9)

Country Link
US (1) US3901703A (pt)
JP (1) JPS5218582B2 (pt)
BR (1) BR7400708D0 (pt)
CH (1) CH589873A5 (pt)
DE (1) DE2305407C3 (pt)
ES (1) ES422826A1 (pt)
FR (1) FR2216608B1 (pt)
GB (1) GB1456724A (pt)
NL (1) NL7400954A (pt)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4021375A (en) * 1975-09-15 1977-05-03 Rca Corporation Method of fabricating polycrystalline selenium imaging devices
US4609605A (en) * 1985-03-04 1986-09-02 Xerox Corporation Multi-layered imaging member comprising selenium and tellurium
US5085959A (en) * 1988-08-11 1992-02-04 Fuji Electric Co., Ltd. Se or se alloy electrophotographic photoreceptor
US5436101A (en) * 1993-08-20 1995-07-25 Xerox Corporation Negative charging selenium photoreceptor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3029852C2 (de) * 1980-08-07 1984-02-16 Standard Elektrik Lorenz Ag, 7000 Stuttgart Elektrofotografisches Aufzeichnungsmaterial
JPS6165253A (ja) * 1984-09-07 1986-04-03 Fuji Electric Co Ltd 電子写真用感光体

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3350595A (en) * 1965-11-15 1967-10-31 Rca Corp Low dark current photoconductive device
US3427157A (en) * 1964-12-28 1969-02-11 Xerox Corp Xerographic process utilizing a photoconductive alloy of thallium in selenium
US3501343A (en) * 1966-02-16 1970-03-17 Xerox Corp Light insensitive xerographic plate and method for making same
US3574140A (en) * 1968-02-26 1971-04-06 Us Navy Epitaxial lead-containing photoconductive materials
US3647427A (en) * 1969-08-27 1972-03-07 Canon Kk Germanium and silicon additives to dual-layer electrophotographic plates
US3655377A (en) * 1966-10-03 1972-04-11 Xerox Corp Tri-layered selenium doped photoreceptor
US3709683A (en) * 1970-12-18 1973-01-09 Xerox Corp Infrared sensitive image retention photoreceptor
US3712810A (en) * 1970-12-18 1973-01-23 Xerox Corp Ambipolar photoreceptor and method
US3794842A (en) * 1972-12-13 1974-02-26 Horizons Research Inc Generation of radiographs
US3813243A (en) * 1971-07-12 1974-05-28 Canon Kk Electrophotographic photosensitive member

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1378407A (fr) * 1962-12-07 1964-11-13 Rank Xerox Ltd Matière isolante photoconductrice améliorée

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3427157A (en) * 1964-12-28 1969-02-11 Xerox Corp Xerographic process utilizing a photoconductive alloy of thallium in selenium
US3350595A (en) * 1965-11-15 1967-10-31 Rca Corp Low dark current photoconductive device
US3501343A (en) * 1966-02-16 1970-03-17 Xerox Corp Light insensitive xerographic plate and method for making same
US3655377A (en) * 1966-10-03 1972-04-11 Xerox Corp Tri-layered selenium doped photoreceptor
US3574140A (en) * 1968-02-26 1971-04-06 Us Navy Epitaxial lead-containing photoconductive materials
US3647427A (en) * 1969-08-27 1972-03-07 Canon Kk Germanium and silicon additives to dual-layer electrophotographic plates
US3709683A (en) * 1970-12-18 1973-01-09 Xerox Corp Infrared sensitive image retention photoreceptor
US3712810A (en) * 1970-12-18 1973-01-23 Xerox Corp Ambipolar photoreceptor and method
US3813243A (en) * 1971-07-12 1974-05-28 Canon Kk Electrophotographic photosensitive member
US3794842A (en) * 1972-12-13 1974-02-26 Horizons Research Inc Generation of radiographs

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4021375A (en) * 1975-09-15 1977-05-03 Rca Corporation Method of fabricating polycrystalline selenium imaging devices
US4609605A (en) * 1985-03-04 1986-09-02 Xerox Corporation Multi-layered imaging member comprising selenium and tellurium
US5085959A (en) * 1988-08-11 1992-02-04 Fuji Electric Co., Ltd. Se or se alloy electrophotographic photoreceptor
US5436101A (en) * 1993-08-20 1995-07-25 Xerox Corporation Negative charging selenium photoreceptor

Also Published As

Publication number Publication date
NL7400954A (pt) 1974-08-06
DE2305407B2 (de) 1977-08-04
FR2216608A1 (pt) 1974-08-30
FR2216608B1 (pt) 1977-09-16
JPS5136944A (pt) 1976-03-29
DE2305407C3 (de) 1978-04-06
CH589873A5 (pt) 1977-07-15
DE2305407A1 (de) 1974-08-08
BR7400708D0 (pt) 1974-12-03
GB1456724A (en) 1976-11-24
ES422826A1 (es) 1977-05-16
JPS5218582B2 (pt) 1977-05-23

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AS Assignment

Owner name: ALCATEL N.V., DE LAIRESSESTRAAT 153, 1075 HK AMSTE

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:INTERNATIONAL STANDARD ELECTRIC CORPORATION, A CORP OF DE;REEL/FRAME:004718/0023

Effective date: 19870311