US2956218A - Selenium rectifier - Google Patents
Selenium rectifier Download PDFInfo
- Publication number
- US2956218A US2956218A US684487A US68448757A US2956218A US 2956218 A US2956218 A US 2956218A US 684487 A US684487 A US 684487A US 68448757 A US68448757 A US 68448757A US 2956218 A US2956218 A US 2956218A
- Authority
- US
- United States
- Prior art keywords
- selenium
- gallium
- layer
- halogen
- rectifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title claims description 71
- 229910052711 selenium Inorganic materials 0.000 title claims description 71
- 239000011669 selenium Substances 0.000 title claims description 71
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 39
- 229910052733 gallium Inorganic materials 0.000 claims description 39
- 229910052736 halogen Inorganic materials 0.000 claims description 13
- 150000002367 halogens Chemical class 0.000 claims description 13
- 239000000654 additive Substances 0.000 claims description 7
- 238000007792 addition Methods 0.000 description 7
- 239000000460 chlorine Substances 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002366 halogen compounds Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 150000003346 selenoethers Chemical class 0.000 description 2
- 229910052716 thallium Inorganic materials 0.000 description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 2
- 102100026466 POU domain, class 2, transcription factor 3 Human genes 0.000 description 1
- 101710084413 POU domain, class 2, transcription factor 3 Proteins 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 150000002259 gallium compounds Chemical class 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- QHASIAZYSXZCGO-UHFFFAOYSA-N selanylidenenickel Chemical compound [Se]=[Ni] QHASIAZYSXZCGO-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
Definitions
- This invention relates to selenium rectifiers having substantially improved electrical properties, and to a method of producing such rectifiers.
- Selenium rectifiers generally consist of a metallic base electrode, a selenium layer evaporated onto the base electrode, and a counter electrode deposited onto the selenium layer.
- the so-called barrier layer which substantially determines the electrical properties of the rectifier. It is known to apply intermediate layers of particular chemical compounds between the selenium and the base electrode, to reduce the transient or contact resistance therebetween. It is also known to treat the surface of the selenium with salts, solutions or liquids, prior to the deposition of the counter electrode, for improving the blocking or barrier properties.
- an object of the present invention is to reduce the forward resistance of the rectifier without deteriorating the other rectifier properties.
- this is accomplished by adding gallium to the selenium in addition to the conventional additions of halogen.
- gallium may be added in an amount up to 10 mg. percent, that is, l0 mg. of gallium to 100 g. of selenium.
- gallium is added in an amount up to 10 mg. percent, that is, l0 mg. of gallium to 100 g. of selenium.
- the contents of chlorine in the combination should be appropriately chosen to amount to about mg. percent.
- a further advantage is obtained when the gallium iS only added to one portion of the selenium layer.
- the selenium layer is compiled of several layers and the addition of gallium is preferably added to the seleniumlayer next to the base electrode.
- the selenium layer may consist of two layers, ⁇ the layer next to the base electrode containing, gallium, and the layer lyingA next to the counter electrode being free of gallium.
- a halogen preferably chlorine
- the galliumless selenium layers only contain the halogen additives.
- the concentration of the gallium in the selenium layer decreases from the base electrode towards the counter electrode. This, by way of example, can be accomplished in that the concentration of the gallium decreases steadily, or in that the gallium concentration of the individual gallium-containing layers decreases towards the counter electrode. In either case, however, it is important that the selenium layer adjacent the counter electrode contains as little as possible of the gallium.
- the introduction of the gallium into the selenium layer i is best provided by simultaneously evaporating gallium and selenium. These two substances should be evaporated in separate evaporators, in order to achieve the desired result.
- Metallic gallium or gallium compounds may be added to the selenium.
- a halogen compound of the gallium such as gallium chloride may be used.
- the contact resistance between the selenium and the base electrode may be reduced still further by applying the known intermediate layers between the base 'electrode and the selenium.
- This layer may be e.g. a bismuth layer evaporated onto the base electrode, or a layer of selenide which is produced e.g. on -a nickel-plated iron base plate by depositing a slight lamount of selenium and heating it to temperatures of about 300 C.
- the rectier plate consists of a metallic base plate 1, ofa
- selenium layer 2 which contains gallium and halogen
- the selenium rectifier plate consists of the base plate or electrode 1, of the galliurnand halogen-containing selenium layer 2a, of the halogencontaining selenium layer 2b, and of the counter elec- ⁇ trode 3.
- th'e selenium layer consists of three partial layers, of which the layer 2a contains galliurn and halogen, and of which the layers 2b contain halogen only.
- the embodiment yaccording to Fig. 4 resembles in principle the structure of the embodiment according to Fig. 3, with the exception that ⁇ an intermediate layer, e.g. of bismuth, is inserted between the base electrode 1V and the lowest selenium layer.
- ⁇ an intermediate layer e.g. of bismuth
- the rectiiier plate according to Fig. 5 consists of a metallic base electrode 1, eg. of iron, of an intermediate layer of metal e.g. of nickel 1b, ⁇ arnanged on said first layer, of a selenide layer 1c, e.g. of nickelselenide, of the halogen-containing selenium layer 2b, further of the halogenand gallium-containing selenium layer 2a, on which is arranged a halogen-containing selenium layer 2b.
- an artiiicial barrier layer 4 e.g. of a suitable lacquer.
- a selenium rectier comprising a base electrode, a selenium layer including additives and a counter electrode, characterized in that the additives are halogen and gallium.
- a selenium rectifier as claimed in claim l characterized in that the concentration of gallium decreases from the side of the base electrode towards the side of the counter electrode.
- a selenium rectifier as claimed in claim l characterized in that said selenium layer comprises two portions and that only one portion contains gallium.
- a selenium rectiiier according to claim l characterized in that said selenium layer contains up to approximately l5 mg. chlorine and up to approximately l0 mg. of gallium per v10() g. of selenium.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biotechnology (AREA)
- Physical Vapour Deposition (AREA)
- Photoreceptors In Electrophotography (AREA)
- Thermistors And Varistors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Laminated Bodies (AREA)
Description
Oct- 11, 1950 A. KLEINLE ETAL 2,956,218
SELENIUM RECTIEIEE Filed sept. 17, 1957 2,956,218 Patented oet. 11,1960
SELENIUM RECTIFIER Alois Kleinle, Numberg, and Rdolf Friedrich Weiss,
Roth, near Numberg, Germany, assignors to International Standard Electric Corporation, New York, N.Y., a corporation of Delaware Filed Sept. 17, 1957, Ser. No. 684,487 Y Claims priority, application Germany Oct. 5, 1956 6 Claims. (Cl. 3177-4241) This invention relates to selenium rectifiers having substantially improved electrical properties, and to a method of producing such rectifiers.
Selenium rectifiers generally consist of a metallic base electrode, a selenium layer evaporated onto the base electrode, and a counter electrode deposited onto the selenium layer. In the selenium layer, which is adjacent the counter electrode, there is formed the so-called barrier layer, which substantially determines the electrical properties of the rectifier. It is known to apply intermediate layers of particular chemical compounds between the selenium and the base electrode, to reduce the transient or contact resistance therebetween. It is also known to treat the surface of the selenium with salts, solutions or liquids, prior to the deposition of the counter electrode, for improving the blocking or barrier properties.
It is further known to add to the selenium, halogen and halogen compounds, to increase the electrical conductivity of the Selenium. Additives such as thallium may be added to the counter electrode metal, to provide a barrier layer having improved blocking ability.A It is yalso known to provide a thin layer of one of the metals thallium, indium or gallium, between the selenium and counter electrode to increase the lblocking ability of the rectifier plate.
In the conventional types of selenium rectifiers, however, the resistance of the selenium layer is a relatively high one which is undesirable. Of course, by means of the aforementioned additions to the selenium it is possible to slightly diminish the resistance, but it has been impossible to make the forward resistance of the rectiiier plate smaller than about 2.5 to 3.5 ohms/cm?.
Accordingly, an object of the present invention is to reduce the forward resistance of the rectifier without deteriorating the other rectifier properties.
According to the invention this is accomplished by adding gallium to the selenium in addition to the conventional additions of halogen.
By means of these additions there is obtained surprisingly, a substantial reduction of the selenium resistance. Consequently, the quality of the rectifier plates is improved greatly, without a deterioration of the blocking properties. Deterioration is usually the result when adding conductivity-increasing additives. In accordance with the invention the forward resistance of the selenium can be reduced to almost l ohm/cm?. This is particularly important when it is considered that most often a plurality of rectifier plates are arranged in series.
In order to reduce the resistance of the selenium, gallium may be added in an amount up to 10 mg. percent, that is, l0 mg. of gallium to 100 g. of selenium. Of a particular advantage is the combination of chlorine and gallium in the selenium. The contents of chlorine in the combination should be appropriately chosen to amount to about mg. percent.
A further advantage is obtained when the gallium iS only added to one portion of the selenium layer. The
selenium layer is compiled of several layers and the addition of gallium is preferably added to the seleniumlayer next to the base electrode. Thus, lfor instance, the selenium layer may consist of two layers,`the layer next to the base electrode containing, gallium, and the layer lyingA next to the counter electrode being free of gallium. In
addition to the gallium, a halogen, preferably chlorine, has to exist inthe selenium for achieving the desired effect. The galliumless selenium layers only contain the halogen additives. Y
In one theoretical work on the resistances of selenium, selenium containing an'addition of gallium has been examined. lIn this study, however, it has been found that only the resistance of the pure selenium had Ibeen affected. The study concluded that indium has the `same effect. Selenium layers, however, with a simultaneous addition of gallium and halogen have not yet been examined, and the result obtained in accordance with the invention is completely surprising in light of the examinations which of three layers, wherein the middle one contains gallium has certain advantages. In this case the selenium layer I, adjacent the base plate is free of gallium and is dimensioned to4 be thinner than the selenium layer adjacent the counter electrode which is also free of gallium. Outstanding results are obtainable when a selenium layer with a l5-20p. thickness is applied to the base electrode, and when on this layer there is arranged a selenium layer containing gallium with a thickness of about 10;; and on which there is again deposited a gallium free selenium layer with a thickness of 30-40/t.
The described Sequences of layers of gallium-free and gallium-containing selenium may also be repeated several times.
Further, it is of advantage when the concentration of the gallium in the selenium layer decreases from the base electrode towards the counter electrode. This, by way of example, can be accomplished in that the concentration of the gallium decreases steadily, or in that the gallium concentration of the individual gallium-containing layers decreases towards the counter electrode. In either case, however, it is important that the selenium layer adjacent the counter electrode contains as little as possible of the gallium.
The introduction of the gallium into the selenium layer i is best provided by simultaneously evaporating gallium and selenium. These two substances should be evaporated in separate evaporators, in order to achieve the desired result. Metallic gallium or gallium compounds may be added to the selenium. For example, a halogen compound of the gallium, such as gallium chloride may be used. By selectively regulating the heating of the evaporator for the gallium it is possible to produce the desired `distribution of the gallium in the selenium layer.
The contact resistance between the selenium and the base electrode may be reduced still further by applying the known intermediate layers between the base 'electrode and the selenium. This layer may be e.g. a bismuth layer evaporated onto the base electrode, or a layer of selenide which is produced e.g. on -a nickel-plated iron base plate by depositing a slight lamount of selenium and heating it to temperatures of about 300 C.
The construction of rectier plates according -to the invention will now be brieliy explained with reference to the accompanying drawing wherein the figures show several embodiments of selenium layer arrangement.
In the most simple case, as is illustrated in Fig. 1, the rectier plate consists of a metallic base plate 1, ofa
and of a metallic counter electrode 3. It is to be understood that the thicknesses of the layers, for reasons of clarity, are exaggerated and may not be taken as a scale for the true thickness ratio. The hatched layer indicates the gallium-containing selenium layer.
. According to Fig. 2, the selenium rectifier plate consists of the base plate or electrode 1, of the galliurnand halogen-containing selenium layer 2a, of the halogencontaining selenium layer 2b, and of the counter elec-` trode 3.
In the embodiment according to Fig. 3, th'e selenium layer consists of three partial layers, of which the layer 2a contains galliurn and halogen, and of which the layers 2b contain halogen only.
The embodiment yaccording to Fig. 4 resembles in principle the structure of the embodiment according to Fig. 3, with the exception that `an intermediate layer, e.g. of bismuth, is inserted between the base electrode 1V and the lowest selenium layer.
Finally, the rectiiier plate according to Fig. 5 consists of a metallic base electrode 1, eg. of iron, of an intermediate layer of metal e.g. of nickel 1b, `arnanged on said first layer, of a selenide layer 1c, e.g. of nickelselenide, of the halogen-containing selenium layer 2b, further of the halogenand gallium-containing selenium layer 2a, on which is arranged a halogen-containing selenium layer 2b. Between the counter electrode 3 and the uppermost selenium layer there is arranged an artiiicial barrier layer 4, e.g. of a suitable lacquer.
While we have described above the principles of our invention in connection with specific apparatus, it is to be clearly understood that this description is made only by way of example and not as a limitation to the scope of our invention as set forth in the objects thereof and in the accompanying claims.
What is claimed is:
11. A selenium rectier comprising a base electrode, a selenium layer including additives and a counter electrode, characterized in that the additives are halogen and gallium.
2. A selenium rectifier as claimed in claim l, characterized in that the concentration of gallium decreases from the side of the base electrode towards the side of the counter electrode.
3. A selenium rectifier as claimed in claim l, characterized in that said selenium layer comprises two portions and that only one portion contains gallium.
4. A selenium rectiier as claimed in claim 3, characterized in that a gallium-containing selenium layer is adjacent the base electrode.
5. A selenium rectifier as in claim 3, further characterized in that said one portion contains a maximum of l0 mg. of gallium per 100 g. of selenium.
6. A selenium rectiiier according to claim l, characterized in that said selenium layer contains up to approximately l5 mg. chlorine and up to approximately l0 mg. of gallium per v10() g. of selenium.
No references cited.
Claims (1)
1. A SELENIUM RECTIFIER COMPRISING A BASE ELECTRODE, A SELENIUM LAYER INCLUDING ADDITIVES AND A COUNTER ELECTRODE, CHARACTERIZED IN THAT THE ADDITIVES ARE HALOGEN AND GALLIUM.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US471900A US2724079A (en) | 1954-11-29 | 1954-11-29 | Artificial barrier layer selenium rectifier |
| DEST11766A DE1025527B (en) | 1954-11-29 | 1956-10-05 | Selenium rectifier with conductivity-increasing additives in the selenium layer |
| DEST11781A DE1181822B (en) | 1954-11-29 | 1956-10-11 | Process for the manufacture of selenium rectifiers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US2956218A true US2956218A (en) | 1960-10-11 |
Family
ID=27212391
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US471900A Expired - Lifetime US2724079A (en) | 1954-11-29 | 1954-11-29 | Artificial barrier layer selenium rectifier |
| US684487A Expired - Lifetime US2956218A (en) | 1954-11-29 | 1957-09-17 | Selenium rectifier |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US471900A Expired - Lifetime US2724079A (en) | 1954-11-29 | 1954-11-29 | Artificial barrier layer selenium rectifier |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US2724079A (en) |
| BE (3) | BE543179A (en) |
| CH (2) | CH346949A (en) |
| DE (2) | DE1025527B (en) |
| FR (1) | FR1139934A (en) |
| GB (2) | GB833894A (en) |
| NL (3) | NL221258A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3243293A (en) * | 1965-03-26 | 1966-03-29 | Xerox Corp | Plate for electrostatic electro-photography |
| US3935582A (en) * | 1973-06-19 | 1976-01-27 | International Standard Electric Corporation | Selenium rectifier |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1963738A1 (en) * | 1969-12-19 | 1971-06-24 | Semikron Gleichrichterbau | Method of manufacturing selenium rectifier plates |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE414231A (en) * | 1930-05-15 | |||
| BE473354A (en) * | 1946-05-21 | |||
| DE820318C (en) * | 1948-10-02 | 1951-11-08 | Siemens & Halske A G | Selenium bodies, especially for dry rectifiers, photo elements and light-sensitive resistance cells |
| US2659846A (en) * | 1951-05-15 | 1953-11-17 | Int Rectifier Corp | Selenium element and method of making it |
| US2758265A (en) * | 1951-08-29 | 1956-08-07 | Itt | Selenium rectifiers |
| BE515174A (en) * | 1951-10-29 |
-
0
- NL NL106216D patent/NL106216C/xx active
- BE BE561533D patent/BE561533A/xx unknown
- NL NL221515D patent/NL221515A/xx unknown
- NL NL221258D patent/NL221258A/xx unknown
- BE BE561366D patent/BE561366A/xx unknown
- BE BE543179D patent/BE543179A/xx unknown
-
1954
- 1954-11-29 US US471900A patent/US2724079A/en not_active Expired - Lifetime
-
1955
- 1955-11-23 CH CH346949D patent/CH346949A/en unknown
- 1955-11-29 FR FR1139934D patent/FR1139934A/en not_active Expired
-
1956
- 1956-10-05 DE DEST11766A patent/DE1025527B/en active Pending
- 1956-10-11 DE DEST11781A patent/DE1181822B/en active Pending
-
1957
- 1957-09-17 US US684487A patent/US2956218A/en not_active Expired - Lifetime
- 1957-10-03 CH CH360131D patent/CH360131A/en unknown
- 1957-10-04 GB GB31164/57A patent/GB833894A/en not_active Expired
- 1957-10-04 GB GB31163/57A patent/GB831458A/en not_active Expired
Non-Patent Citations (1)
| Title |
|---|
| None * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3243293A (en) * | 1965-03-26 | 1966-03-29 | Xerox Corp | Plate for electrostatic electro-photography |
| US3935582A (en) * | 1973-06-19 | 1976-01-27 | International Standard Electric Corporation | Selenium rectifier |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1025527B (en) | 1958-03-06 |
| NL221515A (en) | |
| US2724079A (en) | 1955-11-15 |
| GB833894A (en) | 1960-05-04 |
| CH346949A (en) | 1960-06-15 |
| BE561533A (en) | |
| CH360131A (en) | 1962-02-15 |
| BE561366A (en) | |
| BE543179A (en) | |
| NL221258A (en) | |
| GB831458A (en) | 1960-03-30 |
| FR1139934A (en) | 1957-07-08 |
| DE1181822B (en) | 1964-11-19 |
| NL106216C (en) |
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