US3890250A - Hot pressed silicon nitride containing finely dispersed silicon carbide or silicon aluminum oxynitride - Google Patents
Hot pressed silicon nitride containing finely dispersed silicon carbide or silicon aluminum oxynitride Download PDFInfo
- Publication number
- US3890250A US3890250A US392094A US39209473A US3890250A US 3890250 A US3890250 A US 3890250A US 392094 A US392094 A US 392094A US 39209473 A US39209473 A US 39209473A US 3890250 A US3890250 A US 3890250A
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- Prior art keywords
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- silicon carbide
- silicon
- silicon nitride
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- Expired - Lifetime
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/597—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon oxynitride, e.g. SIALONS
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
- C04B35/593—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by pressure sintering
Definitions
- ABSTRACT A hot-prcssed silicon nitride product containing a finely dispersed silicon carbide mixture is described.
- the product has very high strength at room temperature as well as high strength at elevated temperature. It has a high density and its electrical conductivity can be controlled over several orders of magnitude. 1n preferred forms the electrical resistivity is on the order of 2-l0 ohm centimeters and, accordingly, the product can be machined by electric discharge machining. Where high strength is desired the product can be made to have a transverse rupture strength in excess of 100,000 p.s.i.
- the transverse rupture strength can be in excess of 40,000 p.s.i., as measured by a three point test.
- This high strength product is formed predominantly of an essentially continuous matrix of silicon nitride which, under a scanning electron microscope, appears to have an average crystal size less than 1 micron.
- Particles of very fine silicon carbide also form a Continuous electrical path due to points of contact between individual particles.
- the silicon carbide particles are preferably all less than about 3 microns in diameter with the average diameter of the silicon carbide particles being less than about 1 micron.
- silicon nitride can be replaced by silicon aluminum oxynitride having the beta silicon nitride structure.
- the present invention is directed, in a preferred form, to high strength silicon nitride products which have a controlled low electrical resistivity along with their high strength.
- An improved hot-pressed silicon nitride is described in copending application Ser. No. 318,474 filed Dec. 26, 1972, in the names of Richerson and Washburn, that application being assigned to Norton Company, assignee of the present application.
- the present invention goes beyond the results achieved by the teachings of the above-identified Richerson and Washburn application in several important respects. In the first place the product has an enormously lower resistivity than the hot-pressed silicon nitride of Richerson and Washburn. Secondly, the transverse rupture strength of the product of the present invention, as measured on the four point test, can be made consistently over 100,000 p.s.i.
- FIGS. 13 show respectively the microstructure of the 90-10, -25, and 65-35 compositions (being various mixtures of Si N and SiC having the indicated weight ratios of Si N .to SiC). These micrographs were made at 1000 magnification in reflected light. Each micrograph contains a scale whose smallest division is 2.85 microns. The silicon nitride appears gray and the silicon carbide appears white in the micrographs.
- FIG. 4 is a scanning electron micrograph of a fracture surface of the 65-35 composition at 2000X magnification. Si N cannot be distinguished visually from SiC, but the average grain size is obviously under 1 micron.
- FIGS. 1-3 A comparison of FIGS. 1-3 is most valuable in explaining the electrical properties of the compositions.
- the Si N matrix predominates with each SiC particle being completely surrounded by insulative Si N
- a conductive path does not exist, so that the resistivity should be high.
- the Si N matrix predominates, but the SiC particles are much closer together with many actually in contact. The probability ofa limited number of conductive paths is much higher and the resistivity of the bulk material should be lower.
- the Si -,N still appears to be the matrix phase, but the SiC also appears to be a continuous interconnected phase. Conductive paths should be common, resulting in a low resistivity.
- Table I summarizes the electrical and mechanical properties of a range of compositions from pure silicon nitride to 60% Si N 40% SiC. The measured resistivities compare very well with results predicted from examination of the microstructure.
- the electrical properties of the products prepared in ph a m gic accordance with Example I were compared with sev- B 14M eral other products made in a similar fashion.
- the re- 1 f h 1 1' d T b Impurities (WL 2 su ts 0 tests on t ese materra s are rste in a le [1. llg
- the range of products having between 20 and 40 perg I] cent by weight of silicon carbide have very interesting Al .1 .3 .l .3 electrical characteristics.
- silicon nitride in the hot-pressed product can be replaced either wholly or partially by silicon aluminum oxynitride.
- silicon aluminum oxynitride is intended to include materials which contain silicon aluminum oxygen and nitrogen either as: (a) a solid solution of alumina or aluminum in silicon nitride or silicon oxynitride or (b) as a substitution compound wherein aluminum and/or oxygen have replaced silicon and/or nitrogen in the basic silicon nitride crystal structure.
- the silicon aluminum oxynitride structure is very similar to the beta silicon nitride structure although its lattice parameters are slightly expanded, the degree of expansion depending upon the percent of aluminum in the structure.
- silicon aluminum oxynitride There are several ways of making silicon aluminum oxynitride. One is that described by Jack and Wilson in Nature Physical Science, Vol. 238, July 10, 1972 pages 28 and 29. In the Jack and Wilson procedure alumina is reacted with silicon nitride to form the silicon aluminum oxynitride. Jack and Wilson postulate a formula of Si ,Al N ,O
- Another method of making silicon aluminum oxynitride involves the reaction of aluminum with silicon oxynitride to form a compound which is postulated to have the formula Sig.
- the product containing the silicon aluminum oxynitride is preferred in those cases where the optimum oxidation resistance along with high temperature strength is required.
- the silicon aluminum oxynitride-silicon carbide mixture also has the advantage that it can be produced by sintering without the necessity of hot pressing although work to date does not indicate that the ultimate room temperature strength can be achieved by mere sintering.
- One preferred method of forming the product containing the silicon aluminum oxynitride (using the Jack and Wilson procedure) is shown in the following example.
- EXAMPLE II 105 grams of silicon nitride of the type used in Example I were mixed with l05 grams of G55 alumina along the 90 grams of fine silicon carbide having the properties of the SiC of Example I.
- the GSS alumina is a high purity alumina having a five micron particle size.
- the above components were mixed with 400 ml. isopropyl alcohol and milled for 20 hours in a 0.3 gallon tungsten carbide lined ball mill with tungsten carbide balls.
- the resulting slurry was screened through a 325 mesh screen and dried.
- 150 grams of dried powder were loaded into a 3 inch diameter graphite mold and hot-pressed at 1750C under 3000 p.s.i. for 30 minutes.
- the resulting sample had a bulk density of 3.1 1 grams per cubic centimeter.
- Samples /s X A X 2-3 inches were prepared by diamond cutting and grinding for property measurements.
- the material had an electrical resistivity of approximately 7 ohm centimeters and an average modulus of rupture, as measured on a three point test, at room temperature of 70,800 p.s.i.
- the resistivity of this product is similar to a comparable product having a /30 silicon nitride to silicon carbide ratio listed in Table I above. While high temperature modulus of rupture tests were not made on these Example II samples it is believed that they would equal or exceed the test data listed in Table I.
- silicon aluminum oxynitride can be used throughout the whole range of product compositions described above for silicon nitride.
- the silicon nitride will be stronger, particularly at room temperature, than the silicon aluminum oxynitride. However the latter may have advantages with respect to high temperature strength and oxidation resistance.
- the silicon aluminum oxynitride will have outstanding thermal shock resistance and low thermal expansion. Also it may have advantages in certain cases where sintering of preformed bodies is necessary because hot pressing is difficult or impossible to use.
- the amount of silicon carbide is increased above 50%, and may be as high as 60%.
- the room temperature modulus of rupture 3 point test
- the silicon carbide is increased to 60% of the product the resistivity drops to 0.15 ohm centimeters and the modulus of rupture, under the three point test, at room temperature is down to 25,900 p.s.i.
- this strength may be more than adequate.
- Monolithic, high density silicon nitride product whose silicon nitride is predominantly beta phase, the product containing between 10 and 50 percent silicon carbide, the product having interengaged matrices of silicon nitride and silicon carbide, the product being characterized by a modulus of rupture, in excess of 100,000 p.s.i. at 20C as measured by four point flexure testing, and in excess of 40,000 p.s.i. at l375C as measured by three point testing, the product having an electrical resistivity between 1 and 1 10 ohm centimeters.
- Monolithic, high density silicon nitride product whose silicon nitride is predominantly beta phase, the product containing between 20 and 50 percent silicon carbide, the product, when examined by an optical microscope at l000 magnification demonstrating a substantially continuous silicon nitride matrix and an interengaged silicon carbide matrix forming a substantially continuous electrical path between adjacent silicon carbide particles, the product being characterized by a modulus of rupture, in excess of 100,000 p.s.i. at 20C as measured by four point testing, and in excess of 40,000 p.s.i. at l375C as measured by three point testing, the product having an electrical resistivity between 1 and 1x10 ohm centimeters.
- Monolithic, high density silicon nitride product whose silicon nitride is predominantly beta phase, the product containing between 20 and 50 percent silicon carbide, the product, when examined by an optical microscope at 1000 magnification demonstrating a substantially continuous silicon nitride matrix and an interengaged silicon carbide matrix forming a substantially continuous electrical path between adjacent silicon carbide particles, essentially all of the silicon carbide particles have a diameter less than about 3 microns and an average diameter less than 1 micron, the product being characterized by a modulus of rupture, in excess of 100,000 p.s.i. at 20C as measured by four point testing, and in excess of 40,000 p.s.i. at 1375C, the product having an electrical resistivity between 1 and l l ohm centimeters.
- Monolithic, high density silicon nitride product whose silicon nitride is predominantly beta phase, the product containing between 20 and 50 percent silicon carbide, the product having interengaged matrices of silicon nitride and silicon carbide, the product being characterized by a modulus of rupture, in excess of 100,000 p.s.i. at 20C as measured by four point testing and in excess of 40,000 p.s.i. at 1375C as measured by three point testing, the product having a resistivity which ranges between 1 and 150 ohm centimeters at room temperature and 0.3 to 50 ohm centimeters at 1000C.
- Monolithic, high density product comprising a mixture of silicon carbide and at least one compound containing silicon and nitrogen and having the beta silicon nitride structure, said compound being selected from the group consisting of beta silicon nitride and silicon aluminum oxynitride having an expanded beta sili con nitride structure, the product containing between 10 and 50 percent silicon carbide, the product having interengaged matrices of silicon carbide and said compound the product being characterized by a modulus of rupture in excess of 70,000 p.s.i.
- the silicon carbide particles having an average size of 1 micron or less as indicated on photomicrograph at l000 magnification, the product having an electrical resistivity between 1 and l l0 ohm centimeters.
- Monolithic, high density silicon nitride product whose silicon nitride is predominantly beta phase, the product containing between 50 and 60 percent silicon carbide, the product, when examined by an optical microscope at 1000 magnification demonstrating a substantially continuous silicon nitride matrix and an interengaged silicon carbide matrix forming a substantially continuous electrical path between adjacent silicon carbide particles, the product being characterized by a modulus of rupture, in excess of 25,000 p.s.i. at 20C as measured by three point testing, the product having an electrical resistivity of between 0.1 and 1.0 ohm centimeters.
- Monolithic, high density product containing silicon aluminum oxynitride having an expanded beta phase silicon nitride structure the product containing between 50 and 60 percent silicon carbide, the product, when examined by an optical microscope at l000 magnification demonstrating a substantially continuous silicon aluminum oxynitride matrix and an interengaged silicon carbide matrix forming a substantially continuous electrical path between adjacent silicon carbide particles, essentially all of the silicon carbide particles have a diameter less than about 3 microns and an average diameter less than 1 micron, the product being characterized by a modulus of rupture, in excess of 25,000 p.s.i. at 20C as measured by four point testing, the product having an electrical resistivity of less than 1 ohm centimeters.
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- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
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- Structural Engineering (AREA)
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- Ceramic Products (AREA)
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Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US392094A US3890250A (en) | 1973-03-14 | 1973-08-27 | Hot pressed silicon nitride containing finely dispersed silicon carbide or silicon aluminum oxynitride |
CA194,603A CA1020961A (en) | 1973-03-14 | 1974-03-11 | Hot pressed silicon nitride containing finely dispersed silicon carbide |
SE7403328A SE403627B (sv) | 1973-03-14 | 1974-03-13 | Monolitisk kiselnitridprodukt innehallande tindispergerad kiselkarbid |
FR7408463A FR2221527B1 (it) | 1973-03-14 | 1974-03-13 | |
IT67749/74A IT1020544B (it) | 1973-03-14 | 1974-03-13 | Prodotto sinterizzato a base di nitruro di silicio |
GB1115174A GB1462640A (en) | 1973-03-14 | 1974-03-13 | Hot pressed silicon nitride containing finely dispersed silicon carbide |
JP49029566A JPS5025609A (it) | 1973-03-14 | 1974-03-14 | |
DE2412339A DE2412339C2 (de) | 1973-03-14 | 1974-03-14 | Monolithische hochdichte Körper aus Siliciumnitrid und Siliciumcarbid |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US34094873A | 1973-03-14 | 1973-03-14 | |
US392094A US3890250A (en) | 1973-03-14 | 1973-08-27 | Hot pressed silicon nitride containing finely dispersed silicon carbide or silicon aluminum oxynitride |
Publications (1)
Publication Number | Publication Date |
---|---|
US3890250A true US3890250A (en) | 1975-06-17 |
Family
ID=26992307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US392094A Expired - Lifetime US3890250A (en) | 1973-03-14 | 1973-08-27 | Hot pressed silicon nitride containing finely dispersed silicon carbide or silicon aluminum oxynitride |
Country Status (8)
Country | Link |
---|---|
US (1) | US3890250A (it) |
JP (1) | JPS5025609A (it) |
CA (1) | CA1020961A (it) |
DE (1) | DE2412339C2 (it) |
FR (1) | FR2221527B1 (it) |
GB (1) | GB1462640A (it) |
IT (1) | IT1020544B (it) |
SE (1) | SE403627B (it) |
Cited By (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3974106A (en) * | 1974-05-22 | 1976-08-10 | Norton Company | Ceramic electrical resistance igniter |
US4113503A (en) * | 1976-06-03 | 1978-09-12 | Lucas Industries Limited | Method of forming a ceramic product |
US4141740A (en) * | 1978-02-23 | 1979-02-27 | University Of Utah | Solid solution and process for producing a solid solution |
US4528120A (en) * | 1983-07-14 | 1985-07-09 | Elektroschmelzwerk Kempten Gmbh | Refractory, electrically conductive, mixed materials containing boron nitride and process for their manufacture |
US4529532A (en) * | 1983-02-17 | 1985-07-16 | Degussa Aktiengesellschaft | Process for the production of binder-free press-molded heat-insulating parts |
US4560668A (en) * | 1981-10-23 | 1985-12-24 | Elektroschmelzwerk Kempten Gmbh | Substantially pore-free shaped articles of polycrystalline silicon carbide, and a process for their manufacture by isostatic hot-pressing |
WO1987001693A1 (en) * | 1985-09-20 | 1987-03-26 | Ceramatec, Inc. | Dense ceramics containing a solid solution and method for making the same |
US4659508A (en) * | 1984-11-05 | 1987-04-21 | Sumitomo Electric Industries, Ltd. | Electrically-conductive sintered compact of silicon nitride machinable by electrical discharge machining and process of producing the same |
EP0276334A1 (en) * | 1987-01-22 | 1988-08-03 | Mitsubishi Gas Chemical Company, Inc. | Silicon nitride-silicon carbide composite material and process for production thereof |
WO1988009313A1 (en) | 1987-05-29 | 1988-12-01 | Kennametal Inc. | Silicon carbide-alpha prime sialon |
EP0322745A1 (en) * | 1987-12-24 | 1989-07-05 | Hitachi Metals, Ltd. | Conductive ceramic sintered body |
US4946807A (en) * | 1986-08-18 | 1990-08-07 | Ngk Spark Plug Co., Ltd. | Composite ceramic material reinforced with silicon carbide whiskers |
GB2237292A (en) * | 1989-10-25 | 1991-05-01 | Secr Defence | Ion drift tubes |
US5045237A (en) * | 1984-11-08 | 1991-09-03 | Norton Company | Refractory electrical device |
US5053363A (en) * | 1988-09-02 | 1991-10-01 | Sandvik Ab | Ceramic cutting material reinforced by whiskers |
US5085804A (en) * | 1984-11-08 | 1992-02-04 | Norton Company | Refractory electrical device |
US5162273A (en) * | 1986-05-08 | 1992-11-10 | Lanxide Technology Company, Lp | Shaped ceramic composites and methods of making the same |
US5187130A (en) * | 1985-02-04 | 1993-02-16 | Lanxide Technology Company, Lp | Composite ceramic articles |
US5217932A (en) * | 1989-09-18 | 1993-06-08 | The Tokyo Electric Power Co., Ltd. | Sintered ceramic composite body and method of manufacturing same |
US5312788A (en) * | 1991-06-17 | 1994-05-17 | Alliedsignal Inc. | High toughness, high strength sintered silicon nitride |
US5334562A (en) * | 1985-02-04 | 1994-08-02 | Lanxide Technology Company, Lp | Composite ceramic articles |
US5366941A (en) * | 1991-10-30 | 1994-11-22 | Ngk Insulators, Ltd. | Composite ceramics and their production process |
US5494866A (en) * | 1991-06-17 | 1996-02-27 | Alliedsignal Inc. | Stress-rupture resistant sintered silicon nitride |
US5521129A (en) * | 1994-09-14 | 1996-05-28 | The Carborundum Company | Sialon-bonded silicon carbide refractory |
US5523267A (en) * | 1990-12-27 | 1996-06-04 | Kyocera Corporation | Silicon nitride-silicon carbide composite sintered material and manufacturing thereof |
US5637540A (en) * | 1991-06-17 | 1997-06-10 | Alliedsignal Inc. | Sintered silicon nitride of high toughness, strength and reliability |
US6156238A (en) * | 1997-02-10 | 2000-12-05 | Bayer Ag | Liquid phase-sintered, electrically conductive and oxidation-resistant ceramic material, a process for producing it and its use |
US6328913B1 (en) | 1998-09-02 | 2001-12-11 | Peter T. B. Shaffer | Composite monolithic elements and methods for making such elements |
US20040021548A1 (en) * | 2000-01-25 | 2004-02-05 | Albrecht Geissinger | Passive, high-temperature-resistant resistor element for measuring temperature in passenger and commercial vehicles |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4127416A (en) * | 1976-07-24 | 1978-11-28 | Lucas Industries Limited | Method of producing a ceramic product |
US4243623A (en) * | 1978-01-19 | 1981-01-06 | Westinghouse Electric Corp. | Method of encapsulating electrical apparatus |
JPS59102861A (ja) * | 1982-12-03 | 1984-06-14 | 工業技術院長 | 炭化ケイ素複合酸化物焼結セラミクス |
JPS59102862A (ja) * | 1982-12-03 | 1984-06-14 | 工業技術院長 | 複合焼結セラミクス |
JPS61158867A (ja) * | 1984-12-28 | 1986-07-18 | 工業技術院長 | 窒化ケイ素系焼結体の強化方法 |
JP2566580B2 (ja) * | 1987-07-01 | 1996-12-25 | 日産自動車株式会社 | 炭化珪素・窒化珪素質複合焼結体 |
US6391812B1 (en) * | 1999-06-23 | 2002-05-21 | Ngk Insulators, Ltd. | Silicon nitride sintered body and method of producing the same |
JP4828685B2 (ja) * | 2000-07-12 | 2011-11-30 | 株式会社東芝 | 窒化珪素焼結体およびそれを用いた摺動部材並びにベアリングボール |
Citations (5)
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US2750268A (en) * | 1952-05-01 | 1956-06-12 | Union Carbide & Carbon Corp | Silicon nitride |
US2968530A (en) * | 1957-03-20 | 1961-01-17 | Union Carbide Corp | Silicon-oxygen-nitrogen composition of matter |
US3211527A (en) * | 1962-05-28 | 1965-10-12 | Union Carbide Corp | Process for producing ultrafine silicon nitride |
US3356513A (en) * | 1966-12-20 | 1967-12-05 | Norton Co | Production of silicon oxynitride |
US3468992A (en) * | 1965-04-22 | 1969-09-23 | Montedison Spa | Process for preparing manufactured articles of silicon nitride,also in admixture with silicon carbide |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US866444A (en) * | 1905-12-02 | 1907-09-17 | Siemens & Co Geb | Process for the manufacture of solid forms. |
US3052814A (en) * | 1959-03-23 | 1962-09-04 | Gen Motors Corp | Method for making silicon nitride-bonded silicon carbide semiconductors and resulting bodies and articles using same |
JPS4981416A (it) * | 1972-12-08 | 1974-08-06 |
-
1973
- 1973-08-27 US US392094A patent/US3890250A/en not_active Expired - Lifetime
-
1974
- 1974-03-11 CA CA194,603A patent/CA1020961A/en not_active Expired
- 1974-03-13 GB GB1115174A patent/GB1462640A/en not_active Expired
- 1974-03-13 IT IT67749/74A patent/IT1020544B/it active
- 1974-03-13 SE SE7403328A patent/SE403627B/xx unknown
- 1974-03-13 FR FR7408463A patent/FR2221527B1/fr not_active Expired
- 1974-03-14 JP JP49029566A patent/JPS5025609A/ja active Pending
- 1974-03-14 DE DE2412339A patent/DE2412339C2/de not_active Expired
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2750268A (en) * | 1952-05-01 | 1956-06-12 | Union Carbide & Carbon Corp | Silicon nitride |
US2968530A (en) * | 1957-03-20 | 1961-01-17 | Union Carbide Corp | Silicon-oxygen-nitrogen composition of matter |
US3211527A (en) * | 1962-05-28 | 1965-10-12 | Union Carbide Corp | Process for producing ultrafine silicon nitride |
US3468992A (en) * | 1965-04-22 | 1969-09-23 | Montedison Spa | Process for preparing manufactured articles of silicon nitride,also in admixture with silicon carbide |
US3356513A (en) * | 1966-12-20 | 1967-12-05 | Norton Co | Production of silicon oxynitride |
Cited By (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3974106A (en) * | 1974-05-22 | 1976-08-10 | Norton Company | Ceramic electrical resistance igniter |
US4113503A (en) * | 1976-06-03 | 1978-09-12 | Lucas Industries Limited | Method of forming a ceramic product |
US4141740A (en) * | 1978-02-23 | 1979-02-27 | University Of Utah | Solid solution and process for producing a solid solution |
US4560668A (en) * | 1981-10-23 | 1985-12-24 | Elektroschmelzwerk Kempten Gmbh | Substantially pore-free shaped articles of polycrystalline silicon carbide, and a process for their manufacture by isostatic hot-pressing |
US4529532A (en) * | 1983-02-17 | 1985-07-16 | Degussa Aktiengesellschaft | Process for the production of binder-free press-molded heat-insulating parts |
US4528120A (en) * | 1983-07-14 | 1985-07-09 | Elektroschmelzwerk Kempten Gmbh | Refractory, electrically conductive, mixed materials containing boron nitride and process for their manufacture |
US4659508A (en) * | 1984-11-05 | 1987-04-21 | Sumitomo Electric Industries, Ltd. | Electrically-conductive sintered compact of silicon nitride machinable by electrical discharge machining and process of producing the same |
US5045237A (en) * | 1984-11-08 | 1991-09-03 | Norton Company | Refractory electrical device |
US5085804A (en) * | 1984-11-08 | 1992-02-04 | Norton Company | Refractory electrical device |
US5187130A (en) * | 1985-02-04 | 1993-02-16 | Lanxide Technology Company, Lp | Composite ceramic articles |
US5334562A (en) * | 1985-02-04 | 1994-08-02 | Lanxide Technology Company, Lp | Composite ceramic articles |
WO1987001693A1 (en) * | 1985-09-20 | 1987-03-26 | Ceramatec, Inc. | Dense ceramics containing a solid solution and method for making the same |
US5162273A (en) * | 1986-05-08 | 1992-11-10 | Lanxide Technology Company, Lp | Shaped ceramic composites and methods of making the same |
US5358914A (en) * | 1986-05-08 | 1994-10-25 | Lanxide Technology Company, Lp | Methods of making shaped ceramic composites |
US4946807A (en) * | 1986-08-18 | 1990-08-07 | Ngk Spark Plug Co., Ltd. | Composite ceramic material reinforced with silicon carbide whiskers |
EP0276334A1 (en) * | 1987-01-22 | 1988-08-03 | Mitsubishi Gas Chemical Company, Inc. | Silicon nitride-silicon carbide composite material and process for production thereof |
US4800182A (en) * | 1987-01-22 | 1989-01-24 | Mitsubishi Gas Chemical Company, Inc. | Silicon nitride-silicon carbide composite material and process for production thereof |
WO1988009313A1 (en) | 1987-05-29 | 1988-12-01 | Kennametal Inc. | Silicon carbide-alpha prime sialon |
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US6156238A (en) * | 1997-02-10 | 2000-12-05 | Bayer Ag | Liquid phase-sintered, electrically conductive and oxidation-resistant ceramic material, a process for producing it and its use |
US6328913B1 (en) | 1998-09-02 | 2001-12-11 | Peter T. B. Shaffer | Composite monolithic elements and methods for making such elements |
US20040021548A1 (en) * | 2000-01-25 | 2004-02-05 | Albrecht Geissinger | Passive, high-temperature-resistant resistor element for measuring temperature in passenger and commercial vehicles |
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Also Published As
Publication number | Publication date |
---|---|
GB1462640A (en) | 1977-01-26 |
IT1020544B (it) | 1977-12-30 |
JPS5025609A (it) | 1975-03-18 |
DE2412339C2 (de) | 1986-02-06 |
CA1020961A (en) | 1977-11-15 |
FR2221527A1 (it) | 1974-10-11 |
SE403627B (sv) | 1978-08-28 |
FR2221527B1 (it) | 1982-07-02 |
DE2412339A1 (de) | 1974-09-19 |
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