US3818413A - Film resistor and method of making - Google Patents
Film resistor and method of making Download PDFInfo
- Publication number
- US3818413A US3818413A US00285933A US28593372A US3818413A US 3818413 A US3818413 A US 3818413A US 00285933 A US00285933 A US 00285933A US 28593372 A US28593372 A US 28593372A US 3818413 A US3818413 A US 3818413A
- Authority
- US
- United States
- Prior art keywords
- islands
- supporting base
- areas
- layer
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000002245 particle Substances 0.000 claims description 41
- 239000010410 layer Substances 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 38
- 150000002500 ions Chemical class 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000002344 surface layer Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 2
- 230000032683 aging Effects 0.000 abstract description 5
- 239000004020 conductor Substances 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 description 12
- 230000005855 radiation Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- LSIXBBPOJBJQHN-UHFFFAOYSA-N 2,3-Dimethylbicyclo[2.2.1]hept-2-ene Chemical compound C1CC2C(C)=C(C)C1C2 LSIXBBPOJBJQHN-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003679 aging effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- -1 chrominum Chemical compound 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/24—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
- H01C17/2404—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material by charged particle impact, e.g. by electron or ion beam milling, sputtering, plasma etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49099—Coating resistive material on a base
Definitions
- the apparatus for use in practicing the method of the invention may be the device described in Zeitschrift Fur Angewandte Physik, Vol. 31 (1971), Pages 51 and following.
- An electrical resistor according to claim 5 wherein the surface of said areas is essentially free from individual particles of the material or materials, or malands have dimensions in the order of one nanometer.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Thermistors And Varistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19712146662 DE2146662C3 (de) | 1971-09-17 | Verfahren zur Herstellung einer elektrisch leitfähigen Schicht |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US3818413A true US3818413A (en) | 1974-06-18 |
Family
ID=5819937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US00285933A Expired - Lifetime US3818413A (en) | 1971-09-17 | 1972-09-01 | Film resistor and method of making |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US3818413A (en:Method) |
| JP (1) | JPS4839180A (en:Method) |
| AT (1) | AT321411B (en:Method) |
| BE (1) | BE788894A (en:Method) |
| CA (1) | CA968864A (en:Method) |
| CH (1) | CH566063A5 (en:Method) |
| FR (1) | FR2152942B1 (en:Method) |
| GB (1) | GB1387166A (en:Method) |
| IT (1) | IT967539B (en:Method) |
| LU (1) | LU66097A1 (en:Method) |
| NL (1) | NL7212362A (en:Method) |
| SE (1) | SE381530B (en:Method) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3898607A (en) * | 1974-02-28 | 1975-08-05 | Motorola Inc | High value vertical resistors by ion implantation and method for making same |
| US4318072A (en) * | 1979-09-04 | 1982-03-02 | Vishay Intertechnology, Inc. | Precision resistor with improved temperature characteristics |
| US4466839A (en) * | 1981-09-30 | 1984-08-21 | Siemens Aktiengesellschaft | Implantation of an insulative layer |
| US6373118B1 (en) * | 1999-08-11 | 2002-04-16 | Lewyn Consulting, Inc. | High-value integrated circuit resistor |
| CN110824137A (zh) * | 2019-10-10 | 2020-02-21 | 中国建筑材料科学研究总院有限公司 | 低辐射玻璃中银膜在衬底上结晶有序性的预测方法及装置 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59162580A (ja) * | 1983-03-08 | 1984-09-13 | Fuji Photo Film Co Ltd | 電子写真装置用プロセスヘツド |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2999339A (en) * | 1956-12-07 | 1961-09-12 | Bansch & Lomb Inc | Method of providing an electrically conductive surface |
| US3287161A (en) * | 1962-10-01 | 1966-11-22 | Xerox Corp | Method for forming a thin film resistor |
| US3380156A (en) * | 1965-11-15 | 1968-04-30 | Trw Inc | Method of fabricating thin film resistors |
| US3562022A (en) * | 1967-12-26 | 1971-02-09 | Hughes Aircraft Co | Method of doping semiconductor bodies by indirection implantation |
| US3585088A (en) * | 1968-10-18 | 1971-06-15 | Ibm | Methods of producing single crystals on supporting substrates |
-
0
- BE BE788894D patent/BE788894A/xx unknown
-
1972
- 1972-08-10 CH CH1181272A patent/CH566063A5/xx not_active IP Right Cessation
- 1972-08-10 AT AT693072A patent/AT321411B/de not_active IP Right Cessation
- 1972-09-01 US US00285933A patent/US3818413A/en not_active Expired - Lifetime
- 1972-09-12 NL NL7212362A patent/NL7212362A/xx not_active Application Discontinuation
- 1972-09-14 FR FR7232531A patent/FR2152942B1/fr not_active Expired
- 1972-09-14 JP JP47092747A patent/JPS4839180A/ja active Pending
- 1972-09-15 SE SE7211940A patent/SE381530B/xx unknown
- 1972-09-15 LU LU66097A patent/LU66097A1/xx unknown
- 1972-09-15 CA CA151,799A patent/CA968864A/en not_active Expired
- 1972-09-15 GB GB4281072A patent/GB1387166A/en not_active Expired
- 1972-09-15 IT IT29257/72A patent/IT967539B/it active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2999339A (en) * | 1956-12-07 | 1961-09-12 | Bansch & Lomb Inc | Method of providing an electrically conductive surface |
| US3287161A (en) * | 1962-10-01 | 1966-11-22 | Xerox Corp | Method for forming a thin film resistor |
| US3380156A (en) * | 1965-11-15 | 1968-04-30 | Trw Inc | Method of fabricating thin film resistors |
| US3562022A (en) * | 1967-12-26 | 1971-02-09 | Hughes Aircraft Co | Method of doping semiconductor bodies by indirection implantation |
| US3585088A (en) * | 1968-10-18 | 1971-06-15 | Ibm | Methods of producing single crystals on supporting substrates |
Non-Patent Citations (1)
| Title |
|---|
| Krimmel, Properties of Selfionirradiated Thin Films, pp. 141 150; 7 71. * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3898607A (en) * | 1974-02-28 | 1975-08-05 | Motorola Inc | High value vertical resistors by ion implantation and method for making same |
| US4318072A (en) * | 1979-09-04 | 1982-03-02 | Vishay Intertechnology, Inc. | Precision resistor with improved temperature characteristics |
| US4466839A (en) * | 1981-09-30 | 1984-08-21 | Siemens Aktiengesellschaft | Implantation of an insulative layer |
| US6373118B1 (en) * | 1999-08-11 | 2002-04-16 | Lewyn Consulting, Inc. | High-value integrated circuit resistor |
| CN110824137A (zh) * | 2019-10-10 | 2020-02-21 | 中国建筑材料科学研究总院有限公司 | 低辐射玻璃中银膜在衬底上结晶有序性的预测方法及装置 |
| CN110824137B (zh) * | 2019-10-10 | 2022-03-11 | 中国建筑材料科学研究总院有限公司 | 低辐射玻璃中银膜在衬底上结晶有序性的预测方法及装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CH566063A5 (en:Method) | 1975-08-29 |
| AT321411B (de) | 1975-03-25 |
| FR2152942B1 (en:Method) | 1976-08-13 |
| DE2146662B2 (de) | 1976-04-08 |
| FR2152942A1 (en:Method) | 1973-04-27 |
| BE788894A (fr) | 1973-01-02 |
| NL7212362A (en:Method) | 1973-03-20 |
| CA968864A (en) | 1975-06-03 |
| DE2146662A1 (de) | 1973-03-22 |
| LU66097A1 (en:Method) | 1973-01-17 |
| IT967539B (it) | 1974-03-11 |
| JPS4839180A (en:Method) | 1973-06-08 |
| SE381530B (sv) | 1975-12-08 |
| GB1387166A (en) | 1975-03-12 |
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