US3816116A - N-type photosensitive member for electrophotography - Google Patents

N-type photosensitive member for electrophotography Download PDF

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Publication number
US3816116A
US3816116A US00211274A US21127471A US3816116A US 3816116 A US3816116 A US 3816116A US 00211274 A US00211274 A US 00211274A US 21127471 A US21127471 A US 21127471A US 3816116 A US3816116 A US 3816116A
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United States
Prior art keywords
type
photosensitive member
electrophotography
alloy
tellurium
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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US00211274A
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English (en)
Inventor
N Kitajima
H Kondo
T Masaki
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
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Publication of US3816116A publication Critical patent/US3816116A/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08207—Selenium-based

Definitions

  • ABSTRACT A photosensitive layer for electrophotography is composed of Se-Te alloy containing less than 3 percent by weight of Te and the Te is in a form of seleniumtellurium bond, and the Se-Te alloy has a polarity of N-type.
  • a stable and highly sensitive photosensitive member of N-type is very useful, but a method for preparing such photosensitive member is not yet developed.
  • a photosensitive layer for electrophotography which comprises Se-Te alloy containing less than 3 percent by weight of Te, the Te being in a form of selenium-tellurium bond, and the Se-Te alloy having a polarity of N-type.
  • a photosensitive member for electrophotography comprising a base plate and a photoconductive layer overlying the base plate and composed of Se-Te alloy containing less than 3 percent by weight of Te, the Te being in a form of seleniumtellurium bond and the Se'Te alloy having a polarity of N-type, and if necessary, an insulating layer overlies the photoconductive layer.
  • a process for producing a photosensitive layer for electrophotography which comprises producing a selenium-tellurium alloy containing less than 3 percent by weight of tellurium, containing Se-Te bond and showing N-type polarity by depositing selenium and tellurium on a substrate maintained at a temperature of 60-70C.
  • FIG. 1 is a graph showing decay curves for a photosensitive member of the present invention.
  • an Se-Te alloy photosensitive member of N-type is obtained by adjusting the contents of'Te to less than 3 percent by weight.
  • the tellurium contents in an Se-Te alloy affects the polarity (i.e., N-type or P-type) as shown below.
  • N-type or P-type polarity
  • the photosensitive layer is produced by depositing selenium and tellurium on a substrate maintained at a temperature of 6070C to form a selenium-tellurium alloy containing less than 3 percent by weight of tellurium, containing Se-Te bond and showing N-type polarity.
  • a temperature of 6070C When the temperature is higher than C, there occurs crystallization, and when the temperature is lower than 60C, the resulting Se-Te alloy layer shows both tendencies of N-type and P-type.
  • the tellurium should not be present as an component of a simple mixture of Se and Te, but in a form of Se-Te bond in an Se-Te alloy.
  • the Se-Te alloy shows P-type tendency under the same conditions regardless of the state of materials used for deposition:
  • Te is deposited after Se is deposited
  • 39.8g. of commercially available selenium is deposited while keeping the substrate temperature at 66-68C and then 0.2g. of commercially available tellurium is deposited thereon, or a mixture of 39.9g. of selenium and 0. lg. of tellurium is deposited in a way similar to above, the resulting plate shows low resistance and cannot be used for electrophotography.
  • the Te should not be in a form of a simple mixture of Te and Se, but in a' form of Se-Te bond.
  • uniform concentration of Te is to be maintained in a process of production of the Se-Te alloy to give Se-Te bond.
  • the resulting deposit layer was negatively charged at 1,000 V, imagewise exposed by using an original having light and dark portions at exposure amount of lux. sec. (illuminance, about 40 lux. sec.) and the surface potentials were measured.
  • the result is illustrated in F 1G. 1.
  • the curve 1 shows decay at a dark portion and the curve 2 shows decay at a light portion when the photosensitive member is positively charged.
  • the curve 3 shows decay at a dark portion and the curve 4 shows decay at a light portion when the photosensitive member is negatively charged.
  • EXAMPLE 2 That is, the photosensitive member was charged (primary charge), imagewise exposed simultaneously discharged by AC, and subjected to blanket irradiation to form electrostatic images.
  • the conditions were as shown below:

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)
US00211274A 1970-12-29 1971-12-23 N-type photosensitive member for electrophotography Expired - Lifetime US3816116A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45129134A JPS4937862B1 (enrdf_load_stackoverflow) 1970-12-29 1970-12-29

Publications (1)

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US3816116A true US3816116A (en) 1974-06-11

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US00211274A Expired - Lifetime US3816116A (en) 1970-12-29 1971-12-23 N-type photosensitive member for electrophotography

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US (1) US3816116A (enrdf_load_stackoverflow)
JP (1) JPS4937862B1 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5380873U (enrdf_load_stackoverflow) * 1976-12-07 1978-07-05

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2745327A (en) * 1952-05-12 1956-05-15 Haloid Co Electrophotographic process
US2803541A (en) * 1953-05-29 1957-08-20 Haloid Co Xerographic plate
GB1135460A (en) * 1965-11-15 1968-12-04 Rca Corp Photoconductive device and method
US3434832A (en) * 1964-10-30 1969-03-25 Xerox Corp Xerographic plate comprising a protective coating of a resin mixed with a metallic stearate
US3655377A (en) * 1966-10-03 1972-04-11 Xerox Corp Tri-layered selenium doped photoreceptor
US3723105A (en) * 1970-09-19 1973-03-27 Canon Kk Process for preparing selenium tellurium alloys

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2745327A (en) * 1952-05-12 1956-05-15 Haloid Co Electrophotographic process
US2803541A (en) * 1953-05-29 1957-08-20 Haloid Co Xerographic plate
US3434832A (en) * 1964-10-30 1969-03-25 Xerox Corp Xerographic plate comprising a protective coating of a resin mixed with a metallic stearate
GB1135460A (en) * 1965-11-15 1968-12-04 Rca Corp Photoconductive device and method
US3655377A (en) * 1966-10-03 1972-04-11 Xerox Corp Tri-layered selenium doped photoreceptor
US3723105A (en) * 1970-09-19 1973-03-27 Canon Kk Process for preparing selenium tellurium alloys

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Keck, Photoconductivity in Vacuum Coated Selenium Films, J. Optical Soc. Amer., Vol. 42, No. 4, Apr. 1952, pp. 221 225. *

Also Published As

Publication number Publication date
JPS4937862B1 (enrdf_load_stackoverflow) 1974-10-12

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