US3767983A - Charge transfer device with improved transfer efficiency - Google Patents

Charge transfer device with improved transfer efficiency Download PDF

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US3767983A
US3767983A US00282962A US3767983DA US3767983A US 3767983 A US3767983 A US 3767983A US 00282962 A US00282962 A US 00282962A US 3767983D A US3767983D A US 3767983DA US 3767983 A US3767983 A US 3767983A
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space
zones
zone
pair
localized
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C Berglund
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AT&T Corp
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Bell Telephone Laboratories Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • H10D84/895—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices

Definitions

  • each zone is operated as a potential well, the boundary of which is defined by the PN junction which defines the zone.
  • a conceptually convenient way to think of the bucket-brigade type of charge transfer devices is as a cascade of Insulated Gate Field Effect Transistors (IG- FETS) in which each of the surface zones serves both as the drain of a particular IGFET and as the source of the IGFET next succeeding. At any given time in operation, then, a pair of successive zones may be thought of as the source and drain, respectively, of an IGFET; and the transfer electrode there-overlying may be thought of as the gate electrode of the IGFET.
  • IG- FETS Insulated Gate Field Effect Transistors
  • Sangsters approach involves the use of twice as many surface zones per bit of stored information and a 50 per cent increase in the number of conduction paths employed for causing orderly advance of information through the device. This approach is considered excessively complex for many applications and, in addition, involves a larger physical size per bit of stored information, both of which problems it is the object of this invention to alleviate.
  • the instant invention is based ,on a realization first that Sangsters additional conduction path can be obviated, provided his added transistors are designed to have a threshold voltage different from the threshold voltage of the original charge transfer transistors, and is based on the further realization that, through use of the differing threshold voltages, Sangsters added surface zones also can be eliminated.
  • a bucketbrigade structure includes first and second different threshold voltages in each transfer region between each pair of successive storage sites.
  • the transfer region additionally is characterized by a substantially abrupt transition between the first and second threshold voltages and by the fact that the threshold voltage of the trailing portion of each transfer region with respect to the direction of information advance is greater than the threshold voltage in the leading portion of the transfer region.
  • This difference in threshold voltage with a substantially abrupt transition therebetween reduces the feedback of voltage from the transferee zone (drain) to the transferor zone (source) as effectively as Sangsters two-transistor-per-bit structure without the abovedescribed undue complexity thereof.
  • FIG. 1 is a cross-sectional view taken along the information channel of a portion of a basic prior art bucketbrigade device
  • FIG. 2 is a cross-sectional view taken along the information channel of a bucket-brigade device in accordance with a first-to-be-described embodiment of this invention
  • FIG. 3 is a diagram depicting typical surface potentials in the structure of FIG. 2 with typical operating voltages applied; I
  • FIG. 4A is an expanded view of ,a particularly relevant portion of the structure of FIG. 2 7
  • FIG. 4B is a diagram depicting typical surface potentials occurring in typical operation of the structure of FIGS. 2 and 4A with an operating voltage applied;
  • FIG. 5 is a cross-sectional view taken along the information channel of a portion of a bucket-brigade device in accordance with an alternate embodiment of this invention. .i:
  • FIG. 1 there is shown a cross-sectional view taken along the information channel of a portion 1 l of a basic prior art bucket-brigade device such as disclosed, for example, in U.S..-Pat. No. 3,660,697, issued May 2, 1972, to C. N. Berglund and H. J. Boll.
  • portion 11 includes a storage medium, the bulk, 12, of which illustratively is of N-type semiconductivity, and over which there has been formed an insulating layer 13, typically silicon oxide. Over insulator 13 are disposed.
  • each electrode extends over significantly more of the zone lying thereunder to the right than the zone lying thereunder to the left. More specifically, for example, electrode M overlies a significantly greater portion of zone 19M (thereunderlying to the right) than zone 18M (thereunderlying to the left).
  • a pair of conduction paths 16 and 17 are each connected to every second electrode, i.e., conduction path 16 is connected to electrodes 14, and conduction path 17 is connected to electrodes 15.
  • twophase clock voltages V and V are applied to electrodes 14 and 15 through conduction paths 16 and 17, respectively.
  • voltages V, and V advantageously are of sufficient magnitude to maintain the semiconductive surface of portion 11 always in depletion so as to minimize the effects of surface states on the charge being transferred.
  • each pair of closest zones e.g., 18M and 19M, 19M and 18N, and 18N and 19N
  • IGFET insulated gate field effect transistor
  • This channel lengthening effect may be understood by considering that typically the voltages induced on zones 18 and 19 are of polarity sufficient to produce a reverse bias on the PN junctions associated with those zones. As a result, a depletion region extends from the zone in all directions, and, significantly, to the left in FIG. 1 into the channel region. The effect of this extension of the depletion region into the channel is an effective decrease in channel length. As is known for IG- FETS, a decrease in channel length produces a higher transconductance which, for a given applied voltage, enables easier transfer of charge carriers from the source to the drain. As the magnitude of the surface potential in the drains decreases, the depletion region decreases in width and effectively lengthens the channel, thus successively decreasing the transconductance and concomitantly making it successively more difficult for the remaining charges to transfer.
  • the operation of the structure of FIG. 1 is not directly analogous to IGFET operation inasmuch as there is no direct electrical connection to the zones, and further because it is simply more convenient for the following description, use of the IGFET terminology will at this point be discontinued and, instead, the localized zones will be termed charge storage sites and the channel regions between zones along the surface will be termed transfer regions. Additional terminology which will be useful are the terms leading and trailing with respect to the direction of advance of mobile charge carriers representing signal information. Inasmuch as such direction is established by the built-in asymmetry in the structure of FIG. 1 to be that of transferring to the right, the rightmost portions of any particular feature will be termed the leading portions and the leftmost portions will be termed the trailing portions.
  • FIG. 2 a cross-sectional view taken along the information channel of a portion 21 of a bucket-brigade device in accordance with a first embodiment of this invention.
  • portion 21 includes a semiconductive bulk portion 22 illustratively of N-type semiconductivity and including adjacent the surface thereof a plurality of P- type localized zones 28 and 29, like zones 18 and 19 in FIG. 1. Over the surface of bulk 22 and zones 28 and 29 is disposed an insulating layer 23 of nonuniform thickness; and a plurality of electrodes 24 and 25 are disposed over insulator 23. As can be seen, each electrode includes two distinct parts, the leading part being labeled with the suffix B and the trailingpart being labeled with the suffix A.
  • a plurality of electrodes 24 and 25 are disposed in one-to-one correspondence with the plurality of localized zones 28 and 29.
  • the leading portion 24MB of electrode 24 extends over a great percentage of zone 28M and also extends approximately halfway over the space between zone 28M and the P-type zone next preceding.
  • the trailing portion, labeled 24MA, of electrode 24M extends essentially only over the trailing half of the space, i.e., the transfer region, between zone 28M and the zone next preceding.
  • electrodes 25M, 24N, and 25N each include parts A and B analogous to the described parts A and B of electrode 24M.
  • FIG. 3 In operation, with two-phase clock voltages V, and V, applied to electrodes 24 and 25 through conduction paths 26 and 27, a typical surface potential configuration (in the absence of mobile charge carriers representing signal information) is depicted schematically in the diagram of FIG. 3.
  • the magnitude of surface potential in the structure of FIG. 2 is plotted as increasing in the downward direction with an arbitrary zero reference level assumed to be at the base of arrow 31.
  • the horizontal dimension of the diagram of FIG. 3 has been made to align with the horizontal dimension of the structure of FIG. 2.
  • FIGS assumes that the magnitude of voltage V; is greater than the magnitude of voltage V
  • a voltage V, applied to electrode 24M produces under portion 24MA a first surface potential S1 which is of lesser magnitude than a second surface potential S2 under the trailing portion of that part of electrode 24MB which does not overlie zone 28M, the lesser magnitude being due to the greater spacing of portion 24MA from the semiconductor surface.
  • voltages V, and V typically will be negative soas to operate in the depletion mode; and, in this case, the negatively ionized acceptors in zone 28M tend to enhance the magnitude of the surface potential there in the negative direction.
  • the surface potentials in FIG. 3 are drawn assuming that V, is sufficiently greater than V, such that the least magnitude of surface potential S4 caused by the trailing edge 25MA of electrode 25M is more attractive, i.e., of greater magnitude, than the surface potentialS2 associated with the leading portion of the transfer zone next preceding half-bit. More specifically, the surface potential caused by voltage V, applied to electrode 25M is seen to have three parts like that of the surface potential under electrode 24M, except that it is translated in a direction of increasing attractiveness for mobile carriers.
  • the surface potential, S3, of zone 28M is essentially equal to the surface potential, S4, of the trailing portion of the succeeding transfer zone, due to the copious quantity of mobile charge carriers in heavily doped zone 28M.
  • the potential diagram repeats with two electrode periodicity, e.g., from the trailing edge of electrode 24M to the trailing edge of 24N.
  • FIG. 4A an expanded view of a particularly relevant portion of the structure of FIG. 2, centered around a typical transfer region, in accordance with this invention.
  • FIG. 4B is a diagram aligned with FIG. 4A and depicts typical surface potentials, S, occurring in typical operation of the structure of FIGS. 2 and 4A.
  • FIG. 4A is but an expanded view of that portion of FIG. 2 which includes the rightmost portion of zone 28M, the transfer region between zones 28M and 29M, the leftmost portion of zone 29M, and the insulator and electrode structure thereoverlying.
  • the transfer region between zones 28M and 29M includes two parts, labeled respectively Tl and T2.
  • T1 is that part, advantageously approximately half, of the transfer zone closest zone 28M and underlying the leftmost portion of electrode 25M that portion labeled 25MA.
  • portion 25MA is disposed at a greater distance, i.e., over a greater insulator thickness, than is portion 25MB which overlies the other half, T2, of the transfer zone.
  • the magnitude of the difference between potentials S4 and S5 in accordance with this invention also is of importance, but also is not amenable to precise quantification. However, it is believed this difference should be at least kT, which is about 26 X 10 volts at 300 Centigrade, and should be no greater than the magnitude of the difference between surface potentials S3 and S6 caused by applied voltages V, and V which latter difference typically will be of the order of 10 volts. In practice, it is believed a practical difference between surface potentials S4 and S5 is about 1 or 2 volts, which difference can be readily achieved with conveniently fabricatable differences in oxide thickness under the portions of the electrodes.
  • the total length of the channel region i.e., the distance between zone 28M and 29M, preferably should be sufficiently great that the depletion region XB2 from zone 29M never extends completely to the right edge of depletion region XDl, even under the greatest expected applied operating voltages, for otherwise the second order effect desired from this invention will not be fully achieved.
  • the width of half-channel T1 should be sufficiently great that the left edge of depletion region XBl never extends to the zone 28M.
  • Bulk portion 22 may be doped to a concentration of 10" donors per cubic centimeter and the P- type localized zones doped to a concentration as great as conveniently achievable, typically at least 10 acceptors per cubicc centimeter.
  • Zones 28 and 29 may be 40 microns in lateral dimension along the channel, and the distance between the zones may be about 10 microns.
  • Insulator 23 may be 1,000 Angstroms of silicon oxide in the thinner portions and 3,000 Angstroms of silicon oxide in the thicker portions, i.e., under the trailing edges such as 25MA of the electrodes. With these described dimensions, the electrodes may be about 40 microns in lateral dimension along the chan nel, with 10 micron spaces therebetween for enabling facile fabrication. Such a structure may be operated with clock voltages V and V, of 10 and 20 volts, respectively.
  • FIG. 5 depicts an alternate embodiment in which the differences in threshold voltage along the channel are produced by differences in channel doping rather than differences in insulator thickness.
  • portion 31 includes a semiconductive bulk portion 32 illustratively of N-type semiconductivity and including adjacent the surface thereof a plurality of P-type localized zones 38 and 39, like zones 18, 19, 28, and 29 in the preceding figures.
  • FIG. 5 differes from FIG. 1 only in that in FIG. 5 the trailing half of each transfer region includes an N-type zone 40 or 41, more heavily doped than bulk portion 32.
  • the electrodes may be formed of contiguous segments of different metal having different work functions; or the insulator may have portions of suitably differing dielectric constants; or the electrodes may be formed of overlapping, isolated metals (or other conductive materials such as silicon) with a bias between related portions. Still other ways also are of course possible and all are considered within the scope of this invention.
  • transfer regions having greater than two threshold regions also may be employed within the scope of this invention. If three are used, the feedback effect to which this invention is directed will be reduced to a third order effect. If four are used, then reduction will be to a fourth order effect; and so on. If more than two threshold voltages are used, the preferred arrangement would be with successively decreasing threshold voltages in the direction of advance of information; and, of course, there should be an abrupt transition between successive ones of the plurality. However, increasing the number of distinct threshold regions adds to the size of the device and introduces serious fabrication problems. Accordingly, the use of only two such regions is believed the most advantageous compromise with present technology.
  • a bucket-brigade charge transfer apparatus of the type including: a storage medium having a major surface; a plurality of spaced localized zones of immobile charge disposed in a path along the surface; an insulating layer disposed over the surface and the zones; and a plurality of localized electrodes disposed over the dielectric and registered with the localized zones such that separate ones of said electrodes extend over the space between a separate pair of successive zones and over one zone of said pair more than the other zone of said pair,
  • the improvement which comprises: separate means associated with each space between a pair of successive zones for causing in said space a plurality of different distinct threshold voltages, with said threshold voltages decreasing from the trailing portion to the leading portion of said space, said means including means for causing a substantially abrupt transition between successive ones of said threshold voltages.
  • bucket-brigade charge transfer apparatus including: a storage medium having a major surface; a plurality of spaced, localized zones of immobile charge disposed in a path along the surface; an insulating layer disposed over the surface and the zones; and a plurality of localized electrodes disposed over the dielectric and registered with the localized zones such that separate ones of said electrodes extend over the space between a separate pairof successive zones and over one zone of said pair more than the other zone of said pair,
  • the improvement which comprises: means associated with each space between a pair of successive zones for causing in the trailing portion of said space a first uniform threshold voltage greater than a second uniform threshold voltage in the leading portion of said space and for further causing a substantially abrupt transition between the two regions of differing threshold voltages.
  • Apparatus as recited in claim 3 wherein the means for causing the differing threshold voltages includes in the trailing portion of said space a thicker insulating portion than is disposed over the leading portion of said space.
  • Apparatus as recited in claim 3 wherein the means for causing the differing threshold voltages includes in the trailing portion of said space a greater concentration of dopant impurities in the storage medium than are disposed in the leading portion of said space.
  • Apparatus as recited in claim 3 including means for applying to the plurality of localized electrodes twophase voltages of magnitude and polarity sufficient for causing advance of information but insufficient for causing a depletion region to extend from a localized zone halfway across the space between said zone and the zone next preceding.
  • Apparatus as recited in claim 6 wherein the means for applying said voltages includes a pair of conduction paths, every second electrode being connected to a common one of said conduction paths and the remaining electrodes being connected in common to the other of said pair of conduction paths.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Solid State Image Pick-Up Elements (AREA)
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US00282962A 1972-08-23 1972-08-23 Charge transfer device with improved transfer efficiency Expired - Lifetime US3767983A (en)

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CA (1) CA968885A (en。)
FR (1) FR2197207B1 (en。)
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Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3927418A (en) * 1971-12-11 1975-12-16 Sony Corp Charge transfer device
US3947863A (en) * 1973-06-29 1976-03-30 Motorola Inc. Charge coupled device with electrically settable shift direction
US4012759A (en) * 1973-03-19 1977-03-15 U.S. Philips Corporation Bulk channel charge transfer device
US4100513A (en) * 1975-09-18 1978-07-11 Reticon Corporation Semiconductor filtering apparatus
US4142199A (en) * 1977-06-24 1979-02-27 International Business Machines Corporation Bucket brigade device and process
US4171229A (en) * 1977-06-24 1979-10-16 International Business Machines Corporation Improved process to form bucket brigade device
US4358890A (en) * 1978-08-31 1982-11-16 Ibm Corporation Process for making a dual implanted drain extension for bucket brigade device tetrode structure
US4379306A (en) * 1977-08-26 1983-04-05 Texas Instruments Incorporated Non-coplanar barrier-type charge coupled device with enhanced storage capacity and reduced leakage current
US4511911A (en) * 1981-07-22 1985-04-16 International Business Machines Corporation Dense dynamic memory cell structure and process
US4709380A (en) * 1982-03-09 1987-11-24 Matsushita Electronics Corporation Bucket brigade charge transfer device with auxiliary gate electrode
US4794433A (en) * 1981-10-01 1988-12-27 Kabushiki Kaisha Daini Seikosha Non-volatile semiconductor memory with non-uniform gate insulator
US4910569A (en) * 1988-08-29 1990-03-20 Eastman Kodak Company Charge-coupled device having improved transfer efficiency
US4992842A (en) * 1988-07-07 1991-02-12 Tektronix, Inc. Charge-coupled device channel with countinously graded built-in potential
US5065203A (en) * 1988-07-07 1991-11-12 Tektronix, Inc. Trench structured charge-coupled device
US5168075A (en) * 1976-09-13 1992-12-01 Texas Instruments Incorporated Random access memory cell with implanted capacitor region
US5434438A (en) * 1976-09-13 1995-07-18 Texas Instruments Inc. Random access memory cell with a capacitor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534493A (en) * 1978-08-31 1980-03-11 Ibm Bucket brigade cell

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3651349A (en) * 1970-02-16 1972-03-21 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US3697786A (en) * 1971-03-29 1972-10-10 Bell Telephone Labor Inc Capacitively driven charge transfer devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3651349A (en) * 1970-02-16 1972-03-21 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US3697786A (en) * 1971-03-29 1972-10-10 Bell Telephone Labor Inc Capacitively driven charge transfer devices

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3927418A (en) * 1971-12-11 1975-12-16 Sony Corp Charge transfer device
US4012759A (en) * 1973-03-19 1977-03-15 U.S. Philips Corporation Bulk channel charge transfer device
US3947863A (en) * 1973-06-29 1976-03-30 Motorola Inc. Charge coupled device with electrically settable shift direction
US4100513A (en) * 1975-09-18 1978-07-11 Reticon Corporation Semiconductor filtering apparatus
US4157558A (en) * 1975-09-18 1979-06-05 Reticon Corporation Bucket-brigade charge transfer means for filters and other applications
US5168075A (en) * 1976-09-13 1992-12-01 Texas Instruments Incorporated Random access memory cell with implanted capacitor region
US5434438A (en) * 1976-09-13 1995-07-18 Texas Instruments Inc. Random access memory cell with a capacitor
US4142199A (en) * 1977-06-24 1979-02-27 International Business Machines Corporation Bucket brigade device and process
US4171229A (en) * 1977-06-24 1979-10-16 International Business Machines Corporation Improved process to form bucket brigade device
US4379306A (en) * 1977-08-26 1983-04-05 Texas Instruments Incorporated Non-coplanar barrier-type charge coupled device with enhanced storage capacity and reduced leakage current
US4358890A (en) * 1978-08-31 1982-11-16 Ibm Corporation Process for making a dual implanted drain extension for bucket brigade device tetrode structure
US4511911A (en) * 1981-07-22 1985-04-16 International Business Machines Corporation Dense dynamic memory cell structure and process
US4794433A (en) * 1981-10-01 1988-12-27 Kabushiki Kaisha Daini Seikosha Non-volatile semiconductor memory with non-uniform gate insulator
US4709380A (en) * 1982-03-09 1987-11-24 Matsushita Electronics Corporation Bucket brigade charge transfer device with auxiliary gate electrode
US4992842A (en) * 1988-07-07 1991-02-12 Tektronix, Inc. Charge-coupled device channel with countinously graded built-in potential
US5065203A (en) * 1988-07-07 1991-11-12 Tektronix, Inc. Trench structured charge-coupled device
US4910569A (en) * 1988-08-29 1990-03-20 Eastman Kodak Company Charge-coupled device having improved transfer efficiency

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SE390355B (sv) 1976-12-13
JPS5232957B2 (en。) 1977-08-25
IT998395B (it) 1976-01-20
DE2341855B2 (de) 1976-05-13
JPS4960686A (en。) 1974-06-12
BE803789A (fr) 1973-12-17
CA968885A (en) 1975-06-03
NL7311381A (en。) 1974-02-26
DE2341855A1 (de) 1974-05-22
FR2197207B1 (en。) 1976-05-07
GB1415944A (en) 1975-12-03
FR2197207A1 (en。) 1974-03-22

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