JPS4960686A - - Google Patents
Info
- Publication number
- JPS4960686A JPS4960686A JP48093403A JP9340373A JPS4960686A JP S4960686 A JPS4960686 A JP S4960686A JP 48093403 A JP48093403 A JP 48093403A JP 9340373 A JP9340373 A JP 9340373A JP S4960686 A JPS4960686 A JP S4960686A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
- G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
- H10D84/895—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28296272A | 1972-08-23 | 1972-08-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4960686A true JPS4960686A (en。) | 1974-06-12 |
| JPS5232957B2 JPS5232957B2 (en。) | 1977-08-25 |
Family
ID=23083881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP48093403A Expired JPS5232957B2 (en。) | 1972-08-23 | 1973-08-22 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3767983A (en。) |
| JP (1) | JPS5232957B2 (en。) |
| BE (1) | BE803789A (en。) |
| CA (1) | CA968885A (en。) |
| FR (1) | FR2197207B1 (en。) |
| GB (1) | GB1415944A (en。) |
| IT (1) | IT998395B (en。) |
| NL (1) | NL7311381A (en。) |
| SE (1) | SE390355B (en。) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3927418A (en) * | 1971-12-11 | 1975-12-16 | Sony Corp | Charge transfer device |
| NL181766C (nl) * | 1973-03-19 | 1987-10-16 | Philips Nv | Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen. |
| US3947863A (en) * | 1973-06-29 | 1976-03-30 | Motorola Inc. | Charge coupled device with electrically settable shift direction |
| US4100513A (en) * | 1975-09-18 | 1978-07-11 | Reticon Corporation | Semiconductor filtering apparatus |
| US5168075A (en) * | 1976-09-13 | 1992-12-01 | Texas Instruments Incorporated | Random access memory cell with implanted capacitor region |
| US5434438A (en) * | 1976-09-13 | 1995-07-18 | Texas Instruments Inc. | Random access memory cell with a capacitor |
| US4142199A (en) * | 1977-06-24 | 1979-02-27 | International Business Machines Corporation | Bucket brigade device and process |
| US4171229A (en) * | 1977-06-24 | 1979-10-16 | International Business Machines Corporation | Improved process to form bucket brigade device |
| US4379306A (en) * | 1977-08-26 | 1983-04-05 | Texas Instruments Incorporated | Non-coplanar barrier-type charge coupled device with enhanced storage capacity and reduced leakage current |
| JPS5534493A (en) * | 1978-08-31 | 1980-03-11 | Ibm | Bucket brigade cell |
| US4358890A (en) * | 1978-08-31 | 1982-11-16 | Ibm Corporation | Process for making a dual implanted drain extension for bucket brigade device tetrode structure |
| US4511911A (en) * | 1981-07-22 | 1985-04-16 | International Business Machines Corporation | Dense dynamic memory cell structure and process |
| JPS5857750A (ja) * | 1981-10-01 | 1983-04-06 | Seiko Instr & Electronics Ltd | 不揮発性半導体メモリ |
| JPS58154269A (ja) * | 1982-03-09 | 1983-09-13 | Matsushita Electronics Corp | 電荷転送装置 |
| US4992842A (en) * | 1988-07-07 | 1991-02-12 | Tektronix, Inc. | Charge-coupled device channel with countinously graded built-in potential |
| US5065203A (en) * | 1988-07-07 | 1991-11-12 | Tektronix, Inc. | Trench structured charge-coupled device |
| US4910569A (en) * | 1988-08-29 | 1990-03-20 | Eastman Kodak Company | Charge-coupled device having improved transfer efficiency |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3651349A (en) * | 1970-02-16 | 1972-03-21 | Bell Telephone Labor Inc | Monolithic semiconductor apparatus adapted for sequential charge transfer |
| US3697786A (en) * | 1971-03-29 | 1972-10-10 | Bell Telephone Labor Inc | Capacitively driven charge transfer devices |
-
1972
- 1972-08-23 US US00282962A patent/US3767983A/en not_active Expired - Lifetime
-
1973
- 1973-03-01 CA CA164,992A patent/CA968885A/en not_active Expired
- 1973-08-10 SE SE7310992A patent/SE390355B/xx unknown
- 1973-08-17 NL NL7311381A patent/NL7311381A/xx not_active Application Discontinuation
- 1973-08-20 BE BE134737A patent/BE803789A/xx unknown
- 1973-08-20 FR FR7330150A patent/FR2197207B1/fr not_active Expired
- 1973-08-20 IT IT28021/73A patent/IT998395B/it active
- 1973-08-21 GB GB3947473A patent/GB1415944A/en not_active Expired
- 1973-08-22 JP JP48093403A patent/JPS5232957B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| IT998395B (it) | 1976-01-20 |
| SE390355B (sv) | 1976-12-13 |
| BE803789A (fr) | 1973-12-17 |
| DE2341855B2 (de) | 1976-05-13 |
| US3767983A (en) | 1973-10-23 |
| DE2341855A1 (de) | 1974-05-22 |
| FR2197207A1 (en。) | 1974-03-22 |
| FR2197207B1 (en。) | 1976-05-07 |
| GB1415944A (en) | 1975-12-03 |
| NL7311381A (en。) | 1974-02-26 |
| JPS5232957B2 (en。) | 1977-08-25 |
| CA968885A (en) | 1975-06-03 |