US3764424A - Fabrication of gallium arsenide devices - Google Patents

Fabrication of gallium arsenide devices Download PDF

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Publication number
US3764424A
US3764424A US00139773A US3764424DA US3764424A US 3764424 A US3764424 A US 3764424A US 00139773 A US00139773 A US 00139773A US 3764424D A US3764424D A US 3764424DA US 3764424 A US3764424 A US 3764424A
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Prior art keywords
polishing
gallium arsenide
fabrication
devices
peroxide
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US00139773A
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English (en)
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A Sayko
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AT&T Corp
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Bell Telephone Laboratories Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10P52/402—

Definitions

  • the invention relates to a process for the fabrication of gallium arsenide devices.
  • it relates to polishing surfaces of gallium arsenide including the 111) Ga-rich face.
  • gallium arsenide devices has led to the requirement, at least in some instances, of polished surfaces of higher and higher quality.
  • the polishing process using the bromine-methanol solution continues to be used satisfactorily even in these instances, although in the case of polishing the (111) Ga-rich surface of gallium arsenide polished surfaces of high quality sometimes requires the use of more dilute bromine-methanol solution. This leads to increased polishing time.
  • the invention is a process for the fabrication of gallium arsenide devices in which pH adjusted peroxide solution is used as a chemical polishing agent for polishing Ga-rich (111) surface and other surfaces of gallium arsenide.
  • This chemical polishing agent yields surfaces of high optical quality including the (111) Ga-rich surface of surfaces is often required.
  • relatively crude devices typically adjusted with ammonium hydroxide, but other alkaline substances as, for example, sodium hydroxide and potassium hydroxide, have been used.
  • the pH of the peroxide solution is between 5 and 10. A pH between 6 and 8 is preferred.
  • the polishing agent is also used in devices containing substituted gallium arsenide such as gallium aluminum arsenide. This process is used to fabricate a. variety of gallium arsenide devices including junction lasers.
  • the invention is a process for the fabrication of gallium arsenide devices. This process involves the use of peroxide solutions for the preparation of gallium arsenide surfaces. The pH of the peroxide may be adjusted by the addition of a suitable agent. Particular importance is placed on obtaining good optical polishes on the 111) Ga-rich surface of gallium arsenide, although other surfaces of this crystal may also be involved in the preparation. This surface preparation may involve uniform removal of material as in optical polishing or preparation of the surface for epitaxial crystal growth.
  • Polishing agents had the following compositions.
  • the peroxide solution contained 1 ml. ammonium hydroxide and 700 ml. of 30 percent peroxide.
  • the bromide-methanol solution was made up of 1 ml. bromine and 2,000 ml. methanol.
  • the polishing solutions were applied at rates of 800-1400 ml. per hr. Polishing was usually continued until about 500 microns of material had been removed.
  • Polishing experiments were carried out on the (111) Ga-rich and m As-rich faces of gallium arsenide.
  • the pH adjusted peroxide solutions yielded surfaces with good optical polish on all faces.
  • the polishing rate for the peroxide solution was initially about 24 microns per hour but decreased to about 17 microns per hour after about an hour and thereafter remained approximately constant.
  • the bromine-methanol solution yielded surfaces of good optical quality on the (100) and (TE) As-rich faces of gallium arsenide. Good results were also obtained on the (111) Ga-rich surface using a more dilute bromine-methanol solution.
  • the pH adjusted peroxide solutions yielded surfaces with good optical polish on all faces.
  • the polishing rate for the peroxide solution was initially about 24 microns per hour but decreased to about 17 microns per hour after about an hour and thereafter remained approximately constant.
  • the bromine-methanol solution yielded surfaces of good optical quality on the (100) and (TE) As-rich faces of gallium ar
  • polishing rate was slower and a longer time was required to polish the surface.
  • the polishing agent has a peroxide concentration between 3 and 50 percent by weight. Polishing solutions with peroxide concentrations below 3 percent exhibit an inconveniently slow polishing rate. Above 50 percent by weight the solutions become difficult to handle because of instability. The preferred concentration of 25-35 percent by Weight arises largely as a matter of convenience. This composition is readily available and easily handled.
  • the pH of the solution should be between 5 and 10. Outside this range surfaces of high optical quality are no longer obtained. A pH from 6 to 8 is preferred as yielding the best results.
  • the pH is adjusted by any convenient alkaline agent. Ammonia is particularly convenient because it can be obtained in relatively pure form and does not leave a residue on evaporation. However, other alkaline agents such as, for example, KOH or NaOH, may be used.
  • FIG. 1 shows a typical device produced by the inventive process.
  • the fabrication of the laser structure 30 begins with a piece of n-type gallium arsenide. Top 31 and bottom 32 faces are polished using the buffered peroxide polishing agent. A metal electrode 33 is then put on one face so as to form an ohmic electrical contact. Zinc or other suitable metal is then diffused into the other face 31 so as to form a p-junction 34. An oxide layer 35 of prescribed geometry is then put down on the p-junction 34 and a metal electrode 36 put down on top of this layer.
  • FIG. 2 shows a type of semiconductor device 40 which requires precise polishing techniques for fabrication.
  • fabrication is begun with a piece of n-type gallium arsenide.
  • One of the surfaces is polished using the inventive process.
  • Zinc or other suitable metal is then diffused into this surface 41.
  • This produces a thin layer of p-type gallium arsenide with a thickness of approximately 2 microns.
  • p-type aluminum substituted gallium arsenide is deposited on the surface of the p-type gallium arsenide to form a heterojunction and this surface 42 is polished fiat using the inventive progress.
  • large amounts of the n-type gallium arsenide must be removed so that only a thin layer 43 of n-type material remains.
  • this structure is used as an electroluminescent diode.
  • FIG. 3 is a side view of a gallium arsenide mircowave diode 50 made by the inventive process.
  • a typical diode consists of an outer epitaxial layer 51 with an electron concentration of 6 10 cmr' and 8 micron thick inner buffer layer 52, with an electron density of 5 X cm.-
  • a platinum 53 and gold 54 layer are attached to the epitaxial layer 51.
  • a gold-plated back contact 55 is attached to the top of the diode. The inventive proces s'is involved in the attachment of all of these layers.
  • a process for the fabrication of a gallium arsenide device comprising the preparation of gallium arsenide surfaces including the (111) Ga-rich surface comprising the steps of:
  • the aqueous solution consists essentially of between 3 and 50 percent by weight hydrogen peroxide and the pH of the aqueous solution is between 5 and 10.

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  • Mechanical Treatment Of Semiconductor (AREA)
US00139773A 1971-05-03 1971-05-03 Fabrication of gallium arsenide devices Expired - Lifetime US3764424A (en)

Applications Claiming Priority (1)

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US13977371A 1971-05-03 1971-05-03

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US (1) US3764424A (enExample)
BE (1) BE782809A (enExample)
CA (1) CA940805A (enExample)
DE (1) DE2220963A1 (enExample)
FR (1) FR2139850B1 (enExample)
IT (1) IT957703B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3972770A (en) * 1973-07-23 1976-08-03 International Telephone And Telegraph Corporation Method of preparation of electron emissive materials
US4108716A (en) * 1976-12-22 1978-08-22 Bell Telephone Laboratories, Incorporated Polishing of CdS crystals
US4980750A (en) * 1987-12-29 1990-12-25 Nec Corporation Semiconductor crystal
US20040018728A1 (en) * 2002-06-19 2004-01-29 Lee Woo Jin Chemical mechanical polishing solution for platinum

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3972770A (en) * 1973-07-23 1976-08-03 International Telephone And Telegraph Corporation Method of preparation of electron emissive materials
US4108716A (en) * 1976-12-22 1978-08-22 Bell Telephone Laboratories, Incorporated Polishing of CdS crystals
US4980750A (en) * 1987-12-29 1990-12-25 Nec Corporation Semiconductor crystal
US20040018728A1 (en) * 2002-06-19 2004-01-29 Lee Woo Jin Chemical mechanical polishing solution for platinum
US20060264052A1 (en) * 2002-06-19 2006-11-23 Hynix Semiconductor Inc. Method of forming a platinum pattern
US7470623B2 (en) 2002-06-19 2008-12-30 Hynix Semiconductor Inc. Method of forming a platinum pattern

Also Published As

Publication number Publication date
FR2139850B1 (enExample) 1974-09-27
FR2139850A1 (enExample) 1973-01-12
IT957703B (it) 1973-10-20
CA940805A (en) 1974-01-29
BE782809A (fr) 1972-08-16
DE2220963A1 (de) 1972-12-07

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