US3743923A - Reference voltage generator and regulator - Google Patents

Reference voltage generator and regulator Download PDF

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Publication number
US3743923A
US3743923A US00204224A US3743923DA US3743923A US 3743923 A US3743923 A US 3743923A US 00204224 A US00204224 A US 00204224A US 3743923D A US3743923D A US 3743923DA US 3743923 A US3743923 A US 3743923A
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Prior art keywords
semiconductor
transistor
conduction
conduction path
terminal
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US00204224A
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English (en)
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G Steudel
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RCA Corp
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RCA Corp
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/18—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes
    • G05F3/185—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes and field-effect transistors

Definitions

  • a voltage generator and regulator circuit wherein a first portion of the circuit operates uponstandard supply voltages to produce or generate a reference voltage which is substantially independent of variations in supply voltage or temperature.
  • the output voltage from the voltage generator is supplied to a regulator circuit which produces an output voltage which is regulated as a function of the reference voltage.
  • the output from the regulator circuit is a regulated voltage which is controlled by a relatively accurate reference voltage.
  • FIG. is a schematic diagram of one embodiment of the instant invention.
  • DESCRIPTION OF THE PREFERRED EMBODIMENT is negative relative to the'source electrode. Conversely, N-type MOS devices are rendered conductive when the gate electrode is positive relative to the source electrode.
  • In the reference voltage generator the input voltages are suppied at terminals 10 and 11, respectively.
  • Input terminal 10 may represent ground potential or any suitable reference source (V while terminal 11 is connected to source V the voltage to be regulated by circuit 51.
  • the voltage V is positive relative to V
  • a P-type semiconductor device P1 has the source electrode (S) and the substrate thereof connected to' terminal 10.
  • the drain electrode (D) of device P1 is con-' nected to the cathode of Zener diode Z2.
  • the anode of Zener diode Z2 is connected to terminal 11 along with the gate electrode (G) of P-type semiconductor device P2.
  • the drain electrode (D) of device P2 is connected to the cathode of Zener diode Z2.
  • the source electrode (S) and substrate of device P2 are connected to terminal 10.
  • the cathode of Zener diode Z2 is also connected to the gate electrode (G) of N-type semiconductor device N1.
  • the source electrode (S) and substrate of device N1 are connected to terminal 11.
  • the drain electrode (D) of device N1 is connected to the anode of Zener diode Z1.
  • the cathode of Zener diode Z1 is connected to terminal 10.
  • the anode of Zener diode Z1 is also connected to the gate electrode of device P1 and to the regulator circuit portion along line 13.
  • the cathode of Zener diode Z2 is connected to the regulator circuit portion along line 12.
  • the source electrode (S) and the substrate of semiconductor device P3 are connected to source V,,,, at terminal 10.
  • the gate electrode (G) of device P3 and the gate electrode (G) of device P4- are connected to the reference input source supplied at line 13 from voltage generator 50.
  • the drain electrode (D) of device P3 is connected to the source electrodes of devices P4 and P5.
  • the drain electrode (D) of device P5 is connected to terminal 11 and source V
  • the drain electrode (D) of device P4 is connected to the drain electrode (D) of device N2.
  • the source electrode (S) and the substrate of device N2 are each connected to terminal 11.
  • the gate electrode (G) of device N2 is connected to line 12 which, in this embodiment, is a source of a constant voltage, relative to source V supplied by voltage generator 50.
  • line 12 may be connected to source V at terminal 10. In the alternative embodiment, some control over the impedance of device N2 and, thus over the circuit, may be lost in the case of widely fluctuating V,,,,.
  • the drain electrode of device P5 is also connected to terminal 1 1 along with the source electrode (S) and the substrate of device N3.
  • the drain electrode (D) of device N3 and the gate electrode (G) of device P5 are connected to output terminal 14 at which a voltage V is regulated by the circuit 51.
  • the gate electrode (G) of device N3 is connected to the common junction of the drain electrodes of devices P4 and N2.
  • the sub strates of devices P4 and P5 are also connected to V
  • device P3 is of medium impedance (i.e., higher than P4, P5 and N3 but lower than N2) and is normally turned on whereby there is a substantially constant source-drain current therethrough.
  • device N3 is the regulating device in the circuit and is of relatively low impedance (i.e., of approximately the same impedance as devices P4 and P5). With the circuit configuration shown, the drain-source voltage of device N2 is the gate-source voltage of device N3.
  • an essentially constant voltage is supplied to the gate electrode of device N1 by Zener diode Z2. Consequently, when saturation of N1 is reached, device N1 operates as a constant current source and supplies current to Zener diode Z1. Conversely, the current through Zener diode Z2 is supplied by device P1 which also operates as a constant current source after saturation is achieved. That is, an essentially constant voltage is applied to the gate of device P1 by Zener diode Z1, which voltage biases device P1 in saturation. Thus, the current through Zener diode Z2 is supplied by device P1 while the current through Zener diode Z1 is supplied by device N1.
  • the circuit comprising devices N1 and P1 and Zener diodes Z1and Z2 tends to operate as a flip-flop. That is, once the circuit achieves the steady state condition, it latches in this condition and substantially constant voltages relative to V and V are applied at lines 12 and 13. These voltages are defined as a function of the Zener voltage drop across Zener diodes Z1 and Z2. This type of operation results when the currents supplied to Zener diodes Z1 and Z2 by devices N1 and P1, respectively, are of sufficient magnitude to bias the diodes Z1 and Z2 at points in the constant or Zener voltage portions of their I-V operating characteristics. It is possible for the circuit to latch in the inoperative condition if insufficient current is supplied to the Zener diodes by the devices P1 and N1. This condition will produce insufficient voltage drops across the Zener diodes whereby devices P1 and N1 will remain nonconductive.
  • semiconductor device P2 which is a high impedance device, is provided. Whenever a supply voltage greater than the threshold voltage of device P2 is connected between nodes and 11, semiconductor device P2 is conductive and is designed to supply sufficient current through Zener diode Z2 to poduce a voltage of at least the N-threshold across Zener diode Z2 thereby causing device N1 to be rendered conductive. Of course, when device N1 is conductive, device P1 is rendered conductive becuase the current through N1 produces a voltage drop across Z1 which is greater than the P-threshold for device P1.
  • device P1 may be eliminated whreby device P2 maintains the turn-on current for Zener diode Z2, as suggested supra.
  • the control of the voltage on line 12 is somewhat reduced.
  • the performance of both circuits is satisfactory and very similar.
  • the reference voltages produced by voltage generator 50 are supplied to regulator 51 along lines 12 and 13.
  • the voltage on line 12 is a constant control voltage which controls the impedance of device N2 which is a high impedance device relative to devices P3, P4, P5 and N3. Becuase the gate electrode is at one fixed value of potential V and the source electrode at another fixed value of potential V device N2 operates as a constant current means.
  • the voltage on line 13 is the reference voltage upon which the regulator operates to produce the regulated voltage V
  • the transistors P4, P5 receiving the current supplied by-sourcc P3 of the regulator circuit operate as a differential amplifier. They compare the voltage V on line 13 with the output voltage V at terminal 14 in the manner discussed in detail below.
  • devices P4 and P5 are both conductive wherein the current from source P3 is split between devices P4 and P5.
  • the current split is effective to'stabilize the operation of the circuit. In this condition, device N3 is just barely conductive.
  • the circuit loop includes only one inversion, i.e., if the output voltage at terminal 14 becomes more positive, the voltage at the gate electrode of device N3 becomes more positive and this causes the voltage at terminal 14 to become more negative.
  • This is the only inversion in circuit 51.
  • oscillation (or hunting) of the output voltage V is possible only for the case of extremely high impedance loads. That is, with high impedance loads, even small load currents produce large voltage swings across the load and, thus, at terminal 14. These large voltage swings can cause oscillation inasmuch as the circuit cannot follow precisely enough and limit the swing.
  • the loads for this circuit typically will not be of the magnitude to permit this type of operation.
  • P- and N-channel MOS enhancement field effect transistors on a monolithic substrate include a P+ and an N+ diffusion for the drain and source electrodes of the P and N units, respectively. If the N+ diffusion is diffused into a P+ diffusion, a PP N+ junction is obtained. This type of junction as a Zener characteristic. Moreover, the Zener voltage produced by this junction has a positive temperature coefficient. Inasmuch as semiconductor devices N1, P1 and P2 of voltage generator 50 have negative temperature coefficients, the circuit can be designed to produce a substantially temperature independent voltage source. This circuit together with regulator circuit 51 can be fabricated using the normal COS/MOS techniques whereby a sophisticated power regulator source for a logic system can be integrated on the same monolithic chip of an integrated circuit.
  • the combined circuits thus, produce a circuit which regulates a variable load at the output so that a relatively constant voltage substantially equal to a reference voltage is produced.
  • This circuit also has a very small power consumption in comparison to the maximum load.
  • source means having first and second terminals
  • first and second semiconductor devices of a first conductivity type having one end of the conduction paths thereof connected together in a common junction
  • a third semiconductor device of said first conductivity type having the conduction path thereof connected between the common junction at said first and second semiconductor devices and said first terminal of said source means,
  • a fourth semiconductor device of a second conductivity type having the conduction path connected between the conduction path of said first semiconductor device and said second terminal of said source means
  • reference source means connected to the control electrodes of said first and third semiconductor devices to establish a conduction level in saif first and third semiconductor devices
  • control source means connected to the control electrode of said fourth semiconductor device to establish a conduction level therein
  • control electrode of said fifth semiconductor device connected to the common connection of said first and fourth semiconductor device conduction paths to control the conduction of said fifth semiconductor device as a function of the voltage level at said common connection thereby to control the voltage at said output terminal
  • control electrode of said second semiconductor device connected to said output terminal to control the relative conduction of said first and second semiconductor devices as a function of the voltage level at said output terminal relative to the voltage supplied by said reference source.
  • source means having first and second terminals
  • each of said semiconductor means having a conduction path with a terminal at each end thereof and a control electrode for controlling the conduction through said conduction path, said semiconductor'means being of first or second conductivity type,
  • first Zener diode means connected in series with the conduction path of said first semiconductor means
  • third and fourth semiconductor means of said first conductivity type having one terminal of the conductioh paths thereof connected together in a common junction
  • fifth semiconductor means of said first conductivity type having the conduction path thereof connected between the common junction at said third and fourth semiconductor means and said first terminal of said source means,
  • sixth semiconductor means of said second conductivity type having the conduction path connected between the conduction path of said third semiconductor means and said second termnal of said source means,
  • control electrodes of said third and fifth semiconductor means connected to said common connection between said second semiconductor means and said second Zener diode means to establish a conduction level in said third and fifth semiconductor means
  • control electrode of sixth semiconductor means connected to said common connection between said first semiconductor means and said first Zener diode means to establish a conduction level therein
  • control electrode of said seventh semiconductor means connected to the common juncton at said third and sixth semiconductor means conduction paths to control the conduction of said seventh conductor means as a function of the voltage level at said common junction thereby to control the voltage at said output terminal
  • control electrode of said fourth semiconductor means connected to said output terminal to control the relative conduction of said third and fourth semiconductor means as a function of the voltage level at said output terminal relative to the voltage supplied to the control electrodes of said third semiconductor means;
  • a voltage regulating circuit of the type comprising first and second transistors connected in differential amplifier configuration; current source means connected to said differential pair to supply current thereto; means for providing a reference potential to the control electrode of said first transistor; means for connecting the control electrode of said second transistor in circuit with an output terminal the voltage at which is to be regulated; and a series pass transistor connected in series with said output terminal and adapted to regulate the supply of line current to said output terminal as a function of the signal applied to the control electrode of said series pass transistor, the improvement comprising:
  • a further transistor having its conduction path con nected in series circuit with the conduction path of said first transistor and connected to operate as a constant current source, the conduction path of said further transistor exhibiting a relatively high impedance to said first transistor whereby the output signal from said first transistor is applied as a control signal to the control electrode of said series pass transistor.
  • a voltage regulating circuit comprising:
  • first and second transistors having one end of each of the conduction paths thereof connected together at a common junction
  • feedback means including a third transistor having its control electrode connected in circuit with the other end of the conduction path of said first transistor and further having one end of its conduction pathconnected in circuit with the control electrode of said second transistor, the conduction path of said third transistor being connected in series with with the load for controlling the current level therethrough;
  • a voltage regulating circuit as recited in claim 8 further comprising:
  • first and second terminals adapted for connection to a source of potential, said common junction being connected in circuit with said first terminal through said relatively constant current means;
  • circuit loading means connected between said first terminal and the control electrode of said second transistor.
  • first and second field effect transistors each having a conduction path and a control electrode for controlling the current flow therethrough, and a current source coupled to said paths for supplying current in parallel to said paths;
  • current sensing means comprising a constant current element connected in series with the conduction path of the first transistor
  • a signal responsive conduction path located between said second current source and said second circuit feet transistor having a conduction path connected in series with that of the first transistor, and having a control electrode connected to a point of fixed reference potential for maintaining the impedance of said path at a given value.
US00204224A 1971-12-02 1971-12-02 Reference voltage generator and regulator Expired - Lifetime US3743923A (en)

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US20422471A 1971-12-02 1971-12-02

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US (1) US3743923A (de)
JP (1) JPS5329011B2 (de)
CA (1) CA984906A (de)
DE (1) DE2254618B2 (de)
FR (1) FR2161959B1 (de)
GB (1) GB1405497A (de)
IT (1) IT970446B (de)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3926198A (en) * 1974-06-10 1975-12-16 Arco Med Prod Co Cardiac pacer
US4061962A (en) * 1976-06-11 1977-12-06 Rca Corporation Current mirror amplifier augumentation of regulator transistor current flow
US4096430A (en) * 1977-04-04 1978-06-20 General Electric Company Metal-oxide-semiconductor voltage reference
US4158804A (en) * 1977-08-10 1979-06-19 General Electric Company MOSFET Reference voltage circuit
US4165478A (en) * 1977-09-21 1979-08-21 General Electric Company Reference voltage source with temperature-stable MOSFET amplifier
US4217535A (en) * 1976-12-25 1980-08-12 Tokyo Shibaura Electric Co., Ltd. Constant-voltage circuit with a diode and MOS transistors operating in the saturation region
US4232261A (en) * 1977-02-24 1980-11-04 Eurosil Gmbh MOS Control circuit for integrated circuits
US4266178A (en) * 1976-10-05 1981-05-05 Kabushiki Kaisha Suwa Seikosha Charge control circuit
US4267501A (en) * 1979-06-21 1981-05-12 Motorola, Inc. NMOS Voltage reference generator
US4397563A (en) * 1976-11-18 1983-08-09 Kabushiki Kaisha Suwa Seikosha Power circuit for electronic wristwatch
US4423369A (en) * 1977-01-06 1983-12-27 Motorola, Inc. Integrated voltage supply
US5079497A (en) * 1989-08-22 1992-01-07 U.S. Philips Corporation Circuit intended to supply a reference voltage
US5159260A (en) * 1978-03-08 1992-10-27 Hitachi, Ltd. Reference voltage generator device
US6630903B1 (en) * 2001-09-28 2003-10-07 Itt Manufacturing Enterprises, Inc. Programmable power regulator for medium to high power RF amplifiers with variable frequency applications
US20050037256A1 (en) * 2003-08-11 2005-02-17 Hiroshi Mukainakano Rechargeable implantable battery pack with battery management circuit
CN103631301A (zh) * 2012-08-24 2014-03-12 飞思卡尔半导体公司 带有浮动电压参考的低压降稳压器
US20210124386A1 (en) * 2019-10-24 2021-04-29 Nxp Usa, Inc. Voltage reference generation with compensation for temperature variation

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421723Y2 (de) * 1973-11-17 1979-08-01
US4010425A (en) * 1975-10-02 1977-03-01 Rca Corporation Current mirror amplifier
JPS5410772A (en) * 1977-06-27 1979-01-26 Seiko Instr & Electronics Ltd Electronic watch
JPS54129348A (en) * 1978-03-29 1979-10-06 Hitachi Ltd Constant voltage output circuit
JPS5523538A (en) * 1978-08-04 1980-02-20 Seiko Instr & Electronics Ltd Constant-voltage generator circuit
GB2034937B (en) * 1978-11-14 1983-01-06 Philips Electronic Associated Regulated power supply
FR2476411A1 (fr) * 1980-02-14 1981-08-21 Texas Instruments France Oscillateur rc integre realise en technique mos complementaire
JPS6350214Y2 (de) * 1980-07-28 1988-12-23
JPS61146474U (de) * 1985-03-04 1986-09-09
JPH0423115Y2 (de) * 1986-06-26 1992-05-28

Citations (7)

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US2963637A (en) * 1956-12-03 1960-12-06 Hughes Aircraft Co Voltage regulator
US3303413A (en) * 1963-08-15 1967-02-07 Motorola Inc Current regulator
US3317850A (en) * 1963-04-29 1967-05-02 Fairchild Camera Instr Co Temperature-stable differential amplifier using field-effect devices
US3386030A (en) * 1964-10-21 1968-05-28 Collins Radio Co Voltage regulator
US3508081A (en) * 1966-08-17 1970-04-21 Honeywell Inc Circuit arrangement for supplying a current signal to one or two loads
US3508084A (en) * 1967-10-06 1970-04-21 Texas Instruments Inc Enhancement-mode mos circuitry
US3681623A (en) * 1968-03-15 1972-08-01 Ibm Geometric current amplifier

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2963637A (en) * 1956-12-03 1960-12-06 Hughes Aircraft Co Voltage regulator
US3317850A (en) * 1963-04-29 1967-05-02 Fairchild Camera Instr Co Temperature-stable differential amplifier using field-effect devices
US3303413A (en) * 1963-08-15 1967-02-07 Motorola Inc Current regulator
US3386030A (en) * 1964-10-21 1968-05-28 Collins Radio Co Voltage regulator
US3508081A (en) * 1966-08-17 1970-04-21 Honeywell Inc Circuit arrangement for supplying a current signal to one or two loads
US3508084A (en) * 1967-10-06 1970-04-21 Texas Instruments Inc Enhancement-mode mos circuitry
US3681623A (en) * 1968-03-15 1972-08-01 Ibm Geometric current amplifier

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Title
Markus, Sourcebook of Electronic Circuits, McGraw Hill Book Co., 1968, page 171, TK7867M3. *

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3926198A (en) * 1974-06-10 1975-12-16 Arco Med Prod Co Cardiac pacer
US4061962A (en) * 1976-06-11 1977-12-06 Rca Corporation Current mirror amplifier augumentation of regulator transistor current flow
US4266178A (en) * 1976-10-05 1981-05-05 Kabushiki Kaisha Suwa Seikosha Charge control circuit
US4397563A (en) * 1976-11-18 1983-08-09 Kabushiki Kaisha Suwa Seikosha Power circuit for electronic wristwatch
US4217535A (en) * 1976-12-25 1980-08-12 Tokyo Shibaura Electric Co., Ltd. Constant-voltage circuit with a diode and MOS transistors operating in the saturation region
US4423369A (en) * 1977-01-06 1983-12-27 Motorola, Inc. Integrated voltage supply
US4232261A (en) * 1977-02-24 1980-11-04 Eurosil Gmbh MOS Control circuit for integrated circuits
US4096430A (en) * 1977-04-04 1978-06-20 General Electric Company Metal-oxide-semiconductor voltage reference
US4158804A (en) * 1977-08-10 1979-06-19 General Electric Company MOSFET Reference voltage circuit
US4165478A (en) * 1977-09-21 1979-08-21 General Electric Company Reference voltage source with temperature-stable MOSFET amplifier
US5159260A (en) * 1978-03-08 1992-10-27 Hitachi, Ltd. Reference voltage generator device
US4267501A (en) * 1979-06-21 1981-05-12 Motorola, Inc. NMOS Voltage reference generator
US5079497A (en) * 1989-08-22 1992-01-07 U.S. Philips Corporation Circuit intended to supply a reference voltage
US6630903B1 (en) * 2001-09-28 2003-10-07 Itt Manufacturing Enterprises, Inc. Programmable power regulator for medium to high power RF amplifiers with variable frequency applications
US20050037256A1 (en) * 2003-08-11 2005-02-17 Hiroshi Mukainakano Rechargeable implantable battery pack with battery management circuit
CN103631301A (zh) * 2012-08-24 2014-03-12 飞思卡尔半导体公司 带有浮动电压参考的低压降稳压器
US20210124386A1 (en) * 2019-10-24 2021-04-29 Nxp Usa, Inc. Voltage reference generation with compensation for temperature variation
US11774999B2 (en) * 2019-10-24 2023-10-03 Nxp Usa, Inc. Voltage reference generation with compensation for temperature variation

Also Published As

Publication number Publication date
GB1405497A (en) 1975-09-10
DE2254618A1 (de) 1973-06-07
CA984906A (en) 1976-03-02
FR2161959B1 (de) 1977-12-30
DE2254618B2 (de) 1976-09-16
FR2161959A1 (de) 1973-07-13
JPS4863257A (de) 1973-09-03
IT970446B (it) 1974-04-10
JPS5329011B2 (de) 1978-08-18

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