US3694972A - Method and apparatus for subdividing a crystal wafer - Google Patents
Method and apparatus for subdividing a crystal wafer Download PDFInfo
- Publication number
- US3694972A US3694972A US50181A US5018170A US3694972A US 3694972 A US3694972 A US 3694972A US 50181 A US50181 A US 50181A US 5018170 A US5018170 A US 5018170A US 3694972 A US3694972 A US 3694972A
- Authority
- US
- United States
- Prior art keywords
- wafer
- slits
- slit
- griddle
- sand
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000004576 sand Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 238000005422 blasting Methods 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 43
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 210000001520 comb Anatomy 0.000 description 7
- 230000006378 damage Effects 0.000 description 6
- 238000005488 sandblasting Methods 0.000 description 6
- 102100027340 Slit homolog 2 protein Human genes 0.000 description 3
- 101710133576 Slit homolog 2 protein Proteins 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 241000231739 Rutilus rutilus Species 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C3/00—Abrasive blasting machines or devices; Plants
- B24C3/32—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks
- B24C3/322—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks for electrical components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
Definitions
- I perform the above-described method with the aid of a device which has a griddle whose supporting surface for the crystalline wafer is provided with crosswise arrays of parallel slits, the device further comprising a group of metal combs which form a crosswise design matching that of the slitted griddle and which are stationarily fixed in a frame.
- a griddle arrangement particularly simple to manufacture is made of a metal block which has crosswise parallel incisions at the supporting surface for the crystalline wafer and whose bottom is traversed by exhaust bores communicating with the incisions.
- FIG. 2 is a perspective view of the griddle structure in apparatus according to FIG. 1.
- FIG. 4 is a vertical section through FIG. 3, the lefthand portion of FIG. 4 being sectioned along the line A-B, and the right-hand portion of FIG. 4 being sectioned along the line B-C of FIG. 2.
- FIG. 5 is a schematic and perspective view of another embodiment of a griddle applicable in apparatus otherwise corresponding to FIG. 1.
- the supporting surface 8 on top of the griddle 5 is preferably lapped to planar shape.
- Four crystal slices or wafers 9 which, for simplicity, are shown only by dotand-dash lines, are placed face-to-face on top of the griddle.
- the wafers 9 are preferably cemented by cellulose varnish to the supporting surface 8 which is only slightly roughened by the lapping treatment.
- the crystal wafers 9, for example, may consist of silicon and may have metal coatings on their main faces so as to contain a sequence of zones having alternately different conductivity types and extending parallel to the main faces. It is the purpose of the apparatus shown in FIG. 1 to separate the silicon wafers 9 into a multiplicity of small silicon components for electronic semiconductor purposes.
- a strip-shaped spacer 16 is arranged on both sides of the griddle 5. Each spacer is located between two combs IS. The spacer strips thus provide for slits 21 which are parallel to the combs and interrupt the supporting surface 8.
- the section B-C shown in FIG. 4 indicates that the interspaces between the individual teeth of the combs I5 form further slits 24 perpendicular to the combs 15.
- the sandblasting device 10 may also be provided with several jet nozzles 11' located beside one another, as shown in FIG. 6, so that simultaneously several parallel cuts can be passed through the crystal wafers 9.
- the crosswise parallel incisions 32 and 33 extend downward to approximately one-half the height of the metal block 31.
- the bottom portion of the block 31 is provided with suction bores 34 which preferably are arranged precisely beneath the intersection points of the crosswise parallel incisions 32, 33.
- the griddle according to FIGS. 5 and 6 can be fastened, in the same manner as the griddle 5 of F IG. 2, above the suction opening 3 on the support 2.
- the method of subdividing a thin semiconductive crystal wafer into individual semiconductor members by forming cuts in the wafer perpendicularly to the faces thereof which comprises cementing a face of the wafer onto a planar support formed with an array of slits extending in direction in which the cuts are to be formed in the wafer, disposing a sandblast nozzle having an elongated outlet opening, that is narrower than the width of the slits formed in the support directly above the opposite face of the wafer and in alignment with one of the slits, blasting a jet of sand having a grain size of substantially ID to 30 p.
- the slits are arranged in parallel criss-cross relationship, and which comprises disposing a plurality of the sandblast nozzles in alignment with a corresponding plurality of the slits, blasting a corresponding plurality of jets of the sand from the nozzles onto the wafer along the respective plurality of slits, and then passing the plurality of the nozzles along the respective slits to form severing cuts 5 in the wafer, and simultaneously sucking the sand accumulating in the respective slits out of the same.
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691931335 DE1931335C3 (de) | 1969-06-20 | Verfahren zum Abtrennen eines Körpers von einem scheibenförmigen Kristall und Vorrichtung zur Durchführung dieses Verfahrens |
Publications (1)
Publication Number | Publication Date |
---|---|
US3694972A true US3694972A (en) | 1972-10-03 |
Family
ID=5737534
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US50181A Expired - Lifetime US3694972A (en) | 1969-06-20 | 1970-06-26 | Method and apparatus for subdividing a crystal wafer |
Country Status (9)
Country | Link |
---|---|
US (1) | US3694972A (ja) |
JP (1) | JPS5013510B1 (ja) |
AT (1) | AT315241B (ja) |
CH (1) | CH504783A (ja) |
FR (1) | FR2046967B1 (ja) |
GB (1) | GB1259249A (ja) |
NL (1) | NL7008966A (ja) |
SE (1) | SE351523B (ja) |
ZA (1) | ZA704234B (ja) |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3778935A (en) * | 1972-01-26 | 1973-12-18 | Pennwalt Corp | Abrading apparatus with rotary index table |
US3866357A (en) * | 1974-06-06 | 1975-02-18 | Pennwalt Corp | Abrading apparatus |
US3888054A (en) * | 1973-11-16 | 1975-06-10 | Western Electric Co | Method for abrasive cutting in a liquid |
US3953941A (en) * | 1973-10-11 | 1976-05-04 | Bbc Brown Boveri & Company Limited | Method and apparatus for making a groove in a semi-conductor element |
US4047286A (en) * | 1975-05-20 | 1977-09-13 | Siemens Aktiengesellschaft | Process for the production of semiconductor elements |
US4738056A (en) * | 1984-12-28 | 1988-04-19 | Fuji Seiki Machine Works, Ltd. | Method and blasting apparatus for preparation of silicon wafer |
US5052155A (en) * | 1989-08-10 | 1991-10-01 | Emc Technology, Inc. | Apparatus for the treatment of articles by high velocity impacting thereof with a particulate abrasive material |
US5505653A (en) * | 1992-10-17 | 1996-04-09 | Saechsische Werkzeug Und Sondermaschinen Gmbh | Abrasive/water jet cutting apparatus |
US6676486B1 (en) * | 2000-10-20 | 2004-01-13 | Lightwave Microsystems Corporation | Polymeric chemical injection into a water jet to improve cut quality while cutting very brittle materials |
WO2004025724A1 (en) * | 2002-09-13 | 2004-03-25 | Towa-Intercon Technology, Inc. | Jet singulation of a substrate |
US20050126472A1 (en) * | 2002-09-13 | 2005-06-16 | Towa Intercon Technology, Inc. | Jet singulation |
US20060180579A1 (en) * | 2005-02-11 | 2006-08-17 | Towa Intercon Technology, Inc. | Multidirectional cutting chuck |
SG131836A1 (en) * | 2005-09-22 | 2007-05-28 | Towa Corp | Cutting apparatus |
US20070170597A1 (en) * | 2003-08-18 | 2007-07-26 | Markus Vos | Process for producing components |
EP1873824A1 (en) * | 2002-09-13 | 2008-01-02 | Towa-Intercon Technology, Inc. | Jet singulation of a substrate |
US20080282855A1 (en) * | 2007-05-16 | 2008-11-20 | Disco Corporation | Water jet cutting method |
US20090013839A1 (en) * | 2007-06-14 | 2009-01-15 | Disco Corporation | Water jet processing method |
US20130303053A1 (en) * | 2012-05-08 | 2013-11-14 | Fuji Manufacturing Co., Ltd | Method and device for cutting out hard-brittle substrate |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1252711A (en) * | 1984-09-27 | 1989-04-18 | Richard A. Herrington | Ultra-high pressure abrasive jet cutting of glass |
US4702042A (en) * | 1984-09-27 | 1987-10-27 | Libbey-Owens-Ford Co. | Cutting strengthened glass |
US4656791A (en) * | 1984-09-27 | 1987-04-14 | Libbey-Owens-Ford Company | Abrasive fluid jet cutting support |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US587892A (en) * | 1897-08-10 | M a t iiia s w a l t e k | ||
US1664159A (en) * | 1926-04-23 | 1928-03-27 | Elroy A Chase | Apparatus for producing ornamental background on stone |
GB794528A (en) * | 1955-10-07 | 1958-05-07 | William Howard Mead | Improvements in receivers for particulate material |
US3187412A (en) * | 1963-04-26 | 1965-06-08 | Gen Electric | Method of mounting and aligning transducers on delay lines |
US3205104A (en) * | 1961-07-10 | 1965-09-07 | Litton Industries Inc | Fabrication of interdigital delay lines |
US3262234A (en) * | 1963-10-04 | 1966-07-26 | Int Rectifier Corp | Method of forming a semiconductor rim by sandblasting |
US3453781A (en) * | 1966-03-30 | 1969-07-08 | Ibm | Tailoring microminiature components |
US3516204A (en) * | 1967-08-21 | 1970-06-23 | Pennwalt Corp | Abrading apparatus |
-
1970
- 1970-06-15 CH CH897770A patent/CH504783A/de not_active IP Right Cessation
- 1970-06-17 AT AT546470A patent/AT315241B/de not_active IP Right Cessation
- 1970-06-18 NL NL7008966A patent/NL7008966A/xx unknown
- 1970-06-19 FR FR7022770A patent/FR2046967B1/fr not_active Expired
- 1970-06-19 GB GB1259249D patent/GB1259249A/en not_active Expired
- 1970-06-20 JP JP5399070A patent/JPS5013510B1/ja active Pending
- 1970-06-22 ZA ZA704234A patent/ZA704234B/xx unknown
- 1970-06-22 SE SE08611/70A patent/SE351523B/xx unknown
- 1970-06-26 US US50181A patent/US3694972A/en not_active Expired - Lifetime
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US587892A (en) * | 1897-08-10 | M a t iiia s w a l t e k | ||
US1664159A (en) * | 1926-04-23 | 1928-03-27 | Elroy A Chase | Apparatus for producing ornamental background on stone |
GB794528A (en) * | 1955-10-07 | 1958-05-07 | William Howard Mead | Improvements in receivers for particulate material |
US3205104A (en) * | 1961-07-10 | 1965-09-07 | Litton Industries Inc | Fabrication of interdigital delay lines |
US3187412A (en) * | 1963-04-26 | 1965-06-08 | Gen Electric | Method of mounting and aligning transducers on delay lines |
US3262234A (en) * | 1963-10-04 | 1966-07-26 | Int Rectifier Corp | Method of forming a semiconductor rim by sandblasting |
US3453781A (en) * | 1966-03-30 | 1969-07-08 | Ibm | Tailoring microminiature components |
US3516204A (en) * | 1967-08-21 | 1970-06-23 | Pennwalt Corp | Abrading apparatus |
Cited By (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3778935A (en) * | 1972-01-26 | 1973-12-18 | Pennwalt Corp | Abrading apparatus with rotary index table |
US3953941A (en) * | 1973-10-11 | 1976-05-04 | Bbc Brown Boveri & Company Limited | Method and apparatus for making a groove in a semi-conductor element |
US3888054A (en) * | 1973-11-16 | 1975-06-10 | Western Electric Co | Method for abrasive cutting in a liquid |
US3866357A (en) * | 1974-06-06 | 1975-02-18 | Pennwalt Corp | Abrading apparatus |
US4047286A (en) * | 1975-05-20 | 1977-09-13 | Siemens Aktiengesellschaft | Process for the production of semiconductor elements |
US4738056A (en) * | 1984-12-28 | 1988-04-19 | Fuji Seiki Machine Works, Ltd. | Method and blasting apparatus for preparation of silicon wafer |
US5052155A (en) * | 1989-08-10 | 1991-10-01 | Emc Technology, Inc. | Apparatus for the treatment of articles by high velocity impacting thereof with a particulate abrasive material |
US5505653A (en) * | 1992-10-17 | 1996-04-09 | Saechsische Werkzeug Und Sondermaschinen Gmbh | Abrasive/water jet cutting apparatus |
US6676486B1 (en) * | 2000-10-20 | 2004-01-13 | Lightwave Microsystems Corporation | Polymeric chemical injection into a water jet to improve cut quality while cutting very brittle materials |
US6676485B1 (en) * | 2000-10-20 | 2004-01-13 | Lightwave Microsystems Corporation | Wet injecting fine abrasives for water jet curved cutting of very brittle materials |
WO2004025724A1 (en) * | 2002-09-13 | 2004-03-25 | Towa-Intercon Technology, Inc. | Jet singulation of a substrate |
US20050126472A1 (en) * | 2002-09-13 | 2005-06-16 | Towa Intercon Technology, Inc. | Jet singulation |
US20050145166A1 (en) * | 2002-09-13 | 2005-07-07 | Towa Intercon Tools, Inc. | Jet singulation |
US7059940B2 (en) | 2002-09-13 | 2006-06-13 | Towa Intercon Technology, Inc. | Jet singulation |
US20060194514A1 (en) * | 2002-09-13 | 2006-08-31 | Towa Intercon Technology, Inc., A California Corporation | Jet singulation |
US7153186B2 (en) | 2002-09-13 | 2006-12-26 | Towa Intercon Technology, Inc. | Jet singulation |
EP1873824A1 (en) * | 2002-09-13 | 2008-01-02 | Towa-Intercon Technology, Inc. | Jet singulation of a substrate |
US7357694B2 (en) | 2002-09-13 | 2008-04-15 | Towa Corporation | Jet singulation |
US7736995B2 (en) | 2003-08-18 | 2010-06-15 | Schott Ag | Process for producing components |
CN1835823B (zh) * | 2003-08-18 | 2011-02-09 | 肖特股份公司 | 制造元件的方法 |
US20070170597A1 (en) * | 2003-08-18 | 2007-07-26 | Markus Vos | Process for producing components |
US20060180579A1 (en) * | 2005-02-11 | 2006-08-17 | Towa Intercon Technology, Inc. | Multidirectional cutting chuck |
SG131836A1 (en) * | 2005-09-22 | 2007-05-28 | Towa Corp | Cutting apparatus |
US20080282855A1 (en) * | 2007-05-16 | 2008-11-20 | Disco Corporation | Water jet cutting method |
US20090013839A1 (en) * | 2007-06-14 | 2009-01-15 | Disco Corporation | Water jet processing method |
US7585201B2 (en) * | 2007-06-14 | 2009-09-08 | Disco Corporation | Water jet processing method |
US20130303053A1 (en) * | 2012-05-08 | 2013-11-14 | Fuji Manufacturing Co., Ltd | Method and device for cutting out hard-brittle substrate |
US9333624B2 (en) * | 2012-05-08 | 2016-05-10 | Fuji Manufacturing Co., Ltd | Method and device for cutting out hard-brittle substrate and protecting regions on the substrate |
US20160243673A1 (en) * | 2012-05-08 | 2016-08-25 | Fuji Manufacturing Co., Ltd | Method and device for cutting out hard-brittle substrate |
US10071462B2 (en) * | 2012-05-08 | 2018-09-11 | Fuji Manufacturing Co., Ltd. | Method and device for cutting out hard-brittle substrate |
Also Published As
Publication number | Publication date |
---|---|
ZA704234B (en) | 1971-03-31 |
DE1931335B2 (de) | 1976-03-11 |
JPS5013510B1 (ja) | 1975-05-20 |
AT315241B (de) | 1974-05-10 |
GB1259249A (ja) | 1972-01-05 |
SE351523B (ja) | 1972-11-27 |
NL7008966A (ja) | 1970-12-22 |
FR2046967B1 (ja) | 1974-09-20 |
DE1931335A1 (de) | 1970-12-23 |
CH504783A (de) | 1971-03-15 |
FR2046967A1 (ja) | 1971-03-12 |
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